WO2004077446A8 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
WO2004077446A8
WO2004077446A8 PCT/JP2003/002271 JP0302271W WO2004077446A8 WO 2004077446 A8 WO2004077446 A8 WO 2004077446A8 JP 0302271 W JP0302271 W JP 0302271W WO 2004077446 A8 WO2004077446 A8 WO 2004077446A8
Authority
WO
WIPO (PCT)
Prior art keywords
storage device
nonvolatile semiconductor
semiconductor storage
reference cells
erasing
Prior art date
Application number
PCT/JP2003/002271
Other languages
English (en)
French (fr)
Other versions
WO2004077446A1 (ja
Inventor
Atsuhiro Suzuki
Original Assignee
Fujitsu Ltd
Atsuhiro Suzuki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Atsuhiro Suzuki filed Critical Fujitsu Ltd
Priority to PCT/JP2003/002271 priority Critical patent/WO2004077446A1/ja
Priority to CN038230747A priority patent/CN1685444B/zh
Priority to JP2004568757A priority patent/JP4101809B2/ja
Publication of WO2004077446A1 publication Critical patent/WO2004077446A1/ja
Publication of WO2004077446A8 publication Critical patent/WO2004077446A8/ja
Priority to US11/087,735 priority patent/US7280404B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
PCT/JP2003/002271 2003-02-27 2003-02-27 不揮発性半導体記憶装置 WO2004077446A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2003/002271 WO2004077446A1 (ja) 2003-02-27 2003-02-27 不揮発性半導体記憶装置
CN038230747A CN1685444B (zh) 2003-02-27 2003-02-27 非易失性半导体存储装置
JP2004568757A JP4101809B2 (ja) 2003-02-27 2003-02-27 不揮発性半導体記憶装置
US11/087,735 US7280404B2 (en) 2003-02-27 2005-03-24 Nonvolatile semiconductor memory device that erases stored data after a predetermined time period without the use of a timer circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2003/002271 WO2004077446A1 (ja) 2003-02-27 2003-02-27 不揮発性半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/087,735 Continuation US7280404B2 (en) 2003-02-27 2005-03-24 Nonvolatile semiconductor memory device that erases stored data after a predetermined time period without the use of a timer circuit

Publications (2)

Publication Number Publication Date
WO2004077446A1 WO2004077446A1 (ja) 2004-09-10
WO2004077446A8 true WO2004077446A8 (ja) 2004-11-11

Family

ID=32923111

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/002271 WO2004077446A1 (ja) 2003-02-27 2003-02-27 不揮発性半導体記憶装置

Country Status (4)

Country Link
US (1) US7280404B2 (ja)
JP (1) JP4101809B2 (ja)
CN (1) CN1685444B (ja)
WO (1) WO2004077446A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8225410B2 (en) 2005-07-08 2012-07-17 At&T Intellectual Property I, L. P. Methods, systems, and devices for securing content
FR2904464A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Circuit eeprom de retention de charges pour mesure temporelle
WO2008065841A1 (fr) * 2006-11-27 2008-06-05 Panasonic Corporation Circuit à arrêt automatique utilisant comme minuteur une quantité de charge d'élément de stockage non volatile
IT1403899B1 (it) 2010-12-30 2013-11-08 Incard Sa Metodo e sistema per controllare la perdita di affidabilita' di una memoria non volatile
US9165629B2 (en) 2013-03-12 2015-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for MRAM sense reference trimming
US10907845B2 (en) 2016-04-13 2021-02-02 Trane International Inc. Multi-functional heat pump apparatus
KR20180131860A (ko) 2017-06-01 2018-12-11 에스케이하이닉스 주식회사 반도체장치 및 데이터수명코드 처리방법
CN107644666B (zh) * 2017-10-20 2020-09-18 上海华力微电子有限公司 一种自适应闪存写入操作控制方法及电路
US11407283B2 (en) 2018-04-30 2022-08-09 Tiger Tool International Incorporated Cab heating systems and methods for vehicles
TWI699773B (zh) * 2019-03-13 2020-07-21 力旺電子股份有限公司 可編程可抹除的非揮發性記憶體

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61115297A (ja) * 1984-11-12 1986-06-02 Nippon Telegr & Teleph Corp <Ntt> 記憶回路
JPS61143891A (ja) * 1984-12-17 1986-07-01 Omron Tateisi Electronics Co Ｉｃカ−ド
JP2598047B2 (ja) * 1987-11-13 1997-04-09 株式会社東芝 有効期限付きカード
JPH07244781A (ja) * 1994-03-07 1995-09-19 C S K Sogo Kenkyusho:Kk ソフトウェアレンタル方法および装置ならびに流通媒体
US5760644A (en) * 1995-10-25 1998-06-02 Nvx Corporation Integrated circuit timer function using natural decay of charge stored in a dielectric
JPH09127271A (ja) * 1995-11-01 1997-05-16 Sony Corp 時刻表示装置
US6260103B1 (en) * 1998-01-05 2001-07-10 Intel Corporation Read-while-write memory including fewer verify sense amplifiers than read sense amplifiers
US6094368A (en) * 1999-03-04 2000-07-25 Invox Technology Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories
JP4196240B2 (ja) 1999-08-31 2008-12-17 ソニー株式会社 再生制限機能付き再生装置、再生制限方法及び再生制限プログラム
JP2001117824A (ja) * 1999-10-15 2001-04-27 Casio Comput Co Ltd 携帯型情報端末装置およびそのプログラム記録媒体
US6249460B1 (en) * 2000-02-28 2001-06-19 Micron Technology, Inc. Dynamic flash memory cells with ultrathin tunnel oxides
US6856581B1 (en) * 2000-10-31 2005-02-15 International Business Machines Corporation Batteryless, oscillatorless, binary time cell usable as an horological device with associated programming methods and devices
JP2002196988A (ja) * 2000-12-27 2002-07-12 Sharp Corp 記憶媒体
JP2002288041A (ja) * 2001-03-23 2002-10-04 Sony Corp 情報処理装置および方法、プログラム格納媒体、並びにプログラム
US6799256B2 (en) * 2002-04-12 2004-09-28 Advanced Micro Devices, Inc. System and method for multi-bit flash reads using dual dynamic references
JP3929887B2 (ja) * 2002-12-25 2007-06-13 株式会社東芝 半導体集積回路、半導体集積回路モジュール、および、情報機器
JP3822170B2 (ja) * 2003-01-31 2006-09-13 株式会社東芝 Ｉｃカードの利用期間設定方法、ｉｃカード、および、ｉｃカードケース

Also Published As

Publication number Publication date
JPWO2004077446A1 (ja) 2006-06-08
CN1685444A (zh) 2005-10-19
JP4101809B2 (ja) 2008-06-18
US20060028871A1 (en) 2006-02-09
CN1685444B (zh) 2011-07-06
US7280404B2 (en) 2007-10-09
WO2004077446A1 (ja) 2004-09-10

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