WO2005086229A1 - 光透過用窓部材、光透過用窓部材を備えた半導体パッケージおよび光透過用窓部材の製造方法 - Google Patents
光透過用窓部材、光透過用窓部材を備えた半導体パッケージおよび光透過用窓部材の製造方法 Download PDFInfo
- Publication number
- WO2005086229A1 WO2005086229A1 PCT/JP2005/003457 JP2005003457W WO2005086229A1 WO 2005086229 A1 WO2005086229 A1 WO 2005086229A1 JP 2005003457 W JP2005003457 W JP 2005003457W WO 2005086229 A1 WO2005086229 A1 WO 2005086229A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- frame
- glass member
- light
- opening
- transmitting window
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims description 26
- 239000011521 glass Substances 0.000 claims abstract description 267
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 239000000853 adhesive Substances 0.000 claims abstract description 12
- 230000001070 adhesive effect Effects 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims description 30
- 238000003466 welding Methods 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 229910000531 Co alloy Inorganic materials 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 5
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005304 joining Methods 0.000 description 63
- 229910000833 kovar Inorganic materials 0.000 description 25
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 18
- 238000007747 plating Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
Definitions
- Light transmitting window member semiconductor package having light transmitting window member, and method of manufacturing light transmitting window member
- the present invention relates to a light transmitting window member, a semiconductor package having the light transmitting window member, and a method of manufacturing the light transmitting window member, and more particularly, to a light transmitting window including a glass member capable of transmitting light.
- the present invention relates to a member, a semiconductor package provided with a light transmitting window member, and a method of manufacturing the light transmitting window member.
- various light-transmitting window members including a glass member capable of transmitting light used for a semiconductor package have been known.
- a light transmitting window member is disclosed, for example, in Japanese Patent Application Laid-Open No. Hei 9-148469.
- an opening (opening area) for defining a light passage area is formed in a glass member (glass window) using a metal plating or the like.
- a light transmitting window member having a structure in which a gold-plated portion of a glass member provided with is bonded to a metal frame provided with an opening for transmitting light via a solder layer.
- FIG. 15 to FIG. 18 are views showing the overall configuration of a conventional light transmitting window member having such a structure.
- FIG. 19 and FIG. 20 are perspective views for explaining a manufacturing process of the conventional light transmitting window member shown in FIG.
- FIG. 21 is a perspective view showing an overall configuration of a semiconductor package including the light transmitting window member shown in FIG.
- FIG. 22 is a perspective view for explaining a manufacturing process of the semiconductor package provided with the light transmitting window member shown in FIG.
- a conventional light transmitting window member 40 is made of glass capable of transmitting light.
- a member 21, a metal frame 22, a gold plating layer 23, and a chromium deposition layer 24 are provided.
- the glass member 21 is fitted into the opening 22a of the frame 22. In this state, the outer surface of the glass member 21 and the inner surface of the opening 22a of the frame 22 are joined by glass welding.
- the frame 22 includes an outer peripheral portion having a small thickness (about 0.2 mm) and an inner side portion located inside the outer peripheral portion and having a thickness larger than the outer peripheral portion (about 3 mm). I have.
- the thickness of the inner portion of the frame 22 allows the joining length (joining allowance) of the joining region with the glass member 21 to be increased to some extent, and the glass member after joining the glass member 21 and the frame 22.
- the thickness of the glass member 21 is set to be slightly smaller than the thickness of the glass member 21 so that the surface of the glass member 21 can be easily polished by slightly projecting the surface of the frame 22 from the surface of the frame 22.
- the gold plating layer 23 is formed so as to cover the outer surface of the frame 22.
- the chromium deposition layer 24 is formed so as to extend over a part of the gold plating layer 23 on the lower surface of the frame 22 and a part of the lower surface of the glass member 21.
- a conventional light transmitting window member 40 is made of, for example, a metal member in which a DMD element (Digital Micromirror Device) (not shown) as a display element used in a projector is housed. It is joined to the housing 50.
- the light transmitting window member 40 and the housing 50 constitute a conventional semiconductor package 60.
- a method of manufacturing the conventional light transmitting window member 40 will be described.
- a metal frame 22 having an outer peripheral portion having a small thickness and including an inner portion having a large thickness having an opening 22a is formed. That is, the outer peripheral portion of the frame 22 having a small thickness is formed by cutting, and the opening 22a of the frame 22 is formed by pressing. Then, the glass member 21 is inserted into the opening 22a of the frame 22. Thereafter, the entirety of the glass member 21 and the frame 22 is heated to a temperature equal to or higher than the softening point of the glass member 21 (about 800 ° C.), so that the outer surface of the glass member 21 is formed inside the opening 22a of the frame 22.
- a gold plating layer 23 is formed using an electrolytic plating method so as to cover the entire outer surface of the frame 22.
- the glass member 21 is softened, the flatness and parallelism of the glass member 21 are reduced.
- the upper and lower surfaces of the glass member 21 are polished to improve the flatness and parallelism of the surface of the glass member 21. After polishing the upper and lower surfaces of the glass member 21 in this way, as shown in FIG.
- the chromium vapor-deposited layer 24 is formed so as to form an opening region 24a for defining a light incident region.
- the conventional light transmitting window member 40 shown in FIG. 15 is formed.
- the light transmitting window member 40 formed as described above has the lower surface of the thin outer peripheral portion of the frame 22 attached to the upper surface 50a of the outer peripheral portion of the housing 50 and the housing 50. Are bonded so as to be sealed. Thus, a semiconductor package 60 including the conventional light transmission window member 40 is formed.
- the outer surface of the glass member 21 and the inner surface of the opening 22a of the frame 22 are welded while pressing.
- the thickness of the inner portion of the frame 22 should be made as large as the thickness of the glass member 21. There is a need. For this reason, as compared with the case where the thickness of the frame 22 is small, the material cost of the frame 22 is increased, and it is difficult to simplify the structure of the light transmission window member 40 due to the large thickness of the frame 22. There is a problem that becomes.
- the conventional light transmitting window member 40 it is necessary to provide an opening 22a in the frame 22 and to provide an opening area 24a on the lower surface of the glass member 21 for defining a light transmitting area. Therefore, it was difficult to simplify the structure and the manufacturing process.
- the present invention has been made to solve the above-described problems, and one object of the present invention is to simplify the structure and to simplify the manufacturing process.
- Light-transmitting window member, semiconductor package having light-transmitting window member, and light transmission It is an object of the present invention to provide a method for manufacturing a window member.
- a light transmission window member is a light transmission window member used for a semiconductor package, which defines a light passage area.
- a metal flat plate frame having an opening, and a glass member capable of transmitting light which is bonded to the upper surface of the flat plate frame having the opening without an adhesive material so as to cover the opening.
- the opening is formed on the upper surface of the metal plate-shaped frame having the opening for defining the light passage area.
- a light-shielding film such as chrome, which is necessary for providing an opening area in the glass member, is deposited. The step of performing is unnecessary. As a result, the manufacturing process of the light transmitting window member can be simplified.
- the metal plate-shaped frame having an opening that defines a light transmission region and the glass member are in contact with each other via the A1 layer.
- A1 ⁇ -alumina
- the glass member is anodically bonded to an upper surface of a flat frame having an opening that defines a light transmitting region.
- the bonding temperature between the upper surface of the flat frame and the glass member can be made lower than the softening point of the glass member.
- the softening of the surface of the glass member is suppressed by the temperature at the time of joining with the glass member.
- the flatness and parallelism of the glass member can be prevented from lowering, so that it is not necessary to polish the surface of the glass member after joining the upper surface of the flat frame and the glass member.
- the polishing can be performed in a single state of the glass member before joining the glass member and the frame, which is compared with the case where the glass member joined to the frame is polished after the joining between the glass member and the frame.
- polishing of the glass member becomes easier. Thereby, the polishing process of the glass member can be simplified.
- the glass member is a flat frame having an opening that defines a light transmitting region at a temperature equal to or lower than the softening point of the glass member. It is joined to the upper surface.
- the surface of the glass member is easily prevented from being softened by the temperature at the time of joining the flat frame and the glass member.
- the polishing can be performed in a single state of the glass member before the joining of the glass member and the frame, which is compared with a case where the glass member joined to the frame is polished after the joining of the glass member and the frame.
- the polishing of the glass member becomes easier. Thereby, the polishing process of the glass member can be simplified.
- the upper surface of the flat plate-shaped frame having an opening that defines the light transmitting region, on the side to which the glass member is joined is mirror-finished.
- the housing of the semiconductor package the housing can be held in a sealed state by the light transmitting window member.
- the metal frame having an opening that defines a light transmitting region has a thermal expansion coefficient close to a thermal expansion coefficient of the glass member.
- the frame having an opening that defines a light-transmitting region
- Iron 'nickel' cobalt alloy power also becomes.
- the thermal expansion coefficient of the frame can be easily determined by the thermal expansion coefficient of the glass member. It can be close to the coefficient.
- the glass member contains an alkali ion.
- the lower surface of the metal frame is joined to the metal housing of the semiconductor package so as to hermetically close the housing.
- the housing can be easily formed by the light transmitting window member formed by joining the metal frame having the opening for defining the light passage area and the glass member. Can be sealed.
- the lower surface of the metal frame is joined to the metal housing of the semiconductor package by resistance welding.
- the lower surface of the metal frame and the housing can be joined by heating only the joining portion.
- the temperature of the glass member at the time of joining the metal frame and the housing can be made lower than the softening point of the glass member. Accordingly, softening of the surface of the glass member is suppressed.
- the flatness and parallelism of the glass member can be suppressed from being reduced, it is possible to suppress the light transmission characteristics of the glass member from being reduced.
- the temperature of the semiconductor element housed in the housing at the time of joining the metal frame and the housing can be suppressed from rising, the temperature at the time of joining the metal frame and the housing can be suppressed.
- Semiconductor element housed in housing is destroyed due to Can be prevented.
- the semiconductor package according to the second aspect of the present invention includes a metal flat plate frame having an opening for defining a light passage area, and an opening formed on an upper surface of the flat frame having the opening.
- a light-transmitting window member including a glass member capable of transmitting light, which is bonded without interposing an adhesive, so as to cover the portion.
- the opening is covered on the upper surface of the metal plate-shaped frame having the opening for defining the light passage area.
- the glass member is joined to the inner surface of the opening of the frame by joining the glass member capable of transmitting light without using an adhesive, it is not necessary to increase the thickness of the frame, and It is not necessary to provide an opening area for defining a light incident area on the glass member side, in addition to the above-mentioned opening. Thereby, the thickness of the frame can be reduced, and the structure of the light transmitting window member can be simplified.
- a light-shielding film such as chrome, which is necessary for providing an opening area in the glass member, is deposited. The step of performing is unnecessary. As a result, the manufacturing process of the light transmitting window member can be simplified.
- the metal plate-shaped frame having an opening for defining a light transmission region and the glass member are joined via an A1 layer.
- A1 layer a portion of A1 ( ⁇ -alumina) is extended in a comb shape inside the interface of the glass member. Therefore, the bonding strength between the A1 layer and the glass member can be increased. Thereby, the joining strength between the metal frame and the glass member can be increased.
- the glass member is anodically bonded to the upper surface of the flat frame.
- the bonding temperature between the upper surface of the flat frame and the glass member can be set lower than the softening point of the glass member, so that the bonding time between the flat frame and the glass member can be reduced. Due to the temperature, softening of the surface of the glass member is suppressed. As a result, the flatness and parallelism of the glass member are reduced. Since the lowering can be suppressed, there is no need to polish the surface of the glass member after joining the upper surface of the flat frame and the glass member.
- the glass member can be polished in a single state before the glass member and the frame are joined, compared to the case where the glass member joined to the frame is polished after the glass member is joined to the frame. Polishing of the glass member becomes easier. Thereby, the polishing process of the glass member can be simplified.
- the glass member is bonded to an upper surface of a flat frame having an opening that defines a light transmission region at a temperature equal to or lower than the softening point of the glass member.
- the surface of the glass member is easily prevented from being softened by the temperature at the time of joining the flat frame and the glass member.
- the polishing can be performed in a single state of the glass member before the joining of the glass member and the frame, which is compared with a case where the glass member joined to the frame is polished after the joining of the glass member and the frame.
- the polishing of the glass member becomes easier. Thereby, the polishing process of the glass member can be simplified.
- the semiconductor package according to the second aspect preferably further includes a housing that is joined to the lower surface of the metal frame so as to be hermetically sealed by the lower surface of the metal frame, and that houses the semiconductor element.
- the housing can be easily formed by the light transmitting window member formed by joining the glass member and the metal frame having the opening for defining the light passage area. Can be sealed.
- the metal frame and the housing have the same material strength.
- the coefficient of thermal expansion of the metal frame and the coefficient of thermal expansion of the housing can be made the same, so that if the temperature of the metal frame and the nozzle is lowered to room temperature after joining.
- the metal frame and the housing are made of an iron-nickel-cobalt alloy.
- the thermal expansion coefficient of the frame and the housing is determined by the glass member.
- the thermal expansion coefficient of the metal frame and the difference between the thermal expansion coefficient of the housing and the thermal expansion coefficient of the glass member are reduced. It is possible to suppress occurrence of warpage or distortion in the member.
- the lower surface of the metal frame is joined to the metal housing of the semiconductor package by resistance welding.
- the lower surface of the metal frame and the nozzle can be joined by heating only the joining portion.
- the temperature of the glass member at the time of joining the metal frame and the housing can be made lower than the softening point of the glass member. Softening of the surface of the member is suppressed.
- the flatness and the parallelism of the glass member can be prevented from decreasing, so that the light transmission characteristics of the glass member can be suppressed from decreasing.
- the temperature of the semiconductor element housed in the housing at the time of joining the metal frame and the housing can be suppressed from rising, the temperature rise at the time of joining the metal frame and the housing can be suppressed.
- the semiconductor element housed in the housing can be prevented from being broken.
- a method for manufacturing a light transmitting window member according to a third aspect of the present invention is a method for manufacturing a light transmitting window member used for a semiconductor package, wherein an opening for defining a light passage area is provided.
- the bonding temperature between the upper surface of the flat frame and the glass member can be lower than the softening point of the glass member.
- the softening of the surface of the glass member is suppressed by the temperature at the time of joining the glass member and the glass member.
- the flatness and parallelism of the glass member can be prevented from lowering, so that it is not necessary to polish the surface of the glass member after joining the upper surface of the flat frame to the glass member.
- the glass member can be polished in a single state before the glass member and the frame are joined, so that the glass member joined to the frame is polished after the glass member is joined to the frame.
- the polishing of the glass member becomes easier.
- the polishing process of the glass member can be simplified.
- a glass member capable of transmitting light is joined to the upper surface of a metal plate-shaped frame having an opening for defining a light passage area without using an adhesive material, thereby opening the frame. Unlike the case where a glass member is joined to the inner surface of the part, it is not necessary to increase the thickness of the frame, and an opening area for defining the light incident area is provided on the glass member side separately from the opening of the frame No need.
- the thickness of the frame can be reduced, and the structure of the light transmitting window member can be simplified.
- a light-shielding film such as chrome, which is necessary for providing an opening area in the glass member, is deposited. The step of performing is unnecessary. As a result, the manufacturing process of the light transmitting window member can be simplified.
- the step of anodic bonding includes: a metal flat plate-shaped frame having an opening that defines a light transmission region; A step of anodic bonding with a glass member via an A1 layer is included.
- a step of anodic bonding with a glass member via an A1 layer is included.
- the anodic bonding step includes a step of anodic bonding the frame and the glass member via the A1 layer.
- the anodic bonding step is performed before the anodic bonding step.
- the method further comprises the step of standing and forming an A1 layer on a bonding surface of the frame to the glass member. With this configuration, the frame and the glass member can be easily anodically bonded via the A1 layer.
- the method for manufacturing a light transmitting window member according to the third aspect further includes a step of polishing a bonding surface of the glass member to the frame prior to the step of anode bonding.
- the glass member can be easily polished in a single state.
- FIG. 1 is a perspective view showing an overall configuration of a light transmitting window member according to a first embodiment of the present invention.
- FIG. 2 is a plan view showing the overall configuration of the light transmitting window member according to the first embodiment shown in FIG. 1.
- FIG. 3 is a sectional view taken along the line 100-100 in FIG. 2.
- FIG. 4 is a bottom view showing the entire configuration of the light transmitting window member according to the first embodiment shown in FIG. 1.
- FIG. 5 is a perspective view for explaining a manufacturing process of the light transmitting window member according to the first embodiment shown in FIG. 1.
- FIG. 6 is a perspective view showing the overall configuration of the semiconductor package according to the first embodiment of the present invention.
- FIG. 7 is a perspective view for explaining a manufacturing process of the semiconductor package according to the first embodiment shown in FIG. 6.
- FIG. 8 is a perspective view showing an overall configuration of a light transmitting window member according to a second embodiment of the present invention.
- FIG. 9 is a plan view showing the overall configuration of the light transmitting window member according to the second embodiment shown in FIG. 8.
- FIG. 10 is a sectional view taken along the line 200—200 in FIG.
- FIG. 11 is a bottom view showing the entire configuration of the light transmitting window member according to the second embodiment shown in FIG. 8.
- FIG. 12 is a perspective view for explaining a manufacturing process of the light transmitting window member according to the second embodiment shown in FIG. 8.
- FIG. 13 is a perspective view showing an overall configuration of a semiconductor package according to a second embodiment of the present invention.
- FIG. 14 is a perspective view for explaining a light transmission window member according to a modification of the second embodiment of the present invention.
- FIG. 15 is a perspective view showing the overall configuration of a conventional light transmitting window member.
- FIG. 16 is a plan view showing the entire configuration of the conventional light transmitting window member shown in FIG.
- FIG. 17 is a sectional view taken along the line 300—300 in FIG.
- FIG. 18 is a bottom view showing the entire configuration of the conventional light transmitting window member shown in FIG.
- FIG. 19 is a perspective view for explaining a manufacturing process of the conventional light transmitting window member shown in FIG.
- FIG. 20 is a perspective view from the lower surface direction for explaining a manufacturing process of the conventional light transmitting window member shown in FIG. 15.
- FIG. 21 is a perspective view showing the entire configuration of a conventional semiconductor package.
- FIG. 22 is a perspective view for explaining a manufacturing process of the conventional semiconductor package shown in FIG. 21.
- FIG. 1 to FIG. 4 are views showing the entire configuration of the light transmitting window member according to the first embodiment of the present invention.
- FIG. 5 is a perspective view for explaining a manufacturing process of the light transmitting window member according to the first embodiment of the present invention.
- FIG. 6 is a perspective view showing an overall configuration of a semiconductor package having the light transmitting window member shown in FIG. 1
- FIG. 7 is a view for explaining a manufacturing process of the semiconductor package shown in FIG. It is a perspective view.
- the light transmission window member 10 transmits light as shown in FIGS. It includes a permeable glass member 1, a frame 2 made of Kovar (iron 'nickel' cobalt alloy (for example, 29Ni—16Co-Fe)), and a gold plating layer 3!
- the glass member 1 has an outer peripheral portion smaller than the outer peripheral portion of the frame 2 and has a thickness of about 3 mm or more. Further, the glass member 1 contains alkali ions such as Na. The glass member 1 has a thermal expansion coefficient of about 5. 15 X 10- 6 ZK- about 5. 45 ⁇ 10- 6 ⁇ . The glass member 1 has a flatness of about 2 m or less and a parallelism of about 10 m or less, and the lower surface (joining surface) of the glass member 1 has a surface roughness (about 0.1 ⁇ m or less). R max). The lower surface of the glass member 1 is anodically bonded to the upper surface of the flat frame 2 in the bonding region 4 without using an adhesive.
- the frame 2 is formed in a flat plate shape having a small thickness of about 0.2 mm, and has an opening 2a at the center for defining a light passage area. Further, Kovar (29Ni- 16Co- Fe) made of frame 2 has a thermal expansion coefficient of about 4. 6 X 10- 6 ZK- about 5. 2 X 10- 6 ⁇ . In other words, frame over arm 2 has a thermal expansion coefficient near the thermal expansion coefficient of the glass member 1 (about 5. 15 X 10- 6 ⁇ - about 5. 45 X 10- 6 ⁇ ) (approximately 4. 6 X 10- 6 Zetakappa- having about 5. 2 X 10- 6 ⁇ ).
- the upper surface (joining surface) of Frame 2 is mirror-finished.
- the gold plating layer 3 is formed so as to cover all regions of the frame 2 except for the bonding region 4.
- the gold plating layer 3 is provided to prevent corrosion of the surface of the frame 2.
- the light transmission window member 10 is, for example, a Kovar (for example, 29 ⁇ -16 Co.) housing a DMD element (not shown) as a display element used in a projector. It is connected to a housing 20 made of Fe) by resistance welding so as to seal the housing 20.
- the light transmitting window member 10 and the housing 20 constitute a semiconductor package 30 for the DMD element.
- the method for manufacturing the light transmitting window member 10 and the method for manufacturing the semiconductor package 30 including the light transmitting window member 10 according to the first embodiment will be described. explain about.
- the upper surface and the lower surface (joining surface) of the glass member 1 capable of transmitting light are polished to form a bonding surface (lower surface) having a surface roughness (Rmax) of about 0.1 ⁇ m or less.
- a glass member 1 having a flatness of about 2 ⁇ m or less and a parallelism of about 10 ⁇ m or less is formed.
- the upper surface (joining surface) of the frame 2 is mirror-finished.
- the lower surface of the glass member 1 is anodically bonded to the upper surface of the frame 2 so as to cover the opening 2a of the frame 2 below the softening point of the glass member 1.
- the anodic bonding conditions in this case are as follows: temperature: about 400 ° C to about 500 ° C, and applied voltage: about 500 V or more. Since the glass member 1 contains alkali ions such as Na, it is possible to easily anodically bond the glass member 1 and the frame 2 made of Kovar.
- a gold plating layer 3 is formed using an electrolytic plating method so as to cover the entire outer surface of the frame 2.
- the light transmission window member 10 according to the first embodiment shown in FIG. 1 is formed.
- the lower surface of the frame 2 of the light transmitting window member 10 formed as described above is resistance-welded to the upper surface 20a of the outer periphery of the nosing 20 in which a DMD element (not shown) is stored. No, join the housing 20 so as to seal it.
- the welding conditions for resistance welding are as follows: current: about 100 OA, conduction time: about 5 msec or less, and pressure: about lkg or more.
- a semiconductor package 30 for the DMD element is formed, as shown in FIG.
- the glass member 1 capable of transmitting light is provided on the upper surface of the flat plate frame 2 made of Kovar having the opening 2a for defining the light passage area.
- the glass member 21 is bonded to the inner surface of the opening 22a of the frame 22 shown in FIG. 17 by performing anodic bonding without using an adhesive, it is necessary to increase the thickness of the frame 2.
- the glass member 1 is anodically bonded to the upper surface of the flat frame 2 to lower the bonding temperature between the upper surface of the flat frame 2 and the glass member 1.
- the flatness and parallelism of the glass member 1 can be prevented from lowering, so that the surface of the glass member 1 is polished after the upper surface of the flat frame 2 is joined to the glass member 1. There is no need to do this.
- the glass member 1 can be polished in a single state before the glass member 1 and the frame 2 are joined, the glass member joined to the frame 2 after the glass member 1 and the frame 2 are joined.
- the polishing of the glass member 1 is easier than in the case of polishing 1. Thereby, the polishing process of the glass member 1 can be simplified.
- the lower surface (joining surface) of the glass member 1 is formed to have a surface roughness (Rmax) of about 0.1 ⁇ m or less, and the upper surface of the flat frame 2 is formed. Since the (joining surface) is mirror-finished, it is possible to suppress the occurrence of a gap in the joining surface between the upper surface of the flat frame 2 and the lower surface of the glass member 1. It is possible to suppress air from passing through the joint surface between the glass member 1 and the lower surface.
- the housing 20 is sealed by the light transmitting window member 10. Can be kept in a state.
- the Kovar frame 2 is configured to have a thermal expansion coefficient near the thermal expansion coefficient of the glass member 1, so that the Kovar frame 2 and the Kovar frame 2 are joined after joining.
- the temperature of the glass member 1 drops to room temperature, it is necessary to suppress the occurrence of warpage or distortion in the glass member due to the difference between the thermal expansion coefficient of the Kovar frame 2 and the thermal expansion coefficient of the glass member 1. Can be.
- the lower surface of the Kovar frame 2 is joined to the upper surface 20a of the outer peripheral portion of the Kovar housing 20 in which a DMD element (not shown) is accommodated by resistance welding. Therefore, in resistance welding, a current is instantaneously applied to the welded part and welding is performed by the resistance heating. it can. As a result, the temperature of the glass member 1 at the time of joining the Kovar frame 2 and the housing 20 can be lower than the softening point of the glass member 1, so that the joining of the Kovar frame 2 and the housing 20 can be performed. Depending on the temperature at the time In addition, softening of the surface of the glass member 1 is suppressed.
- the flatness and the parallelism of the glass member 1 can be suppressed from being reduced, so that the light transmission characteristics of the glass member 1 can be prevented from being reduced. Further, since the temperature of a DMD element (not shown) stored in the housing 20 at the time of joining the Kovar frame 2 and the housing 20 can be suppressed, the Kovar frame 2 and the housing 20 are connected to each other. It is possible to prevent a DMD element (not shown) housed in the housing 20 from being destroyed due to a rise in temperature at the time of joining.
- FIGS. 8 to 11 are views showing the entire configuration of a light transmitting window member according to a second embodiment of the present invention.
- FIG. 12 is a perspective view for explaining a manufacturing process of the light transmitting window member according to the second embodiment of the present invention.
- FIG. 13 is a perspective view showing an overall configuration of a semiconductor knockout provided with the light transmitting window member shown in FIG.
- the glass member 1 and the frame 2 made of Kovar are anodic-bonded via the A1 layer 5.
- the lower surface of the glass member 1 is flat in the bonding region 4 (see FIGS. 10 and 11).
- the A1 layer 5 has a thickness of about 0.05 / zm to about 100 / zm. If the thickness of the A1 layer 5 is smaller than about 0.05 / zm, A1 may diffuse into the frame 2 where the Kovar force is also high, and the A1 layer 5 may disappear.
- the thickness of the A1 layer 5 is larger than about 100 m, the tensile stress remains in the glass member 1 due to the difference in the thermal expansion coefficient between the A1 layer 5 and the glass member 1, and the glass portion Material 1 may be damaged.
- the thickness of the A1 layer 5 is preferably set to about 0.05 ⁇ m to about 100 ⁇ m. Further, the A1 layer 5 is formed only in the joint region 4 of the frame 2. As shown in FIG. 13, the light transmitting window member 10a and the housing 20 constitute a semiconductor package 30a for a DMD element.
- the other structure of the second embodiment is the same as that of the first embodiment.
- a method for manufacturing the light transmitting window member 10a according to the second embodiment will be described with reference to FIGS. 8 and 12.
- the upper surface and the lower surface (joining surface) of the glass member 1 capable of transmitting light are polished to form a joining surface (Rmax) having a surface roughness of about 0.1 ⁇ m or less.
- Rmax joining surface
- a glass member 1 having a lower surface) and a flatness of about 2 ⁇ m or less and a parallelism of about 10 ⁇ m or less is formed.
- an opening 2a for defining a light passage area is formed in the flat frame 2 by press working, and the upper surface (joining surface) of the frame 2 is mirror-finished. Then, the upper surface of the frame 2 is cleaned using pure water or alcohol. Thereafter, A1 is vapor-deposited only on the joint region 4 of the frame 2 using a mask, thereby forming an A1 layer 5 having a thickness of about 0.05 m to about 100 m. Since the upper surface of the frame 2 is mirror-finished, the upper surface of the A1 layer 5 deposited on the upper surface of the frame 2 is also mirror-finished. Then, the frame 2 and the A1 layer 5 are subjected to diffusion annealing at a temperature of about 400 ° C. to about 500 ° C.
- the lower surface of the glass member 1 is anodically bonded to the upper surface of the A1 layer 5 so as to cover the opening 2a of the frame 2 below the softening point of the glass member 1.
- the anodic bonding conditions in this case are as follows: temperature: about 400 ° C to about 500 ° C, and applied voltage: about 500V or more.
- a part ( ⁇ -alumina) of the A1 layer 5 is formed to extend in a comb shape inside the interface of the glass member 1. Since the glass member 1 contains alkali ions such as Na, it is possible to easily anodically join the glass member 1 and the frame 2 made of Kovar.
- a gold plating layer 3 is formed using an electrolytic plating method so as to cover the entire outer surface of the frame 2.
- the light transmitting window member 10a according to the second embodiment shown in FIG. 8 is formed.
- the method for manufacturing the semiconductor package 30a (see FIG. 13) according to the second embodiment is the same as the method for manufacturing the semiconductor package 30 according to the first embodiment.
- the flat plate frame 2 made of Kovar and the glass member 1 are anodically bonded via the A1 layer 5 so that a part of the A1 layer 5 ( ⁇ (Alumina) can be formed in the interface of the glass member 1 so as to extend in a comb shape, so that the bonding strength between the A1 layer 5 and the glass member 1 can be increased.
- the joining strength between the Kovar frame 2 and the glass member 1 can be increased.
- the force described for the light transmitting window member used in the semiconductor package for the DMD element is not limited thereto, and the present invention is not limited to this. It can also be applied to a light transmission window member used in a semiconductor package for semiconductors.
- the present invention is not limited to this, and the glass member and the frame may be bonded to each other with an adhesive.
- a bonding method other than the anodic bonding may be used as long as the bonding can be performed without any intervening steps.
- As a bonding method other than the anodic bonding in this case it is preferable to use a bonding method capable of bonding the glass member and the frame at a temperature equal to or lower than the softening point of the glass without using an adhesive.
- the frame is formed of Kovar (iron 'nickel' cobalt alloy), but the present invention is not limited to this, and the frame is formed of another metal. May be formed.
- the frame is preferably formed of a metal having a coefficient of thermal expansion near the coefficient of thermal expansion of the glass member. Such metals, for example, about 4. 5 X 10- 6 ZK- about 5. Iron, such 42Ni- Fe having a thermal expansion coefficient of 3 X 10- 6 ⁇ • nickel alloys are contemplated.
- the force showing the example of anodic bonding the frame and the glass member via the A1 layer is not limited to this, and the present invention is not limited to this.
- Anodic bonding may be performed via a metal layer.
- the frame and the glass member are connected via the A1 layer.
- the frame and the glass member may be anodically bonded via the A1 layer without diffusion annealing the frame and the glass member.
- the frame and the glass member can be subjected to diffusion annealing while performing anodic bonding.
- A1 is vapor-deposited on the joining region of the frame and the frame and the glass member are anodically joined via the A1 layer.
- the present invention is not limited to this.
- A1 may be vapor-deposited on the lower surface of the glass member 1, and the frame 2 and the glass member 1 may be anodically bonded via the A1 layer 5a. .
- A1 is vapor-deposited only on the joint region of the frame using a mask.
- the present invention is not limited to this, and A1 is vapor-deposited on the entire surface of the frame without using a mask. May be.
- the A1 layer may be formed by a method other than a vapor deposition method such as a plating clad. That is, the cladding material in which the A1 layer is joined to the frame made of the Kovar layer may be formed by pressure-welding the Kovar layer serving as the frame and the A1 layer.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006519383A JPWO2005086229A1 (ja) | 2004-03-05 | 2005-03-02 | 光透過用窓部材、光透過用窓部材を備えた半導体パッケージおよび光透過用窓部材の製造方法 |
US10/548,224 US20060131600A1 (en) | 2004-03-05 | 2005-03-02 | Light transmitting window member, semiconductor package provided with light transmitting window member and method for manufacturing light transmitting window member |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-061567 | 2004-03-05 | ||
JP2004061567 | 2004-03-05 |
Publications (1)
Publication Number | Publication Date |
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WO2005086229A1 true WO2005086229A1 (ja) | 2005-09-15 |
Family
ID=34918074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/003457 WO2005086229A1 (ja) | 2004-03-05 | 2005-03-02 | 光透過用窓部材、光透過用窓部材を備えた半導体パッケージおよび光透過用窓部材の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060131600A1 (ja) |
JP (1) | JPWO2005086229A1 (ja) |
WO (1) | WO2005086229A1 (ja) |
Cited By (3)
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JP2007201164A (ja) * | 2006-01-26 | 2007-08-09 | Matsushita Electric Ind Co Ltd | 電子部品用ガラスキャップ成形工法 |
JP2010517064A (ja) * | 2007-01-18 | 2010-05-20 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ | モバイル使用事例において使用されるマイクロマシニング型のかつ光マイクロマシニング型の構成素子に用いられるパッケージ |
JP2013072981A (ja) * | 2011-09-27 | 2013-04-22 | Seiko Epson Corp | 光学フィルターデバイス、光学モジュール、及び電子機器 |
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US7843060B2 (en) * | 2007-06-11 | 2010-11-30 | Cree, Inc. | Droop-free high output light emitting devices and methods of fabricating and operating same |
JP5646981B2 (ja) | 2010-12-21 | 2014-12-24 | 新光電気工業株式会社 | 枠付反射防止ガラス及びその製造方法 |
USD731987S1 (en) * | 2012-12-28 | 2015-06-16 | Nichia Corporation | Light emitting diode |
US9691949B2 (en) | 2014-05-30 | 2017-06-27 | Cree, Inc. | Submount based light emitter components and methods |
USD777122S1 (en) * | 2015-02-27 | 2017-01-24 | Cree, Inc. | LED package |
JP6520299B2 (ja) * | 2015-03-27 | 2019-05-29 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、および電子機器 |
USD761213S1 (en) * | 2015-04-02 | 2016-07-12 | Genesis Photonics Inc. | Light emitting diode module |
USD772181S1 (en) * | 2015-04-02 | 2016-11-22 | Genesis Photonics Inc. | Light emitting diode package substrate |
USD761214S1 (en) * | 2015-04-02 | 2016-07-12 | Genesis Photonics Inc. | Light emitting diode package |
USD783547S1 (en) * | 2015-06-04 | 2017-04-11 | Cree, Inc. | LED package |
JP1566953S (ja) * | 2016-04-28 | 2017-01-16 | ||
USD794582S1 (en) * | 2016-07-29 | 2017-08-15 | Enraytek Optoelectronics Co., Ltd. | LED chip |
USD795822S1 (en) * | 2016-07-29 | 2017-08-29 | Enraytek Optoelectronics Co., Ltd. | LED chip |
TWD188042S (zh) | 2016-09-29 | 2018-01-21 | 新世紀光電股份有限公司 | 發光二極體封裝體之部分 |
TWD186014S (zh) | 2016-09-29 | 2017-10-11 | 新世紀光電股份有限公司 | 發光二極體模組之部分 |
US10957736B2 (en) | 2018-03-12 | 2021-03-23 | Cree, Inc. | Light emitting diode (LED) components and methods |
DE102018110193A1 (de) * | 2018-04-27 | 2019-10-31 | Schott Ag | Beschichtetes optisches Element, Bauelement mit einem beschichteten optischen Element und Verfahren zu dessen Herstellung |
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- 2005-03-02 US US10/548,224 patent/US20060131600A1/en not_active Abandoned
- 2005-03-02 JP JP2006519383A patent/JPWO2005086229A1/ja not_active Abandoned
- 2005-03-02 WO PCT/JP2005/003457 patent/WO2005086229A1/ja active Application Filing
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JPS5565448A (en) * | 1978-11-13 | 1980-05-16 | Hitachi Ltd | Ceramic package for semiconductor device |
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JP2007201164A (ja) * | 2006-01-26 | 2007-08-09 | Matsushita Electric Ind Co Ltd | 電子部品用ガラスキャップ成形工法 |
JP2010517064A (ja) * | 2007-01-18 | 2010-05-20 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ | モバイル使用事例において使用されるマイクロマシニング型のかつ光マイクロマシニング型の構成素子に用いられるパッケージ |
JP2013072981A (ja) * | 2011-09-27 | 2013-04-22 | Seiko Epson Corp | 光学フィルターデバイス、光学モジュール、及び電子機器 |
Also Published As
Publication number | Publication date |
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JPWO2005086229A1 (ja) | 2008-01-24 |
US20060131600A1 (en) | 2006-06-22 |
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