WO2005020287A3 - Semiconductor device and method - Google Patents

Semiconductor device and method Download PDF

Info

Publication number
WO2005020287A3
WO2005020287A3 PCT/US2004/027019 US2004027019W WO2005020287A3 WO 2005020287 A3 WO2005020287 A3 WO 2005020287A3 US 2004027019 W US2004027019 W US 2004027019W WO 2005020287 A3 WO2005020287 A3 WO 2005020287A3
Authority
WO
WIPO (PCT)
Prior art keywords
bipolar transistor
base
emitter
collector
regions
Prior art date
Application number
PCT/US2004/027019
Other languages
French (fr)
Other versions
WO2005020287A2 (en
WO2005020287A9 (en
Inventor
Milton Feng
Nick Holonyak Jr
Walid Hafez
Original Assignee
Univ Illinois
Milton Feng
Nick Holonyak Jr
Walid Hafez
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/646,457 external-priority patent/US20050040432A1/en
Priority claimed from US10/861,103 external-priority patent/US7091082B2/en
Priority claimed from US10/861,320 external-priority patent/US7998807B2/en
Application filed by Univ Illinois, Milton Feng, Nick Holonyak Jr, Walid Hafez filed Critical Univ Illinois
Priority to EP04781659A priority Critical patent/EP1656701A4/en
Priority to JP2006524067A priority patent/JP2007503710A/en
Priority to CA002536329A priority patent/CA2536329A1/en
Publication of WO2005020287A2 publication Critical patent/WO2005020287A2/en
Publication of WO2005020287A9 publication Critical patent/WO2005020287A9/en
Publication of WO2005020287A3 publication Critical patent/WO2005020287A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Abstract

Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter (150), base (140), and collector (130) regions; providing electrodes (115, 145, 165) for coupling electrical signals with the emitter (150), base (140), and collector (130) regions; and adapting the base region (140) to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region (140).
PCT/US2004/027019 2003-08-22 2004-08-20 Semiconductor device and method WO2005020287A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP04781659A EP1656701A4 (en) 2003-08-22 2004-08-20 Semiconductor device and method
JP2006524067A JP2007503710A (en) 2003-08-22 2004-08-20 Semiconductor device and method
CA002536329A CA2536329A1 (en) 2003-08-22 2004-08-20 Semiconductor device and method

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US10/646,457 2003-08-22
US10/646,457 US20050040432A1 (en) 2003-08-22 2003-08-22 Light emitting device and method
US10/861,103 US7091082B2 (en) 2003-08-22 2004-06-04 Semiconductor method and device
US10/861,320 US7998807B2 (en) 2003-08-22 2004-06-04 Method for increasing the speed of a light emitting biopolar transistor device
US10/861,103 2004-06-04
US10/861,320 2004-06-04

Publications (3)

Publication Number Publication Date
WO2005020287A2 WO2005020287A2 (en) 2005-03-03
WO2005020287A9 WO2005020287A9 (en) 2005-03-31
WO2005020287A3 true WO2005020287A3 (en) 2005-05-06

Family

ID=34222410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/027019 WO2005020287A2 (en) 2003-08-22 2004-08-20 Semiconductor device and method

Country Status (5)

Country Link
EP (1) EP1656701A4 (en)
JP (1) JP2007503710A (en)
KR (1) KR20060063947A (en)
CA (1) CA2536329A1 (en)
WO (1) WO2005020287A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006317571A (en) * 2005-05-11 2006-11-24 Fuji Photo Film Co Ltd Optical compensation film, polarizing plate and liquid crystal display
US7535034B2 (en) 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
KR20070117238A (en) * 2006-06-08 2007-12-12 삼성전기주식회사 Semiconductor light emitting transistor
US7711015B2 (en) 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
CN100466313C (en) * 2007-05-21 2009-03-04 华南师范大学 Ppn-type light-emitting transistor and its manufacture method
US7953133B2 (en) 2007-10-12 2011-05-31 The Board Of Trustees Of The University Of Illinois Light emitting and lasing semiconductor devices and methods
US7813396B2 (en) 2007-10-12 2010-10-12 The Board Of Trustees Of The University Of Illinois Transistor laser devices and methods
EP2245676A1 (en) * 2008-01-21 2010-11-03 Insiava (Pty) Limited Semiconductor light emitting device utilising punch-through effects
JP5653934B2 (en) * 2009-01-08 2015-01-14 ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ Light emitting and laser semiconductor device and method
JP5739357B2 (en) * 2011-03-04 2015-06-24 日本電信電話株式会社 Heterojunction bipolar transistor
US9588310B2 (en) 2012-06-25 2017-03-07 Quantum Elctro Opto Systems Sdn Bhd. Method and apparatus for aligning of opto-electronic components
US8948226B2 (en) 2012-08-20 2015-02-03 The Board Of Trustees Of The University Of Illinois Semiconductor device and method for producing light and laser emission
US10874876B2 (en) * 2018-01-26 2020-12-29 International Business Machines Corporation Multiple light sources integrated in a neural probe for multi-wavelength activation
JP7216270B2 (en) * 2018-09-28 2023-02-01 日亜化学工業株式会社 semiconductor light emitting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239550A (en) * 1991-12-03 1993-08-24 University Of Connecticut Transistor lasers
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US5414273A (en) * 1993-03-05 1995-05-09 Mitsubishi Denki Kabushiki Kaisha Heterojunction bipolar transistor
US20020030195A1 (en) * 2000-07-04 2002-03-14 Shigeo Yoshii Semiconductor light-emitting device and apparatus for driving the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231788A (en) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd Semiconductor light emitting element
JPH04237135A (en) * 1991-01-21 1992-08-25 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laminated layer structure
JP2853432B2 (en) * 1992-01-08 1999-02-03 日本電気株式会社 Semiconductor optical integrated device
SE511314C2 (en) * 1997-02-07 1999-09-06 Ericsson Telefon Ab L M Preparation of heterobipolar transistor and laser diode on the same substrate
JP2002164352A (en) * 2000-09-13 2002-06-07 Toshiba Corp Bipolar transistor, semiconductor light-emitting device, and semiconductor device
JP2002190448A (en) * 2000-12-20 2002-07-05 Fujitsu Ltd Substrate, electronic device, and their manufacturing method
FR2820890A1 (en) * 2001-02-15 2002-08-16 Cit Alcatel MONOLITHIC INTEGRATED OPTICAL COMPONENT HAVING A BIPOLAR HETEROJUNCTION TRANSISTOR

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239550A (en) * 1991-12-03 1993-08-24 University Of Connecticut Transistor lasers
US5414273A (en) * 1993-03-05 1995-05-09 Mitsubishi Denki Kabushiki Kaisha Heterojunction bipolar transistor
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US20020030195A1 (en) * 2000-07-04 2002-03-14 Shigeo Yoshii Semiconductor light-emitting device and apparatus for driving the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1656701A4 *

Also Published As

Publication number Publication date
CA2536329A1 (en) 2005-03-03
WO2005020287A2 (en) 2005-03-03
EP1656701A4 (en) 2007-10-10
WO2005020287A9 (en) 2005-03-31
JP2007503710A (en) 2007-02-22
EP1656701A2 (en) 2006-05-17
KR20060063947A (en) 2006-06-12

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