WO2005001900A3 - Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same - Google Patents
Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same Download PDFInfo
- Publication number
- WO2005001900A3 WO2005001900A3 PCT/US2004/018442 US2004018442W WO2005001900A3 WO 2005001900 A3 WO2005001900 A3 WO 2005001900A3 US 2004018442 W US2004018442 W US 2004018442W WO 2005001900 A3 WO2005001900 A3 WO 2005001900A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- steady
- state
- free carriers
- conversion
- equilibrium distribution
- Prior art date
Links
- 239000000969 carrier Substances 0.000 title abstract 2
- 238000006243 chemical reaction Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
- G02F2/02—Frequency-changing of light, e.g. by quantum counters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3556—Semiconductor materials, e.g. quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/11—Function characteristic involving infrared radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04754900A EP1636853A4 (en) | 2003-06-12 | 2004-06-10 | Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same |
JP2006533676A JP2007502031A (en) | 2003-06-12 | 2004-06-10 | Steady-state unbalance distribution of free carriers and photon energy up-conversion using it |
KR1020057023812A KR101118810B1 (en) | 2003-06-12 | 2004-06-10 | Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same |
IL172220A IL172220A (en) | 2003-06-12 | 2005-11-28 | Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47775203P | 2003-06-12 | 2003-06-12 | |
US60/477,752 | 2003-06-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005001900A2 WO2005001900A2 (en) | 2005-01-06 |
WO2005001900A3 true WO2005001900A3 (en) | 2005-10-20 |
Family
ID=33551756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/018442 WO2005001900A2 (en) | 2003-06-12 | 2004-06-10 | Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same |
Country Status (7)
Country | Link |
---|---|
US (3) | US6995371B2 (en) |
EP (1) | EP1636853A4 (en) |
JP (1) | JP2007502031A (en) |
KR (1) | KR101118810B1 (en) |
CN (1) | CN100527445C (en) |
IL (1) | IL172220A (en) |
WO (1) | WO2005001900A2 (en) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7852545B2 (en) * | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7186663B2 (en) * | 2004-03-15 | 2007-03-06 | Sharp Laboratories Of America, Inc. | High density plasma process for silicon thin films |
US6995371B2 (en) * | 2003-06-12 | 2006-02-07 | Sirica Corporation | Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same |
US7084405B1 (en) * | 2003-07-25 | 2006-08-01 | The United States Of America As Represented By The Secretary Of The Air Force | Semiconductor generation of dynamic infrared images |
IL158245A0 (en) * | 2003-10-02 | 2004-08-31 | Opgal Ltd | A flir camera having fov vs. sensitivity control |
US8357242B2 (en) * | 2007-05-03 | 2013-01-22 | Jewett Russell F | Crystalline film devices, apparatuses for and methods of fabrication |
US7180065B2 (en) * | 2004-09-30 | 2007-02-20 | Battelle Memorial Institute | Infra-red detector and method of making and using same |
DE602005010122D1 (en) * | 2005-01-04 | 2008-11-13 | Philips Intellectual Property | WAVELENGTH CONVERSION LAYERS WITH EMBEDDED CRYSTALLITES |
GB0503827D0 (en) * | 2005-02-24 | 2005-04-06 | E2V Tech Uk Ltd | Enhanced spectral range imaging sensor |
TWI287297B (en) * | 2005-09-05 | 2007-09-21 | Au Optronics Corp | Method of manufacturing nano crystals and application of the same |
US7611920B1 (en) * | 2005-11-17 | 2009-11-03 | Bae Systems Information And Electronic Systems Integration Inc. | Photonic coupling scheme for photodetectors |
US7391032B1 (en) * | 2005-12-21 | 2008-06-24 | Searete Llc | Multi-stage waveform detector |
KR100767629B1 (en) * | 2006-01-05 | 2007-10-17 | 한국과학기술원 | Complementary Metal Oxide Semiconductor image sensor having high photosensitivity and method for fabricating thereof |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
CA2641490A1 (en) * | 2006-02-13 | 2007-08-23 | Damoder Reddy | Photovoltaic device with nanostructured layers |
WO2007098378A1 (en) * | 2006-02-16 | 2007-08-30 | Solexant Corp. | Nanoparticle sensitized nanostructured solar cells |
WO2007098451A1 (en) * | 2006-02-17 | 2007-08-30 | Solexant Corporation | Nanostructured electroluminescent device and display |
US7550810B2 (en) * | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
KR100703033B1 (en) * | 2006-03-22 | 2007-04-09 | 삼성전자주식회사 | Semiconductor device and method of manufacturing the same |
AU2007314229A1 (en) * | 2006-03-23 | 2008-05-08 | Solexant Corp. | Photovoltaic device containing nanoparticle sensitized carbon nanotubes |
US7477440B1 (en) * | 2006-04-06 | 2009-01-13 | Miradia Inc. | Reflective spatial light modulator having dual layer electrodes and method of fabricating same |
US7769201B2 (en) * | 2006-06-13 | 2010-08-03 | Uchicago Argonne, Llc | Method for analyzing multi-layer materials from one-sided pulsed thermal imaging |
US7527998B2 (en) * | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
WO2008042859A2 (en) | 2006-09-29 | 2008-04-10 | University Of Florida Research Foundation, Inc. | Method and apparatus for infrared detection and display |
US8373060B2 (en) | 2006-10-24 | 2013-02-12 | Zetta Research and Development LLC—AQT Series | Semiconductor grain microstructures for photovoltaic cells |
US8426722B2 (en) | 2006-10-24 | 2013-04-23 | Zetta Research and Development LLC—AQT Series | Semiconductor grain and oxide layer for photovoltaic cells |
WO2008052067A2 (en) * | 2006-10-24 | 2008-05-02 | Applied Quantum Technology Llc | Semiconductor grain and oxide layer for photovoltaic cells |
EP2089910A4 (en) * | 2006-12-06 | 2012-12-26 | Solexant Corp | Nanophotovoltaic device with improved quantum efficiency |
US8158880B1 (en) | 2007-01-17 | 2012-04-17 | Aqt Solar, Inc. | Thin-film photovoltaic structures including semiconductor grain and oxide layers |
US20090020700A1 (en) * | 2007-07-17 | 2009-01-22 | Locheed Martin Corporation | Method and device for generating an electrical signal in response to light |
US20090050201A1 (en) * | 2007-07-17 | 2009-02-26 | The Research Foundation Of State University Of New York | Solar cell |
US8039736B2 (en) * | 2008-08-18 | 2011-10-18 | Andrew Clark | Photovoltaic up conversion and down conversion using rare earths |
CN101803367B (en) * | 2007-08-02 | 2013-04-03 | 慕尼黑工业大学 | Device for imaging and method for producing the device |
US7608824B2 (en) * | 2007-09-20 | 2009-10-27 | Ut-Battelle, Llc | Doped carbon nanostructure field emitter arrays for infrared imaging |
DE102007045546B3 (en) * | 2007-09-24 | 2009-01-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solar element, has luminance unit arranged adjacent to reflective structures that are arranged adjacent to vertical converters, where vertical converters are arranged adjacent to solar cell |
US8124936B1 (en) * | 2007-12-13 | 2012-02-28 | The United States Of America As Represented By The Secretary Of The Army | Stand-off chemical detector |
IL189254A0 (en) * | 2008-02-04 | 2008-08-07 | Garber Valery | Quantum uncooled infra-red photo-detector |
US8077326B1 (en) | 2008-03-31 | 2011-12-13 | Qualcomm Mems Technologies, Inc. | Human-readable, bi-state environmental sensors based on micro-mechanical membranes |
US7852491B2 (en) | 2008-03-31 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Human-readable, bi-state environmental sensors based on micro-mechanical membranes |
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US20110209987A1 (en) * | 2008-11-12 | 2011-09-01 | D.C. Sirica, Ltd. | Production of amorphous and crystalline silicon nanoclusters by hydrogen enhanced reactive magnetron sputtering within gas aggregation |
JP2010123872A (en) * | 2008-11-21 | 2010-06-03 | Sony Corp | Nondestructive inspection method for oxide semiconductor layer, and method of manufacturing oxide semiconductor layer |
WO2010104890A2 (en) | 2009-03-09 | 2010-09-16 | The University Of North Carolina At Charlotte | Efficiency enhancement of solar cells using light management |
US8395118B2 (en) * | 2009-04-12 | 2013-03-12 | Ud Holdings, Llc | Infrared detector having at least one switch for modulation and/or bypass |
DE102009040660A1 (en) * | 2009-09-09 | 2011-03-10 | Rheinmetall Waffe Munition Gmbh | Laser dosimeter |
JP5427531B2 (en) * | 2009-09-29 | 2014-02-26 | 三菱重工業株式会社 | Photodetection element, photodetection device, infrared detection element, infrared detection device |
JP2013506303A (en) | 2009-09-29 | 2013-02-21 | リサーチ トライアングル インスティテュート, インターナショナル | Quantum dot-fullerene junction based photodetector |
US9054262B2 (en) | 2009-09-29 | 2015-06-09 | Research Triangle Institute | Integrated optical upconversion devices and related methods |
US9349970B2 (en) | 2009-09-29 | 2016-05-24 | Research Triangle Institute | Quantum dot-fullerene junction based photodetectors |
JP2013508966A (en) * | 2009-10-22 | 2013-03-07 | ソル ヴォルタイクス アーベー | Nanowire tunnel diode and manufacturing method thereof |
US20110100423A1 (en) * | 2009-10-30 | 2011-05-05 | The Research Foundation Of State University Of New York | Light Scattering and Transport for Photosensitive Devices |
US8711361B2 (en) | 2009-11-05 | 2014-04-29 | Qualcomm, Incorporated | Methods and devices for detecting and measuring environmental conditions in high performance device packages |
US20110156184A1 (en) * | 2009-12-29 | 2011-06-30 | Rochester Institute Of Technology | Methods for improving detector response and system thereof |
CN102117861B (en) * | 2009-12-30 | 2012-07-25 | 昆明物理研究所 | Method for manufacturing amorphous mercury cadmium telluride monolithic integrated focal plane detector |
KR20130100232A (en) | 2010-04-09 | 2013-09-10 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | Mechanical layer of an electromechanical device and methods of forming the same |
CA2800549A1 (en) | 2010-05-24 | 2011-12-01 | University Of Florida Research Foundation, Inc. | Method and apparatus for providing a charge blocking layer on an infrared up-conversion device |
US8994934B1 (en) | 2010-11-10 | 2015-03-31 | Chemimage Corporation | System and method for eye safe detection of unknown targets |
CN102201487B (en) * | 2011-03-16 | 2013-01-09 | 中国科学院上海技术物理研究所 | Method for optimizing light gathering ability of micro-lens array of back-illuminated infrared detector |
JP5512583B2 (en) * | 2011-03-29 | 2014-06-04 | 旭化成エレクトロニクス株式会社 | Quantum infrared sensor |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
CN102279054B (en) * | 2011-05-24 | 2013-03-20 | 重庆大学 | Full-optical readable infrared imaging system based on quantum dot refractive index modulation |
US20140111652A1 (en) * | 2011-06-06 | 2014-04-24 | Nanoholdings, Llc | Infrared imaging device integrating an ir up-conversion device with a cmos image sensor |
JP6502093B2 (en) | 2011-06-30 | 2019-04-17 | ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド | Method and apparatus for detecting infrared radiation with gain |
US8743358B2 (en) | 2011-11-10 | 2014-06-03 | Chemimage Corporation | System and method for safer detection of unknown materials using dual polarized hyperspectral imaging and Raman spectroscopy |
US9116041B1 (en) * | 2012-06-11 | 2015-08-25 | The United States Of America As Represented By The Secretary Of The Navy | System and method for spectral infrared thermal imaging |
CN102820312B (en) * | 2012-07-30 | 2015-08-26 | 中国科学院上海高等研究院 | Imageing sensor photosensitive unit and manufacture method thereof |
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CN104614657A (en) * | 2015-01-20 | 2015-05-13 | 上海交通大学 | Method and device for detecting surface capture state density of nanometer structure |
CN104748053A (en) | 2015-03-30 | 2015-07-01 | 京东方科技集团股份有限公司 | Light source and preparation method thereof and lighting device capable of performing cutting and preparation method thereof |
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DE102017210684A1 (en) * | 2017-06-26 | 2018-12-27 | Robert Bosch Gmbh | Detector arrangement for a lidar system |
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CN113420478B (en) * | 2021-06-22 | 2022-11-01 | 郑州大学 | Method for analyzing mechanical property of high polymer crushed stone based on microscopic structure characteristics |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5482570A (en) * | 1992-07-29 | 1996-01-09 | Asulab S.A. | Photovoltaic cell |
US6654161B2 (en) * | 1998-11-25 | 2003-11-25 | University Of Central Florida | Dispersed crystallite up-conversion displays |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04112584A (en) * | 1990-09-03 | 1992-04-14 | Hitachi Ltd | Semiconductor device |
US5195104A (en) | 1991-10-15 | 1993-03-16 | Lasen, Inc. | Internally stimulated optical parametric oscillator/laser |
FR2722612B1 (en) * | 1994-07-13 | 1997-01-03 | Centre Nat Rech Scient | METHOD FOR MANUFACTURING A PHOTOVOLTAIC MATERIAL OR DEVICE, MATERIAL OR DEVICE THUS OBTAINED AND PHOTOPILE COMPRISING SUCH A MATERIAL OR DEVICE |
JP2001520637A (en) | 1995-09-06 | 2001-10-30 | ザ・リサーチ・ファンデーション・オブ・ステート・ユニバーシティ・オブ・ニューヨーク | Two-photon upconverting dyes and applications |
JP3478710B2 (en) * | 1996-11-27 | 2003-12-15 | 松下電器産業株式会社 | Optoelectronic material, its application device, and method of manufacturing optoelectronic material |
US6541788B2 (en) | 1998-10-27 | 2003-04-01 | The Regents Of The University Of California | Mid infrared and near infrared light upconverter using self-assembled quantum dots |
JP4029420B2 (en) * | 1999-07-15 | 2008-01-09 | 独立行政法人科学技術振興機構 | Millimeter-wave / far-infrared photodetector |
EP1176646A1 (en) * | 2000-07-28 | 2002-01-30 | Ecole Polytechnique Féderale de Lausanne (EPFL) | Solid state heterojunction and solid state sensitized photovoltaic cell |
JP4195556B2 (en) * | 2001-08-07 | 2008-12-10 | 日本放送協会 | Photoelectric conversion film manufacturing method, photoelectric conversion film manufacturing apparatus, and imaging device |
US6995371B2 (en) * | 2003-06-12 | 2006-02-07 | Sirica Corporation | Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same |
-
2004
- 2004-06-10 US US10/864,392 patent/US6995371B2/en not_active Expired - Fee Related
- 2004-06-10 WO PCT/US2004/018442 patent/WO2005001900A2/en active Application Filing
- 2004-06-10 EP EP04754900A patent/EP1636853A4/en not_active Withdrawn
- 2004-06-10 KR KR1020057023812A patent/KR101118810B1/en not_active IP Right Cessation
- 2004-06-10 JP JP2006533676A patent/JP2007502031A/en active Pending
- 2004-06-10 CN CNB2004800163376A patent/CN100527445C/en not_active Expired - Fee Related
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2005
- 2005-06-15 US US11/152,399 patent/US7193210B2/en not_active Expired - Fee Related
- 2005-11-28 IL IL172220A patent/IL172220A/en not_active IP Right Cessation
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2007
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5482570A (en) * | 1992-07-29 | 1996-01-09 | Asulab S.A. | Photovoltaic cell |
US6654161B2 (en) * | 1998-11-25 | 2003-11-25 | University Of Central Florida | Dispersed crystallite up-conversion displays |
Non-Patent Citations (1)
Title |
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See also references of EP1636853A4 * |
Also Published As
Publication number | Publication date |
---|---|
KR20060030039A (en) | 2006-04-07 |
WO2005001900A2 (en) | 2005-01-06 |
CN100527445C (en) | 2009-08-12 |
EP1636853A2 (en) | 2006-03-22 |
JP2007502031A (en) | 2007-02-01 |
US20060022139A1 (en) | 2006-02-02 |
IL172220A (en) | 2010-04-29 |
EP1636853A4 (en) | 2007-04-04 |
US20040253759A1 (en) | 2004-12-16 |
CN1806343A (en) | 2006-07-19 |
KR101118810B1 (en) | 2012-03-20 |
US6995371B2 (en) | 2006-02-07 |
US7193210B2 (en) | 2007-03-20 |
US20070138391A1 (en) | 2007-06-21 |
US7391024B2 (en) | 2008-06-24 |
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