WO2005117071A3 - Optoelektronisches halbleiterbauelement und gehäuse-grundkörper für ein derartiges bauelement - Google Patents

Optoelektronisches halbleiterbauelement und gehäuse-grundkörper für ein derartiges bauelement Download PDF

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Publication number
WO2005117071A3
WO2005117071A3 PCT/DE2005/000877 DE2005000877W WO2005117071A3 WO 2005117071 A3 WO2005117071 A3 WO 2005117071A3 DE 2005000877 W DE2005000877 W DE 2005000877W WO 2005117071 A3 WO2005117071 A3 WO 2005117071A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor chip
component
housing base
recess
optoelectronic semiconductor
Prior art date
Application number
PCT/DE2005/000877
Other languages
English (en)
French (fr)
Other versions
WO2005117071A2 (de
Inventor
Karlheinz Arndt
Original Assignee
Osram Opto Semiconductors Gmbh
Karlheinz Arndt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102004040468.2A external-priority patent/DE102004040468B4/de
Application filed by Osram Opto Semiconductors Gmbh, Karlheinz Arndt filed Critical Osram Opto Semiconductors Gmbh
Priority to US11/597,971 priority Critical patent/US8975646B2/en
Priority to EP05748711.8A priority patent/EP1751806B1/de
Priority to JP2007513672A priority patent/JP5366399B2/ja
Publication of WO2005117071A2 publication Critical patent/WO2005117071A2/de
Publication of WO2005117071A3 publication Critical patent/WO2005117071A3/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations

Abstract

Optoelektronisches Halbleiterbauelement mit mindestens einem Strahlung (11) aussendenden Halbleiterchip (1), der in einer Ausnehmung (2) eines Gehäuse-Grundkörpers (3) angeordnet ist, wobei die Ausnehmung (2) seitlich von einer den Halbleiterchip (1) umlaufenden Wand (31) begrenzt ist und zumindest teilweise mit einer Umhüllungsmasse (4) gefüllt ist, die den Halbleiterchip (1) überdeckt und die für eine vom Halbleiterchip (1) ausgesandte elektromagnetische Strahlung gut durchlässig ist. Eine die Ausnehmung (2) begrenzende Innenseite (32) der Wand (31) ist derart ausgebildet, dass in Draufsicht auf die Vorderseite des Halbleiterbauelements eine den Halbleiterchip (1) vollständig ringartig umlaufende Teilfläche (33) der Innenseite (32) ausgebildet ist, die gesehen von dem Strahlung aussendenden Halbleiterchip (1) im Schatten liegt und die vollständig umlaufend um den Halbleiterchip (1) zumindest teilweise von Umhüllungsmasse (4) bedeckt ist. Weiterhin ist ein Gehäuse-Grundkörper für ein solches Halbleiterbauelement angegeben.
PCT/DE2005/000877 2004-05-31 2005-05-12 Optoelektronisches halbleiterbauelement und gehäuse-grundkörper für ein derartiges bauelement WO2005117071A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US11/597,971 US8975646B2 (en) 2004-05-31 2005-05-12 Optoelectronic semiconductor component and housing base for such a component
EP05748711.8A EP1751806B1 (de) 2004-05-31 2005-05-12 Optoelektronisches halbleiterbauelement und gehäuse-grundkörper für ein derartiges bauelement
JP2007513672A JP5366399B2 (ja) 2004-05-31 2005-05-12 光電子半導体構成素子及び該構成素子のためのケーシング基体

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102004026858.4 2004-05-31
DE102004026858 2004-05-31
DE102004040468.2 2004-08-20
DE102004040468.2A DE102004040468B4 (de) 2004-05-31 2004-08-20 Optoelektronisches Halbleiterbauelement und Gehäuse-Grundkörper für ein derartiges Bauelement

Publications (2)

Publication Number Publication Date
WO2005117071A2 WO2005117071A2 (de) 2005-12-08
WO2005117071A3 true WO2005117071A3 (de) 2006-08-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2005/000877 WO2005117071A2 (de) 2004-05-31 2005-05-12 Optoelektronisches halbleiterbauelement und gehäuse-grundkörper für ein derartiges bauelement

Country Status (4)

Country Link
US (1) US8975646B2 (de)
EP (1) EP1751806B1 (de)
JP (1) JP5366399B2 (de)
WO (1) WO2005117071A2 (de)

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US9733357B2 (en) * 2009-11-23 2017-08-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Infrared proximity sensor package with improved crosstalk isolation
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JP5527286B2 (ja) * 2011-06-29 2014-06-18 豊田合成株式会社 発光装置
CN103262269B (zh) * 2011-11-24 2018-06-19 惠州科锐半导体照明有限公司 Led封装件
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Also Published As

Publication number Publication date
EP1751806B1 (de) 2019-09-11
WO2005117071A2 (de) 2005-12-08
JP2008501227A (ja) 2008-01-17
US8975646B2 (en) 2015-03-10
EP1751806A2 (de) 2007-02-14
US20080012033A1 (en) 2008-01-17
JP5366399B2 (ja) 2013-12-11

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