WO2006021483A3 - Semiconductor circuit arrangement and method for the production thereof - Google Patents

Semiconductor circuit arrangement and method for the production thereof Download PDF

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Publication number
WO2006021483A3
WO2006021483A3 PCT/EP2005/053779 EP2005053779W WO2006021483A3 WO 2006021483 A3 WO2006021483 A3 WO 2006021483A3 EP 2005053779 W EP2005053779 W EP 2005053779W WO 2006021483 A3 WO2006021483 A3 WO 2006021483A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
circuit arrangement
semiconductor circuit
region
circuit region
Prior art date
Application number
PCT/EP2005/053779
Other languages
German (de)
French (fr)
Other versions
WO2006021483A2 (en
Inventor
Marcus Halik
Christine Dehm
Hagen Klauk
Ute Zschieschang
Guenter Schmid
Original Assignee
Infineon Technologies Ag
Marcus Halik
Christine Dehm
Hagen Klauk
Ute Zschieschang
Guenter Schmid
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Marcus Halik, Christine Dehm, Hagen Klauk, Ute Zschieschang, Guenter Schmid filed Critical Infineon Technologies Ag
Publication of WO2006021483A2 publication Critical patent/WO2006021483A2/en
Publication of WO2006021483A3 publication Critical patent/WO2006021483A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Abstract

The invention relates to a semiconductor circuit arrangement (10) and to a method for the production thereof, in which a protective material region (50) made of poly(para-xylene) is formed for the material separation of a first circuit region (30) and a second circuit region (40).
PCT/EP2005/053779 2004-08-20 2005-08-03 Semiconductor circuit arrangement and method for the production thereof WO2006021483A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004040505A DE102004040505A1 (en) 2004-08-20 2004-08-20 Semiconductor circuit arrangement and method for its production
DE102004040505.0 2004-08-20

Publications (2)

Publication Number Publication Date
WO2006021483A2 WO2006021483A2 (en) 2006-03-02
WO2006021483A3 true WO2006021483A3 (en) 2006-10-05

Family

ID=35745465

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/053779 WO2006021483A2 (en) 2004-08-20 2005-08-03 Semiconductor circuit arrangement and method for the production thereof

Country Status (2)

Country Link
DE (1) DE102004040505A1 (en)
WO (1) WO2006021483A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942374A (en) * 1993-03-25 1999-08-24 Texas Instruments Incorporated Integrated circuits formed in radiation sensitive material and method of forming same
WO2001047045A1 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Solution processing
WO2001080319A2 (en) * 2000-04-14 2001-10-25 Emagin Corporation Improved method of fabrication of color changing medium layers in organic light emitting devices resulting in improved light extraction
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
WO2003019651A2 (en) * 2001-08-24 2003-03-06 Mcnc Research & Development Institute Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
US20040029310A1 (en) * 2000-08-18 2004-02-12 Adoft Bernds Organic field-effect transistor (ofet), a production method therefor, an integrated circut constructed from the same and their uses

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942374A (en) * 1993-03-25 1999-08-24 Texas Instruments Incorporated Integrated circuits formed in radiation sensitive material and method of forming same
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
WO2001047045A1 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Solution processing
WO2001080319A2 (en) * 2000-04-14 2001-10-25 Emagin Corporation Improved method of fabrication of color changing medium layers in organic light emitting devices resulting in improved light extraction
US20040029310A1 (en) * 2000-08-18 2004-02-12 Adoft Bernds Organic field-effect transistor (ofet), a production method therefor, an integrated circut constructed from the same and their uses
WO2003019651A2 (en) * 2001-08-24 2003-03-06 Mcnc Research & Development Institute Through-via vertical interconnects, through-via heat sinks and associated fabrication methods

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HALIK MARCUS ET AL: "Fully patterned all-organic thin film transistors", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 81, no. 2, 8 July 2002 (2002-07-08), pages 289 - 291, XP012032454, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
DE102004040505A1 (en) 2006-03-02
WO2006021483A2 (en) 2006-03-02

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