WO2004106582A3 - Physical vapor deposition of titanium-based films - Google Patents
Physical vapor deposition of titanium-based films Download PDFInfo
- Publication number
- WO2004106582A3 WO2004106582A3 PCT/US2004/014524 US2004014524W WO2004106582A3 WO 2004106582 A3 WO2004106582 A3 WO 2004106582A3 US 2004014524 W US2004014524 W US 2004014524W WO 2004106582 A3 WO2004106582 A3 WO 2004106582A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- titanium
- vapor deposition
- physical vapor
- based films
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04751754A EP1633902B1 (en) | 2003-05-23 | 2004-05-21 | Physical vapor deposition of titanium-based films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47337503P | 2003-05-23 | 2003-05-23 | |
US60/473,375 | 2003-05-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004106582A2 WO2004106582A2 (en) | 2004-12-09 |
WO2004106582A3 true WO2004106582A3 (en) | 2005-04-07 |
Family
ID=33490594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/014524 WO2004106582A2 (en) | 2003-05-23 | 2004-05-21 | Physical vapor deposition of titanium-based films |
Country Status (5)
Country | Link |
---|---|
US (2) | US7238628B2 (en) |
EP (1) | EP1633902B1 (en) |
CN (1) | CN1826424A (en) |
TW (1) | TWI338338B (en) |
WO (1) | WO2004106582A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8906523B2 (en) | 2008-08-11 | 2014-12-09 | Infinite Power Solutions, Inc. | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
US9334557B2 (en) | 2007-12-21 | 2016-05-10 | Sapurast Research Llc | Method for sputter targets for electrolyte films |
US9532453B2 (en) | 2009-09-01 | 2016-12-27 | Sapurast Research Llc | Printed circuit board with integrated thin film battery |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7378356B2 (en) * | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
US6884327B2 (en) | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US9793523B2 (en) | 2002-08-09 | 2017-10-17 | Sapurast Research Llc | Electrochemical apparatus with barrier layer protected substrate |
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
AU2003261463A1 (en) | 2002-08-27 | 2004-03-19 | Symmorphix, Inc. | Optically coupling into highly uniform waveguides |
US7238628B2 (en) | 2003-05-23 | 2007-07-03 | Symmorphix, Inc. | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
US7323423B2 (en) * | 2004-06-30 | 2008-01-29 | Intel Corporation | Forming high-k dielectric layers on smooth substrates |
KR100590592B1 (en) * | 2004-08-20 | 2006-06-19 | 삼성전자주식회사 | Capacitor with dielectric layer decreasing leakage current and method of manufacturing the same |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
KR101021536B1 (en) | 2004-12-08 | 2011-03-16 | 섬모픽스, 인코포레이티드 | Deposition of ?????? |
US20070003813A1 (en) * | 2005-06-30 | 2007-01-04 | General Motors Corporation | Stable conductive and hydrophilic fuel cell contact element |
US7838133B2 (en) | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
KR100678640B1 (en) * | 2005-11-12 | 2007-02-05 | 삼성전자주식회사 | Semiconductor integrated circuit device having mim capacitor and fabrication method thereof |
AT9543U1 (en) * | 2006-07-07 | 2007-11-15 | Plansee Se | METHOD FOR PRODUCING AN ELECTRICALLY CONDUCTIVE LAYER |
KR20090069323A (en) | 2006-09-29 | 2009-06-30 | 인피니트 파워 솔루션스, 인크. | Masking of and material constraint for depositing battery layers on flexible substrates |
US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
US20080112879A1 (en) * | 2006-11-15 | 2008-05-15 | Mccracken Colin G | Production of high-purity titanium monoxide and capacitor production therefrom |
US20080253958A1 (en) * | 2006-11-15 | 2008-10-16 | Mccracken Colin G | Production of high-purity titanium monoxide and capacitor production therefrom |
CN100465332C (en) * | 2006-12-14 | 2009-03-04 | 上海交通大学 | Process of preparing anatase crystal phase titanium dioxide film at low temp. |
US8221690B2 (en) * | 2007-10-30 | 2012-07-17 | The Invention Science Fund I, Llc | Systems and devices that utilize photolyzable nitric oxide donors |
US20090110933A1 (en) * | 2007-10-30 | 2009-04-30 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Systems and devices related to nitric oxide releasing materials |
US7862598B2 (en) * | 2007-10-30 | 2011-01-04 | The Invention Science Fund I, Llc | Devices and systems that deliver nitric oxide |
US20090112197A1 (en) | 2007-10-30 | 2009-04-30 | Searete Llc | Devices configured to facilitate release of nitric oxide |
US8642093B2 (en) * | 2007-10-30 | 2014-02-04 | The Invention Science Fund I, Llc | Methods and systems for use of photolyzable nitric oxide donors |
US20110190604A1 (en) * | 2006-12-22 | 2011-08-04 | Hyde Roderick A | Nitric oxide sensors and systems |
US20090112055A1 (en) * | 2007-10-30 | 2009-04-30 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Sleeves configured to facilitate release of nitric oxide |
US20090112193A1 (en) * | 2007-10-30 | 2009-04-30 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Systems and devices that utilize photolyzable nitric oxide donors |
US8877508B2 (en) * | 2007-10-30 | 2014-11-04 | The Invention Science Fund I, Llc | Devices and systems that deliver nitric oxide |
US8349262B2 (en) * | 2007-10-30 | 2013-01-08 | The Invention Science Fund I, Llc | Nitric oxide permeable housings |
US8980332B2 (en) | 2007-10-30 | 2015-03-17 | The Invention Science Fund I, Llc | Methods and systems for use of photolyzable nitric oxide donors |
US7897399B2 (en) | 2007-10-30 | 2011-03-01 | The Invention Science Fund I, Llc | Nitric oxide sensors and systems |
US10080823B2 (en) | 2007-10-30 | 2018-09-25 | Gearbox Llc | Substrates for nitric oxide releasing devices |
US9039871B2 (en) | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
US8133359B2 (en) | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
CN101911367B (en) | 2008-01-11 | 2015-02-25 | 无穷动力解决方案股份有限公司 | Thin film encapsulation for thin film batteries and other devices |
JP5173512B2 (en) * | 2008-03-25 | 2013-04-03 | 財団法人神奈川科学技術アカデミー | Conductor and manufacturing method thereof |
CN101983469B (en) | 2008-04-02 | 2014-06-04 | 无穷动力解决方案股份有限公司 | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
US20090259217A1 (en) * | 2008-04-09 | 2009-10-15 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Methods and systems associated with delivery of one or more agents to an individual |
US20090259112A1 (en) * | 2008-04-09 | 2009-10-15 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Sensors |
WO2009131902A2 (en) * | 2008-04-23 | 2009-10-29 | Intermolecular, Inc. | Yttrium and titanium high-k dielectric films |
KR101172457B1 (en) | 2008-04-28 | 2012-08-09 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Method of forming a nanocluster-comprising dielectric layer and device comprising such a layer |
US8202820B2 (en) * | 2008-08-26 | 2012-06-19 | Northwestern University | Non-stoichiometric mixed-phase titania photocatalyst |
US8260203B2 (en) | 2008-09-12 | 2012-09-04 | Infinite Power Solutions, Inc. | Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof |
US8508193B2 (en) | 2008-10-08 | 2013-08-13 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
US20110005920A1 (en) * | 2009-07-13 | 2011-01-13 | Seagate Technology Llc | Low Temperature Deposition of Amorphous Thin Films |
CN102947976B (en) | 2010-06-07 | 2018-03-16 | 萨普拉斯特研究有限责任公司 | Chargeable, highdensity electrochemical apparatus |
US8420208B2 (en) * | 2010-08-11 | 2013-04-16 | Micron Technology, Inc. | High-k dielectric material and methods of forming the high-k dielectric material |
US9309589B2 (en) | 2011-06-21 | 2016-04-12 | Ppg Industries Ohio, Inc. | Outboard durable transparent conductive coating on aircraft canopy |
JP5912045B2 (en) * | 2012-01-18 | 2016-04-27 | 日東電工株式会社 | Translucent shading tape |
US8979885B2 (en) | 2012-02-24 | 2015-03-17 | Elwha Llc | Devices, systems, and methods to control stomach volume |
US9589106B2 (en) | 2012-05-04 | 2017-03-07 | Elwha Llc | Devices, systems, and methods for automated data collection |
US8741712B2 (en) * | 2012-09-18 | 2014-06-03 | Intermolecular, Inc. | Leakage reduction in DRAM MIM capacitors |
CA2872816C (en) | 2012-09-26 | 2015-08-04 | Ledtech International Inc. | Multilayer optical interference filter |
US8956730B2 (en) * | 2012-09-28 | 2015-02-17 | Ppg Industries Ohio, Inc. | Conductive multilayer stack, coated substrates including the same, and methods of making the same |
EP2917929A4 (en) | 2012-11-12 | 2016-07-06 | Demaray Llc | Adiabatic planar waveguide coupler transformer |
US10141073B2 (en) | 2012-12-19 | 2018-11-27 | Elwha Llc | Systems and methods for controlling acquisition of sensor information |
US9375145B2 (en) | 2012-12-19 | 2016-06-28 | Elwha Llc | Systems and methods for controlling acquisition of sensor information |
KR102052075B1 (en) * | 2013-03-28 | 2020-01-09 | 삼성디스플레이 주식회사 | Deposition apparatus, method for forming thin film using the same, organic light emitting display apparatus and method for manufacturing the same |
US10229607B2 (en) | 2013-04-30 | 2019-03-12 | Elwha Llc | Systems and methods for competency training and use authorization for dispensing an agent |
US9390457B2 (en) | 2013-04-30 | 2016-07-12 | Elwha Llc | Devices and methods for competency training and use authorization for dispensing an agent |
CN103397302B (en) * | 2013-07-01 | 2015-06-17 | 复旦大学 | Preparation method of up-conversion luminescence Er / Yb co-doped TiO2 thin film |
CN103367329B (en) * | 2013-07-23 | 2016-03-30 | 上海华力微电子有限公司 | For testing the semiconductor structure of MIM capacitor |
US9864842B2 (en) | 2013-11-14 | 2018-01-09 | Elwha Llc | Devices, systems, and methods for automated medical product or service delivery |
US10289806B2 (en) | 2013-11-14 | 2019-05-14 | Elwha Llc | Devices, systems, and methods for automated medical product or service delivery |
CN103962125A (en) * | 2014-01-16 | 2014-08-06 | 代思炜 | Energy storage type photocatalyst preparation |
TW201634886A (en) | 2015-03-23 | 2016-10-01 | Zun-Tian Lin | Improved structure of heater |
WO2017127995A1 (en) * | 2016-01-25 | 2017-08-03 | Schott Glass Technologies (Suzhou) Co. Ltd. | Article with high capacity per area and use of such article in finger-print sensors |
US10818909B2 (en) | 2016-05-09 | 2020-10-27 | Demaray, Llc | Energy storage device with a first metal layer formed from a precursor layer upon charge and diffused into a cathode during discharge |
US20210381125A1 (en) * | 2019-03-08 | 2021-12-09 | Seagate Technology Llc | Epitaxial directed ald crystal growth |
FR3130851A1 (en) * | 2021-12-21 | 2023-06-23 | Societe Des Ceramiques Techniques | Process for producing a sub-stoichiometric oxygen layer of an oxide of titanium, vanadium, tungsten or molybdenum |
WO2023230111A1 (en) * | 2022-05-26 | 2023-11-30 | Intermolecular Inc. | Oxide buffer layer to promote tio2 crystallinity and increase tio2 refractive index for optical applications |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3309302A (en) * | 1963-10-07 | 1967-03-14 | Varian Associates | Method of preparing an electron tube including sputtering a suboxide of titanium on dielectric components thereof |
JPH07233469A (en) * | 1994-02-22 | 1995-09-05 | Asahi Glass Co Ltd | Target, its production and production of high-refractive-index film |
US5942089A (en) * | 1996-04-22 | 1999-08-24 | Northwestern University | Method for sputtering compounds on a substrate |
EP1068899A1 (en) * | 1999-07-14 | 2001-01-17 | Nippon Sheet Glass Co., Ltd. | Multilayer structure and process for producing the same |
US20010041460A1 (en) * | 2000-04-14 | 2001-11-15 | Wiggins Claire Louise | Method of depositing dielectric |
US20030077914A1 (en) * | 2001-10-24 | 2003-04-24 | Applied Materials, Inc. | Method and apparatus for forming an anti-reflective coating on a substrate |
Family Cites Families (197)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3616403A (en) | 1968-10-25 | 1971-10-26 | Ibm | Prevention of inversion of p-type semiconductor material during rf sputtering of quartz |
GB1365492A (en) | 1971-02-05 | 1974-09-04 | Triplex Safety Glass Co | Metal oxide films |
US3850604A (en) | 1972-12-11 | 1974-11-26 | Gte Laboratories Inc | Preparation of chalcogenide glass sputtering targets |
US4111523A (en) | 1973-07-23 | 1978-09-05 | Bell Telephone Laboratories, Incorporated | Thin film optical waveguide |
US4099091A (en) * | 1976-07-28 | 1978-07-04 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent panel including an electrically conductive layer between two electroluminescent layers |
US4082569A (en) | 1977-02-22 | 1978-04-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Solar cell collector |
US4437966A (en) | 1982-09-30 | 1984-03-20 | Gte Products Corporation | Sputtering cathode apparatus |
DE3345659A1 (en) | 1983-06-16 | 1984-12-20 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | ZIRCONIUM DIOXIDE CERAMIC BODY (ZRO (DOWN ARROW) 2 (DOWN ARROW)) AND METHOD FOR PRODUCING THE SAME |
AU573631B2 (en) | 1983-10-17 | 1988-06-16 | Tosoh Corporation | High strength zirconia type sintered body |
DE3417732A1 (en) | 1984-05-12 | 1986-07-10 | Leybold-Heraeus GmbH, 5000 Köln | METHOD FOR APPLYING SILICON-CONTAINING LAYERS TO SUBSTRATES BY CATODIZING AND SPRAYING CATODE FOR CARRYING OUT THE METHOD |
GB8414878D0 (en) | 1984-06-11 | 1984-07-18 | Gen Electric Co Plc | Integrated optical waveguides |
US4785459A (en) | 1985-05-01 | 1988-11-15 | Baer Thomas M | High efficiency mode matched solid state laser with transverse pumping |
KR910000273B1 (en) * | 1985-05-09 | 1991-01-23 | 마쯔시다덴기산교 가부시기가이샤 | Plasma processor |
US4710940A (en) | 1985-10-01 | 1987-12-01 | California Institute Of Technology | Method and apparatus for efficient operation of optically pumped laser |
US5173271A (en) | 1985-12-04 | 1992-12-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
US5296089A (en) | 1985-12-04 | 1994-03-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
US4915810A (en) | 1988-04-25 | 1990-04-10 | Unisys Corporation | Target source for ion beam sputter deposition |
JP2501118B2 (en) | 1988-06-17 | 1996-05-29 | 忠弘 大見 | Method for manufacturing semiconductor device |
US5792550A (en) | 1989-10-24 | 1998-08-11 | Flex Products, Inc. | Barrier film having high colorless transparency and method |
JP2758948B2 (en) | 1989-12-15 | 1998-05-28 | キヤノン株式会社 | Thin film formation method |
DE4022090A1 (en) | 1989-12-18 | 1991-06-20 | Forschungszentrum Juelich Gmbh | ELECTRO-OPTICAL COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
US5252194A (en) | 1990-01-26 | 1993-10-12 | Varian Associates, Inc. | Rotating sputtering apparatus for selected erosion |
US5085904A (en) | 1990-04-20 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Barrier materials useful for packaging |
US5306569A (en) | 1990-06-15 | 1994-04-26 | Hitachi Metals, Ltd. | Titanium-tungsten target material and manufacturing method thereof |
JP2755471B2 (en) | 1990-06-29 | 1998-05-20 | 日立電線株式会社 | Rare earth element doped optical waveguide and method of manufacturing the same |
US5225288A (en) | 1990-08-10 | 1993-07-06 | E. I. Du Pont De Nemours And Company | Solvent blockers and multilayer barrier coatings for thin films |
US5645626A (en) | 1990-08-10 | 1997-07-08 | Bend Research, Inc. | Composite hydrogen separation element and module |
US5110696A (en) | 1990-11-09 | 1992-05-05 | Bell Communications Research | Rechargeable lithiated thin film intercalation electrode battery |
NL9002844A (en) | 1990-12-21 | 1992-07-16 | Philips Nv | SYSTEM INCLUDING A DEVICE AND A CASSETTE, AND A DEVICE AND A CASSETTE SUITABLE FOR USE IN SUCH A SYSTEM. |
US5200029A (en) | 1991-04-25 | 1993-04-06 | At&T Bell Laboratories | Method of making a planar optical amplifier |
US5119460A (en) | 1991-04-25 | 1992-06-02 | At&T Bell Laboratories | Erbium-doped planar optical device |
US5107538A (en) | 1991-06-06 | 1992-04-21 | At&T Bell Laboratories | Optical waveguide system comprising a rare-earth Si-based optical device |
US5196041A (en) | 1991-09-17 | 1993-03-23 | The Charles Stark Draper Laboratory, Inc. | Method of forming an optical channel waveguide by gettering |
US5355089A (en) | 1992-07-22 | 1994-10-11 | Duracell Inc. | Moisture barrier for battery with electrochemical tester |
JP2755844B2 (en) | 1991-09-30 | 1998-05-25 | シャープ株式会社 | Plastic substrate liquid crystal display |
US5702829A (en) | 1991-10-14 | 1997-12-30 | Commissariat A L'energie Atomique | Multilayer material, anti-erosion and anti-abrasion coating incorporating said multilayer material |
DK0546709T3 (en) | 1991-12-11 | 1997-10-13 | Mobil Oil Corp | Strong movie barrier |
JPH06145975A (en) | 1992-03-20 | 1994-05-27 | Komag Inc | Method of spattering carbon film and its product |
US5287427A (en) | 1992-05-05 | 1994-02-15 | At&T Bell Laboratories | Method of making an article comprising an optical component, and article comprising the component |
US5338625A (en) | 1992-07-29 | 1994-08-16 | Martin Marietta Energy Systems, Inc. | Thin film battery and method for making same |
JP3214910B2 (en) | 1992-08-18 | 2001-10-02 | 富士通株式会社 | Manufacturing method of planar waveguide optical amplifier |
US5538796A (en) | 1992-10-13 | 1996-07-23 | General Electric Company | Thermal barrier coating system having no bond coat |
JP3231900B2 (en) | 1992-10-28 | 2001-11-26 | 株式会社アルバック | Film forming equipment |
US5789071A (en) | 1992-11-09 | 1998-08-04 | Northwestern University | Multilayer oxide coatings |
JPH06158308A (en) | 1992-11-24 | 1994-06-07 | Hitachi Metals Ltd | Target for sputtering for indium-tin oxide film and its production |
US6022458A (en) * | 1992-12-07 | 2000-02-08 | Canon Kabushiki Kaisha | Method of production of a semiconductor substrate |
AU669754B2 (en) | 1992-12-18 | 1996-06-20 | Becton Dickinson & Company | Barrier coating |
US5303319A (en) | 1992-12-28 | 1994-04-12 | Honeywell Inc. | Ion-beam deposited multilayer waveguides and resonators |
US5718813A (en) | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
US5427669A (en) | 1992-12-30 | 1995-06-27 | Advanced Energy Industries, Inc. | Thin film DC plasma processing system |
JPH06279185A (en) | 1993-03-25 | 1994-10-04 | Canon Inc | Forming method of diamond crystal and diamond crystal film |
US5613995A (en) | 1993-04-23 | 1997-03-25 | Lucent Technologies Inc. | Method for making planar optical waveguides |
SG46607A1 (en) | 1993-07-28 | 1998-02-20 | Asahi Glass Co Ltd | Method of an apparatus for sputtering |
US5499207A (en) | 1993-08-06 | 1996-03-12 | Hitachi, Ltd. | Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same |
JP2642849B2 (en) | 1993-08-24 | 1997-08-20 | 株式会社フロンテック | Thin film manufacturing method and manufacturing apparatus |
US5478456A (en) | 1993-10-01 | 1995-12-26 | Minnesota Mining And Manufacturing Company | Sputtering target |
DE69430230T2 (en) | 1993-10-14 | 2002-10-31 | Neuralsystems Corp | Method and device for producing a single-crystal thin film |
US5738731A (en) | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
US5433835B1 (en) | 1993-11-24 | 1997-05-20 | Applied Materials Inc | Sputtering device and target with cover to hold cooling fluid |
US5487822A (en) | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
US5654984A (en) | 1993-12-03 | 1997-08-05 | Silicon Systems, Inc. | Signal modulation across capacitors |
US5569520A (en) | 1994-01-12 | 1996-10-29 | Martin Marietta Energy Systems, Inc. | Rechargeable lithium battery for use in applications requiring a low to high power output |
US5561004A (en) | 1994-02-25 | 1996-10-01 | Bates; John B. | Packaging material for thin film lithium batteries |
US5475528A (en) | 1994-03-25 | 1995-12-12 | Corning Incorporated | Optical signal amplifier glasses |
JP3947575B2 (en) | 1994-06-10 | 2007-07-25 | Hoya株式会社 | Conductive oxide and electrode using the same |
US5472795A (en) | 1994-06-27 | 1995-12-05 | Board Of Regents Of The University Of The University Of Wisconsin System, On Behalf Of The University Of Wisconsin-Milwaukee | Multilayer nanolaminates containing polycrystalline zirconia |
US5457569A (en) | 1994-06-30 | 1995-10-10 | At&T Ipm Corp. | Semiconductor amplifier or laser having integrated lens |
WO1996000996A1 (en) | 1994-06-30 | 1996-01-11 | The Whitaker Corporation | Planar hybrid optical amplifier |
JP3407409B2 (en) | 1994-07-27 | 2003-05-19 | 富士通株式会社 | Manufacturing method of high dielectric constant thin film |
US5483613A (en) | 1994-08-16 | 1996-01-09 | At&T Corp. | Optical device with substrate and waveguide structure having thermal matching interfaces |
US5909346A (en) | 1994-08-26 | 1999-06-01 | Aiwa Research & Development, Inc. | Thin magnetic film including multiple geometry gap structures on a common substrate |
CN1075243C (en) * | 1994-12-28 | 2001-11-21 | 松下电器产业株式会社 | Capacity element of integrated circuit and manufacturing method thereof |
US6204111B1 (en) * | 1994-12-28 | 2001-03-20 | Matsushita Electronics Corporation | Fabrication method of capacitor for integrated circuit |
US5555342A (en) | 1995-01-17 | 1996-09-10 | Lucent Technologies Inc. | Planar waveguide and a process for its fabrication |
US5607789A (en) | 1995-01-23 | 1997-03-04 | Duracell Inc. | Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same |
US6444750B1 (en) | 1995-03-06 | 2002-09-03 | Exxonmobil Oil Corp. | PVOH-based coating solutions |
ES2202439T3 (en) | 1995-04-25 | 2004-04-01 | Von Ardenne Anlagentechnik Gmbh | SPRAY SYSTEM THAT USES A ROTARY CYLINDER MAGNETRON ELECTRICALLY POWERED USING ALTERNATE CURRENT. |
US5771562A (en) | 1995-05-02 | 1998-06-30 | Motorola, Inc. | Passivation of organic devices |
KR100342189B1 (en) | 1995-07-12 | 2002-11-30 | 삼성전자 주식회사 | Method for producing rare earth elements-added optical fiber by using volatile composite |
ATE204029T1 (en) | 1995-08-18 | 2001-08-15 | Heraeus Gmbh W C | TARGET FOR CATHODE SPUTTING AND METHOD FOR PRODUCING SUCH A TARGET |
US5563979A (en) | 1995-08-31 | 1996-10-08 | Lucent Technologies Inc. | Erbium-doped planar optical device |
US5689522A (en) | 1995-10-02 | 1997-11-18 | The Regents Of The University Of California | High efficiency 2 micrometer laser utilizing wing-pumped Tm3+ and a laser diode array end-pumping architecture |
US5719976A (en) | 1995-10-24 | 1998-02-17 | Lucent Technologies, Inc. | Optimized waveguide structure |
JP3298799B2 (en) | 1995-11-22 | 2002-07-08 | ルーセント テクノロジーズ インコーポレイテッド | Cladding pump fiber and its manufacturing method |
US5686360A (en) | 1995-11-30 | 1997-11-11 | Motorola | Passivation of organic devices |
US5811177A (en) | 1995-11-30 | 1998-09-22 | Motorola, Inc. | Passivation of electroluminescent organic devices |
US5955161A (en) | 1996-01-30 | 1999-09-21 | Becton Dickinson And Company | Blood collection tube assembly |
US5930584A (en) | 1996-04-10 | 1999-07-27 | United Microelectronics Corp. | Process for fabricating low leakage current electrode for LPCVD titanium oxide films |
JP3346167B2 (en) * | 1996-05-27 | 2002-11-18 | 三菱マテリアル株式会社 | High-strength dielectric sputtering target, method for producing the same, and film |
JP3862760B2 (en) | 1996-06-12 | 2006-12-27 | トレスパファン、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング | Transparent barrier coating showing low film interference |
US5731661A (en) | 1996-07-15 | 1998-03-24 | Motorola, Inc. | Passivation of electroluminescent organic devices |
US5855744A (en) | 1996-07-19 | 1999-01-05 | Applied Komatsu Technology, Inc. | Non-planar magnet tracking during magnetron sputtering |
US5693956A (en) | 1996-07-29 | 1997-12-02 | Motorola | Inverted oleds on hard plastic substrate |
JP3631341B2 (en) | 1996-10-18 | 2005-03-23 | Tdk株式会社 | Multilayer composite functional element and method for manufacturing the same |
US5841931A (en) | 1996-11-26 | 1998-11-24 | Massachusetts Institute Of Technology | Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby |
US6144795A (en) * | 1996-12-13 | 2000-11-07 | Corning Incorporated | Hybrid organic-inorganic planar optical waveguide device |
JPH10195649A (en) | 1996-12-27 | 1998-07-28 | Sony Corp | Magnetron sputter device and manufacture of semiconductor device |
US5944964A (en) | 1997-02-13 | 1999-08-31 | Optical Coating Laboratory, Inc. | Methods and apparatus for preparing low net stress multilayer thin film coatings |
US5847865A (en) | 1997-02-18 | 1998-12-08 | Regents Of The University Of Minnesota | Waveguide optical amplifier |
US5952778A (en) | 1997-03-18 | 1999-09-14 | International Business Machines Corporation | Encapsulated organic light emitting device |
JPH10265948A (en) * | 1997-03-25 | 1998-10-06 | Rohm Co Ltd | Substrate for semiconductor device and manufacture of the same |
ES2156334T3 (en) | 1997-03-27 | 2001-06-16 | Tno | FLAT WAVES GUIDE DOPED WITH ERBIO. |
US6106933A (en) | 1997-04-03 | 2000-08-22 | Toray Industries, Inc. | Transparent gas barrier biaxially oriented polypropylene film, a laminate film, and a production method thereof |
US6242132B1 (en) | 1997-04-16 | 2001-06-05 | Ut-Battelle, Llc | Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery |
US5948215A (en) | 1997-04-21 | 1999-09-07 | Tokyo Electron Limited | Method and apparatus for ionized sputtering |
JP3290375B2 (en) * | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | Organic electroluminescent device |
US5830330A (en) | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
US6000603A (en) | 1997-05-23 | 1999-12-14 | 3M Innovative Properties Company | Patterned array of metal balls and methods of making |
US5977582A (en) | 1997-05-23 | 1999-11-02 | Lucent Technologies Inc. | Capacitor comprising improved TaOx -based dielectric |
US6051114A (en) * | 1997-06-23 | 2000-04-18 | Applied Materials, Inc. | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition |
US5831262A (en) | 1997-06-27 | 1998-11-03 | Lucent Technologies Inc. | Article comprising an optical fiber attached to a micromechanical device |
JP3813740B2 (en) | 1997-07-11 | 2006-08-23 | Tdk株式会社 | Substrates for electronic devices |
US6041734A (en) | 1997-12-01 | 2000-03-28 | Applied Materials, Inc. | Use of an asymmetric waveform to control ion bombardment during substrate processing |
US6052397A (en) * | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
US5976327A (en) * | 1997-12-12 | 1999-11-02 | Applied Materials, Inc. | Step coverage and overhang improvement by pedestal bias voltage modulation |
WO1999041434A2 (en) | 1998-02-12 | 1999-08-19 | Acm Research, Inc. | Plating apparatus and method |
US6004660A (en) | 1998-03-12 | 1999-12-21 | E.I. Du Pont De Nemours And Company | Oxygen barrier composite film structure |
US6563998B1 (en) * | 1999-04-15 | 2003-05-13 | John Farah | Polished polymide substrate |
US20020014406A1 (en) * | 1998-05-21 | 2002-02-07 | Hiroshi Takashima | Aluminum target material for sputtering and method for producing same |
JP3126698B2 (en) | 1998-06-02 | 2001-01-22 | 富士通株式会社 | Sputter film forming method, sputter film forming apparatus, and semiconductor device manufacturing method |
US6093944A (en) * | 1998-06-04 | 2000-07-25 | Lucent Technologies Inc. | Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same |
KR100287176B1 (en) | 1998-06-25 | 2001-04-16 | 윤종용 | Method for forming a capacitor using high temperature oxidation |
US6058233A (en) * | 1998-06-30 | 2000-05-02 | Lucent Technologies Inc. | Waveguide array with improved efficiency for wavelength routers and star couplers in integrated optics |
DE19831719A1 (en) * | 1998-07-15 | 2000-01-20 | Alcatel Sa | Process for the production of planar waveguide structures and waveguide structure |
US6358810B1 (en) * | 1998-07-28 | 2002-03-19 | Applied Materials, Inc. | Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes |
US6146225A (en) | 1998-07-30 | 2000-11-14 | Agilent Technologies, Inc. | Transparent, flexible permeability barrier for organic electroluminescent devices |
US6236793B1 (en) * | 1998-09-23 | 2001-05-22 | Molecular Optoelectronics Corporation | Optical channel waveguide amplifier |
KR100282487B1 (en) | 1998-10-19 | 2001-02-15 | 윤종용 | Cell Capacitor Using High-Dielectric Multilayer Film and Its Manufacturing Method |
US6117279A (en) * | 1998-11-12 | 2000-09-12 | Tokyo Electron Limited | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition |
EP1052718B1 (en) * | 1998-12-03 | 2007-08-01 | Sumitomo Electric Industries, Ltd. | Lithium storage battery |
US6268695B1 (en) * | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
WO2000036665A1 (en) | 1998-12-16 | 2000-06-22 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
US6379835B1 (en) * | 1999-01-12 | 2002-04-30 | Morgan Adhesives Company | Method of making a thin film battery |
US6290822B1 (en) | 1999-01-26 | 2001-09-18 | Agere Systems Guardian Corp. | Sputtering method for forming dielectric films |
US6306265B1 (en) | 1999-02-12 | 2001-10-23 | Applied Materials, Inc. | High-density plasma for ionized metal deposition capable of exciting a plasma wave |
US6210544B1 (en) * | 1999-03-08 | 2001-04-03 | Alps Electric Co., Ltd. | Magnetic film forming method |
US6280875B1 (en) | 1999-03-24 | 2001-08-28 | Teledyne Technologies Incorporated | Rechargeable battery structure with metal substrate |
US6168884B1 (en) * | 1999-04-02 | 2001-01-02 | Lockheed Martin Energy Research Corporation | Battery with an in-situ activation plated lithium anode |
US6242129B1 (en) | 1999-04-02 | 2001-06-05 | Excellatron Solid State, Llc | Thin lithium film battery |
US6281142B1 (en) | 1999-06-04 | 2001-08-28 | Micron Technology, Inc. | Dielectric cure for reducing oxygen vacancies |
US6046081A (en) | 1999-06-10 | 2000-04-04 | United Microelectronics Corp. | Method for forming dielectric layer of capacitor |
JP2001020065A (en) * | 1999-07-07 | 2001-01-23 | Hitachi Metals Ltd | Target for sputtering, its production and high melting point metal powder material |
US6290821B1 (en) | 1999-07-15 | 2001-09-18 | Seagate Technology Llc | Sputter deposition utilizing pulsed cathode and substrate bias power |
US6537428B1 (en) * | 1999-09-02 | 2003-03-25 | Veeco Instruments, Inc. | Stable high rate reactive sputtering |
DE19948839A1 (en) | 1999-10-11 | 2001-04-12 | Bps Alzenau Gmbh | Conductive transparent layers and processes for their manufacture |
US6413645B1 (en) | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
US6350353B2 (en) * | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
US6344419B1 (en) * | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
US6576546B2 (en) | 1999-12-22 | 2003-06-10 | Texas Instruments Incorporated | Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications |
US6534809B2 (en) | 1999-12-22 | 2003-03-18 | Agilent Technologies, Inc. | Hardmask designs for dry etching FeRAM capacitor stacks |
US6451177B1 (en) | 2000-01-21 | 2002-09-17 | Applied Materials, Inc. | Vault shaped target and magnetron operable in two sputtering modes |
US6627056B2 (en) | 2000-02-16 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for ionized plasma deposition |
TW584905B (en) * | 2000-02-25 | 2004-04-21 | Tokyo Electron Ltd | Method and apparatus for depositing films |
AU2001250957A1 (en) * | 2000-03-24 | 2001-10-08 | Cymbet Corporation | Integrated capacitor-like battery and associated method |
WO2001082297A1 (en) | 2000-04-20 | 2001-11-01 | Koninklijke Philips Electronics N.V. | Optical recording medium and use of such optical recording medium |
US6365319B1 (en) * | 2000-04-20 | 2002-04-02 | Eastman Kodak Company | Self-contained imaging media comprising opaque laminated support |
KR100341407B1 (en) * | 2000-05-01 | 2002-06-22 | 윤덕용 | A Crystall ization method of lithium transition metal oxide thin films by plasma treatm ent |
US6423776B1 (en) | 2000-05-02 | 2002-07-23 | Honeywell International Inc. | Oxygen scavenging high barrier polyamide compositions for packaging applications |
US6261917B1 (en) | 2000-05-09 | 2001-07-17 | Chartered Semiconductor Manufacturing Ltd. | High-K MOM capacitor |
DE10023459A1 (en) | 2000-05-12 | 2001-11-15 | Balzers Process Systems Gmbh | Depositing transparent conducting indium-tin oxide layers on substrate used in the production of transparent conducting electrodes in organic LED displays comprises using combined HF/DC sputtering of indium-tin oxide target |
EP1160900A3 (en) * | 2000-05-26 | 2007-12-12 | Kabushiki Kaisha Riken | Embossed current collector separator for electrochemical fuel cell |
US6363662B1 (en) * | 2000-06-20 | 2002-04-02 | Joseph R. Coates | Combined gutter guard and concealed decorative light storage compartment device |
US6506289B2 (en) * | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
US6632563B1 (en) | 2000-09-07 | 2003-10-14 | Front Edge Technology, Inc. | Thin film battery and method of manufacture |
DE10165080B4 (en) * | 2000-09-20 | 2015-05-13 | Hitachi Metals, Ltd. | Silicon nitride powder and sintered body and method of making the same and printed circuit board therewith |
US6372098B1 (en) | 2000-09-28 | 2002-04-16 | The Boc Group, Inc. | High target utilization magnet array and associated methods |
US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
US6488822B1 (en) | 2000-10-20 | 2002-12-03 | Veecoleve, Inc. | Segmented-target ionized physical-vapor deposition apparatus and method of operation |
US6413382B1 (en) | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
JP4461656B2 (en) * | 2000-12-07 | 2010-05-12 | セイコーエプソン株式会社 | Photoelectric conversion element |
US6533907B2 (en) * | 2001-01-19 | 2003-03-18 | Symmorphix, Inc. | Method of producing amorphous silicon for hard mask and waveguide applications |
US6673716B1 (en) * | 2001-01-30 | 2004-01-06 | Novellus Systems, Inc. | Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques |
US6558836B1 (en) | 2001-02-08 | 2003-05-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Structure of thin-film lithium microbatteries |
JP2002258037A (en) | 2001-03-05 | 2002-09-11 | Alps Electric Co Ltd | Optical filter having multilayered film and method of manufacturing the same |
US7164206B2 (en) | 2001-03-28 | 2007-01-16 | Intel Corporation | Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layer |
US6743488B2 (en) * | 2001-05-09 | 2004-06-01 | Cpfilms Inc. | Transparent conductive stratiform coating of indium tin oxide |
US7469558B2 (en) * | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
WO2003021606A1 (en) * | 2001-08-28 | 2003-03-13 | Tdk Corporation | Composition for thin-film capacitive device, high-dielectric constant insulating film, thin-film capacitive device, and thin-film mulitlayer ceramic capacitor |
US7115516B2 (en) * | 2001-10-09 | 2006-10-03 | Applied Materials, Inc. | Method of depositing a material layer |
US6666982B2 (en) * | 2001-10-22 | 2003-12-23 | Tokyo Electron Limited | Protection of dielectric window in inductively coupled plasma generation |
US7404877B2 (en) | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
US20030097858A1 (en) * | 2001-11-26 | 2003-05-29 | Christof Strohhofer | Silver sensitized erbium ion doped planar waveguide amplifier |
US6683749B2 (en) * | 2001-12-19 | 2004-01-27 | Storage Technology Corporation | Magnetic transducer having inverted write element with zero delta in pole tip width |
US20030143853A1 (en) | 2002-01-31 | 2003-07-31 | Celii Francis G. | FeRAM capacitor stack etch |
US6884327B2 (en) * | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US7378356B2 (en) | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
TWI283031B (en) | 2002-03-25 | 2007-06-21 | Epistar Corp | Method for integrating compound semiconductor with substrate of high thermal conductivity |
KR100507142B1 (en) | 2002-05-13 | 2005-08-09 | 현대자동차주식회사 | Flywheel for improving radiant heat and strength function |
US7083270B2 (en) | 2002-06-20 | 2006-08-01 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus |
US6818356B1 (en) | 2002-07-09 | 2004-11-16 | Oak Ridge Micro-Energy, Inc. | Thin film battery and electrolyte therefor |
AU2003261463A1 (en) | 2002-08-27 | 2004-03-19 | Symmorphix, Inc. | Optically coupling into highly uniform waveguides |
KR100691168B1 (en) * | 2003-02-27 | 2007-03-09 | 섬모픽스, 인코포레이티드 | Dielectric barrier layer films |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
US7238628B2 (en) | 2003-05-23 | 2007-07-03 | Symmorphix, Inc. | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides |
KR101021536B1 (en) | 2004-12-08 | 2011-03-16 | 섬모픽스, 인코포레이티드 | Deposition of ?????? |
US7838133B2 (en) | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
-
2004
- 2004-05-20 US US10/851,542 patent/US7238628B2/en not_active Expired - Fee Related
- 2004-05-21 EP EP04751754A patent/EP1633902B1/en not_active Not-in-force
- 2004-05-21 TW TW093114518A patent/TWI338338B/en not_active IP Right Cessation
- 2004-05-21 WO PCT/US2004/014524 patent/WO2004106582A2/en active Application Filing
- 2004-05-21 CN CNA2004800210786A patent/CN1826424A/en active Pending
-
2007
- 2007-03-22 US US11/726,972 patent/US8076005B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3309302A (en) * | 1963-10-07 | 1967-03-14 | Varian Associates | Method of preparing an electron tube including sputtering a suboxide of titanium on dielectric components thereof |
JPH07233469A (en) * | 1994-02-22 | 1995-09-05 | Asahi Glass Co Ltd | Target, its production and production of high-refractive-index film |
US5942089A (en) * | 1996-04-22 | 1999-08-24 | Northwestern University | Method for sputtering compounds on a substrate |
EP1068899A1 (en) * | 1999-07-14 | 2001-01-17 | Nippon Sheet Glass Co., Ltd. | Multilayer structure and process for producing the same |
US20010041460A1 (en) * | 2000-04-14 | 2001-11-15 | Wiggins Claire Louise | Method of depositing dielectric |
US20030077914A1 (en) * | 2001-10-24 | 2003-04-24 | Applied Materials, Inc. | Method and apparatus for forming an anti-reflective coating on a substrate |
Non-Patent Citations (2)
Title |
---|
KIM J-Y ET AL: "Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 19, no. 2, March 2001 (2001-03-01), pages 429 - 434, XP012005484, ISSN: 0734-2101 * |
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 01 31 January 1996 (1996-01-31) * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9334557B2 (en) | 2007-12-21 | 2016-05-10 | Sapurast Research Llc | Method for sputter targets for electrolyte films |
US8906523B2 (en) | 2008-08-11 | 2014-12-09 | Infinite Power Solutions, Inc. | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
US9532453B2 (en) | 2009-09-01 | 2016-12-27 | Sapurast Research Llc | Printed circuit board with integrated thin film battery |
Also Published As
Publication number | Publication date |
---|---|
TWI338338B (en) | 2011-03-01 |
WO2004106582A2 (en) | 2004-12-09 |
US7238628B2 (en) | 2007-07-03 |
US20070172681A1 (en) | 2007-07-26 |
CN1826424A (en) | 2006-08-30 |
EP1633902A2 (en) | 2006-03-15 |
EP1633902B1 (en) | 2012-12-26 |
US20040259305A1 (en) | 2004-12-23 |
US8076005B2 (en) | 2011-12-13 |
TW200507118A (en) | 2005-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2004106582A3 (en) | Physical vapor deposition of titanium-based films | |
JP5349455B2 (en) | Transparent barrier films and methods for producing them | |
Jeong et al. | Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating | |
EP1641722B1 (en) | Corrosion-resistant low-emissivity coatings | |
JP6045043B2 (en) | Quenchable and non-quenable transparent nanocomposite layers | |
WO2004077519A3 (en) | Dielectric barrier layer films | |
EP1116801B1 (en) | Method of applying a coating by physical vapour deposition | |
CZ299337B6 (en) | Process for producing glass pane coating by magnetron sputtering process, glass pane with transparent thin-layer system and double-glazing pane incorporating the coated glass pane | |
WO2010065966A3 (en) | High rate deposition of thin films with improved barrier layer properties | |
CA2477844A1 (en) | Thin film coating having niobium-titanium layer | |
US20050191522A1 (en) | Article coated with zirconium compound film, method for preparing the article and sputtering target for use in coating with the film | |
JPH0588310B2 (en) | ||
US20120206789A1 (en) | Coated article and method for making the same | |
KR20070052475A (en) | Method for manufacturing color tile using thin film deposition method | |
US20060051597A1 (en) | Article coated with titanium compound film, process for producing the article and sputtering target for use in coating the film | |
CN102477527B (en) | Manufacture method of shell and shell manufactured by method | |
Asgary et al. | Evolution of Structural, Morphological, Mechanical and Optical properties of TiAlN coatings by Variation of N and Al amount | |
Huang et al. | Preparation of rutile and anatase phases titanium oxide film by RF sputtering | |
WO2009133076A2 (en) | Sputter target, method for manufacturing a layer, particularly a tco (transparent conductive oxide) layer, and method for manufacturing a thin layer solar cell | |
CN206022118U (en) | Thin film capacitor | |
JP2003251732A (en) | Transparent gas-barrier thin coating film | |
CN202415379U (en) | Coated glass with protective film layer | |
TW201722201A (en) | Electronic device and method for sealing electronic device | |
KR101870871B1 (en) | Color film and method for manufacturing the same | |
KR20160020696A (en) | Transparent conductive film where multi-layer thin film is coated |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480021078.6 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2004751754 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2004751754 Country of ref document: EP |