WO2004083495A3 - Ultra low k (ulk) sicoh film and method - Google Patents

Ultra low k (ulk) sicoh film and method Download PDF

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Publication number
WO2004083495A3
WO2004083495A3 PCT/US2004/008195 US2004008195W WO2004083495A3 WO 2004083495 A3 WO2004083495 A3 WO 2004083495A3 US 2004008195 W US2004008195 W US 2004008195W WO 2004083495 A3 WO2004083495 A3 WO 2004083495A3
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WO
WIPO (PCT)
Prior art keywords
ultra low
hardness
elastic modulus
ulk
multiphase
Prior art date
Application number
PCT/US2004/008195
Other languages
French (fr)
Other versions
WO2004083495A2 (en
Inventor
Stephen M Gates
Alfred Grill
Original Assignee
Ibm
Stephen M Gates
Alfred Grill
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Stephen M Gates, Alfred Grill filed Critical Ibm
Priority to DE200460028922 priority Critical patent/DE602004028922D1/en
Priority to AT04757577T priority patent/ATE479729T1/en
Priority to EP20040757577 priority patent/EP1617957B1/en
Priority to CN200480012920XA priority patent/CN1787881B/en
Priority to JP2006507287A priority patent/JP2006521019A/en
Publication of WO2004083495A2 publication Critical patent/WO2004083495A2/en
Publication of WO2004083495A3 publication Critical patent/WO2004083495A3/en

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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

The present invention provides a multiphase, ultra low k film exhibiting improved elastic modulus and hardness, and various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, represented by (104), (103), (102) and (101) respectively, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. These films consist of a first phase (100) of “host” matrix that is a random network of hydrogenated oxidize silicon carbon material (SiCOH), and a second phase (105) consisting essentially of C and H atoms.
PCT/US2004/008195 2003-03-18 2004-03-17 Ultra low k (ulk) sicoh film and method WO2004083495A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE200460028922 DE602004028922D1 (en) 2003-03-18 2004-03-17 A method of making a film of extremely low dielectric constant
AT04757577T ATE479729T1 (en) 2003-03-18 2004-03-17 METHOD FOR PRODUCING AN EXTREMELY LOW DILECTRIC CONSTANT FILM
EP20040757577 EP1617957B1 (en) 2003-03-18 2004-03-17 Method of forming an ultra low dielectric constant film
CN200480012920XA CN1787881B (en) 2003-03-18 2004-03-17 Ultra low k (ulk) SiCOH film and manufacture method thereof
JP2006507287A JP2006521019A (en) 2003-03-18 2004-03-17 Ultra-low-k (ULK) SiCOH film and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/390,801 US7288292B2 (en) 2003-03-18 2003-03-18 Ultra low k (ULK) SiCOH film and method
US10/390,801 2003-03-18

Publications (2)

Publication Number Publication Date
WO2004083495A2 WO2004083495A2 (en) 2004-09-30
WO2004083495A3 true WO2004083495A3 (en) 2005-02-03

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PCT/US2004/008195 WO2004083495A2 (en) 2003-03-18 2004-03-17 Ultra low k (ulk) sicoh film and method

Country Status (9)

Country Link
US (3) US7288292B2 (en)
EP (1) EP1617957B1 (en)
JP (3) JP2006521019A (en)
KR (1) KR100724508B1 (en)
CN (1) CN1787881B (en)
AT (1) ATE479729T1 (en)
DE (1) DE602004028922D1 (en)
TW (1) TWI281707B (en)
WO (1) WO2004083495A2 (en)

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