WO2005038890A1 - Methods of selective deposition of heavily doped epitaxial sige - Google Patents
Methods of selective deposition of heavily doped epitaxial sige Download PDFInfo
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- WO2005038890A1 WO2005038890A1 PCT/US2004/030872 US2004030872W WO2005038890A1 WO 2005038890 A1 WO2005038890 A1 WO 2005038890A1 US 2004030872 W US2004030872 W US 2004030872W WO 2005038890 A1 WO2005038890 A1 WO 2005038890A1
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- 238000000034 method Methods 0.000 title claims abstract description 144
- 230000008021 deposition Effects 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 230000008569 process Effects 0.000 claims abstract description 84
- 238000000151 deposition Methods 0.000 claims abstract description 82
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000012159 carrier gas Substances 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims abstract description 42
- 239000002019 doping agent Substances 0.000 claims abstract description 37
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 37
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 37
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims description 38
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052796 boron Inorganic materials 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910020254 Cl2SiH2 Inorganic materials 0.000 claims description 2
- AHVNUGPIPKMDBB-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge].[Ge] AHVNUGPIPKMDBB-UHFFFAOYSA-N 0.000 claims 1
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 claims 1
- 239000011261 inert gas Substances 0.000 abstract description 2
- 150000003377 silicon compounds Chemical class 0.000 description 87
- 229910000077 silane Inorganic materials 0.000 description 35
- 125000004429 atom Chemical group 0.000 description 19
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 16
- 229910003811 SiGeC Inorganic materials 0.000 description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 239000012686 silicon precursor Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 229910000078 germane Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 239000003153 chemical reaction reagent Substances 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 6
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 206010010144 Completed suicide Diseases 0.000 description 4
- 229910005091 Si3N Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000005001 laminate film Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
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- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 229910000085 borane Inorganic materials 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
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- 238000002955 isolation Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
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- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical compound CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 229910003828 SiH3 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
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- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- YOTZYFSGUCFUKA-UHFFFAOYSA-N dimethylphosphine Chemical compound CPC YOTZYFSGUCFUKA-UHFFFAOYSA-N 0.000 description 2
- WHYHZFHCWGGCOP-UHFFFAOYSA-N germyl Chemical compound [GeH3] WHYHZFHCWGGCOP-UHFFFAOYSA-N 0.000 description 2
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- OLRJXMHANKMLTD-UHFFFAOYSA-N silyl Chemical compound [SiH3] OLRJXMHANKMLTD-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- XMIIGOLPHOKFCH-UHFFFAOYSA-N 3-phenylpropionic acid Chemical compound OC(=O)CCC1=CC=CC=C1 XMIIGOLPHOKFCH-UHFFFAOYSA-N 0.000 description 1
- HNEJIUSZPOMSFT-UHFFFAOYSA-N C[GeH2][GeH3] Chemical compound C[GeH2][GeH3] HNEJIUSZPOMSFT-UHFFFAOYSA-N 0.000 description 1
- UFIKLRNUCHZRPW-UHFFFAOYSA-N C[GeH](C)[GeH3] Chemical compound C[GeH](C)[GeH3] UFIKLRNUCHZRPW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
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- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
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- 150000001336 alkenes Chemical class 0.000 description 1
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- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
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- 229910052906 cristobalite Inorganic materials 0.000 description 1
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- FAFYLCKQPJOORN-UHFFFAOYSA-N diethylborane Chemical compound CCBCC FAFYLCKQPJOORN-UHFFFAOYSA-N 0.000 description 1
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- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- UCMVNBCLTOOHMN-UHFFFAOYSA-N dimethyl(silyl)silane Chemical compound C[SiH](C)[SiH3] UCMVNBCLTOOHMN-UHFFFAOYSA-N 0.000 description 1
- GMLFPSKPTROTFV-UHFFFAOYSA-N dimethylborane Chemical compound CBC GMLFPSKPTROTFV-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- JZZIHCLFHIXETF-UHFFFAOYSA-N dimethylsilicon Chemical compound C[Si]C JZZIHCLFHIXETF-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000000047 disilanyl group Chemical group [H][Si]([*])([H])[Si]([H])([H])[H] 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AIGRXSNSLVJMEA-FQEVSTJZSA-N ethoxy-(4-nitrophenoxy)-phenyl-sulfanylidene-$l^{5}-phosphane Chemical compound O([P@@](=S)(OCC)C=1C=CC=CC=1)C1=CC=C([N+]([O-])=O)C=C1 AIGRXSNSLVJMEA-FQEVSTJZSA-N 0.000 description 1
- SHRMMCOTNQGWJS-UHFFFAOYSA-N ethylgermane Chemical compound CC[GeH3] SHRMMCOTNQGWJS-UHFFFAOYSA-N 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- IQCYANORSDPPDT-UHFFFAOYSA-N methyl(silyl)silane Chemical compound C[SiH2][SiH3] IQCYANORSDPPDT-UHFFFAOYSA-N 0.000 description 1
- FOTXTBSEOHNRCB-UHFFFAOYSA-N methylgermane Chemical compound [GeH3]C FOTXTBSEOHNRCB-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- CKQULDKQRNJABT-UHFFFAOYSA-N trimethylgermanium Chemical compound C[Ge](C)C.C[Ge](C)C CKQULDKQRNJABT-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Definitions
- Embodiments of the invention generally relate to the field of semiconductor manufacturing processes and devices, more particular, to methods of depositing silicon-containing films forming semiconductor devices.
- junction depth is required to be less than 30 nm for sub-100 nm CMOS (complementary metal-oxide semiconductor) devices.
- CMOS complementary metal-oxide semiconductor
- Conventional doping by implantation and annealing is less effective as the junction depth approaches 10 nm.
- Doping by implantation requires a post-annealing process in order to activate dopants and post-annealing causes enhanced dopant diffusion into layers.
- Source/drain extension features are manufactured by etching silicon to make a recessed source/drain feature and subsequently filling the etched surface with a selectively grown SiGe epilayer.
- Selective epitaxy permits near complete dopant activation with in-situ doping, so that the post annealing process is omitted. Therefore, junction depth can be defined accurately by silicon etching and selective epitaxy.
- the ultra shallow source/drain junction inevitably results in increased series resistance. Also, junction consumption during suicide formation increases the series resistance even further.
- an elevated source/drain is epitaxially and selectively grown on the junction.
- Selective Si epitaxial deposition and selective SiGe epitaxial deposition permits growth of epilayers on silicon moats with no growth on dielectric areas.
- Selective epitaxy may be used in semiconductor devices, such as within elevated source/drains, source/drain extensions, contact plugs, and base layer deposition of bipolar devices.
- a selective epitaxy process involves two reactions, deposition and etching, that simultaneously occur with relatively different reaction rates on silicon and on dielectric surface.
- a selective process window results in deposition only on silicon surfaces by changing the concentration of an etchant gas (e.g., HCI).
- an etchant gas e.g., HCI
- a popular process to perform selective, epitaxy deposition is to use dichlorosilane (SiH 2 CI 2 ) as a silicon source, germane (GeH 4 ) as a germanium source, HCI as an etchant to provide selectivity during the deposition and hydrogen (H 2 ) as a carrier gas.
- SiGe epitaxial deposition is suitable for small dimensions, this approach does not readily prepare doped SiGe since the dopants react with HCI.
- the process development of heavily boron doped (e.g., higher than 5 x 10 19 cm "3 ) selective SiGe epitaxy is a much more complicated task because boron doping makes the process window for selective deposition narrow.
- more boron concentration e.g., B 2 H 6
- This higher HCI flow rate reduces boron incorporation in the epilayers presumably because the B-Cl bond is stronger than Ge-CI and Si-CI bonds.
- a method of depositing a silicon germanium film on a substrate includes placing the substrate within a process chamber and heating the substrate surface to a temperature in a range from about 500°C to about 900°C while maintaining a pressure in a range from about 0.1 Torr to about 200 Torr.
- a deposition gas is provided to the process chamber and includes SiH 4 , GeH 4 , HCI, a carrier gas and at least one dopant gas, such as diborane, arsine or phosphine.
- a doped silicon germanium film is epitaxially grown on the substrate.
- a selective epitaxial method for growing a doped silicon germanium film on a substrate includes placing the substrate within a process chamber at a pressure in a range from about 0.1 Torr to about 200 Torr and heating the substrate surface to a temperature in a range from about 500°C to about 900°C.
- a deposition gas is provided to the process chamber and includes SiH 4 , a germanium source, an etchant source, a carrier gas and at least one dopant gas.
- the silicon germanium film is grown and has a dopant concentration in a range from about 1x10 20 atoms/cm 3 to about 2.5x10 21 atoms/cm 3 .
- a selective epitaxial method for growing a silicon- containing film on a substrate includes placing the substrate within a process chamber at a pressure in a range from about 0.1 Torr to about 200 Torr and heating the substrate surface to a temperature in a range from about 500°C to about 900°C.
- a deposition gas is provided to the process chamber and includes SiH , HCI and a carrier gas. The silicon-containing film is grown at a rate from about 50 A min to about 600 Amin.
- a selective epitaxial method for growing a silicon- containing film on a substrate includes placing the substrate within a process chamber at a pressure in a range from about 0.1 Torr to about 200 Torr, heating the substrate to a temperature in a range from about 500°C to about 900°C, providing a deposition gas that includes CI 2 SiH 2 , HCI and a carrier gas and depositing a silicon-containing layer on the substrate.
- the method further includes providing a second deposition gas comprising SiH 4 , HCI and a second carrier gas and depositing a second silicon-containing layer on the silicon-containing layer.
- a method of selectively depositing a silicon- containing film on a substrate includes placing the substrate within a process chamber, heating the substrate to a temperature in a range from about 500°C to about 900°C and maintaining a pressure in a range from about 0.1 Torr to about 200 Torr.
- the method further includes providing a deposition gas containing SiH 4 , a germanium source, HCI, at least one dopant gas and a carrier gas selected from the group consisting of N 2 , Ar, He and combinations thereof and depositing the silicon-containing film epitaxially on the substrate.
- Figures 1A-C show several devices with epitaxially deposited silicon- containing layer
- Figures 2A-F show schematic illustrations of fabrication techniques for a source/drain extension device within a MOSFET.
- the invention provides a process to epitaxially deposit silicon containing compounds during the manufacture of various device structures.
- the process utilizes the silicon precursor silane (SiH 4 ) during the deposition of silicon compounds.
- SiH 4 silicon precursor silane
- past techniques usually have used chlorine- containing precursors, such as dichlorosilane, for selective deposition
- embodiments of the present invention teach the utilization of silane as a precursor.
- the use of silane has been found to deposit silicon containing films more quickly than that of dichlorosilane.
- the use of silane provides a higher degree of control for dopant concentrations while the film and increasing the deposition rate.
- Some embodiments disclose processes to grow films of selective, epitaxial silicon compounds.
- Selective silicon containing film growth generally is conducted when the substrate or surface includes more than one material, such as exposed single crystalline silicon surface areas and features that are covered with dielectric material, such as oxide layers or nitride layers.
- these features are dielectric material and may include silicon oxide silicon nitride, silicon oxynitride, tantalum nitride.
- Selective epitaxial growth to the crystalline, silicon surface is achieved while the feature is left bare, generally, with the utilization of an etchant (e.g., HCI).
- the etchant removes amorphous silicon or polysilicon growth from features quicker than the etchant removes crystalline silicon growth from the substrate, thus selective epitaxial growth is achieved.
- Carrier gases are used throughout the processes and include H 2 , Ar, N 2 , He and combinations thereof.
- H 2 is used as a carrier gas.
- N 2 is used as a carrier gas.
- a carrier gas is substantial free of H 2 or atomic hydrogen during an epitaxial deposition process.
- a relatively inert gas may be used as a carrier gas, such as N 2 , Ar, He and combinations thereof.
- Carrier gases may be combined in various ratios during some embodiments of the process.
- a carrier gas includes N 2 and/or Ar to maintain available sites on the silicon compound film.
- the presence of hydrogen on the silicon compound surface limits the number of available sites (i.e., passivates) for Si or SiGe to grow when an abundance of H 2 is used as a carrier gas. Consequently, a passivated surface limits the growth rate at a given temperature, particularly at lower temperatures (e.g., ⁇ 650°C). Therefore, a carrier gas of N 2 and/or Ar may be used during a process at lower temperature and reduce the thermal budget without sacrificing the growth rate.
- a silicon compound film is epitaxially grown as a Si film.
- a substrate e.g., 300 mm OD
- a silicon precursor e.g., silane
- a carrier gas e.g., H 2 and/or N 2
- an etchant e.g., HCI
- the flow rate of the silane is in the range from about 5 seem to about 500 seem.
- the flow rate of the carrier gas is from about 1,000 seem to about 60,000 seem.
- the flow rate of the etchant is from about 5 seem to about 1 ,000 seem.
- the process chamber is maintained at a pressure from about 0.1 Torr to about 200 Torr, preferably about 15 Torr.
- the substrate is kept at a temperature in the range from about 500°C to about 1 ,000°C, preferably from about 600°C to about 900°C, for example, from 600°C to 750°C, or in another example, from 650°C to 800°C.
- the mixture of reagents is thermally driven to react and epitaxially deposit crystalline silicon.
- the HCI etches any deposited amorphous silicon or polycrystalline silicon from dielectric features on the surface of the substrate.
- the process is conducted to form the deposited silicon compound with a thickness in a range from about 100 A to about 3,000 A and has a deposition rate between about 50 A/min and about 600 A/min, preferably about 150 A/min.
- the silicon compound has a thickness greater than 500 A, such as about 1 ,000 A or greater. *
- Etchants maintain various areas on a device to be free of deposited silicon compound.
- Etchants that are useful during selective deposition processes throughout the embodiments include HCI, HF, F 2 , NF, XeF 2 , HBr, Si 2 CI 6 , SiCI , Cl 2 SiH 2 , CCI , Cl 2 and combinations thereof.
- Other silicon precursors, besides silane, useful to deposit silicon compounds include higher silanes and organosilanes. Higher silanes include the compounds with the empirical formula Si ⁇ H( 2x +2), such as disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), tetrasilane (Si 4 H ⁇ 0 ) > derivatives thereof and combinations thereof.
- Organosilane compounds have been found to be advantageous silicon sources and carbon sources during embodiments of the present invention to incorporate carbon in to deposited silicon compound.
- a silicon compound film is epitaxially grown as a SiGe film.
- a substrate e.g., 300 mm OD
- a silicon precursor e.g., silane
- a carrier gas e.g., H 2 and/or N 2
- germanium source e.g., GeH 4
- an etchant e.g., HCI.
- the flow rate of the silane is in the range from about 5 seem to about 500 seem.
- the flow rate of the carrier gas is from about 1,000 seem to about 60,000 seem.
- the flow rate of the germanium source is from about 0.1 seem to about 10 seem.
- the flow rate of the etchant is from about 5 seem to about 1 ,000 seem.
- the process chamber is maintained at a pressure from about 0.1 Torr to about 200 Torr, preferably about 15 Torr.
- the substrate is maintained at a temperature in the range from about 500°C to about 1,000°C, preferably from about 700°C to about 900°C.
- the reagent mixture is thermally driven to react and epitaxially deposit a silicon compound, namely a silicon germanium film.
- the HCI etches any deposited amorphous SiGe compounds from dielectric features on the surface of the substrate.
- the process is conducted to form the deposited SiGe compound with a thickness in a range from about 100 A to about 3,000 A and has a deposition rate between about 50 A/min and about 300 A/min, preferably at about 150 A min.
- the germanium concentration of the SiGe compound is in the range from about 1 atomic percent to about 30 atomic percent, preferably about 20 atomic percent.
- germanium sources or precursors besides germane (GeH 4 ), to deposit silicon compounds include higher germanes and organogermanes.
- Higher germanes include compounds with the empirical formula Ge x H( 2 ⁇ +2). such as digermane (Ge 2 H 6 ), trigermane (Ge 3 H 8 ) and tetragermane (Ge 4 H-i 0 ), derivatives thereof and combinations thereof during various embodiments of the present invention.
- germane and organogermane compounds have been found to be germanium sources as well as carbon sources for incorporating germanium and carbon into the deposited silicon compounds, namely SiGe and SiGeC compounds.
- a silicon compound film is epitaxially grown as a doped Si film.
- a substrate e.g., 300 mm OD
- a silicon precursor e.g., silane
- a carrier gas e.g., H 2 and/or N 2
- a dopant e.g., B 2 H ⁇
- an etchant e.g., HCI.
- the flow rate of the silane is in the range from about 5 seem to about 500 seem.
- the flow rate of the carrier gas is from about 1 ,000 seem to about 60,000 seem.
- the flow rate of the dopant is from about 0.01 seem to about 3 seem.
- the flow rate of the etchant is from about 5 seem to about 1 ,000 seem.
- the process chamber is maintained at a pressure from about 0.1 Torr to about 200 Torr, preferably about 15 Torr.
- the substrate is kept at a temperature in the range from about 500°C to about 1,000°C, preferably from about 700°C to about 900°C.
- the mixture of reagents is thermally driven to react and epitaxially deposit doped silicon films.
- the HCI etches any deposited amorphous silicon or polycrystalline silicon from dielectric features on the surface of the substrate.
- the process deposits a doped silicon compound with a thickness in a range from about 100 A to about 3,000 A and has a deposition rate from about 50 A/min to about 600 A/min, preferably about 150 A min.
- Dopants provide the deposited silicon compounds with various conductive characteristics, such as directional electron flow in a controlled and desired pathway required by the electronic device. Films of the silicon compounds are doped with particular dopants to achieve the desired conductive characteristic.
- the silicon compound is deposited as doped p-type material by co- flowing diborane with the silicon precursor.
- the boron concentration of the deposited silicon compound is in the range from about 10 15 atoms/cm 3 to about 10 21 atoms/cm 3 .
- the p-type dopant has a concentration of at least 5x10 19 atoms/cm 3 .
- the p-type dopant is in the range from about 1x10 20 atoms/cm 3 to about 2.5x10 21 atoms/cm 3 .
- the silicon compound is doped n-type, such as with phosphorus and/or arsenic to a concentration in the range from about 10 15 atoms/cm 3 to about 10 21 atoms/cm 3 .
- boron containing dopants include boranes and organoboranes.
- Boranes include borane, diborane, trib ⁇ rane, tetraborane and pentaborane
- Alkylphosphines include trimethylphosphine ((CH 3 ) 3 P), dimethylphosphine ((CH 3 ) 2 PH), triethylphosphine ((CH 3 CH 2 ) 3 P) and diethylphosphine ((CH 3 CH 2 ) 2 PH).
- a silicon compound film is epitaxially grown to produce a doped SiGe film.
- a substrate e.g., 300 mm OD
- a silicon precursor e.g., silane
- a carrier gas e.g., H 2 and/or N 2
- a germanium source e.g., GeH 4
- a dopant e.g., B 2 H 6
- an etchant e.g., HCI
- the flow rate of the carrier gas is from about 1,000 seem to about 60,000 seem.
- the flow rate of the germanium source is from about 0.1 seem to about 10 seem.
- the flow rate of the dopant is from about 0.01 seem to about 3 seem.
- the flow rate of the etchant is from about 5 seem to about 1,000 seem.
- the process chamber is maintained at a pressure from about 0.1 Torr to about 200 Torr, preferably about 15 Torr.
- the substrate is maintained at a temperature in the range from about 500°C to about 1 ,000°C, preferably from about 700°C to about 900°C.
- the reagent mixture is thermally driven to react and epitaxially deposit a silicon compound, namely a silicon germanium film.
- the HCI etches any deposited amorphous SiGe from features upon the surface of the substrate.
- the process is conducted to form the doped SiGe compound with a thickness in a range from about 100 A to about 3,000 A and has a deposition rate between about 50 A min and about 600 A/min, preferably at about 150 A/min.
- the germanium concentration of the SiGe compound is in the range from about 1 atomic percent to about 30 atomic percent, preferably about 20 atomic percent.
- the boron concentration of the SiGe compound is in the range from about 1 ⁇ 10 20 atoms/cm 3 to about 2.5x10 21 atoms/cm 3 , preferably about 2x10 20 atoms/cm 3 .
- a silicon compound film is epitaxially grown as a SiGeC film.
- a substrate e.g., 300 mm OD
- a silicon precursor e.g., silane
- a carrier gas e.g., H 2 and/or N 2
- germanium source e.g., GeH
- carbon source e.g., CH 3 SiH 3
- an etchant e.g., HCI.
- the flow rate of the silane is in the range from about 5 seem to about 500 seem.
- the flow rate of the carrier gas is from about 1,000 seem to about 60,000 seem.
- the flow rate of the germanium source is from about 0.1 seem to about 10 seem.
- the flow rate of the carbon source is from about 0.1 seem to about 50 seem.
- the flow rate of the etchant is from about 5 seem to about 1 ,000 seem.
- the process chamber is maintained at a pressure from about 0.1 Torr to about 200 Torr, preferably about 15 Torr.
- the substrate is maintained at a temperature in the range from about 500°C to about ,000°C, preferably from about 500°C to about 700°C.
- the reagent mixture is thermally driven to react and epitaxially deposit a silicon compound, namely a silicon germanium carbon film.
- the HCI etches any deposited amorphous or polycrystalline SiGeC compounds from dielectric features upon the surface of the substrate.
- the process deposits a SiGeC compound with a thickness in a range from about 100 A to about 3,000 A and has at a deposition rate between about 50 A/min and about 600 A/min, preferably about 150 A/min.
- the germanium concentration of the SiGeC compound is in the range from about 1 atomic percent to about 30 atomic percent, preferably about 20 atomic percent.
- the carbon concentration of the SiGeC compound is in the range from about 0.1 atomic percent to about 5 atomic percent, preferably about 2 atomic percent.
- carbon sources or precursors besides ethylene or methane, are useful while depositing silicon compounds and include alkyls, alkenes and alkynes of ethyl, propyl and butyl.
- Such carbon sources include ethyne (C 2 H 2 ), propane (C 3 H 8 ), propene (C 3 H 6 ), butyne (C 4 He), as well as others.
- Other carbon sources include organosilane compounds, as described in relation to silicon sources.
- a silicon compound film is epitaxially grown as a doped-SiGeC film.
- a substrate e.g., 300 mm OD
- silicon precursor e.g., silane
- a carrier gas e.g., H 2 and/or N 2
- germanium source e.g., GeH
- carbon source e.g., CH 3 SiH 3
- a dopant e.g., B 2 H ⁇
- an etchant e.g., HCI.
- the flow rate of the silane is in the range from about 5 seem to about 500 seem.
- the flow rate of the carrier gas is from about 1 ,000 seem to about 60,000 seem.
- the flow rate of the germanium source is from about 0.1 seem to about 10 seem.
- the flow rate of the carbon source is from about 0.1 seem to about 50 seem.
- the flow rate of the dopant is from about 0.01 seem to about 3 seem.
- the flow rate of the etchant is from about 5 seem to about 1,000 seem.
- the process chamber is maintained with a pressure from about 0.1 Torr to about 200 Torr, preferably at about 15 Torr.
- the substrate is maintained at a temperature in the range from about
- the reagent mixture is thermally driven to react and epitaxially deposit a silicon compound, namely a doped silicon germanium carbon film.
- the HCI etches any deposited amorphous or polycrystalline SiGeC compounds from dielectric features on the surface of the substrate.
- the process deposits a doped-SiGeC compound with a thickness in a range from about 100 A to about 3,000 A and has a deposition rate between about 50 A/min and about 600 A/min, preferably about 150 A/min.
- the germanium concentration of the SiGeC compound is in the range from about 1 atomic percent to about 30 atomic percent, preferably about 20 atomic percent.
- the carbon concentration of the SiGeC compound is in the range from about 0.1 atomic percent to about 5 atomic percent, preferably about 2 atomic percent.
- the boron concentration is in the range from about 1x10 20 atoms/cm 3 to about 2.5x10 21 atoms/cm 3 of the SiGe compound, preferably at about 2x10 20 atoms/cm 3 .
- a second silicon compound film is epitaxially grown as a SiGe film by using dichlorosilane (CI 2 SiH 2 ), subsequently to depositing any of the silicon compounds as described above via silane as a silicon source.
- a substrate e.g., 300 mm OD
- dichlorosilane is flown concurrently into the process chamber with a carrier gas ⁇ e.g., H 2 and/or N2), a germanium source (e.g., GeH 4 ) and an etchant (e.g., HCI).
- the flow rate of the dichlorosilane is in the range from about 5 seem to about 500 seem.
- the flow rate of the carrier gas is from about 1,000 seem to about 60,000 seem.
- the flow rate of the germanium source is from about 0.1 seem to about 10 seem.
- the flow rate of the etchant is from about 5 seem to about 1,000 seem.
- the process chamber is maintained with a pressure from about 0.1 Torr to about 200 Torr, preferably about 15 Torr.
- the substrate is maintained at a temperature in the range from about 500°C to about 1 ,000°C, preferably from about 700°C to about 900°C.
- the reagent mixture is thermally driven to react and epitaxially deposit a second silicon compound, namely a silicon germanium film on the first silicon compound.
- the HCI etches any deposited amorphous or polycrystalline SiGe compounds from any dielectric features upon the surface of the substrate.
- the process is conducted to form the deposited SiGe compound with a thickness in a range from about 100 A to about 3,000 A and has a deposition rate between about 10 A/min and about 100 A/min, preferably about 50 A/min.
- the germanium concentration is in the range from about 1 atomic percent to about 30 atomic percent of the SiGe compound, preferably about 20 atomic percent.
- This embodiment describes a process to deposit a second silicon containing film, namely a SiGe film, though substitution of silane with dichlorosilane to any of the previously described embodiments.
- a third silicon containing layer is deposited using any of the silane based process discussed above.
- a silicon compound laminate film may be deposited in sequential layers of silicon compounds by altering the silicon precursor between silane and dichlorosilane.
- a laminate film of about 2,000 A is formed by depositing four silicon compound layers (each of about 500 A), such that the first and third layers are deposited using dichlorosilane in the process gas mixture and the second and fourth layers are deposited using silane in a second process gas mixture.
- the first and third layers are deposited using silane and the second and fourth layers are deposited using dichlorosilane.
- the thickness of each layer is independent from each other; therefore, a laminate film may have various thicknesses of the silicon compound layers.
- dichlorosilane is added to process gas for depositing a silicon compound layer on an under layer containing surface islands (e.g., contamination or irregularity to film).
- a process incorporating dichlorosilane may be less sensitive to irregularities of the surface islands while depositing the silicon compound layer on the under layer.
- the use of dichlorosilane as the silicon source forms silicon compounds with a higher horizontal or lateral growth rate relative to silicon compounds formed by the use of silane.
- the surface island is covered by a silicon compound layer having a consistent surface, then dichlorosilane is replaced with silane in the process gas and deposition of the silicon compound layer is continued.
- Embodiments of the invention teach processes to deposit silicon compounds on many substrates and surfaces.
- Substrates on which embodiments of the invention may be useful include, but are not limited to semiconductor wafers, such as crystalline silicon (e.g., Si ⁇ 100> and Si ⁇ 111>), silicon oxide, silicon germanium, doped or undoped wafers and patterned or non-patterned wafers.
- Substrates have a variety of geometries (e.g., round, square and rectangular) and sizes (e.g., 200 mm OD, 300 mm OD).
- Surfaces and/or substrates include wafers, films, layers and materials with dielectric, conductive and barrier properties and include polysilicon, silicon on insulators (SOI), strained and unstrained lattices.
- SOI silicon on insulators
- Pretreatment of surfaces may include polishing, etching, reduction, oxidation, hydroxylation, annealing and baking.
- wafers are dipped into a 1% HF solution, dried and baked in a hydrogen atmosphere at 800°C.
- silicon compounds include a germanium concentration within the range from about 0 atomic percent to about 95 atomic percent. In another embodiment, a germanium concentration is within the range from about 1 atomic percent to about 30 atomic percent, preferably from about 15 atomic percent to about 25 atomic percent, and more preferably, about 20 atomic percent. Silicon compounds also include a carbon concentration within the range from about 0 atomic percent to about 5 atomic percent. In other aspects, a carbon concentration is within the range from about 200 pp to about 2 atomic percent.
- the silicon compound films of germanium and/or carbon are produced by various processes of the invention and can have consistent, sporadic or graded elemental concentrations.
- Graded silicon germanium films are disclosed in U.S. Patent No. 6,770,134 and in U.S. Patent Application 10/014,466, published as U.S. Patent Publication No. 20020174827, both assigned to Applied Material, Inc., and incorporated herein by reference in their entirety for the purpose of describing methods of depositing graded silicon compound films.
- silane and a germanium source are used to deposit silicon germanium containing films, in this embodiment, the ratio of a silane source and a germanium source may be varied to control the elemental concentration of the silicon compound while growing a graded film.
- silane and a carbon source e.g., CH3SiH 3
- the ratio of silane and carbon source may be varied to control the elemental concentration of the silicon compound while growing homogenous or graded films.
- silane, a germanium source e.g., GeH 4
- a carbon source e.g., CH 3 SiH 3
- the ratio of silane, germanium and carbon source can be varied in order to provide control of the elemental concentration while growing homogenous or graded films.
- silicon compound films are grown by chemical vapor deposition (CVD) processes, wherein CVD processes include atomic layer deposition (ALD) processes and/or atomic layer epitaxy (ALE) processes.
- Chemical vapor deposition includes the use of many techniques, such as plasma- assisted CVD (PA-CVD), atomic layer CVD (ALCVD), organometallic or metalorganic CVD (OMCVD or MOCVD), laser-assisted CVD (LA-CVD), ultraviolet CVD (UV-CVD), hot-wire (HWCVD), reduced-pressure or low pressure CVD (RP- CVD or LP-CVD), ultra-high vacuum CVD (UHV-CVD) and others.
- the process uses thermal CVD to epitaxially grow or deposit the silicon compound, whereas the silicon compound includes silicon, SiGe, SiC, SiGeC, doped variants thereof and combinations thereof.
- the processes of the invention can be carried out in equipment known in the art of ALE, CVD and ALD.
- the apparatus brings the sources into contact with a heated substrate on which the silicon compound films are grown.
- the processes can operate at a range of pressures from about 1 mTorr to about 2,300 Torr, preferably between about 0.1 Torr and about 200 Torr.
- Hardware that can be used to deposit silicon-containing films includes the Epi Centura ® system and the Poly Gen ® system available from Applied Materials, Inc., located in Santa Clara, California.
- An ALD apparatus is disclosed in U.S. Patent Application No. 10/032,284, published as U.S. Patent Publication No.
- FIG. 1A-1C show the processes of depositing silicon compound layers in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and bipolar transistors as depicted in Figures 1A-1C.
- MOSFET Metal-Oxide-Semiconductor Field Effect Transistor
- Figures 1A-1B show the epitaxially grown silicon compound on a MOSFET. The silicon compound is deposited to the source/drain features of the device.
- Figure 1A demonstrates the silicon compound deposited as a source/drain extension source, while in another embodiment, Figure 1B shows the silicon compound deposited as an elevated source/drain (ESD).
- ESD elevated source/drain
- the source/drain layer 12 is formed by ion implantation of the substrate 10. Generally, the substrate 10 is doped n-type while the source/drain layer 12 is doped p-type. Silicon compound layer 14 is epitaxially grown to the source/drain layer 12 by the various embodiments of the present invention.
- a gate oxide layer 18 bridges the either the segmented silicon compound layer 14 ( Figure 1A) or the segmented source/drain layer 12 ( Figure 1B).
- gate oxide layer 18 is composed of silicon dioxide, silicon oxynitride or tantalum oxide.
- a spacer 16 which is usually an isolation material such as a nitride/oxide stack (e.g., Si 3 N 4 /SiO 2 /Si 3 N 4 ). Also within the spacer 16 is off-set layers 20 (e.g., Si 3 N ) and the gate layer 22 (e.g., W or Ni).
- an isolation material such as a nitride/oxide stack (e.g., Si 3 N 4 /SiO 2 /Si 3 N 4 ).
- off-set layers 20 e.g., Si 3 N
- the gate layer 22 e.g., W or Ni
- Figure 1C depicts the deposited silicon compound layer 34 as a base layer of a bipolar transistor.
- the silicon compound layer 34 is epitaxially grown with the various embodiments of the invention.
- the silicon compound layer 34 is deposited to an n-type collector layer 32 previously deposited to substrate 30.
- the transistor further includes isolation layer 33 (e.g., SiU2 or Si 3 N ), contact layer 36 (e.g., heavily doped poly-Si), off-set layer 38 (e.g., Si 3 N ) and a second isolation layer 40 (e.g., Si ⁇ 2 or Si 3 N 4 ).
- isolation layer 33 e.g., SiU2 or Si 3 N
- contact layer 36 e.g., heavily doped poly-Si
- off-set layer 38 e.g., Si 3 N
- second isolation layer 40 e.g., Si ⁇ 2 or Si 3 N 4 .
- a source/drain extension is formed within a MOSFET wherein the silicon compound layers are epitaxially and selectively deposited on the surface of the substrate.
- Figure 2A depicts a source/drain layer 132 formed by implanting ions, such as dopant ions, into the surface of a substrate 130. The segments of source/drain layer 132 are bridged by the gate 136 formed within off-set layer 134. A portion of the source/drain layer is etched and wet-cleaned, to produce a recess 138, as in Figure 2B.
- Figure 2C illustrates several embodiments of the present invention, in which silicon compound layers 140 (epitaxial) and 142 (polycrystalline) are selectively deposited. Silicon compound layers 140 and 142 are deposited simultaneously without depositing on the off-set layer 134. Silicon compound layers 140 and 142 are generally doped SiGe containing layers with a germanium concentration of about 1 atomic percent to about 30 atomic percent, preferably at about 20 atomic percent and a dopant (e.g., B, As or P) concentration from about 1 ⁇ 10 20 atoms/cm 3 to about 2.5x10 21 atoms/cm 3 , preferably at about 2x10 20 atoms/cm 3 .
- Figure 2D shows the nitride spacer 144 (e.g., Si 3 N ) deposited to the off-set layer 134.
- Figure 2E depicts another embodiment of the present invention, in which a silicon compound is epitaxially and selectively deposited as silicon compound layer 148.
- Silicon compound layer 148 is deposited on layer 140 (doped-SiGe).
- Polysilicon layer 146 is deposited on the silicon compound layer 142 (doped-SiGe).
- a metal layer 154 is deposited over the features and the device is annealed.
- the metal layer 154 may include cobalt, nickel or titanium, among other metals.
- polysilicon layer 146 and silicon compound layer 148 are converted to metal suicide layers, 150 and 152, respectively. That is, when cobalt is deposited as metal layer 154, then metal suicide layers 150 and 152 are cobalt suicide after an annealing process.
- the silicon compound is heavily doped with the in-situ dopants. Therefore, annealing steps of the prior art are omitted and the overall throughput is shorter. An increase of carrier mobility along the channel and subsequent drive current is achieved with the optional addition of germanium and/or carbon into the silicon compound layer. Selectively grown epilayers of the silicon compound above the gate oxide level can compensate junction consumption during the silicidation, which can relieve concerns of high series resistance of ultra shallow junctions. These two applications can be implemented together as well as solely for CMOS device fabrication.
- Silicon compounds as deposited by the embodiments herein may be used in the fabrication of devices that include Bipolar (e.g., base, emitter, collector, emitter contact), BiCMOS (e.g., base, emitter, collector, emitter contact) and CMOS (e.g., channel, source/drain, source/drain extension, elevated source/drain, substrate, strained silicon, silicon on insulator and contact plug).
- Bipolar e.g., base, emitter, collector, emitter contact
- CMOS e.g., channel, source/drain, source/drain extension, elevated source/drain, substrate, strained silicon, silicon on insulator and contact plug.
- Other embodiments of processes teach the growth of silicon compounds films that can be used as gate, base contact, collector contact, emitter contact, elevated source/drain and other uses.
- Example 1 Boron doped silicon germanium deposition: A substrate, Si ⁇ 100>, (e.g., 300 mm OD) was employed to investigate selective, monocrystalline film growth by CVD. A dielectric feature existed on the surface of the wafer. The wafer was prepared by subjecting to a 1 % HF dip for 45 seconds. The wafer was loaded into the deposition chamber (Epi Centura ® chamber) and baked in a hydrogen atmosphere at 800°C for 60 seconds to remove native oxide. A flow of carrier gas, hydrogen, was directed towards the substrate and the source compounds were added to the carrier flow. Silane (100 seem) and germane (6 seem) were added to the chamber at 15 Torr and 725°C. Hydrogen chloride was delivered with a flow rate of 460 seem.
- Ether ® chamber the deposition chamber
- Hydrogen chloride was delivered with a flow rate of 460 seem.
- Diborane was delivered with a flow rate of 1 seem.
- the substrate was maintained at 725°C.
- Deposition was carried out for 5 minutes to form a 500 A SiGe film with a germanium concentration of 21 atomic percent and the boron concentration was 2.0x10 20 cm "3 .
- Example 2 Phosphorus doped silicon germanium deposition: A substrate was prepared as in Example 1. The wafer was loaded into the deposition chamber
- Silane (100 seem) and germane (4 seem) were added to the chamber at 15 Torr and
- Example 3 Boron doped silicon germanium deposition with sequential ClgSiH? and SiH 4 flows:
- the substrates were prepared as in Example 1.
- the wafer was loaded into the deposition chamber (Epi Centura ® chamber) and baked in a hydrogen atmosphere at 800°C for 60 seconds to remove native oxide.
- a flow of carrier gas, hydrogen, was directed towards the substrate and the source compounds were added to the carrier flow.
- Dichlorosilane (100 seem), germane (2.8 seem), and diborane (0.3 seem) were added to the chamber at 15 Torr and 725°C.
- Hydrogen chloride was delivered with a flow rate of 190 seem.
- the substrate was maintained at 725°C.
- Deposition was conducted for 72 seconds to form a first layer of silicon compound with a thickness of 50 A.
- a subsequent epitaxial layer i.e., a second layer of silicon compound
- silane 100 seem
- germane 6 seem
- hydrogen chloride 460 seem
- diborane 1 seem
- the chamber pressure and temperature remained constant (15 Torr and 725°C) and the deposition was conducted for 144 seconds to form 250 A layer of the second layer.
- Examples 4 Boron doped silicon germanium deposition with seguential using SiH 4 and CI?SiH?: The substrates were prepared as in Example . The wafer was loaded into the deposition chamber (Epi Centura ® chamber) and baked in a hydrogen atmosphere at 800°C for 60 seconds to remove native oxide. A flow of carrier gas, hydrogen, was directed towards the substrate and the source compounds were added to the carrier flow. Silane (100 seem), germane (6 seem), and diborane (1 seem) were added to the chamber at 15 Torr and 725°C. Hydrogen chloride was delivered with a flow rate of 460 seem. The substrate was maintained at 725°C. Deposition was conducted for 144 seconds to form a first layer of silicon compound with a thickness of 250 A.
- a second layer of silicon compound was sequentially deposited using dichlorosilane (100 seem), germane (2.8 seem), hydrogen chloride (190 seem) and diborane (0.3 seem).
- the chamber pressure and temperature remained constant (15 Torr and 725°C) was conducted for 72 seconds to form additional 50 A layer.
Abstract
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
WO2008127220A2 (en) * | 2006-01-20 | 2008-10-23 | Applied Materials, Inc. | Methods for in-situ generation of reactive etch and growth specie in film formation processes |
US8058120B2 (en) | 2009-09-18 | 2011-11-15 | Semiconductor Manufacturing International (Shanghai) Corporation | Integration scheme for strained source/drain CMOS using oxide hard mask |
CN102465336A (en) * | 2010-11-05 | 2012-05-23 | 上海华虹Nec电子有限公司 | Method for germanium-silicon epitaxy of high germanium concentration |
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US8293622B2 (en) | 2007-06-22 | 2012-10-23 | Fujitsu Semiconductor Limited | Semiconductor device fabrication method, semiconductor device, and semiconductor layer formation method |
US8501594B2 (en) | 2003-10-10 | 2013-08-06 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
US8551831B2 (en) | 2007-08-10 | 2013-10-08 | Semiconductor Manufacturing International (Shanghai) Corporation | Silicon germanium and polysilicon gate structure for strained silicon transistors |
US9048300B2 (en) | 2005-09-29 | 2015-06-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Strained-induced mobility enhancement nano-device structure and integrated process architecture for CMOS technologies |
Families Citing this family (309)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US7439191B2 (en) * | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
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JP2006524429A (en) * | 2003-03-28 | 2006-10-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Method for epitaxial growth of N-doped silicon layers |
US7868358B2 (en) * | 2003-06-06 | 2011-01-11 | Northrop Grumman Systems Corporation | Coiled circuit device with active circuitry and methods for making the same |
US20100120235A1 (en) * | 2008-11-13 | 2010-05-13 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
US7060576B2 (en) * | 2003-10-24 | 2006-06-13 | Intel Corporation | Epitaxially deposited source/drain |
US7078302B2 (en) * | 2004-02-23 | 2006-07-18 | Applied Materials, Inc. | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
WO2005116304A2 (en) * | 2004-04-23 | 2005-12-08 | Asm America, Inc. | In situ doped epitaxial films |
US7135391B2 (en) * | 2004-05-21 | 2006-11-14 | International Business Machines Corporation | Polycrystalline SiGe junctions for advanced devices |
US7361563B2 (en) * | 2004-06-17 | 2008-04-22 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device using a selective epitaxial growth technique |
US7855126B2 (en) * | 2004-06-17 | 2010-12-21 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device using a cyclic selective epitaxial growth technique and semiconductor devices formed using the same |
KR100593736B1 (en) * | 2004-06-17 | 2006-06-28 | 삼성전자주식회사 | Methods of selectively forming an epitaxial semiconductor layer on a single crystal semiconductor and semiconductor devices manufactured using the same |
TWI463526B (en) * | 2004-06-24 | 2014-12-01 | Ibm | Improved strained-silicon cmos device and method |
US8673706B2 (en) * | 2004-09-01 | 2014-03-18 | Micron Technology, Inc. | Methods of forming layers comprising epitaxial silicon |
US7132355B2 (en) * | 2004-09-01 | 2006-11-07 | Micron Technology, Inc. | Method of forming a layer comprising epitaxial silicon and a field effect transistor |
JP2006068393A (en) * | 2004-09-03 | 2006-03-16 | Olympus Corp | Endoscope |
US20070196011A1 (en) * | 2004-11-22 | 2007-08-23 | Cox Damon K | Integrated vacuum metrology for cluster tool |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7238580B2 (en) * | 2005-01-26 | 2007-07-03 | Freescale Semiconductor, Inc. | Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration |
US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
KR100585175B1 (en) * | 2005-01-31 | 2006-05-30 | 삼성전자주식회사 | Fabrication method of gesbte thin film by chemical vapor deposition process |
US7438760B2 (en) * | 2005-02-04 | 2008-10-21 | Asm America, Inc. | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
US20060208257A1 (en) * | 2005-03-15 | 2006-09-21 | Branz Howard M | Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates |
US7648927B2 (en) * | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20060286774A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
JP2008547238A (en) * | 2005-06-30 | 2008-12-25 | フリースケール セミコンダクター インコーポレイテッド | Method for forming a semiconductor structure |
US20070048956A1 (en) * | 2005-08-30 | 2007-03-01 | Tokyo Electron Limited | Interrupted deposition process for selective deposition of Si-containing films |
US20070057320A1 (en) * | 2005-09-12 | 2007-03-15 | Tetsuji Ueno | Semiconductor Devices with Stressed Channel Regions and methods Forming the Same |
US7612389B2 (en) * | 2005-09-15 | 2009-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded SiGe stressor with tensile strain for NMOS current enhancement |
TW200713455A (en) * | 2005-09-20 | 2007-04-01 | Applied Materials Inc | Method to form a device on a SOI substrate |
KR100663010B1 (en) * | 2005-09-23 | 2006-12-28 | 동부일렉트로닉스 주식회사 | Mos transistor and manufacturing method thereof |
US20100216296A1 (en) * | 2005-10-27 | 2010-08-26 | Yusuke Muraki | Processing Method and Recording Medium |
KR20080089403A (en) * | 2005-12-22 | 2008-10-06 | 에이에스엠 아메리카, 인코포레이티드 | Epitaxial deposition of doped semiconductor materials |
US7964514B2 (en) * | 2006-03-02 | 2011-06-21 | Applied Materials, Inc. | Multiple nitrogen plasma treatments for thin SiON dielectrics |
US7410875B2 (en) * | 2006-04-06 | 2008-08-12 | United Microelectronics Corp. | Semiconductor structure and fabrication thereof |
CN101415865B (en) * | 2006-04-07 | 2015-10-07 | 应用材料公司 | For the cluster that epitaxial film is formed |
FR2900275A1 (en) * | 2006-04-19 | 2007-10-26 | St Microelectronics Sa | Forming a silicon based monocrystalline portion on a first zone surface of a substrate in which a silicon based monocrystalline material belonging to the substrate is initially exposed and on outside of a second zone of the substrate |
FR2900277B1 (en) * | 2006-04-19 | 2008-07-11 | St Microelectronics Sa | PROCESS FOR FORMING A SILICON-BASED MONOCRYSTALLINE PORTION |
CN101460654A (en) * | 2006-05-01 | 2009-06-17 | 应用材料股份有限公司 | A method of ultra-shallow junction formation using si film alloyed with carbon |
US7678631B2 (en) * | 2006-06-06 | 2010-03-16 | Intel Corporation | Formation of strain-inducing films |
US7998788B2 (en) * | 2006-07-27 | 2011-08-16 | International Business Machines Corporation | Techniques for use of nanotechnology in photovoltaics |
CN103981568A (en) * | 2006-07-31 | 2014-08-13 | 应用材料公司 | Methods of forming carbon-containing silicon epitaxial layers |
US8168548B2 (en) * | 2006-09-29 | 2012-05-01 | Tokyo Electron Limited | UV-assisted dielectric formation for devices with strained germanium-containing layers |
US20080132039A1 (en) * | 2006-12-01 | 2008-06-05 | Yonah Cho | Formation and treatment of epitaxial layer containing silicon and carbon |
US7837790B2 (en) * | 2006-12-01 | 2010-11-23 | Applied Materials, Inc. | Formation and treatment of epitaxial layer containing silicon and carbon |
US7741200B2 (en) * | 2006-12-01 | 2010-06-22 | Applied Materials, Inc. | Formation and treatment of epitaxial layer containing silicon and carbon |
US20080138955A1 (en) * | 2006-12-12 | 2008-06-12 | Zhiyuan Ye | Formation of epitaxial layer containing silicon |
US8394196B2 (en) * | 2006-12-12 | 2013-03-12 | Applied Materials, Inc. | Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon |
US7897495B2 (en) * | 2006-12-12 | 2011-03-01 | Applied Materials, Inc. | Formation of epitaxial layer containing silicon and carbon |
US7960236B2 (en) * | 2006-12-12 | 2011-06-14 | Applied Materials, Inc. | Phosphorus containing Si epitaxial layers in N-type source/drain junctions |
US9064960B2 (en) | 2007-01-31 | 2015-06-23 | Applied Materials, Inc. | Selective epitaxy process control |
US8835263B2 (en) * | 2007-02-21 | 2014-09-16 | Texas Instruments Incorporated | Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial SiGe |
US7456061B2 (en) * | 2007-03-30 | 2008-11-25 | Agere Systems Inc. | Method to reduce boron penetration in a SiGe bipolar device |
US20080274626A1 (en) * | 2007-05-04 | 2008-11-06 | Frederique Glowacki | Method for depositing a high quality silicon dielectric film on a germanium substrate with high quality interface |
KR20080102065A (en) * | 2007-05-18 | 2008-11-24 | 삼성전자주식회사 | Method of forming a epitaxial silicon structure and method of forming a semiconductor device using the same |
US7776679B2 (en) * | 2007-07-20 | 2010-08-17 | Stmicroelectronics Crolles 2 Sas | Method for forming silicon wells of different crystallographic orientations |
US8115254B2 (en) | 2007-09-25 | 2012-02-14 | International Business Machines Corporation | Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same |
US7776698B2 (en) | 2007-10-05 | 2010-08-17 | Applied Materials, Inc. | Selective formation of silicon carbon epitaxial layer |
JP5311791B2 (en) * | 2007-10-12 | 2013-10-09 | 東京エレクトロン株式会社 | Method for forming polysilicon film |
US7781799B2 (en) * | 2007-10-24 | 2010-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain strained layers |
US7939447B2 (en) * | 2007-10-26 | 2011-05-10 | Asm America, Inc. | Inhibitors for selective deposition of silicon containing films |
US8492846B2 (en) | 2007-11-15 | 2013-07-23 | International Business Machines Corporation | Stress-generating shallow trench isolation structure having dual composition |
US7655543B2 (en) * | 2007-12-21 | 2010-02-02 | Asm America, Inc. | Separate injection of reactive species in selective formation of films |
US7994010B2 (en) * | 2007-12-27 | 2011-08-09 | Chartered Semiconductor Manufacturing Ltd. | Process for fabricating a semiconductor device having embedded epitaxial regions |
US8293592B2 (en) * | 2008-04-16 | 2012-10-23 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device and substrate processing apparatus |
JP2010103142A (en) * | 2008-10-21 | 2010-05-06 | Toshiba Corp | Method for fabricating semiconductor device |
JP2010141223A (en) * | 2008-12-15 | 2010-06-24 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device and substrate processing apparatus |
US8486191B2 (en) * | 2009-04-07 | 2013-07-16 | Asm America, Inc. | Substrate reactor with adjustable injectors for mixing gases within reaction chamber |
US8022488B2 (en) * | 2009-09-24 | 2011-09-20 | International Business Machines Corporation | High-performance FETs with embedded stressors |
US8367528B2 (en) * | 2009-11-17 | 2013-02-05 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
US9117905B2 (en) * | 2009-12-22 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for incorporating impurity element in EPI silicon process |
KR101714003B1 (en) | 2010-03-19 | 2017-03-09 | 삼성전자 주식회사 | Method of forming semiconductor device having faceted semiconductor pattern and related device |
US8012859B1 (en) | 2010-03-31 | 2011-09-06 | Tokyo Electron Limited | Atomic layer deposition of silicon and silicon-containing films |
US8828850B2 (en) | 2010-05-20 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing variation by using combination epitaxy growth |
US9263339B2 (en) | 2010-05-20 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective etching in the formation of epitaxy regions in MOS devices |
US9064688B2 (en) | 2010-05-20 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Performing enhanced cleaning in the formation of MOS devices |
US8598020B2 (en) | 2010-06-25 | 2013-12-03 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of crystalline germanium |
WO2012102755A1 (en) | 2011-01-28 | 2012-08-02 | Applied Materials, Inc. | Carbon addition for low resistivity in situ doped silicon epitaxy |
US8652945B2 (en) | 2011-02-08 | 2014-02-18 | Applied Materials, Inc. | Epitaxy of high tensile silicon alloy for tensile strain applications |
US9218962B2 (en) * | 2011-05-19 | 2015-12-22 | Globalfoundries Inc. | Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
CN102931058B (en) * | 2011-08-08 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor structure and method for forming P-channel metal oxide semiconductor (PMOS) transistor |
CN102956465A (en) * | 2011-08-24 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | Metal gate forming method and MOS (metal oxide semiconductor) transistor forming method |
US20130089962A1 (en) * | 2011-10-11 | 2013-04-11 | Chung-Fu Chang | Semiconductor process |
CN103132049B (en) * | 2011-11-25 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | The formation method of germanium-silicon thin membrane and forming apparatus |
JP5780981B2 (en) * | 2012-03-02 | 2015-09-16 | 東京エレクトロン株式会社 | Method for forming germanium thin film |
KR20140016008A (en) | 2012-07-30 | 2014-02-07 | 삼성전자주식회사 | Semiconductor device and method of manufacturing the same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9059212B2 (en) | 2012-10-31 | 2015-06-16 | International Business Machines Corporation | Back-end transistors with highly doped low-temperature contacts |
US9570595B2 (en) * | 2012-12-14 | 2017-02-14 | Fudan University | Transistor and method of making |
CN103928294B (en) * | 2013-01-15 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | The wafer preprocess method of selective epitaxial growth germanium silicon |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
WO2014123667A1 (en) * | 2013-02-06 | 2014-08-14 | Applied Materials, Inc. | Gas injection apparatus and substrate process chamber incorporating same |
WO2015038309A1 (en) | 2013-09-16 | 2015-03-19 | Applied Materials, Inc. | Method of forming strain-relaxed buffer layers |
US9064961B2 (en) * | 2013-09-18 | 2015-06-23 | Global Foundries Inc. | Integrated circuits including epitaxially grown strain-inducing fills doped with boron for improved robustness from delimination and methods for fabricating the same |
CN104701164A (en) * | 2013-12-04 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and method for manufacturing same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
CN105047526A (en) * | 2014-04-21 | 2015-11-11 | 应用材料公司 | Method of enhancing dopant incorporation in epitaxial film using halogen molecules as reactant in depostion |
SG10201810902WA (en) * | 2014-06-13 | 2019-01-30 | Applied Materials Inc | Dual auxiliary dopant inlets on epi chamber |
CN104201108B (en) * | 2014-08-27 | 2017-11-07 | 上海集成电路研发中心有限公司 | The manufacture method of SiGe source /drain region |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
CN104392929A (en) * | 2014-11-26 | 2015-03-04 | 上海华力微电子有限公司 | Preparation method of intercalated silicon carbide |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
DE112016001675B4 (en) | 2015-04-10 | 2024-03-28 | Applied Materials, Inc. | Method for increasing the growth rate for selective expitaxial growth |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
WO2017091345A1 (en) * | 2015-11-25 | 2017-06-01 | Applied Materials, Inc. | New materials for tensile stress and low contact resistance and method of forming |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11088033B2 (en) | 2016-09-08 | 2021-08-10 | International Business Machines Corporation | Low resistance source-drain contacts using high temperature silicides |
FR3057102A1 (en) * | 2016-10-05 | 2018-04-06 | Stmicroelectronics Sa | GAS EPITAXY DEPOSITION METHOD |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10115808B2 (en) | 2016-11-29 | 2018-10-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | finFET device and methods of forming |
CN106783965A (en) * | 2016-12-01 | 2017-05-31 | 上海华力微电子有限公司 | A kind of germanium silicon source drain electrode and preparation method |
US11011635B2 (en) | 2016-12-12 | 2021-05-18 | Applied Materials, Inc. | Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (FINFET) device |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
JP7214724B2 (en) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | Storage device for storing wafer cassettes used in batch furnaces |
TWI791689B (en) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | Apparatus including a clean mini environment |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (en) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
CN111630203A (en) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | Method for depositing gap filling layer by plasma auxiliary deposition |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
JP7124098B2 (en) | 2018-02-14 | 2022-08-23 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20190128558A (en) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
CN112292478A (en) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
WO2020028028A1 (en) | 2018-07-30 | 2020-02-06 | Applied Materials, Inc. | Method of selective silicon germanium epitaxy at low temperatures |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) * | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (en) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming device structure using selective deposition of gallium nitride, and system for the same |
US11145504B2 (en) | 2019-01-14 | 2021-10-12 | Applied Materials, Inc. | Method of forming film stacks with reduced defects |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
TW202044325A (en) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus |
TW202104632A (en) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
CN110120344B (en) * | 2019-04-09 | 2022-08-16 | 上海华虹宏力半导体制造有限公司 | Method for realizing self-alignment structure by using silicon nitride side wall in germanium-silicon Heterojunction Bipolar Transistor (HBT) |
KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system including a gas detector |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (en) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | Method of forming topologically controlled amorphous carbon polymer films |
KR20210011748A (en) | 2019-07-23 | 2021-02-02 | 삼성전자주식회사 | A semiconductor device |
CN114072544A (en) * | 2019-07-26 | 2022-02-18 | 应用材料公司 | Anisotropic epitaxial growth |
TW202113936A (en) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
KR20210117157A (en) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for Fabricating Layer Structure Having Target Topological Profile |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
CN113555279A (en) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | Method of forming vanadium nitride-containing layers and structures including the same |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
CN112408327A (en) * | 2020-12-18 | 2021-02-26 | 天津中科拓新科技有限公司 | Method and device for preparing electronic-grade germane and co-producing electronic-grade tetrafluorogermane |
TW202240012A (en) * | 2021-03-05 | 2022-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Film deposition systems and methods |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
US11830734B2 (en) * | 2021-05-19 | 2023-11-28 | Applied Materials, Inc. | Thermal deposition of silicon-germanium |
Family Cites Families (182)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US552733A (en) * | 1896-01-07 | stansel | ||
US3675619A (en) | 1969-02-25 | 1972-07-11 | Monsanto Co | Apparatus for production of epitaxial films |
NL187942C (en) | 1980-08-18 | 1992-02-17 | Philips Nv | ZENERDIODE AND METHOD OF MANUFACTURE THEREOF |
JPS5898917A (en) | 1981-12-09 | 1983-06-13 | Seiko Epson Corp | Atomic layer epitaxial device |
US5693139A (en) * | 1984-07-26 | 1997-12-02 | Research Development Corporation Of Japan | Growth of doped semiconductor monolayers |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
US4818723A (en) * | 1985-11-27 | 1989-04-04 | Advanced Micro Devices, Inc. | Silicide contact plug formation technique |
JPS62171999A (en) | 1986-01-27 | 1987-07-28 | Nippon Telegr & Teleph Corp <Ntt> | Epitaxy of iii-v compound semiconductor |
JPS6362313A (en) | 1986-09-03 | 1988-03-18 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0639357B2 (en) * | 1986-09-08 | 1994-05-25 | 新技術開発事業団 | Method for growing element semiconductor single crystal thin film |
US5607511A (en) * | 1992-02-21 | 1997-03-04 | International Business Machines Corporation | Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
JPH01270593A (en) | 1988-04-21 | 1989-10-27 | Fujitsu Ltd | Method for forming compound semiconductor layer |
US5112439A (en) * | 1988-11-30 | 1992-05-12 | Mcnc | Method for selectively depositing material on substrates |
JPH02172895A (en) | 1988-12-22 | 1990-07-04 | Nec Corp | Method for growing semiconductor crystal |
JPH0824191B2 (en) * | 1989-03-17 | 1996-03-06 | 富士通株式会社 | Thin film transistor |
AU5977190A (en) | 1989-07-27 | 1991-01-31 | Nishizawa, Junichi | Impurity doping method with adsorbed diffusion source |
JPH0671073B2 (en) * | 1989-08-29 | 1994-09-07 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JPH03286522A (en) | 1990-04-03 | 1991-12-17 | Nec Corp | Growth method of si crystal |
JP2880322B2 (en) | 1991-05-24 | 1999-04-05 | キヤノン株式会社 | Method of forming deposited film |
JPH0547665A (en) | 1991-08-12 | 1993-02-26 | Fujitsu Ltd | Vapor growth method |
JP2828152B2 (en) | 1991-08-13 | 1998-11-25 | 富士通 株式会社 | Method of forming thin film, multilayer structure film, and method of forming silicon thin film transistor |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
JP2917694B2 (en) | 1992-04-02 | 1999-07-12 | 日本電気株式会社 | Compound semiconductor vapor deposition method and apparatus therefor |
JPH0750690B2 (en) * | 1992-08-21 | 1995-05-31 | 日本電気株式会社 | Method and apparatus for epitaxial growth of semiconductor crystal using halide |
US5273930A (en) * | 1992-09-03 | 1993-12-28 | Motorola, Inc. | Method of forming a non-selective silicon-germanium epitaxial film |
JP3265042B2 (en) | 1993-03-18 | 2002-03-11 | 東京エレクトロン株式会社 | Film formation method |
JPH0729897A (en) | 1993-06-25 | 1995-01-31 | Nec Corp | Manufacture of semiconductor device |
US5372860A (en) * | 1993-07-06 | 1994-12-13 | Corning Incorporated | Silicon device production |
JPH07109573A (en) * | 1993-10-12 | 1995-04-25 | Semiconductor Energy Lab Co Ltd | Glass substrate and heat treatment |
US5796116A (en) * | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
WO1996015550A1 (en) | 1994-11-10 | 1996-05-23 | Lawrence Semiconductor Research Laboratory, Inc. | Silicon-germanium-carbon compositions and processes thereof |
US5846867A (en) | 1995-12-20 | 1998-12-08 | Sony Corporation | Method of producing Si-Ge base heterojunction bipolar device |
US6342277B1 (en) | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
US5916365A (en) | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
AUPO347196A0 (en) | 1996-11-06 | 1996-12-05 | Pacific Solar Pty Limited | Improved method of forming polycrystalline-silicon films on glass |
US5807792A (en) * | 1996-12-18 | 1998-09-15 | Siemens Aktiengesellschaft | Uniform distribution of reactants in a device layer |
US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
US5908307A (en) | 1997-01-31 | 1999-06-01 | Ultratech Stepper, Inc. | Fabrication method for reduced-dimension FET devices |
TW417249B (en) | 1997-05-14 | 2001-01-01 | Applied Materials Inc | Reliability barrier integration for cu application |
JPH10321818A (en) * | 1997-05-21 | 1998-12-04 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US6118216A (en) * | 1997-06-02 | 2000-09-12 | Osram Sylvania Inc. | Lead and arsenic free borosilicate glass and lamp containing same |
KR100385946B1 (en) | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | Method for forming a metal layer by an atomic layer deposition and a semiconductor device with the metal layer as a barrier metal layer, an upper electrode, or a lower electrode of capacitor |
US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
KR100269306B1 (en) | 1997-07-31 | 2000-10-16 | 윤종용 | Integrate circuit device having buffer layer containing metal oxide stabilized by low temperature treatment and fabricating method thereof |
KR100261017B1 (en) | 1997-08-19 | 2000-08-01 | 윤종용 | Method for forming metal wiring of semiconductor device |
US6042654A (en) * | 1998-01-13 | 2000-03-28 | Applied Materials, Inc. | Method of cleaning CVD cold-wall chamber and exhaust lines |
TW437017B (en) * | 1998-02-05 | 2001-05-28 | Asm Japan Kk | Silicone polymer insulation film on semiconductor substrate and method for formation thereof |
US6514880B2 (en) * | 1998-02-05 | 2003-02-04 | Asm Japan K.K. | Siloxan polymer film on semiconductor substrate and method for forming same |
US6383955B1 (en) * | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US6159852A (en) * | 1998-02-13 | 2000-12-12 | Micron Technology, Inc. | Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor |
US6797558B2 (en) * | 2001-04-24 | 2004-09-28 | Micron Technology, Inc. | Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer |
EP1060287B1 (en) * | 1998-03-06 | 2005-01-26 | ASM America, Inc. | Method of depositing silicon with high step coverage |
JP4214585B2 (en) * | 1998-04-24 | 2009-01-28 | 富士ゼロックス株式会社 | Semiconductor device, semiconductor device manufacturing method and manufacturing apparatus |
US6025627A (en) * | 1998-05-29 | 2000-02-15 | Micron Technology, Inc. | Alternate method and structure for improved floating gate tunneling devices |
KR100275738B1 (en) | 1998-08-07 | 2000-12-15 | 윤종용 | Method for producing thin film using atomatic layer deposition |
JP4204671B2 (en) | 1998-09-11 | 2009-01-07 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
US6037235A (en) | 1998-09-14 | 2000-03-14 | Applied Materials, Inc. | Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices |
KR100287180B1 (en) * | 1998-09-17 | 2001-04-16 | 윤종용 | Method for manufacturing semiconductor device including metal interconnection formed using interface control layer |
KR100327328B1 (en) | 1998-10-13 | 2002-05-09 | 윤종용 | Method for forming dielectric layer of capacitor having partially different thickness in the layer |
US6364954B2 (en) | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
US6235568B1 (en) * | 1999-01-22 | 2001-05-22 | Intel Corporation | Semiconductor device having deposited silicon regions and a method of fabrication |
US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6171965B1 (en) | 1999-04-21 | 2001-01-09 | Silicon Genesis Corporation | Treatment method of cleaved film for the manufacture of substrates |
US20030232554A1 (en) | 1999-05-04 | 2003-12-18 | Blum Ronald D. | Multi-layer tacky and water-absorbing shoe-cleaning product |
US6124158A (en) | 1999-06-08 | 2000-09-26 | Lucent Technologies Inc. | Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants |
DE60042045D1 (en) | 1999-06-22 | 2009-06-04 | Panasonic Corp | Heterojunction bipolar transistors and corresponding manufacturing methods |
KR20010017820A (en) | 1999-08-14 | 2001-03-05 | 윤종용 | Semiconductor device and manufacturing method thereof |
US6391785B1 (en) | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
US6511539B1 (en) * | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
US6489241B1 (en) * | 1999-09-17 | 2002-12-03 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
TW515032B (en) | 1999-10-06 | 2002-12-21 | Samsung Electronics Co Ltd | Method of forming thin film using atomic layer deposition method |
FI117942B (en) | 1999-10-14 | 2007-04-30 | Asm Int | Process for making oxide thin films |
TW468212B (en) | 1999-10-25 | 2001-12-11 | Motorola Inc | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6780704B1 (en) | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
FI118804B (en) | 1999-12-03 | 2008-03-31 | Asm Int | Process for making oxide films |
WO2001041544A2 (en) | 1999-12-11 | 2001-06-14 | Asm America, Inc. | Deposition of gate stacks including silicon germanium layers |
US6291319B1 (en) * | 1999-12-17 | 2001-09-18 | Motorola, Inc. | Method for fabricating a semiconductor structure having a stable crystalline interface with silicon |
US6348420B1 (en) * | 1999-12-23 | 2002-02-19 | Asm America, Inc. | Situ dielectric stacks |
EP1123991A3 (en) * | 2000-02-08 | 2002-11-13 | Asm Japan K.K. | Low dielectric constant materials and processes |
US6492283B2 (en) * | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
AU2001245388A1 (en) * | 2000-03-07 | 2001-09-17 | Asm America, Inc. | Graded thin films |
US6645838B1 (en) | 2000-04-10 | 2003-11-11 | Ultratech Stepper, Inc. | Selective absorption process for forming an activated doped region in a semiconductor |
KR100363088B1 (en) | 2000-04-20 | 2002-12-02 | 삼성전자 주식회사 | Method of manufacturing barrier metal layer using atomic layer deposition method |
US6458718B1 (en) | 2000-04-28 | 2002-10-01 | Asm Japan K.K. | Fluorine-containing materials and processes |
US6630413B2 (en) | 2000-04-28 | 2003-10-07 | Asm Japan K.K. | CVD syntheses of silicon nitride materials |
US6444027B1 (en) * | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
JP2001338988A (en) * | 2000-05-25 | 2001-12-07 | Hitachi Ltd | Semiconductor device and its manufacturing method |
US7141278B2 (en) * | 2000-06-08 | 2006-11-28 | Asm Genitech Korea Ltd. | Thin film forming method |
US6635588B1 (en) | 2000-06-12 | 2003-10-21 | Ultratech Stepper, Inc. | Method for laser thermal processing using thermally induced reflectivity switch |
US6303476B1 (en) | 2000-06-12 | 2001-10-16 | Ultratech Stepper, Inc. | Thermally induced reflectivity switch for laser thermal processing |
US6461909B1 (en) | 2000-08-30 | 2002-10-08 | Micron Technology, Inc. | Process for fabricating RuSixOy-containing adhesion layers |
US20020163013A1 (en) | 2000-09-11 | 2002-11-07 | Kenji Toyoda | Heterojunction bipolar transistor |
KR100814980B1 (en) * | 2000-09-28 | 2008-03-18 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | Vapor deposition of oxides, silicates, and phosphates |
KR100378186B1 (en) | 2000-10-19 | 2003-03-29 | 삼성전자주식회사 | Semiconductor device adopting thin film formed by atomic layer deposition and fabrication method thereof |
US6613695B2 (en) * | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
KR100869326B1 (en) * | 2000-11-30 | 2008-11-18 | 에이에스엠 인터내셔널 엔.브이. | thin films for magnetic devices |
KR100385947B1 (en) | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | Method of forming thin film by atomic layer deposition |
KR20020049875A (en) | 2000-12-20 | 2002-06-26 | 윤종용 | Ferroelectric capacitor in semiconductor memory device and method for manufacturing the same |
JP2002198525A (en) | 2000-12-27 | 2002-07-12 | Toshiba Corp | Semiconductor device and its manufacturing method |
KR100393208B1 (en) * | 2001-01-15 | 2003-07-31 | 삼성전자주식회사 | Semiconductor device using doped polycrystalline silicon-germanium layer and method for manufacturing the same |
US6426265B1 (en) * | 2001-01-30 | 2002-07-30 | International Business Machines Corporation | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
US6528374B2 (en) * | 2001-02-05 | 2003-03-04 | International Business Machines Corporation | Method for forming dielectric stack without interfacial layer |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
KR101050377B1 (en) | 2001-02-12 | 2011-07-20 | 에이에스엠 아메리카, 인코포레이티드 | Improved process for deposition of semiconductor films |
US20020117399A1 (en) | 2001-02-23 | 2002-08-29 | Applied Materials, Inc. | Atomically thin highly resistive barrier layer in a copper via |
CN1168121C (en) * | 2001-03-08 | 2004-09-22 | 中国科学院半导体研究所 | Doping ,method for gas source molecular beam epitaxial growth Ge-Si heterojunction bipolar transistor material |
JP3547419B2 (en) | 2001-03-13 | 2004-07-28 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JP3890202B2 (en) * | 2001-03-28 | 2007-03-07 | 株式会社日立製作所 | Manufacturing method of semiconductor device |
JP3730962B2 (en) | 2001-04-02 | 2006-01-05 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
JP2002343790A (en) | 2001-05-21 | 2002-11-29 | Nec Corp | Vapor-phase deposition method of metallic compound thin film and method for manufacturing semiconductor device |
US6905542B2 (en) | 2001-05-24 | 2005-06-14 | Arkadii V. Samoilov | Waveguides such as SiGeC waveguides and method of fabricating the same |
JP2004533118A (en) | 2001-05-30 | 2004-10-28 | エーエスエム アメリカ インコーポレイテッド | Low temperature loading and unloading and baking |
US6828218B2 (en) * | 2001-05-31 | 2004-12-07 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
EP1403929A4 (en) * | 2001-06-05 | 2008-06-04 | Sony Corp | Semiconductor layer and forming method therefor, and semiconductor device and production method therefor |
US6391803B1 (en) | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6861334B2 (en) * | 2001-06-21 | 2005-03-01 | Asm International, N.V. | Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition |
US20030198754A1 (en) | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
US6777317B2 (en) * | 2001-08-29 | 2004-08-17 | Ultratech Stepper, Inc. | Method for semiconductor gate doping |
US6806145B2 (en) * | 2001-08-31 | 2004-10-19 | Asm International, N.V. | Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer |
JP3660897B2 (en) * | 2001-09-03 | 2005-06-15 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
US6858537B2 (en) * | 2001-09-11 | 2005-02-22 | Hrl Laboratories, Llc | Process for smoothing a rough surface on a substrate by dry etching |
US6960537B2 (en) * | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
US20030072884A1 (en) * | 2001-10-15 | 2003-04-17 | Applied Materials, Inc. | Method of titanium and titanium nitride layer deposition |
US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6743681B2 (en) * | 2001-11-09 | 2004-06-01 | Micron Technology, Inc. | Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride |
US6551893B1 (en) | 2001-11-27 | 2003-04-22 | Micron Technology, Inc. | Atomic layer deposition of capacitor dielectric |
US6773507B2 (en) * | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US7081271B2 (en) * | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
US6696332B2 (en) * | 2001-12-26 | 2004-02-24 | Texas Instruments Incorporated | Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing |
US6790755B2 (en) | 2001-12-27 | 2004-09-14 | Advanced Micro Devices, Inc. | Preparation of stack high-K gate dielectrics with nitrided layer |
US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
US7175713B2 (en) | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
JP3914064B2 (en) | 2002-02-28 | 2007-05-16 | 富士通株式会社 | Method and apparatus for growing mixed crystal film |
US20030216981A1 (en) | 2002-03-12 | 2003-11-20 | Michael Tillman | Method and system for hosting centralized online point-of-sale activities for a plurality of distributed customers and vendors |
US6825134B2 (en) | 2002-03-26 | 2004-11-30 | Applied Materials, Inc. | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
JP3937892B2 (en) | 2002-04-01 | 2007-06-27 | 日本電気株式会社 | Thin film forming method and semiconductor device manufacturing method |
US7439191B2 (en) * | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
US6846516B2 (en) | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6869838B2 (en) | 2002-04-09 | 2005-03-22 | Applied Materials, Inc. | Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications |
US20030235961A1 (en) | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
US20030213560A1 (en) | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
US20030215570A1 (en) | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Deposition of silicon nitride |
US7105891B2 (en) * | 2002-07-15 | 2006-09-12 | Texas Instruments Incorporated | Gate structure and method |
US6723658B2 (en) * | 2002-07-15 | 2004-04-20 | Texas Instruments Incorporated | Gate structure and method |
US7449385B2 (en) * | 2002-07-26 | 2008-11-11 | Texas Instruments Incorporated | Gate dielectric and method |
US6919251B2 (en) * | 2002-07-31 | 2005-07-19 | Texas Instruments Incorporated | Gate dielectric and method |
US7186630B2 (en) * | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
KR100542736B1 (en) * | 2002-08-17 | 2006-01-11 | 삼성전자주식회사 | Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same |
US6927140B2 (en) * | 2002-08-21 | 2005-08-09 | Intel Corporation | Method for fabricating a bipolar transistor base |
US7199023B2 (en) * | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
US6759286B2 (en) * | 2002-09-16 | 2004-07-06 | Ajay Kumar | Method of fabricating a gate structure of a field effect transistor using a hard mask |
US6897131B2 (en) | 2002-09-20 | 2005-05-24 | Applied Materials, Inc. | Advances in spike anneal processes for ultra shallow junctions |
US6803297B2 (en) | 2002-09-20 | 2004-10-12 | Applied Materials, Inc. | Optimal spike anneal ambient |
US6839507B2 (en) | 2002-10-07 | 2005-01-04 | Applied Materials, Inc. | Black reflector plate |
US7540920B2 (en) | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US6998305B2 (en) | 2003-01-24 | 2006-02-14 | Asm America, Inc. | Enhanced selectivity for epitaxial deposition |
US7517768B2 (en) * | 2003-03-31 | 2009-04-14 | Intel Corporation | Method for fabricating a heterojunction bipolar transistor |
US20040226911A1 (en) * | 2003-04-24 | 2004-11-18 | David Dutton | Low-temperature etching environment |
US6982433B2 (en) * | 2003-06-12 | 2006-01-03 | Intel Corporation | Gate-induced strain for MOS performance improvement |
US6855963B1 (en) * | 2003-08-29 | 2005-02-15 | International Business Machines Corporation | Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate |
US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US7045432B2 (en) | 2004-02-04 | 2006-05-16 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device with local semiconductor-on-insulator (SOI) |
US7078302B2 (en) | 2004-02-23 | 2006-07-18 | Applied Materials, Inc. | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
WO2005116304A2 (en) * | 2004-04-23 | 2005-12-08 | Asm America, Inc. | In situ doped epitaxial films |
US20050241671A1 (en) | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for removing a substance from a substrate using electron attachment |
KR100625175B1 (en) | 2004-05-25 | 2006-09-20 | 삼성전자주식회사 | Semiconductor device having a channel layer and method of manufacturing the same |
US20060060920A1 (en) * | 2004-09-17 | 2006-03-23 | Applied Materials, Inc. | Poly-silicon-germanium gate stack and method for forming the same |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7682940B2 (en) | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
US20060286819A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Method for silicon based dielectric deposition and clean with photoexcitation |
US20060286774A1 (en) | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7601652B2 (en) | 2005-06-21 | 2009-10-13 | Applied Materials, Inc. | Method for treating substrates and films with photoexcitation |
US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
TW200713455A (en) * | 2005-09-20 | 2007-04-01 | Applied Materials Inc | Method to form a device on a SOI substrate |
-
2003
- 2003-10-10 US US10/683,937 patent/US7166528B2/en not_active Expired - Lifetime
-
2004
- 2004-09-21 CN CNB2004800326744A patent/CN100468625C/en active Active
- 2004-09-21 KR KR1020067008872A patent/KR20060110291A/en not_active Application Discontinuation
- 2004-09-21 WO PCT/US2004/030872 patent/WO2005038890A1/en active Application Filing
- 2004-09-21 CN CN2009100038065A patent/CN101483136B/en active Active
- 2004-09-21 JP JP2006533945A patent/JP4969244B2/en not_active Expired - Fee Related
- 2004-09-21 EP EP04784661A patent/EP1680808A1/en not_active Withdrawn
-
2006
- 2006-05-30 US US11/420,906 patent/US7517775B2/en not_active Expired - Lifetime
-
2008
- 2008-08-29 US US12/201,681 patent/US7737007B2/en not_active Expired - Fee Related
Non-Patent Citations (4)
Title |
---|
KAMINS T I ET AL: "KINETICS OF SELECTIVE EPITAXIAL DEPOSITION OF SI1-XGEX", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 61, no. 6, 10 August 1992 (1992-08-10), pages 669 - 671, XP000290127, ISSN: 0003-6951 * |
MENON C ET AL: "Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 90, no. 9, 1 November 2001 (2001-11-01), pages 4805 - 4809, XP012054441, ISSN: 0021-8979 * |
SEDGWICK T O ET AL: "SELECTIVE SIGE AND HEAVILY AS DOPED SI DEPOSITED AT LOW TEMPERATURE BY ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 11, no. 3, 1 May 1993 (1993-05-01), pages 1124 - 1128, XP000383206, ISSN: 1071-1023 * |
UCHINO T ET AL: "A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-/spl mu/m CMOS ULSIs", ELECTRON DEVICES MEETING, 1997. TECHNICAL DIGEST., INTERNATIONAL WASHINGTON, DC, USA 7-10 DEC. 1997, NEW YORK, NY, USA,IEEE, US, 7 December 1997 (1997-12-07), pages 479 - 482, XP010265551, ISBN: 0-7803-4100-7 * |
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CN101483136B (en) | 2012-02-29 |
US20090011578A1 (en) | 2009-01-08 |
US7166528B2 (en) | 2007-01-23 |
US20050079691A1 (en) | 2005-04-14 |
KR20060110291A (en) | 2006-10-24 |
CN1875461A (en) | 2006-12-06 |
JP2007514294A (en) | 2007-05-31 |
EP1680808A1 (en) | 2006-07-19 |
US7737007B2 (en) | 2010-06-15 |
US7517775B2 (en) | 2009-04-14 |
US20060234488A1 (en) | 2006-10-19 |
JP4969244B2 (en) | 2012-07-04 |
CN101483136A (en) | 2009-07-15 |
CN100468625C (en) | 2009-03-11 |
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