WO2005022639A3 - Gallium nitride material devices and methods of forming the same - Google Patents

Gallium nitride material devices and methods of forming the same Download PDF

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Publication number
WO2005022639A3
WO2005022639A3 PCT/US2004/027657 US2004027657W WO2005022639A3 WO 2005022639 A3 WO2005022639 A3 WO 2005022639A3 US 2004027657 W US2004027657 W US 2004027657W WO 2005022639 A3 WO2005022639 A3 WO 2005022639A3
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Prior art keywords
gallium nitride
nitride material
methods
forming
same
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PCT/US2004/027657
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French (fr)
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WO2005022639A2 (en
Inventor
T Warren Weeks
Kevin J Linthicum
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Nitronex Corp
T Warren Weeks
Kevin J Linthicum
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Application filed by Nitronex Corp, T Warren Weeks, Kevin J Linthicum filed Critical Nitronex Corp
Publication of WO2005022639A2 publication Critical patent/WO2005022639A2/en
Publication of WO2005022639A3 publication Critical patent/WO2005022639A3/en

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    • H01L33/26—Materials of the light emitting region
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    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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Abstract

The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.
PCT/US2004/027657 2003-08-25 2004-08-25 Gallium nitride material devices and methods of forming the same WO2005022639A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/650,122 US7233028B2 (en) 2001-02-23 2003-08-25 Gallium nitride material devices and methods of forming the same
US10/650,122 2003-08-25

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WO2005022639A2 WO2005022639A2 (en) 2005-03-10
WO2005022639A3 true WO2005022639A3 (en) 2006-01-19

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US7838997B2 (en) 2005-06-14 2010-11-23 John Trezza Remote chip attachment
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