WO2004088394A3 - High-speed silicon-based electro-optic modulator - Google Patents

High-speed silicon-based electro-optic modulator Download PDF

Info

Publication number
WO2004088394A3
WO2004088394A3 PCT/US2004/008814 US2004008814W WO2004088394A3 WO 2004088394 A3 WO2004088394 A3 WO 2004088394A3 US 2004008814 W US2004008814 W US 2004008814W WO 2004088394 A3 WO2004088394 A3 WO 2004088394A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
gate
relatively thin
dielectric
optic modulator
Prior art date
Application number
PCT/US2004/008814
Other languages
French (fr)
Other versions
WO2004088394A2 (en
Inventor
Robert Keith Montgomery
Margaret Ghiron
Prakash Gothoskar
Vipulkumar Patel
Kalpendu Shastri
Soham Pathak
Katherine A Yanushefski
Original Assignee
Sioptical Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sioptical Inc filed Critical Sioptical Inc
Priority to CA2519672A priority Critical patent/CA2519672C/en
Priority to JP2005518912A priority patent/JP4820649B2/en
Priority to EP04758207.7A priority patent/EP1613991B1/en
Publication of WO2004088394A2 publication Critical patent/WO2004088394A2/en
Publication of WO2004088394A3 publication Critical patent/WO2004088394A3/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2257Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12142Modulator
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12159Interferometer

Abstract

A silicon-based electro-optic modulator (30) is based on forming a gate region of a first conductivity to partially overly a body region of a second conductivity type, with a relatively thin dielectric layer (10) interposed between the contiguous portions of the gate and body regions (12, 10). The modulator may be formed on an SOI platform, with the body region formed in the relatively thin silicon surface layer of the SOI structure and the gate region formed of a relatively thin silicon layer (10) overlying the SOI structure. The doping in the gate and body regions is controlled to form lightly doped regions above and below the dielectric, thus defining the active region (16) of the device. Advantageously, the optical electric field essentially coincides with the free carrier concentration area in this active device region. The application of a modulation signal thus causes the simultaneous accumulation, depletion or inversion of free carriers on both sides of the dielectric at the same time, resulting in high speed operation.
PCT/US2004/008814 2003-03-25 2004-03-23 High-speed silicon-based electro-optic modulator WO2004088394A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CA2519672A CA2519672C (en) 2003-03-25 2004-03-23 High-speed silicon-based electro-optic modulator
JP2005518912A JP4820649B2 (en) 2003-03-25 2004-03-23 High-speed silicon-based electro-optic modulator
EP04758207.7A EP1613991B1 (en) 2003-03-25 2004-03-23 High-speed silicon-based electro-optic modulator

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US45724203P 2003-03-25 2003-03-25
US60/457,242 2003-03-25
US10/795,748 2004-03-08
US10/795,748 US6845198B2 (en) 2003-03-25 2004-03-08 High-speed silicon-based electro-optic modulator

Publications (2)

Publication Number Publication Date
WO2004088394A2 WO2004088394A2 (en) 2004-10-14
WO2004088394A3 true WO2004088394A3 (en) 2005-03-31

Family

ID=33135050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/008814 WO2004088394A2 (en) 2003-03-25 2004-03-23 High-speed silicon-based electro-optic modulator

Country Status (7)

Country Link
US (1) US6845198B2 (en)
EP (1) EP1613991B1 (en)
JP (1) JP4820649B2 (en)
KR (1) KR100808305B1 (en)
CN (1) CN100359367C (en)
CA (1) CA2519672C (en)
WO (1) WO2004088394A2 (en)

Families Citing this family (163)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002356843A1 (en) * 2001-10-22 2003-05-06 Massachusetts Institute Of Technology Light modulation using the franz-keldysh effect
US6884327B2 (en) * 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
CA2521660A1 (en) * 2003-04-23 2004-11-04 Sioptical, Inc. Sub-micron planar lightwave devices formed on an soi optical platform
CA2523298C (en) * 2003-05-08 2013-10-01 Sioptical, Inc. High speed, silicon-based electro-optic modulator
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US6954558B2 (en) * 2003-06-24 2005-10-11 Intel Corporation Method and apparatus for phase shifting an optical beam in an optical device
US7085443B1 (en) * 2003-08-15 2006-08-01 Luxtera, Inc. Doping profiles in PN diode optical modulators
US20050084195A1 (en) * 2003-10-15 2005-04-21 Hamann Hendrik F. Method and apparatus for forming lateral electrical contacts for photonic crystal devices
US7672558B2 (en) * 2004-01-12 2010-03-02 Honeywell International, Inc. Silicon optical device
US7298949B2 (en) * 2004-02-12 2007-11-20 Sioptical, Inc. SOI-based photonic bandgap devices
JP4847436B2 (en) * 2004-02-26 2011-12-28 シオプティカル インコーポレーテッド Active operation of light in a silicon-on-insulator (SOI) structure
US7177489B2 (en) * 2004-03-18 2007-02-13 Honeywell International, Inc. Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture
US7149388B2 (en) * 2004-03-18 2006-12-12 Honeywell International, Inc. Low loss contact structures for silicon based optical modulators and methods of manufacture
US7217584B2 (en) * 2004-03-18 2007-05-15 Honeywell International Inc. Bonded thin-film structures for optical modulators and methods of manufacture
US20050214989A1 (en) * 2004-03-29 2005-09-29 Honeywell International Inc. Silicon optoelectronic device
US20050230763A1 (en) * 2004-04-15 2005-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a microelectronic device with electrode perturbing sill
US20060024067A1 (en) * 2004-07-28 2006-02-02 Koontz Elisabeth M Optical I/O chip for use with distinct electronic chip
US20060063679A1 (en) * 2004-09-17 2006-03-23 Honeywell International Inc. Semiconductor-insulator-semiconductor structure for high speed applications
DE602005017512D1 (en) 2004-12-08 2009-12-17 Symmorphix Inc DEPOSIT OF LICOO2
FR2879820B1 (en) * 2004-12-16 2009-01-16 Commissariat Energie Atomique CAPACITIVE JUNCTION MODULATOR, CAPACITIVE JUNCTION AND METHOD OF MAKING SAME
US7167293B2 (en) * 2005-01-28 2007-01-23 Sioptical, Inc. Silicon-based electro-optic phase modulator with reduced residual amplitude modulation
US7751654B2 (en) * 2005-03-04 2010-07-06 Cornell Research Foundation, Inc. Electro-optic modulation
JP2006301379A (en) * 2005-04-21 2006-11-02 Univ Of Tokyo Optical semiconductor element and optical modulator
US7280712B2 (en) 2005-08-04 2007-10-09 Intel Corporation Method and apparatus for phase shifiting an optical beam in an optical device
WO2007065447A1 (en) * 2005-09-01 2007-06-14 Semus A/S Phase modulator and interferometer based on electro-optic effects in assymetrically strained group-iv material
US20070101927A1 (en) * 2005-11-10 2007-05-10 Honeywell International Inc. Silicon based optical waveguide structures and methods of manufacture
US7362443B2 (en) * 2005-11-17 2008-04-22 Honeywell International Inc. Optical gyro with free space resonator and method for sensing inertial rotation rate
US7514285B2 (en) * 2006-01-17 2009-04-07 Honeywell International Inc. Isolation scheme for reducing film stress in a MEMS device
US7442589B2 (en) * 2006-01-17 2008-10-28 Honeywell International Inc. System and method for uniform multi-plane silicon oxide layer formation for optical applications
US8818150B2 (en) * 2006-03-31 2014-08-26 Massachusetts Institute Of Technology Method and apparatus for modulation using a conductive waveguide
US7463360B2 (en) 2006-04-18 2008-12-09 Honeywell International Inc. Optical resonator gyro with integrated external cavity beam generator
US20070274655A1 (en) * 2006-04-26 2007-11-29 Honeywell International Inc. Low-loss optical device structure
US7454102B2 (en) * 2006-04-26 2008-11-18 Honeywell International Inc. Optical coupling structure
US7535576B2 (en) 2006-05-15 2009-05-19 Honeywell International, Inc. Integrated optical rotation sensor and method for sensing rotation rate
US20070280309A1 (en) * 2006-05-23 2007-12-06 Ansheng Liu Optical waveguide with single sided coplanar contact optical phase modulator
US7447395B2 (en) * 2006-06-15 2008-11-04 Sioptical, Inc. Silicon modulator offset tuning arrangement
KR100825733B1 (en) * 2006-09-29 2008-04-29 한국전자통신연구원 Silicon semiconductor based High speed ring optical modulator
US7515778B2 (en) * 2006-10-07 2009-04-07 Lightwire, Inc. Segmented optical modulator
US7796842B2 (en) * 2006-10-07 2010-09-14 Lightwire, Inc. AC-coupled differential drive circuit for opto-electronic modulators
US7483597B2 (en) * 2006-10-19 2009-01-27 Lightwire, Inc. Optical modulator utilizing multi-level signaling
US7880201B2 (en) 2006-11-09 2011-02-01 International Business Machines Corporation Optical modulator using a serpentine dielectric layer between silicon layers
FR2908569B1 (en) * 2006-11-10 2009-01-23 Thales Sa DEVICE FOR CONFINING THE OPTICAL CONTROL WAVE IN THE ACTIVE ZONE OF AN ELECTRONIC DEVICE WITH OPTICAL CONTROL
KR100772538B1 (en) 2006-12-05 2007-11-01 한국전자통신연구원 Photoelectric device using pn diode and silicon integrated circuit(ic) comprising the same photoelectric device
US7672553B2 (en) * 2007-03-01 2010-03-02 Alcatel-Lucent Usa Inc. High speed semiconductor optical modulator
US7659155B2 (en) * 2007-03-08 2010-02-09 International Business Machines Corporation Method of forming a transistor having gate and body in direct self-aligned contact
US7668420B2 (en) * 2007-07-26 2010-02-23 Hewlett-Packard Development Company, L.P. Optical waveguide ring resonator with an intracavity active element
US8362494B2 (en) * 2007-08-08 2013-01-29 Agency For Science, Technology And Research Electro-optic device with novel insulating structure and a method for manufacturing the same
US7657130B2 (en) * 2007-10-19 2010-02-02 Lightwire, Inc. Silicon-based optical modulator for analog applications
US7937675B2 (en) * 2007-11-06 2011-05-03 International Business Machines Corporation Structure including transistor having gate and body in direct self-aligned contact
KR100958718B1 (en) * 2007-12-07 2010-05-18 한국전자통신연구원 Semiconductor intergrated circuits including a electrooptic device for change optical phase
CN101458402B (en) * 2007-12-12 2010-06-02 中国科学院半导体研究所 Electro-optic modulator of SOI substrate and CMOS process
JP5135003B2 (en) * 2008-02-29 2013-01-30 株式会社フジクラ Optical element, wavelength dispersion correction element, and phase modulation element
JP5251981B2 (en) * 2008-06-26 2013-07-31 日本電気株式会社 Optical control element and optical waveguide circuit
CN101661137B (en) * 2008-08-27 2010-12-22 中国科学院半导体研究所 Method for making silicon waveguide photoelectric converter used in 1.55mu m communication wave band
US8149493B2 (en) * 2008-09-06 2012-04-03 Sifotonics Technologies (Usa) Inc. Electro-optic silicon modulator
US7747122B2 (en) 2008-09-30 2010-06-29 Intel Corporation Method and apparatus for high speed silicon optical modulation using PN diode
JP5171538B2 (en) * 2008-10-17 2013-03-27 ファイベスト株式会社 Optical modulator and tunable laser module
JP5369737B2 (en) * 2009-02-10 2013-12-18 日本電気株式会社 Optical communication system and manufacturing method thereof
JP5648628B2 (en) 2009-02-25 2015-01-07 日本電気株式会社 Light modulation structure and light modulator
US8936962B2 (en) * 2009-03-13 2015-01-20 Nec Corporation Optical modulator and method for manufacturing same
US8520984B2 (en) * 2009-06-12 2013-08-27 Cisco Technology, Inc. Silicon-based optical modulator with improved efficiency and chirp control
WO2010146926A1 (en) * 2009-06-16 2010-12-23 日本電気株式会社 Connecting channel
US8320720B2 (en) * 2009-08-19 2012-11-27 Mark Webster Advanced modulation formats for silicon-based optical modulators
US9002144B2 (en) * 2009-09-10 2015-04-07 Nec Corporation Electro-optical modulator
US8450186B2 (en) * 2009-09-25 2013-05-28 Intel Corporation Optical modulator utilizing wafer bonding technology
GB2477131A (en) * 2010-01-22 2011-07-27 Univ Surrey Electro-optic device
GB2477935A (en) * 2010-02-17 2011-08-24 Univ Surrey Electro-optic device with a waveguide rib
SG173939A1 (en) * 2010-03-01 2011-09-29 Nec Corp Silicon-based electro-optic device
WO2011108508A1 (en) 2010-03-05 2011-09-09 日本電気株式会社 Optical modulator device
US8363986B2 (en) * 2010-03-10 2013-01-29 Mark Webster Dopant profile control for high speed silicon-based optical modulators
US8620115B2 (en) 2010-03-10 2013-12-31 Cisco Technology, Inc. Optical modulators with controllable chirp
JP2011203662A (en) * 2010-03-26 2011-10-13 Mitsubishi Electric Corp Optical modulator, and method of manufacturing the same
US8300990B2 (en) * 2010-04-14 2012-10-30 Oracle America, Inc. Slotted optical waveguide with electro-optic material
US8538206B1 (en) 2010-05-05 2013-09-17 Aurrion, Llc Hybrid silicon electro-optic modulator
US8538221B1 (en) 2010-05-05 2013-09-17 Aurrion, Llc Asymmetric hybrid photonic devices
KR101070409B1 (en) 2010-08-02 2011-10-06 한국전자통신연구원 Mach-zehnder modulator
JP5300807B2 (en) * 2010-09-03 2013-09-25 株式会社東芝 Light modulation element
US20120114001A1 (en) 2010-11-10 2012-05-10 Fang Alexander W Hybrid ridge waveguide
FR2968776B1 (en) 2010-12-13 2012-12-28 Commissariat Energie Atomique METHOD FOR MAKING A SLICED SILICON OPTICAL GUIDE
GB201106204D0 (en) * 2011-04-12 2011-05-25 Oxsensis Ltd Optical sensor
US20120321240A1 (en) * 2011-04-29 2012-12-20 Luca Alloatti Electro-optical device and method for processing an optical signal
SG11201401800PA (en) 2011-10-26 2014-09-26 Fujikura Ltd Optical element and mach-zehnder optical waveguide element
US9341868B2 (en) 2012-03-30 2016-05-17 Nec Corporation Silicon-based electro-optical device
US8891913B1 (en) * 2012-07-11 2014-11-18 Aurrion, Inc. Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
US9684194B2 (en) * 2012-08-14 2017-06-20 University Of Southampton Method for making electro-optical device
US10135539B2 (en) 2012-10-19 2018-11-20 Massachusetts Institute Of Technology Devices and techniques for integrated optical data communication
SG2013082102A (en) 2012-11-05 2014-06-27 Agency Science Tech & Res Method for forming an optical modulator
US10025120B2 (en) 2012-12-13 2018-07-17 Luxtera, Inc. Method and system for a low parasitic silicon high-speed phase modulator having raised fingers perpendicular to the PN junction
US9285651B2 (en) 2013-02-22 2016-03-15 SiFotonics Technologies Co, Ltd. Electro-optic silicon modulator with longitudinally nonuniform modulation
US10048518B2 (en) * 2013-03-19 2018-08-14 Luxtera, Inc. Method and system for a low-voltage integrated silicon high-speed modulator
US9541775B2 (en) * 2013-03-19 2017-01-10 Luxtera, Inc. Method and system for a low-voltage integrated silicon high-speed modulator
US9703125B2 (en) 2013-03-26 2017-07-11 Nec Corporation Silicon-based electro-optic modulator
CN103226252B (en) * 2013-05-06 2016-05-18 中国科学院半导体研究所 A kind of doped structure that improves depletion type silicon-based electro-optical modulator modulation efficiency
JP2016524722A (en) * 2013-05-14 2016-08-18 コリアント・アドヴァンスド・テクノロジー・エルエルシー Super-responsive phase shifter for depletion mode silicon modulator
US9535308B2 (en) * 2013-09-25 2017-01-03 Oracle International Corporation Enhanced optical modulation using slow light
FR3011346A1 (en) * 2013-10-02 2015-04-03 St Microelectronics Sa ELECTRO-OPTICAL DEHASTER WITH OXIDE CAPABILITY
US9507180B2 (en) * 2013-11-04 2016-11-29 Futurewei Technologies, Inc. Patterned poly silicon structure as top electric contact to MOS-type optical modulators
US9766484B2 (en) 2014-01-24 2017-09-19 Cisco Technology, Inc. Electro-optical modulator using waveguides with overlapping ridges
WO2015116541A1 (en) 2014-01-29 2015-08-06 Huawei Technologies Co., Ltd. Interdigitated optical modulator
US9829726B2 (en) 2014-02-17 2017-11-28 National Institute Of Advanced Industrial Science And Technology Electro-optical modulator
US10928659B2 (en) 2014-02-24 2021-02-23 Rockley Photonics Limited Optoelectronic device
US10222677B2 (en) 2014-02-24 2019-03-05 Rockley Photonics Limited Optoelectronic device
GB2543122B (en) * 2015-11-12 2018-07-18 Rockley Photonics Ltd An optoelectronic component
US20170082876A1 (en) * 2014-02-24 2017-03-23 Rockley Photonics Limited Detector remodulator
JP6409299B2 (en) * 2014-03-27 2018-10-24 日本電気株式会社 Optical modulation element and optical modulator
JP6413296B2 (en) 2014-03-27 2018-10-31 日本電気株式会社 Optical modulation element and optical modulator
US9429776B2 (en) * 2014-06-30 2016-08-30 Sifotonics Technologies Co., Ltd. Silicon-based rib-waveguide modulator and fabrication method thereof
CN105629519B (en) * 2014-11-06 2018-07-06 中科院南通光电工程中心 Silicon substrate optical modulator
CN105629522B (en) * 2014-11-06 2018-07-06 中科院南通光电工程中心 Silicon substrate optical modulator
CN104393133B (en) * 2014-12-05 2017-11-07 武汉邮电科学研究院 A kind of doped structure for the efficiency and bandwidth for improving silicon-based electro-optic tuning device
US9575337B2 (en) 2014-12-12 2017-02-21 Cisco Technology, Inc. Electro-optic modulator termination
DE102014119195B4 (en) * 2014-12-19 2016-10-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Electro-optical modulator
WO2016139484A1 (en) 2015-03-05 2016-09-09 Rockley Photonics Limited Waveguide modulator structures
US10678115B2 (en) 2015-03-05 2020-06-09 Rockley Photonics Limited Waveguide modulator structures
US10921616B2 (en) 2016-11-23 2021-02-16 Rockley Photonics Limited Optoelectronic device
US11150494B2 (en) 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
US10216059B2 (en) 2015-03-05 2019-02-26 Rockley Photonics Limited Waveguide modulator structures
US10088697B2 (en) * 2015-03-12 2018-10-02 International Business Machines Corporation Dual-use electro-optic and thermo-optic modulator
WO2016157687A1 (en) 2015-03-31 2016-10-06 日本電気株式会社 Electro-optic device
US9523870B2 (en) * 2015-04-07 2016-12-20 Futurewei Technologies, Inc. Vertical PN silicon modulator
JP6062496B1 (en) * 2015-06-26 2017-01-18 株式会社フジクラ Optical waveguide device
US10908438B1 (en) 2015-10-12 2021-02-02 National Technology & Engineering Solutions Of Sandia, Llc Electroabsorption optical modulator
US10908440B1 (en) 2015-10-12 2021-02-02 National Technology & Engineering Solutions Of Sandia, Llc Methods of epsilon-near-zero optical modulation
CN105511119A (en) * 2016-01-15 2016-04-20 北京大学 Doping structure of silicon-substrate electrooptical modulator
FR3047811B1 (en) 2016-02-12 2018-03-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives MODULATOR OF PROPAGATION LOSSES AND OF THE PROPAGATION INDEX OF A GUIDE OPTICAL SIGNAL
US10514503B2 (en) * 2016-03-04 2019-12-24 The Governing Council Of The University Of Toronto System and method for manufacturing a semiconductor junction
TW201734581A (en) * 2016-03-28 2017-10-01 源傑科技股份有限公司 Light modulator
CN107290873A (en) * 2016-04-01 2017-10-24 源杰科技股份有限公司 Light modulator
JP6457440B2 (en) * 2016-07-06 2019-01-23 株式会社フジクラ Optical modulator and method for manufacturing optical modulator
FR3054926B1 (en) * 2016-08-08 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR MANUFACTURING PROPAGATION LOSS MODULATOR AND PROPAGATION INDEX OF OPTICAL SIGNAL
GB201613791D0 (en) 2016-08-11 2016-09-28 Univ Southampton Optical structure and method of fabricating an optical structure
EP3506001B1 (en) * 2016-08-29 2021-06-02 Nippon Telegraph and Telephone Corporation Optical modulator
CN106291990B (en) * 2016-08-29 2019-09-03 上海交通大学 Silicon substrate infuses the capacitive electrooptic modulator of oxygen
US11101256B2 (en) * 2016-11-23 2021-08-24 Rockley Photonics Limited Optical modulators
US11036006B2 (en) 2016-12-02 2021-06-15 Rockley Photonics Limited Waveguide device and method of doping a waveguide device
US11105975B2 (en) 2016-12-02 2021-08-31 Rockley Photonics Limited Waveguide optoelectronic device
US10353267B2 (en) * 2016-12-30 2019-07-16 Huawei Technologies Co., Ltd. Carrier-effect based optical switch
JP7037287B2 (en) 2017-06-01 2022-03-16 株式会社フジクラ Optical waveguide element
GB2563278B (en) 2017-06-09 2022-10-26 Univ Southampton Optoelectronic device and method of manufacturing thereof
GB2576652B (en) 2017-07-05 2021-12-22 Rockley Photonics Ltd Optoelectronic device
US11428962B2 (en) 2017-08-22 2022-08-30 Rockley Photonics Limited Optical modulator and method of fabricating an optical modulator using rare earth oxide
WO2019047235A1 (en) * 2017-09-11 2019-03-14 华为技术有限公司 Phase modulator and fabrication method therefor, and silicon-substrate electro-optic modulator
WO2019148011A1 (en) * 2018-01-26 2019-08-01 Ciena Corporation Silicon-based modulator with optimized doping profiles and different transition zone thicknesses
JP6922781B2 (en) * 2018-02-22 2021-08-18 日本電信電話株式会社 Light modulator
JP2019159273A (en) 2018-03-16 2019-09-19 日本電気株式会社 Electro-absorption optical modulator
US10330962B1 (en) 2018-04-17 2019-06-25 Ciena Corporation Patterned accumulation mode capacitive phase shifter
JP2019215488A (en) 2018-06-14 2019-12-19 日本電気株式会社 Electrooptical modulator
KR102171432B1 (en) 2018-08-03 2020-10-29 한국과학기술연구원 Optical phase shifter and optical switch device using ferroelectric material
JP7145697B2 (en) 2018-08-27 2022-10-03 日本ルメンタム株式会社 Electro-optical waveguide device and optical module
CN110955066B (en) * 2018-09-27 2023-08-01 上海新微技术研发中心有限公司 Phase shifter and silicon-based electro-optic modulator
US10969546B2 (en) 2018-11-21 2021-04-06 Cisco Technology, Inc. Electro-optic modulator with monocrystalline semiconductor waveguides
US10921619B2 (en) 2019-03-12 2021-02-16 Cisco Technology, Inc. Optical modulator with region epitaxially re-grown over polycrystalline silicon
US11036069B2 (en) 2019-03-18 2021-06-15 Cisco Technology, Inc. Optical modulator using monocrystalline and polycrystalline silicon
US20220404650A1 (en) * 2019-08-26 2022-12-22 Rockley Photonics Limited Optical modulator
US11860417B2 (en) * 2019-09-09 2024-01-02 Cisco Technology, Inc. Precision spacing control for optical waveguides
US11112624B2 (en) 2019-10-14 2021-09-07 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US10989876B1 (en) 2019-12-23 2021-04-27 Globalfoundries U.S. Inc. Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segments
CN113629129B (en) * 2020-05-07 2023-11-17 华为技术有限公司 PN junction and modulator
US11442296B2 (en) * 2020-07-20 2022-09-13 Taiwan Semiconductor Manufacturing Company Ltd. Waveguide structure and method for forming the same
KR20220019331A (en) 2020-08-10 2022-02-17 삼성전자주식회사 Package substrate and semiconductor package including the same
US20230030971A1 (en) * 2021-07-28 2023-02-02 Cisco Technology, Inc. Silicon germanium-based semiconductor-insulator-semiconductor capacitor (siscap) modulator
TW202401056A (en) * 2022-03-11 2024-01-01 美商沛思量子公司 Bto phase shifter and method of fabrication thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350935A (en) * 1981-12-16 1994-09-27 Harris Corporation Semiconductor device with improved turn-off capability
US5466348A (en) * 1991-10-21 1995-11-14 Holm-Kennedy; James W. Methods and devices for enhanced biochemical sensing
US5939742A (en) * 1997-02-10 1999-08-17 Lucent Technologies Inc. Field-effect photo-transistor

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4787691A (en) * 1987-03-26 1988-11-29 The United States Of America As Represented By The Secretary Of The Air Force Electro-optical silicon devices
US5140652A (en) * 1988-05-30 1992-08-18 Koninklijke Ptt Netherland N.V. Electro-optical component and method for making the same
US4997246A (en) * 1989-12-21 1991-03-05 International Business Machines Corporation Silicon-based rib waveguide optical modulator
US5757986A (en) * 1993-09-21 1998-05-26 Bookham Technology Limited Integrated silicon pin diode electro-optic waveguide
TW333671B (en) * 1996-03-25 1998-06-11 Sanyo Electric Co The semiconductor device and its producing method
JP4257482B2 (en) * 1996-06-28 2009-04-22 セイコーエプソン株式会社 THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, CIRCUIT USING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE
US6480641B1 (en) * 1997-12-19 2002-11-12 Intel Corporation Method and apparatus for optically modulating light through the back side of an integrated circuit die along the side walls of junctions
US6374003B1 (en) * 1997-12-19 2002-04-16 Intel Corporation Method and apparatus for optically modulating light through the back side of an integrated circuit die using a plurality of optical beams
US6233070B1 (en) * 1998-05-19 2001-05-15 Bookham Technology Plc Optical system and method for changing the lengths of optical paths and the phases of light beams
US6584239B1 (en) * 1998-05-22 2003-06-24 Bookham Technology Plc Electro optic modulator
US6103008A (en) * 1998-07-30 2000-08-15 Ut-Battelle, Llc Silicon-integrated thin-film structure for electro-optic applications
US6323985B1 (en) * 1998-12-30 2001-11-27 Intel Corporation Mosfet through silicon modulator and method
GB2348293A (en) * 1999-03-25 2000-09-27 Bookham Technology Ltd Optical phase modulator
JP2001110903A (en) * 1999-10-13 2001-04-20 Matsushita Electric Ind Co Ltd Layout structure of integrated circuit, and method and device for designing layout of cmos circuit
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6483954B2 (en) * 2000-12-20 2002-11-19 Intel Corporation Method and apparatus for coupling to regions in an optical modulator
JP2002222933A (en) * 2001-01-26 2002-08-09 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof
US6621128B2 (en) * 2001-02-28 2003-09-16 United Microelectronics Corp. Method of fabricating a MOS capacitor
US6501867B2 (en) * 2001-04-17 2002-12-31 Lucent Technologies Inc. Chirp compensated Mach-Zehnder electro-optic modulator
US6947615B2 (en) * 2001-05-17 2005-09-20 Sioptical, Inc. Optical lens apparatus and associated method
US6522462B2 (en) * 2001-06-29 2003-02-18 Super Light Wave Corp. All optical logic using cross-phase modulation amplifiers and mach-zehnder interferometers with phase-shift devices
US6552838B2 (en) * 2001-07-18 2003-04-22 Agere Systems Inc. LiNbO3 Mach-Zehnder modulator with low drive voltage requirement and adjustable chirp
JP2003066387A (en) * 2001-08-24 2003-03-05 Nec Corp Filter device
US6990257B2 (en) * 2001-09-10 2006-01-24 California Institute Of Technology Electronically biased strip loaded waveguide
IL148716A0 (en) * 2002-03-14 2002-09-12 Yissum Res Dev Co Control of optical signals by mos (cosmos) device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350935A (en) * 1981-12-16 1994-09-27 Harris Corporation Semiconductor device with improved turn-off capability
US5466348A (en) * 1991-10-21 1995-11-14 Holm-Kennedy; James W. Methods and devices for enhanced biochemical sensing
US5939742A (en) * 1997-02-10 1999-08-17 Lucent Technologies Inc. Field-effect photo-transistor

Also Published As

Publication number Publication date
KR100808305B1 (en) 2008-02-27
EP1613991A4 (en) 2009-10-28
WO2004088394A2 (en) 2004-10-14
JP4820649B2 (en) 2011-11-24
US6845198B2 (en) 2005-01-18
EP1613991B1 (en) 2013-07-24
US20040208454A1 (en) 2004-10-21
CA2519672A1 (en) 2004-10-14
JP2006515082A (en) 2006-05-18
CN1764863A (en) 2006-04-26
EP1613991A2 (en) 2006-01-11
CN100359367C (en) 2008-01-02
KR20050114696A (en) 2005-12-06
CA2519672C (en) 2012-11-13

Similar Documents

Publication Publication Date Title
WO2004088394A3 (en) High-speed silicon-based electro-optic modulator
US9632335B2 (en) Electro-optical modulator with a vertical capacitor structure
US9429774B2 (en) Optic modulator and method of manufacturing the same
WO2006022931A3 (en) Pn diode optical modulators fabricated in rib waveguides
KR960701479A (en) Lateral semiconductor-on-insulator (soi) semiconductor device having a buried diode
KR930001477A (en) Manufacturing method of mospat
EP0235705A3 (en) Self-aligned ultra high-frequency field-effect transistor, and method for manufacturing the same
KR950034767A (en) MIS semiconductor device
MY130168A (en) Semiconductor device and manufacturing method thereof
KR960036136A (en) Low Threshold Voltage, High Performance Junction Transistor
CA2336933A1 (en) Silicon carbide horizontal channel buffered gate semiconductor devices
KR970008332A (en) SOI transistor with a full-depletion dynamic doping profile
EP1684358A3 (en) High voltage SOI semiconductor device
CA2241765A1 (en) Solid-state relay
WO2004053939A3 (en) Integrated circuit structure with improved ldmos design
WO2002027800A3 (en) Trench dmos transistor having lightly doped source structure
EP0268426A3 (en) High speed junction field effect transistor for use in bipolar integrated circuits
DE69841384D1 (en) Power semiconductor device with semi-insulating substrate
EP1081768A3 (en) Insulated gate field-effect transistor and method of making the same
KR960026964A (en) Semiconductor device and manufacturing method thereof
KR930022601A (en) Manufacturing Method of Semiconductor Device
JPH09162422A (en) Planar semiconductor device
EP0865080A3 (en) MOS-gated semiconductor devices
WO2007146235A3 (en) Soi-based opto-electronic device including corrugated active region
KR900019128A (en) Metal Oxide Semiconductor Device and Manufacturing Method Thereof

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2519672

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 2005518912

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 20048079253

Country of ref document: CN

Ref document number: 1020057017915

Country of ref document: KR

Ref document number: 2386/CHENP/2005

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2004758207

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020057017915

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2004758207

Country of ref document: EP