WO2005029580A3 - Connector - Google Patents

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Publication number
WO2005029580A3
WO2005029580A3 PCT/US2004/029916 US2004029916W WO2005029580A3 WO 2005029580 A3 WO2005029580 A3 WO 2005029580A3 US 2004029916 W US2004029916 W US 2004029916W WO 2005029580 A3 WO2005029580 A3 WO 2005029580A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor devices
coating material
formation cavity
mold
cured
Prior art date
Application number
PCT/US2004/029916
Other languages
French (fr)
Other versions
WO2005029580A2 (en
Inventor
Michael S Leung
Eric J Tarsa
James Ibbetson
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Priority to EP20156945.6A priority Critical patent/EP3667708A1/en
Priority to EP04783941.0A priority patent/EP1665361B1/en
Priority to JP2006526964A priority patent/JP5431646B2/en
Publication of WO2005029580A2 publication Critical patent/WO2005029580A2/en
Publication of WO2005029580A3 publication Critical patent/WO2005029580A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
    • H01L2224/251—Disposition
    • H01L2224/2518—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Abstract

A method and apparatus (50) for coating a plurality of semiconductor devices (55) that is particularly adapted to coating LEDs (55) with a coating material (70) containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity (68). A plurality of semiconductor devices (55) are mounted within the mold formation cavity (68) and a curable coating material (70) is injected or otherwise introduced into the mold to fill the mold formation cavity (68) and at least partially cover the semiconductor devices (55). The coating material (70) is cured so that the semiconductor devices (55) are at least partially embedded in the cured coating material. The cured coating material (70) with the embedded semiconductor devices is removed from the formation cavity (68). The semiconductor devices (55) are separated so that each is at least partially covered by a layer of the cured coating material (70). One embodiment of an apparatus (50) according to the invention for coating a plurality of semiconductor devices comprises a mol housing (51) having a formation cavity (68) arranged to hold semiconductor devices (55), The formation cavity (68) is also arranged so that a durable coating material (70) can be injected into and fills the formation cavity (68) to at least partially covering the semiconductor devices (55).
PCT/US2004/029916 2003-09-18 2004-09-13 Connector WO2005029580A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP20156945.6A EP3667708A1 (en) 2003-09-18 2004-09-13 Method for encapsulating light emitting diodes
EP04783941.0A EP1665361B1 (en) 2003-09-18 2004-09-13 Method for encapsulating light emitting diodes
JP2006526964A JP5431646B2 (en) 2003-09-18 2004-09-13 Molded chip manufacturing method and apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/666,399 2003-09-18
US10/666,399 US7915085B2 (en) 2003-09-18 2003-09-18 Molded chip fabrication method

Publications (2)

Publication Number Publication Date
WO2005029580A2 WO2005029580A2 (en) 2005-03-31
WO2005029580A3 true WO2005029580A3 (en) 2006-05-18

Family

ID=34313104

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/029916 WO2005029580A2 (en) 2003-09-18 2004-09-13 Connector

Country Status (5)

Country Link
US (6) US7915085B2 (en)
EP (2) EP1665361B1 (en)
JP (3) JP5431646B2 (en)
TW (1) TWI358837B (en)
WO (1) WO2005029580A2 (en)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
TWI275189B (en) * 2003-12-30 2007-03-01 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US8563339B2 (en) * 2005-08-25 2013-10-22 Cree, Inc. System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
US20070045643A1 (en) * 2005-08-29 2007-03-01 Shih-Lung Liu Substrate-based white light diode
JP5308618B2 (en) * 2006-04-26 2013-10-09 日亜化学工業株式会社 Semiconductor light emitting device
DE202006007482U1 (en) * 2006-05-10 2006-07-20 Sentner, Thomas light furniture
JP2009538531A (en) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド LIGHTING DEVICE AND MANUFACTURING METHOD
CN101174058A (en) * 2006-10-30 2008-05-07 鸿富锦精密工业（深圳）有限公司 Back light module unit and method for producing the same
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
WO2009012287A1 (en) * 2007-07-17 2009-01-22 Cree Led Lighting Solutions, Inc. Optical elements with internal optical features and methods of fabricating same
EP2223352B8 (en) * 2007-12-11 2018-08-29 Lumileds Holding B.V. Side emitting device with hybrid top reflector
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
DE102008010512A1 (en) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelectronic component, particularly light emitting diode or photodiode, has semiconductor chip with chip lower side, and two electrical bondings with contact lower sides
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US8236582B2 (en) * 2008-07-24 2012-08-07 Philips Lumileds Lighting Company, Llc Controlling edge emission in package-free LED die
US20100279437A1 (en) * 2009-05-01 2010-11-04 Koninklijke Philips Electronics N.V. Controlling edge emission in package-free led die
EP2335295B1 (en) * 2008-09-25 2021-01-20 Lumileds LLC Coated light emitting device and method of coating thereof
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
TWI381556B (en) * 2009-03-20 2013-01-01 Everlight Electronics Co Ltd Light emitting diode package structure and manufacturing method thereof
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
DE102009035100A1 (en) * 2009-07-29 2011-02-03 Osram Opto Semiconductors Gmbh Light-emitting diode and conversion element for a light-emitting diode
TWI385782B (en) * 2009-09-10 2013-02-11 Lextar Electronics Corp White light illuminating device
JP5468349B2 (en) * 2009-10-22 2014-04-09 シチズンホールディングス株式会社 Manufacturing method of LED light source device
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US9373606B2 (en) 2010-08-30 2016-06-21 Bridgelux, Inc. Light-emitting device array with individual cells
US8937324B2 (en) * 2010-08-30 2015-01-20 Bridgelux, Inc. Light-emitting device array with individual cells
US9515229B2 (en) * 2010-09-21 2016-12-06 Cree, Inc. Semiconductor light emitting devices with optical coatings and methods of making same
CN102487110A (en) * 2010-12-03 2012-06-06 展晶科技(深圳)有限公司 Light-emitting diode (LED) packaging method
KR101725220B1 (en) 2010-12-22 2017-04-10 삼성전자 주식회사 Method of depositing phosphor on semiconductor light emitting device and an apparatus for depositing phosphor on semiconductor light emitting device
EP2666193B1 (en) * 2011-01-17 2020-07-29 Lumileds Holding B.V. Led package comprising encapsulation
US9166126B2 (en) * 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
DE102011102590A1 (en) * 2011-05-27 2012-11-29 Osram Opto Semiconductors Gmbh Method for producing light-emitting diode components
KR101330592B1 (en) * 2011-06-07 2013-11-18 도레이 카부시키가이샤 Resin sheet laminated body, method for producing same, and method for producing led chip with phosphor-containing resin sheet using same
KR20130083207A (en) * 2012-01-12 2013-07-22 삼성전자주식회사 Method of forming phosphor layer on light emitting device chip wafer using wafer lavel mold
CN104066814B (en) * 2012-01-19 2017-06-16 纳米技术有限公司 For the molding nano-particle phosphor of the application that lights
US9343383B2 (en) * 2012-03-02 2016-05-17 Cree, Inc. High voltage semiconductor devices including electric arc suppression material and methods of forming the same
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
US9159643B2 (en) * 2012-09-14 2015-10-13 Freescale Semiconductor, Inc. Matrix lid heatspreader for flip chip package
US8921994B2 (en) 2012-09-14 2014-12-30 Freescale Semiconductor, Inc. Thermally enhanced package with lid heat spreader
KR101968637B1 (en) * 2012-12-07 2019-04-12 삼성전자주식회사 Flexible semiconductor device and method of manufacturing the same
KR20230148383A (en) * 2014-09-19 2023-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Secondary battery
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
CN106328008B (en) * 2015-06-30 2019-03-22 光宝光电(常州)有限公司 Colloid is filled to the preparation method of shell, the digital display of light emitting diode and preparation method
DE102015114849B4 (en) * 2015-09-04 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for the production of light-emitting diode filaments and light-emitting diode filament
EP3327755A1 (en) * 2016-10-10 2018-05-30 Shenzhen Goodix Technology Co., Ltd. Chip packaging structure and chip packaging method
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
CN106449945B (en) * 2016-12-07 2019-03-26 湘能华磊光电股份有限公司 Make the method for injection molding of CSP chip
DE102017215797B4 (en) * 2017-09-07 2023-09-21 Infineon Technologies Ag Method for producing packaged semiconductor devices
US10170304B1 (en) 2017-10-25 2019-01-01 Globalfoundries Inc. Self-aligned nanotube structures
KR101977261B1 (en) * 2017-11-03 2019-05-13 엘지전자 주식회사 Phosphor module
CN112234070B (en) * 2019-06-27 2022-12-13 成都辰显光电有限公司 Display panel, display device and manufacturing method of display panel

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087202A (en) * 1997-06-03 2000-07-11 Stmicroelectronics S.A. Process for manufacturing semiconductor packages comprising an integrated circuit
JP2000208820A (en) * 1999-01-14 2000-07-28 Stanley Electric Co Ltd Light emitting diode and its manufacture
US20020001869A1 (en) * 1997-02-18 2002-01-03 Joseph Fjelstad Semiconductor package having light sensitive chips
JP2002009097A (en) * 2000-06-22 2002-01-11 Oki Electric Ind Co Ltd Semiconductor device and method of manufacturing the same
US6338813B1 (en) * 1999-10-15 2002-01-15 Advanced Semiconductor Engineering, Inc. Molding method for BGA semiconductor chip package
EP1198005A1 (en) * 1999-03-26 2002-04-17 Hitachi, Ltd. Semiconductor module and method of mounting
US20020096789A1 (en) * 2001-01-23 2002-07-25 Bolken Todd O. Semiconductor assembly encapsulation mold

Family Cites Families (362)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US66861A (en) * 1867-07-16 Impeoyed lasd-eqllee and marieb
US468832A (en) * 1892-02-16 Corn-harvester
US333522A (en) * 1886-01-05 Feanklin e
US257737A (en) * 1882-05-09 Gate-holder
US566639A (en) * 1896-08-25 werner
US720259A (en) * 1902-07-29 1903-02-10 Christopher Kuenzel Stem winding and setting watch.
US813753A (en) * 1905-05-24 1906-02-27 Sieber & Trussell Mnfg Co Loose-leaf binder.
US959316A (en) * 1908-01-02 1910-05-24 Edmund Dawes Spinning and twisting machine.
US924233A (en) * 1908-06-16 1909-06-08 Aage Jensen Apparatus for heating and cooling liquids.
US3780357A (en) 1973-02-16 1973-12-18 Hewlett Packard Co Electroluminescent semiconductor display apparatus and method of fabricating the same
NL162469C (en) * 1975-01-23 1980-05-16 Schelde Nv METHOD FOR WELDING A PIPE TO A PIPE PLATE
JPS5479985A (en) 1977-12-09 1979-06-26 Tokyo Shibaura Electric Co Ultrasonic scanning device
JPS5927559Y2 (en) 1979-06-08 1984-08-09 才市 岡本 Vibration isolator
JPS5927559B2 (en) 1980-05-14 1984-07-06 株式会社村田製作所 electroacoustic transformer
JPS5752072A (en) * 1980-09-16 1982-03-27 Tokyo Shibaura Electric Co Display unit
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
JPS5927559A (en) 1982-08-07 1984-02-14 Mitsubishi Electric Corp Semiconductor device package
JPS5939124A (en) 1982-08-27 1984-03-03 Toshiba Corp Cmos logical circuit
US4587729A (en) * 1982-09-17 1986-05-13 The Gillette Company Safety razor
US4576796A (en) 1984-01-18 1986-03-18 Pelam, Inc. Centrifugal tissue processor
JPS6148951A (en) 1984-08-16 1986-03-10 Toshiba Corp Semiconductor device
JPS6148951U (en) 1984-08-29 1986-04-02
US4853010A (en) * 1984-09-12 1989-08-01 Spence Billy F Multi stage gas scrubber
US4733335A (en) * 1984-12-28 1988-03-22 Koito Manufacturing Co., Ltd. Vehicular lamp
JPS6227559A (en) 1985-07-29 1987-02-05 Hitachi Cable Ltd Manufacture of hot dip tin coated copper wire
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4935665A (en) * 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
CA1337918C (en) 1988-03-16 1996-01-16 Norihisa Osaka Phosphor paste compositions and phosphor coatings obtained therefrom
JPH0261821A (en) 1988-08-25 1990-03-01 Victor Co Of Japan Ltd Magnetic recording medium
JP2558840B2 (en) * 1988-09-22 1996-11-27 関西日本電気株式会社 Molded diode and manufacturing method thereof
JPH065290Y2 (en) 1988-10-28 1994-02-09 株式会社サンゲツ Work information reading device
US4918497A (en) 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5027168A (en) 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4966862A (en) 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
FR2666147B1 (en) 1990-08-27 1992-10-16 Inst Francais Du Petrole MEASUREMENT OF THE DISTRIBUTION OF THE CONCENTRATIONS OF CONSTITUENTS OF A CENTRIFUGATION SYSTEM BY TRANSMISSION / RECEPTION OF MECHANICAL SIGNALS.
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5265792A (en) * 1992-08-20 1993-11-30 Hewlett-Packard Company Light source and technique for mounting light emitting diodes
FR2704690B1 (en) 1993-04-27 1995-06-23 Thomson Csf Method for encapsulating semiconductor wafers, device obtained by this process and application to the interconnection of wafers in three dimensions.
US5414342A (en) * 1993-04-29 1995-05-09 Unitrode Corporation Voltage mode pulse width modulation controller
US5416342A (en) 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5604135A (en) 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
DE19509262C2 (en) 1995-03-15 2001-11-29 Siemens Ag Semiconductor component with plastic sheathing and method for its production
US5614131A (en) * 1995-05-01 1997-03-25 Motorola, Inc. Method of making an optoelectronic device
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6056421A (en) 1995-08-25 2000-05-02 Michael Brian Johnson Architectural lighting devices with photosensitive lens
US5766987A (en) * 1995-09-22 1998-06-16 Tessera, Inc. Microelectronic encapsulation methods and equipment
DE19536438A1 (en) * 1995-09-29 1997-04-03 Siemens Ag Semiconductor device and manufacturing process
TW412744B (en) 1996-02-13 2000-11-21 Dainippon Printing Co Ltd Device with display portion capable of rewriting
JP2947156B2 (en) 1996-02-29 1999-09-13 双葉電子工業株式会社 Phosphor manufacturing method
US5926359A (en) * 1996-04-01 1999-07-20 International Business Machines Corporation Metal-insulator-metal capacitor
US6001671A (en) * 1996-04-18 1999-12-14 Tessera, Inc. Methods for manufacturing a semiconductor package having a sacrificial layer
JP3350354B2 (en) 1996-06-03 2002-11-25 松下電器産業株式会社 Monochrome CRT phosphor screen forming method
US5803579A (en) * 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
KR100662955B1 (en) 1996-06-26 2006-12-28 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 Light-emitting semiconductor component with luminescence conversion element
DE19638667C2 (en) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
JP3751587B2 (en) * 1996-07-12 2006-03-01 富士通株式会社 Manufacturing method of semiconductor device
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JP3065258B2 (en) 1996-09-30 2000-07-17 日亜化学工業株式会社 Light emitting device and display device using the same
JPH10150223A (en) * 1996-11-15 1998-06-02 Rohm Co Ltd Chip-type light emitting device
JP3448441B2 (en) 1996-11-29 2003-09-22 三洋電機株式会社 Light emitting device
US5833903A (en) * 1996-12-10 1998-11-10 Great American Gumball Corporation Injection molding encapsulation for an electronic device directly onto a substrate
US6274890B1 (en) 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
JP3492178B2 (en) 1997-01-15 2004-02-03 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
US6333522B1 (en) 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
JP3246386B2 (en) 1997-03-05 2002-01-15 日亜化学工業株式会社 Light emitting diode and color conversion mold member for light emitting diode
JP3351706B2 (en) 1997-05-14 2002-12-03 株式会社東芝 Semiconductor device and method of manufacturing the same
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
JP3617587B2 (en) 1997-07-17 2005-02-09 日亜化学工業株式会社 Light emitting diode and method for forming the same
JPH1187778A (en) 1997-09-02 1999-03-30 Toshiba Corp Semiconductor light emitting element, semiconductor light emitting device and manufacture thereof
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
CN2310925Y (en) 1997-09-26 1999-03-17 陈兴 Structure of light emitting diode
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6350704B1 (en) * 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
US6495083B2 (en) 1997-10-29 2002-12-17 Hestia Technologies, Inc. Method of underfilling an integrated circuit chip
TW408497B (en) * 1997-11-25 2000-10-11 Matsushita Electric Works Ltd LED illuminating apparatus
DE69839300T2 (en) 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Light-emitting device
US6580097B1 (en) 1998-02-06 2003-06-17 General Electric Company Light emitting device with phosphor composition
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
JPH11276932A (en) 1998-03-30 1999-10-12 Japan Tobacco Inc Centrifugal separator
US6329224B1 (en) * 1998-04-28 2001-12-11 Tessera, Inc. Encapsulation of microelectronic assemblies
US6504180B1 (en) 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
JP2000053532A (en) * 1998-08-04 2000-02-22 Shiseido Co Ltd Beatifying
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP3724620B2 (en) 1998-09-29 2005-12-07 シャープ株式会社 Manufacturing method of light emitting diode
US6404125B1 (en) * 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6366018B1 (en) 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US5988925A (en) * 1998-10-26 1999-11-23 Baggett; R. Sherman Stacked paper fastener
US6184465B1 (en) * 1998-11-12 2001-02-06 Micron Technology, Inc. Semiconductor package
US6307218B1 (en) 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
JP3775081B2 (en) 1998-11-27 2006-05-17 松下電器産業株式会社 Semiconductor light emitting device
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
US6339304B1 (en) * 1998-12-18 2002-01-15 Graco Children's Products Inc. Swing control for altering power to drive motor after each swing cycle
JP2000208822A (en) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp Semiconductor light-emitting device
JP3033576B1 (en) 1999-02-18 2000-04-17 日本電気株式会社 Semiconductor device and method of manufacturing semiconductor device
JP3494586B2 (en) 1999-03-26 2004-02-09 アピックヤマダ株式会社 Resin sealing device and resin sealing method
US6784541B2 (en) * 2000-01-27 2004-08-31 Hitachi, Ltd. Semiconductor module and mounting method for same
US6699492B2 (en) 1999-03-31 2004-03-02 Insite Vision Incorporated Quinolone carboxylic acid compositions and related methods of treatment
JP2000299334A (en) * 1999-04-14 2000-10-24 Apic Yamada Corp Resin-sealing apparatus
DE19918370B4 (en) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED white light source with lens
US6257737B1 (en) 1999-05-20 2001-07-10 Philips Electronics Na Low-profile luminaire having a reflector for mixing light from a multi-color linear array of LEDs
JP3337000B2 (en) 1999-06-07 2002-10-21 サンケン電気株式会社 Semiconductor light emitting device
EP1059678A2 (en) 1999-06-09 2000-12-13 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP3675234B2 (en) 1999-06-28 2005-07-27 豊田合成株式会社 Manufacturing method of semiconductor light emitting device
US6274690B1 (en) 1999-08-11 2001-08-14 Shin-Etsu Chemical Co., Ltd. Preparation of vinyl chloride polymer
JP2001064937A (en) 1999-08-31 2001-03-13 Seni Doboku Kaihatsu Kk Gabion work for civil engineering work, protection work using the same, and filling method for filler
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
KR20010044907A (en) 1999-11-01 2001-06-05 김순택 Phosphor screen representing high brightness in a low voltage and manufacturing method thereof
DE19955747A1 (en) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optical semiconductor device with multiple quantum well structure, e.g. LED, has alternate well layers and barrier layers forming super-lattices
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6666567B1 (en) * 1999-12-28 2003-12-23 Honeywell International Inc. Methods and apparatus for a light source with a raised LED structure
US6406991B2 (en) 1999-12-27 2002-06-18 Hoya Corporation Method of manufacturing a contact element and a multi-layered wiring substrate, and wafer batch contact board
DE19963806C2 (en) * 1999-12-30 2002-02-07 Osram Opto Semiconductors Gmbh Process for producing a light-emitting diode white light source, use of a plastic molding compound for producing a light-emitting diode white light source and surface-mountable light-emitting diode white light source
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
DE10010638A1 (en) 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Making light emitting semiconducting body with luminescence conversion element involves applying suspension with solvent, adhesive, luminescent material
US6793371B2 (en) * 2000-03-09 2004-09-21 Mongo Light Co. Inc. LED lamp assembly
US6522065B1 (en) 2000-03-27 2003-02-18 General Electric Company Single phosphor for creating white light with high luminosity and high CRI in a UV led device
US7121925B2 (en) 2000-03-31 2006-10-17 Toyoda Gosei Co., Ltd. Method for dicing semiconductor wafer into chips
JP4810746B2 (en) 2000-03-31 2011-11-09 豊田合成株式会社 Group III nitride compound semiconductor device
US6653765B1 (en) 2000-04-17 2003-11-25 General Electric Company Uniform angular light distribution from LEDs
JP4403631B2 (en) 2000-04-24 2010-01-27 ソニー株式会社 Manufacturing method of chip-shaped electronic component and manufacturing method of pseudo wafer used for manufacturing the same
US6878563B2 (en) 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
JP2001319928A (en) * 2000-05-08 2001-11-16 Hitachi Ltd Semiconductor integrated circuit device and manufacturing method therefor
US6501100B1 (en) 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
US6621211B1 (en) 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
GB0013394D0 (en) * 2000-06-01 2000-07-26 Microemissive Displays Ltd A method of creating a color optoelectronic device
JP2002018293A (en) 2000-07-06 2002-01-22 Nippon Steel Chem Co Ltd Cation exchange resin
DE10033502A1 (en) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Optoelectronic module, process for its production and its use
US6468832B1 (en) 2000-07-19 2002-10-22 National Semiconductor Corporation Method to encapsulate bumped integrated circuit to create chip scale package
JP3589187B2 (en) 2000-07-31 2004-11-17 日亜化学工業株式会社 Method for forming light emitting device
JP2002050799A (en) 2000-08-04 2002-02-15 Stanley Electric Co Ltd Led lamp and manufacturing method therefor
US20020033486A1 (en) * 2000-08-04 2002-03-21 Samsung Electronics Co., Ltd. Method for forming an interconnection line using a hydrosilsesquioxane (HSQ) layer as an interlayer insulating layer
US20020024299A1 (en) * 2000-08-09 2002-02-28 Tadahiro Okazaki Chip-type light-emitting device
US6537912B1 (en) * 2000-08-25 2003-03-25 Micron Technology Inc. Method of forming an encapsulated conductive pillar
JP2002076196A (en) * 2000-08-25 2002-03-15 Nec Kansai Ltd Chip type semiconductor device and its manufacturing method
ES2333201T3 (en) 2000-08-31 2010-02-18 Basf Se BUTINOL 1 ESTERASE.
JP2002076445A (en) 2000-09-01 2002-03-15 Sanken Electric Co Ltd Semiconductor light emitting device
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
JP2002093830A (en) * 2000-09-14 2002-03-29 Sony Corp Manufacturing method of chip-like electronic component, and manufacturing method of pseudo-wafer used for the manufacturing method
JP2002101147A (en) 2000-09-26 2002-04-05 Hitachi Kokusai Electric Inc Communication system
US6833604B2 (en) * 2000-10-03 2004-12-21 Broadcom Corporation High density metal capacitor using dual-damascene copper interconnect
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
DE10051242A1 (en) 2000-10-17 2002-04-25 Philips Corp Intellectual Pty Light-emitting device with coated phosphor
JP2002161325A (en) 2000-11-20 2002-06-04 Ulvac Japan Ltd Aluminum alloy, hydrogen gas generation method, hydrogen gas generator, and electric generator
US6889088B2 (en) * 2000-11-20 2005-05-03 Bassem M. Demian Bunion treating device
US20020063520A1 (en) 2000-11-29 2002-05-30 Huei-Che Yu Pre-formed fluorescent plate - LED device
JP3614776B2 (en) 2000-12-19 2005-01-26 シャープ株式会社 Chip component type LED and its manufacturing method
JP5110744B2 (en) * 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Light emitting device and manufacturing method thereof
JP2002208822A (en) 2000-12-28 2002-07-26 Tamura Seisakusho Co Ltd Electronic circuit and sound output device
JP2002280607A (en) 2001-01-10 2002-09-27 Toyoda Gosei Co Ltd Light emitting device
AUPR245601A0 (en) * 2001-01-10 2001-02-01 Silverbrook Research Pty Ltd An apparatus (WSM09)
MY145695A (en) 2001-01-24 2012-03-30 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US6891200B2 (en) 2001-01-25 2005-05-10 Matsushita Electric Industrial Co., Ltd. Light-emitting unit, light-emitting unit assembly, and lighting apparatus produced using a plurality of light-emitting units
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
TW516247B (en) 2001-02-26 2003-01-01 Arima Optoelectronics Corp Light emitting diode with light conversion using scattering optical media
JP4081985B2 (en) * 2001-03-02 2008-04-30 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
US6661167B2 (en) 2001-03-14 2003-12-09 Gelcore Llc LED devices
US20020132471A1 (en) * 2001-03-16 2002-09-19 International Business Machines Corporation High modulus film structure for enhanced electromigration resistance
US6486059B2 (en) * 2001-04-19 2002-11-26 Silicon Intergrated Systems Corp. Dual damascene process using an oxide liner for a dielectric barrier layer
JP2002319704A (en) 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Led chip
CN1220283C (en) 2001-04-23 2005-09-21 松下电工株式会社 Ligth emitting device comprising LED chip
US6686676B2 (en) 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
US6531358B1 (en) * 2001-05-09 2003-03-11 Taiwan Semiconductor Manufacturing Company Method of fabricating capacitor-under-bit line (CUB) DRAM
US6861347B2 (en) * 2001-05-17 2005-03-01 Samsung Electronics Co., Ltd. Method for forming metal wiring layer of semiconductor device
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US6576488B2 (en) 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP4114331B2 (en) 2001-06-15 2008-07-09 豊田合成株式会社 Light emitting device
EP2034530B1 (en) 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
JP4010299B2 (en) 2001-06-20 2007-11-21 日亜化学工業株式会社 Semiconductor light emitting device and method for forming the same
JP4529319B2 (en) 2001-06-27 2010-08-25 日亜化学工業株式会社 Semiconductor chip and manufacturing method thereof
US6902811B2 (en) * 2001-06-28 2005-06-07 Toray Industries, Inc. Epoxy resin composition excellent in weather resistance and fiber-reinforced composite materials
DE10131698A1 (en) 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Surface-mountable radiation-emitting component and method for its production
US20030008490A1 (en) * 2001-07-09 2003-01-09 Guoqiang Xing Dual hardmask process for the formation of copper/low-k interconnects
US6696222B2 (en) * 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
JP4147755B2 (en) 2001-07-31 2008-09-10 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
TW511303B (en) 2001-08-21 2002-11-21 Wen-Jr He A light mixing layer and method
US7169280B2 (en) 2001-08-31 2007-01-30 Semitool, Inc. Apparatus and method for deposition of an electrophoretic emulsion
JPWO2003021668A1 (en) * 2001-08-31 2004-12-24 日立化成工業株式会社 Wiring board, semiconductor device, and manufacturing method thereof
EP2017901A1 (en) 2001-09-03 2009-01-21 Panasonic Corporation Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting DEV
JP2006080565A (en) 2001-09-03 2006-03-23 Matsushita Electric Ind Co Ltd Method of manufacturing semiconductor light emitting device
US6759266B1 (en) * 2001-09-04 2004-07-06 Amkor Technology, Inc. Quick sealing glass-lidded package fabrication method
JP3925137B2 (en) 2001-10-03 2007-06-06 日亜化学工業株式会社 Method for manufacturing light emitting device
JP3948650B2 (en) 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド Light emitting diode and manufacturing method thereof
TW517356B (en) * 2001-10-09 2003-01-11 Delta Optoelectronics Inc Package structure of display device and its packaging method
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
EP1437776B1 (en) 2001-10-12 2011-09-21 Nichia Corporation Light emitting device and method for manufacture thereof
ATE324387T1 (en) 2001-11-27 2006-05-15 Basell Poliolefine Srl CLEAR AND FLEXIBLE POLYPROPENE COMPOSITIONS
JP4055405B2 (en) * 2001-12-03 2008-03-05 ソニー株式会社 Electronic component and manufacturing method thereof
JP2003170465A (en) * 2001-12-04 2003-06-17 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor package and sealing mold therefor
US7066335B2 (en) 2001-12-19 2006-06-27 Pretech As Apparatus for receiving and distributing cash
DE50310999D1 (en) 2002-01-07 2009-02-12 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh LAMP
TW518775B (en) * 2002-01-29 2003-01-21 Chi-Hsing Hsu Immersion cooling type light emitting diode and its packaging method
JP2003234511A (en) 2002-02-06 2003-08-22 Toshiba Corp Semiconductor light-emitting device and manufacturing method thereof
JP4269709B2 (en) 2002-02-19 2009-05-27 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
US6924514B2 (en) 2002-02-19 2005-08-02 Nichia Corporation Light-emitting device and process for producing thereof
JP3801931B2 (en) 2002-03-05 2006-07-26 ローム株式会社 Structure and manufacturing method of light emitting device using LED chip
JP3972183B2 (en) * 2002-03-07 2007-09-05 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof, circuit board, and electronic apparatus
US6756186B2 (en) 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6949389B2 (en) * 2002-05-02 2005-09-27 Osram Opto Semiconductors Gmbh Encapsulation for organic light emitting diodes devices
CA2427559A1 (en) * 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
JP2004014841A (en) * 2002-06-07 2004-01-15 Fujitsu Ltd Semiconductor device and its manufacturing method
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
JP2004031856A (en) 2002-06-28 2004-01-29 Sumitomo Electric Ind Ltd ZnSe-BASED LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD
KR101030068B1 (en) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 Method of Manufacturing Nitride Semiconductor Device and Nitride Semiconductor Device
DE10237084A1 (en) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Electrically conductive frame with a semiconductor light diode, to illuminate a mobile telephone keypad, has a layered structure with the electrical connections and an encapsulated diode chip in very small dimensions
KR20040017926A (en) 2002-08-22 2004-03-02 웬-치 호 Light-mixing layer and method
JP2004083653A (en) 2002-08-23 2004-03-18 Sharp Corp Light emitting device, phosphor and method for producing the same
US20040038442A1 (en) * 2002-08-26 2004-02-26 Kinsman Larry D. Optically interactive device packages and methods of assembly
EP1892764B1 (en) 2002-08-29 2016-03-09 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
JP2004095765A (en) 2002-08-30 2004-03-25 Nichia Chem Ind Ltd Light emitting device and method for manufacturing the same
US7078737B2 (en) 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
US7264378B2 (en) 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
CA2495149A1 (en) 2002-09-19 2004-04-01 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
JP2004134699A (en) 2002-10-15 2004-04-30 Toyoda Gosei Co Ltd Light emitting device
US20060003477A1 (en) 2002-10-30 2006-01-05 Bert Braune Method for producing a light source provided with electroluminescent diodes and comprising a luminescence conversion element
JP4072632B2 (en) 2002-11-29 2008-04-09 豊田合成株式会社 Light emitting device and light emitting method
JP4292794B2 (en) 2002-12-04 2009-07-08 日亜化学工業株式会社 Light emitting device, method for manufacturing light emitting device, and method for adjusting chromaticity of light emitting device
DE10258193B4 (en) 2002-12-12 2014-04-10 Osram Opto Semiconductors Gmbh Method for producing light-emitting diode light sources with luminescence conversion element
US6917057B2 (en) 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
JP4411841B2 (en) 2003-01-10 2010-02-10 三菱化学株式会社 LIGHT EMITTING DEVICE, LIGHTING DEVICE USING SAME, AND DISPLAY
JP3858829B2 (en) 2003-02-06 2006-12-20 日亜化学工業株式会社 Method for forming light emitting diode
US7042020B2 (en) 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
JP4254266B2 (en) 2003-02-20 2009-04-15 豊田合成株式会社 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD
US7423296B2 (en) 2003-02-26 2008-09-09 Avago Technologies Ecbu Ip Pte Ltd Apparatus for producing a spectrally-shifted light output from a light emitting device utilizing thin-film luminescent layers
JP4131178B2 (en) 2003-02-28 2008-08-13 豊田合成株式会社 Light emitting device
JP4303550B2 (en) 2003-09-30 2009-07-29 豊田合成株式会社 Light emitting device
JP3900093B2 (en) 2003-03-11 2007-04-04 日立電線株式会社 Mold and method for manufacturing semiconductor device using the same
US7038370B2 (en) 2003-03-17 2006-05-02 Lumileds Lighting, U.S., Llc Phosphor converted light emitting device
JP4550386B2 (en) 2003-03-27 2010-09-22 三菱電機株式会社 Package for optical semiconductor devices
WO2004099342A1 (en) 2003-05-12 2004-11-18 Luxpia Co., Ltd. Tb,b-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same
US7286296B2 (en) 2004-04-23 2007-10-23 Light Prescriptions Innovators, Llc Optical manifold for light-emitting diodes
JP2004363380A (en) 2003-06-05 2004-12-24 Sanyo Electric Co Ltd Optical semiconductor device and its fabricating process
JP4415572B2 (en) 2003-06-05 2010-02-17 日亜化学工業株式会社 Semiconductor light emitting device and manufacturing method thereof
JP3813599B2 (en) 2003-06-13 2006-08-23 ローム株式会社 Method for manufacturing white light emitting diode element
US6921929B2 (en) 2003-06-27 2005-07-26 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
JP4034241B2 (en) 2003-06-27 2008-01-16 日本ライツ株式会社 LIGHT SOURCE DEVICE AND LIGHT SOURCE DEVICE MANUFACTURING METHOD
US7075225B2 (en) 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US7200009B2 (en) * 2003-07-01 2007-04-03 Nokia Corporation Integrated electromechanical arrangement and method of production
US20080106893A1 (en) 2004-07-02 2008-05-08 S. C. Johnson & Son, Inc. Lamp and bulb for illumination and ambiance lighting
JP4503950B2 (en) 2003-07-11 2010-07-14 スタンレー電気株式会社 Method for manufacturing phosphor-integrated LED lamp
JP2005030369A (en) 2003-07-11 2005-02-03 Denso Corp Environmental conservation contribution system, on-vehicle device, regenerative electric power utilization system, and value returning method of regenerative power generation
US7391153B2 (en) 2003-07-17 2008-06-24 Toyoda Gosei Co., Ltd. Light emitting device provided with a submount assembly for improved thermal dissipation
JP4277617B2 (en) 2003-08-08 2009-06-10 日立電線株式会社 Manufacturing method of semiconductor light emitting device
WO2005022654A2 (en) 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
KR100808705B1 (en) 2003-09-30 2008-02-29 가부시끼가이샤 도시바 Light emitting device
CN1863828A (en) 2003-10-08 2006-11-15 艾利丹尼森公司 Sound damping adhesive
KR100587328B1 (en) 2003-10-16 2006-06-08 엘지전자 주식회사 Light Emitting Diode a front optical source
KR101127314B1 (en) 2003-11-19 2012-03-29 니치아 카가쿠 고교 가부시키가이샤 Semiconductor device
JP2005167079A (en) 2003-12-04 2005-06-23 Toyoda Gosei Co Ltd Light emitting device
CN1317775C (en) 2003-12-10 2007-05-23 玄基光电半导体股份有限公司 Packaging structure of LED and packaging method thereof
JP2005197369A (en) 2004-01-05 2005-07-21 Toshiba Corp Optical semiconductor device
JP4231417B2 (en) 2004-01-07 2009-02-25 パナソニック株式会社 Substrate processing apparatus and cleaning method thereof
JP2005252222A (en) 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device, lighting module, lighting device, display device, and method of manufacturing semiconductor light-emitting device
JP4357311B2 (en) 2004-02-04 2009-11-04 シチズン電子株式会社 Light emitting diode chip
US7246923B2 (en) 2004-02-11 2007-07-24 3M Innovative Properties Company Reshaping light source modules and illumination systems using the same
CN1918263A (en) 2004-02-18 2007-02-21 昭和电工株式会社 Phosphor, production method thereof and light-emitting device using the phosphor
US7569863B2 (en) 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
US7250715B2 (en) 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
US6924233B1 (en) 2004-03-19 2005-08-02 Agilent Technologies, Inc. Phosphor deposition methods
KR100486177B1 (en) 2004-03-25 2005-05-06 에피밸리 주식회사 Ⅲ-Nitride Compound Semiconductor Light Emitting Device
JP4516337B2 (en) 2004-03-25 2010-08-04 シチズン電子株式会社 Semiconductor light emitting device
US20050211991A1 (en) 2004-03-26 2005-09-29 Kyocera Corporation Light-emitting apparatus and illuminating apparatus
WO2005094318A2 (en) 2004-03-29 2005-10-13 Jmar Research, Inc. Morphology and spectroscopy of nanoscale regions using x-rays generated by laser produced plasma
US7517728B2 (en) 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US20060007207A1 (en) 2004-04-01 2006-01-12 Toshiba Matsushita Display Technology Co., Ltd. Liquid crystal display device and method of driving liquid crystal display device
US7419912B2 (en) 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US20050280894A1 (en) 2004-04-02 2005-12-22 David Hartkop Apparatus for creating a scanning-column backlight in a scanning aperture display device
US7868343B2 (en) 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
EP1738385A1 (en) 2004-04-15 2007-01-03 Koninklijke Philips Electronics N.V. Electrically controllable color conversion cell
WO2005103199A1 (en) 2004-04-27 2005-11-03 Matsushita Electric Industrial Co., Ltd. Phosphor composition and method for producing the same, and light-emitting device using the same
JP4471729B2 (en) 2004-04-30 2010-06-02 シチズン電子株式会社 Light emitting device with liquid crystal lens
TWI241034B (en) 2004-05-20 2005-10-01 Lighthouse Technology Co Ltd Light emitting diode package
EP1601030B1 (en) 2004-05-24 2019-04-03 OSRAM OLED GmbH Light-emitting electronic component
US7278760B2 (en) 2004-05-24 2007-10-09 Osram Opto Semiconductor Gmbh Light-emitting electronic component
CA2567611A1 (en) 2004-05-28 2005-12-08 Tir Systems Ltd. Luminance enhancement apparatus and method
WO2005121641A1 (en) 2004-06-11 2005-12-22 Koninklijke Philips Electronics N.V. Illumination system
DE102004031603B4 (en) 2004-06-30 2008-04-17 Eads Deutschland Gmbh Method for shaping signal spectra and circuit for carrying out the method
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7271420B2 (en) 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
JP4932144B2 (en) 2004-07-12 2012-05-16 株式会社朝日ラバー LED lamp
JP4613546B2 (en) 2004-08-04 2011-01-19 日亜化学工業株式会社 Light emitting device
JP2006049533A (en) 2004-08-04 2006-02-16 Wacker Asahikasei Silicone Co Ltd Resin sealing light emitting diode device and sealing method
JP4747726B2 (en) 2004-09-09 2011-08-17 豊田合成株式会社 Light emitting device
JP3802911B2 (en) 2004-09-13 2006-08-02 ローム株式会社 Semiconductor light emitting device
US7217583B2 (en) 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US7737459B2 (en) 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7259402B2 (en) 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8513686B2 (en) 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7372198B2 (en) 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
JP4756841B2 (en) 2004-09-29 2011-08-24 スタンレー電気株式会社 Manufacturing method of semiconductor light emitting device
DE102004060358A1 (en) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Method for producing luminescence diode chips and luminescence diode chip
JP2006114637A (en) 2004-10-13 2006-04-27 Toshiba Corp Semiconductor light-emitting device
US8134292B2 (en) 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
JP4802533B2 (en) 2004-11-12 2011-10-26 日亜化学工業株式会社 Semiconductor device
US7671529B2 (en) 2004-12-10 2010-03-02 Philips Lumileds Lighting Company, Llc Phosphor converted light emitting device
JP2006165416A (en) 2004-12-10 2006-06-22 Stanley Electric Co Ltd White-color displaying device, and manufacturing method thereof
KR100646093B1 (en) 2004-12-17 2006-11-15 엘지이노텍 주식회사 Light emitting device package
US8288942B2 (en) 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
KR100638666B1 (en) 2005-01-03 2006-10-30 삼성전기주식회사 Nitride based semiconductor light emitting device
US7195944B2 (en) 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US7221044B2 (en) 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
US7932111B2 (en) 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
JP2006245020A (en) 2005-02-28 2006-09-14 Sharp Corp Light emitting diode element and manufacturing method thereof
JP4601464B2 (en) 2005-03-10 2010-12-22 株式会社沖データ Semiconductor device, print head, and image forming apparatus using the same
US7341878B2 (en) 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP4961799B2 (en) 2005-04-08 2012-06-27 日亜化学工業株式会社 Light emitting device having a silicone resin layer formed by screen printing
KR101047683B1 (en) 2005-05-17 2011-07-08 엘지이노텍 주식회사 Light emitting device packaging method that does not require wire bonding
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
KR100665219B1 (en) 2005-07-14 2007-01-09 삼성전기주식회사 Wavelengt-converted light emitting diode package
JP2007063538A (en) 2005-08-03 2007-03-15 Shin Etsu Chem Co Ltd Addition curing-type silicone resin composition for light emitting diode
US7365371B2 (en) 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US8563339B2 (en) 2005-08-25 2013-10-22 Cree, Inc. System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
JP2007087973A (en) 2005-09-16 2007-04-05 Rohm Co Ltd Manufacture of nitride semiconductor device, method for manufacturing nitride semiconductor device, and nitride semiconductor light-emitting device obtained by the same
DE102005062514A1 (en) 2005-09-28 2007-03-29 Osram Opto Semiconductors Gmbh Multi-purpose light emitting diode incorporates selective wavelength trap
JP5127455B2 (en) 2005-09-29 2013-01-23 株式会社東芝 White light emitting device and method for manufacturing the same, backlight using the same, and liquid crystal display device
US7391558B2 (en) * 2005-10-19 2008-06-24 Raytheon Company Laser amplifier power extraction enhancement system and method
WO2007050483A2 (en) 2005-10-24 2007-05-03 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US7564070B2 (en) 2005-11-23 2009-07-21 Visteon Global Technologies, Inc. Light emitting diode device having a shield and/or filter
DE102005058127A1 (en) 2005-11-30 2007-06-06 Schefenacker Vision Systems Germany Gmbh Vehicle lamp e.g. motor vehicle rear lamp, has translucent mediums that are nontransparent in radiating direction of light which is transmitted from illuminants in translucent manner and in opposite direction of light
KR100732849B1 (en) 2005-12-21 2007-06-27 삼성에스디아이 주식회사 Organic light emitting display device
JP4828226B2 (en) 2005-12-28 2011-11-30 新光電気工業株式会社 Light emitting device and manufacturing method thereof
KR100723247B1 (en) 2006-01-10 2007-05-29 삼성전기주식회사 Chip coating type light emitting diode package and fabrication method thereof
EP1979439A1 (en) 2006-01-16 2008-10-15 Philips Intellectual Property & Standards GmbH Light emitting device with a eu-comprising phosphor material
KR200412776Y1 (en) 2006-01-19 2006-03-31 주식회사 닥터코리아 Cotton for Bedclothes Containing Wormwood
US7682850B2 (en) 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
KR200417926Y1 (en) 2006-03-21 2006-06-02 황성민 a boundary stone for No entering
WO2007107903A1 (en) 2006-03-23 2007-09-27 Koninklijke Philips Electronics N.V. Led-based lighting device with colour control
US20070269586A1 (en) 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
TWI308401B (en) 2006-07-04 2009-04-01 Epistar Corp High efficient phosphor-converted light emitting diode
BRPI0714026A2 (en) 2006-07-06 2012-12-18 Tir Technology Lp lighting device packaging
KR200429313Y1 (en) 2006-08-03 2006-10-20 (주)에코청진 A revetment block for staircase type
JP2008129043A (en) 2006-11-16 2008-06-05 Toyoda Gosei Co Ltd Led light emission display device
EP1935452A1 (en) 2006-12-19 2008-06-25 Koninklijke Philips Electronics N.V. Electrochromic device and photodynamic treatment device comprising such an electrochromic device
US8704254B2 (en) 2006-12-22 2014-04-22 Philips Lumileds Lighting Company, Llc Light emitting device including a filter
US8232564B2 (en) 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP2008218511A (en) 2007-02-28 2008-09-18 Toyoda Gosei Co Ltd Semiconductor light emitting device and method formanufacturing the same
DE102007022090A1 (en) 2007-05-11 2008-11-13 Osram Opto Semiconductors Gmbh Light emitting component for lamp, has light source e.g. organic LED, emitting electromagnetic radiation of specific wavelength range, and adjustable transparent element arranged between light source and conversion unit
US7588351B2 (en) 2007-09-27 2009-09-15 Osram Sylvania Inc. LED lamp with heat sink optic
WO2009045438A1 (en) 2007-10-03 2009-04-09 Superbulbs, Inc. Glass led light bulbs
US7915627B2 (en) 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
TW200921934A (en) 2007-11-06 2009-05-16 Prodisc Technology Inc Discrete light-emitting diode light source device of wavelength conversion unit
CN105020681B (en) 2007-11-09 2019-01-01 飞利浦照明控股有限公司 Light output device
WO2009093163A2 (en) 2008-01-22 2009-07-30 Koninklijke Philips Electronics N.V. Illumination device with led and a transmissive support comprising a luminescent material
JP5279329B2 (en) 2008-04-24 2013-09-04 パナソニック株式会社 Light-emitting unit with lens
US20090268461A1 (en) 2008-04-28 2009-10-29 Deak David G Photon energy conversion structure
US8159131B2 (en) 2008-06-30 2012-04-17 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
WO2010035171A2 (en) 2008-09-23 2010-04-01 Koninklijke Philips Electronics N.V. Lighting device with thermally variable reflecting element
US8089085B2 (en) 2009-02-26 2012-01-03 Bridgelux, Inc. Heat sink base for LEDS
US20120043886A1 (en) 2010-08-18 2012-02-23 Hua Ji Integrated Heat Conductive Light Emitting Diode (LED) White Light Source Module

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020001869A1 (en) * 1997-02-18 2002-01-03 Joseph Fjelstad Semiconductor package having light sensitive chips
US6087202A (en) * 1997-06-03 2000-07-11 Stmicroelectronics S.A. Process for manufacturing semiconductor packages comprising an integrated circuit
JP2000208820A (en) * 1999-01-14 2000-07-28 Stanley Electric Co Ltd Light emitting diode and its manufacture
EP1198005A1 (en) * 1999-03-26 2002-04-17 Hitachi, Ltd. Semiconductor module and method of mounting
US6338813B1 (en) * 1999-10-15 2002-01-15 Advanced Semiconductor Engineering, Inc. Molding method for BGA semiconductor chip package
JP2002009097A (en) * 2000-06-22 2002-01-11 Oki Electric Ind Co Ltd Semiconductor device and method of manufacturing the same
US6624058B1 (en) * 2000-06-22 2003-09-23 Oki Electric Industry Co., Ltd. Semiconductor device and method for producing the same
US20020096789A1 (en) * 2001-01-23 2002-07-25 Bolken Todd O. Semiconductor assembly encapsulation mold

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 10 17 November 2000 (2000-11-17) *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 05 3 May 2002 (2002-05-03) *

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