WO2005053033A3 - Trench insulated gate field-effect transistor - Google Patents

Trench insulated gate field-effect transistor Download PDF

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Publication number
WO2005053033A3
WO2005053033A3 PCT/IB2004/052563 IB2004052563W WO2005053033A3 WO 2005053033 A3 WO2005053033 A3 WO 2005053033A3 IB 2004052563 W IB2004052563 W IB 2004052563W WO 2005053033 A3 WO2005053033 A3 WO 2005053033A3
Authority
WO
WIPO (PCT)
Prior art keywords
effect transistor
insulated gate
gate field
trench insulated
trench
Prior art date
Application number
PCT/IB2004/052563
Other languages
French (fr)
Other versions
WO2005053033A2 (en
Inventor
Raymond J E Hueting
Erwin A Hijzen
Original Assignee
Koninkl Philips Electronics Nv
Raymond J E Hueting
Erwin A Hijzen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Raymond J E Hueting, Erwin A Hijzen filed Critical Koninkl Philips Electronics Nv
Priority to JP2006540763A priority Critical patent/JP2007512701A/en
Priority to EP04799253A priority patent/EP1692727A2/en
Priority to US10/580,619 priority patent/US7696599B2/en
Publication of WO2005053033A2 publication Critical patent/WO2005053033A2/en
Publication of WO2005053033A3 publication Critical patent/WO2005053033A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Abstract

The invention relates to a trench MOSFET with drain (8), drift region (10) body (12) and source (14). In order to improve the figure of merit for use of the MOSFET as control and sync FETs, the trench (20) is partially filled with dielectric (24) adjacent to the drift region (10) and a graded doping profile is used in the drift region (10).
PCT/IB2004/052563 2003-11-29 2004-11-26 Trench insulated gate field-effect transistor WO2005053033A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006540763A JP2007512701A (en) 2003-11-29 2004-11-26 Trench MOSFET
EP04799253A EP1692727A2 (en) 2003-11-29 2004-11-26 Trench insulated gate field-effect transistor
US10/580,619 US7696599B2 (en) 2003-11-29 2004-11-26 Trench MOSFET

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0327793.6A GB0327793D0 (en) 2003-11-29 2003-11-29 Trench mosfet
GB0327793.6 2003-11-29

Publications (2)

Publication Number Publication Date
WO2005053033A2 WO2005053033A2 (en) 2005-06-09
WO2005053033A3 true WO2005053033A3 (en) 2006-03-09

Family

ID=29798072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2004/052563 WO2005053033A2 (en) 2003-11-29 2004-11-26 Trench insulated gate field-effect transistor

Country Status (6)

Country Link
US (1) US7696599B2 (en)
EP (1) EP1692727A2 (en)
JP (1) JP2007512701A (en)
CN (1) CN100546046C (en)
GB (1) GB0327793D0 (en)
WO (1) WO2005053033A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
JP5452003B2 (en) * 2008-09-23 2014-03-26 三菱電機株式会社 Semiconductor chip manufacturing method and semiconductor module manufacturing method
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US20120220092A1 (en) * 2009-10-21 2012-08-30 Vishay-Siliconix Method of forming a hybrid split gate simiconductor
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US10026835B2 (en) * 2009-10-28 2018-07-17 Vishay-Siliconix Field boosted metal-oxide-semiconductor field effect transistor
EP2543072B1 (en) 2010-03-02 2021-10-06 Vishay-Siliconix Structures and methods of fabricating dual gate devices
JP2014518017A (en) 2011-05-18 2014-07-24 ビシャイ‐シリコニックス Semiconductor device
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
KR102026543B1 (en) 2014-08-19 2019-09-27 비쉐이-실리코닉스 Electronic circuit
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
JP7247061B2 (en) 2019-09-05 2023-03-28 株式会社東芝 Semiconductor device and its manufacturing method
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
DE212020000841U1 (en) 2020-11-04 2023-10-05 Hitachi Energy Switzerland Ag Power field effect transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US5981996A (en) * 1995-02-17 1999-11-09 Fuji Electric Co., Ltd. Vertical trench misfet and method of manufacturing the same
WO2000033386A2 (en) * 1998-11-28 2000-06-08 Koninklijke Philips Electronics N.V. Trench-gate semiconductor devices and their manufacture
EP1054451A2 (en) * 1999-05-19 2000-11-22 Intersil Corporation MOS-gated power device having extended trench and doping zone and process for forming same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132753A (en) * 1990-03-23 1992-07-21 Siliconix Incorporated Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
US6433385B1 (en) * 1999-05-19 2002-08-13 Fairchild Semiconductor Corporation MOS-gated power device having segmented trench and extended doping zone and process for forming same
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
US6455378B1 (en) * 1999-10-26 2002-09-24 Hitachi, Ltd. Method of manufacturing a trench gate power transistor with a thick bottom insulator
JP4528460B2 (en) * 2000-06-30 2010-08-18 株式会社東芝 Semiconductor element
US6849898B2 (en) * 2001-08-10 2005-02-01 Siliconix Incorporated Trench MIS device with active trench corners and thick bottom oxide
TWI241012B (en) * 2004-06-25 2005-10-01 Mosel Vitelic Inc Method of manufacturing power device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981996A (en) * 1995-02-17 1999-11-09 Fuji Electric Co., Ltd. Vertical trench misfet and method of manufacturing the same
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
WO2000033386A2 (en) * 1998-11-28 2000-06-08 Koninklijke Philips Electronics N.V. Trench-gate semiconductor devices and their manufacture
EP1054451A2 (en) * 1999-05-19 2000-11-22 Intersil Corporation MOS-gated power device having extended trench and doping zone and process for forming same

Also Published As

Publication number Publication date
JP2007512701A (en) 2007-05-17
US7696599B2 (en) 2010-04-13
CN1886836A (en) 2006-12-27
EP1692727A2 (en) 2006-08-23
GB0327793D0 (en) 2003-12-31
WO2005053033A2 (en) 2005-06-09
US20070108515A1 (en) 2007-05-17
CN100546046C (en) 2009-09-30

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