WO2005050777A2 - Receiver electronics proximate antenna - Google Patents
Receiver electronics proximate antenna Download PDFInfo
- Publication number
- WO2005050777A2 WO2005050777A2 PCT/US2004/038710 US2004038710W WO2005050777A2 WO 2005050777 A2 WO2005050777 A2 WO 2005050777A2 US 2004038710 W US2004038710 W US 2004038710W WO 2005050777 A2 WO2005050777 A2 WO 2005050777A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- receiver
- electronics
- received waveform
- resistivity tool
- resistivity
- Prior art date
Links
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
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Classifications
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- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
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- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
- E21B47/002—Survey of boreholes or wells by visual inspection
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
- E21B47/01—Devices for supporting measuring instruments on drill bits, pipes, rods or wirelines; Protecting measuring instruments in boreholes against heat, shock, pressure or the like
- E21B47/017—Protecting measuring instruments
- E21B47/0175—Cooling arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
- E21B47/01—Devices for supporting measuring instruments on drill bits, pipes, rods or wirelines; Protecting measuring instruments in boreholes against heat, shock, pressure or the like
- E21B47/017—Protecting measuring instruments
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V1/00—Seismology; Seismic or acoustic prospecting or detecting
- G01V1/40—Seismology; Seismic or acoustic prospecting or detecting specially adapted for well-logging
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/11—Structural features, others than packages, for protecting a device against environmental influences
- B81B2207/115—Protective layers applied directly to the device before packaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Definitions
- Formation sensors were suspended from a probe (or "sonde"), and the sonde is lowered into the borehole after some or all of the well has been drilled.
- the formation sensors are used to determine certain characteristics of the formations traversed by the borehole.
- the upper end of the sonde is attached to a conductive wireline that suspends the sonde in the borehole. Power is transmitted to the instruments in the sonde through the conductive wireline. Conversely, the instruments in the sonde communicate information to the surface using electrical signals transmitted through the wireline.
- An alternative method of logging is the collection of data during the drilling process. Collecting and processing data during the drilling process eliminates the necessity of removing the drilling assembly to insert a wireline logging tool.
- MWD Measurement-while-drilling
- LWD Logging- while-drilling
- the downhole sensors are typically positioned in a cylindrical drill collar positioned near the drill bit. While drilling is in progress these sensors continuously or intermittently monitor predetermined drilling parameters and formation data and transmit the information to a surface detector by some form of telemetry.
- a drilling rig 10 at the surface 12 of the well supports a drill string 14.
- the drill string 14 penetrates through a work platform 16 and into a borehole 18 that is drilled through earth formations 20 and 21.
- the drill string 14 may comprise coil tubing 24 from a spool 22 at its upper end, and a bottom hole assembly 26 (commonly referred to as a "BHA”) coupled to the lower end of the coil tubing 24.
- BHA bottom hole assembly
- the BHA 26 may include a drill bit 32, a downhole motor 40, one or more drill collars 28, resistivity tool 50 mounted on collar section 55, LWD sensors positioned in a collar section 55, directional MWD sensors located in a non-magnetic section 60, and one or more stabilizer(s) (not shown) for penetrating through earth formations to create the borehole 18.
- BHA 26 is defined as all of the downhole components from the top of the drill collars 28, down to the drill bit 32, including downhole motor 40.
- the drill collars 28, which also may be non-magnetic so as not to interfere with the MWD measurements, are used in accordance with conventional techniques to add weight to the drill bit 32 and to stiffen the BHA 26, thereby enabling the BHA 26 to transmit weight to the drill bit 32 without buckling.
- the weight applied through the drill collars 28 to the bit 32 permits the drill bit to penetrate underground formations.
- drilling fluid or mud is pumped from a mud pit 34 at the surface through the hose 37, into the tubing 24, and to the drill bit 32. After flowing through the drill bit 32, the drilling mud rises back to the surface through the annular area between the tubing 24 and the borehole 18, where it is collected and returned to the mud pit 34 for filtering.
- the drilling mud is used to lubricate and cool the drill bit 32 and to remove cuttings from the borehole 18.
- the drilling mud may also perform a number of other functions, which could include providing operating power to the downhole motor or other components downhole.
- the downhole motor or turbine 40 may be used downhole to rotate the drill bit 32.
- a downhole controller (not specifically shown in Figure 1) located in the downhole instrument sub 60 or elsewhere in the BHA controls the operation of the telemetry transmitter 28 and orchestrates the operation of the MWD and LWD sensors and other downhole instrument sub components.
- the controller may include data encoding circuitry that produces digitally encoded electrical data signals representative of the measurements obtained by the formation sensors and directional sensors.
- the controller also processes the data received from the sensors and produces encoded signals for transmission to the surface via the telemetry transmitter. The controller may also make decisions based upon the processed data.
- a resistivity tool subassembly 102 is shown.
- the subassembly 102 is provided with one or more regions 106 of reduced diameter.
- a wire coil 104 is placed in the region 106 and spaced away from the surface of subassembly 102 by a constant distance.
- Coils 104 and 108 are transmitter coils and coils 110 and 112 are receiving coils. In operation, transmitter coil 104, 108 transmits an interrogating electromagnetic signal which propagates through the wellbore and surrounding formation.
- Receiver coils 110, 112 detect the interrogating electromagnetic signal and transmits it to the controller, where it is digitized and processed.
- the controller calculates the electromagnetic signal's amplitude attenuation and phase shift between coils 110 and 112. From the amplitude attenuation and phase shift, the resistivity of the formation can be estimated using conventional techniques.
- a problem common to conventional designs is the degrading signal quality of the waveform signal as it is transmitted from the receiver to the controller.
- Figure 3 includes a receiver 301 having two ends that terminate at circuit card 305.
- Line 320 that supplies power to electronics in circuit card 305 and signal line 325 that carries the analog waveform from circuit card 305 are also shown.
- the circuit card 305 is generally an industry standard-size circuit board that includes receiver circuitry to detect electrical signals and a transmitter for transmitting the analog waveform to the controller. It can be replaced by any other appropriate circuitry for impedance matching and for transmitting the analog waveform to the controller.
- a controller is conventionally located up to several feet from at least one of the receiving antennas.
- the wiring between the antennas and the controller carries weak (nano-volt level) analog signals, however. This makes these signals susceptible to noise, grounding, pick-up, cross-talk and vibration issues.
- transmitter coil 401, receiver coil 402, and receiver coil 403 each couple to controller 405 through respective circuit cards 411, 412, and 413.
- the transmitter circuit card has impedance-matching circuitry whereas the receiver circuit card has filtering electronics.
- Controller 405 includes a microprocessor as well as conditioning and processing components for each receiver channel.
- each receiver channel may include bandpass filters, a pre-amplifier, gain stabilizer, and an analog-to-digital converter.
- the processor operates on the waveform data from each receiver coil to establish the phase shift and attenuation between or among the waveforms to generate formation resistivity data.
- Electromigration is the movement of metal atoms caused by the flow of electrons. Electromigration can lead to the thinning and separation of interconnections within an integrated circuit. Over time, metal migration tends to degrade performance of the electronics when these electronics are exposed to high temperature. Efforts have been made to design electronics for use at high temperatures (i.e., above 185° Celsius). However, these efforts have not yielded an ideal, or in many cases even satisfactory, solution. For example, because the electronics are resident in the borehole for only a limited time, the electronics may be shielded from the elevated temperatures by insulation, heat-absorbing materials, and/or active refrigeration. These traditional approaches to configuring electronics for elevated temperature operation have been motivated by the poor performance of many electronics when they are directly exposed to environments with temperatures above 185 Celsius.
- SOI silicon- on-insulator
- This technology generally describes a three-layer construction. Silicon is used as the first, bottom layer. The second, middle layer is made from a type of insulator known to those of ordinary skill. The third top layer is made from silicon. This construction has been satisfactory but is still subject to improvement. Space limitations downhole can be severe, and part prevent design or installation of a cooling system to cool these electronics even if it were otherwise feasible. A resistivity tool is needed that overcomes these transmission problems.
- resistivity tool that is suitable for use at temperatures well in excess of 200° C. It is desirable for this resistivity tool to stay resident in wells indefinitely at elevated temperatures. Ideally, such data acquisition systems would be compact and able to withstand vibration.
- Figure 1 is a shows a representative logging-while-drilling (LWD) configuration
- Figure 2 shows antenna loops of a resistivity tool wrapped around the outside of a drill collar
- Figure 3 is a schematic of a conventional resistivity antenna
- Figure 4 is a schematic diagram of a resistivity tool and controller located remotely
- Figure 5 shows a conventional silicon-on-insulator semiconductor design
- Figure 6A shows an external view of a resistivity tool according to one embodiment of the invention
- Figure 6B is a schematic diagram of receiver electronics proximate a receiver coil antenna
- Figure 6C is a schematic diagram of one embodiment of the invention
- Figure 7A is a two-layer silicon-on-sapphire design suitable for one embodiment of the invention
- Figure 7B is a two-layer silicon-on-insulator design suitable for one embodiment of the invention
- Figure 8 is a flow diagram according to one
- FIGS. 6A and 6B illustrate a resistivity tool design according to one embodiment of the invention.
- resistivity tool subassembly 602 is shown.
- the subassembly 602 is provided with one or more regions 606 of reduced diameter.
- a wire coil 604 is placed in the region 606 and spaced away from the surface of subassembly 602 by a constant distance.
- Coils 604 and 608 are transmitter coils and coils 610 and 612 are receiving coils. In operation, transmitter coil
- a controller 622 may be located remotely from the receiver coils (such as inside a bottom hole assembly) and includes at least a microprocessor. A source of power is also necessary in the system.
- a circuit card 614 may couple to transmitter coil 604 between its terminal ends, circuit card 616 may couple to transmitter coil 608 between its terminal ends, circuit card 618 may couple to receiver coil 610 between its terminal ends, and circuit card 620 may couple to receiver coil 612 between its terminal ends.
- Each circuit card 618, 620 contains circuitry to preprocess the signal from the receiver coil.
- FIG. 6B shows a number of packaged integrated circuit chips 632 mounted on a circuit card 634.
- the circuit card 634 is shown attached to a connector 636 suitable for connecting the circuit card 634 to a receiver coil. There may also be short leads between receiver antennae and receiver electronics.
- connectors 638 suitable for connecting the circuit card to the a microprocessor, or power supply, other appropriate device.
- the circuit card 634 provides physical support and electrical interconnections for the packaged chips 632, connectors 636, 638, and other components attached to the card.
- Each chip package 632 can take the form of a multi-chip module, i.e., a package having a substrate upon which are mounted multiple integrated circuit die. The substrate provides physical support and electrical interconnections between the multiple die and also between the die and external pins or pads.
- each circuit card 618 and 620 contains receiver electronics to pre- process the waveform detected by the respective receiver coil and sent to the controller.
- Each circuit card 618 and 620 also couples to a remote power supply, and to a microprocessor, preferably in the controller.
- a single cable may carry both power and the transmitted waveform signal to and from receiver electronics, or the waveform signal and power may travel on separate transmission lines.
- the invention is not limited by the number of receiver coils or transmitter coils that are included in the resistivity tool. Any appropriate number of receiver coils may be employed, and additional transmitter coils added.
- the invention also includes variation among the electronics associated with each coil, e.g. each set of receiver electronics may or may not be identical to any other receiver electronics.
- the receiver electronics may include any or all of the following, as appropriate: a pre-amplifier that increases the signals to be transmitted over the wire to the microprocessor; 2. filters coupled to the signal cable, where the signal cable is configured to deliver power to the receiver electronics; 3.
- FIG. 6C shows a schematic according to one embodiment of the invention.
- the signal from the receiver enters into an input transformer 642.
- Calibration signal 646 enters into calibration transformer 644, where it is then transmitted to input transformer 642.
- Output signal from the input transformer 642 is provided to an active differential mode input stage 648.
- the active differential mode input stage 648 connects to an active variable gain stage on the output side of the active differential mode input stage 648.
- the active variable gain stage is controlled by the digital gain control from the controller (controller not shown in Figure 6C) via a serial to parallel shift register 652.
- Bandpass filters and a multiplexer 654 connects to the output side of the active variable gain stage 650.
- Serial to parallel shift register 652 also connects to the bandpass filters 654 to affect the frequency band selected by the bandpass filters.
- Output from the Bandpass filters and a multiplexer 654 connects to active common mode to differential mode stage 656.
- Output from the active common mode to differential mode stage 656 inputs to an analog to digital converter.
- the receiver electronics may include other components as well. The decision on the particular electronic components placed near the receiver antenna is left to the tool designer. It can be appreciated that placement of pre-processing electronics proximate the receiver results in improved performance of the resistivity tool.
- Amplification of the received signal at the receiver by a pre-amplifier improves the signal- to-noise ratio of the analog waveform signal after it is transmitted from the receiver to the microprocessor.
- the noise remains the same while the transmitted signal is amplified so signal-to- noise ratio is improved.
- numerous other problems, such as cross-talk and interference can be eliminated or substantially reduced by transformation of the waveform at a receiver into a digital signal, which is then transmitted to the microprocessor.
- the prior art circuit card referred to with reference to Figure 3 generally has an industry- standard size.
- the receiver electronics may be placed on a circuit card having the same size as the known impedance-matching circuit card of conventional designs. Consequently, a circuit card built according to at least one embodiment of the invention may be placed in the same location between the terminal ends of a transmitter coil or receiver coil as a conventional inductance-matching circuit card. Having the industry-standard size for a circuit card built according to the invention is expected to simplify installation and design, and increase the commercial feasibility of the invention. It should be noted that, although advantageous, placement of the electronics in the circuit card is not a requirement of the invention.
- One embodiment of the invention places electronics for each transmitter and receiver at most a foot from the respective transmitter or receiver. More preferably, the electronics are less than six inches from the respective transmitter or receiver.
- Silicon on insulator may be used to implement the invention, and the broader embodiments of the invention include a silicon-on-insulator design as shown in Figure 7B.
- the technology uses silicon films grown or deposited on insulating substrates. By manufacturing integrated circuits onto an insulating substrate, the effects of high temperature operation, such as leakage current through the substrate, may be reduced so that the high temperature operation does not severely and/or adversely affect operation.
- the insulator upon which the components are constructed may be any suitable insulator, such as sapphire and spinel.
- the silicon film may be masked etched and doped to create components, such as transistors, diodes, resistors and capacitors, which components in combination perform desired functions.
- the wafer substrate is about 1 mm thick, while the semiconducting layer may (for example) be 10 "8 to 10 "4 m thick.
- the thickness of the conducting layers may be around 10-100 nm thick.
- silicon-on-sapphire refers to an insulating base layer made of sapphire coated by a silicon layer.
- this is silicon on an insulator.
- SOI silicon on insulator
- One difficulty when miniaturizing electronics is often the parasitic capacitances that arise. These parasitic capacitances interfere with the operation of the electronics. Thus, when miniaturization of electronics is being sought, it is desirable to minimize parasitic capacitances.
- the silicon-on-insulator (three layer) design is an insulator layer sandwiched between two layers of conductive silicon.
- an insulator between two conductors is generally analogous to the design for a basic capacitor.
- use of this three layer design tends to result in parasitic capacitances.
- Use of a two-layer silicon-on-insulator design, such as silicon on sapphire reduces the inherent parasitic capacitance of the design because a two layer design is being used, not a three layer design (i.e. a conductor-resistor-conductor sandwich). Reduction of the capacitance allows higher frequencies to be used, and lowers power requirements.
- FIG 8 is a flowchart of a method according to one embodiment of the invention.
- a signal is transmitted through the formation at step 801.
- the signal is received at a first and a second receiver placed on the outside of a drill collar at step 802.
- the receivers generate first and second received waveforms.
- the first and second waveforms are processed proximate the first and secon receivers, respectively, at steps 803 and 804. Steps 803 and 804 are expected to generally occur simultaneously.
- the processed first received waveform and processed second received waveform are transmitted to a location remote from the first receiver (sucli as a controller).
- the resistivity value is computed for the formation at step 806.
- the invention minimizes interference, noise and cross-talk issues on the wires from a resistivity tool receiver to the conditioning electronics by placement of the conditioning/electronics proximate the receiver antenna, preferably at the location of the receiver circuit cards. Historically, this has been prohibitive because of space limitations, and also because the electronics would be located near the outer surface of the drill collar. While preferred embodiments of this invention have been shown and described, modifications thereof can be made by one skilled in the art without departing from the spirit or teaching of this invention. The embodiments described herein are exemplary only and are not limiting. Many variations and modifications of the system and apparatus are possible and are within the scope of the invention. Accordingly, the scope of protection is not limited to the embodiments described herein, but is only limited by the claims which follow, the scope of which shall include all equivalents of the subject matter of the claims.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Mining & Mineral Resources (AREA)
- General Physics & Mathematics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geophysics (AREA)
- Environmental & Geological Engineering (AREA)
- Power Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Fluid Mechanics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Acoustics & Sound (AREA)
- Remote Sensing (AREA)
- Semiconductor Integrated Circuits (AREA)
- Arrangements For Transmission Of Measured Signals (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Structure Of Receivers (AREA)
- Drilling Tools (AREA)
- Chemical Vapour Deposition (AREA)
- Forging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
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Abstract
Description
Claims
Applications Claiming Priority (4)
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US52095003P | 2003-11-18 | 2003-11-18 | |
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US60/520,950 | 2003-11-18 |
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PCT/US2004/038710 WO2005050777A2 (en) | 2003-11-18 | 2004-11-18 | Receiver electronics proximate antenna |
PCT/US2004/038793 WO2005050714A2 (en) | 2003-11-18 | 2004-11-18 | High temperature electronic devices |
PCT/US2004/038791 WO2005049957A2 (en) | 2003-11-18 | 2004-11-18 | High temperature environment tool system and method |
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PCT/US2004/038791 WO2005049957A2 (en) | 2003-11-18 | 2004-11-18 | High temperature environment tool system and method |
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US (3) | US7307425B2 (en) |
EP (3) | EP1687837A4 (en) |
JP (1) | JP4769729B2 (en) |
CN (1) | CN101095239B (en) |
AU (2) | AU2004291942C1 (en) |
CA (1) | CA2543909C (en) |
GB (1) | GB2425177B (en) |
NO (2) | NO341264B1 (en) |
WO (4) | WO2005050257A2 (en) |
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