WO2004077519A9 - Dielectric barrier layer films - Google Patents
Dielectric barrier layer filmsInfo
- Publication number
- WO2004077519A9 WO2004077519A9 PCT/US2004/005531 US2004005531W WO2004077519A9 WO 2004077519 A9 WO2004077519 A9 WO 2004077519A9 US 2004005531 W US2004005531 W US 2004005531W WO 2004077519 A9 WO2004077519 A9 WO 2004077519A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- layers
- barrier
- dielectric
- substrate
- Prior art date
Links
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- 239000000758 substrate Substances 0.000 claims abstract description 122
- 238000000151 deposition Methods 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 58
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 22
- 239000003989 dielectric material Substances 0.000 claims abstract description 10
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 28
- 230000007547 defect Effects 0.000 claims description 27
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- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 17
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 229920004142 LEXAN™ Polymers 0.000 description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
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- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
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- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 101150005296 FCN1 gene Proteins 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910009848 Ti4O7 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN2004800055155A CN1756856B (en) | 2003-02-27 | 2004-02-26 | Dielectric barrier layer films |
EP04715009A EP1597408B1 (en) | 2003-02-27 | 2004-02-26 | Method for forming dielectric barrier layers |
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WO2004077519A3 WO2004077519A3 (en) | 2005-01-06 |
WO2004077519A9 true WO2004077519A9 (en) | 2005-11-03 |
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PCT/US2004/005531 WO2004077519A2 (en) | 2003-02-27 | 2004-02-26 | Dielectric barrier layer films |
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US (2) | US7205662B2 (en) |
EP (1) | EP1597408B1 (en) |
KR (1) | KR100691168B1 (en) |
CN (1) | CN1756856B (en) |
WO (1) | WO2004077519A2 (en) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8159134B2 (en) * | 2007-05-16 | 2012-04-17 | The Board Of Trustees Of The University Of Illinois | Arrays of microcavity plasma devices and electrodes with reduced mechanical stress |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
EP2229706B1 (en) | 2008-01-11 | 2014-12-24 | Infinite Power Solutions, Inc. | Thin film encapsulation for thin film batteries and other devices |
JP5595377B2 (en) * | 2008-04-02 | 2014-09-24 | インフィニット パワー ソリューションズ, インコーポレイテッド | Control and protection of passive over and under voltage for energy storage devices associated with energy intake |
KR100953658B1 (en) | 2008-06-05 | 2010-04-20 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display device |
JP2012500610A (en) | 2008-08-11 | 2012-01-05 | インフィニット パワー ソリューションズ, インコーポレイテッド | Energy device with integrated collector surface and method for electromagnetic energy acquisition |
KR101613671B1 (en) * | 2008-09-12 | 2016-04-19 | 사푸라스트 리써치 엘엘씨 | Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof |
US8508193B2 (en) * | 2008-10-08 | 2013-08-13 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
US20100143710A1 (en) * | 2008-12-05 | 2010-06-10 | Lotus Applied Technology, Llc | High rate deposition of thin films with improved barrier layer properties |
WO2010135559A1 (en) * | 2009-05-20 | 2010-11-25 | Infinite Power Solutions, Inc. | Method of integrating electrochemical devices into and onto fixtures |
US7951708B2 (en) * | 2009-06-03 | 2011-05-31 | International Business Machines Corporation | Copper interconnect structure with amorphous tantalum iridium diffusion barrier |
GB0909721D0 (en) * | 2009-06-05 | 2009-07-22 | Plastic Logic Ltd | Dielectric seed layer |
GB2473655A (en) * | 2009-09-21 | 2011-03-23 | Mantis Deposition Ltd | Magnetron sputtering techiques and apparatus |
KR101065318B1 (en) * | 2009-12-03 | 2011-09-16 | 삼성모바일디스플레이주식회사 | Method of manufacturing flexible display apparatus |
KR101135539B1 (en) * | 2010-03-05 | 2012-04-13 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display |
CN102947976B (en) | 2010-06-07 | 2018-03-16 | 萨普拉斯特研究有限责任公司 | Chargeable, highdensity electrochemical apparatus |
CN105210175A (en) | 2012-11-12 | 2015-12-30 | 德玛雷有限责任公司 | Adiabatic planar waveguide coupler transformer |
TWI514628B (en) * | 2013-10-24 | 2015-12-21 | Lextar Electronics Corp | Electrode structure and light emitting diode structure having the same |
US10147906B2 (en) * | 2014-02-06 | 2018-12-04 | Emagin Corporation | High efficacy seal for organic light emitting diode displays |
NZ725495A (en) * | 2014-04-02 | 2020-05-29 | Franck Natali | Doped rare earth nitride materials and devices comprising same |
WO2017196892A1 (en) | 2016-05-09 | 2017-11-16 | Demaray, Llc | Thin film battery with high capacity, energy density and cycle life |
JP6322669B2 (en) * | 2016-06-23 | 2018-05-09 | 株式会社アルバック | Stress adjustment method |
CN106802742A (en) * | 2017-02-27 | 2017-06-06 | 武汉华星光电技术有限公司 | Organic light emission touching display screen and preparation method thereof |
GB2561865A (en) * | 2017-04-25 | 2018-10-31 | Univ Of The West Of Scotland | Apparatus and methods for depositing durable optical coatings |
WO2019079062A1 (en) * | 2017-10-16 | 2019-04-25 | Drexel University | Mxene layers as substrates for growth of highly oriented perovskite thin films |
CN111751916A (en) * | 2019-12-30 | 2020-10-09 | 宁波瑞凌新能源科技有限公司 | Barrier layer film structure and application thereof |
Family Cites Families (151)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3309302A (en) * | 1963-10-07 | 1967-03-14 | Varian Associates | Method of preparing an electron tube including sputtering a suboxide of titanium on dielectric components thereof |
US3616403A (en) | 1968-10-25 | 1971-10-26 | Ibm | Prevention of inversion of p-type semiconductor material during rf sputtering of quartz |
US3850604A (en) | 1972-12-11 | 1974-11-26 | Gte Laboratories Inc | Preparation of chalcogenide glass sputtering targets |
US4111523A (en) | 1973-07-23 | 1978-09-05 | Bell Telephone Laboratories, Incorporated | Thin film optical waveguide |
US4082569A (en) * | 1977-02-22 | 1978-04-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Solar cell collector |
US4437966A (en) | 1982-09-30 | 1984-03-20 | Gte Products Corporation | Sputtering cathode apparatus |
DE3345659A1 (en) * | 1983-06-16 | 1984-12-20 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | ZIRCONIUM DIOXIDE CERAMIC BODY (ZRO (DOWN ARROW) 2 (DOWN ARROW)) AND METHOD FOR PRODUCING THE SAME |
EP0140638B1 (en) * | 1983-10-17 | 1988-06-29 | Tosoh Corporation | High-strength zirconia type sintered body and process for preparation thereof |
DE3417732A1 (en) | 1984-05-12 | 1986-07-10 | Leybold-Heraeus GmbH, 5000 Köln | METHOD FOR APPLYING SILICON-CONTAINING LAYERS TO SUBSTRATES BY CATODIZING AND SPRAYING CATODE FOR CARRYING OUT THE METHOD |
GB8414878D0 (en) | 1984-06-11 | 1984-07-18 | Gen Electric Co Plc | Integrated optical waveguides |
US4785459A (en) * | 1985-05-01 | 1988-11-15 | Baer Thomas M | High efficiency mode matched solid state laser with transverse pumping |
US4710940A (en) * | 1985-10-01 | 1987-12-01 | California Institute Of Technology | Method and apparatus for efficient operation of optically pumped laser |
US5173271A (en) * | 1985-12-04 | 1992-12-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
US5296089A (en) * | 1985-12-04 | 1994-03-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
US4915810A (en) | 1988-04-25 | 1990-04-10 | Unisys Corporation | Target source for ion beam sputter deposition |
US5792550A (en) | 1989-10-24 | 1998-08-11 | Flex Products, Inc. | Barrier film having high colorless transparency and method |
JP2758948B2 (en) | 1989-12-15 | 1998-05-28 | キヤノン株式会社 | Thin film formation method |
DE4022090A1 (en) | 1989-12-18 | 1991-06-20 | Forschungszentrum Juelich Gmbh | ELECTRO-OPTICAL COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
US5252194A (en) | 1990-01-26 | 1993-10-12 | Varian Associates, Inc. | Rotating sputtering apparatus for selected erosion |
US5085904A (en) | 1990-04-20 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Barrier materials useful for packaging |
US5306569A (en) | 1990-06-15 | 1994-04-26 | Hitachi Metals, Ltd. | Titanium-tungsten target material and manufacturing method thereof |
JP2755471B2 (en) | 1990-06-29 | 1998-05-20 | 日立電線株式会社 | Rare earth element doped optical waveguide and method of manufacturing the same |
US5225288A (en) | 1990-08-10 | 1993-07-06 | E. I. Du Pont De Nemours And Company | Solvent blockers and multilayer barrier coatings for thin films |
US5645626A (en) * | 1990-08-10 | 1997-07-08 | Bend Research, Inc. | Composite hydrogen separation element and module |
US5110696A (en) * | 1990-11-09 | 1992-05-05 | Bell Communications Research | Rechargeable lithiated thin film intercalation electrode battery |
NL9002844A (en) * | 1990-12-21 | 1992-07-16 | Philips Nv | SYSTEM INCLUDING A DEVICE AND A CASSETTE, AND A DEVICE AND A CASSETTE SUITABLE FOR USE IN SUCH A SYSTEM. |
US5119460A (en) | 1991-04-25 | 1992-06-02 | At&T Bell Laboratories | Erbium-doped planar optical device |
US5200029A (en) | 1991-04-25 | 1993-04-06 | At&T Bell Laboratories | Method of making a planar optical amplifier |
US5107538A (en) | 1991-06-06 | 1992-04-21 | At&T Bell Laboratories | Optical waveguide system comprising a rare-earth Si-based optical device |
US5196041A (en) | 1991-09-17 | 1993-03-23 | The Charles Stark Draper Laboratory, Inc. | Method of forming an optical channel waveguide by gettering |
US5355089A (en) | 1992-07-22 | 1994-10-11 | Duracell Inc. | Moisture barrier for battery with electrochemical tester |
JP2755844B2 (en) | 1991-09-30 | 1998-05-25 | シャープ株式会社 | Plastic substrate liquid crystal display |
US5702829A (en) * | 1991-10-14 | 1997-12-30 | Commissariat A L'energie Atomique | Multilayer material, anti-erosion and anti-abrasion coating incorporating said multilayer material |
DE69220193T2 (en) | 1991-12-11 | 1997-11-06 | Mobil Oil Corp | Highly blocking film |
US5287427A (en) | 1992-05-05 | 1994-02-15 | At&T Bell Laboratories | Method of making an article comprising an optical component, and article comprising the component |
US5338625A (en) * | 1992-07-29 | 1994-08-16 | Martin Marietta Energy Systems, Inc. | Thin film battery and method for making same |
JP3214910B2 (en) | 1992-08-18 | 2001-10-02 | 富士通株式会社 | Manufacturing method of planar waveguide optical amplifier |
US5538796A (en) * | 1992-10-13 | 1996-07-23 | General Electric Company | Thermal barrier coating system having no bond coat |
US5942089A (en) | 1996-04-22 | 1999-08-24 | Northwestern University | Method for sputtering compounds on a substrate |
JPH06158308A (en) * | 1992-11-24 | 1994-06-07 | Hitachi Metals Ltd | Target for sputtering for indium-tin oxide film and its production |
US6022458A (en) | 1992-12-07 | 2000-02-08 | Canon Kabushiki Kaisha | Method of production of a semiconductor substrate |
AU669754B2 (en) | 1992-12-18 | 1996-06-20 | Becton Dickinson & Company | Barrier coating |
US5303319A (en) | 1992-12-28 | 1994-04-12 | Honeywell Inc. | Ion-beam deposited multilayer waveguides and resonators |
US5427669A (en) | 1992-12-30 | 1995-06-27 | Advanced Energy Industries, Inc. | Thin film DC plasma processing system |
US5718813A (en) | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
JPH06279185A (en) | 1993-03-25 | 1994-10-04 | Canon Inc | Forming method of diamond crystal and diamond crystal film |
US5613995A (en) | 1993-04-23 | 1997-03-25 | Lucent Technologies Inc. | Method for making planar optical waveguides |
US5499207A (en) | 1993-08-06 | 1996-03-12 | Hitachi, Ltd. | Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same |
JP2642849B2 (en) | 1993-08-24 | 1997-08-20 | 株式会社フロンテック | Thin film manufacturing method and manufacturing apparatus |
US5478456A (en) * | 1993-10-01 | 1995-12-26 | Minnesota Mining And Manufacturing Company | Sputtering target |
US5738731A (en) * | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
US5487822A (en) | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
US5433835B1 (en) | 1993-11-24 | 1997-05-20 | Applied Materials Inc | Sputtering device and target with cover to hold cooling fluid |
US5654984A (en) | 1993-12-03 | 1997-08-05 | Silicon Systems, Inc. | Signal modulation across capacitors |
US5569520A (en) * | 1994-01-12 | 1996-10-29 | Martin Marietta Energy Systems, Inc. | Rechargeable lithium battery for use in applications requiring a low to high power output |
US5561004A (en) * | 1994-02-25 | 1996-10-01 | Bates; John B. | Packaging material for thin film lithium batteries |
US5475528A (en) | 1994-03-25 | 1995-12-12 | Corning Incorporated | Optical signal amplifier glasses |
US5472795A (en) * | 1994-06-27 | 1995-12-05 | Board Of Regents Of The University Of The University Of Wisconsin System, On Behalf Of The University Of Wisconsin-Milwaukee | Multilayer nanolaminates containing polycrystalline zirconia |
WO1996000996A1 (en) | 1994-06-30 | 1996-01-11 | The Whitaker Corporation | Planar hybrid optical amplifier |
US5457569A (en) | 1994-06-30 | 1995-10-10 | At&T Ipm Corp. | Semiconductor amplifier or laser having integrated lens |
JP3407409B2 (en) | 1994-07-27 | 2003-05-19 | 富士通株式会社 | Manufacturing method of high dielectric constant thin film |
US5483613A (en) | 1994-08-16 | 1996-01-09 | At&T Corp. | Optical device with substrate and waveguide structure having thermal matching interfaces |
US5909346A (en) * | 1994-08-26 | 1999-06-01 | Aiwa Research & Development, Inc. | Thin magnetic film including multiple geometry gap structures on a common substrate |
US5555342A (en) | 1995-01-17 | 1996-09-10 | Lucent Technologies Inc. | Planar waveguide and a process for its fabrication |
US5607789A (en) | 1995-01-23 | 1997-03-04 | Duracell Inc. | Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same |
JPH10509773A (en) | 1995-04-25 | 1998-09-22 | ザ ビーオーシー グループ インコーポレイテッド | Sputtering apparatus and method for forming a dielectric layer on a substrate |
US5771562A (en) | 1995-05-02 | 1998-06-30 | Motorola, Inc. | Passivation of organic devices |
KR100342189B1 (en) | 1995-07-12 | 2002-11-30 | 삼성전자 주식회사 | Method for producing rare earth elements-added optical fiber by using volatile composite |
ATE204029T1 (en) | 1995-08-18 | 2001-08-15 | Heraeus Gmbh W C | TARGET FOR CATHODE SPUTTING AND METHOD FOR PRODUCING SUCH A TARGET |
US5563979A (en) | 1995-08-31 | 1996-10-08 | Lucent Technologies Inc. | Erbium-doped planar optical device |
US5689522A (en) | 1995-10-02 | 1997-11-18 | The Regents Of The University Of California | High efficiency 2 micrometer laser utilizing wing-pumped Tm3+ and a laser diode array end-pumping architecture |
US5719976A (en) | 1995-10-24 | 1998-02-17 | Lucent Technologies, Inc. | Optimized waveguide structure |
JP3298799B2 (en) | 1995-11-22 | 2002-07-08 | ルーセント テクノロジーズ インコーポレイテッド | Cladding pump fiber and its manufacturing method |
US5686360A (en) | 1995-11-30 | 1997-11-11 | Motorola | Passivation of organic devices |
US5811177A (en) | 1995-11-30 | 1998-09-22 | Motorola, Inc. | Passivation of electroluminescent organic devices |
US5930584A (en) | 1996-04-10 | 1999-07-27 | United Microelectronics Corp. | Process for fabricating low leakage current electrode for LPCVD titanium oxide films |
US5853830A (en) | 1996-06-12 | 1998-12-29 | Hoechst Trespaphan Gmbh | Transparent barrier coatings exhibiting reduced thin film interference |
US5731661A (en) | 1996-07-15 | 1998-03-24 | Motorola, Inc. | Passivation of electroluminescent organic devices |
US5855744A (en) | 1996-07-19 | 1999-01-05 | Applied Komatsu Technology, Inc. | Non-planar magnet tracking during magnetron sputtering |
US5693956A (en) | 1996-07-29 | 1997-12-02 | Motorola | Inverted oleds on hard plastic substrate |
JP3631341B2 (en) | 1996-10-18 | 2005-03-23 | Tdk株式会社 | Multilayer composite functional element and method for manufacturing the same |
US5841931A (en) | 1996-11-26 | 1998-11-24 | Massachusetts Institute Of Technology | Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby |
JPH10195649A (en) * | 1996-12-27 | 1998-07-28 | Sony Corp | Magnetron sputter device and manufacture of semiconductor device |
US5944964A (en) * | 1997-02-13 | 1999-08-31 | Optical Coating Laboratory, Inc. | Methods and apparatus for preparing low net stress multilayer thin film coatings |
US5847865A (en) | 1997-02-18 | 1998-12-08 | Regents Of The University Of Minnesota | Waveguide optical amplifier |
US6039834A (en) * | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
US5952778A (en) | 1997-03-18 | 1999-09-14 | International Business Machines Corporation | Encapsulated organic light emitting device |
JPH10265948A (en) * | 1997-03-25 | 1998-10-06 | Rohm Co Ltd | Substrate for semiconductor device and manufacture of the same |
US6242132B1 (en) * | 1997-04-16 | 2001-06-05 | Ut-Battelle, Llc | Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery |
US5948215A (en) | 1997-04-21 | 1999-09-07 | Tokyo Electron Limited | Method and apparatus for ionized sputtering |
US5830330A (en) | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
US6000603A (en) * | 1997-05-23 | 1999-12-14 | 3M Innovative Properties Company | Patterned array of metal balls and methods of making |
US5977582A (en) | 1997-05-23 | 1999-11-02 | Lucent Technologies Inc. | Capacitor comprising improved TaOx -based dielectric |
US6051114A (en) | 1997-06-23 | 2000-04-18 | Applied Materials, Inc. | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition |
US5831262A (en) | 1997-06-27 | 1998-11-03 | Lucent Technologies Inc. | Article comprising an optical fiber attached to a micromechanical device |
JP3813740B2 (en) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | Substrates for electronic devices |
US6052397A (en) | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
EP1055020A2 (en) * | 1998-02-12 | 2000-11-29 | ACM Research, Inc. | Plating apparatus and method |
US6004660A (en) | 1998-03-12 | 1999-12-21 | E.I. Du Pont De Nemours And Company | Oxygen barrier composite film structure |
US6177350B1 (en) * | 1998-04-14 | 2001-01-23 | Applied Materials, Inc. | Method for forming a multilayered aluminum-comprising structure on a substrate |
US6058233A (en) | 1998-06-30 | 2000-05-02 | Lucent Technologies Inc. | Waveguide array with improved efficiency for wavelength routers and star couplers in integrated optics |
DE19831719A1 (en) * | 1998-07-15 | 2000-01-20 | Alcatel Sa | Process for the production of planar waveguide structures and waveguide structure |
US6236793B1 (en) * | 1998-09-23 | 2001-05-22 | Molecular Optoelectronics Corporation | Optical channel waveguide amplifier |
KR100282487B1 (en) * | 1998-10-19 | 2001-02-15 | 윤종용 | Cell Capacitor Using High-Dielectric Multilayer Film and Its Manufacturing Method |
US6117279A (en) * | 1998-11-12 | 2000-09-12 | Tokyo Electron Limited | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition |
US6365300B1 (en) * | 1998-12-03 | 2002-04-02 | Sumitomo Electric Industries, Ltd. | Lithium secondary battery |
US6268695B1 (en) * | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
TW439308B (en) * | 1998-12-16 | 2001-06-07 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
US6379835B1 (en) * | 1999-01-12 | 2002-04-30 | Morgan Adhesives Company | Method of making a thin film battery |
US6306265B1 (en) * | 1999-02-12 | 2001-10-23 | Applied Materials, Inc. | High-density plasma for ionized metal deposition capable of exciting a plasma wave |
US6280875B1 (en) * | 1999-03-24 | 2001-08-28 | Teledyne Technologies Incorporated | Rechargeable battery structure with metal substrate |
US6242129B1 (en) * | 1999-04-02 | 2001-06-05 | Excellatron Solid State, Llc | Thin lithium film battery |
US6168884B1 (en) * | 1999-04-02 | 2001-01-02 | Lockheed Martin Energy Research Corporation | Battery with an in-situ activation plated lithium anode |
US6281142B1 (en) * | 1999-06-04 | 2001-08-28 | Micron Technology, Inc. | Dielectric cure for reducing oxygen vacancies |
US6046081A (en) | 1999-06-10 | 2000-04-04 | United Microelectronics Corp. | Method for forming dielectric layer of capacitor |
US6133670A (en) * | 1999-06-24 | 2000-10-17 | Sandia Corporation | Compact electrostatic comb actuator |
US6358327B1 (en) * | 1999-06-29 | 2002-03-19 | Applied Materials, Inc. | Method for endpoint detection using throttle valve position |
US6290821B1 (en) * | 1999-07-15 | 2001-09-18 | Seagate Technology Llc | Sputter deposition utilizing pulsed cathode and substrate bias power |
CA2389347A1 (en) * | 1999-12-02 | 2001-06-07 | Tony C. Kowalczyk | Photodefinition of optical devices |
US6451177B1 (en) * | 2000-01-21 | 2002-09-17 | Applied Materials, Inc. | Vault shaped target and magnetron operable in two sputtering modes |
US6627056B2 (en) * | 2000-02-16 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for ionized plasma deposition |
TW523615B (en) * | 2000-02-17 | 2003-03-11 | L3 Optics Inc | Guided wave optical switch based on an active semiconductor amplifier and a passive optical component |
US7194801B2 (en) * | 2000-03-24 | 2007-03-27 | Cymbet Corporation | Thin-film battery having ultra-thin electrolyte and associated method |
RU2002101129A (en) * | 2000-04-20 | 2003-09-27 | Конинклейке Филипс Электроникс Н.В. (Nl) | OPTICAL RECORDING MEDIA |
KR100341407B1 (en) * | 2000-05-01 | 2002-06-22 | 윤덕용 | A Crystall ization method of lithium transition metal oxide thin films by plasma treatm ent |
US6760520B1 (en) * | 2000-05-09 | 2004-07-06 | Teralux Corporation | System and method for passively aligning and coupling optical devices |
EP1160900A3 (en) * | 2000-05-26 | 2007-12-12 | Kabushiki Kaisha Riken | Embossed current collector separator for electrochemical fuel cell |
US6506289B2 (en) * | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
US6632563B1 (en) * | 2000-09-07 | 2003-10-14 | Front Edge Technology, Inc. | Thin film battery and method of manufacture |
DE10165080B4 (en) * | 2000-09-20 | 2015-05-13 | Hitachi Metals, Ltd. | Silicon nitride powder and sintered body and method of making the same and printed circuit board therewith |
US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
JP4461656B2 (en) * | 2000-12-07 | 2010-05-12 | セイコーエプソン株式会社 | Photoelectric conversion element |
US6673716B1 (en) * | 2001-01-30 | 2004-01-06 | Novellus Systems, Inc. | Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques |
US6558836B1 (en) * | 2001-02-08 | 2003-05-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Structure of thin-film lithium microbatteries |
US7164206B2 (en) * | 2001-03-28 | 2007-01-16 | Intel Corporation | Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layer |
US6743488B2 (en) * | 2001-05-09 | 2004-06-01 | Cpfilms Inc. | Transparent conductive stratiform coating of indium tin oxide |
US6768855B1 (en) * | 2001-07-05 | 2004-07-27 | Sandia Corporation | Vertically-tapered optical waveguide and optical spot transformer formed therefrom |
CN1974472B (en) * | 2001-08-28 | 2010-06-16 | Tdk株式会社 | Composition for thin-film capacitive device, insulating film, thin-film capacitive device, and capacitor |
US7115516B2 (en) * | 2001-10-09 | 2006-10-03 | Applied Materials, Inc. | Method of depositing a material layer |
US6750156B2 (en) * | 2001-10-24 | 2004-06-15 | Applied Materials, Inc. | Method and apparatus for forming an anti-reflective coating on a substrate |
US6683749B2 (en) * | 2001-12-19 | 2004-01-27 | Storage Technology Corporation | Magnetic transducer having inverted write element with zero delta in pole tip width |
US20030143853A1 (en) * | 2002-01-31 | 2003-07-31 | Celii Francis G. | FeRAM capacitor stack etch |
US6884327B2 (en) * | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US7378356B2 (en) * | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
US20030174391A1 (en) * | 2002-03-16 | 2003-09-18 | Tao Pan | Gain flattened optical amplifier |
TWI283031B (en) * | 2002-03-25 | 2007-06-21 | Epistar Corp | Method for integrating compound semiconductor with substrate of high thermal conductivity |
US6792026B2 (en) * | 2002-03-26 | 2004-09-14 | Joseph Reid Henrichs | Folded cavity solid-state laser |
US6818356B1 (en) * | 2002-07-09 | 2004-11-16 | Oak Ridge Micro-Energy, Inc. | Thin film battery and electrolyte therefor |
EP1597408B1 (en) * | 2003-02-27 | 2012-12-05 | Symmorphix, Inc. | Method for forming dielectric barrier layers |
US8728285B2 (en) * | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
WO2006063308A2 (en) * | 2004-12-08 | 2006-06-15 | Symmorphix, Inc. | DEPOSITION OF LICoO2 |
-
2004
- 2004-02-26 EP EP04715009A patent/EP1597408B1/en not_active Expired - Lifetime
- 2004-02-26 US US10/789,953 patent/US7205662B2/en not_active Expired - Fee Related
- 2004-02-26 KR KR1020057016055A patent/KR100691168B1/en not_active IP Right Cessation
- 2004-02-26 CN CN2004800055155A patent/CN1756856B/en not_active Expired - Fee Related
- 2004-02-26 WO PCT/US2004/005531 patent/WO2004077519A2/en active Application Filing
-
2005
- 2005-09-16 US US11/228,805 patent/US7262131B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9334557B2 (en) | 2007-12-21 | 2016-05-10 | Sapurast Research Llc | Method for sputter targets for electrolyte films |
US9532453B2 (en) | 2009-09-01 | 2016-12-27 | Sapurast Research Llc | Printed circuit board with integrated thin film battery |
Also Published As
Publication number | Publication date |
---|---|
US20050006768A1 (en) | 2005-01-13 |
US20060071592A1 (en) | 2006-04-06 |
US7205662B2 (en) | 2007-04-17 |
WO2004077519A2 (en) | 2004-09-10 |
CN1756856A (en) | 2006-04-05 |
CN1756856B (en) | 2011-10-12 |
KR100691168B1 (en) | 2007-03-09 |
WO2004077519A3 (en) | 2005-01-06 |
EP1597408B1 (en) | 2012-12-05 |
KR20060007367A (en) | 2006-01-24 |
EP1597408A2 (en) | 2005-11-23 |
US7262131B2 (en) | 2007-08-28 |
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