WO2005059971A3 - Active matrix pixel device with photo sensor - Google Patents

Active matrix pixel device with photo sensor Download PDF

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Publication number
WO2005059971A3
WO2005059971A3 PCT/IB2004/052778 IB2004052778W WO2005059971A3 WO 2005059971 A3 WO2005059971 A3 WO 2005059971A3 IB 2004052778 W IB2004052778 W IB 2004052778W WO 2005059971 A3 WO2005059971 A3 WO 2005059971A3
Authority
WO
WIPO (PCT)
Prior art keywords
amorphous silicon
diode
tft
region
active matrix
Prior art date
Application number
PCT/IB2004/052778
Other languages
French (fr)
Other versions
WO2005059971A2 (en
Inventor
Steven C Deane
Original Assignee
Koninkl Philips Electronics Nv
Steven C Deane
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0329002A external-priority patent/GB0329002D0/en
Application filed by Koninkl Philips Electronics Nv, Steven C Deane filed Critical Koninkl Philips Electronics Nv
Priority to JP2006544657A priority Critical patent/JP2007524197A/en
Priority to US10/596,380 priority patent/US7514762B2/en
Priority to EP04806570A priority patent/EP1697993A2/en
Publication of WO2005059971A2 publication Critical patent/WO2005059971A2/en
Publication of WO2005059971A3 publication Critical patent/WO2005059971A3/en
Priority to US12/391,334 priority patent/US8067277B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System

Abstract

An active matrix pixel device is provided, for example an electroluminescent display device, the device comprising circuitry supported by a substrate and including a polysilicon TFT (10) and an amorphous silicon thin film PIN diode (12). Polysilicon islands are formed before an amorphous silicon layer is deposited for the PIN diode. This avoids the exposure of the amorphous silicon to high temperature processing. The TFT comprises doped source/drain regions (16a,17a), one of which (17a) may also provide the n­type or p-type doped region for the diode. Advantageously, the requirement to provide a separate doped region for the photodiode is removed, thereby saving processing costs. A second TFT (10b) having a doped source/drain region (16b,17b) of the opposite conductivity type may provide the other doped region (16b) for the diode, wherein the intrinsic region (25) is disposed laterally between the two TFTs, overlying each of the respective polysilicon islands.
PCT/IB2004/052778 2003-12-15 2004-12-13 Active matrix pixel device with photo sensor WO2005059971A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006544657A JP2007524197A (en) 2003-12-15 2004-12-13 Active matrix pixel device with optical sensor
US10/596,380 US7514762B2 (en) 2003-12-15 2004-12-13 Active matrix pixel device with photo sensor
EP04806570A EP1697993A2 (en) 2003-12-15 2004-12-13 Active matrix pixel device with photo sensor
US12/391,334 US8067277B2 (en) 2003-12-15 2009-02-24 Active matrix device with photo sensor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0329002.0 2003-12-15
GB0329002A GB0329002D0 (en) 2003-12-15 2003-12-15 Photo sensor
GB0426413A GB0426413D0 (en) 2003-12-15 2004-12-02 Active matrix pixel device with photo sensor
GB0426413.1 2004-12-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/391,334 Division US8067277B2 (en) 2003-12-15 2009-02-24 Active matrix device with photo sensor

Publications (2)

Publication Number Publication Date
WO2005059971A2 WO2005059971A2 (en) 2005-06-30
WO2005059971A3 true WO2005059971A3 (en) 2005-08-04

Family

ID=34702507

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2004/052778 WO2005059971A2 (en) 2003-12-15 2004-12-13 Active matrix pixel device with photo sensor

Country Status (5)

Country Link
US (2) US7514762B2 (en)
EP (1) EP1697993A2 (en)
JP (1) JP2007524197A (en)
KR (1) KR20070003784A (en)
WO (1) WO2005059971A2 (en)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998656B2 (en) * 2003-02-07 2006-02-14 Hewlett-Packard Development Company, L.P. Transparent double-injection field-effect transistor
CA2419704A1 (en) 2003-02-24 2004-08-24 Ignis Innovation Inc. Method of manufacturing a pixel with organic light-emitting diode
EP1697993A2 (en) * 2003-12-15 2006-09-06 Koninklijke Philips Electronics N.V. Active matrix pixel device with photo sensor
CA2495726A1 (en) 2005-01-28 2006-07-28 Ignis Innovation Inc. Locally referenced voltage programmed pixel for amoled displays
KR101367139B1 (en) * 2006-02-06 2014-02-26 삼성디스플레이 주식회사 Display device and manufacturing method of the same
EP1816681A3 (en) * 2006-02-06 2012-05-30 Samsung Electronics Co., Ltd. Display device and manufacturing method of the same
US7397065B2 (en) * 2006-05-02 2008-07-08 Tpo Displays Corp. Organic electroluminescent device and fabrication methods thereof
KR100769444B1 (en) * 2006-06-09 2007-10-22 삼성에스디아이 주식회사 Organic light emitting diode
US20080061678A1 (en) * 2006-09-12 2008-03-13 Matsushita Electric Industrial Co., Ltd. Light emitting device
KR101365491B1 (en) * 2006-11-17 2014-02-24 삼성디스플레이 주식회사 Display device
JP2008171871A (en) * 2007-01-09 2008-07-24 Hitachi Displays Ltd Highly sensitive photo-sensor element and photo-sensor device using the same
KR100849824B1 (en) 2007-03-09 2008-07-31 동부일렉트로닉스 주식회사 Image sensor and method for manufacturing thereof
JP2008235756A (en) * 2007-03-23 2008-10-02 Sony Corp Light receiving element and display apparatus with the same
JP5338032B2 (en) * 2007-03-26 2013-11-13 セイコーエプソン株式会社 Electro-optical device and electronic apparatus
JP2008277710A (en) * 2007-05-07 2008-11-13 Sony Corp Light receiving element and display unit equipped with the same
JP4924224B2 (en) * 2007-06-13 2012-04-25 セイコーエプソン株式会社 Photodetector built-in display device and electronic device
WO2008156023A1 (en) * 2007-06-21 2008-12-24 Sharp Kabushiki Kaisha Photodetector and display device provided with same
JP5058256B2 (en) * 2007-06-21 2012-10-24 シャープ株式会社 Photodetector and display device including the same
KR100882679B1 (en) * 2007-09-14 2009-02-06 삼성모바일디스플레이주식회사 Light emitting display device and fabrication method for the same
KR100884458B1 (en) * 2007-09-14 2009-02-20 삼성모바일디스플레이주식회사 Organic light emitting device and method of manufacturing the same
TWI347682B (en) * 2007-09-28 2011-08-21 Prime View Int Co Ltd A photo sensor and a method for manufacturing thereof
TWI324832B (en) * 2007-10-23 2010-05-11 Au Optronics Corp Photo sensor and fabrication method thereof
JP4924390B2 (en) * 2007-12-03 2012-04-25 セイコーエプソン株式会社 Light emitting device, electronic equipment
US7955890B2 (en) * 2008-06-24 2011-06-07 Applied Materials, Inc. Methods for forming an amorphous silicon film in display devices
JP2010073974A (en) * 2008-09-19 2010-04-02 Toshiba Corp Photo-detector, photo-detection device, and display device with photo-detection function
JP5275739B2 (en) * 2008-10-03 2013-08-28 株式会社ジャパンディスプレイウェスト Sensor element and driving method thereof
JP4688229B2 (en) * 2008-10-03 2011-05-25 東芝モバイルディスプレイ株式会社 Display device
KR101100999B1 (en) * 2009-01-13 2011-12-29 삼성모바일디스플레이주식회사 CMOS Thin Film Transistor and fabrication method thereof and Organic Light Emitting Display device using thereof
KR101048965B1 (en) * 2009-01-22 2011-07-12 삼성모바일디스플레이주식회사 Organic electroluminescent display
JP5330877B2 (en) * 2009-03-26 2013-10-30 株式会社東芝 Photodetection device and display device
US8283967B2 (en) 2009-11-12 2012-10-09 Ignis Innovation Inc. Stable current source for system integration to display substrate
US20120256304A1 (en) * 2009-11-13 2012-10-11 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
US8298887B2 (en) * 2009-12-03 2012-10-30 Applied Materials, Inc. High mobility monolithic p-i-n diodes
CN102725961B (en) * 2010-01-15 2017-10-13 株式会社半导体能源研究所 Semiconductor devices and electronic equipment
KR20130041711A (en) * 2010-05-11 2013-04-25 파나소닉 액정 디스플레이 주식회사 Thin film semiconductor device for display apparatus and method thereof
KR101735587B1 (en) 2010-09-06 2017-05-25 삼성디스플레이 주식회사 Photo sensor, method of manufacturing photo sensor and display apparatus
US8861909B2 (en) 2011-02-17 2014-10-14 Cornell University Polysilicon photodetector, methods and applications
US9606607B2 (en) 2011-05-17 2017-03-28 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
US8901579B2 (en) 2011-08-03 2014-12-02 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
US9385169B2 (en) 2011-11-29 2016-07-05 Ignis Innovation Inc. Multi-functional active matrix organic light-emitting diode display
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
KR101434366B1 (en) * 2012-08-24 2014-08-26 삼성디스플레이 주식회사 Thin-film transistor array substrate, display apparatus comprising the same
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
DE112014001402T5 (en) 2013-03-15 2016-01-28 Ignis Innovation Inc. Dynamic adjustment of touch resolutions of an Amoled display
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
KR102153131B1 (en) 2014-02-26 2020-09-08 삼성디스플레이 주식회사 Pixel and organic light emitting device including the same
US10997901B2 (en) 2014-02-28 2021-05-04 Ignis Innovation Inc. Display system
JP2015187854A (en) 2014-03-13 2015-10-29 株式会社半導体エネルギー研究所 Input device and input/output device
US10176752B2 (en) 2014-03-24 2019-01-08 Ignis Innovation Inc. Integrated gate driver
TWI655442B (en) 2014-05-02 2019-04-01 日商半導體能源研究所股份有限公司 Input/output device
CA2872563A1 (en) 2014-11-28 2016-05-28 Ignis Innovation Inc. High pixel density array architecture
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2898282A1 (en) 2015-07-24 2017-01-24 Ignis Innovation Inc. Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2900170A1 (en) 2015-08-07 2017-02-07 Gholamreza Chaji Calibration of pixel based on improved reference values
CA2909813A1 (en) 2015-10-26 2017-04-26 Ignis Innovation Inc High ppi pattern orientation
CN105789324B (en) * 2016-04-15 2019-05-03 京东方科技集团股份有限公司 Sensor and its manufacturing method, electronic equipment
RU2634324C1 (en) * 2016-05-18 2017-10-25 Публичное акционерное общество "Интерсофт Евразия", ПАО "Интерсофт Евразия" Ionizing radiation sensor based on silicon of crucible-free melting zone of p-type conductivity
DE102017222059A1 (en) 2016-12-06 2018-06-07 Ignis Innovation Inc. Pixel circuits for reducing hysteresis
US10714018B2 (en) 2017-05-17 2020-07-14 Ignis Innovation Inc. System and method for loading image correction data for displays
CN107240611B (en) 2017-06-02 2019-11-12 京东方科技集团股份有限公司 A kind of photoelectric detector and preparation method thereof, touch base plate and display panel
CN107393830A (en) * 2017-07-21 2017-11-24 京东方科技集团股份有限公司 The preparation method of thin film transistor (TFT)
US11025899B2 (en) 2017-08-11 2021-06-01 Ignis Innovation Inc. Optical correction systems and methods for correcting non-uniformity of emissive display devices
KR102517726B1 (en) * 2017-12-05 2023-04-03 엘지디스플레이 주식회사 Array substrate for digital x-ray detector, digital x-ray detector including the same and the manufacturing method thereof
US10971078B2 (en) 2018-02-12 2021-04-06 Ignis Innovation Inc. Pixel measurement through data line
US11869895B2 (en) 2018-09-28 2024-01-09 Wuhan China Star Optoelectronics Technology Co., Ltd. Display panel and manufacturing method thereof
CN109148504A (en) * 2018-09-28 2019-01-04 武汉华星光电技术有限公司 Display panel and its manufacturing method
CN109686808B (en) 2018-12-27 2021-07-23 厦门天马微电子有限公司 Diode and manufacturing method thereof, array substrate and display panel
CN110120411B (en) 2019-05-29 2021-08-06 京东方科技集团股份有限公司 Array substrate and display device
CN111370524B (en) 2020-03-18 2021-07-23 武汉华星光电技术有限公司 Photosensitive sensor, preparation method thereof, array substrate and display panel
CN112992951B (en) * 2021-02-07 2022-07-12 京东方科技集团股份有限公司 Display panel, preparation method thereof and display device
TW202332072A (en) * 2022-01-19 2023-08-01 友達光電股份有限公司 Sensing device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862237A (en) * 1983-01-10 1989-08-29 Seiko Epson Corporation Solid state image sensor
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
EP0634800A1 (en) * 1993-07-12 1995-01-18 Philips Electronics Uk Limited An imaging device
US5589694A (en) * 1993-03-22 1996-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a thin film transistor and thin film diode
US20010052597A1 (en) * 2000-06-20 2001-12-20 U.S. Philips Corporation Light-emitting matrix array display devices with light sensing elements

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910006249B1 (en) * 1983-04-01 1991-08-17 가부시기가이샤 히다찌세이사꾸쇼 Semiconductor device
JPS6351681A (en) * 1986-08-20 1988-03-04 Agency Of Ind Science & Technol Semiconductor device
US5275851A (en) * 1993-03-03 1994-01-04 The Penn State Research Foundation Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
JP3193803B2 (en) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor element
US5488000A (en) * 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
JP2003509728A (en) 1999-09-11 2003-03-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Active matrix EL display device
GB0219771D0 (en) * 2002-08-24 2002-10-02 Koninkl Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuit elements
EP1697993A2 (en) * 2003-12-15 2006-09-06 Koninklijke Philips Electronics N.V. Active matrix pixel device with photo sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862237A (en) * 1983-01-10 1989-08-29 Seiko Epson Corporation Solid state image sensor
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
US5589694A (en) * 1993-03-22 1996-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a thin film transistor and thin film diode
EP0634800A1 (en) * 1993-07-12 1995-01-18 Philips Electronics Uk Limited An imaging device
US20010052597A1 (en) * 2000-06-20 2001-12-20 U.S. Philips Corporation Light-emitting matrix array display devices with light sensing elements

Also Published As

Publication number Publication date
JP2007524197A (en) 2007-08-23
US20070093007A1 (en) 2007-04-26
EP1697993A2 (en) 2006-09-06
US7514762B2 (en) 2009-04-07
WO2005059971A2 (en) 2005-06-30
US8067277B2 (en) 2011-11-29
US20090162961A1 (en) 2009-06-25
KR20070003784A (en) 2007-01-05

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