WO2006007196A3 - Nanotube-based transfer devices and related circuits - Google Patents
Nanotube-based transfer devices and related circuits Download PDFInfo
- Publication number
- WO2006007196A3 WO2006007196A3 PCT/US2005/018466 US2005018466W WO2006007196A3 WO 2006007196 A3 WO2006007196 A3 WO 2006007196A3 US 2005018466 W US2005018466 W US 2005018466W WO 2006007196 A3 WO2006007196 A3 WO 2006007196A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nanotube
- node
- circuits
- transfer devices
- control structure
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2570304A CA2570304C (en) | 2004-06-18 | 2005-05-26 | Nanotube-based transfer devices and related circuits |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58079904P | 2004-06-18 | 2004-06-18 | |
US60/580,799 | 2004-06-18 | ||
US11/033,087 US7652342B2 (en) | 2004-06-18 | 2005-01-10 | Nanotube-based transfer devices and related circuits |
US11/033,087 | 2005-01-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006007196A2 WO2006007196A2 (en) | 2006-01-19 |
WO2006007196A3 true WO2006007196A3 (en) | 2007-07-12 |
Family
ID=35479691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/018466 WO2006007196A2 (en) | 2004-06-18 | 2005-05-26 | Nanotube-based transfer devices and related circuits |
Country Status (4)
Country | Link |
---|---|
US (1) | US7652342B2 (en) |
CA (1) | CA2570304C (en) |
TW (1) | TWI305049B (en) |
WO (1) | WO2006007196A2 (en) |
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US9209246B2 (en) | 2007-04-12 | 2015-12-08 | The Penn State University | Accumulation field effect microelectronic device and process for the formation thereof |
US8569834B2 (en) * | 2007-04-12 | 2013-10-29 | The Penn State Research Foundation | Accumulation field effect microelectronic device and process for the formation thereof |
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US8435798B2 (en) | 2010-01-13 | 2013-05-07 | California Institute Of Technology | Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices |
US8693242B2 (en) * | 2012-02-16 | 2014-04-08 | Elwha Llc | Nanotube based nanoelectromechanical device |
US8786018B2 (en) * | 2012-09-11 | 2014-07-22 | International Business Machines Corporation | Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition |
CN105810734B (en) * | 2014-12-29 | 2018-09-11 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and its manufacturing method |
CN105810750B (en) * | 2014-12-29 | 2019-02-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of carbon nanotube neuron chip and preparation method thereof |
CN105990414A (en) * | 2015-02-06 | 2016-10-05 | 联华电子股份有限公司 | Semiconductor structure and manufacturing method thereof |
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- 2005-05-26 WO PCT/US2005/018466 patent/WO2006007196A2/en active Application Filing
- 2005-06-17 TW TW094120088A patent/TWI305049B/en not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
WO2006007196A2 (en) | 2006-01-19 |
US20050279988A1 (en) | 2005-12-22 |
CA2570304C (en) | 2011-09-20 |
CA2570304A1 (en) | 2006-01-19 |
TW200625622A (en) | 2006-07-16 |
US7652342B2 (en) | 2010-01-26 |
TWI305049B (en) | 2009-01-01 |
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