WO2005026749A1 - Current sensor - Google Patents
Current sensor Download PDFInfo
- Publication number
- WO2005026749A1 WO2005026749A1 PCT/US2004/009908 US2004009908W WO2005026749A1 WO 2005026749 A1 WO2005026749 A1 WO 2005026749A1 US 2004009908 W US2004009908 W US 2004009908W WO 2005026749 A1 WO2005026749 A1 WO 2005026749A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductor portion
- substrate
- current conductor
- integrated circuit
- hall effect
- Prior art date
Links
- 239000004020 conductor Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 230000004907 flux Effects 0.000 claims description 35
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 16
- 230000005355 Hall effect Effects 0.000 description 136
- 230000004044 response Effects 0.000 description 24
- 239000012212 insulator Substances 0.000 description 13
- 230000008901 benefit Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/207—Constructional details independent of the type of device used
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006524610A JP4757195B2 (en) | 2003-08-26 | 2004-03-29 | Current sensor |
EP04816162A EP1658508B1 (en) | 2003-08-26 | 2004-03-29 | Current sensor |
AT04816162T ATE469356T1 (en) | 2003-08-26 | 2004-03-29 | CURRENT SENSOR |
DE602004027389T DE602004027389D1 (en) | 2003-08-26 | 2004-03-29 | CURRENT SENSOR |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/649,450 US7709754B2 (en) | 2003-08-26 | 2003-08-26 | Current sensor |
US10/649,450 | 2003-08-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005026749A1 true WO2005026749A1 (en) | 2005-03-24 |
Family
ID=34216957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/009908 WO2005026749A1 (en) | 2003-08-26 | 2004-03-29 | Current sensor |
Country Status (8)
Country | Link |
---|---|
US (1) | US7709754B2 (en) |
EP (1) | EP1658508B1 (en) |
JP (4) | JP4757195B2 (en) |
KR (1) | KR101008311B1 (en) |
CN (1) | CN1842711A (en) |
AT (1) | ATE469356T1 (en) |
DE (1) | DE602004027389D1 (en) |
WO (1) | WO2005026749A1 (en) |
Cited By (20)
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US7476816B2 (en) | 2003-08-26 | 2009-01-13 | Allegro Microsystems, Inc. | Current sensor |
US7598601B2 (en) | 2003-08-26 | 2009-10-06 | Allegro Microsystems, Inc. | Current sensor |
US7709754B2 (en) | 2003-08-26 | 2010-05-04 | Allegro Microsystems, Inc. | Current sensor |
US8080994B2 (en) | 2006-05-12 | 2011-12-20 | Allegro Microsystems, Inc. | Integrated current sensor |
EP2437072A2 (en) | 2010-10-01 | 2012-04-04 | Melexis Technologies NV | Current sensor |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
EP2775311A2 (en) | 2013-03-08 | 2014-09-10 | Melexis Technologies NV | Current sensor |
EP2801832A2 (en) | 2013-05-07 | 2014-11-12 | Melexis Technologies NV | Device for current measurement |
US9190606B2 (en) | 2013-03-15 | 2015-11-17 | Allegro Micosystems, LLC | Packaging for an electronic device |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
EP3185019A1 (en) | 2015-12-23 | 2017-06-28 | Melexis Technologies SA | Method of making a current sensor and current sensor |
US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
EP3333580A1 (en) | 2016-12-12 | 2018-06-13 | Melexis Technologies SA | Integrated current sensor and method for making such a sensor |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US10345343B2 (en) | 2013-03-15 | 2019-07-09 | Allegro Microsystems, Llc | Current sensor isolation |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
US11768230B1 (en) | 2022-03-30 | 2023-09-26 | Allegro Microsystems, Llc | Current sensor integrated circuit with a dual gauge lead frame |
US11800813B2 (en) | 2020-05-29 | 2023-10-24 | Allegro Microsystems, Llc | High isolation current sensor |
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US7259545B2 (en) * | 2003-02-11 | 2007-08-21 | Allegro Microsystems, Inc. | Integrated sensor |
US6995315B2 (en) * | 2003-08-26 | 2006-02-07 | Allegro Microsystems, Inc. | Current sensor |
US7075287B1 (en) | 2003-08-26 | 2006-07-11 | Allegro Microsystems, Inc. | Current sensor |
US7166807B2 (en) | 2003-08-26 | 2007-01-23 | Allegro Microsystems, Inc. | Current sensor |
AU2006246275B2 (en) * | 2005-05-12 | 2010-12-23 | Corporation Nuvolt Inc. | Current sensor |
US7358724B2 (en) | 2005-05-16 | 2008-04-15 | Allegro Microsystems, Inc. | Integrated magnetic flux concentrator |
US7483248B1 (en) * | 2005-05-19 | 2009-01-27 | Sun Microsystems, Inc. | Method and apparatus for detecting current changes in integrated circuits |
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US7768083B2 (en) * | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
US7816905B2 (en) * | 2008-06-02 | 2010-10-19 | Allegro Microsystems, Inc. | Arrangements for a current sensing circuit and integrated current sensor |
US7936164B2 (en) * | 2008-07-03 | 2011-05-03 | Allegro Microsystems, Inc. | Folding current sensor |
US8093670B2 (en) * | 2008-07-24 | 2012-01-10 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions |
US8063634B2 (en) * | 2008-07-31 | 2011-11-22 | Allegro Microsystems, Inc. | Electronic circuit and method for resetting a magnetoresistance element |
US9222992B2 (en) | 2008-12-18 | 2015-12-29 | Infineon Technologies Ag | Magnetic field current sensors |
US8101955B2 (en) * | 2009-04-17 | 2012-01-24 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | PLCC package with a reflector cup surrounded by an encapsulant |
US8089075B2 (en) * | 2009-04-17 | 2012-01-03 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | LFCC package with a reflector cup surrounded by a single encapsulant |
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US20110006763A1 (en) * | 2009-07-07 | 2011-01-13 | Anthonius Bakker | Hall effect current sensor system and associated flip-chip packaging |
US20110133732A1 (en) * | 2009-12-03 | 2011-06-09 | Allegro Microsystems, Inc. | Methods and apparatus for enhanced frequency response of magnetic sensors |
US8717016B2 (en) | 2010-02-24 | 2014-05-06 | Infineon Technologies Ag | Current sensors and methods |
US8760149B2 (en) | 2010-04-08 | 2014-06-24 | Infineon Technologies Ag | Magnetic field current sensors |
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WO1999014605A1 (en) * | 1997-09-15 | 1999-03-25 | Institute Of Quantum Electronics | A current monitor system and a method for manufacturing it |
EP1107328A2 (en) * | 1999-12-09 | 2001-06-13 | Sanken Electric Co., Ltd. | Current detector having a hall-effect device |
EP1111693A2 (en) * | 1999-12-20 | 2001-06-27 | Sanken Electric Co., Ltd. | Large current detector having a Hall-effect device |
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Also Published As
Publication number | Publication date |
---|---|
ATE469356T1 (en) | 2010-06-15 |
JP5981633B2 (en) | 2016-08-31 |
JP2013079973A (en) | 2013-05-02 |
KR20060061825A (en) | 2006-06-08 |
JP2007503584A (en) | 2007-02-22 |
EP1658508A1 (en) | 2006-05-24 |
US7709754B2 (en) | 2010-05-04 |
JP2009210589A (en) | 2009-09-17 |
DE602004027389D1 (en) | 2010-07-08 |
KR101008311B1 (en) | 2011-01-14 |
JP2016065882A (en) | 2016-04-28 |
US20050045359A1 (en) | 2005-03-03 |
CN1842711A (en) | 2006-10-04 |
EP1658508B1 (en) | 2010-05-26 |
JP4757195B2 (en) | 2011-08-24 |
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