WO2005081940A3 - Magnetically enhanced, inductively coupled plasma source for a focused ion beam system - Google Patents
Magnetically enhanced, inductively coupled plasma source for a focused ion beam system Download PDFInfo
- Publication number
- WO2005081940A3 WO2005081940A3 PCT/US2005/005643 US2005005643W WO2005081940A3 WO 2005081940 A3 WO2005081940 A3 WO 2005081940A3 US 2005005643 W US2005005643 W US 2005005643W WO 2005081940 A3 WO2005081940 A3 WO 2005081940A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ion beam
- inductively coupled
- coupled plasma
- plasma source
- focused ion
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/241—High voltage power supply or regulation circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006554300A JP5172154B2 (en) | 2004-02-20 | 2005-02-18 | Magnetically amplified inductively coupled plasma source for focused ion beam systems |
EP05713954A EP1725697A4 (en) | 2004-02-20 | 2005-02-18 | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54614204P | 2004-02-20 | 2004-02-20 | |
US60/546,142 | 2004-02-20 | ||
US10/988,745 US7241361B2 (en) | 2004-02-20 | 2004-11-13 | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
US10/988,745 | 2004-11-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005081940A2 WO2005081940A2 (en) | 2005-09-09 |
WO2005081940A3 true WO2005081940A3 (en) | 2007-07-12 |
Family
ID=34864552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/005643 WO2005081940A2 (en) | 2004-02-20 | 2005-02-18 | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
Country Status (4)
Country | Link |
---|---|
US (5) | US7241361B2 (en) |
EP (1) | EP1725697A4 (en) |
JP (1) | JP5172154B2 (en) |
WO (1) | WO2005081940A2 (en) |
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US8736177B2 (en) | 2010-09-30 | 2014-05-27 | Fei Company | Compact RF antenna for an inductively coupled plasma ion source |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7176469B2 (en) * | 2002-05-22 | 2007-02-13 | The Regents Of The University Of California | Negative ion source with external RF antenna |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4625440Y1 (en) | 1967-09-22 | 1971-09-01 | ||
US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
JPS5856332A (en) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | Correction of defect in mask and device thereof |
US4859908A (en) * | 1986-09-24 | 1989-08-22 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus for large area ion irradiation |
JPH01132033A (en) | 1987-11-17 | 1989-05-24 | Hitachi Ltd | Ion source |
US5036252A (en) | 1988-04-26 | 1991-07-30 | Hauzer Holding Bv | Radio frequency ion beam source |
JPH071686B2 (en) * | 1988-09-22 | 1995-01-11 | 株式会社日立製作所 | Ion micro analyzer |
DE4018954A1 (en) * | 1989-06-15 | 1991-01-03 | Mitsubishi Electric Corp | DRYING MACHINE |
JPH03272549A (en) * | 1990-03-20 | 1991-12-04 | Shimadzu Corp | High frequency ion source |
US5089441A (en) * | 1990-04-16 | 1992-02-18 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafers |
JP3066554B2 (en) * | 1992-12-02 | 2000-07-17 | 日新電機株式会社 | Low energy ion beam generator |
JPH06176725A (en) | 1992-12-04 | 1994-06-24 | Nissin Electric Co Ltd | Ion source |
US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
JPH07312201A (en) | 1994-05-17 | 1995-11-28 | Nissin Electric Co Ltd | Ion beam operation method in ion doping device |
JPH07335163A (en) | 1994-06-13 | 1995-12-22 | Nissin Electric Co Ltd | Method and device for generation of ion beam |
JP3272549B2 (en) | 1994-09-29 | 2002-04-08 | 三菱重工業株式会社 | Moisture control equipment for paper mills |
US5614711A (en) * | 1995-05-04 | 1997-03-25 | Indiana University Foundation | Time-of-flight mass spectrometer |
US5573595A (en) | 1995-09-29 | 1996-11-12 | Lam Research Corporation | Methods and apparatus for generating plasma |
US6017221A (en) * | 1995-12-04 | 2000-01-25 | Flamm; Daniel L. | Process depending on plasma discharges sustained by inductive coupling |
US5965034A (en) * | 1995-12-04 | 1999-10-12 | Mc Electronics Co., Ltd. | High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced |
US5686796A (en) * | 1995-12-20 | 1997-11-11 | International Business Machines Corporation | Ion implantation helicon plasma source with magnetic dipoles |
TW403959B (en) * | 1996-11-27 | 2000-09-01 | Hitachi Ltd | Plasma treatment device |
GB9714142D0 (en) * | 1997-07-05 | 1997-09-10 | Surface Tech Sys Ltd | An arrangement for the feeding of RF power to one or more antennae |
JPH11162697A (en) * | 1997-11-28 | 1999-06-18 | Mc Electronics Kk | Spiral resonance device for plasma generation |
US5868651A (en) * | 1997-12-22 | 1999-02-09 | Washington; Leonard A. | Multi-function exercise device |
US5945677A (en) * | 1998-04-10 | 1999-08-31 | The Regents Of The University Of California | Focused ion beam system |
JP4067640B2 (en) * | 1998-04-28 | 2008-03-26 | 株式会社ルネサステクノロジ | Charged particle source, charged particle beam apparatus, defect analysis method, and semiconductor device manufacturing method |
JP2000133497A (en) * | 1998-10-29 | 2000-05-12 | Toshiba Corp | High-frequency discharge type plasma generation device |
WO2001082355A2 (en) * | 2000-04-25 | 2001-11-01 | Tokyo Electron Limited | Method and apparatus for plasma cleaning of workpieces |
US6517469B1 (en) * | 2000-11-14 | 2003-02-11 | Mix Promotion, Inc. | Exercising device for conditioning the body |
KR100444189B1 (en) * | 2001-03-19 | 2004-08-18 | 주성엔지니어링(주) | Impedance matching circuit for inductive coupled plasma source |
US6768120B2 (en) * | 2001-08-31 | 2004-07-27 | The Regents Of The University Of California | Focused electron and ion beam systems |
US6752747B2 (en) * | 2002-01-17 | 2004-06-22 | Ya-Chu Hsiao | Multi-directional swivel body builder |
US7298091B2 (en) * | 2002-02-01 | 2007-11-20 | The Regents Of The University Of California | Matching network for RF plasma source |
US7084407B2 (en) * | 2002-02-13 | 2006-08-01 | The Regents Of The University Of California | Ion beam extractor with counterbore |
US6975072B2 (en) * | 2002-05-22 | 2005-12-13 | The Regents Of The University Of California | Ion source with external RF antenna |
EP1585999A4 (en) * | 2002-08-02 | 2008-09-17 | E A Fischione Instr Inc | Methods and apparatus for preparing specimens for microscopy |
US20050051273A1 (en) * | 2003-09-04 | 2005-03-10 | Kenji Maeda | Plasma processing apparatus |
JP4913599B2 (en) | 2003-10-17 | 2012-04-11 | エフ・イ−・アイ・カンパニー | Charged particle extraction device and design method thereof |
US7791047B2 (en) * | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
US7241361B2 (en) * | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
JP5371142B2 (en) | 2006-07-14 | 2013-12-18 | エフ・イ−・アイ・カンパニー | Multi-source plasma focused ion beam system |
JP4625440B2 (en) | 2006-11-30 | 2011-02-02 | 和正 山本 | Ring and hanging tool provided with the same |
-
2004
- 2004-11-13 US US10/988,745 patent/US7241361B2/en active Active
-
2005
- 2005-02-18 JP JP2006554300A patent/JP5172154B2/en active Active
- 2005-02-18 WO PCT/US2005/005643 patent/WO2005081940A2/en not_active Application Discontinuation
- 2005-02-18 EP EP05713954A patent/EP1725697A4/en not_active Ceased
-
2007
- 2007-07-02 US US11/825,136 patent/US7670455B2/en active Active
-
2010
- 2010-02-11 US US12/704,123 patent/US8168957B2/en active Active
-
2012
- 2012-04-02 US US13/437,518 patent/US8829468B2/en active Active
-
2014
- 2014-09-09 US US14/481,642 patent/US9640367B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7176469B2 (en) * | 2002-05-22 | 2007-02-13 | The Regents Of The University Of California | Negative ion source with external RF antenna |
Non-Patent Citations (1)
Title |
---|
See also references of EP1725697A4 * |
Also Published As
Publication number | Publication date |
---|---|
US20100294648A1 (en) | 2010-11-25 |
US9640367B2 (en) | 2017-05-02 |
US7241361B2 (en) | 2007-07-10 |
US8168957B2 (en) | 2012-05-01 |
US20150130348A1 (en) | 2015-05-14 |
US20080017319A1 (en) | 2008-01-24 |
EP1725697A4 (en) | 2009-11-25 |
WO2005081940A2 (en) | 2005-09-09 |
US7670455B2 (en) | 2010-03-02 |
JP5172154B2 (en) | 2013-03-27 |
US20120319000A1 (en) | 2012-12-20 |
US20050183667A1 (en) | 2005-08-25 |
JP2007529091A (en) | 2007-10-18 |
US8829468B2 (en) | 2014-09-09 |
EP1725697A2 (en) | 2006-11-29 |
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