WO2005118597A1 - Preparation of organosilane esters - Google Patents
Preparation of organosilane esters Download PDFInfo
- Publication number
- WO2005118597A1 WO2005118597A1 PCT/EP2005/051494 EP2005051494W WO2005118597A1 WO 2005118597 A1 WO2005118597 A1 WO 2005118597A1 EP 2005051494 W EP2005051494 W EP 2005051494W WO 2005118597 A1 WO2005118597 A1 WO 2005118597A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- alcohol
- alkyl
- weight
- composition
- distillation
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
- C07F7/1872—Preparation; Treatments not provided for in C07F7/20
- C07F7/188—Preparation; Treatments not provided for in C07F7/20 by reactions involving the formation of Si-O linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
Definitions
- the present invention relates to a specific process for preparing organosilane esters and to a composition comprising an organosilane ester and its use.
- Organosilane esters are substances having a wide range of uses, e.g. in building protection compositions for waterproofing surfaces or for the crosslinking of structural elements, to name only a few.
- organosilane esters With a view to their applications, the specification of the organosilane esters has to meet increasingly stringent requirements.
- organohalosilanes can be esterified by means of usually excess alcohol or glycol.
- organosilane ester produced forms azeotropes with the esterifying alcohol or esterifying glycol, which makes isolation of the organosilane ester in satisfactory purity and on an economical scale extremely difficult or even impossible.
- the use of the synthesis or distillation auxiliary gives, after the reaction of organohalosilane and alcohol, a mixture comprising organosilane ester, alcohol and synthesis or distillation auxiliary which can, after targeted adjustment of the content of synthesis or distillation auxiliary, then be separated by distillation, with the synthesis auxiliary used substantially going into the gas phase under distillation conditions as a mixture with the alcohol present and giving a composition which comprises a particularly high proportion of organosilane ester and at least one hydrocarbon.
- Such a composition can advantageously be used for producing films.
- Such a film or layer has a dielectric constant of 1 ⁇ K ⁇ 4 and is thus advantageous, in particular, for electronic applications, e.g. in chip production.
- the present invention accordingly provides a process for preparing organosilane esters of the general formula I
- glycols of the general formula III
- R 4 alkyl such as methyl, ethyl, propyl, isopropyl, butyl or isobutyl, aryl such as benzyl or phenyl, or alkoxyalkyl such as methoxyethyl, ethoxyethyl, propoxyethyl or butoxyethyl,
- halosilane preferably chlorosilane
- the alcohol of the formula III in the presence or absence of at least one synthesis auxiliary, i.e. solvent, diluent, entrainer or distillation auxiliary, hydrogen halide, preferably hydrogen chloride
- synthesis auxiliary i.e. solvent, diluent, entrainer or distillation auxiliary
- hydrogen halide preferably hydrogen chloride
- - metal oxide preferably as a solution in an alcohol corresponding to the alkoxy present, in particular alkali metal or alkaline earth metal alkoxide from the group consisting of Li, Na, K, Mg
- the metal salt formed is filtered off and an amount of synthesis auxiliary is added at least once before or during the subsequent work-up by distillation of the resulting, generally clear, preferably neutralized product mixture, with the amount added in each case being such that no azeotrope of one or more components of the product mixture and the organosilane ester of the formula I
- a m a icohoi*yn is the amount of alcohol generally remaining after the esterification, the amount of alcohol added in the neutralization with alkoxide or alcoholic alkoxide solution
- the mass ratio of alcohol and synthesis auxiliary for carrying out the distillation is preferably set according to the relationship
- ni a i coho i-n eut X is the amount of alcohol added in the neutralization with alkoxide or alcoholic alkoxide solution
- compositions of possible azeotropes can generally be found in the standard literature, for example "Azeotropie Data", L. H. Horsley, (1952) American Chemical Society, Washington.
- the excess alcohol can thus, according to the invention, be removed advantageously, i.e. simply and economically, from the product mixture, advantageously to leave a main fraction which comprises essentially organosilane ester of the formula I.
- This fraction is a composition which comprises as further components hydrocarbon including hydrocarbons of the formulae IVa, IVb or IVc and also possibly alcohol of the formula III and surprisingly gives, when applied to produce a layer or film, a layer or film having a particularly low dielectric constant, advantageously 1 ⁇ ⁇ 4.
- Organohalosilanes in particular chlorosilanes, of the formula II which can be used in the process of the invention are, by way of example but not exclusively, silicon tetrachloride, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, tri- chlorosilane, methyldichlorosilane, dimethylchlorosilane, dichlorosilane, methylchlorosilane, triethylchlorosilane, diethyldichlorosilane, ethyltrichlorosilane, diethylchlorosilane, ethyldichlorosilane, monoethylmonochlorosilane, vinyltrichlorosilane, vinyldichlorosilane, vinylmethyldichlorosilane, : - vinyl- dimethylchlorosilane, phenyltrichlorosilane, diphenyl
- alcohol of the formula III for the esterification it is possible to use, for example, methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, tert-butanol, 2- methoxyethanol, ethoxyethanol and phenol.
- hydrocarbons such as benzene, toluene, xylene and xylene isomers
- halogenated hydrocarbons such as dichloromethane, trichloromethane and carbon tetrachloride
- a mixture of hydrocarbons of the formulae IVa, IVb or IVc can also be used.
- the esterification step preferably starts from a weight ratio of halosilane : synthesis auxiliary of from 1 : 0.25 to 1 : 10, particularly preferably from 1 : 0.5 to 1 : 5, in particular about 1 : 1.
- the reaction of the starting materials organohalosilane of the formula II and alcohol of the formula III is appropriately carried out at a temperature of from -40 to 220°C, preferably in the range from 0 to 180°C, advantageously from 40 to 150°C, particularly preferably from > 60 to 120°C, very particularly preferably from 65 to 100°C, in particular from 70 to 80°C.
- reaction of the starting materials in the process of the invention is preferably carried out at a pressure of from 0.001 to 50 bar abs., preferably in the pressure range from 0.1 to 20 bar abs., very particularly preferably in the pressure range from 0.25 to 10 bar abs. and in particular in the pressure range from 0.5 to 1 bar abs.
- reaction in the process of the invention is preferably carried out in a homogeneous phase.
- the distillation for working up the product mixture from the reaction in the process of the invention is appropriate carried out at a temperature at the bottom of from -40 to 220°C, preferably in the range from 0 to 140°C, particularly preferably from 20 to 85°C, with a pressure from 0.0001 to 10 bar abs. generally being set.
- the distillation is preferably carried out at a pressure of from 0.001 to 5 bar abs., particularly preferably at a pressure of from 0.001 to 2.5 bar abs. and very particularly preferably at a pressure of from 0.001 to 1 bar abs.
- reaction vessel it is possible to use a heatable, pressure-rated or vacuum-resistant reactor which is appropriately largely resistant to the components occurring in the reaction.
- the reactor can have, inter alia, an agitator and a facility for measuring and regulating the temperature and be connected to a distillation unit.
- the organohalosilane for example organochlorosilane
- the alcohol for example methanol or ethanol
- the organochlorosilane in the reactor and add the alcohol or vice versa.
- a defined amount of synthesis auxiliary of the formulae IVa, IVb or IVc can be added to the reaction mixture, cf., for example, the relationships (1) and (2).
- the starting materials are usually used in pure to highly pure form.
- the reaction can then be carried out with good mixing and temperature control.
- the conditions for the reaction in particular for the composition of the reaction mixture and also pressure and temperature, are set so that the reaction occurs in a homogeneous phase.
- hydrogen halide in particular hydrogen chloride
- metal alkoxide for example as a solution in alcohol, e.g.
- sodium methoxide in methanol or sodium ethoxide in ethanol, or corresponding metal alkoxide powders can be used to complete the reaction and to neutralize residual amounts of hydrogen chloride.
- the salt formed can be separated off, for example by filtration, and the product mixture can subsequently be worked up by distillation.
- the content of synthesis auxiliary in the product mixture is set according to the invention as a function of the alcohol content.
- defined amounts of synthesis auxiliary, cf., for example, the relationships (1) and (2), can also be added to the product mixture at this stage of the process.
- the distillation is generally carried out as a fractional distillation in a manner known per se. Further defined amounts of synthesis auxiliary can also be added during the distillation. Thus, it can be advantageous firstly to remove alcohol or synthesis auxiliary or azeotrope from the system before the organosilane ester fraction is taken off.
- a composition which is rich in organosilane ester and comprises, in addition to the organosilane ester, defined amounts of hydrocarbon of the formulae IVa, IVb or IVc and possibly defined amounts of alcohol of the formula III can advantageously be obtained in the manner described.
- organosilane esters of the formula I for example methyltrimethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, trimethylmethoxysilane, trimethylethoxysilane, trimethoxysilane, triethoxysilane, methyldimethoxysilane, methyl- diethoxysilane, dimethylmethoxysilane, dimethylethoxysilane, dimethoxysilane, diethoxysilane, methylmethoxysilane, methylethoxysilane, triethylmethoxysilane, triethylethoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, diethylmethoxysilane, diethylethoxysilane, ethyldimethoxysilane, die
- the present invention further provides a process for preparing a composition comprising more than 98% by weight of organosilane ester of the formula I and less than 2% by weight of hydrocarbons of at least one of the formulae IVa, IVb and IVc, in each case based on the total composition, by carrying out the process as claimed in any of claims 1 to 9 and discharging the fraction comprising more than 98% by weight of organosilane ester in the fractional distillation.
- the present invention likewise provides a composition comprising more than 98% by weight of an organosilane ester of the formula I and less than 2.0% by weight of at least one hydrocarbon of at least one of the formulae IVa, IVb and IVc, in each case based on the total composition, obtainable as claimed in claim 10.
- the present invention therefore also provides a composition consisting of more than 98% by weight of organosilane ester of the formula I and less than 2.0% by weight of at least one hydrocarbon, based on the total composition, with the sum of the components of the composition being 100% by weight.
- the composition of the invention has a proportional content of an organosilane ester of from 99.0 to 99.99% by weight, particularly preferably from 99.4 to 99.95% by weight, very particularly preferably from 99.6 to 99.9% by weight.
- composition of the invention also preferably has a proportional content of hydrocarbons of from 0.001 to 1.5% by weight, particularly preferably from 0.005 to 1% by weight, very particularly preferably from 0.05 to 0.5% by weight, in particular from 0.01 to 0.2% by weight.
- composition of the invention can likewise have a proportional content of an alcohol, preferably an alcohol corresponding to the alkoxide of the silane ester, of from 0.0001 to 0.5% by weight, particularly preferably from 0.0005 to 0.2% by weight, very particularly preferably from 0.001 to 0.1% by weight.
- an alcohol preferably an alcohol corresponding to the alkoxide of the silane ester
- the present invention provides for the use of a composition according to the invention as precursor for producing a layer having a dielectric constant of 1 ⁇ K ⁇ 4, particularly preferably 1.5 ⁇ K ⁇ 3.5, very particularly preferably 1.8 ⁇ K ⁇ 2.8.
- composition of the invention can be used, by way of example but not exclusively, as precursors or vaporizable, silicon-containing starting materials in film forming processes which operate according to the CVD or spin-on method.
- CVD method Here, precursors based on silicon or mixtures of precursors are usually vaporized in suitable reactors, e.g. Applied Centura HAT, Novellus Concept One 200 or ASM Eagle-10, and are allowed to react on hot surfaces, e.g. a silicon wafer, to form a layer of solid material. Further developments of this method, for example RPCVD (reduced pressure chemical vapor deposition), LPCVD (low pressure chemical vapor deposition) and PECVD (plasma enhanced chemical vapor deposition), which make more rapid deposition at sometimes significantly reduced temperatures possible, have also been found to be advantageous.
- suitable reactors e.g. Applied Centura HAT, Novellus Concept One 200 or ASM Eagle-10
- RPCVD reduced pressure chemical vapor deposition
- LPCVD low pressure chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- liquid silicon-containing compounds, mixtures of liquid silicon-containing compounds, solutions of silicon-containing compounds in suitable vaporizable solvents or solutions of silicon-containing compounds in suitable vaporizable solvents or decomposable, pore-forming substances e.g. compositions comprising organic polymers such as POM, PMMA, PEO, PPO, are placed on the surface of a silicon wafer and a uniform thin film is produced by rotation of the wafer.
- the film produced in this way is cured by means of a subsequent thermal treatment at from 20 to 500°C.
- an amount of cyclohexane of 398.8 g is to be set in the initial charge for carrying out the distillation.
- the azeotrope to be distilled off boils at about 49°C and contains 29.8% by mass of methanol. After neutralization with methanolic sodium methoxide solution, 147 g of methanol are present in the product mixture. The esterification was carried out in 250 g of n-hexane.
- Table 1 shows that separation into the pure components by distillation is not possible. Methanol obviously forms an azeotrope with dimethyldimethoxysilane which boils at 62"C and has a composition of about 40 GC-% by area of methanol and about 60 GC-% by area of dimethyldimethoxysilane.
- Example 2
- Example 3 shows that the addition of n-hexane as early as during the reaction of the starting materials is advantageous.
- the highest yield of DMDMO at the lowest consumption of sodium methoxide is obtained in this way.
- Example 4 500 g of dimethyldichlorosilane are placed in a four-neck flask provided with reflux condenser, mechanical stirrer, thermometer and a Teflon feed line. While stirring continually, 845 g of the methanol/n-hexane first fraction distilled off in Example 2 are metered in at 45 - 55°C over a period of 5.5 hours. The mixture is subsequently neutralized with 279.5 g of sodium methoxide solution (30% in methanol). The salt formed is filtered off. After completion of the work-up, 306 g of DMDMO are obtained. Example 4 shows that the first fraction can be recirculated to the reaction.
- Example 5 shows that DMDMO of very high purity as is required, in particular, in the electronic applications mentioned can be obtained by the process.
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020067024739A KR101187148B1 (en) | 2004-05-26 | 2005-04-04 | Preparation of organosilane esters |
EP05731644A EP1758912B1 (en) | 2004-05-26 | 2005-04-04 | Preparation of organosilane esters |
AT05731644T ATE527270T1 (en) | 2004-05-26 | 2005-04-04 | PRODUCTION OF ORGANOSILANE ESTERS |
US11/569,585 US7507850B2 (en) | 2004-05-26 | 2005-04-04 | Preparation of organosilane esters |
ES05731644T ES2373727T3 (en) | 2004-05-26 | 2005-04-04 | PREPARATION OF ESTERES DE ORGANOSILANO. |
CN2005800168069A CN1956990B (en) | 2004-05-26 | 2005-04-04 | Preparation of organosilane esters |
JP2007513888A JP5455304B2 (en) | 2004-05-26 | 2005-04-04 | Production method of organosilane ester |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004025766A DE102004025766A1 (en) | 2004-05-26 | 2004-05-26 | Preparation of organosilane esters |
DE102004025766.3 | 2004-05-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005118597A1 true WO2005118597A1 (en) | 2005-12-15 |
Family
ID=34963777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2005/051494 WO2005118597A1 (en) | 2004-05-26 | 2005-04-04 | Preparation of organosilane esters |
Country Status (9)
Country | Link |
---|---|
US (1) | US7507850B2 (en) |
EP (1) | EP1758912B1 (en) |
JP (1) | JP5455304B2 (en) |
KR (1) | KR101187148B1 (en) |
CN (1) | CN1956990B (en) |
AT (1) | ATE527270T1 (en) |
DE (1) | DE102004025766A1 (en) |
ES (1) | ES2373727T3 (en) |
WO (1) | WO2005118597A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109251220A (en) * | 2018-10-22 | 2019-01-22 | 浙江衢州正邦有机硅有限公司 | A kind of preparation method of dimethyldimethoxysil,ne |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004037675A1 (en) * | 2004-08-04 | 2006-03-16 | Degussa Ag | Process and apparatus for purifying hydrogen-containing silicon tetrachloride or germanium tetrachloride |
DE102005041137A1 (en) | 2005-08-30 | 2007-03-01 | Degussa Ag | Plasma reactor for cleaning silicon tetrachloride or germanium tetrachloride, comprises reactor housing, micro unit for plasma treatment, metallic heat exchanger, dielectric, perforated plate, lattice or network and high voltage electrode |
DE102006003464A1 (en) * | 2006-01-25 | 2007-07-26 | Degussa Gmbh | Formation of silicon layer on substrate surface by gas phase deposition, in process for solar cell manufacture, employs silicon tetrachloride as precursor |
DE102007007874A1 (en) | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Process for the preparation of higher silanes |
DE102007014107A1 (en) | 2007-03-21 | 2008-09-25 | Evonik Degussa Gmbh | Work-up of boron-containing chlorosilane streams |
DE102007050199A1 (en) * | 2007-10-20 | 2009-04-23 | Evonik Degussa Gmbh | Removal of foreign metals from inorganic silanes |
DE102007050573A1 (en) * | 2007-10-23 | 2009-04-30 | Evonik Degussa Gmbh | Large containers for handling and transporting high purity and ultrapure chemicals |
DE102007059170A1 (en) * | 2007-12-06 | 2009-06-10 | Evonik Degussa Gmbh | Catalyst and process for dismutating hydrogen halosilanes |
DE102008004396A1 (en) * | 2008-01-14 | 2009-07-16 | Evonik Degussa Gmbh | Plant and method for reducing the content of elements, such as boron, in halosilanes |
DE102008002537A1 (en) * | 2008-06-19 | 2009-12-24 | Evonik Degussa Gmbh | Process for the removal of boron-containing impurities from halosilanes and plant for carrying out the process |
DE102013202325A1 (en) | 2013-02-13 | 2014-08-14 | Evonik Industries Ag | Process for the esterification of silicon halide compounds in a column and apparatus suitable therefor |
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WO1997018219A1 (en) | 1995-11-16 | 1997-05-22 | Eagle-Picher Industries, Inc. | Purified tetraethoxysilane and method of purifying |
DE19755597A1 (en) | 1997-12-15 | 1999-06-17 | Huels Chemische Werke Ag | Process for the preparation of alkoxysilanes |
DE19941283A1 (en) | 1998-11-06 | 2000-05-11 | Degussa | Process for the production of low-chloride or chloride-free alkoxysilanes |
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JPS5511538A (en) * | 1978-07-11 | 1980-01-26 | Mitsubishi Chem Ind Ltd | Production of methoxysilane |
DE3744211C1 (en) | 1987-12-24 | 1989-04-13 | Huels Troisdorf | Process for the preparation of cyanopropylalkoxysilanes and device for carrying out the process |
US5248803A (en) * | 1991-10-16 | 1993-09-28 | Tonen Corporation | Silane compound and processes for the preparation thereof |
JPH0853472A (en) * | 1994-08-11 | 1996-02-27 | Mitsubishi Chem Corp | Method for producing trialkoxysilane |
EP0702017B1 (en) | 1994-09-14 | 2001-11-14 | Degussa AG | Process for the preparation of aminofunctional organosilanes with low chlorine contamination |
DE19516386A1 (en) | 1995-05-04 | 1996-11-07 | Huels Chemische Werke Ag | Process for the preparation of chlorine-functional organosilanes poor or free amino-functional organosilanes |
JP3398266B2 (en) * | 1995-08-24 | 2003-04-21 | 東燃ゼネラル石油株式会社 | Silane compound and method for producing the same |
DE19628588A1 (en) | 1996-07-16 | 1998-01-22 | Huels Chemische Werke Ag | Cyclic silane esters and their solvolysis products and processes for producing the cyclic silane esters and solvolysis products |
DE19649023A1 (en) | 1996-11-27 | 1998-05-28 | Huels Chemische Werke Ag | Process for removing residual amounts of acidic chlorine in carbonoyloxysilanes |
DE19649028A1 (en) | 1996-11-27 | 1998-05-28 | Huels Chemische Werke Ag | Process for the continuous production of carbonoyloxysilanes |
DE69827259T2 (en) * | 1997-07-15 | 2006-02-16 | Asahi Kasei Kabushiki Kaisha | ALKOXYSILANE AND ORGANIC POLYMER COMPOSITIONS FOR THE PREPARATION OF THIN ISOLATING LAYERS AND THEIR USE |
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-
2004
- 2004-05-26 DE DE102004025766A patent/DE102004025766A1/en not_active Withdrawn
-
2005
- 2005-04-04 EP EP05731644A patent/EP1758912B1/en not_active Not-in-force
- 2005-04-04 ES ES05731644T patent/ES2373727T3/en active Active
- 2005-04-04 CN CN2005800168069A patent/CN1956990B/en not_active Expired - Fee Related
- 2005-04-04 US US11/569,585 patent/US7507850B2/en not_active Expired - Fee Related
- 2005-04-04 WO PCT/EP2005/051494 patent/WO2005118597A1/en active Application Filing
- 2005-04-04 KR KR1020067024739A patent/KR101187148B1/en not_active IP Right Cessation
- 2005-04-04 JP JP2007513888A patent/JP5455304B2/en not_active Expired - Fee Related
- 2005-04-04 AT AT05731644T patent/ATE527270T1/en not_active IP Right Cessation
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WO1997018219A1 (en) | 1995-11-16 | 1997-05-22 | Eagle-Picher Industries, Inc. | Purified tetraethoxysilane and method of purifying |
DE19755597A1 (en) | 1997-12-15 | 1999-06-17 | Huels Chemische Werke Ag | Process for the preparation of alkoxysilanes |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109251220A (en) * | 2018-10-22 | 2019-01-22 | 浙江衢州正邦有机硅有限公司 | A kind of preparation method of dimethyldimethoxysil,ne |
Also Published As
Publication number | Publication date |
---|---|
JP2008500305A (en) | 2008-01-10 |
ES2373727T3 (en) | 2012-02-08 |
EP1758912A1 (en) | 2007-03-07 |
DE102004025766A1 (en) | 2005-12-22 |
US20070249785A1 (en) | 2007-10-25 |
CN1956990B (en) | 2010-12-22 |
JP5455304B2 (en) | 2014-03-26 |
EP1758912B1 (en) | 2011-10-05 |
KR20070020253A (en) | 2007-02-20 |
KR101187148B1 (en) | 2012-09-28 |
ATE527270T1 (en) | 2011-10-15 |
CN1956990A (en) | 2007-05-02 |
US7507850B2 (en) | 2009-03-24 |
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