WO2004092831A3 - Photoresists and methods for use thereof - Google Patents

Photoresists and methods for use thereof Download PDF

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Publication number
WO2004092831A3
WO2004092831A3 PCT/US2004/011025 US2004011025W WO2004092831A3 WO 2004092831 A3 WO2004092831 A3 WO 2004092831A3 US 2004011025 W US2004011025 W US 2004011025W WO 2004092831 A3 WO2004092831 A3 WO 2004092831A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoresists
methods
resists
imaged
chemically
Prior art date
Application number
PCT/US2004/011025
Other languages
French (fr)
Other versions
WO2004092831A2 (en
Inventor
James F Cameron
Peter Trefonas
George C Barclay
Original Assignee
Rohm & Haas Elect Mat
James F Cameron
Peter Trefonas
George C Barclay
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat, James F Cameron, Peter Trefonas, George C Barclay filed Critical Rohm & Haas Elect Mat
Publication of WO2004092831A2 publication Critical patent/WO2004092831A2/en
Publication of WO2004092831A3 publication Critical patent/WO2004092831A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

Abstract

New photoresists are provided that can be applied and imaged with reduced undesired outgassing and/or as thick coating layers. Preferred resists of the invention are chemically-amplified positive-acting resists that contain photoactive and resin components.
PCT/US2004/011025 2003-04-09 2004-04-09 Photoresists and methods for use thereof WO2004092831A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46240903P 2003-04-09 2003-04-09
US60/462,409 2003-04-09

Publications (2)

Publication Number Publication Date
WO2004092831A2 WO2004092831A2 (en) 2004-10-28
WO2004092831A3 true WO2004092831A3 (en) 2005-06-23

Family

ID=33299941

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/011025 WO2004092831A2 (en) 2003-04-09 2004-04-09 Photoresists and methods for use thereof

Country Status (3)

Country Link
US (2) US7297616B2 (en)
TW (1) TW200506516A (en)
WO (1) WO2004092831A2 (en)

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JP4149306B2 (en) * 2003-04-30 2008-09-10 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP4303044B2 (en) * 2003-06-23 2009-07-29 Ｎｅｃエレクトロニクス株式会社 Chemically amplified resist composition and method for manufacturing a semiconductor integrated circuit device using the chemically amplified resist composition
US7427463B2 (en) * 2003-10-14 2008-09-23 Intel Corporation Photoresists with reduced outgassing for extreme ultraviolet lithography
US7951522B2 (en) * 2004-12-29 2011-05-31 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
US7081327B2 (en) * 2004-12-29 2006-07-25 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
US7927778B2 (en) * 2004-12-29 2011-04-19 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
US20070020386A1 (en) * 2005-07-20 2007-01-25 Bedell Daniel W Encapsulation of chemically amplified resist template for low pH electroplating
EP2041786A2 (en) * 2006-07-10 2009-04-01 Nxp B.V. Integrated circuit, transponder, method of producing an integrated circuit and method of producing a transponder
US8448870B2 (en) * 2006-07-10 2013-05-28 Nxp B.V. Transponder and method of producing a transponder
FR2904328B1 (en) * 2006-07-27 2008-10-24 St Microelectronics Sa DEPOSITION BY ADSORPTION UNDER AN ELECTRIC FIELD
JP5101541B2 (en) * 2008-05-15 2012-12-19 信越化学工業株式会社 Pattern formation method
US10377692B2 (en) * 2009-09-09 2019-08-13 Sumitomo Chemical Company, Limited Photoresist composition
JP2011175241A (en) * 2009-12-15 2011-09-08 Rohm & Haas Electronic Materials Llc Photoresist and method for use thereof
EP2336827B1 (en) * 2009-12-15 2015-09-16 Rohm and Haas Electronic Materials LLC Method for providing an ion-implanted semiconductor substrate
US8343706B2 (en) 2010-01-25 2013-01-01 International Business Machines Corporation Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same
US20110300367A1 (en) 2010-06-07 2011-12-08 Ching-Kee Chien Optical Fiber With Photoacid Coating
JP5844613B2 (en) * 2010-11-17 2016-01-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Photosensitive copolymer and photoresist composition
EP2472327A1 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photoresists and methods for use thereof
US9322986B2 (en) 2013-06-24 2016-04-26 Corning Incorporated Optical fiber coating for short data network
US10095113B2 (en) * 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9644056B2 (en) * 2015-02-18 2017-05-09 Sumitomo Chemical Company, Limited Compound, resin and photoresist composition
US10451969B2 (en) 2015-04-24 2019-10-22 Toray Industries, Inc. Resin composition, method for manufacturing semiconductor element using the same, and semiconductor device
KR102093677B1 (en) * 2015-11-05 2020-03-26 후지필름 가부시키가이샤 Actinic ray-sensitive or radiation-sensitive resin composition, pattern formation method, and manufacturing method of electronic device
EP3497519B1 (en) * 2016-08-09 2020-11-25 Merck Patent GmbH Enviromentally stable, thick film, chemically amplified resist
JP6648726B2 (en) * 2017-03-22 2020-02-14 信越化学工業株式会社 Resist material and pattern forming method
WO2019054311A1 (en) 2017-09-13 2019-03-21 富士フイルム株式会社 Active light ray-sensitive or radiation-sensitive resin composition, resist film, method for forming pattern, and method for producing electronic device
US20200209743A1 (en) * 2018-12-31 2020-07-02 Rohm And Haas Electronic Materials Llc Composition for preparing thick film photorest, thick film photoresist, and process of preparing the same
US20200356001A1 (en) * 2019-05-10 2020-11-12 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods of forming resist patterns with such compositions

Citations (4)

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Publication number Priority date Publication date Assignee Title
US6042997A (en) * 1996-06-11 2000-03-28 Ibm Corporation Copolymers and photoresist compositions comprising copolymer resin binder component
US6352818B1 (en) * 1999-09-01 2002-03-05 Taiwan Semiconductor Manufacturing Company Photoresist development method employing multiple photoresist developer rinse
US6458430B1 (en) * 1999-12-22 2002-10-01 Axcelis Technologies, Inc. Pretreatment process for plasma immersion ion implantation
US6841338B2 (en) * 2001-08-16 2005-01-11 Samsung Electronics Co. Ltd. Photoresist composition and method of forming a photoresist pattern with a controlled remnant ratio

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US4767721A (en) * 1986-02-10 1988-08-30 Hughes Aircraft Company Double layer photoresist process for well self-align and ion implantation masking
JP3116751B2 (en) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 Radiation-sensitive resin composition
US5858623A (en) * 1997-04-07 1999-01-12 Taiwan Semiconductor Manufacturing Company Method for attenuating photoresist layer outgassing
US6136501A (en) * 1998-08-28 2000-10-24 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
EP1031878A1 (en) * 1999-02-23 2000-08-30 Shipley Company LLC Novel polymers and photoresist compositions comprising same
US6369874B1 (en) * 2000-04-18 2002-04-09 Silicon Valley Group, Inc. Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography
US6524936B2 (en) * 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
US6730452B2 (en) * 2001-01-26 2004-05-04 International Business Machines Corporation Lithographic photoresist composition and process for its use
JP4297408B2 (en) * 2001-05-11 2009-07-15 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Thick film photoresists and how to use them
US7022455B2 (en) * 2001-12-28 2006-04-04 Shipley Company, L.L.C. Photoacid-labile polymers and photoresists comprising same
US6866986B2 (en) * 2002-07-10 2005-03-15 Cypress Semiconductor Corporation Method of 193 NM photoresist stabilization by the use of ion implantation
EP1422565A3 (en) * 2002-11-20 2005-01-05 Shipley Company LLC Multilayer photoresist systems
TWI317458B (en) * 2003-03-03 2009-11-21 Rohm & Haas Elect Mat Polymers and photoresists comprising same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6042997A (en) * 1996-06-11 2000-03-28 Ibm Corporation Copolymers and photoresist compositions comprising copolymer resin binder component
US6352818B1 (en) * 1999-09-01 2002-03-05 Taiwan Semiconductor Manufacturing Company Photoresist development method employing multiple photoresist developer rinse
US6458430B1 (en) * 1999-12-22 2002-10-01 Axcelis Technologies, Inc. Pretreatment process for plasma immersion ion implantation
US6841338B2 (en) * 2001-08-16 2005-01-11 Samsung Electronics Co. Ltd. Photoresist composition and method of forming a photoresist pattern with a controlled remnant ratio

Also Published As

Publication number Publication date
US20050032373A1 (en) 2005-02-10
US20080220597A1 (en) 2008-09-11
WO2004092831A2 (en) 2004-10-28
US7297616B2 (en) 2007-11-20
TW200506516A (en) 2005-02-16

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