WO2006026610A3 - LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION - Google Patents
LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION Download PDFInfo
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- WO2006026610A3 WO2006026610A3 PCT/US2005/030819 US2005030819W WO2006026610A3 WO 2006026610 A3 WO2006026610 A3 WO 2006026610A3 US 2005030819 W US2005030819 W US 2005030819W WO 2006026610 A3 WO2006026610 A3 WO 2006026610A3
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- active region
- low temperature
- ingaasn
- adjacent
- based active
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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- H01S2302/00—Amplification / lasing wavelength
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
- H01S5/32366—(In)GaAs with small amount of N
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
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- H01S5/00—Semiconductor lasers
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
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Abstract
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US60581004P | 2004-08-31 | 2004-08-31 | |
US60/605,810 | 2004-08-31 | ||
US11/079,148 US7286585B2 (en) | 1998-12-21 | 2005-03-14 | Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region |
US11/079,148 | 2005-03-14 |
Publications (2)
Publication Number | Publication Date |
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WO2006026610A2 WO2006026610A2 (en) | 2006-03-09 |
WO2006026610A3 true WO2006026610A3 (en) | 2006-07-06 |
Family
ID=36000690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2005/030819 WO2006026610A2 (en) | 2004-08-31 | 2005-08-31 | LOW TEMPERATURE GROWN LAYERS WITH MIGRATION ENHANCED EPITAXY ADJACENT TO AN InGaAsN(Sb) BASED ACTIVE REGION |
Country Status (2)
Country | Link |
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US (1) | US7286585B2 (en) |
WO (1) | WO2006026610A2 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100482511B1 (en) * | 2004-02-05 | 2005-04-14 | 에피밸리 주식회사 | Ⅲ-Nitride compound semiconductor light emitting device |
KR100456063B1 (en) * | 2004-02-13 | 2004-11-10 | 에피밸리 주식회사 | Ⅲ-Nitride compound semiconductor light emitting device |
KR100486177B1 (en) * | 2004-03-25 | 2005-05-06 | 에피밸리 주식회사 | Ⅲ-Nitride Compound Semiconductor Light Emitting Device |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
CN101432936B (en) | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | Vertical cavity surface emitting laser having multiple top-side contacts |
WO2007114325A1 (en) * | 2006-03-31 | 2007-10-11 | Chugai Seiyaku Kabushiki Kaisha | Antibody modification method for purifying bispecific antibody |
JP5267931B2 (en) * | 2008-10-29 | 2013-08-21 | 独立行政法人理化学研究所 | Photocathode semiconductor device |
JP2014508425A (en) * | 2011-03-17 | 2014-04-03 | フィニサー コーポレイション | Laser with reduced traps comprising a quantum well with high indium and low aluminum and a barrier layer with high aluminum and low indium |
JP5996846B2 (en) * | 2011-06-30 | 2016-09-21 | シャープ株式会社 | Nitride semiconductor light emitting device and manufacturing method thereof |
WO2019227026A1 (en) * | 2018-05-24 | 2019-11-28 | The Regents Of The University Of California | Quantum dot lasers and methods for making the same |
TWI742714B (en) * | 2019-06-11 | 2021-10-11 | 全新光電科技股份有限公司 | Semiconductor laser diode |
GB2609474A (en) * | 2021-08-04 | 2023-02-08 | Iqe Plc | Multi-wavelength light-emitting semiconductor devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5557626A (en) * | 1994-06-15 | 1996-09-17 | Motorola | Patterned mirror VCSEL with adjustable selective etch region |
US6392979B1 (en) * | 1997-01-17 | 2002-05-21 | Matsushita Electric Industrial Co., Ltd. | Optical pickup and optical disk apparatus using the same |
Family Cites Families (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US75920A (en) * | 1868-03-24 | Feanz h utwohl | ||
US4445218A (en) * | 1981-09-28 | 1984-04-24 | Bell Telephone Laboratories, Incorporated | Semiconductor laser with conductive current mask |
US4608697A (en) * | 1983-04-11 | 1986-08-26 | At&T Bell Laboratories | Spectral control arrangement for coupled cavity laser |
US4622672A (en) | 1984-01-20 | 1986-11-11 | At&T Bell Laboratories | Self-stabilized semiconductor lasers |
US4829347A (en) * | 1987-02-06 | 1989-05-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Process for making indium gallium arsenide devices |
GB8708436D0 (en) * | 1987-04-08 | 1987-05-13 | British Telecomm | Reagent source |
JPS6461081A (en) * | 1987-09-01 | 1989-03-08 | Japan Res Dev Corp | Distributed-feedback type semiconductor laser and manufacture thereof |
US5025751A (en) * | 1988-02-08 | 1991-06-25 | Hitachi, Ltd. | Solid film growth apparatus |
US4911101A (en) * | 1988-07-20 | 1990-03-27 | General Electric Company | Metal organic molecular beam epitaxy (MOMBE) apparatus |
US4896325A (en) * | 1988-08-23 | 1990-01-23 | The Regents Of The University Of California | Multi-section tunable laser with differing multi-element mirrors |
US5080870A (en) * | 1988-09-08 | 1992-01-14 | Board Of Regents, The University Of Texas System | Sublimating and cracking apparatus |
US4873696A (en) * | 1988-10-31 | 1989-10-10 | The Regents Of The University Of California | Surface-emitting lasers with periodic gain and a parallel driven nipi structure |
US5040186A (en) * | 1990-03-13 | 1991-08-13 | At&T Bell Laboratories | InP-based quantum-well laser |
JP2596195B2 (en) * | 1990-08-20 | 1997-04-02 | 日本電気株式会社 | Vertical resonator type surface input / output photoelectric fusion device |
US5082799A (en) * | 1990-09-14 | 1992-01-21 | Gte Laboratories Incorporated | Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers |
JPH069297A (en) * | 1991-12-09 | 1994-01-18 | Sumitomo Electric Ind Ltd | Film forming device |
US5276700A (en) * | 1992-03-12 | 1994-01-04 | Trw Inc. | 2-D monolithic coherent semiconductor laser array |
US5245622A (en) * | 1992-05-07 | 1993-09-14 | Bandgap Technology Corporation | Vertical-cavity surface-emitting lasers with intra-cavity structures |
US5251225A (en) * | 1992-05-08 | 1993-10-05 | Massachusetts Institute Of Technology | Quantum-well diode laser |
US5293392A (en) * | 1992-07-31 | 1994-03-08 | Motorola, Inc. | Top emitting VCSEL with etch stop layer |
JP2783086B2 (en) | 1992-09-25 | 1998-08-06 | 日本電気株式会社 | Semiconductor laser device and optical connection device |
US5343487A (en) * | 1992-10-01 | 1994-08-30 | Optical Concepts, Inc. | Electrical pumping scheme for vertical-cavity surface-emitting lasers |
US5400739A (en) * | 1992-10-09 | 1995-03-28 | Texas Instruments Incorporated | Method for controlling thin film growth of compound semiconductors using mass spectrometer detectors |
US5568504A (en) * | 1992-12-03 | 1996-10-22 | Siemens Aktiengesellschaft | Surface-emitting laser diode |
US5416044A (en) * | 1993-03-12 | 1995-05-16 | Matsushita Electric Industrial Co., Ltd. | Method for producing a surface-emitting laser |
JP3207590B2 (en) * | 1993-03-15 | 2001-09-10 | 富士通株式会社 | Optical semiconductor device |
JPH06326407A (en) * | 1993-03-18 | 1994-11-25 | Fujitsu Ltd | Semiconductor laser |
JP3135185B2 (en) | 1993-03-19 | 2001-02-13 | 三菱電機株式会社 | Semiconductor etching solution, semiconductor etching method, and method for determining GaAs surface |
JP3362356B2 (en) | 1993-03-23 | 2003-01-07 | 富士通株式会社 | Optical semiconductor device |
US5358880A (en) * | 1993-04-12 | 1994-10-25 | Motorola, Inc. | Method of manufacturing closed cavity LED |
GB2277405A (en) | 1993-04-22 | 1994-10-26 | Sharp Kk | Semiconductor colour display or detector array |
US5456205A (en) | 1993-06-01 | 1995-10-10 | Midwest Research Institute | System for monitoring the growth of crystalline films on stationary substrates |
US5383211A (en) * | 1993-11-02 | 1995-01-17 | Xerox Corporation | TM-polarized laser emitter using III-V alloy with nitrogen |
US5422901A (en) * | 1993-11-15 | 1995-06-06 | Motorola, Inc. | Semiconductor device with high heat conductivity |
US5559818A (en) * | 1994-03-24 | 1996-09-24 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
US5491710A (en) * | 1994-05-05 | 1996-02-13 | Cornell Research Foundation, Inc. | Strain-compensated multiple quantum well laser structures |
US5480813A (en) * | 1994-06-21 | 1996-01-02 | At&T Corp. | Accurate in-situ lattice matching by reflection high energy electron diffraction |
JPH0897147A (en) * | 1994-09-29 | 1996-04-12 | Mitsubishi Electric Corp | Epitaxial crystal growth device |
AU4695096A (en) | 1995-01-06 | 1996-07-24 | National Aeronautics And Space Administration - Nasa | Minority carrier device |
US5513204A (en) * | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
JPH08293489A (en) | 1995-04-25 | 1996-11-05 | Sharp Corp | Method of dry etching gallium nitride based compound semiconductor |
JP3691544B2 (en) * | 1995-04-28 | 2005-09-07 | アジレント・テクノロジーズ・インク | Manufacturing method of surface emitting laser |
JP3710524B2 (en) * | 1995-08-31 | 2005-10-26 | シャープ株式会社 | Ridge waveguide type distributed feedback semiconductor laser device and manufacturing method thereof |
FR2739230B1 (en) * | 1995-09-22 | 1997-12-19 | Oudar Jean Louis | VERTICAL CAVITY LASER EMISSION COMPONENT WITH SURFACE EMISSION AT A WAVELENGTH BETWEEN 1.3 AND 1.5 MU M AND PROCESS FOR ITS REALIZATION |
US6061381A (en) * | 1995-09-29 | 2000-05-09 | British Telecommunications Public Limited Company | Optically resonant structure |
US5760939A (en) * | 1995-10-23 | 1998-06-02 | Sdl, Inc. | Optical transmission link capable of high temperature operation without cooling with an optical receiver module having temperature independent sensitivity performance and optical transmitter module with laser diode source |
US5757833A (en) * | 1995-11-06 | 1998-05-26 | The Furukawa Electric Co., Ltd. | Semiconductor laser having a transparent light emitting section, and a process of producing the same |
US5719891A (en) * | 1995-12-18 | 1998-02-17 | Picolight Incorporated | Conductive element with lateral oxidation barrier |
EP0784363B1 (en) | 1995-12-26 | 2000-10-11 | Nippon Telegraph and Telephone Corporation | Vertical-cavity surface-emitting laser and method for manufacturing the same |
FR2743195B1 (en) * | 1995-12-27 | 1998-02-06 | Alsthom Cge Alcatel | SURFACE EMITTING SEMICONDUCTOR LASER |
FR2743196B1 (en) * | 1995-12-27 | 1998-02-06 | Alsthom Cge Alcatel | METHOD FOR MANUFACTURING A SURFACE EMITTING SEMICONDUCTOR LASER |
US5912913A (en) * | 1995-12-27 | 1999-06-15 | Hitachi, Ltd. | Vertical cavity surface emitting laser, optical transmitter-receiver module using the laser, and parallel processing system using the laser |
JP3428797B2 (en) | 1996-02-08 | 2003-07-22 | 古河電気工業株式会社 | Semiconductor laser device |
US5780867A (en) * | 1996-03-07 | 1998-07-14 | Sandia Corporation | Broadband light-emitting diode |
US5754578A (en) * | 1996-06-24 | 1998-05-19 | W. L. Gore & Associates, Inc. | 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser |
US5805624A (en) * | 1996-07-30 | 1998-09-08 | Hewlett-Packard Company | Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate |
US5724374A (en) | 1996-08-19 | 1998-03-03 | Picolight Incorporated | Aperture comprising an oxidized region and a semiconductor material |
JP3788831B2 (en) * | 1996-08-30 | 2006-06-21 | 株式会社リコー | Semiconductor device and manufacturing method thereof |
FR2753577B1 (en) * | 1996-09-13 | 1999-01-08 | Alsthom Cge Alcatel | METHOD FOR MANUFACTURING A SEMICONDUCTOR OPTOELECTRONIC COMPONENT AND COMPONENT AND MATRIX OF COMPONENTS MANUFACTURED ACCORDING TO THIS METHOD |
US5719895A (en) * | 1996-09-25 | 1998-02-17 | Picolight Incorporated | Extended wavelength strained layer lasers having short period superlattices |
US5719894A (en) * | 1996-09-25 | 1998-02-17 | Picolight Incorporated | Extended wavelength strained layer lasers having nitrogen disposed therein |
US5825796A (en) * | 1996-09-25 | 1998-10-20 | Picolight Incorporated | Extended wavelength strained layer lasers having strain compensated layers |
JP3854693B2 (en) * | 1996-09-30 | 2006-12-06 | キヤノン株式会社 | Manufacturing method of semiconductor laser |
JPH10173294A (en) * | 1996-10-07 | 1998-06-26 | Canon Inc | Multilayered compound semiconductor film mirror containing nitrogen and surface type light emitting device |
US5877038A (en) * | 1996-11-27 | 1999-03-02 | The Regents Of The University Of California | Method of making a vertical cavity laser |
US5788776A (en) * | 1996-12-02 | 1998-08-04 | Chorus Corporation | Molecular beam epitaxy isolation tube system |
US5732103A (en) * | 1996-12-09 | 1998-03-24 | Motorola, Inc. | Long wavelength VCSEL |
US5883912A (en) * | 1996-12-09 | 1999-03-16 | Motorola, Inc. | Long wavelength VCSEL |
US5835521A (en) | 1997-02-10 | 1998-11-10 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
US5815524A (en) * | 1997-02-25 | 1998-09-29 | Motorola, Inc. | VCSEL including GaTlP active region |
US5898722A (en) * | 1997-03-10 | 1999-04-27 | Motorola, Inc. | Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication |
EP0865124B1 (en) * | 1997-03-12 | 2003-01-22 | BRITISH TELECOMMUNICATIONS public limited company | Mirrors for VCSEL |
FR2761822B1 (en) * | 1997-04-03 | 1999-05-07 | Alsthom Cge Alcatel | SEMICONDUCTOR LASER WITH SURFACE EMISSION |
US5943359A (en) * | 1997-04-23 | 1999-08-24 | Motorola, Inc. | Long wavelength VCSEL |
US5903586A (en) * | 1997-07-30 | 1999-05-11 | Motorola, Inc. | Long wavelength vertical cavity surface emitting laser |
US5978398A (en) * | 1997-07-31 | 1999-11-02 | Motorola, Inc. | Long wavelength vertical cavity surface emitting laser |
US5956363A (en) * | 1997-08-15 | 1999-09-21 | Motorola, Inc. | Long wavelength vertical cavity surface emitting laser with oxidation layers and method of fabrication |
US5943357A (en) * | 1997-08-18 | 1999-08-24 | Motorola, Inc. | Long wavelength vertical cavity surface emitting laser with photodetector for automatic power control and method of fabrication |
US6061380A (en) * | 1997-09-15 | 2000-05-09 | Motorola, Inc. | Vertical cavity surface emitting laser with doped active region and method of fabrication |
US6021147A (en) * | 1997-11-04 | 2000-02-01 | Motorola, Inc. | Vertical cavity surface emitting laser for high power single mode operation and method of fabrication |
US6148016A (en) | 1997-11-06 | 2000-11-14 | The Regents Of The University Of California | Integrated semiconductor lasers and photodetectors |
US6002705A (en) | 1997-12-03 | 1999-12-14 | Xerox Corporation | Wavelength and polarization multiplexed vertical cavity surface emitting lasers |
JPH11251685A (en) * | 1998-03-05 | 1999-09-17 | Toshiba Corp | Semiconductor laser |
US5991326A (en) * | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6195381B1 (en) * | 1998-04-27 | 2001-02-27 | Wisconsin Alumni Research Foundation | Narrow spectral width high-power distributed feedback semiconductor lasers |
US6207973B1 (en) * | 1998-08-19 | 2001-03-27 | Ricoh Company, Ltd. | Light emitting devices with layered III-V semiconductor structures |
US6344084B1 (en) * | 1998-09-11 | 2002-02-05 | Japan Science And Technology Corporation | Combinatorial molecular layer epitaxy device |
US6195485B1 (en) * | 1998-10-26 | 2001-02-27 | The Regents Of The University Of California | Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector |
US6314118B1 (en) | 1998-11-05 | 2001-11-06 | Gore Enterprise Holdings, Inc. | Semiconductor device with aligned oxide apertures and contact to an intervening layer |
US6603784B1 (en) * | 1998-12-21 | 2003-08-05 | Honeywell International Inc. | Mechanical stabilization of lattice mismatched quantum wells |
US6252896B1 (en) * | 1999-03-05 | 2001-06-26 | Agilent Technologies, Inc. | Long-Wavelength VCSEL using buried bragg reflectors |
US6341137B1 (en) * | 1999-04-27 | 2002-01-22 | Gore Enterprise Holdings, Inc. | Wavelength division multiplexed array of long-wavelength vertical cavity lasers |
US6621842B1 (en) * | 1999-10-15 | 2003-09-16 | E20 Communications, Inc. | Method and apparatus for long wavelength semiconductor lasers |
US6424669B1 (en) * | 1999-10-29 | 2002-07-23 | E20 Communications, Inc. | Integrated optically pumped vertical cavity surface emitting laser |
US6714572B2 (en) * | 1999-12-01 | 2004-03-30 | The Regents Of The University Of California | Tapered air apertures for thermally robust vertical cavity laser structures |
US7016391B2 (en) * | 2000-03-13 | 2006-03-21 | Sharp Kabushiki Kaisha | Gain-coupled distributed feedback semiconductor laser device and production method therefor |
JP3735047B2 (en) * | 2000-07-31 | 2006-01-11 | 古河電気工業株式会社 | Semiconductor laser device and manufacturing method thereof |
WO2002017448A1 (en) * | 2000-08-22 | 2002-02-28 | Regents Of The University Of California, The | Distributed bragg reflectors incorporating sb material for long-wavelength vertical cavity surface emitting lasers |
WO2002023641A1 (en) * | 2000-09-15 | 2002-03-21 | Regents Of The University Of California | Oxide and air apertures and method of manufacture |
US6542530B1 (en) * | 2000-10-27 | 2003-04-01 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL and methods of fabrication |
JP3575423B2 (en) * | 2000-12-13 | 2004-10-13 | 日本電気株式会社 | Corporate information system and corporate information management method |
US20020075920A1 (en) * | 2000-12-15 | 2002-06-20 | Sylvia Spruytte | Laser diode device with nitrogen incorporating barrier |
US6434180B1 (en) * | 2000-12-19 | 2002-08-13 | Lucent Technologies Inc. | Vertical cavity surface emitting laser (VCSEL) |
US6362069B1 (en) * | 2000-12-28 | 2002-03-26 | The Trustees Of Princeton University | Long-wavelength VCSELs and method of manufacturing same |
US20020131462A1 (en) * | 2001-03-15 | 2002-09-19 | Chao-Kun Lin | Intracavity contacted long wavelength VCSELs with buried antimony layers |
US20030013223A1 (en) * | 2001-07-16 | 2003-01-16 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant III-V arsenide nitride substrate used to form the same |
US6647050B2 (en) * | 2001-09-18 | 2003-11-11 | Agilent Technologies, Inc. | Flip-chip assembly for optically-pumped lasers |
-
2005
- 2005-03-14 US US11/079,148 patent/US7286585B2/en not_active Expired - Fee Related
- 2005-08-31 WO PCT/US2005/030819 patent/WO2006026610A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5557626A (en) * | 1994-06-15 | 1996-09-17 | Motorola | Patterned mirror VCSEL with adjustable selective etch region |
US6392979B1 (en) * | 1997-01-17 | 2002-05-21 | Matsushita Electric Industrial Co., Ltd. | Optical pickup and optical disk apparatus using the same |
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US7286585B2 (en) | 2007-10-23 |
WO2006026610A2 (en) | 2006-03-09 |
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