WO2006008746A3 - Integrated active pixel sensor and method of its fabrication - Google Patents

Integrated active pixel sensor and method of its fabrication Download PDF

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Publication number
WO2006008746A3
WO2006008746A3 PCT/IL2005/000779 IL2005000779W WO2006008746A3 WO 2006008746 A3 WO2006008746 A3 WO 2006008746A3 IL 2005000779 W IL2005000779 W IL 2005000779W WO 2006008746 A3 WO2006008746 A3 WO 2006008746A3
Authority
WO
WIPO (PCT)
Prior art keywords
active pixel
pixel sensor
fabrication
integrated active
silicon
Prior art date
Application number
PCT/IL2005/000779
Other languages
French (fr)
Other versions
WO2006008746A2 (en
Inventor
Ar Amir Sa
Joseph Shappir
Original Assignee
Yissum Res Dev Co
Ar Amir Sa
Joseph Shappir
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yissum Res Dev Co, Ar Amir Sa, Joseph Shappir filed Critical Yissum Res Dev Co
Publication of WO2006008746A2 publication Critical patent/WO2006008746A2/en
Publication of WO2006008746A3 publication Critical patent/WO2006008746A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

An active pixel sensor and a method of its manufacture are provided. The sensor comprises a silicon substrate patterned to form a photodetctor arrangement therein, and a silicon-on-insulator (SOI) layer structure on the substrate, the silicon layer of the SOI layer structure carrying an electronics circuit vertically integrated with said photodetector arrangement for processing output thereof.
PCT/IL2005/000779 2004-07-22 2005-07-21 Integrated active pixel sensor and method of its fabrication WO2006008746A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58979404P 2004-07-22 2004-07-22
US60/589,794 2004-07-22

Publications (2)

Publication Number Publication Date
WO2006008746A2 WO2006008746A2 (en) 2006-01-26
WO2006008746A3 true WO2006008746A3 (en) 2006-06-01

Family

ID=35584207

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2005/000779 WO2006008746A2 (en) 2004-07-22 2005-07-21 Integrated active pixel sensor and method of its fabrication

Country Status (1)

Country Link
WO (1) WO2006008746A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007007584A1 (en) * 2006-12-29 2008-07-03 Osram Opto Semiconductors Gmbh Semiconductor detector arrangement for use as back-illuminated multipin-photo detectors or charge coupled devices sensors, has multiple regions of semiconductor substrate spatial assigned to semiconductor structures
AT507468B1 (en) * 2008-10-15 2010-10-15 Dtg Int Gmbh DETERMINATION OF CHARACTERISTICS OF AN ELECTRICAL DEVICE
US8063424B2 (en) * 2009-11-16 2011-11-22 International Business Machines Corporation Embedded photodetector apparatus in a 3D CMOS chip stack
CN109904181B (en) * 2019-02-22 2022-09-02 上海集成电路研发中心有限公司 CMOS imaging sensor with high filling factor and manufacturing method thereof
CN111029357B (en) * 2019-12-24 2020-08-25 湖北三维半导体集成制造创新中心有限责任公司 Semiconductor structure and preparation method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933731A (en) * 1987-08-27 1990-06-12 Mitsubishi Denki Kabushiki Kaisha Superlattice imaging device
US5043582A (en) * 1985-12-11 1991-08-27 General Imagining Corporation X-ray imaging system and solid state detector therefor
US5324678A (en) * 1989-09-22 1994-06-28 Mitsubishi Denki Kabushiki Kaisha Method of forming a multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
EP0825651A2 (en) * 1996-08-09 1998-02-25 Yeda Research And Development Co. Ltd. Monolithically integrated infrared detector circuits
US6258636B1 (en) * 1998-01-08 2001-07-10 International Business Machines Corporation SOI active pixel cell design with grounded body contact
US20020121655A1 (en) * 1998-10-07 2002-09-05 California Institute Of Technology Silicon-on-insulator (SOI) active pixel sensors with the photosites implemented in the substrate
US6495814B1 (en) * 1999-04-28 2002-12-17 Denso Corporation Photo sensor with signal processing circuit

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043582A (en) * 1985-12-11 1991-08-27 General Imagining Corporation X-ray imaging system and solid state detector therefor
US4933731A (en) * 1987-08-27 1990-06-12 Mitsubishi Denki Kabushiki Kaisha Superlattice imaging device
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US5324678A (en) * 1989-09-22 1994-06-28 Mitsubishi Denki Kabushiki Kaisha Method of forming a multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions
EP0825651A2 (en) * 1996-08-09 1998-02-25 Yeda Research And Development Co. Ltd. Monolithically integrated infrared detector circuits
US6258636B1 (en) * 1998-01-08 2001-07-10 International Business Machines Corporation SOI active pixel cell design with grounded body contact
US20020121655A1 (en) * 1998-10-07 2002-09-05 California Institute Of Technology Silicon-on-insulator (SOI) active pixel sensors with the photosites implemented in the substrate
US6495814B1 (en) * 1999-04-28 2002-12-17 Denso Corporation Photo sensor with signal processing circuit

Also Published As

Publication number Publication date
WO2006008746A2 (en) 2006-01-26

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