WO2004114313A3 - Tracking cells for a memory system - Google Patents

Tracking cells for a memory system Download PDF

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Publication number
WO2004114313A3
WO2004114313A3 PCT/US2004/018172 US2004018172W WO2004114313A3 WO 2004114313 A3 WO2004114313 A3 WO 2004114313A3 US 2004018172 W US2004018172 W US 2004018172W WO 2004114313 A3 WO2004114313 A3 WO 2004114313A3
Authority
WO
WIPO (PCT)
Prior art keywords
tracking cells
memory system
cells
data
tracking
Prior art date
Application number
PCT/US2004/018172
Other languages
French (fr)
Other versions
WO2004114313A2 (en
Inventor
Daniel C Guterman
Stephen J Gross
Shahzad Khalid
Geoffrey S Gongwer
Original Assignee
Sandisk Corp
Daniel C Guterman
Stephen J Gross
Shahzad Khalid
Geoffrey S Gongwer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp, Daniel C Guterman, Stephen J Gross, Shahzad Khalid, Geoffrey S Gongwer filed Critical Sandisk Corp
Priority to KR1020057024002A priority Critical patent/KR101049580B1/en
Priority to JP2006533611A priority patent/JP4681559B2/en
Priority to AT04754703T priority patent/ATE535912T1/en
Priority to EP04754703A priority patent/EP1636802B1/en
Priority to CN2004800212103A priority patent/CN1826659B/en
Publication of WO2004114313A2 publication Critical patent/WO2004114313A2/en
Publication of WO2004114313A3 publication Critical patent/WO2004114313A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate

Abstract

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells 5 provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.
PCT/US2004/018172 2003-06-13 2004-06-07 Tracking cells for a memory system WO2004114313A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020057024002A KR101049580B1 (en) 2003-06-13 2004-06-07 Tracking Cells for Memory Systems
JP2006533611A JP4681559B2 (en) 2003-06-13 2004-06-07 Memory system tracking cell
AT04754703T ATE535912T1 (en) 2003-06-13 2004-06-07 TRACKING CELLS FOR A STORAGE SYSTEM
EP04754703A EP1636802B1 (en) 2003-06-13 2004-06-07 Tracking cells for a memory system
CN2004800212103A CN1826659B (en) 2003-06-13 2004-06-07 Memory system, method for reading data stored in the memory system and method for executed by the memory system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/461,244 US7237074B2 (en) 2003-06-13 2003-06-13 Tracking cells for a memory system
US10/461,244 2003-06-13

Publications (2)

Publication Number Publication Date
WO2004114313A2 WO2004114313A2 (en) 2004-12-29
WO2004114313A3 true WO2004114313A3 (en) 2005-03-17

Family

ID=33511212

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/018172 WO2004114313A2 (en) 2003-06-13 2004-06-07 Tracking cells for a memory system

Country Status (8)

Country Link
US (5) US7237074B2 (en)
EP (1) EP1636802B1 (en)
JP (1) JP4681559B2 (en)
KR (1) KR101049580B1 (en)
CN (1) CN1826659B (en)
AT (1) ATE535912T1 (en)
TW (1) TWI244089B (en)
WO (1) WO2004114313A2 (en)

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