WO2004109405A3 - Vorrichtung für die erzeugung und / oder beeinflussung elektromagnetischer strahlung eines plasmas - Google Patents

Vorrichtung für die erzeugung und / oder beeinflussung elektromagnetischer strahlung eines plasmas Download PDF

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Publication number
WO2004109405A3
WO2004109405A3 PCT/DE2004/001132 DE2004001132W WO2004109405A3 WO 2004109405 A3 WO2004109405 A3 WO 2004109405A3 DE 2004001132 W DE2004001132 W DE 2004001132W WO 2004109405 A3 WO2004109405 A3 WO 2004109405A3
Authority
WO
WIPO (PCT)
Prior art keywords
generation
plasma
electromagnetic radiation
influencing electromagnetic
euv
Prior art date
Application number
PCT/DE2004/001132
Other languages
English (en)
French (fr)
Other versions
WO2004109405A2 (de
Inventor
Siegfried Schwarzl
Stefan Wurm
Original Assignee
Infineon Technologies Ag
Siegfried Schwarzl
Stefan Wurm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Siegfried Schwarzl, Stefan Wurm filed Critical Infineon Technologies Ag
Priority to JP2006508117A priority Critical patent/JP4302733B2/ja
Publication of WO2004109405A2 publication Critical patent/WO2004109405A2/de
Publication of WO2004109405A3 publication Critical patent/WO2004109405A3/de
Priority to US11/290,620 priority patent/US7323821B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Abstract

Die Erfindung betrifft eine Vorrichtung für die Erzeugung und / oder Beinflussung elektromagnetischer Strahlung eines Plasmas für die lithographische Herstellung von Halbleiterbauelementen, insbesondere zur Erzeugung und / oder Reflexion von EUV-Strahlung für die EUV-Lithographie. Erfindungsgemäß ist ein Magnetmittel (10) zur Erzeugung mindestens eines inhomogenen Magnetfeldes (11) als Mittel zur gezielten Abschirmung von Ladungsträgern des Plasmas (3) von mindestens einer Fläche der Vorrichtung (1; 5; 12).und / oder eines anderen Bauteils (5; 12) vorgesehen. Hierdurch wird die Lebensdauer der Vorrichtung und / oder anderer Bauteile erhöht.
PCT/DE2004/001132 2003-05-30 2004-05-27 Vorrichtung für die erzeugung und / oder beeinflussung elektromagnetischer strahlung eines plasmas WO2004109405A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006508117A JP4302733B2 (ja) 2003-05-30 2004-05-27 プラズマの電磁波を生成および／または操作する装置
US11/290,620 US7323821B2 (en) 2003-05-30 2005-11-30 Device for generating and/or influencing electromagnetic radiation from a plasma

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10325151A DE10325151B4 (de) 2003-05-30 2003-05-30 Vorrichtung für die Erzeugung und/oder Beeinflussung elektromagnetischer Strahlung eines Plasmas
DE10325151.0 2003-05-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/290,620 Continuation US7323821B2 (en) 2003-05-30 2005-11-30 Device for generating and/or influencing electromagnetic radiation from a plasma

Publications (2)

Publication Number Publication Date
WO2004109405A2 WO2004109405A2 (de) 2004-12-16
WO2004109405A3 true WO2004109405A3 (de) 2005-02-10

Family

ID=33494810

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/001132 WO2004109405A2 (de) 2003-05-30 2004-05-27 Vorrichtung für die erzeugung und / oder beeinflussung elektromagnetischer strahlung eines plasmas

Country Status (4)

Country Link
US (1) US7323821B2 (de)
JP (1) JP4302733B2 (de)
DE (1) DE10325151B4 (de)
WO (1) WO2004109405A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8158959B2 (en) 2009-02-12 2012-04-17 Gigaphoton Inc. Extreme ultraviolet light source apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10325151B4 (de) * 2003-05-30 2006-11-30 Infineon Technologies Ag Vorrichtung für die Erzeugung und/oder Beeinflussung elektromagnetischer Strahlung eines Plasmas
JP4954584B2 (ja) * 2006-03-31 2012-06-20 株式会社小松製作所 極端紫外光源装置
US8901521B2 (en) 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
NL1036803A (nl) * 2008-09-09 2010-03-15 Asml Netherlands Bv Radiation system and lithographic apparatus.
DE102011086328A1 (de) 2011-11-15 2013-05-16 Carl Zeiss Smt Gmbh Spiegel zum Einsatz zur Führung von Beleuchtungs- und Abbildungslicht in der EUV-Projektionslithografie
IL226105A (en) * 2013-01-16 2014-05-28 Orteron T O Ltd A device and method to produce a strange plasma
US10266802B2 (en) * 2013-01-16 2019-04-23 Orteron (T.O) Ltd. Method for controlling biological processes in microorganisms

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US4746799A (en) * 1986-07-30 1988-05-24 Mcmillan Michael R Atomic jet radiation source
DE19930755A1 (de) * 1999-07-02 2001-01-04 Jens Christiansen Hochfrequenz angeregte Gaslaser mit Plasmaeinschluß durch magnetische Multipolfelder
US6377651B1 (en) * 1999-10-11 2002-04-23 University Of Central Florida Laser plasma source for extreme ultraviolet lithography using a water droplet target
US20030006708A1 (en) * 2001-05-17 2003-01-09 Ka-Ngo Leung Microwave ion source
WO2003087867A2 (en) * 2002-04-10 2003-10-23 Cymer, Inc. Extreme ultraviolet light source

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US4746799A (en) * 1986-07-30 1988-05-24 Mcmillan Michael R Atomic jet radiation source
DE19930755A1 (de) * 1999-07-02 2001-01-04 Jens Christiansen Hochfrequenz angeregte Gaslaser mit Plasmaeinschluß durch magnetische Multipolfelder
US6377651B1 (en) * 1999-10-11 2002-04-23 University Of Central Florida Laser plasma source for extreme ultraviolet lithography using a water droplet target
US20030006708A1 (en) * 2001-05-17 2003-01-09 Ka-Ngo Leung Microwave ion source
WO2003087867A2 (en) * 2002-04-10 2003-10-23 Cymer, Inc. Extreme ultraviolet light source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8158959B2 (en) 2009-02-12 2012-04-17 Gigaphoton Inc. Extreme ultraviolet light source apparatus
US8586954B2 (en) 2009-02-12 2013-11-19 Gigaphoton Inc. Extreme ultraviolet light source apparatus

Also Published As

Publication number Publication date
DE10325151B4 (de) 2006-11-30
JP2006526281A (ja) 2006-11-16
WO2004109405A2 (de) 2004-12-16
US20060132046A1 (en) 2006-06-22
DE10325151A1 (de) 2005-01-05
JP4302733B2 (ja) 2009-07-29
US7323821B2 (en) 2008-01-29

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