WO2004114380A1 - 露光装置及びデバイス製造方法 - Google Patents
露光装置及びデバイス製造方法 Download PDFInfo
- Publication number
- WO2004114380A1 WO2004114380A1 PCT/JP2004/008595 JP2004008595W WO2004114380A1 WO 2004114380 A1 WO2004114380 A1 WO 2004114380A1 JP 2004008595 W JP2004008595 W JP 2004008595W WO 2004114380 A1 WO2004114380 A1 WO 2004114380A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- exposure apparatus
- liquid
- substrate
- wafer
- optical system
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
- G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70816—Bearings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Abstract
Description
Claims
Priority Applications (45)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167032936A KR101830565B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020147002172A KR101483916B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020187035459A KR20180132996A (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
DE602004024782T DE602004024782D1 (de) | 2003-06-19 | 2004-06-18 | Belichtungseinrichtung und bauelementeherstellungsverfahren |
KR1020157001442A KR101674329B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020137005136A KR101419663B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020187003214A KR101931923B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020097023978A KR101134957B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020137028434A KR101476087B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
EP04746097A EP1635382B1 (en) | 2003-06-19 | 2004-06-18 | Exposure device and device producing method |
KR1020117028752A KR101187617B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020157031632A KR101686762B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020107023718A KR101148811B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020107023716A KR101148810B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020107000875A KR101146962B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020137005135A KR101475634B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
JP2005507235A JP4437474B2 (ja) | 2003-06-19 | 2004-06-18 | 露光装置及びデバイス製造方法 |
AT04746097T ATE453209T1 (de) | 2003-06-19 | 2004-06-18 | Belichtungseinrichtung und bauelementeherstellungsverfahren |
KR1020127016894A KR101265454B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020127006006A KR101265450B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020147016500A KR101529844B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
KR1020117022062A KR101289979B1 (ko) | 2003-06-19 | 2004-06-18 | 노광 장치 및 디바이스 제조방법 |
US11/258,846 US7321419B2 (en) | 2003-06-19 | 2005-10-27 | Exposure apparatus, and device manufacturing method |
KR1020057023089A KR101119812B1 (ko) | 2003-06-19 | 2005-12-02 | 노광 장치 및 디바이스 제조방법 |
US11/339,683 US7812925B2 (en) | 2003-06-19 | 2006-01-26 | Exposure apparatus, and device manufacturing method |
US11/340,680 US8018575B2 (en) | 2003-06-19 | 2006-01-27 | Exposure apparatus, and device manufacturing method |
US11/602,371 US7486385B2 (en) | 2003-06-19 | 2006-11-21 | Exposure apparatus, and device manufacturing method |
US11/785,716 US8027027B2 (en) | 2003-06-19 | 2007-04-19 | Exposure apparatus, and device manufacturing method |
US11/889,733 US8436978B2 (en) | 2003-06-19 | 2007-08-16 | Exposure apparatus, and device manufacturing method |
US12/382,807 US8319941B2 (en) | 2003-06-19 | 2009-03-24 | Exposure apparatus, and device manufacturing method |
US12/923,717 US8705001B2 (en) | 2003-06-19 | 2010-10-05 | Exposure apparatus, and device manufacturing method |
US12/923,718 US8436979B2 (en) | 2003-06-19 | 2010-10-05 | Exposure apparatus, and device manufacturing method |
US13/137,753 US8767177B2 (en) | 2003-06-19 | 2011-09-09 | Exposure apparatus, and device manufacturing method |
US13/449,430 US8830445B2 (en) | 2003-06-19 | 2012-04-18 | Exposure apparatus, and device manufacturing method |
US13/852,807 US8724085B2 (en) | 2003-06-19 | 2013-03-28 | Exposure apparatus, and device manufacturing method |
US13/853,643 US8717537B2 (en) | 2003-06-19 | 2013-03-29 | Exposure apparatus, and device manufacturing method |
US13/853,319 US8692976B2 (en) | 2003-06-19 | 2013-03-29 | Exposure apparatus, and device manufacturing method |
US14/230,377 US9001307B2 (en) | 2003-06-19 | 2014-03-31 | Exposure apparatus and device manufacturing method |
US14/230,537 US9019473B2 (en) | 2003-06-19 | 2014-03-31 | Exposure apparatus and device manufacturing method |
US14/305,656 US9025129B2 (en) | 2003-06-19 | 2014-06-16 | Exposure apparatus, and device manufacturing method |
US14/669,326 US9274437B2 (en) | 2003-06-19 | 2015-03-26 | Exposure apparatus and device manufacturing method |
US15/054,920 US9551943B2 (en) | 2003-06-19 | 2016-02-26 | Exposure apparatus and device manufacturing method |
US15/407,597 US9810995B2 (en) | 2003-06-19 | 2017-01-17 | Exposure apparatus and device manufacturing method |
US15/724,777 US10007188B2 (en) | 2003-06-19 | 2017-10-04 | Exposure apparatus and device manufacturing method |
US16/013,131 US10191388B2 (en) | 2003-06-19 | 2018-06-20 | Exposure apparatus, and device manufacturing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003174259 | 2003-06-19 | ||
JP2003-174259 | 2003-06-19 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/258,846 Continuation US7321419B2 (en) | 2003-06-19 | 2005-10-27 | Exposure apparatus, and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004114380A1 true WO2004114380A1 (ja) | 2004-12-29 |
Family
ID=33534785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/008595 WO2004114380A1 (ja) | 2003-06-19 | 2004-06-18 | 露光装置及びデバイス製造方法 |
Country Status (10)
Country | Link |
---|---|
US (22) | US7321419B2 (ja) |
EP (4) | EP2275869B1 (ja) |
JP (19) | JP4437474B2 (ja) |
KR (19) | KR101289979B1 (ja) |
CN (2) | CN100459036C (ja) |
AT (1) | ATE453209T1 (ja) |
DE (1) | DE602004024782D1 (ja) |
HK (3) | HK1145043A1 (ja) |
TW (15) | TWI590306B (ja) |
WO (1) | WO2004114380A1 (ja) |
Cited By (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332100A (ja) * | 2005-05-23 | 2006-12-07 | Canon Inc | 液浸露光装置 |
US7161659B2 (en) | 2005-04-08 | 2007-01-09 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
WO2007052659A1 (ja) * | 2005-11-01 | 2007-05-10 | Nikon Corporation | 露光装置、露光方法、及びデバイス製造方法 |
JPWO2005074014A1 (ja) * | 2004-02-02 | 2007-09-13 | 株式会社ニコン | ステージ駆動方法及びステージ装置、露光装置、並びにデバイス製造方法 |
JP2008010893A (ja) * | 2007-09-25 | 2008-01-17 | Canon Inc | 露光装置 |
US7349064B2 (en) | 2003-06-27 | 2008-03-25 | Canon Kabushiki Kaisha | Immersion exposure technique |
US7426014B2 (en) | 2004-07-01 | 2008-09-16 | Nikon Corporation | Dynamic fluid control system for immersion lithography |
US7456929B2 (en) | 2004-10-15 | 2008-11-25 | Nikon Corporation | Exposure apparatus and device manufacturing method |
JP2008547039A (ja) * | 2005-06-14 | 2008-12-25 | カール・ツァイス・エスエムティー・アーゲー | 高開口かつ平面的な端面を有する投影対物レンズ |
US7483120B2 (en) | 2006-05-09 | 2009-01-27 | Asml Netherlands B.V. | Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method |
US7515281B2 (en) | 2005-04-08 | 2009-04-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7671963B2 (en) | 2004-05-21 | 2010-03-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7688421B2 (en) | 2004-06-17 | 2010-03-30 | Nikon Corporation | Fluid pressure compensation for immersion lithography lens |
US7755839B2 (en) | 2003-12-19 | 2010-07-13 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal lens |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US7812925B2 (en) | 2003-06-19 | 2010-10-12 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US7898643B2 (en) | 2003-06-27 | 2011-03-01 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
US7929110B2 (en) | 2003-04-10 | 2011-04-19 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US8004649B2 (en) | 2003-06-19 | 2011-08-23 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US8018573B2 (en) * | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE42741E1 (en) | 2003-06-27 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8035795B2 (en) | 2003-04-11 | 2011-10-11 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the protection lens during wafer exchange in an immersion lithography machine |
US8064044B2 (en) | 2004-01-05 | 2011-11-22 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
US8089610B2 (en) | 2003-04-10 | 2012-01-03 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US8111373B2 (en) | 2004-03-25 | 2012-02-07 | Nikon Corporation | Exposure apparatus and device fabrication method |
JP4888388B2 (ja) * | 2005-03-31 | 2012-02-29 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
US8203693B2 (en) | 2005-04-19 | 2012-06-19 | Asml Netherlands B.V. | Liquid immersion lithography system comprising a tilted showerhead relative to a substrate |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US8446579B2 (en) | 2008-05-28 | 2013-05-21 | Nikon Corporation | Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
US8462317B2 (en) | 2007-10-16 | 2013-06-11 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8508714B2 (en) | 2006-11-15 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8520291B2 (en) | 2007-10-16 | 2013-08-27 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
EP2472332B1 (en) * | 2004-11-01 | 2014-03-12 | Nikon Corporation | Exposure apparatus and device fabricating method |
US8675177B2 (en) | 2003-04-09 | 2014-03-18 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9097981B2 (en) | 2007-10-12 | 2015-08-04 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9134623B2 (en) | 2003-11-14 | 2015-09-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9140993B2 (en) | 2003-10-28 | 2015-09-22 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9164209B2 (en) | 2003-11-20 | 2015-10-20 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
EP3279739A1 (en) * | 2006-02-21 | 2018-02-07 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
EP3293577A1 (en) * | 2006-02-21 | 2018-03-14 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
US10451973B2 (en) | 2005-05-03 | 2019-10-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10495981B2 (en) | 2005-03-04 | 2019-12-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2020197750A (ja) * | 2016-09-12 | 2020-12-10 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置のための流体ハンドリング構造 |
CN112154316A (zh) * | 2018-02-27 | 2020-12-29 | 乔治亚技术研究公司 | 提供流体动力阻挡件的系统、装置及方法 |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100588124B1 (ko) * | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
US7372541B2 (en) * | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1571697A4 (en) * | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4438747B2 (ja) | 2003-09-26 | 2010-03-24 | 株式会社ニコン | 投影露光装置及び投影露光装置の洗浄方法、メンテナンス方法並びにデバイスの製造方法 |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101230712B1 (ko) | 2004-08-03 | 2013-02-07 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US7528931B2 (en) * | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124351A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP2006222165A (ja) * | 2005-02-08 | 2006-08-24 | Canon Inc | 露光装置 |
JP5309565B2 (ja) * | 2005-08-05 | 2013-10-09 | 株式会社ニコン | ステージ装置、露光装置、方法、露光方法、及びデバイス製造方法 |
US20070127135A1 (en) * | 2005-11-01 | 2007-06-07 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
US20070126999A1 (en) * | 2005-12-07 | 2007-06-07 | Nikon Corporation | Apparatus and method for containing immersion liquid in immersion lithography |
US7420194B2 (en) | 2005-12-27 | 2008-09-02 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US7804582B2 (en) * | 2006-07-28 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus, method of calibrating a lithographic apparatus and device manufacturing method |
SG174737A1 (en) * | 2006-08-31 | 2011-10-28 | Nikon Corp | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
KR101529845B1 (ko) * | 2006-08-31 | 2015-06-17 | 가부시키가이샤 니콘 | 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
US7872730B2 (en) * | 2006-09-15 | 2011-01-18 | Nikon Corporation | Immersion exposure apparatus and immersion exposure method, and device manufacturing method |
US7999918B2 (en) * | 2006-09-29 | 2011-08-16 | Nikon Corporation | Movable body system, pattern formation apparatus, exposure apparatus and exposure method, and device manufacturing method |
US8237911B2 (en) * | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US8267388B2 (en) * | 2007-09-12 | 2012-09-18 | Xradia, Inc. | Alignment assembly |
US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
WO2009060585A1 (ja) * | 2007-11-07 | 2009-05-14 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
CN104133347B (zh) * | 2007-12-28 | 2016-05-18 | 株式会社尼康 | 曝光装置、曝光方法 |
FR2927708A1 (fr) * | 2008-02-19 | 2009-08-21 | Commissariat Energie Atomique | Procede de photolithographie ultraviolette a immersion |
NL1036614A1 (nl) * | 2008-03-21 | 2009-09-22 | Asml Netherlands Bv | A target material, a source, an EUV lithographic apparatus and a device manufacturing method using the same. |
KR101634825B1 (ko) * | 2008-06-09 | 2016-06-29 | 케이엘에이-텐코어 코오포레이션 | 참조 검사 디바이스 |
US8260479B2 (en) * | 2008-12-09 | 2012-09-04 | Honeywell International Inc. | Modular software architecture for an unmanned aerial vehicle |
US8902402B2 (en) | 2008-12-19 | 2014-12-02 | Nikon Corporation | Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method |
US8773635B2 (en) * | 2008-12-19 | 2014-07-08 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8599359B2 (en) | 2008-12-19 | 2013-12-03 | Nikon Corporation | Exposure apparatus, exposure method, device manufacturing method, and carrier method |
US8760629B2 (en) | 2008-12-19 | 2014-06-24 | Nikon Corporation | Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body |
EP2221668B1 (en) * | 2009-02-24 | 2021-04-14 | ASML Netherlands B.V. | Lithographic apparatus and positioning assembly |
US8553204B2 (en) * | 2009-05-20 | 2013-10-08 | Nikon Corporation | Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method |
US8970820B2 (en) | 2009-05-20 | 2015-03-03 | Nikon Corporation | Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method |
US8792084B2 (en) * | 2009-05-20 | 2014-07-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
JP5365407B2 (ja) * | 2009-08-17 | 2013-12-11 | ソニー株式会社 | 画像取得装置及び画像取得方法 |
US20110096306A1 (en) * | 2009-09-28 | 2011-04-28 | Nikon Corporation | Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method |
US20110102761A1 (en) * | 2009-09-28 | 2011-05-05 | Nikon Corporation | Stage apparatus, exposure apparatus, and device fabricating method |
US20110096318A1 (en) * | 2009-09-28 | 2011-04-28 | Nikon Corporation | Exposure apparatus and device fabricating method |
US20110096312A1 (en) * | 2009-09-28 | 2011-04-28 | Nikon Corporation | Exposure apparatus and device fabricating method |
US20110123913A1 (en) * | 2009-11-19 | 2011-05-26 | Nikon Corporation | Exposure apparatus, exposing method, and device fabricating method |
US20110128523A1 (en) * | 2009-11-19 | 2011-06-02 | Nikon Corporation | Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
DE102010024263A1 (de) * | 2010-06-18 | 2011-12-22 | Festo Ag & Co. Kg | Luftlagereinrichtung |
EP2593841A2 (en) * | 2010-07-15 | 2013-05-22 | Centre de Recherche Public - Gabriel Lippmann | Methods and systems for detecting, setting, monitoring, determining, storing and compensating the spatial situation of a mobile unit |
NL2008183A (en) * | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method. |
NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
NL2008695A (en) * | 2011-05-25 | 2012-11-27 | Asml Netherlands Bv | Lithographic apparatus comprising substrate table. |
NL2007114C2 (en) * | 2011-07-14 | 2013-01-15 | Levitech B V | Floating substrate monitoring and control device, and method for the same. |
NL2009692A (en) * | 2011-12-07 | 2013-06-10 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
US9207549B2 (en) | 2011-12-29 | 2015-12-08 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement |
US9211481B2 (en) * | 2012-07-27 | 2015-12-15 | Nb Tech Inc. | Visual display system and method of constructing a high-gain reflective beam-splitter |
JP5975785B2 (ja) * | 2012-08-14 | 2016-08-23 | 株式会社アドテックエンジニアリング | 描画装置、露光描画装置、プログラム及び描画方法 |
US9362812B2 (en) * | 2012-09-18 | 2016-06-07 | Honeywell International Inc. | Shaft coupling apparatus, rotary fluid damper, and deployable device with magnetic coupling mechanism |
US9772564B2 (en) | 2012-11-12 | 2017-09-26 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method |
TWI564555B (zh) * | 2014-12-27 | 2017-01-01 | 財團法人工業技術研究院 | 全周反射取像模組與全周反射取像方法 |
CN104597721B (zh) * | 2015-01-20 | 2016-09-21 | 中国科学院上海光学精密机械研究所 | 紫外光刻二维平台 |
CN107430357B (zh) * | 2015-03-31 | 2021-02-05 | 株式会社尼康 | 曝光装置、平面显示器的制造方法、元件制造方法、及曝光方法 |
PT3319475T (pt) | 2015-07-06 | 2020-06-19 | Mitchell Terrace Pty Ltd | Dispositivo para aplicação de um produto |
US10732510B2 (en) * | 2015-09-30 | 2020-08-04 | Nikon Corporation | Exposure apparatus and exposure method, and flat panel display manufacturing method |
US10527957B2 (en) * | 2015-11-30 | 2020-01-07 | Asml Netherlands B.V. | Method and apparatus for processing a substrate in a lithographic apparatus |
US10372113B2 (en) * | 2016-09-23 | 2019-08-06 | Kla-Tencor Corporation | Method for defocus detection |
US9990460B2 (en) * | 2016-09-30 | 2018-06-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Source beam optimization method for improving lithography printability |
CN109256884A (zh) * | 2017-10-13 | 2019-01-22 | 朱卫 | 一种用钛金属生产的马达外壳 |
JP6922849B2 (ja) * | 2018-05-25 | 2021-08-18 | 信越化学工業株式会社 | 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法 |
CN110658683A (zh) * | 2018-06-28 | 2020-01-07 | 上海微电子装备(集团)股份有限公司 | 晶片承载系统和浸没光刻设备 |
JP7099250B2 (ja) | 2018-10-25 | 2022-07-12 | 信越化学工業株式会社 | オニウム塩、ネガ型レジスト組成物及びレジストパターン形成方法 |
JP2019183175A (ja) * | 2019-08-01 | 2019-10-24 | ダイキン工業株式会社 | 離型フィルム |
CN115818207B (zh) * | 2023-02-10 | 2023-06-02 | 季华实验室 | 一种基板传送装置、控制方法及相关设备 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2001241439A (ja) * | 2000-02-25 | 2001-09-07 | Canon Inc | 静圧軸受を備えた移動装置 |
JP2002134390A (ja) * | 2000-10-23 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 送り装置 |
JP2002305140A (ja) * | 2001-04-06 | 2002-10-18 | Nikon Corp | 露光装置及び基板処理システム |
JP2003017404A (ja) * | 2001-06-21 | 2003-01-17 | Nikon Corp | ステージ装置及び露光装置 |
JP2004165666A (ja) * | 2002-11-12 | 2004-06-10 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
WO2004053955A1 (ja) * | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP2004207696A (ja) * | 2002-12-10 | 2004-07-22 | Nikon Corp | 露光装置及びデバイス製造方法 |
Family Cites Families (326)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US4026653A (en) * | 1975-05-09 | 1977-05-31 | Bell Telephone Laboratories, Incorporated | Proximity printing method |
US4341164A (en) | 1980-06-13 | 1982-07-27 | Charles H. Ruble | Folding camp table |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) * | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
US4650983A (en) | 1983-11-07 | 1987-03-17 | Nippon Kogaku K. K. | Focusing apparatus for projection optical system |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
US4780617A (en) | 1984-08-09 | 1988-10-25 | Nippon Kogaku K.K. | Method for successive alignment of chip patterns on a substrate |
JPS6144429A (ja) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | 位置合わせ方法、及び位置合せ装置 |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JP2940553B2 (ja) | 1988-12-21 | 1999-08-25 | 株式会社ニコン | 露光方法 |
JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
US5121256A (en) | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
US5243195A (en) | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
JP3200874B2 (ja) | 1991-07-10 | 2001-08-20 | 株式会社ニコン | 投影露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP3203719B2 (ja) | 1991-12-26 | 2001-08-27 | 株式会社ニコン | 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法 |
JPH05304072A (ja) | 1992-04-08 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
US5469963A (en) | 1992-04-08 | 1995-11-28 | Asyst Technologies, Inc. | Sealable transportable container having improved liner |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
KR100300618B1 (ko) | 1992-12-25 | 2001-11-22 | 오노 시게오 | 노광방법,노광장치,및그장치를사용하는디바이스제조방법 |
JP3316833B2 (ja) | 1993-03-26 | 2002-08-19 | 株式会社ニコン | 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法 |
JPH06208058A (ja) | 1993-01-13 | 1994-07-26 | Olympus Optical Co Ltd | 顕微鏡対物レンズ |
US5591958A (en) * | 1993-06-14 | 1997-01-07 | Nikon Corporation | Scanning exposure method and apparatus |
JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
US5636066A (en) | 1993-03-12 | 1997-06-03 | Nikon Corporation | Optical apparatus |
JPH09311278A (ja) | 1996-05-20 | 1997-12-02 | Nikon Corp | 反射屈折光学系 |
JP3635684B2 (ja) | 1994-08-23 | 2005-04-06 | 株式会社ニコン | 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置 |
JP3747958B2 (ja) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JP3747951B2 (ja) | 1994-11-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
US5534970A (en) | 1993-06-11 | 1996-07-09 | Nikon Corporation | Scanning exposure apparatus |
JP3265503B2 (ja) | 1993-06-11 | 2002-03-11 | 株式会社ニコン | 露光方法及び装置 |
JP3212199B2 (ja) | 1993-10-04 | 2001-09-25 | 旭硝子株式会社 | 平板型陰極線管 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US6989647B1 (en) | 1994-04-01 | 2006-01-24 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US7365513B1 (en) | 1994-04-01 | 2008-04-29 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
JP3395801B2 (ja) | 1994-04-28 | 2003-04-14 | 株式会社ニコン | 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法 |
JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
JPH07335748A (ja) | 1994-06-07 | 1995-12-22 | Miyazaki Oki Electric Co Ltd | 半導体素子の製造方法 |
US5715064A (en) * | 1994-06-17 | 1998-02-03 | International Business Machines Corporation | Step and repeat apparatus having enhanced accuracy and increased throughput |
USRE38438E1 (en) | 1994-08-23 | 2004-02-24 | Nikon Corporation | Catadioptric reduction projection optical system and exposure apparatus having the same |
JPH0883753A (ja) | 1994-09-13 | 1996-03-26 | Nikon Corp | 焦点検出方法 |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JPH08136475A (ja) | 1994-11-14 | 1996-05-31 | Kawasaki Steel Corp | 板状材の表面観察装置 |
JP3387075B2 (ja) * | 1994-12-12 | 2003-03-17 | 株式会社ニコン | 走査露光方法、露光装置、及び走査型露光装置 |
JPH08171054A (ja) | 1994-12-16 | 1996-07-02 | Nikon Corp | 反射屈折光学系 |
US5677758A (en) | 1995-02-09 | 1997-10-14 | Mrs Technology, Inc. | Lithography System using dual substrate stages |
US6008500A (en) | 1995-04-04 | 1999-12-28 | Nikon Corporation | Exposure apparatus having dynamically isolated reaction frame |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JP3526042B2 (ja) | 1995-08-09 | 2004-05-10 | 株式会社ニコン | 投影露光装置 |
JP3242564B2 (ja) * | 1995-11-29 | 2001-12-25 | 富士通株式会社 | 昇圧回路を有する記憶装置及び昇圧回路制御方法 |
JPH09232213A (ja) | 1996-02-26 | 1997-09-05 | Nikon Corp | 投影露光装置 |
JPH09267236A (ja) * | 1996-03-29 | 1997-10-14 | Kyocera Corp | 位置決め装置 |
US5964441A (en) | 1996-04-01 | 1999-10-12 | Lear Corporation | Linkage assembly with extruded hole member |
JPH103039A (ja) | 1996-06-14 | 1998-01-06 | Nikon Corp | 反射屈折光学系 |
JPH1020195A (ja) | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系 |
JP3480192B2 (ja) * | 1996-10-01 | 2003-12-15 | ウシオ電機株式会社 | Xyステージの位置決め装置 |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JPH10188333A (ja) * | 1996-11-08 | 1998-07-21 | Hitachi Maxell Ltd | 原盤露光装置 |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
AU5067898A (en) | 1996-11-28 | 1998-06-22 | Nikon Corporation | Aligner and method for exposure |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
JP4029181B2 (ja) * | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置 |
EP0890136B9 (en) | 1996-12-24 | 2003-12-10 | ASML Netherlands B.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
US5815246A (en) | 1996-12-24 | 1998-09-29 | U.S. Philips Corporation | Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device |
JPH10209039A (ja) | 1997-01-27 | 1998-08-07 | Nikon Corp | 投影露光方法及び投影露光装置 |
USRE39027E1 (en) * | 1997-02-07 | 2006-03-21 | Emerson Power Transmission Manufacturing, L.P. | Shaft locking device for bearing assemblies |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
EP0900412B1 (en) | 1997-03-10 | 2005-04-06 | ASML Netherlands B.V. | Lithographic apparatus comprising a positioning device having two object holders |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
US5884841A (en) * | 1997-04-25 | 1999-03-23 | Ratnik Industries, Inc. | Method and apparatus for making snow |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
EP1028456A4 (en) | 1997-09-19 | 2003-03-05 | Nikon Corp | PLATINUM, SCANNING ALIGNMENT DEVICE, AND SCANNING EXPOSURE METHOD, AND DEVICE MANUFACTURED THEREBY |
JP2000106340A (ja) * | 1997-09-26 | 2000-04-11 | Nikon Corp | 露光装置及び走査露光方法、並びにステージ装置 |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
WO1999027568A1 (fr) | 1997-11-21 | 1999-06-03 | Nikon Corporation | Graveur de motifs a projection et procede de sensibilisation a projection |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
JP4264676B2 (ja) | 1998-11-30 | 2009-05-20 | 株式会社ニコン | 露光装置及び露光方法 |
WO1999031462A1 (fr) | 1997-12-18 | 1999-06-24 | Nikon Corporation | Platine et appareil d'exposition |
US6897963B1 (en) | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
JPH11219896A (ja) * | 1998-02-02 | 1999-08-10 | Canon Inc | 露光装置およびデバイス製造方法 |
JPH11340846A (ja) | 1998-05-26 | 1999-12-10 | Alps Electric Co Ltd | Dect通信装置 |
JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
AU5650399A (en) | 1998-09-17 | 2000-04-10 | Nikon Corporation | Method of adjusting optical projection system |
JP2002531942A (ja) * | 1998-12-02 | 2002-09-24 | ニューポート・コーポレーション | 試料を保持するロボットアーム端部エフェクタ |
WO2000055891A1 (fr) | 1999-03-12 | 2000-09-21 | Nikon Corporation | Dispositif pour exposition, procede d'exposition et procede de fabrication d'un tel dispositif |
JP4365934B2 (ja) | 1999-05-10 | 2009-11-18 | キヤノン株式会社 | 露光装置、半導体製造装置およびデバイス製造方法 |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
JP2001118773A (ja) | 1999-10-18 | 2001-04-27 | Nikon Corp | ステージ装置及び露光装置 |
WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
JP2001160530A (ja) * | 1999-12-01 | 2001-06-12 | Nikon Corp | ステージ装置及び露光装置 |
TWI223734B (en) * | 1999-12-21 | 2004-11-11 | Asml Netherlands Bv | Crash prevention in positioning apparatus for use in lithographic projection apparatus |
EP1111471B1 (en) * | 1999-12-21 | 2005-11-23 | ASML Netherlands B.V. | Lithographic projection apparatus with collision preventing device |
TW546551B (en) | 1999-12-21 | 2003-08-11 | Asml Netherlands Bv | Balanced positioning system for use in lithographic apparatus |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
JP2001267239A (ja) | 2000-01-14 | 2001-09-28 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
JP2001313250A (ja) | 2000-02-25 | 2001-11-09 | Nikon Corp | 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法 |
KR20010085493A (ko) | 2000-02-25 | 2001-09-07 | 시마무라 기로 | 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법 |
US6426790B1 (en) * | 2000-02-28 | 2002-07-30 | Nikon Corporation | Stage apparatus and holder, and scanning exposure apparatus and exposure apparatus |
JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
JP4503906B2 (ja) | 2000-05-03 | 2010-07-14 | エーエスエムエル ホールディング エヌ.ブイ. | パージガスを用いた非接触型シール |
SE517970C2 (sv) | 2000-07-20 | 2002-08-13 | Volvo Articulated Haulers Ab | Förfarande för att uppskatta en livslängdsreducerande skada på ett i drift belastat objekt,jämte datorprogramprodukt |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
JP2002134930A (ja) | 2000-10-20 | 2002-05-10 | Idec Izumi Corp | 電気機器 |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2002198299A (ja) | 2000-12-27 | 2002-07-12 | Nikon Corp | 露光装置及びデバイス製造方法 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
US6680774B1 (en) * | 2001-10-09 | 2004-01-20 | Ultratech Stepper, Inc. | Method and apparatus for mechanically masking a workpiece |
US6665054B2 (en) * | 2001-10-22 | 2003-12-16 | Nikon Corporation | Two stage method |
US7134668B2 (en) * | 2001-10-24 | 2006-11-14 | Ebara Corporation | Differential pumping seal apparatus |
JP2003249443A (ja) | 2001-12-21 | 2003-09-05 | Nikon Corp | ステージ装置、ステージ位置管理方法、露光方法及び露光装置、並びにデバイス製造方法 |
DE10229249A1 (de) | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
US7154676B2 (en) | 2002-03-01 | 2006-12-26 | Carl Zeiss Smt A.G. | Very-high aperture projection objective |
US7190527B2 (en) | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
CN1650401B (zh) * | 2002-04-09 | 2010-04-21 | 株式会社尼康 | 曝光方法与曝光装置、以及器件的制造方法 |
EP1353229A1 (en) * | 2002-04-09 | 2003-10-15 | ASML Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
KR20040104691A (ko) | 2002-05-03 | 2004-12-10 | 칼 짜이스 에스엠테 아게 | 높은 개구를 갖는 투영 대물렌즈 |
US20040035775A1 (en) * | 2002-05-31 | 2004-02-26 | Biolink Partners, Inc. | MemCoatTM: functionalized surface coatings, products and uses thereof |
WO2004019128A2 (en) | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
CN101382738B (zh) | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
JP3977324B2 (ja) * | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
EP1420300B1 (en) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
WO2004055803A1 (en) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
EP1732075A3 (en) | 2002-12-19 | 2007-02-21 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
JP4364805B2 (ja) | 2002-12-19 | 2009-11-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上にスポットを照射する方法及び装置 |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US20040227932A1 (en) | 2003-02-13 | 2004-11-18 | Geunyoung Yoon | Large dynamic range shack-hartmann wavefront sensor |
US7090964B2 (en) * | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6851787B2 (en) * | 2003-03-06 | 2005-02-08 | Hewlett-Packard Development Company, L.P. | Printer servicing system and method |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
JP4902201B2 (ja) * | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
JP4650413B2 (ja) | 2003-04-10 | 2011-03-16 | 株式会社ニコン | 液浸リソグフラフィ装置用の移送領域を含む環境システム |
SG2012050829A (en) | 2003-04-10 | 2015-07-30 | Nippon Kogaku Kk | Environmental system including vacuum scavange for an immersion lithography apparatus |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
KR101225884B1 (ko) | 2003-04-11 | 2013-01-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
SG185136A1 (en) | 2003-04-11 | 2012-11-29 | Nikon Corp | Cleanup method for optics in immersion lithography |
WO2004095135A2 (en) | 2003-04-17 | 2004-11-04 | Nikon Corporation | Optical arrangement of autofocus elements for use with immersion lithography |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI282487B (en) * | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
TW200509205A (en) | 2003-05-23 | 2005-03-01 | Nippon Kogaku Kk | Exposure method and device-manufacturing method |
JP2004349645A (ja) | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261741A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4054285B2 (ja) * | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) * | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
KR101289979B1 (ko) | 2003-06-19 | 2013-07-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) * | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) * | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP2005019616A (ja) | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP4343597B2 (ja) | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1491956B1 (en) * | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1494074A1 (en) | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
JP2005022696A (ja) * | 2003-07-02 | 2005-01-27 | Kashiwara Seitai:Kk | 空気通路の構造及びこれを用いた空気封入緩衝材 |
EP2853943B1 (en) | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
JP4492239B2 (ja) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | 露光装置及びデバイス製造方法、並びに露光装置の制御方法 |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
EP2264534B1 (en) | 2003-07-28 | 2013-07-17 | Nikon Corporation | Exposure apparatus, method for producing device, and method for controlling exposure apparatus |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7145643B2 (en) | 2003-08-07 | 2006-12-05 | Asml Netherlands B.V. | Interface unit, lithographic projection apparatus comprising such an interface unit and a device manufacturing method |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
EP1519230A1 (en) | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1519231B1 (en) | 2003-09-29 | 2005-12-21 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7158211B2 (en) | 2003-09-29 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP2005136374A (ja) | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1524557A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
TWI295408B (en) | 2003-10-22 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method, and measurement system |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
JP2005159322A (ja) | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
WO2005050324A2 (en) | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
EP1531362A3 (en) | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
JP2005150290A (ja) | 2003-11-13 | 2005-06-09 | Canon Inc | 露光装置およびデバイスの製造方法 |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
EP1695148B1 (en) | 2003-11-24 | 2015-10-28 | Carl Zeiss SMT GmbH | Immersion objective |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10355301B3 (de) | 2003-11-27 | 2005-06-23 | Infineon Technologies Ag | Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175016A (ja) | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
JP2005175034A (ja) | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
JP4308638B2 (ja) | 2003-12-17 | 2009-08-05 | パナソニック株式会社 | パターン形成方法 |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
JP4586367B2 (ja) | 2004-01-14 | 2010-11-24 | 株式会社ニコン | ステージ装置及び露光装置 |
DE602005008707D1 (de) | 2004-01-14 | 2008-09-18 | Zeiss Carl Smt Ag | Catadioptrisches projektionsobjektiv |
KR101295439B1 (ko) | 2004-01-16 | 2013-08-09 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
JP4843503B2 (ja) | 2004-01-20 | 2011-12-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
EP1713114B1 (en) | 2004-02-03 | 2018-09-19 | Nikon Corporation | Exposure apparatus and device manufacturing method |
WO2005074606A2 (en) | 2004-02-03 | 2005-08-18 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070165198A1 (en) | 2004-02-13 | 2007-07-19 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
JP2005236087A (ja) | 2004-02-20 | 2005-09-02 | Nikon Corp | 露光装置 |
JP2005259789A (ja) | 2004-03-09 | 2005-09-22 | Nikon Corp | 検知システム及び露光装置、デバイス製造方法 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
JP2005268700A (ja) | 2004-03-22 | 2005-09-29 | Nikon Corp | ステージ装置及び露光装置 |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7295283B2 (en) * | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7712905B2 (en) | 2004-04-08 | 2010-05-11 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) * | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) * | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US20050241694A1 (en) | 2004-04-29 | 2005-11-03 | Red Flame Hot Tap Services Ltd. | Hot tapping method, system and apparatus |
US7379159B2 (en) * | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005111722A2 (en) | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20170129271A (ko) | 2004-05-17 | 2017-11-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005119368A2 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
KR101199076B1 (ko) | 2004-06-04 | 2012-11-07 | 칼 짜이스 에스엠티 게엠베하 | 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소 |
JP4305915B2 (ja) | 2004-06-17 | 2009-07-29 | シャープ株式会社 | 基地局選択に用いる基準を求める方法 |
US7057702B2 (en) | 2004-06-23 | 2006-06-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4305917B2 (ja) | 2004-07-14 | 2009-07-29 | シャープ株式会社 | 映像信号処理装置及びテレビジョン装置 |
US7256871B2 (en) * | 2004-07-27 | 2007-08-14 | Asml Netherlands B.V. | Lithographic apparatus and method for calibrating the same |
EP3046135B1 (en) | 2004-10-15 | 2017-09-20 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7119876B2 (en) | 2004-10-18 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7583357B2 (en) | 2004-11-12 | 2009-09-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124351A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7161659B2 (en) | 2005-04-08 | 2007-01-09 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
SG172613A1 (en) | 2006-05-23 | 2011-07-28 | Nikon Corp | Maintenance method, exposure method and apparatus, and device manufacturing method |
US8436864B2 (en) * | 2006-08-01 | 2013-05-07 | Nvidia Corporation | Method and user interface for enhanced graphical operation organization |
US8446445B2 (en) * | 2006-09-27 | 2013-05-21 | Casio Computer Co., Ltd. | Exposure device, image forming apparatus and method for operating exposure device |
TWM314880U (en) * | 2006-10-20 | 2007-07-01 | Imagetech Co Ltd | Multimedia video generation device |
JP2007274881A (ja) | 2006-12-01 | 2007-10-18 | Nikon Corp | 移動体装置、微動体及び露光装置 |
-
2004
- 2004-06-18 KR KR1020117022062A patent/KR101289979B1/ko active IP Right Grant
- 2004-06-18 TW TW105113425A patent/TWI590306B/zh not_active IP Right Cessation
- 2004-06-18 DE DE602004024782T patent/DE602004024782D1/de active Active
- 2004-06-18 AT AT04746097T patent/ATE453209T1/de not_active IP Right Cessation
- 2004-06-18 KR KR1020137005136A patent/KR101419663B1/ko active IP Right Grant
- 2004-06-18 EP EP10185953.6A patent/EP2275869B1/en not_active Not-in-force
- 2004-06-18 KR KR1020107000875A patent/KR101146962B1/ko active IP Right Grant
- 2004-06-18 KR KR1020107023716A patent/KR101148810B1/ko active IP Right Grant
- 2004-06-18 TW TW102123164A patent/TWI515769B/zh not_active IP Right Cessation
- 2004-06-18 KR KR1020137028434A patent/KR101476087B1/ko active IP Right Grant
- 2004-06-18 KR KR1020107023718A patent/KR101148811B1/ko active IP Right Grant
- 2004-06-18 KR KR1020167032936A patent/KR101830565B1/ko active IP Right Grant
- 2004-06-18 TW TW103137368A patent/TWI527086B/zh not_active IP Right Cessation
- 2004-06-18 KR KR1020187035459A patent/KR20180132996A/ko active IP Right Grant
- 2004-06-18 KR KR1020117028752A patent/KR101187617B1/ko active IP Right Grant
- 2004-06-18 KR KR1020157001442A patent/KR101674329B1/ko active IP Right Grant
- 2004-06-18 CN CNB200480015978XA patent/CN100459036C/zh active Active
- 2004-06-18 KR KR1020127016894A patent/KR101265454B1/ko active IP Right Grant
- 2004-06-18 TW TW104107541A patent/TWI543235B/zh not_active IP Right Cessation
- 2004-06-18 TW TW102123165A patent/TWI515770B/zh not_active IP Right Cessation
- 2004-06-18 KR KR1020097023978A patent/KR101134957B1/ko active IP Right Grant
- 2004-06-18 TW TW102123393A patent/TWI536430B/zh not_active IP Right Cessation
- 2004-06-18 KR KR1020157031632A patent/KR101686762B1/ko active IP Right Grant
- 2004-06-18 KR KR1020147002172A patent/KR101483916B1/ko active IP Right Grant
- 2004-06-18 TW TW106105260A patent/TW201721717A/zh unknown
- 2004-06-18 KR KR1020127006006A patent/KR101265450B1/ko active IP Right Grant
- 2004-06-18 TW TW098146233A patent/TWI433212B/zh not_active IP Right Cessation
- 2004-06-18 EP EP10185992.4A patent/EP2278401B1/en active Active
- 2004-06-18 TW TW102123163A patent/TWI540612B/zh not_active IP Right Cessation
- 2004-06-18 TW TW099136460A patent/TWI482200B/zh not_active IP Right Cessation
- 2004-06-18 WO PCT/JP2004/008595 patent/WO2004114380A1/ja active Application Filing
- 2004-06-18 EP EP09015888A patent/EP2216685B1/en not_active Not-in-force
- 2004-06-18 JP JP2005507235A patent/JP4437474B2/ja not_active Expired - Fee Related
- 2004-06-18 KR KR1020137005135A patent/KR101475634B1/ko active IP Right Grant
- 2004-06-18 KR KR1020147016500A patent/KR101529844B1/ko active IP Right Grant
- 2004-06-18 TW TW093117577A patent/TW200514132A/zh not_active IP Right Cessation
- 2004-06-18 TW TW103137370A patent/TWI564933B/zh not_active IP Right Cessation
- 2004-06-18 TW TW098146230A patent/TWI463532B/zh not_active IP Right Cessation
- 2004-06-18 CN CN2008101846483A patent/CN101436003B/zh active Active
- 2004-06-18 KR KR1020187003214A patent/KR101931923B1/ko active IP Right Grant
- 2004-06-18 EP EP04746097A patent/EP1635382B1/en not_active Not-in-force
- 2004-06-18 TW TW099136459A patent/TWI457981B/zh not_active IP Right Cessation
- 2004-06-18 TW TW098113289A patent/TWI433211B/zh not_active IP Right Cessation
-
2005
- 2005-10-27 US US11/258,846 patent/US7321419B2/en active Active
- 2005-12-02 KR KR1020057023089A patent/KR101119812B1/ko active IP Right Grant
-
2006
- 2006-01-26 US US11/339,683 patent/US7812925B2/en not_active Expired - Fee Related
- 2006-01-27 US US11/340,680 patent/US8018575B2/en not_active Expired - Fee Related
- 2006-11-21 US US11/602,371 patent/US7486385B2/en not_active Expired - Fee Related
-
2007
- 2007-04-19 US US11/785,716 patent/US8027027B2/en not_active Expired - Fee Related
- 2007-08-16 US US11/889,733 patent/US8436978B2/en not_active Expired - Fee Related
-
2009
- 2009-02-26 JP JP2009044470A patent/JP4505675B2/ja not_active Expired - Fee Related
- 2009-03-24 US US12/382,807 patent/US8319941B2/en not_active Expired - Fee Related
-
2010
- 2010-02-08 JP JP2010025992A patent/JP4894936B2/ja not_active Expired - Fee Related
- 2010-10-05 US US12/923,717 patent/US8705001B2/en not_active Expired - Fee Related
- 2010-10-05 US US12/923,718 patent/US8436979B2/en not_active Expired - Fee Related
- 2010-12-10 HK HK10111515.1A patent/HK1145043A1/xx not_active IP Right Cessation
- 2010-12-28 JP JP2010293650A patent/JP5287845B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-23 JP JP2011037041A patent/JP5287901B2/ja not_active Expired - Fee Related
- 2011-02-23 JP JP2011037040A patent/JP5287900B2/ja not_active Expired - Fee Related
- 2011-06-21 HK HK11106390.0A patent/HK1152391A1/xx not_active IP Right Cessation
- 2011-06-21 HK HK11106397.3A patent/HK1152392A1/xx not_active IP Right Cessation
- 2011-09-09 US US13/137,753 patent/US8767177B2/en not_active Expired - Fee Related
-
2012
- 2012-03-29 JP JP2012078269A patent/JP5488635B2/ja not_active Expired - Fee Related
- 2012-03-29 JP JP2012077973A patent/JP5494708B2/ja not_active Expired - Fee Related
- 2012-04-18 US US13/449,430 patent/US8830445B2/en not_active Expired - Fee Related
-
2013
- 2013-03-28 US US13/852,807 patent/US8724085B2/en active Active
- 2013-03-29 US US13/853,643 patent/US8717537B2/en not_active Expired - Fee Related
- 2013-03-29 US US13/853,319 patent/US8692976B2/en not_active Expired - Fee Related
- 2013-04-08 JP JP2013080847A patent/JP5556925B2/ja not_active Expired - Fee Related
- 2013-12-27 JP JP2013272184A patent/JP5626443B2/ja not_active Expired - Fee Related
-
2014
- 2014-03-31 US US14/230,537 patent/US9019473B2/en not_active Expired - Fee Related
- 2014-03-31 US US14/230,377 patent/US9001307B2/en active Active
- 2014-04-02 JP JP2014076375A patent/JP5761418B2/ja not_active Expired - Fee Related
- 2014-06-16 US US14/305,656 patent/US9025129B2/en active Active
-
2015
- 2015-01-16 JP JP2015006821A patent/JP5928618B2/ja not_active Expired - Fee Related
- 2015-03-26 US US14/669,326 patent/US9274437B2/en not_active Expired - Fee Related
- 2015-06-25 JP JP2015127136A patent/JP5930102B2/ja not_active Expired - Fee Related
- 2015-10-20 JP JP2015206314A patent/JP6103016B2/ja not_active Expired - Fee Related
-
2016
- 2016-01-12 JP JP2016003694A patent/JP6123920B2/ja active Active
- 2016-02-26 US US15/054,920 patent/US9551943B2/en not_active Expired - Fee Related
- 2016-10-21 JP JP2016207355A patent/JP6237857B2/ja not_active Expired - Fee Related
-
2017
- 2017-01-17 US US15/407,597 patent/US9810995B2/en not_active Expired - Fee Related
- 2017-02-08 JP JP2017020807A patent/JP6264479B2/ja not_active Expired - Fee Related
- 2017-09-14 JP JP2017176254A patent/JP6512252B2/ja not_active Expired - Fee Related
- 2017-10-04 US US15/724,777 patent/US10007188B2/en not_active Expired - Fee Related
-
2018
- 2018-06-20 US US16/013,131 patent/US10191388B2/en not_active Expired - Fee Related
- 2018-10-05 JP JP2018190188A patent/JP6614310B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2001241439A (ja) * | 2000-02-25 | 2001-09-07 | Canon Inc | 静圧軸受を備えた移動装置 |
JP2002134390A (ja) * | 2000-10-23 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 送り装置 |
JP2002305140A (ja) * | 2001-04-06 | 2002-10-18 | Nikon Corp | 露光装置及び基板処理システム |
JP2003017404A (ja) * | 2001-06-21 | 2003-01-17 | Nikon Corp | ステージ装置及び露光装置 |
JP2004165666A (ja) * | 2002-11-12 | 2004-06-10 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
WO2004053955A1 (ja) * | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP2004207696A (ja) * | 2002-12-10 | 2004-07-22 | Nikon Corp | 露光装置及びデバイス製造方法 |
Cited By (193)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8675177B2 (en) | 2003-04-09 | 2014-03-18 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in first and second pairs of areas |
US9146474B2 (en) | 2003-04-09 | 2015-09-29 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger and different linear polarization states in an on-axis area and a plurality of off-axis areas |
US9164393B2 (en) | 2003-04-09 | 2015-10-20 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in four areas |
US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
US9885959B2 (en) | 2003-04-09 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator |
US7929111B2 (en) | 2003-04-10 | 2011-04-19 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US9658537B2 (en) | 2003-04-10 | 2017-05-23 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US8456610B2 (en) | 2003-04-10 | 2013-06-04 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US9244363B2 (en) | 2003-04-10 | 2016-01-26 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US9977350B2 (en) | 2003-04-10 | 2018-05-22 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US9244362B2 (en) | 2003-04-10 | 2016-01-26 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US8089610B2 (en) | 2003-04-10 | 2012-01-03 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US7969552B2 (en) | 2003-04-10 | 2011-06-28 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US7965376B2 (en) | 2003-04-10 | 2011-06-21 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US8810768B2 (en) | 2003-04-10 | 2014-08-19 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US9910370B2 (en) | 2003-04-10 | 2018-03-06 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US8830443B2 (en) | 2003-04-10 | 2014-09-09 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US7929110B2 (en) | 2003-04-10 | 2011-04-19 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US9632427B2 (en) | 2003-04-10 | 2017-04-25 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
US8836914B2 (en) | 2003-04-10 | 2014-09-16 | Nikon Corporation | Environmental system including vacuum scavenge for an immersion lithography apparatus |
US8514367B2 (en) | 2003-04-11 | 2013-08-20 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US8610875B2 (en) | 2003-04-11 | 2013-12-17 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US8351019B2 (en) | 2003-04-11 | 2013-01-08 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US8269944B2 (en) | 2003-04-11 | 2012-09-18 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US9081298B2 (en) | 2003-04-11 | 2015-07-14 | Nikon Corporation | Apparatus for maintaining immersion fluid in the gap under the projection lens during wafer exchange using a co-planar member in an immersion lithography machine |
US8848166B2 (en) | 2003-04-11 | 2014-09-30 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US9329493B2 (en) | 2003-04-11 | 2016-05-03 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US8879047B2 (en) | 2003-04-11 | 2014-11-04 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens using a pad member or second stage during wafer exchange in an immersion lithography machine |
US8488100B2 (en) | 2003-04-11 | 2013-07-16 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US8035795B2 (en) | 2003-04-11 | 2011-10-11 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the protection lens during wafer exchange in an immersion lithography machine |
US9500960B2 (en) | 2003-04-11 | 2016-11-22 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US8848168B2 (en) | 2003-04-11 | 2014-09-30 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US9946163B2 (en) | 2003-04-11 | 2018-04-17 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US8634057B2 (en) | 2003-04-11 | 2014-01-21 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US8830445B2 (en) | 2003-06-19 | 2014-09-09 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US9025129B2 (en) | 2003-06-19 | 2015-05-05 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
JP2011119746A (ja) * | 2003-06-19 | 2011-06-16 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
US10191388B2 (en) | 2003-06-19 | 2019-01-29 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US9001307B2 (en) | 2003-06-19 | 2015-04-07 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US9551943B2 (en) | 2003-06-19 | 2017-01-24 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US8436979B2 (en) | 2003-06-19 | 2013-05-07 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US8004649B2 (en) | 2003-06-19 | 2011-08-23 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP2011109137A (ja) * | 2003-06-19 | 2011-06-02 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
US8018575B2 (en) | 2003-06-19 | 2011-09-13 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US8027027B2 (en) | 2003-06-19 | 2011-09-27 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US8724085B2 (en) | 2003-06-19 | 2014-05-13 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US7812925B2 (en) | 2003-06-19 | 2010-10-12 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US9019473B2 (en) | 2003-06-19 | 2015-04-28 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US9810995B2 (en) | 2003-06-19 | 2017-11-07 | Nikon Corporation | Exposure apparatus and device manufacturing method |
JP2014158038A (ja) * | 2003-06-19 | 2014-08-28 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
JP2011109138A (ja) * | 2003-06-19 | 2011-06-02 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
JP2019020745A (ja) * | 2003-06-19 | 2019-02-07 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
US9274437B2 (en) | 2003-06-19 | 2016-03-01 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US10007188B2 (en) | 2003-06-19 | 2018-06-26 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US9709899B2 (en) | 2003-06-19 | 2017-07-18 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US8692976B2 (en) | 2003-06-19 | 2014-04-08 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
JP2012138617A (ja) * | 2003-06-19 | 2012-07-19 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
US8705001B2 (en) | 2003-06-19 | 2014-04-22 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US8767177B2 (en) | 2003-06-19 | 2014-07-01 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US9715178B2 (en) | 2003-06-19 | 2017-07-25 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US8319941B2 (en) | 2003-06-19 | 2012-11-27 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
JP2013168666A (ja) * | 2003-06-19 | 2013-08-29 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
US8717537B2 (en) | 2003-06-19 | 2014-05-06 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
US8436978B2 (en) | 2003-06-19 | 2013-05-07 | Nikon Corporation | Exposure apparatus, and device manufacturing method |
USRE42741E1 (en) | 2003-06-27 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7898643B2 (en) | 2003-06-27 | 2011-03-01 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
US7349064B2 (en) | 2003-06-27 | 2008-03-25 | Canon Kabushiki Kaisha | Immersion exposure technique |
US7372542B2 (en) | 2003-06-27 | 2008-05-13 | Canon Kabushiki Kaisha | Immersion exposure technique |
US7420651B2 (en) | 2003-06-27 | 2008-09-02 | Canon Kabushiki Kaisha | Immersion exposure technique |
US7450216B2 (en) | 2003-06-27 | 2008-11-11 | Canon Kabushiki Kaisha | Immersion exposure technique |
US7466393B2 (en) | 2003-06-27 | 2008-12-16 | Canon Kabushiki Kaisha | Immersion exposure technique |
US7561248B2 (en) | 2003-06-27 | 2009-07-14 | Canon Kabushiki Kaisha | Immersion exposure technique |
US7619714B2 (en) | 2003-06-27 | 2009-11-17 | Canon Kabushiki Kaisha | Immersion exposure technique |
US7679718B2 (en) | 2003-06-27 | 2010-03-16 | Canon Kabushiki Kaisha | Immersion exposure technique |
US9760014B2 (en) | 2003-10-28 | 2017-09-12 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9244359B2 (en) | 2003-10-28 | 2016-01-26 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9423697B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9140992B2 (en) | 2003-10-28 | 2015-09-22 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9140993B2 (en) | 2003-10-28 | 2015-09-22 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9146476B2 (en) | 2003-10-28 | 2015-09-29 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9952515B2 (en) | 2003-11-14 | 2018-04-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9134623B2 (en) | 2003-11-14 | 2015-09-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9134622B2 (en) | 2003-11-14 | 2015-09-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10345712B2 (en) | 2003-11-14 | 2019-07-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
US9164209B2 (en) | 2003-11-20 | 2015-10-20 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power having different thicknesses to rotate linear polarization direction |
US10281632B2 (en) | 2003-11-20 | 2019-05-07 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction |
US7782538B2 (en) | 2003-12-15 | 2010-08-24 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
US7755839B2 (en) | 2003-12-19 | 2010-07-13 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal lens |
US8064044B2 (en) | 2004-01-05 | 2011-11-22 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
US9910369B2 (en) | 2004-01-05 | 2018-03-06 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
US9588436B2 (en) | 2004-01-05 | 2017-03-07 | Nikon Corporation | Exposure apparatus, exposure method, and device producing method |
JP2011211222A (ja) * | 2004-02-02 | 2011-10-20 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
JP2010098333A (ja) * | 2004-02-02 | 2010-04-30 | Nikon Corp | ステージ駆動方法及びステージ装置、露光装置、並びにデバイス製造方法 |
US8736808B2 (en) | 2004-02-02 | 2014-05-27 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US8045136B2 (en) | 2004-02-02 | 2011-10-25 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US8711328B2 (en) | 2004-02-02 | 2014-04-29 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US8705002B2 (en) | 2004-02-02 | 2014-04-22 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US8724079B2 (en) | 2004-02-02 | 2014-05-13 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
JP2012142603A (ja) * | 2004-02-02 | 2012-07-26 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
US8553203B2 (en) | 2004-02-02 | 2013-10-08 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
JP2011124606A (ja) * | 2004-02-02 | 2011-06-23 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
US8547528B2 (en) | 2004-02-02 | 2013-10-01 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
JP2011097112A (ja) * | 2004-02-02 | 2011-05-12 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
US9632431B2 (en) | 2004-02-02 | 2017-04-25 | Nikon Corporation | Lithographic apparatus and method having substrate and sensor tables |
JPWO2005074014A1 (ja) * | 2004-02-02 | 2007-09-13 | 株式会社ニコン | ステージ駆動方法及びステージ装置、露光装置、並びにデバイス製造方法 |
US10139737B2 (en) | 2004-02-02 | 2018-11-27 | Nikon Corporation | Lithographic apparatus and method having substrate and sensor tables |
US9665016B2 (en) | 2004-02-02 | 2017-05-30 | Nikon Corporation | Lithographic apparatus and method having substrate table and sensor table to hold immersion liquid |
US10007196B2 (en) | 2004-02-02 | 2018-06-26 | Nikon Corporation | Lithographic apparatus and method having substrate and sensor tables |
US9684248B2 (en) | 2004-02-02 | 2017-06-20 | Nikon Corporation | Lithographic apparatus having substrate table and sensor table to measure a patterned beam |
JP2010098332A (ja) * | 2004-02-02 | 2010-04-30 | Nikon Corp | ステージ駆動方法及びステージ装置、露光装置、並びにデバイス製造方法 |
US10241417B2 (en) | 2004-02-06 | 2019-03-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10007194B2 (en) | 2004-02-06 | 2018-06-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US9423694B2 (en) | 2004-02-06 | 2016-08-23 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US9429848B2 (en) | 2004-02-06 | 2016-08-30 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10234770B2 (en) | 2004-02-06 | 2019-03-19 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US9140990B2 (en) | 2004-02-06 | 2015-09-22 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US8411248B2 (en) | 2004-03-25 | 2013-04-02 | Nikon Corporation | Exposure apparatus and device fabrication method |
US10126661B2 (en) | 2004-03-25 | 2018-11-13 | Nikon Corporation | Exposure apparatus and device fabrication method |
US8111373B2 (en) | 2004-03-25 | 2012-02-07 | Nikon Corporation | Exposure apparatus and device fabrication method |
US9046790B2 (en) | 2004-03-25 | 2015-06-02 | Nikon Corporation | Exposure apparatus and device fabrication method |
US9411248B2 (en) | 2004-03-25 | 2016-08-09 | Nikon Corporation | Exposure apparatus and device fabrication method |
US8169590B2 (en) | 2004-03-25 | 2012-05-01 | Nikon Corporation | Exposure apparatus and device fabrication method |
US7671963B2 (en) | 2004-05-21 | 2010-03-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8553201B2 (en) | 2004-05-21 | 2013-10-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8749754B2 (en) | 2004-05-21 | 2014-06-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7688421B2 (en) | 2004-06-17 | 2010-03-30 | Nikon Corporation | Fluid pressure compensation for immersion lithography lens |
US8194229B2 (en) | 2004-07-01 | 2012-06-05 | Nikon Corporation | Dynamic fluid control system for immersion lithography |
US7426014B2 (en) | 2004-07-01 | 2008-09-16 | Nikon Corporation | Dynamic fluid control system for immersion lithography |
US7456929B2 (en) | 2004-10-15 | 2008-11-25 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US8456609B2 (en) | 2004-10-15 | 2013-06-04 | Nikon Corporation | Exposure apparatus and device manufacturing method |
EP2472332B1 (en) * | 2004-11-01 | 2014-03-12 | Nikon Corporation | Exposure apparatus and device fabricating method |
US8018573B2 (en) * | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8902404B2 (en) | 2005-02-22 | 2014-12-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10495980B2 (en) | 2005-03-04 | 2019-12-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10495981B2 (en) | 2005-03-04 | 2019-12-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4888388B2 (ja) * | 2005-03-31 | 2012-02-29 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
USRE45576E1 (en) | 2005-04-08 | 2015-06-23 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US7161659B2 (en) | 2005-04-08 | 2007-01-09 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
USRE47943E1 (en) | 2005-04-08 | 2020-04-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
USRE44446E1 (en) * | 2005-04-08 | 2013-08-20 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US7515281B2 (en) | 2005-04-08 | 2009-04-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
KR100858980B1 (ko) * | 2005-04-08 | 2008-09-17 | 에이에스엠엘 네델란즈 비.브이. | 듀얼 스테이지 리소그래피 장치 및 디바이스 제조 방법 |
EP1710629A3 (en) * | 2005-04-08 | 2007-04-11 | ASML Netherlands BV | Dual stage lithographic apparatus and device manufacturing method |
USRE46933E1 (en) | 2005-04-08 | 2018-07-03 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US8203693B2 (en) | 2005-04-19 | 2012-06-19 | Asml Netherlands B.V. | Liquid immersion lithography system comprising a tilted showerhead relative to a substrate |
US10451973B2 (en) | 2005-05-03 | 2019-10-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10488759B2 (en) | 2005-05-03 | 2019-11-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9891539B2 (en) | 2005-05-12 | 2018-02-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9310696B2 (en) | 2005-05-12 | 2016-04-12 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9429851B2 (en) | 2005-05-12 | 2016-08-30 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9360763B2 (en) | 2005-05-12 | 2016-06-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
JP4708860B2 (ja) * | 2005-05-23 | 2011-06-22 | キヤノン株式会社 | 液浸露光装置 |
JP2006332100A (ja) * | 2005-05-23 | 2006-12-07 | Canon Inc | 液浸露光装置 |
JP2008547039A (ja) * | 2005-06-14 | 2008-12-25 | カール・ツァイス・エスエムティー・アーゲー | 高開口かつ平面的な端面を有する投影対物レンズ |
JPWO2007052659A1 (ja) * | 2005-11-01 | 2009-04-30 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
WO2007052659A1 (ja) * | 2005-11-01 | 2007-05-10 | Nikon Corporation | 露光装置、露光方法、及びデバイス製造方法 |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US8456611B2 (en) | 2005-11-29 | 2013-06-04 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
EP3293577A1 (en) * | 2006-02-21 | 2018-03-14 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
EP3327507A1 (en) * | 2006-02-21 | 2018-05-30 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
EP3279739A1 (en) * | 2006-02-21 | 2018-02-07 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US7483120B2 (en) | 2006-05-09 | 2009-01-27 | Asml Netherlands B.V. | Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method |
US8508714B2 (en) | 2006-11-15 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US9057963B2 (en) | 2007-09-14 | 2015-06-16 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
US9366970B2 (en) | 2007-09-14 | 2016-06-14 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
US8451427B2 (en) | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
JP2008010893A (ja) * | 2007-09-25 | 2008-01-17 | Canon Inc | 露光装置 |
JP4533416B2 (ja) * | 2007-09-25 | 2010-09-01 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9097981B2 (en) | 2007-10-12 | 2015-08-04 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US8462317B2 (en) | 2007-10-16 | 2013-06-11 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8520291B2 (en) | 2007-10-16 | 2013-08-27 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US8508717B2 (en) | 2007-10-16 | 2013-08-13 | Nikon Corporation | Illumination optical system, exposure apparatus, and device manufacturing method |
US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9857599B2 (en) | 2007-10-24 | 2018-01-02 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9057877B2 (en) | 2007-10-24 | 2015-06-16 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US8446579B2 (en) | 2008-05-28 | 2013-05-21 | Nikon Corporation | Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
US8456624B2 (en) | 2008-05-28 | 2013-06-04 | Nikon Corporation | Inspection device and inspecting method for spatial light modulator, illumination optical system, method for adjusting the illumination optical system, exposure apparatus, and device manufacturing method |
US11187991B2 (en) | 2008-05-28 | 2021-11-30 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
JP2020197750A (ja) * | 2016-09-12 | 2020-12-10 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置のための流体ハンドリング構造 |
JP7019766B2 (ja) | 2016-09-12 | 2022-02-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置のための流体ハンドリング構造 |
US11454892B2 (en) | 2016-09-12 | 2022-09-27 | Asml Netherlands B.V. | Fluid handling structure for lithographic apparatus |
US11860546B2 (en) | 2016-09-12 | 2024-01-02 | Asml Netherlands B.V. | Fluid handling structure for lithographic apparatus |
CN112154316A (zh) * | 2018-02-27 | 2020-12-29 | 乔治亚技术研究公司 | 提供流体动力阻挡件的系统、装置及方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6614310B2 (ja) | 露光装置、露光方法、及びデバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 11258846 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004746097 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005507235 Country of ref document: JP Ref document number: 1020057023089 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004815978X Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057023089 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2004746097 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 11258846 Country of ref document: US |