WO2004079814B1 - Modulated/composited cvd low-k films with improved mechanical and electrical properties for nanoelectronic devices - Google Patents

Modulated/composited cvd low-k films with improved mechanical and electrical properties for nanoelectronic devices

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Publication number
WO2004079814B1
WO2004079814B1 PCT/US2004/006265 US2004006265W WO2004079814B1 WO 2004079814 B1 WO2004079814 B1 WO 2004079814B1 US 2004006265 W US2004006265 W US 2004006265W WO 2004079814 B1 WO2004079814 B1 WO 2004079814B1
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WIPO (PCT)
Prior art keywords
compounds
power
sublayers
pulsed
period
Prior art date
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PCT/US2004/006265
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French (fr)
Other versions
WO2004079814A3 (en
WO2004079814A2 (en
Inventor
Son Van Nguyen
Yi Zheng
Original Assignee
Applied Materials Inc
Son Van Nguyen
Yi Zheng
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Publication date
Application filed by Applied Materials Inc, Son Van Nguyen, Yi Zheng filed Critical Applied Materials Inc
Publication of WO2004079814A2 publication Critical patent/WO2004079814A2/en
Publication of WO2004079814A3 publication Critical patent/WO2004079814A3/en
Publication of WO2004079814B1 publication Critical patent/WO2004079814B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Abstract

A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.

Claims

AMENDED CLAIMS[received by the International Bureau on 28 October 2004 (28.10.04); Claims 1, 3, 4, 13, 22, 24, 26, 29, 33, 35 and 38 amended; claims 2, 25 and 34 cancelled; (6 pages)]
1. A method of depositing a low k dielectric film on a substrate, comprising: exposing two or more compounds to pulsed RF power to deposit alternating low k dielectric sublayers on the substrate, wherein at least one of the two or more compounds is an organosilicon compound, and wherein the pulsed RF power comprises two or more frequencies of RF power.
2. The method of claim 1 , wherein one of the two or more frequencies is about 350 kHz and another of the two or more frequencies is about 100 MHz.
3. The method of claim 1, wherein one of the sublayers is deposited substantially from one of the two or more compounds during a first period of pulsed RF power at a first frequency of RF power, and an adjacent sublayer is deposited substantially from another compound of the two or more compounds during a second period of pulsed RF power at a second frequency of RF power.
4. The method of claim 1 , wherein the two or more compounds comprise a hydrocarbon.
5. The method of claim 1 , wherein the two or more compounds comprise diethoxymethylsilane and octamethylcyclotetrasiloxane.
6. The method of claim 1 , wherein the two or more compounds comprise oxygen.
7. The method of claim 1 , wherein the two or more compounds comprise carbon dioxide.
8. The method of claim 1, wherein each sublayer is about 1 nanometer to about 100 nanometers.
9. The method of claim 1, further comprising treating the alternating sublayers with an electron beam.
10. The method of claim 1 , wherein the two or more compounds are exposed to the pulsed RF power under conditions such that adjacent sublayers have one or more substantially different mechanical properties selected from the group consisting of compressive stress, tensile stress, modulus, adhesion, and hardness.
11. The method of claim 1 , wherein one of the sublayers is deposited substantially from the organosilicon compound, and an adjacent sublayer is deposited substantially from a second compound.
12. A method of depositing a low k dielectric film on a substrate, comprising: simultaneously exposing two or more compounds to pulsed RF power to deposit alternating low k dielectric sublayers on the substrate, wherein at least two of the compounds are organosilicon compounds and the pulsed RF power comprises pulses delivered for a first period of time at a first frequency of RF power and pulses delivered for a second period of time at a second frequency of RF power.
13. The method of claim 12, wherein at least one of the sublayers is a carbon-doped silicon oxide.
14. The method of claim 12, wherein the exposing two or more compounds to pulsed RF power comprises a process selected from the group consisting of chemical vapor deposition and atomic layer deposition.
15. The method of claim 12, wherein one of the sublayers is deposited substantially from one of the two or more compounds during the first period of time, and an adjacent sublayer is deposited substantially from another compound of the two or more compounds during the second period of time.
16. The method of claim 12, wherein the two or more compounds further comprise a hydrocarbon.
17. The method of claim 12, wherein the at least two organosilicon compounds comprise diethoxymethylsilane and octamethylcyclotetrasiloxane.
18. The method of claim 12, wherein the two or more compounds further comprise oxygen,
19. The method of claim 12, wherein the two or more compounds further comprise carbon dioxide.
20. The method of claim 12, further comprising treating the two or more sublayers with an electron beam.
21. The method of claim 12, wherein the two or more compounds are exposed to pulsed RF power under conditions such that adjacent sublayers have one or more substantially different mechanical properties selected from the group consisting of compressive stress, tensile stress, modulus, adhesion, and hardness.
22. The method of claim 12, wherein one of the sublayers is deposited substantially from one organosilicon compound having a structure selected from the group consisting of ring structures, linear structures, and fullerene structures, and an adjacent sublayer is deposited substantially from a second organosilicon compound having a structure that is different from the structure of the first compound and is selected from the group consisting of ring structures, linear structures, and fullerene structures.
23. A low k dielectric film comprising alternating low k dielectric sublayers, formed by a process comprising: exposing two or more compounds to pulsed RF power to deposit alternating low k dielectric sublayers on the substrate, wherein at least one of the two or more compounds is an organosilicon compound, and wherein the pulsed RF power comprises two or more f equencies of RF power.
21
24. The low k dielectric film of claim 23, wherein one of the sublayers is deposited substantially from one of the two or more compounds during a first period of pulsed RF power at a first frequency of RF power, and an adjacent sublayer is deposited substantially from another compound of the two or more compounds during a second period of pulsed RF power at a second frequency of RF power.
25. The low k dielectric film of claim 23, wherein the two or more compounds comprise oxygen.
26. The low k dielectric film of claim 23, further comprising treating the alternating sublayers with an electron beam.
27. A low k dielectric film comprising alternating low k dielectric sublayers, formed by a process comprising: simultaneously exposing two or more compounds to pulsed RF power to deposit alternating low k dielectric sublayers on the substrate, wherein at least two of the compounds are organosilicon compounds and the pulsed RF power comprises pulses delivered for a first period of time at a first frequency of RF power and pulses delivered for a second period of time at a second frequency of RF power.
28. The low k dielectric film of claim 27, wherein one of the sublayers is deposited substantially from one of the two or more compounds during the first period of time, and an adjacent sublayer is deposited substantially from another compound of the two or more compounds during the second period of time.
29. The low k dielectric film of claim 27, wherein the two or more compounds further comprise oxygen.
30. The low k dielectric film of claim 27, further comprising treating the alternating sublayers with an electron beam.
22
31. A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a deposition method, wherein the software routine comprises instructions for: exposing two or more compounds in the deposition chamber to pulsed RF power to deposit alternating low k dielectric sublayers on a substrate in the deposition chamber, wherein at least one of the two or more compounds is an organosilicon compound, and wherein the pulsed RF power comprises two or more frequencies of RF power.
32. The computer storage medium of claim 31 , wherein one of the sublayers is deposited substantially from one of the two or more compounds during a first period of pulsed RF power at a first frequency of RF power, and an adjacent sublayer is deposited substantially from another compound of the two or more compounds during a second period of pulsed RF power at a second frequency of RF power.
33. The computer storage medium of claim 31 , wherein the two or more compounds comprise oxygen.
34. The computer storage medium of claim 31 , further comprising treating the alternating sublayers with an electron beam.
35. A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a deposition method, wherein the software routine comprises instructions for: simultaneously exposing two or more compounds in the deposition chamber to pulsed RF power to deposit alternating low k dielectric sublayers on a substrate in the deposition chamber, wherein at least one of the compounds is an organosilicon compound and the pulsed RF power comprises pulses delivered for a first period of time at a first frequency of RF
23 power and pulses delivered for a second period of time at a second frequency of RF power.
36. The computer storage medium of claim 35, wherein one of the sublayers is deposited substantially from one of the two or more compounds during the first period of time, and an adjacent sublayer is deposited substantially from another compound of the two or more compounds during the second period of time.
37. The computer storage medium of claim 35, wherein the two or more compounds further comprise oxygen.
38. The computer storage medium of claim 35, further comprising treating the alternating sublayers with an electron beam.
24
PCT/US2004/006265 2003-03-03 2004-03-02 Modulated/composited cvd low-k films with improved mechanical and electrical properties for nanoelectronic devices WO2004079814A2 (en)

Applications Claiming Priority (2)

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US10/378,783 US7011890B2 (en) 2003-03-03 2003-03-03 Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices
US10/378,783 2003-03-03

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WO2004079814A3 WO2004079814A3 (en) 2005-01-13
WO2004079814B1 true WO2004079814B1 (en) 2005-03-17

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TWI351718B (en) 2011-11-01
WO2004079814A2 (en) 2004-09-16

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