WO2005010955A3 - Method and apparatus for real-time in-situ ion implantation with closed loop control - Google Patents

Method and apparatus for real-time in-situ ion implantation with closed loop control Download PDF

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Publication number
WO2005010955A3
WO2005010955A3 PCT/US2004/023420 US2004023420W WO2005010955A3 WO 2005010955 A3 WO2005010955 A3 WO 2005010955A3 US 2004023420 W US2004023420 W US 2004023420W WO 2005010955 A3 WO2005010955 A3 WO 2005010955A3
Authority
WO
WIPO (PCT)
Prior art keywords
real
time
implantation
ion implantation
closed loop
Prior art date
Application number
PCT/US2004/023420
Other languages
French (fr)
Other versions
WO2005010955A2 (en
Inventor
Kenneth Steeples
Original Assignee
Qc Solutions Inc
Kenneth Steeples
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qc Solutions Inc, Kenneth Steeples filed Critical Qc Solutions Inc
Publication of WO2005010955A2 publication Critical patent/WO2005010955A2/en
Publication of WO2005010955A3 publication Critical patent/WO2005010955A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Abstract

The invention relates to a method and apparatus for real-time in-situ implantation and measurement incorporating a feedback loop to adjust the implantation dose of a substrate during the manufacturing and testing of semiconductor wafers. During processing, the substrate, such as a silicon wafer, is transported between a measuring device and an implantation device multiple times to ensure that where the beam from the implantation device hits the substrate, the doping concentration falls within the range of desired parameters.
PCT/US2004/023420 2003-07-21 2004-07-20 Method and apparatus for real-time in-situ ion implantation with closed loop control WO2005010955A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48893503P 2003-07-21 2003-07-21
US60/488,935 2003-07-21

Publications (2)

Publication Number Publication Date
WO2005010955A2 WO2005010955A2 (en) 2005-02-03
WO2005010955A3 true WO2005010955A3 (en) 2005-08-11

Family

ID=34102806

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/023420 WO2005010955A2 (en) 2003-07-21 2004-07-20 Method and apparatus for real-time in-situ ion implantation with closed loop control

Country Status (3)

Country Link
US (1) US7160742B2 (en)
TW (1) TW200507149A (en)
WO (1) WO2005010955A2 (en)

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US20060114478A1 (en) * 2004-11-26 2006-06-01 Applied Materials, Inc. Evaluating effects of tilt angle in ion implantation
US20070187844A1 (en) 2006-02-10 2007-08-16 Wintec Industries, Inc. Electronic assembly with detachable components
US7928591B2 (en) * 2005-02-11 2011-04-19 Wintec Industries, Inc. Apparatus and method for predetermined component placement to a target platform
JP4875886B2 (en) * 2005-11-22 2012-02-15 株式会社日立ハイテクノロジーズ Charged particle beam equipment
US7816152B2 (en) * 2007-04-11 2010-10-19 WaferMaster, Inc. In situ, ex situ and inline process monitoring, optimization and fabrication
KR101588654B1 (en) * 2007-08-10 2016-01-27 퀀텀 글로벌 테크놀로지스, 엘엘씨 Methods and apparatus for ex situ seasoning of electronic device manufacturing process components
US7724003B1 (en) * 2007-09-07 2010-05-25 Kla-Tencor Corporation Substrate conditioning for corona charge control
FR2941816B1 (en) * 2009-02-05 2011-04-01 Commissariat Energie Atomique METHOD OF CHARACTERIZING A METHOD FOR ION IMPLANTATION
US9704714B2 (en) * 2015-04-16 2017-07-11 Taiwan Semiconductor Manufacturing Co., Ltd Method for controlling surface charge on wafer surface in semiconductor fabrication
CA2987315A1 (en) 2015-05-28 2016-12-01 Basf Se Polyurethanes with reduced aldehyde emission
US11264205B2 (en) 2019-12-06 2022-03-01 Applied Materials, Inc. Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633138A (en) * 1984-09-10 1986-12-30 Hitachi, Ltd. Ion implanter
JPH04334859A (en) * 1991-05-10 1992-11-20 Hitachi Ltd Scanning velocity control method for ion implantation
EP0686995A1 (en) * 1994-06-10 1995-12-13 Eaton Corporation An ion implantation device
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
EP0795888A2 (en) * 1996-03-15 1997-09-17 Applied Materials, Inc. Scanning method for an ion implanter and apparatus therefor
US5804981A (en) * 1996-05-07 1998-09-08 Advanced Micro Devices, Inc. Method of detecting heavy metal impurities introduced into a silicon wafer during ion implantation
US6157199A (en) * 1997-12-26 2000-12-05 Samsung Electronics Co., Ltd. Method of monitoring ion-implantation process using photothermal response from ion-implanted sample, and monitoring apparatus of ion-implantation process

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
US7160742B2 (en) 2007-01-09
US20050074909A1 (en) 2005-04-07
WO2005010955A2 (en) 2005-02-03
TW200507149A (en) 2005-02-16

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