WO2006005062A3 - Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices - Google Patents
Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices Download PDFInfo
- Publication number
- WO2006005062A3 WO2006005062A3 PCT/US2005/023755 US2005023755W WO2006005062A3 WO 2006005062 A3 WO2006005062 A3 WO 2006005062A3 US 2005023755 W US2005023755 W US 2005023755W WO 2006005062 A3 WO2006005062 A3 WO 2006005062A3
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- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- emitting devices
- chip
- substrate
- scale
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT05769290T ATE524839T1 (en) | 2004-06-30 | 2005-06-30 | METHOD FOR ENCAPSULATING A LIGHT-EMITTING COMPONENT AND ENCAPSULATED LIGHT-EMITTING COMPONENTS ON A CHIP SCALE |
JP2007520428A JP4996463B2 (en) | 2004-06-30 | 2005-06-30 | Chip scale method for packaging light emitting device and light emitting device packaged on chip scale |
KR1020077002238A KR101193740B1 (en) | 2004-06-30 | 2005-06-30 | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
EP05769290A EP1774598B1 (en) | 2004-06-30 | 2005-06-30 | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58418704P | 2004-06-30 | 2004-06-30 | |
US60/584,187 | 2004-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006005062A2 WO2006005062A2 (en) | 2006-01-12 |
WO2006005062A3 true WO2006005062A3 (en) | 2006-07-13 |
Family
ID=35783407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/023755 WO2006005062A2 (en) | 2004-06-30 | 2005-06-30 | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
Country Status (7)
Country | Link |
---|---|
US (1) | US7329905B2 (en) |
EP (1) | EP1774598B1 (en) |
JP (1) | JP4996463B2 (en) |
KR (1) | KR101193740B1 (en) |
CN (1) | CN101032034A (en) |
AT (1) | ATE524839T1 (en) |
WO (1) | WO2006005062A2 (en) |
Families Citing this family (171)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9368428B2 (en) * | 2004-06-30 | 2016-06-14 | Cree, Inc. | Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
JP4747726B2 (en) * | 2004-09-09 | 2011-08-17 | 豊田合成株式会社 | Light emitting device |
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US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
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US7646035B2 (en) * | 2006-05-31 | 2010-01-12 | Cree, Inc. | Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices |
US8835952B2 (en) | 2005-08-04 | 2014-09-16 | Cree, Inc. | Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants |
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US20070108463A1 (en) * | 2005-11-17 | 2007-05-17 | Chua Janet B Y | Light-emitting diode with UV-blocking nano-particles |
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US7697584B2 (en) * | 2006-10-02 | 2010-04-13 | Philips Lumileds Lighting Company, Llc | Light emitting device including arrayed emitters defined by a photonic crystal |
US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
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US20090026486A1 (en) * | 2007-07-26 | 2009-01-29 | Sharp Kabushiki Kaisha | Nitride based compound semiconductor light emitting device and method of manufacturing the same |
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US20090144881A1 (en) * | 2007-12-10 | 2009-06-11 | Michael Harmik Panosian | Work gloves with marking indicia |
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US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US7732829B2 (en) * | 2008-02-05 | 2010-06-08 | Hymite A/S | Optoelectronic device submount |
EP2240968A1 (en) * | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
US7781780B2 (en) | 2008-03-31 | 2010-08-24 | Bridgelux, Inc. | Light emitting diodes with smooth surface for reflective electrode |
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DE102008028886B4 (en) * | 2008-06-18 | 2024-02-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Radiation-emitting component and method for producing a radiation-emitting component |
US9147812B2 (en) * | 2008-06-24 | 2015-09-29 | Cree, Inc. | Methods of assembly for a semiconductor light emitting device package |
US8058669B2 (en) * | 2008-08-28 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode integration scheme |
DE102008057174A1 (en) * | 2008-11-13 | 2010-05-20 | Osram Opto Semiconductors Gmbh | Surface mountable device |
DE102008057350A1 (en) * | 2008-11-14 | 2010-05-20 | Osram Opto Semiconductors Gmbh | Radiation-emitting component and method for its production |
TW201034256A (en) * | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US20100176507A1 (en) * | 2009-01-14 | 2010-07-15 | Hymite A/S | Semiconductor-based submount with electrically conductive feed-throughs |
US8405115B2 (en) * | 2009-01-28 | 2013-03-26 | Maxim Integrated Products, Inc. | Light sensor using wafer-level packaging |
US20120049214A1 (en) * | 2009-04-06 | 2012-03-01 | Lowes Theodore D | Monolithic Multi-Junction Light Emitting Devices Including Multiple Groups of Light Emitting Diodes |
US9093293B2 (en) | 2009-04-06 | 2015-07-28 | Cree, Inc. | High voltage low current surface emitting light emitting diode |
US8096671B1 (en) | 2009-04-06 | 2012-01-17 | Nmera, Llc | Light emitting diode illumination system |
US8476668B2 (en) * | 2009-04-06 | 2013-07-02 | Cree, Inc. | High voltage low current surface emitting LED |
TWI480962B (en) * | 2009-04-09 | 2015-04-11 | Lextar Electronics Corp | Light-emitting diode package and wafer-level packaging process of a light-emitting diode |
KR101092063B1 (en) * | 2009-04-28 | 2011-12-12 | 엘지이노텍 주식회사 | Light emitting device package and method for fabricating the same |
US9269875B2 (en) * | 2009-05-20 | 2016-02-23 | Intellectual Discovery Co., Ltd. | Light emitter |
CN102414275A (en) * | 2009-05-29 | 2012-04-11 | 道康宁公司 | Silicone composition for producing transparent silicone materials and optical devices |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) * | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US8207554B2 (en) | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9502612B2 (en) | 2009-09-20 | 2016-11-22 | Viagan Ltd. | Light emitting diode package with enhanced heat conduction |
DE112010003715T8 (en) * | 2009-09-20 | 2013-01-31 | Viagan Ltd. | Assembly of electronic components at wafer level |
DE102009051746A1 (en) * | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
DE102009051129A1 (en) | 2009-10-28 | 2011-06-01 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
DE102009053064A1 (en) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Protective diode structure thin film semiconductor device and method of fabricating a thin film semiconductor device |
CN102804430B (en) * | 2010-01-19 | 2015-11-25 | Lg伊诺特有限公司 | Encapsulating structure and manufacture method thereof |
JPWO2011093405A1 (en) * | 2010-02-01 | 2013-06-06 | 有限会社Mtec | Optical semiconductor device with chip size package |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110186874A1 (en) * | 2010-02-03 | 2011-08-04 | Soraa, Inc. | White Light Apparatus and Method |
KR100999800B1 (en) * | 2010-02-04 | 2010-12-08 | 엘지이노텍 주식회사 | Light emitting device package and method for fabricating the same |
KR100999784B1 (en) * | 2010-02-23 | 2010-12-08 | 엘지이노텍 주식회사 | Light emitting device, method of fabricating the light emitting device and light emitting device package |
JP5101645B2 (en) | 2010-02-24 | 2012-12-19 | 株式会社東芝 | Semiconductor light emitting device |
US8183580B2 (en) * | 2010-03-02 | 2012-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermally-enhanced hybrid LED package components |
US8441020B2 (en) | 2010-03-10 | 2013-05-14 | Micron Technology, Inc. | Light emitting diode wafer-level package with self-aligning features |
KR101020974B1 (en) * | 2010-03-17 | 2011-03-09 | 엘지이노텍 주식회사 | Light emitting device, method for manufacturing the light emitting device and light emitting device package |
KR101637583B1 (en) * | 2010-03-30 | 2016-07-07 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
DE102010013494A1 (en) * | 2010-03-31 | 2011-10-06 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
DE112011101156T5 (en) * | 2010-04-01 | 2013-01-24 | Panasonic Corporation | Light-emitting diode element and light-emitting diode device |
JP2011222724A (en) * | 2010-04-08 | 2011-11-04 | Panasonic Electric Works Co Ltd | Light-emitting device and manufacturing method the same |
KR101039879B1 (en) * | 2010-04-12 | 2011-06-09 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
KR101679756B1 (en) * | 2010-05-18 | 2016-12-07 | 엘지이노텍 주식회사 | Light emitting diode package and method for manufacturing the same |
JP4875185B2 (en) * | 2010-06-07 | 2012-02-15 | 株式会社東芝 | Optical semiconductor device |
KR101688379B1 (en) * | 2010-07-12 | 2016-12-22 | 삼성전자주식회사 | Light emitting device and manufacturing method of the same |
US9293678B2 (en) | 2010-07-15 | 2016-03-22 | Micron Technology, Inc. | Solid-state light emitters having substrates with thermal and electrical conductivity enhancements and method of manufacture |
WO2012016377A1 (en) * | 2010-08-03 | 2012-02-09 | Industrial Technology Research Institute | Light emitting diode chip, light emitting diode package structure, and method for forming the same |
DE102010034565A1 (en) | 2010-08-17 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Method for producing at least one optoelectronic semiconductor component |
CN102386306B (en) * | 2010-08-27 | 2016-04-13 | 比亚迪股份有限公司 | A kind of method for packing of LED chip and encapsulating structure |
TWI462340B (en) | 2010-09-08 | 2014-11-21 | Epistar Corp | A light emitting structure and a manufacturing method thereof |
KR101711961B1 (en) * | 2010-09-10 | 2017-03-03 | 삼성전자주식회사 | Light emitting device |
DE102010045403A1 (en) * | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
US20120074432A1 (en) * | 2010-09-29 | 2012-03-29 | Amtran Technology Co., Ltd | Led package module and manufacturing method thereof |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
CN102468380A (en) * | 2010-11-23 | 2012-05-23 | 孙智江 | Manufacturing method of LED (Light Emitting Diode) electrodes with equal heights |
KR101591991B1 (en) | 2010-12-02 | 2016-02-05 | 삼성전자주식회사 | Light emitting device package and method thereof |
KR101875247B1 (en) | 2011-01-24 | 2018-07-05 | 루미리즈 홀딩 비.브이. | Light emitting device and method of creating the same |
CN102683538B (en) | 2011-03-06 | 2016-06-08 | 维亚甘有限公司 | LED package and manufacture method |
KR101766298B1 (en) | 2011-03-30 | 2017-08-08 | 삼성전자 주식회사 | Light emitting device and Method of manufacturing the same |
US8592847B2 (en) | 2011-04-15 | 2013-11-26 | Epistar Corporation | Light-emitting device |
TW201242122A (en) * | 2011-04-15 | 2012-10-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device |
CN111509103A (en) * | 2011-06-01 | 2020-08-07 | 亮锐控股有限公司 | Light emitting device bonded to a support substrate |
WO2012164431A1 (en) | 2011-06-01 | 2012-12-06 | Koninklijke Philips Electronics N.V. | Method of attaching a light emitting device to a support substrate |
DE102011103412A1 (en) * | 2011-06-06 | 2012-12-06 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor component and such a semiconductor component |
US9653643B2 (en) | 2012-04-09 | 2017-05-16 | Cree, Inc. | Wafer level packaging of light emitting diodes (LEDs) |
US9666764B2 (en) | 2012-04-09 | 2017-05-30 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die |
CN103650171B (en) | 2011-07-15 | 2018-09-18 | 亮锐控股有限公司 | Semiconductor device is attached to the method for supporting substrate |
WO2013010389A1 (en) * | 2011-07-15 | 2013-01-24 | 中国科学院半导体研究所 | Light emitting diode encapsulation structure and manufacturing method thereof |
CN102280562A (en) * | 2011-08-02 | 2011-12-14 | 日月光半导体制造股份有限公司 | Package process and structure of light-emitting diode |
WO2013021305A1 (en) * | 2011-08-10 | 2013-02-14 | Koninklijke Philips Electronics N.V. | Wafer level processing of leds using carrier wafer |
US9490239B2 (en) | 2011-08-31 | 2016-11-08 | Micron Technology, Inc. | Solid state transducers with state detection, and associated systems and methods |
US8809897B2 (en) | 2011-08-31 | 2014-08-19 | Micron Technology, Inc. | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
US9488324B2 (en) | 2011-09-02 | 2016-11-08 | Soraa, Inc. | Accessories for LED lamp systems |
KR101853327B1 (en) * | 2011-11-09 | 2018-05-02 | 삼성전자주식회사 | Method for manufacturing light emitting device package |
US20130181227A1 (en) * | 2012-01-12 | 2013-07-18 | King Dragon International Inc. | LED Package with Slanting Structure and Method of the Same |
WO2013116086A1 (en) * | 2012-01-30 | 2013-08-08 | Cree, Inc. | Low temperature high strength metal stack for die attachment |
KR20130101297A (en) * | 2012-03-05 | 2013-09-13 | 삼성전자주식회사 | Semiconductor light emitting device |
EP2823515A4 (en) | 2012-03-06 | 2015-08-19 | Soraa Inc | Light emitting diodes with low refractive index material layers to reduce light guiding effects |
JP2013197310A (en) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | Light-emitting device |
WO2013141421A1 (en) * | 2012-03-22 | 2013-09-26 | 주식회사 씨엘포토닉스 | Horizontal power led device and method for manufacturing same |
US8708523B2 (en) * | 2012-03-30 | 2014-04-29 | Uniled Lighting Taiwan Inc. | Panorama lamp with 360 degree peripheral illumination |
US8985794B1 (en) | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
CN104350617A (en) * | 2012-06-12 | 2015-02-11 | 株式会社村田制作所 | Light-emitting device |
DE102012213343B4 (en) * | 2012-07-30 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | PROCESS FOR MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE WITH SAPPHIRE FLIP CHIP |
US8765500B2 (en) * | 2012-08-24 | 2014-07-01 | Tsmc Solid State Lighting Ltd. | Method and apparatus for fabricating phosphor-coated LED dies |
JP6032823B2 (en) * | 2012-09-27 | 2016-11-30 | 富士機械製造株式会社 | Semiconductor device and manufacturing method thereof |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
CN104603932A (en) | 2012-12-21 | 2015-05-06 | 松下知识产权经营株式会社 | Electronic component package and method for producing same |
JP5624698B1 (en) * | 2012-12-21 | 2015-11-12 | パナソニック株式会社 | Electronic component package and manufacturing method thereof |
WO2014097643A1 (en) * | 2012-12-21 | 2014-06-26 | パナソニック株式会社 | Electronic component package and method for manufacturing same |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US9825209B2 (en) | 2012-12-21 | 2017-11-21 | Panasonic Intellectual Property Management Co., Ltd. | Electronic component package and method for manufacturing the same |
WO2014097642A1 (en) | 2012-12-21 | 2014-06-26 | パナソニック株式会社 | Electronic component package and method for manufacturing same |
TWI557942B (en) | 2013-02-04 | 2016-11-11 | 財團法人工業技術研究院 | Light emitting diode |
US9548424B2 (en) | 2013-02-04 | 2017-01-17 | Industrial Technology Research Institute | Light emitting diode |
US9425359B2 (en) | 2013-02-04 | 2016-08-23 | Industrial Technology Research Institute | Light emitting diode |
US9318674B2 (en) * | 2013-02-05 | 2016-04-19 | Cree, Inc. | Submount-free light emitting diode (LED) components and methods of fabricating same |
CN104241262B (en) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | Light emitting device and display device |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
WO2015008243A1 (en) * | 2013-07-19 | 2015-01-22 | Koninklijke Philips N.V. | Pc led with optical element and without substrate carrier |
FR3011383B1 (en) * | 2013-09-30 | 2017-05-26 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES WITH ELECTROLUMINESCENT DIODES |
TWI533478B (en) * | 2013-10-14 | 2016-05-11 | 新世紀光電股份有限公司 | Flip chip light emitting diode package structure |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
DE102013113190A1 (en) * | 2013-11-28 | 2015-05-28 | Osram Oled Gmbh | Electronic component |
WO2015092579A1 (en) * | 2013-12-18 | 2015-06-25 | Koninklijke Philips N.V. | Reflective solder mask layer for led phosphor package |
DE102014105734A1 (en) * | 2014-04-23 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
US20150325748A1 (en) | 2014-05-07 | 2015-11-12 | Genesis Photonics Inc. | Light emitting device |
US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
CN110010750B (en) * | 2014-06-18 | 2021-11-09 | 艾克斯展示公司技术有限公司 | Micro-assembly LED display |
TWI641285B (en) | 2014-07-14 | 2018-11-11 | 新世紀光電股份有限公司 | Light emitting module and method for manufacturing light emitting unit |
DE102014116079A1 (en) * | 2014-11-04 | 2016-05-04 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for its production |
US10217904B2 (en) | 2015-02-03 | 2019-02-26 | Epistar Corporation | Light-emitting device with metallized mounting support structure |
US11431146B2 (en) * | 2015-03-27 | 2022-08-30 | Jabil Inc. | Chip on submount module |
US20160293811A1 (en) * | 2015-03-31 | 2016-10-06 | Cree, Inc. | Light emitting diodes and methods with encapsulation |
US9824952B2 (en) | 2015-03-31 | 2017-11-21 | Lumens Co., Ltd. | Light emitting device package strip |
US11061276B2 (en) | 2015-06-18 | 2021-07-13 | X Display Company Technology Limited | Laser array display |
US10074635B2 (en) * | 2015-07-17 | 2018-09-11 | Cree, Inc. | Solid state light emitter devices and methods |
DE102015112280A1 (en) * | 2015-07-28 | 2017-02-02 | Osram Opto Semiconductors Gmbh | Component with a metallic carrier and method for the production of components |
US20170104135A1 (en) * | 2015-10-13 | 2017-04-13 | Sensor Electronic Technology, Inc. | Light Emitting Diode Mounting Structure |
US10008483B2 (en) | 2016-04-05 | 2018-06-26 | X-Celeprint Limited | Micro-transfer printed LED and color filter structure |
US10782002B2 (en) | 2016-10-28 | 2020-09-22 | X Display Company Technology Limited | LED optical components |
RU169951U1 (en) * | 2016-11-11 | 2017-04-07 | Общество с ограниченной ответственностью "ЛЕД-Инновации" | LED Chip |
US11282992B2 (en) * | 2016-11-22 | 2022-03-22 | National Institute Of Information And Communications Technology | Light-emitting module provided with semiconductor light-emitting element that emits deep ultraviolet light |
WO2020024282A1 (en) * | 2018-08-03 | 2020-02-06 | 长江存储科技有限责任公司 | Memory structure and method for forming same |
JP6633111B2 (en) * | 2018-02-19 | 2020-01-22 | アルパッド株式会社 | Light emitting unit and semiconductor light emitting device |
CN110568567A (en) * | 2018-06-06 | 2019-12-13 | 菲尼萨公司 | optical fiber printed circuit board assembly surface cleaning and roughening |
EP3806152B1 (en) | 2019-10-11 | 2022-08-24 | Imec VZW | A method of forming a semiconductor device structure |
CN113257972B (en) * | 2021-07-15 | 2022-03-08 | 元旭半导体科技股份有限公司 | Silicon-based light emitting diode structure and preparation method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0704947A1 (en) * | 1994-09-28 | 1996-04-03 | Matsushita Electric Industrial Co., Ltd. | Optical module having a vertical-cavity surface-emitting laser |
US20030013217A1 (en) * | 2001-06-29 | 2003-01-16 | Greg Dudoff | Opto-electronic device integration |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
EP1408559A2 (en) * | 2002-10-07 | 2004-04-14 | Citizen Electronics Co., Ltd. | White light emitting device |
WO2004088760A2 (en) * | 2003-03-28 | 2004-10-14 | Gelcore Llc | Led power package |
WO2004100343A2 (en) * | 2003-05-05 | 2004-11-18 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5027168A (en) * | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
DE69019498T2 (en) * | 1989-12-27 | 1996-02-29 | Nec Corp | Optical semiconductor device. |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US6958093B2 (en) * | 1994-01-27 | 2005-10-25 | Cree, Inc. | Free-standing (Al, Ga, In)N and parting method for forming same |
US5604135A (en) * | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
JP2795627B2 (en) * | 1994-09-28 | 1998-09-10 | 松下電器産業株式会社 | Optical module having vertical cavity surface emitting laser and method of manufacturing the same |
US5631190A (en) * | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
DE19640594B4 (en) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | module |
JPH10294493A (en) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting device |
US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
JP3641122B2 (en) * | 1997-12-26 | 2005-04-20 | ローム株式会社 | Semiconductor light emitting device, semiconductor light emitting module, and manufacturing method thereof |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JP3685633B2 (en) * | 1999-01-22 | 2005-08-24 | 三洋電機株式会社 | Chip-type light emitting device and manufacturing method thereof |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
JP4411695B2 (en) * | 1999-07-28 | 2010-02-10 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP2001102523A (en) * | 1999-09-28 | 2001-04-13 | Sony Corp | Thin-film device and manufacturing method therefor |
US6879014B2 (en) * | 2000-03-20 | 2005-04-12 | Aegis Semiconductor, Inc. | Semitransparent optical detector including a polycrystalline layer and method of making |
JP4908669B2 (en) * | 2000-04-27 | 2012-04-04 | ローム株式会社 | Chip light emitting device |
JP2001345485A (en) * | 2000-06-02 | 2001-12-14 | Toyoda Gosei Co Ltd | Light emitting device |
DE10051242A1 (en) * | 2000-10-17 | 2002-04-25 | Philips Corp Intellectual Pty | Light-emitting device with coated phosphor |
AT410266B (en) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | LIGHT SOURCE WITH A LIGHT-EMITTING ELEMENT |
JP4737842B2 (en) * | 2001-01-30 | 2011-08-03 | 京セラ株式会社 | Manufacturing method of light emitting element storage package |
JP2002314143A (en) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | Light emitting device |
US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US6888167B2 (en) * | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US6747298B2 (en) * | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US7072096B2 (en) * | 2001-12-14 | 2006-07-04 | Digital Optics International, Corporation | Uniform illumination system |
TW549767U (en) * | 2001-12-28 | 2003-08-21 | Veutron Corp | L-type reflection mirror set |
JP4214704B2 (en) * | 2002-03-20 | 2009-01-28 | 日亜化学工業株式会社 | Semiconductor element |
JP4602079B2 (en) | 2002-07-22 | 2010-12-22 | クリー・インコーポレーテッド | LIGHT EMITTING DIODE INCLUDING BARRIER LAYER AND METHOD FOR MANUFACTURING SAME |
JP4309106B2 (en) * | 2002-08-21 | 2009-08-05 | 士郎 酒井 | InGaN-based compound semiconductor light emitting device manufacturing method |
US7264378B2 (en) * | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
CN100352069C (en) * | 2002-11-25 | 2007-11-28 | 松下电器产业株式会社 | LED illumination light source |
US6744196B1 (en) * | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
JP4184858B2 (en) * | 2003-04-10 | 2008-11-19 | 株式会社小松製作所 | Working machine cab |
US7531380B2 (en) * | 2003-04-30 | 2009-05-12 | Cree, Inc. | Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof |
JP4138586B2 (en) * | 2003-06-13 | 2008-08-27 | スタンレー電気株式会社 | LED lamp for light source and vehicle headlamp using the same |
US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
-
2005
- 2005-06-30 JP JP2007520428A patent/JP4996463B2/en active Active
- 2005-06-30 EP EP05769290A patent/EP1774598B1/en active Active
- 2005-06-30 KR KR1020077002238A patent/KR101193740B1/en active IP Right Grant
- 2005-06-30 US US11/171,893 patent/US7329905B2/en active Active
- 2005-06-30 AT AT05769290T patent/ATE524839T1/en not_active IP Right Cessation
- 2005-06-30 CN CNA2005800285382A patent/CN101032034A/en active Pending
- 2005-06-30 WO PCT/US2005/023755 patent/WO2006005062A2/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0704947A1 (en) * | 1994-09-28 | 1996-04-03 | Matsushita Electric Industrial Co., Ltd. | Optical module having a vertical-cavity surface-emitting laser |
US20030013217A1 (en) * | 2001-06-29 | 2003-01-16 | Greg Dudoff | Opto-electronic device integration |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
EP1408559A2 (en) * | 2002-10-07 | 2004-04-14 | Citizen Electronics Co., Ltd. | White light emitting device |
WO2004088760A2 (en) * | 2003-03-28 | 2004-10-14 | Gelcore Llc | Led power package |
WO2004100343A2 (en) * | 2003-05-05 | 2004-11-18 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
Also Published As
Publication number | Publication date |
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KR20070041729A (en) | 2007-04-19 |
JP2008505508A (en) | 2008-02-21 |
US7329905B2 (en) | 2008-02-12 |
ATE524839T1 (en) | 2011-09-15 |
CN101032034A (en) | 2007-09-05 |
EP1774598A2 (en) | 2007-04-18 |
WO2006005062A2 (en) | 2006-01-12 |
JP4996463B2 (en) | 2012-08-08 |
KR101193740B1 (en) | 2012-10-22 |
US20060006404A1 (en) | 2006-01-12 |
EP1774598B1 (en) | 2011-09-14 |
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