WO2005091799A2 - Optimized trench power mosfet with integrated schottky diode - Google Patents
Optimized trench power mosfet with integrated schottky diode Download PDFInfo
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- WO2005091799A2 WO2005091799A2 PCT/US2005/004122 US2005004122W WO2005091799A2 WO 2005091799 A2 WO2005091799 A2 WO 2005091799A2 US 2005004122 W US2005004122 W US 2005004122W WO 2005091799 A2 WO2005091799 A2 WO 2005091799A2
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- Prior art keywords
- trench
- trenches
- schottky
- field effect
- effect transistor
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- 238000004519 manufacturing process Methods 0.000 claims description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Definitions
- the present invention relates in general to semiconductor power device technology, and in particular to a semiconductor power device with a trenched gate MOSFET and Schottky diode integrated in an optimum manner, and its method of manufacture.
- a second approach has been adding an external Schottky diode in parallel with the MOSFET.
- the superior reverse recovery characteristics of the Schottky contact can improve the overall recovery of the integrated solution.
- the higher junction leakage of the Schottky interface is however a drawback. This has been slightly improved on by co-packaging the discrete Schottky diode with the discrete power MOSFET device.
- a drawback of the use of two discrete devices is the parasitic inductance encountered in connecting the Schottky diode to the MOSFET.
- a third approach is to monolithically integrate the Schottky diode and the power MOSFET.
- This monolithic solution avoids issues with connection parasitics and allows considerably more flexibility in implementing the Schottky structure.
- Korman et al. disclose in U. S. Pat. No. 5,111,253 a planar vertical double diffused MOSFET (DMOS) device with a Schottky barrier structure.
- DMOS vertical double diffused MOSFET
- a similar structure is described by Cogan in U.S. Pat. No. 4,811,065 where again a Schottky diode is monolithically integrated on the same silicon substrate as a lateral DMOS device.
- a monolithically integrated structure combines a field effect transistor and a Schottky structure in an active area of a semiconductor substrate.
- the field effect transistor includes a first trench extending into the substrate and substantially filled by conductive material forming a gate electrode of the field effect transistor.
- a pair of doped source regions are positioned adjacent to and on opposite sides of the trench and inside a doped body region.
- the Schottky structure includes a pair of adjacent trenches extending into the substrate. Each of the pair of adjacent trenches is substantially filled by a conductive material which is separated from trench side-walls by a thin layer of dielectric.
- the Schottky structure further includes a Schottky diode having a barrier layer formed on the surface of the substrate and between the pair of adjacent trenches.
- the Schottky structure consumes 2.5% to 5.0% of the active area, and the field effect transistor consumes the remaining portion of the active area.
- the field effect transistor further includes a metal layer contacting the pair of doped source regions.
- the metal layer and the barrier layer comprise one of either titanium tungsten or titanium nitride.
- FIG. 1 shows a cross-sectional view of a simplified example of an integrated trench MOSFET-Schottky diode structure
- FIG. 2 shows a simplified top view of the embodiment shown in FIG. 1 ;
- FIG. 3 shows an alternate embodiment wherein the polysilicon layers filling the trenches are recessed
- FIGs. 4A and 4B show yet other embodiments wherein each trench structure includes one or more electrodes buried under the gate electrode;
- FIG. 5 shows the simulation circuit for the diode recovery analysis along with an example waveform for modeling the diode recovery
- FIG. 6 shows the MOSFET-Schottky structure used in the simulation modeling
- FIG. 7 shows the circuit and driving waveforms used in simulating the switching losses in a DC-DC converter
- FIG. 8 shows the simulation results for the power loss versus percentage area of the Schottky structure for the converter high-side switch, the low-side switch, as well as their sum;
- FIG. 9 shows the waveforms for the drain leakage and the forward voltage drop versus the percentage of the Schottky structure area
- FIG. 10 shows silicon results along with the simulated values for the reverse recovery charge (Qrr) versus percentage of the Schottky structure area
- FIG. 11 shows the normalized efficiency versus output current for the low-side switch
- FIG. 12 shows the low-side switch turnoff-recovery waveform for 3 different Schottky structure contributions
- FIG. 13 shows the on state conduction waveform for the low-side switch
- FIG. 14 shows a detailed view of the MOSFET-Schottky structure sub-circuit shown in FIG. 5; and [0023] FIG. 15 shows the normalized gate displacement current during the device recovery for the cases of the 2.5% and 50% Schottky structure contribution.
- a trench power MOSFET includes a
- Schottky structure which consumes about 2.5% to 5% of the total active area while the field effect transistor consumes the remaining portion of the active area. It has been discovered that this results in the most optimum device efficiency. In one particular application, the loss contribution of the low-side switch of a DC-DC converter is substantially reduced when the power MOSFET device of the present invention is used as the low-side switch.
- the phrases "Schottky structure” and “trench MOS barrier Schottky (TMBS)" are used interchangeably in the specification and the drawings.
- FIG. 1 shows a cross-sectional view of a simplified example of an integrated trench MOSFET-Schottky diode structure fabricated on a silicon substrate 103.
- a plurality of trenches 100 are patterned and etched into substrate 103.
- Substrate 103 may comprise an upper n-type epitaxial layer (not shown).
- a thin dielectric layer 104 e.g., silicon dioxide
- conductive material 102 such as polysilicon is deposited to substantially fill each trench 100.
- a p-type well 108 is then formed between trenches 100 except between those trenches (e.g., 100-2 and 100-4) where Schottky diodes are to be formed.
- regions between trenches 100-2 and 100-4 where Schottky diodes are to be formed are masked during the p-well implant step.
- N+ source junctions 112 are then formed inside p-well regions 108, either before or after the formation of p+ heavy body regions 114.
- a layer of conductive material 116 such as titanium tungsten (TiW) or titanium nitride (TiNi) is then patterned and deposited on the surface of the substrate to make contact to n+ source junctions 112. The same material is used in the same step to form anode 118 of Schottky diode 110.
- Metal e.g., aluminum
- MOSFET source regions 112 as well as p+ heavy body 114 and Schottky anode 118.
- the MOS trench Schottky structure requires no new processing steps since it is a standard unit step in the MOSFET process flow.
- a preferred process for the trench MOSFET of the type shown in the exemplary embodiment of FIG. 1, is described in greater detail in commonly-assigned U.S. patent 6,429,481, titled “Field Effect Transistor and Method of its Manufacture, " by MO et al., which is hereby incorporated by reference in its entirety. It is to be understood, however, that the teachings of the present invention apply to other types of trench processes with, for example, different body structures or trench depths, different polarity implants, closed or open cell structures.
- the resulting structure includes Schottky diodes 110 that are formed between trenches 100-2 and 100-4 surrounded by trench MOSFET devices on either side.
- N-type substrate 103 forms the cathode terminal of Schottky diodes 310 as well as the drain terminal of the trench MOSFET.
- Conductive layer 118 provides the diode anode terminal that connects to the source terminal of the trench MOSFET.
- the polysilicon in trenches 100-2, 100-3 and 100-4 connects to the gate polysilicon (100-1 and 100-5) of the trench MOSFET and is therefore similarly driven.
- the Schottky diode as thus formed has several operational advantages.
- the MOS structure formed by the poly-filled trenches 100-2, 100- 3, and 100-4 forms a depletion region. This helps reduce the diode leakage current. Furthermore, the distance W between trenches 100-2 and 100-3, and between trenches 100-3 and 100-4 can be adjusted such that the growing depletion regions around adjacent trenches 100-2 and 100-3, and 100-3 and 100-4 overlap in the middle. This pinches off the drift region between Schottky barrier 118 and the underlying substrate 103. The net effect is a significant increase in the reverse voltage capability of the Schottky diode with little or no detrimental impact on its forward conduction capability.
- the distance W, or the width of the mesa wherein the Schottky diode is formed is smaller than inter-trench spacing for MOSFETs.
- the distance W can be, for example, 0.5 ⁇ m depending on the doping in the drift region and the gate oxide thickness.
- the second variation is in the number of adjacent trenches used to form the Schottky diodes 110.
- FIG. 1 shows two parallel Schottky diode mesas 110 are formed between three trenches 102-2, 102-3, and 102-4, the invention is not limited as such.
- FIG. 2 provides a simplified top view of the embodiment shown in FIG. 1.
- an exemplary open- cell trench MOSFET process is assumed where trenches extend in parallel.
- Eight trenches 202-1 to 202-8 where a double-mesa Schottky diode is formed between trenches 202-3, 202- 4, and 202-5 are shown.
- the distance W between the Schottky trenches is smaller than the other inter-trench spacings.
- each trench structure includes electrodes buried under a gate electrode as shown in FIGs. 4A and 4B. In FIG. 4A and 4B.
- MOSFET 400B includes active trenches 402B each having electrodes 411 buried under a gate electrode 410.
- a Schottky diode 428B is formed between two trenches 402L and 402R as shown.
- the charge balancing effect of biased electrodes 411 allows for increasing the doping concentration of the drift region without compromising the reverse blocking voltage. Higher doping concentration in the drift region in turn reduces the forward voltage drop for this structure.
- the depth of each trench as well as the number of the buried electrodes may vary.
- trench 402C has only one buried electrode 411, and gate electrodes 41 OS in the trenches flanking Schottky diode 428C connect to the source electrode as shown. Gate electrodes 41 OS can alternatively connect to the gate terminal of the MOSFET.
- the oxide thickness along the bottom of the trenches is made thicker than that along the trench sidewalls to advantageously reduce the gate to drain capacitance.
- the inventors have discovered, based on the simulation results as well as silicon data, that there is an optimum contribution of the Schottky structure area which maximizes the performance of the integrated device. More specifically, it has been discovered that a ratio of the total area of the Schottky structure to the total area of the MOSFET in the range of 2.5% to 5% results in optimum performance. In an exemplary embodiment wherein the MOSFET cell pitch is 2.5 ⁇ m and the pitch of a Schottky structure or a TMBS cell is 5 ⁇ m, a 2.5% ratio is obtained by forming one TMBS cell every 40 MOSFET cells.
- the silicon data was obtained form an integrated Schottky structure built on a 0.35 ⁇ m trench DMOS baseline process flow.
- the trench depth is 1 ⁇ m and the gate oxide is 400A.
- the starting material is 0.25 Ohm-cm and the Schottky interface used is Titanium with a work function of 4.3eV. These values are merely illustrative and not intended to be limiting.
- the simulation data was obtained using device simulator Medici.
- the mixed-mode circuit-device capability of Medici, combining finite element device models with nodal analysis of SPICE, is well suited for the intended device and circuit simulations.
- the simulation circuit for the diode recovery along with an example waveform for modeling diode recovery are shown in FIG. 5.
- the MOSFET-Schottky structure used in the modeling is shown FIG. 6.
- the Qrr silicon results along with the simulated values are shown in FIG. 10.
- the Qrr waveform in FIG. 10 shows a minimum point at about 2.5% Schottky structure contribution and rises rapidly with increasing Schottky structure area.
- a two phase DC-DC converter circuit was used to study the efficiency versus output current for the various contributions of Schottky structure.
- the high-side switching device was chosen from the same trench technology, but optimized for this location in the circuit.
- the normalized efficiency results of these tests are shown in FIG. 11. This result indicates that the low-side switch with 2.5% Schottky has the highest value (compared to other Schottky structure contribution percentages) at the maximum of the efficiency curves.
- the Qrr silicon results track the predictions of the device model, and the efficiency results could be equally well inferred from the power loss simulation results shown in FIG. 8.
- Fig. 12 shows the low-side switch turnoff-recovery waveform for 3 different Schottky structure contributions (0%, 2.5%, and 50%).
- FIG. 14 shows a detailed view of the MOSFET-Schottky structure sub-circuit shown in FIG. 5.
- FIG. 15 shows the normalized gate displacement current during the device recovery for the cases of the 2.5% and 50% Schottky structure contribution.
- the maximum current contribution of the gate terminal represents approximately half of the maximum total recovery current for the 2.5% Schottky structure contribution.
- the gate current makes up about 20% of the maximum current. This current is due to the gate-drain capacitance in the MOSFET and is thus a displacement current which is injected into the total recovery value as a consequence of the testing circuit configuration shown in FIG. 5.
- the present invention provides methods and structure for an optimized monolithically integrated Schottky diode and trench MOSFET.
- a Schottky diode within the cell array of the trench MOSFET so that the ratio of the Schottky structure area to the MOSFET area is in the range of 2.5% to 5%, the overall device efficiency is improved.
- the techniques taught by the present invention can be employed in trench processes using either an open-call or a closed-cell structure. Therefore, the scope of the present invention should be determined not with reference to the above description but should, instead, be determined with reference to the appended claims, along with their full scope of equivalents.
Abstract
Description
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/801,499 US20050199918A1 (en) | 2004-03-15 | 2004-03-15 | Optimized trench power MOSFET with integrated schottky diode |
US10/801,499 | 2004-03-15 |
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WO2005091799A2 true WO2005091799A2 (en) | 2005-10-06 |
WO2005091799A3 WO2005091799A3 (en) | 2006-09-28 |
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TW (1) | TW200531292A (en) |
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Cited By (1)
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WO2021215505A1 (en) * | 2020-04-24 | 2021-10-28 | 京セラ株式会社 | Semiconductor device and method for manufacturing semiconductor device |
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US20050199918A1 (en) | 2005-09-15 |
WO2005091799A3 (en) | 2006-09-28 |
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