WO2006014082A1 - Thermal oxide formation apparatus and the method by chemical vapor deposition in wafer - Google Patents
Thermal oxide formation apparatus and the method by chemical vapor deposition in wafer Download PDFInfo
- Publication number
- WO2006014082A1 WO2006014082A1 PCT/KR2005/002539 KR2005002539W WO2006014082A1 WO 2006014082 A1 WO2006014082 A1 WO 2006014082A1 KR 2005002539 W KR2005002539 W KR 2005002539W WO 2006014082 A1 WO2006014082 A1 WO 2006014082A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- teos
- chamber
- oxide film
- storage unit
- Prior art date
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 54
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000007789 gas Substances 0.000 claims abstract description 93
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 51
- 238000000151 deposition Methods 0.000 claims abstract description 40
- 239000012495 reaction gas Substances 0.000 claims abstract description 29
- 239000012159 carrier gas Substances 0.000 claims abstract description 24
- 238000003860 storage Methods 0.000 claims abstract description 23
- 239000006200 vaporizer Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims abstract description 4
- 230000008016 vaporization Effects 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims description 37
- 230000004907 flux Effects 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000006227 byproduct Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000197 pyrolysis Methods 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 51
- 230000008021 deposition Effects 0.000 description 25
- 230000008859 change Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 241000905957 Channa melasoma Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Definitions
- the present invention relates to an apparatus for depositing a thermal oxide film on a semiconductor substrate using single chamber chemical vapor deposition and a method thereof, and more particularly to, an apparatus for depositing a thermal oxide film on a semiconductor substrate using single chamber chemical vapor deposition and a method thereof, in which an apparatus for manufacturing a thermal oxide film and conditions under which the thermal oxide film is deposited using TEOS gas are provided in processes of depositing the thermal oxide film where it is necessary that pattern regions have uniform thickness in a state where step differences are formed so that the thickness of the pattern regions are uniform in processes where devices are highly integrated and metal wiring lines are used.
- pattern regions such as a device isolation barrier, an interlayer insulating film, a conductive film, and a contact are formed on a semiconductor substrate to complete a semiconductor device.
- the device isolation barrier is formed of oxide film by a local oxidation of silicon
- the interlayer insulating film is formed of a silicon oxide film such as phosphorus silicon glass (PSG), boron phosphorus silicon glass (BPSG), and undoped silicon glass (USG) or a nitride film such as SixNy.
- the conductive film and the contact are formed of polycrystalline silicon with conductivity, silicide, or metal. Disclosure of Invention Technical Problem
- the most important factors in forming the oxide film are reaction source gas and equipment.
- a bell-type furnace is commonly used for forming the oxide film.
- high temperature and long time are required and metal wiring lines formed under the oxide film are transformed due to excessive exposure to heat so that electrical characteristic deteriorates and implanted impurities are re-diffused and that the thickness of the thermal oxide film becomes non-uniform due to difference in partial pressure of gas between regions of the same wafer or between wafers in large capacity wafer processes. Therefore, difference in threshold voltage is caused in a spacer process of a transistor process so that the electrical characteristic of a device de ⁇ teriorates.
- the bell-type furnace is used.
- the concentration of the source gas used when forming the oxide film becomes non ⁇ uniform due to the large capacity wafer processes so that difference in the thickness of the oxide film is generated between the regions of the wafer and between the wafers. Therefore, process reproducibility deteriorates and vulnerability increases according as high integration is performed.
- a low temperature oxide film process using the TEOS gas and ozone gas is commonly used.
- the low temperature oxide film process is performed at the temperature of 300 to 500C, which is a process condition that cannot be applied to the oxide film deposition process in which it is necessary that the thickness of the patterns is uniform in the state where the step differences are formed likein the plasma enhanced CVD type since the deposition characteristic (such as the loading effect and the step coverage) efficiencydeteriorates.
- an object of the present invention to provide an apparatus for depositing a thermal oxide film on a semiconductor substrate using single chamber chemical vapor deposition and a method thereof, in which an apparatus for manu ⁇ facturing a thermal oxide film and conditions under which the thermal oxide film is deposited using TEOS gas are provided in processes of depositing the thermal oxide film where deposition condition (such as loading effect and step coverage) efficiency dependent on the influence of patterns is required and it is necessary that pattern regions have uniform thickness in a state where step differences are formed so that the thickness of the pattern regions are uniform in processes where devices are highly integrated and metal wiring lines are used.
- deposition condition such as loading effect and step coverage
- an apparatus for depositing a thermal oxide film on a semiconductor substrate using single chamber chemical vapor deposition having a chamber that includes a gas inlet line to which a reaction gas flows, a shower head for spraying the received reaction gas, a heater in which a wafer is settled, a heater supporting unit for supporting the heater, and a vacuum port for exhausting the reaction gas.
- the apparatus comprises a TEOS gas storage unit connected to the gas inlet line to supply TEOS gas to the chamber, a controller for controlling the TEOS gas stored in theTEOS gas storage unit to be supplied by a predetermined amount when required and to be maintained at pre ⁇ determined temperature, a vaporizer for vaporizing the TEOS gas supplied from the TEOS gas storage unit to be no less than predetermined temperature, a carrier gas storage unit connected to the outlet of the vaporizer to supply an inert gas to the chamber together with the vaporized TEOS gas, and a second reaction gas storage unit connected to the inlet of the chamber to supply O2 gas that is a second reaction gas.
- the apparatus for manufacturing the thermal oxide film and the conditions under which the thermal oxide film is deposited using the TEOS gas are provided in the processes of depositing the thermal oxide film where it is necessary that the pattern regions have uniform thickness in the state where the step differences are formed so that the thickness of the pattern regions are uniform in the processes where the devices are highly integrated and the metal wiring lines are used.
- FIG. 1 schematically illustrates the structure of a chamber according to the present invention
- FIG. 2 illustrates the structure of an apparatus according to the present invention
- FIG. 3 is a graph illustrating deposition speed in accordance with change in flux of
- FIG. 4 is a graph illustrating deposition speed in accordance with change in pressure in the chamber according to the present invention.
- FIG. 5 is a graph illustrating deposition speed of an oxide film in accordance with change in process temperature according to the present invention
- FlG. 6 is a graph illustrating deposition speed in accordance with change in the amount ofhelium used as a carrier gas when liquid TEOS gas is vaporized in a vaporizer according to the present invention.
- FIG. 7 is a graph illustrating deposition speed of an oxide film in accordance with change in distance according to the present invention.
- FIG. 1 schematically illustrates the structure of a chamber according to the present invention.
- FIG. 2 illustrates the structure of an apparatus according to the present invention.
- FIG. 3 is a graph illustrating deposition speed in accordance with change in flux of TEOS gas according to the present invention.
- FIG. 4 is a graph illustrating deposition speed in accordance with change in pressure in the chamber according to the present invention.
- FIG. 5 is a graph illustrating deposition speed of an oxide film in accordance with change in process temperature according to the present invention.
- Reference numeral 100 denotes a thermal oxide film depositing apparatus according to the present invention.
- a single chamber thermal oxide film depositing apparatus having a chamber 1 that includes a gas inlet line 2 to whicha reaction gas flows, a shower head 3 for spraying the received reaction gas, a heater 4 in which a wafer 5 is settled, a heater supporting unit 6 for supporting the heater 4, and a vacuum port 7 for exhausting the reaction gas
- a TEOS gas storage unit 110 connected to the gas inlet line 2 to supply TEOS gas to the chamber 1
- a controller 120 for controlling the TEOS gas stored in the TEOS gas storage unit 110 to be supplied by a predetermined amount when required and to be maintained at predetermined temperature
- a vaporizer 130 for vaporizing the TEOS gas supplied from theTEOS gas storage unit 110 to be no less than predetermined temperature
- a carrier gas storage unit 140 connected to the outlet of the vaporizer 130 to supply an inert gas to thechamber 1 together with the vaporized TEOS gas
- a second reaction gas storage unit 150 connected to the inlet of the chamber 1 to supply
- the gas storage units are tanks having valves whose operations are controlled by the controller 120.
- the controller 120 controls the operation of the apparatus by a control panel that determines the supply times and amounts of the gases and the temperatures of the gases and a control device that has logic and circuit structure by the manipulation of the control panel in accordance with the determined values.
- the vaporizer 130 vaporizes liquid material to have predetermined temperature.
- He Helium
- N nitrogen
- Ar argon
- the O2 gas stored in the second reaction gas storage unit 150 reacts to carbon that is a byproduct of the TEOS gas that is an organic compoundto form CO2 so that it is possible to prevent carbon contamination that deteriorates electrical characteristic and that increases film stress.
- the reaction speed and the deposition characteristics are determined by the flux of the TEOS gas that is a first reaction gas, the flux of the inert carrier gas, the process temperature, and the process pressure. According to the present invention, proper process conditions are selected among the above conditions, which will be described hereinafter.
- the TEOS gas is used as the first reaction gas for forming the oxide film
- the helium (He) gas is used as the carrier gas that determines the partial pressure of the vaporized gas in order to supply the vaporized gas by a uniform amount
- the O2 gas is used as the second reaction gas that reacts to carbon that is the byproduct of the TEOS gas to form CO2 and to thus prevent carbon contamination that deteriorates the electrical characteristic and that increases the film stress.
- the above gases are sprayed into the chamber 1 so that the thermal oxide film is formed by pyrolysis.
- the amount of liquid TEOS is 100 to 10,000 mgram and the amount of vaporized
- TEOS is 10 to 1,000 SCCM.
- the amount of the helium (He) gas that is the carrier gas is 100 to 5,000 SCCM.
- the amount of the O2 gas that is the second reaction gas is 0 to 500 SCCM.
- the process temperature that is, the pyrolysis temperature in the chamber 1 is
- the process pressure that is, the pressure in the chamber 1 is 5 to 200 Torr.
- the distance between the shower head 3 and the wafer 5 is 10 to 30 mm.
- helium He
- nitrogen N
- Argon Ar
- the carrier gas 100 to 5,000 SCCM.
- FIG. 3 illustrates the deposition speed in accordance with change in the flux of the TEOS gas.
- the flux of the TEOS gas that is required for forming the oxide film increases, the thin film deposition speed linearly increases as illustrated in the graph of FIG. 3.
- FIG. 4 illustrates the deposition speed in accordance with change in the pressure of the chamber under the condition that the amount of the reaction source gas is fixed. According as the process pressure increases, the deposition speed increases. When thedeposition pressure increases, a byproduct is formed so that it is necessary to prevent the generation of particles and to determine proper pressure.
- FIG. 5 illustrates the deposition speed of the oxide film in accordance with change in the process temperature.
- the oxide film deposition speed that is a main process factor that determines the physical char ⁇ acteristic of the deposition film increases.
- FIG. 6 illustrates the deposition speed in accordance with change in the amount of the helium (He) gas used as the carrier gas while liquid TEOS is vaporized by the vaporizer. Liquid TEOS that is vaporized by thevaporizer flows to the reaction chamber together with the carrier gas. The deposition speed of the oxide film is reduced when the concentration of the carrier gas increases.
- He helium
- the amountof the carrier gas is no less than a predetermined level and is determined considering the flux of the TEOS gas.
- FIG. 7 illustrates the deposition speed in accordance with change in the distance between the wafer 5 and the shower head 3 in the single chamber CVD deposition method. According as the distance between the wafer 5 and the shower head 3 increases, the deposition speed increases. This is because the distribution of the re- actiongas increases according as the distance between the shower head 3 and the wafer 5 increases.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040061307A KR20060012703A (en) | 2004-08-04 | 2004-08-04 | Thermal oxide formation apparatus and the method by chemical vapor deposition in wafer |
KR10-2004-0061307 | 2004-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006014082A1 true WO2006014082A1 (en) | 2006-02-09 |
Family
ID=35787344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2005/002539 WO2006014082A1 (en) | 2004-08-04 | 2005-08-04 | Thermal oxide formation apparatus and the method by chemical vapor deposition in wafer |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20060012703A (en) |
CN (1) | CN101027756A (en) |
WO (1) | WO2006014082A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100784406B1 (en) * | 2005-09-21 | 2007-12-11 | 주식회사 유진테크 | Production method for thermal oxide film by CVD apparatus and the apparatus thereof |
CN104275171B (en) * | 2014-06-18 | 2016-07-20 | 河海大学 | A kind of preparation method of the gama-alumina powder body material of silica nanometer layer cladding |
KR20160062964A (en) * | 2014-11-26 | 2016-06-03 | 주식회사 원익아이피에스 | Method and device for fabricating silicon oxide |
CN115676805A (en) * | 2021-07-26 | 2023-02-03 | 北京大学 | Single-walled carbon nanotube horizontal array and preparation method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US6001728A (en) * | 1996-03-15 | 1999-12-14 | Applied Materials, Inc. | Method and apparatus for improving film stability of halogen-doped silicon oxide films |
KR20000017994U (en) * | 1999-03-10 | 2000-10-05 | 황인길 | Apparatus for teos gas delivery line heating in chemical vapor deposition equipment |
US20030138562A1 (en) * | 2001-12-28 | 2003-07-24 | Subramony Janardhanan Anand | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
-
2004
- 2004-08-04 KR KR1020040061307A patent/KR20060012703A/en not_active Application Discontinuation
-
2005
- 2005-08-04 WO PCT/KR2005/002539 patent/WO2006014082A1/en active Application Filing
- 2005-08-04 CN CNA2005800319764A patent/CN101027756A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US6001728A (en) * | 1996-03-15 | 1999-12-14 | Applied Materials, Inc. | Method and apparatus for improving film stability of halogen-doped silicon oxide films |
KR20000017994U (en) * | 1999-03-10 | 2000-10-05 | 황인길 | Apparatus for teos gas delivery line heating in chemical vapor deposition equipment |
US20030138562A1 (en) * | 2001-12-28 | 2003-07-24 | Subramony Janardhanan Anand | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
Also Published As
Publication number | Publication date |
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CN101027756A (en) | 2007-08-29 |
KR20060012703A (en) | 2006-02-09 |
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