WO2006020194A3 - Imprint alignment method, system, and template - Google Patents

Imprint alignment method, system, and template Download PDF

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Publication number
WO2006020194A3
WO2006020194A3 PCT/US2005/025390 US2005025390W WO2006020194A3 WO 2006020194 A3 WO2006020194 A3 WO 2006020194A3 US 2005025390 W US2005025390 W US 2005025390W WO 2006020194 A3 WO2006020194 A3 WO 2006020194A3
Authority
WO
WIPO (PCT)
Prior art keywords
template
features
offset
templates
alignment method
Prior art date
Application number
PCT/US2005/025390
Other languages
French (fr)
Other versions
WO2006020194A2 (en
Inventor
Ronald D Voisin
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Publication of WO2006020194A2 publication Critical patent/WO2006020194A2/en
Publication of WO2006020194A3 publication Critical patent/WO2006020194A3/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/7035Proximity or contact printers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/84Manufacture, treatment, or detection of nanostructure
    • Y10S977/887Nanoimprint lithography, i.e. nanostamp

Abstract

An improved lithographic alignment method, system, and template. The method includes creating, within a lithographic subfield, subsequent-layer features which are intentionally offset from their respective previous-layer features, where the intentional offset may vary in magnitude and direction from one subfield to the next. The system includes an imprint lithographic machine and first and second lithography templates where the templates are adapted to enable the machine to form first and second features, respectively, and where a second feature is configured to be deliberately offset from a corresponding first feature. The template set includes at least two templates, one having features which are deliberately offset from corresponding features of another template. Also, a method of manufacturing such a template set.
PCT/US2005/025390 2004-07-20 2005-07-18 Imprint alignment method, system, and template WO2006020194A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/895,214 US7785526B2 (en) 2004-07-20 2004-07-20 Imprint alignment method, system, and template
US10/895,214 2004-07-20

Publications (2)

Publication Number Publication Date
WO2006020194A2 WO2006020194A2 (en) 2006-02-23
WO2006020194A3 true WO2006020194A3 (en) 2009-04-09

Family

ID=35657589

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/025390 WO2006020194A2 (en) 2004-07-20 2005-07-18 Imprint alignment method, system, and template

Country Status (3)

Country Link
US (2) US7785526B2 (en)
TW (1) TWI283339B (en)
WO (1) WO2006020194A2 (en)

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US7140861B2 (en) * 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
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