WO2006007196A3 - Nanotube-based transfer devices and related circuits - Google Patents

Nanotube-based transfer devices and related circuits Download PDF

Info

Publication number
WO2006007196A3
WO2006007196A3 PCT/US2005/018466 US2005018466W WO2006007196A3 WO 2006007196 A3 WO2006007196 A3 WO 2006007196A3 US 2005018466 W US2005018466 W US 2005018466W WO 2006007196 A3 WO2006007196 A3 WO 2006007196A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanotube
node
circuits
transfer devices
control structure
Prior art date
Application number
PCT/US2005/018466
Other languages
French (fr)
Other versions
WO2006007196A2 (en
Inventor
Claude L Bertin
Original Assignee
Nantero Inc
Claude L Bertin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc, Claude L Bertin filed Critical Nantero Inc
Priority to CA2570304A priority Critical patent/CA2570304C/en
Publication of WO2006007196A2 publication Critical patent/WO2006007196A2/en
Publication of WO2006007196A3 publication Critical patent/WO2006007196A3/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221Carbon nanotubes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Abstract

Nanotube transfer devices controllably form a nanotube-based electrically conductive channel between a first node and a second node under the control of a control structure. A control structure induces a nanotube channel element to deflect so as to form and unform the conductive channel between the nodes. The nanotube channel element is not in permanent electrical contact with either the first node or the second node. The nanotube channel element may have a floating potential in certain states of the device. Each output node may be connected to an arbitrary network of electrical components. The nanotube transfer device may be volatile or non-volatile. In preferred embodiments, the nanotube transfer device is a three-terminal device or a four-terminal device. Electrical circuits are provided that ensure proper switching of nanotube transfer devices interconnected with arbitrary circuits. The circuits may overdrive the control structure to induce the desired state of channel information.
PCT/US2005/018466 2004-06-18 2005-05-26 Nanotube-based transfer devices and related circuits WO2006007196A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA2570304A CA2570304C (en) 2004-06-18 2005-05-26 Nanotube-based transfer devices and related circuits

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US58079904P 2004-06-18 2004-06-18
US60/580,799 2004-06-18
US11/033,087 US7652342B2 (en) 2004-06-18 2005-01-10 Nanotube-based transfer devices and related circuits
US11/033,087 2005-01-10

Publications (2)

Publication Number Publication Date
WO2006007196A2 WO2006007196A2 (en) 2006-01-19
WO2006007196A3 true WO2006007196A3 (en) 2007-07-12

Family

ID=35479691

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/018466 WO2006007196A2 (en) 2004-06-18 2005-05-26 Nanotube-based transfer devices and related circuits

Country Status (4)

Country Link
US (1) US7652342B2 (en)
CA (1) CA2570304C (en)
TW (1) TWI305049B (en)
WO (1) WO2006007196A2 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7858185B2 (en) 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
EP1665278A4 (en) * 2003-08-13 2007-11-07 Nantero Inc Nanotube-based switching elements with multiple controls and circuits made from same
US7375369B2 (en) 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7504051B2 (en) 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
US7658869B2 (en) 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7556746B2 (en) * 2004-06-03 2009-07-07 Nantero, Inc. Method of making an applicator liquid for electronics fabrication process
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
WO2006121461A2 (en) 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
WO2006065937A2 (en) 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
TWI324773B (en) 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7446044B2 (en) * 2005-09-19 2008-11-04 California Institute Of Technology Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
KR100723412B1 (en) * 2005-11-10 2007-05-30 삼성전자주식회사 Nonvolatile Memory Device using Nanotube
US7655548B2 (en) * 2005-11-23 2010-02-02 Lsi Corporation Programmable power management using a nanotube structure
KR100707212B1 (en) * 2006-03-08 2007-04-13 삼성전자주식회사 Nanowire memory device and method of manufacturing the same
US7888753B2 (en) * 2006-07-31 2011-02-15 International Business Machines Corporation Ultra-sensitive detection techniques
US8945970B2 (en) * 2006-09-22 2015-02-03 Carnegie Mellon University Assembling and applying nano-electro-mechanical systems
KR100799722B1 (en) * 2006-12-12 2008-02-01 삼성전자주식회사 Memory device and method for manufacturing the same
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
KR100814390B1 (en) * 2007-02-15 2008-03-18 삼성전자주식회사 Memory device and method for manufacturing the same
KR100850273B1 (en) * 2007-03-08 2008-08-04 삼성전자주식회사 Multi-bit electro-mechanical memory device and method manufacturing the same
US9209246B2 (en) 2007-04-12 2015-12-08 The Penn State University Accumulation field effect microelectronic device and process for the formation thereof
US8569834B2 (en) * 2007-04-12 2013-10-29 The Penn State Research Foundation Accumulation field effect microelectronic device and process for the formation thereof
KR100876948B1 (en) * 2007-05-23 2009-01-09 삼성전자주식회사 Multi-bit electro-mechanical memory device and method manufacturing the same
KR100876088B1 (en) * 2007-05-23 2008-12-26 삼성전자주식회사 Multi-bit electromechanical memory device and manufacturing method thereof
US8435798B2 (en) 2010-01-13 2013-05-07 California Institute Of Technology Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices
US8693242B2 (en) * 2012-02-16 2014-04-08 Elwha Llc Nanotube based nanoelectromechanical device
US8786018B2 (en) * 2012-09-11 2014-07-22 International Business Machines Corporation Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition
CN105810734B (en) * 2014-12-29 2018-09-11 中芯国际集成电路制造(上海)有限公司 Semiconductor device and its manufacturing method
CN105810750B (en) * 2014-12-29 2019-02-01 中芯国际集成电路制造(上海)有限公司 A kind of carbon nanotube neuron chip and preparation method thereof
CN105990414A (en) * 2015-02-06 2016-10-05 联华电子股份有限公司 Semiconductor structure and manufacturing method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020050882A1 (en) * 2000-10-27 2002-05-02 Hyman Daniel J. Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism
US20020097136A1 (en) * 2000-12-31 2002-07-25 Coleman Donald J. Micromechanical memory element
US6426687B1 (en) * 2001-05-22 2002-07-30 The Aerospace Corporation RF MEMS switch
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US20030022428A1 (en) * 2001-07-25 2003-01-30 Segal Brent M. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6713695B2 (en) * 2002-03-06 2004-03-30 Murata Manufacturing Co., Ltd. RF microelectromechanical systems device
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US6969651B1 (en) * 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications

Family Cites Families (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2930168B2 (en) 1992-10-09 1999-08-03 シャープ株式会社 Driving method of ferroelectric memory device
US5682345A (en) 1995-07-28 1997-10-28 Micron Quantum Devices, Inc. Non-volatile data storage unit method of controlling same
US5818748A (en) 1995-11-21 1998-10-06 International Business Machines Corporation Chip function separation onto separate stacked chips
US6809462B2 (en) 2000-04-05 2004-10-26 Sri International Electroactive polymer sensors
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
US6011744A (en) 1997-07-16 2000-01-04 Altera Corporation Programmable logic device with multi-port memory
ATA119098A (en) 1998-07-09 1999-05-15 Ims Ionen Mikrofab Syst METHOD FOR PRODUCING A CARBON FILM ON A SUBSTRATE
US6097241A (en) 1998-07-21 2000-08-01 International Business Machines Corporation ASIC low power activity detector to change threshold voltage
US6097243A (en) 1998-07-21 2000-08-01 International Business Machines Corporation Device and method to reduce power consumption in integrated semiconductor devices using a low power groggy mode
US6346189B1 (en) 1998-08-14 2002-02-12 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube structures made using catalyst islands
US7416699B2 (en) 1998-08-14 2008-08-26 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube devices
US6232706B1 (en) * 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
US6472705B1 (en) * 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic
US6518156B1 (en) * 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US7030408B1 (en) * 1999-03-29 2006-04-18 Hewlett-Packard Development Company, L.P. Molecular wire transistor (MWT)
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6345362B1 (en) 1999-04-06 2002-02-05 International Business Machines Corporation Managing Vt for reduced power using a status table
DE60044972D1 (en) 1999-07-02 2010-10-28 Harvard College NANOSCOPIC WIRE CONTAINING ARRANGEMENT, LOGISC
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
ATE402407T1 (en) 1999-12-15 2008-08-15 Univ Leland Stanford Junior CARBON NANOTUBE DEVICE
US6346846B1 (en) 1999-12-17 2002-02-12 International Business Machines Corporation Methods and apparatus for blowing and sensing antifuses
JP3572329B2 (en) 1999-12-22 2004-09-29 エルピーダメモリ株式会社 A data latch circuit and an operation method of the data latch circuit.
US6625740B1 (en) 2000-01-13 2003-09-23 Cirrus Logic, Inc. Dynamically activating and deactivating selected circuit blocks of a data processing integrated circuit during execution of instructions according to power code bits appended to selected instructions
US7335603B2 (en) * 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
DE10024939A1 (en) * 2000-05-19 2001-11-29 Bayer Ag New diphenylmethane derivatives for pharmaceuticals
EP1170799A3 (en) 2000-07-04 2009-04-01 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
DE10134866B4 (en) * 2000-07-18 2005-08-11 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the process grown carbon nanotubes
US6495905B2 (en) * 2000-11-09 2002-12-17 Texas Instruments Incorporated Nanomechanical switches and circuits
JP3587248B2 (en) 2000-12-20 2004-11-10 日本電気株式会社 Scan flip-flops
US6423583B1 (en) 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
WO2002079514A1 (en) * 2001-01-10 2002-10-10 The Trustees Of Boston College Dna-bridged carbon nanotube arrays
US6373771B1 (en) 2001-01-17 2002-04-16 International Business Machines Corporation Integrated fuse latch and shift register for efficient programming and fuse readout
US6803840B2 (en) 2001-03-30 2004-10-12 California Institute Of Technology Pattern-aligned carbon nanotube growth and tunable resonator apparatus
AU2002307129A1 (en) * 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
US6673424B1 (en) * 2001-06-19 2004-01-06 Arizona Board Of Regents Devices based on molecular electronics
JP2003017074A (en) 2001-07-02 2003-01-17 Honda Motor Co Ltd Fuel cell
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6703926B2 (en) * 2001-11-08 2004-03-09 Yazaki North America Vehicle data communication system with hand-held wireless control and display unit
US6784028B2 (en) * 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
AU2003216070A1 (en) 2002-01-18 2003-09-02 California Institute Of Technology Array-based architecture for molecular electronics
EP1341184B1 (en) 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Memory device utilizing carbon nanotubes and method of fabricating the memory device
US6889216B2 (en) 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US7049625B2 (en) * 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6760245B2 (en) 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
US6794914B2 (en) 2002-05-24 2004-09-21 Qualcomm Incorporated Non-volatile multi-threshold CMOS latch with leakage control
US6759693B2 (en) * 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
US6774052B2 (en) * 2002-06-19 2004-08-10 Nantero, Inc. Method of making nanotube permeable base transistor
TWI282092B (en) 2002-06-28 2007-06-01 Brilliance Semiconductor Inc Nonvolatile static random access memory cell
JP4338948B2 (en) 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 Method for producing carbon nanotube semiconductor device
US6809465B2 (en) * 2002-08-23 2004-10-26 Samsung Electronics Co., Ltd. Article comprising MEMS-based two-dimensional e-beam sources and method for making the same
JP4547852B2 (en) 2002-09-04 2010-09-22 富士ゼロックス株式会社 Manufacturing method of electrical parts
JP3906139B2 (en) 2002-10-16 2007-04-18 株式会社東芝 Magnetic random access memory
US20040077107A1 (en) 2002-10-17 2004-04-22 Nantero, Inc. Method of making nanoscopic tunnel
US20040087162A1 (en) 2002-10-17 2004-05-06 Nantero, Inc. Metal sacrificial layer
US20040075159A1 (en) 2002-10-17 2004-04-22 Nantero, Inc. Nanoscopic tunnel
WO2004051219A2 (en) 2002-11-27 2004-06-17 Molecular Nanosystems, Inc. Nanotube chemical sensor based on work function of electrodes
CA2512387A1 (en) 2003-01-13 2004-08-05 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7858185B2 (en) 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
EP1583853A4 (en) 2003-01-13 2006-12-20 Nantero Inc Carbon nanotube films, layers, fabrics, ribbons, elements and articles
AU2003210495A1 (en) 2003-01-13 2004-08-13 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6919740B2 (en) 2003-01-31 2005-07-19 Hewlett-Packard Development Company, Lp. Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits
US6918284B2 (en) 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US7075141B2 (en) 2003-03-28 2006-07-11 Nantero, Inc. Four terminal non-volatile transistor device
US7113426B2 (en) 2003-03-28 2006-09-26 Nantero, Inc. Non-volatile RAM cell and array using nanotube switch position for information state
US6944054B2 (en) 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
US7045421B2 (en) 2003-04-22 2006-05-16 Nantero, Inc. Process for making bit selectable devices having elements made with nanotubes
US6995046B2 (en) 2003-04-22 2006-02-07 Nantero, Inc. Process for making byte erasable devices having elements made with nanotubes
WO2005019793A2 (en) * 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7274064B2 (en) 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7280394B2 (en) 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
US6882256B1 (en) * 2003-06-20 2005-04-19 Northrop Grumman Corporation Anchorless electrostatically activated micro electromechanical system switch
EP1665278A4 (en) * 2003-08-13 2007-11-07 Nantero Inc Nanotube-based switching elements with multiple controls and circuits made from same
US7289357B2 (en) * 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7504051B2 (en) 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
US7375369B2 (en) 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US20050052894A1 (en) 2003-09-09 2005-03-10 Nantero, Inc. Uses of nanofabric-based electro-mechanical switches
KR100545212B1 (en) 2003-12-26 2006-01-24 동부아남반도체 주식회사 Non-volatile memory device with oxide stack and non-volatile SRAM using the same
KR100580292B1 (en) 2003-12-31 2006-05-15 동부일렉트로닉스 주식회사 Non-volatile memory device
KR100599106B1 (en) 2003-12-31 2006-07-12 동부일렉트로닉스 주식회사 Non-volatile memory device and method for fabricating the same
KR100620218B1 (en) 2003-12-31 2006-09-11 동부일렉트로닉스 주식회사 Semiconductor device
US7528437B2 (en) 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US7658869B2 (en) * 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7164744B2 (en) * 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7329931B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US6955937B1 (en) 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
US7567414B2 (en) * 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
WO2006065937A2 (en) * 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US20060276056A1 (en) * 2005-04-05 2006-12-07 Nantero, Inc. Nanotube articles with adjustable electrical conductivity and methods of making the same
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US20020050882A1 (en) * 2000-10-27 2002-05-02 Hyman Daniel J. Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism
US20020097136A1 (en) * 2000-12-31 2002-07-25 Coleman Donald J. Micromechanical memory element
US6426687B1 (en) * 2001-05-22 2002-07-30 The Aerospace Corporation RF MEMS switch
US20030022428A1 (en) * 2001-07-25 2003-01-30 Segal Brent M. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6713695B2 (en) * 2002-03-06 2004-03-30 Murata Manufacturing Co., Ltd. RF microelectromechanical systems device
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US6969651B1 (en) * 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications

Also Published As

Publication number Publication date
WO2006007196A2 (en) 2006-01-19
US20050279988A1 (en) 2005-12-22
CA2570304C (en) 2011-09-20
CA2570304A1 (en) 2006-01-19
TW200625622A (en) 2006-07-16
US7652342B2 (en) 2010-01-26
TWI305049B (en) 2009-01-01

Similar Documents

Publication Publication Date Title
WO2006007196A3 (en) Nanotube-based transfer devices and related circuits
WO2005048296A3 (en) Nanotube-based switching elements with multiple controls and circuits made from same
WO2006033681A3 (en) Receiver circuit using nanotube-based switches and logic
WO2006033683A3 (en) Receiver circuit using nanotube-based switches and transistors
WO2005084164A3 (en) Nanotube-based switching elements and logic circuits
TW200739580A (en) Nonvolatile semiconductor memory device
WO2005001899A3 (en) Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
WO2008021911A3 (en) Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
WO2004081977A3 (en) Multi-terminal chalcogenide switching devices
ATE339765T1 (en) MOLECULAR-BASED VOLATILE AND NON-VOLATILE SWITCHING ELEMENTS
JP2005196738A5 (en)
TW200729455A (en) Memory cell comprising nickel-cobalt oxide switching element
EP1880420A4 (en) Two-terminal nanotube devices and systems and methods of making same
KR100707901B1 (en) Control circuit and reconfigurable logic block
ATE377830T1 (en) ACCESS TO PHASE CHANGE MEMORY
ATE472157T1 (en) NON-VOLATILE PROGRAMMABLE MEMORY
WO2003058652A3 (en) Electromechanical three-trace junction devices
JP2000286387A5 (en)
EP1594176A4 (en) Switching device
WO2004100217A3 (en) Field effect chalcogenide devices
WO2009063542A1 (en) Semiconductor device
JP2001076484A5 (en)
TW200643887A (en) Sample-hold circuit and semiconductor device
WO2004070566A3 (en) Conductive-polymer electronic switch
KR970076815A (en) Single electronic memory cell device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2570304

Country of ref document: CA

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase