WO2006034767A1 - Electrical assembly and method for the production of an electrical assembly - Google Patents

Electrical assembly and method for the production of an electrical assembly Download PDF

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Publication number
WO2006034767A1
WO2006034767A1 PCT/EP2005/009406 EP2005009406W WO2006034767A1 WO 2006034767 A1 WO2006034767 A1 WO 2006034767A1 EP 2005009406 W EP2005009406 W EP 2005009406W WO 2006034767 A1 WO2006034767 A1 WO 2006034767A1
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WO
WIPO (PCT)
Prior art keywords
metallization
arrangement according
substrate
electrical
component
Prior art date
Application number
PCT/EP2005/009406
Other languages
German (de)
French (fr)
Inventor
Thomas Passe
Peter Kanschat
Original Assignee
eupec Europäische Gesellschaft für Leistungshalbleiter mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by eupec Europäische Gesellschaft für Leistungshalbleiter mbH filed Critical eupec Europäische Gesellschaft für Leistungshalbleiter mbH
Publication of WO2006034767A1 publication Critical patent/WO2006034767A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/0012—Apparatus for achieving spraying before discharge from the apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/0075—Nozzle arrangements in gas streams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/14—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas designed for spraying particulate materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B05B7/1606—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air
    • B05B7/1613—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air comprising means for heating the atomising fluid before mixing with the material to be sprayed
    • B05B7/162—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air comprising means for heating the atomising fluid before mixing with the material to be sprayed and heat being transferred from the atomising fluid to the material to be sprayed
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
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    • C23C24/04—Impact or kinetic deposition of particles
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
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    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H01L2924/1617—Cavity coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1333—Deposition techniques, e.g. coating
    • H05K2203/1344—Spraying small metal particles or droplets of molten metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/17—Post-manufacturing processes
    • H05K2203/173—Adding connections between adjacent pads or conductors, e.g. for modifying or repairing

Definitions

  • the invention relates to an electrical arrangement having a substrate with at least one electrical component and / or a printed conductor on which at least one metallization is applied.
  • the invention is in the field of electrical and electronic construction and circuit technology, in particular power semiconductor circuit technology, and is an electrical arrangement, in particular for electrical contacting and / or heat dissipating or heat-conducting assembly of electrical components , and directed to a method for producing such an arrangement.
  • component is to be understood widely in the context of the present invention and generally includes circuit elements such as semiconductors (eg power transistors and diodes), integrated components (ICs), passive components but also other electrical elements such as eg Heating elements, conductors, printed conductors and structural elements - such as e.g. On closing contacts and the like.
  • circuit elements such as semiconductors (eg power transistors and diodes), integrated components (ICs), passive components but also other electrical elements such as eg Heating elements, conductors, printed conductors and structural elements - such as e.g. On closing contacts and the like.
  • Such components are often operated in high packing or power density and convert electrical energy into heat energy. This leads to a heating of the components, which can lead to a functional impairment and at worst to a destruction of the components. Therefore, for a reliable dissipation of the operational arising .
  • a component e.g. an electric heater, which is arranged isolated from a heat-receiving component, to realize a heat flow with low thermal resistance to the component.
  • US Pat. No. 5,559,374 discloses an electrical arrangement of the type mentioned in the introduction and a method for the production thereof.
  • the known arrangement comprises a metallic substrate, on the upper side of which a multilayer film is laminated by means of so-called thermo-setting under pressure and heat.
  • This consists of an upper-side copper foil and an underlying plastic carrier foil.
  • the plastic forms an insulating layer.
  • photo-etching can then be used to produce copper structures which form mounting regions and interconnects. Reflow soldering in the mounting areas on the copper structures produces thick film
  • Conductors are formed, with which by means of the reflow soldering process copper plates are soldered, which are designed for a high current flow.
  • the copper plates serve with in ⁇ tegralen extensions for external connection to power-side high current lines.
  • On the copper plates are components in the form of power semiconductors such. Soldered IGBTs.
  • the object of the present invention is therefore to specify an arrangement and a method for its production which can be produced simply and inexpensively at particularly high maximum permissible operating temperatures even in the area of complicated substrate topologies.
  • the electrical arrangement comprises a substrate on which at least one electrical component, for example a power semiconductor such as an IGBT, and / or a conductor track is or is arranged. At least one cold gas sprayed metallization is applied to the substrate.
  • An essential aspect of the invention is therefore that by means of known cold gas spraying a Metalli ⁇ tion for interconnection and / or recording or fixing e- lektrischer or mechanical components is used.
  • the coating material is not molten or melted, in contrast to known common spraying processes. Rather, the coating material in fine or very fine powder form - the powder particles have a size of, for example, 1 .mu.m to 50 .mu.m - accelerated in ei ⁇ nem to.
  • the powder particles reach speeds of about 300 m / s to 1200 m / s.
  • the gas stream may preferably have an anti-oxidizing effect on the particles.
  • the particles deform on impact on the substrate and form a dense and firmly adhering layer thereon.
  • any surface oxides formed on the substrate are advantageously also broken up and a micro-friction between the particles results Such an increase in temperature causes microwelding to occur at the contact surfaces.
  • the inventive arrangement is superior in its electrical, thermal and mechanical properties: To view Lotver ⁇ bonds already when heated above about 115 0 C, a sig ⁇ nifikante change their mechanical properties - which he find contemporary arrangement On the other hand, they are still mechanically stable in these temperature ranges.
  • a particularly advantageous aspect in the arrangement according to the invention is that not only thin, but also comparatively larger layer thicknesses or structures can be realized by means of cold gas spraying. Thicker structures are advantageous with regard to the heat conduction and the minimization of the electrical line resistance.
  • This arrangement can also be realized, which are characterized by a particularly homogeneous, reliable and even on Berei ⁇ surfaces with complex geometries reliable metallization.
  • Another essential aspect of the invention is that a large number of starting materials can be used which, for example, have a comparatively low heat resistance and thus an effective heat flow, for example of components to the substrate (heat dissipation) or of a heating device. tion to a component to be heated (heat) on the substrate allow.
  • the properties of the metallization can thus be directly influenced.
  • the choice of copper, silver or gold as starting material the realization of extremely low-ohmic, good heat-conducting metallizations.
  • Such low-resistance metallizations are especially in the high current range at low operating voltages - such. in automotive engineering - advantageous.
  • the metallization may also preferably itself form a conductor track. According to a further preferred embodiment of the invention, this conductor forms a surface which serves for electromagnetic shielding against EMC interference.
  • the metallization may be used to form electrical resistances, preferably of a resistive material, such as, e.g. Konstantan or Manginan exist.
  • the resistor regions thus formed are inexpensive and easy to implement and, because of their proximity to the substrate, are characterized by a good thermal connection to the substrate.
  • the resistance values can be determined by appropriate design of the resistive material
  • Layer thickness and / or layer geometry are additionally adapted to the respective requirements.
  • the material known under the name Konstantan is usually an alloy of 55% copper and 45% nickel, which is characterized by a constant in a wide temperature range electrical resistance.
  • An alloy (86% copper / 12% manganese / 2% nickel) with a similar low Temperature coefficient is commercially available under the name Manganin.
  • the metallization can preferably also be a valve metal or a valve metal alloy which is or preferably at least partially anodically oxidized.
  • Valve metals are generally understood to mean metals which, in the case of anodic polarity, overlap with an oxide layer which does not become conductive (strikes through) even at high voltages.
  • insulation layers can be selectively produced on a previously cold-sprayed metallization.
  • the valve metal used is preferably aluminum, magnesium, titanium, zirconium or tantalum and as the valve metal alloy AlCu, AlCuMg, AlMg, AlZnMg, AlZnMgCu, AlSiCu, AlMgSi, AlSi, AlMn or AlMgMn.
  • the metallization may be applied to an electrical insulator such as e.g. be sprayed a ceramic substrate.
  • a substrate is used which consists of a relatively soft base material (e.g., plastic) into which hard fillers or packing (e.g., ceramic powder) are incorporated.
  • the soft base material is at least partially removed during the cold gas spraying, so that the actual coating comes into contact to a greater extent with the har ⁇ th fillers. As a result, a particularly solid and hard coating can be realized.
  • Substrate surface and metallization provided an insulating layer.
  • aluminum may be applied to a ceramic (for example SiC or A12O3) and oxidized to form an insulating layer, preferably by plasma electrochemical oxidation (PEO).
  • a metallization can then be sprayed onto this insulating layer, on which in turn e.g. an electrical component can be mounted and contacted.
  • this metallization can also be oxidized to form an insulation layer. In this way, a multi-layered construction - also using different materials - is possible to better compensate for thermally induced stresses and to achieve an improved mechanical behavior.
  • the invention plays one of its particular advantages, namely the comparatively low thermal load of the substrate. Since the metallization is associated with only a very small amount of heat input, hardly any thermally induced mechanical stresses arise and thus no deflections or deformations of the substrate (as for example in conventional DCB (Direct Copper Bonding) technology). Therefore, according to the invention, it is also possible to metallize arrangements with comparatively large surfaces, which requires considerably more effort in traditional technology. Further reduction of thermal stress can be achieved by using mechanical buffers - e.g. Molybdenum - be applied as an intermediate layer in the cold gas spraying process.
  • mechanical buffers e.g. Molybdenum
  • the metallization may preferably have at least one recess or geometric depression-referred to as a countersunk hole for short. net - fill out. In this way, the mechanical connection between the substrate and the metallization is improved and, if required, contacting of deeper substrate regions or connection of a component electrically insulated on the substrate with the substrate is possible and the heat conduction into or out of the volume of the substrate is improved ,
  • connection contacts can also be formed as integral constituents.
  • this can preferably be realized by virtue of the fact that by means of a mask applied during the cold gas spraying process, e.g. a high standing pin or contact extension is formed.
  • the metallization is an additional material, for example silicon, ceramic and / or carbon, attached.
  • advantageously parameters - such as e.g. the hardness, the Leit ⁇ ability or the thermal expansion coefficient - the metallization depending on the application and needs can be adjusted.
  • Another essential advantage of the invention consists - as already mentioned - in that comparatively thick or massive metallizations can be produced with little effort and low thermal stress on the substrate or the structures formed thereon.
  • an embodiment of the invention is preferred in which the metallization forms an electrical connection between two conductors, of which at least one conductor is arranged on the substrate.
  • the metallization represents a material and possibly a positive connection. fertilize.
  • This compound also has the advantage that it has a very wide range of applications, is extremely low-resistance, good heat-conducting and yet thermally and mechanically very stable. It is therefore also ideally suited for applications with very high electric currents.
  • one of the conductors may be used as a terminal, e.g. be designed as a pin or eyelet.
  • the connection contact is mechanically supported by a housing.
  • a production-wise advantageous arrangement according to the invention which is preferred for a particularly compact and protected arrangement of a component on a substrate, provides that a base metallization is applied to the substrate. On this at least one electrical Bau ⁇ part is arranged and the component is at least partially surrounded by a circuit board.
  • the metallization realizes an electrical connection between the component and the circuit board.
  • the component can be placed in a recess of the circuit board and the component to be surrounded by insulation.
  • the insulation may be formed by a sealing and insulating material, eg a plastic or resin.
  • the insulation can surround the component like a ring, so that there is an upper opening or recess through which the metallization can be applied in order to contact the component in the desired manner.
  • the arrangement according to the invention can also be configured in that the cold-sprayed metallization connects a plurality of conductor tracks on different spatial levels. According to a preferred embodiment of the invention, it is provided that the metallization connects an electrical conductor arranged on the substrate in a first plane to an electrical conductor which is arranged in a second plane on the substrate.
  • the invention also relates to a method for producing an electrical arrangement with the aim of applying an electrically conductive layer or a conductive connection region with excellent electrical and thermal conductivity properties with high thermal and mechanical stability to a substrate substantially free of stress.
  • This object is achieved according to the invention by arranging a component and / or a printed conductor on a substrate and applying a metallization by cold gas spraying, which contacts the component and / or the printed conductor electrically.
  • the substrate is preferably masked during cold gas spraying; In this way, it is possible to apply targeted targeted metallization to desired substrate areas.
  • an advantageous further development of the method according to the invention provides that the substrate is aligned with its upper surface in relation to a support plane of a support, at least one electrical connection contact is formed by cold gas spraying of a metallization which is the Closing contact extends at least partially on the support plane, and the carrier is removed after completion of the terminal contact.
  • FIG. 1 shows the basic structure of a device for producing an arrangement according to the invention and for carrying out the method according to the invention
  • FIG. 2 shows a device modified relative to FIG. 1 for producing a device with a connection
  • FIG. 3 shows an arrangement with a connection contact protruding from a connection plane
  • FIG. 4 shows a modified arrangement compared to FIG. 3
  • FIG. 5 shows an arrangement with a component
  • FIG. 6 shows a further arrangement with a component
  • FIG. 7 shows a further arrangement with a component that is insulated and protected
  • FIG. 8 shows an arrangement with an electrical shield
  • FIG. 9 shows an arrangement with a connection of two conductors in different planes
  • Figure 10 shows an arrangement with contact terminals
  • Figure 11 shows the conditions when using a substrate made of a soft base material, which is filled with hard grains.
  • an anti-oxidizing conveying gas 1 flows at a pressure of 15 to 35 bar into a device 2 and is heated to a few 100 ° C. by means of heating elements 3.
  • copper is supplied in the form of the finest copper particles 6 as the starting material (coating material). These are not melted or melted in contrast to known common spraying method, but accelerated by the high-pressure gas flow in a fine powder form from a nozzle 7 as a jet on an upper surface 8 of a ceramic substrate 9.
  • the powder particles reach speeds of about 300 to 1200 m / s.
  • the comparatively high kinetic energy deforms the particles when they impact the upper side 8, thereby forming a solid "entangled" copper layer in the form of a metallization 10.
  • the metallization forms in this simple embodiment, a conductor 11, which can serve for elekt ⁇ cal contacting and / or heat dissipation from a component, not shown.
  • the metallization 10 can fill a suggestively lowered recess 9a in the substrate 9 in order, for example, to realize an improved heat conduction from the substrate.
  • a resistance material IIa such as Konstantan or manginane as starting material 5 can also directly electrical resistances are formed on the substrate, which are characterized by a good thermal connection to the substrate and thus by a good dissipation ent ⁇ standing in the heat resistance.
  • FIG. 2 shows a device modified with respect to FIG. 1, in which the irradiation of the surface 8 of the substrate 9 with particles 6 takes place from the nozzle 7 in the vertical direction 12.
  • two conductor tracks 14, 15 are arranged on the upper side 8. These are electrically connected to one another by the cold-sprayed, highly conductive and mechanical resistant connection 16.
  • the substrate is designed here as an insulator (ceramic). However, it is also conceivable to manufacture the substrate from a conductive material (for example aluminum) and to realize an insulation to the substrate by providing an insulating layer on the substrate.
  • aluminum can be applied to a ceramic (for example SiC or A12O3) and oxidized to form an insulating layer, preferably by plasma electrochemical oxidation (PEO).
  • a metallization can then be sprayed onto this insulating layer, on which in turn e.g. An electrical component can be mounted and contacted.
  • this metallization can also be oxidized to form an insulation layer. In this way, a multilayer construction is possible.
  • FIG. 3 shows an arrangement with a connection contact projecting from a connection plane;
  • an electrical conductor 18 is arranged as a connection element or connection contact 19 on the substrate 9 and connected to a further conductor 20 by a cold-sprayed metallization 21.
  • the Conductor 18 extends at right angles out of the connecting plane and is supported by a housing 22, which is indicated only schematically. The housing thus absorbs the external mechanical forces acting on the terminal contact and thus protects the connection. It can be seen that the metallization in a double function not only effects the electrical connection, but also the mechanical fixation of the conductor 18 on the upper side of the conductor 20.
  • FIG. 4 shows a modified arrangement with respect to FIG. 3, in which the conductor 18 lies with its connection-side end in the same plane as the conductor 20 and is connected via a cold-sprayed metallization 23 and fixed mechanically on the substrate 9.
  • the portion of the conductor 18 forming the terminal contact 19 may be supported by a relief or a housing as shown in FIG.
  • Figure 5 shows an arrangement with a substrate 9, on which an electrical conductor 25 is applied.
  • an electrical component 26 On the conductor 25 is an electrical component 26.
  • an electrical insulator 27 made of plastic, which has a sealing and insulating circumferential lip. This insulates the edge of the component and is essentially ring-shaped.
  • an opening 28 is provided, through which the cold-sprayed metallization 29 penetrates and forms a connection through which the upper side of the component is contacted by means of an integrally formed conductor track.
  • FIG. 6 shows a further arrangement with a component similar to the embodiment according to FIG.
  • a metallization 30 is applied to a substrate or carrier material 9, on which a power semiconductor (component) 31, for example an IGBT, is arranged and with its lower connection electrode is electrically connected.
  • a power semiconductor (component) 31 for example an IGBT
  • the edge region of the component 31 is covered by an insulator 32 for protection and insulation.
  • a circuit board 33 is arranged, which has an opening or a recess 34 for the component.
  • the upper side 35 of the circuit board 33 is provided with copper chasing or conductor tracks 36 known per se, with which the component 31 is electrically connected by means of a cold-sprayed metallization 37.
  • the metallization also ensures a mechanically fixed fixation of the component in this arrangement.
  • On the metallization 37 may preferably be mounted for heat dissipation, a cooling element 38 or a heat sink.
  • FIG. 7 shows a further arrangement with a substrate or carrier element 9 and with a component 40 insulated and protected thereon.
  • the substrate On its upper side 8, the substrate has at least two interconnects 41, 42 insulated from one another.
  • the component 40 is connected via small electrical Ver ⁇ connecting elements 43 with its underside with the conductor 42 -. by soldering - electrically connected.
  • Component 40, the Ardiemente 43 and the conductor 42 below the component are Tin-sprayed metallization 46, an electrical connection of the component top side 47 to the conductor track 41 is realized.
  • FIG. 8 shows a perspective view of an embodiment of the invention in which a metallization 50 is designed for electrical shielding or against EMC interference.
  • the metallization 50 - as explained in detail in connection with FIG. 1 - can be cold-sprayed onto the (inner) surface 51 of a nonconductive substrate 53 designed as a housing shell.
  • a highly conductive starting material such as copper or gold. This can prevent electromagnetic interference from leaking out of or entering the housing 53.
  • the metallization could also be applied to the outer surface 54 of the housing shell 53.
  • the housing shell may cover another substrate 55, which may be metallized as described above, for example.
  • FIG. 9 shows an arrangement with a connection of two conductors in different planes.
  • a substrate 9 has a first plane 60 with a metallic coating or conductor track 61 and a second plane 62 with a coating or conductor track 63.
  • a metallization 65 is provided, which is made of a cold-sprayed, highly conductive material, such as e.g. Copper exists. This extends under conductive connection of the conductor tracks 61, 63 through a recess 66 in the substrate.
  • the recess is conical, that is designed with mutually facing bevels. This allows for a preferred perpendicular irradiation of the substrate through a mask 67 having openings 68, 69 therethrough.
  • the metallization 65 is generated through the opening 68, as are material residues 70 in this mask region.
  • a metallization or a particle beam 6 is also shown through the opening 69.
  • several mask openings can be irradiated simultaneously.
  • a substrate for Koch ⁇ head mounting (flip-chip) of a component can be realized.
  • the interconnects can also serve for external contacting of the component.
  • FIG. 10 shows an embodiment of the method according to the invention for producing an arrangement with partially free cantilever-type contact connections.
  • a substrate 9 is here aligned with its upper side 8 in relation to a support plane 71 of a carrier 72 indicated only by dashed lines, flat and flush. Subsequently, as explained in detail, e.g. By masking at least one electrical connection contact 74, 75, 76, 77 by cold gas spraying of Me ⁇ tall isten 78 formed.
  • the metallizations are in each case in electrical contact with a connection surface 81, 82, 83, 84.
  • the substrate surface is therefore in one plane with a surrounding carrier substrate (indicated by dashed lines) which, after completion of the process Metallizations is removed. This results in the protruding crest-carrier-like connection contacts recognizable in FIG.
  • a support of the terminal contacts by e.g. housing-side elements take place.
  • FIG. 11 shows the conditions when using a substrate 90 made of a soft base material which is filled with hard grains.
  • the initial state of the substrate is shown schematically on the left in FIG. 11; softer base material (e.g., plastic) 91 and filler particles or grains 92 of a hard material, e.g. Ceramic grains.
  • connection 18 conductor

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Abstract

Disclosed is an electrical assembly comprising a substrate (9) with at least one electrical component (40) and/or a strip conductor (11) to which at least one metallization (10) is applied. The aim of the invention is to apply an electrically conducting layer or a conductive connecting area having excellent electrical and thermal conduction properties as well as great thermal and mechanical stability to the substrate in a largely stress-free manner. Said aim is achieved by providing at least one cold gas-injected metallization as a strip conductor or as an electrical connection between two conductors.

Description

Beschreibungdescription
Elektrische Anordnung und Verfahren zum Herstellen einer e- lektrisehen AnordnungElectrical arrangement and method for producing an electrical arrangement
Die Erfindung betrifft eine elektrische Anordnung mit einem Substrat mit mindestens einem elektrischen Bauteil und/oder einer Leiterbahn, auf dem mindestens eine Metallisierung auf¬ gebracht ist.The invention relates to an electrical arrangement having a substrate with at least one electrical component and / or a printed conductor on which at least one metallization is applied.
Die Erfindung liegt auf dem Gebiet der elektrischen und e- lektronischen Aufbau- und Schaltungstechnik, insbesondere der Leistungshalbleiter-Schaltungstechnik, und ist auf eine e- lektrische Anordnung, insbesondere zur elektrischen Kontak- tierung und/oder zur Wärme ableitenden oder Wärme zuleitenden Montage elektrischer Bauteile, und auf ein Verfahren zum Her¬ stellen einer solchen Anordnung gerichtet.The invention is in the field of electrical and electronic construction and circuit technology, in particular power semiconductor circuit technology, and is an electrical arrangement, in particular for electrical contacting and / or heat dissipating or heat-conducting assembly of electrical components , and directed to a method for producing such an arrangement.
Der Begriff "Bauteil" ist im Rahmen der vorliegenden Erfin- düng weit zu verstehen und umfasst allgemein Schaltungsele¬ mente wie Halbleiter (z.B. Leistungs-Transistoren und Dio¬ den) , integrierte Bauelemente (ICs) ,passive Bauelemente aber auch andere elektrische Elemente, wie z.B. Heizelemente, Lei¬ ter, Leiterbahnen und konstruktive Elemente - wie z.B. An- Schlusskontakte und dergleichen.The term "component" is to be understood widely in the context of the present invention and generally includes circuit elements such as semiconductors (eg power transistors and diodes), integrated components (ICs), passive components but also other electrical elements such as eg Heating elements, conductors, printed conductors and structural elements - such as e.g. On closing contacts and the like.
Derartige Bauteile werden oft in hoher Packungs- bzw. Leis¬ tungsdichte betrieben und setzen elektrische Energie in Wär¬ meenergie um. Diese führt zu einer Erwärmung der Bauteile, die zu einer Funktionsbeeinträchtigung und ungünstigstenfalls zu einer Zerstörung der Bauteile führen kann. Deshalb muss für eine zuverlässige Abfuhr der betriebsgemäß entstehenden ,Such components are often operated in high packing or power density and convert electrical energy into heat energy. This leads to a heating of the components, which can lead to a functional impairment and at worst to a destruction of the components. Therefore, for a reliable dissipation of the operational arising .
Wärme gesorgt sein. Andererseits muss das Bauteil häufig aus schaltungstechnischen Gründen elektrisch isoliert sein.Heat to be taken care of. On the other hand, the component must often be electrically isolated for circuit engineering reasons.
In anderen Anwendungen ist es erwünscht, von einem Bauele- ment, z.B. einer elektrischen Heizung, die isoliert von einem Wärme empfangenden Bauteil angeordnet ist, einen Wärmefluss mit geringem Wärmewiderstand zu dem Bauteil zu realisieren.In other applications it is desirable to use a component, e.g. an electric heater, which is arranged isolated from a heat-receiving component, to realize a heat flow with low thermal resistance to the component.
Aus der US-Patentschrift 5,559,374 gehen eine elektrische An- Ordnung der eingangs genannten Art und ein Verfahren zu deren Herstellung hervor. Die bekannte Anordnung umfasst ein metal¬ lisches Substrat, auf dessen Oberseite durch sog. Thermoset- ting unter Druck und Wärme eine mehrlagige Folie auflaminiert ist. Diese besteht aus einer oberseitigen Kupferfolie und ei- ner darunter liegenden Trägerfolie aus Kunststoff. Beim Auf- laminieren der mehrlagigen Folie. bildet der Kunststoff eine isolierende Schicht. In der Kupferfolie können anschließend durch Photoätzen Kupferstrukturen erzeugt werden, die Monta¬ gebereiche und Leiterbahnen bilden. Durch Reflow-Lötung sind in den Montagebereichen auf den Kupferstrukturen Dickschicht-US Pat. No. 5,559,374 discloses an electrical arrangement of the type mentioned in the introduction and a method for the production thereof. The known arrangement comprises a metallic substrate, on the upper side of which a multilayer film is laminated by means of so-called thermo-setting under pressure and heat. This consists of an upper-side copper foil and an underlying plastic carrier foil. When laminating the multilayer film. the plastic forms an insulating layer. In the copper foil, photo-etching can then be used to produce copper structures which form mounting regions and interconnects. Reflow soldering in the mounting areas on the copper structures produces thick film
Leiterbahnen ausgebildet, mit denen mittels des Reflow-Löt- Prozesses Kupferplättchen verlötet sind, die für einen hohen Stromfluss ausgelegt sind. Die Kupferplättchen dienen mit in¬ tegralen Fortsätzen zum externen Anschluss an leistungsseiti- ge Hochstromleitungen. Auf die Kupferplättchen sind Bauteile in Form von Leistungshalbleitern wie z.B. IGBTs aufgelötet.Conductors are formed, with which by means of the reflow soldering process copper plates are soldered, which are designed for a high current flow. The copper plates serve with in¬ tegralen extensions for external connection to power-side high current lines. On the copper plates are components in the form of power semiconductors such. Soldered IGBTs.
Die Herstellung dieser bekannten elektrischen Anordnung ist aufwendig. Da die Leistungs-Bauteile während ihrer Schaltvor- gänge hohe Leistungsspitzen und damit erhebliche in Verlust- wärme umgesetzte Verlustleitungen generieren, besteht die Notwendigkeit, die thermischen Auswirkungen der Verlustlei¬ tungen abzufangen. Zwar sieht die bekannte Anordnung zur Wärmeabfuhr bzw. Küh¬ lung der Bauteile ein entsprechend dimensioniertes, metalli- sches Kühlelement vor, gegenüber dem die Bauteile jedoch e- lektrisch isoliert sein müssen. Dazu dient die genannte iso¬ lierende Kunststoff-Schicht. Diese hat jedoch einen ver¬ gleichsweise hohen Wärmewiderstand, durch den der Wärmestrom zum Substrat und damit die Wärmeabfuhr limitiert sind, und begrenzt durch ihre maximale Einsatztemperatur die zulässige Wärme- bzw. Temperatureinbringung (auch während des Herstel¬ lungsprozesses) . Auch müssen etwa schaltungstechnisch erfor¬ derliche passive Bauteile - wie z.B. Widerstände oder Induk¬ tivitäten - isoliert angeordnet und ggf. gekühlt werden. Dies ist mit zusätzlichem Aufwand und mit entsprechenden Kosten verbunden.The preparation of this known electrical arrangement is expensive. Since the power components generate high power peaks during their switching operations and thus considerable loss lines converted into heat loss, there is a need to intercept the thermal effects of the loss lines. Although the known arrangement for heat dissipation or cooling of the components provides a suitably dimensioned, metallic cooling element, against which the components must, however, be electrically insulated. The aforementioned iso¬ lierende plastic layer is used for this purpose. However, this has a comparatively high thermal resistance, by means of which the heat flow to the substrate and thus the heat dissipation are limited, and limits the permissible heat or temperature introduction (also during the production process) due to its maximum operating temperature. Also, for example, circuitry-required passive components-such as resistors or inductors-must be insulated and, if necessary, cooled. This is associated with additional effort and costs.
Auf dem Gebiet der elektrischen Schaltungstechnik und insbe¬ sondere der Leistungshalbleiterelektronik verstärkt sich der Kostendruck kontinuierlich. Die einfache, kostengünstige und rationelle Herstellbarkeit von elektrischen Anordnungen ist deshalb ein zunehmend wichtiges Erfolgskriterium.In the field of electrical circuit technology and in particular the power semiconductor electronics, the cost pressure increases continuously. The simple, cost-effective and rational manufacturability of electrical arrangements is therefore an increasingly important success criterion.
Aufgabe der vorliegenden Erfindung ist daher eine Anordnung und ein Verfahren zu ihrer Herstellung anzugeben, die bei be¬ sonders hohen maximal zulässigen Betriebstemperaturen auch im Bereich komplizierter Substrat-Topologien einfach und kosten¬ günstig herstellbar ist.The object of the present invention is therefore to specify an arrangement and a method for its production which can be produced simply and inexpensively at particularly high maximum permissible operating temperatures even in the area of complicated substrate topologies.
Diese Aufgabe wird hinsichtlich der Anordnung erfindungsgemäß durch eine Anordnung mit den Merkmalen des Anspruchs 1 und hinsichtlich des Verfahrens durch ein Verfahren mit den Merk¬ malen des Anspruchs 22 gelöst. Danach umfasst die elektrische Anordnung ein Substrat, auf dem mindestens ein elektrisches Bauteil, z.B. ein Leistungs- halbleiter wie ein IGBT, und/oder eine Leiterbahn angeordnet sind/ist. Auf dem Substrat ist mindestens eine kaltgasge- spritzte Metallisierung aufgebracht. Vorteilhafte Fortbildun¬ gen der Erfindung sind Gegenstand der Unteransprüche und ge¬ hen aus der nachfolgenden Beschreibung und den Ausführungs- beispielen hervor.With regard to the arrangement, this object is achieved according to the invention by an arrangement having the features of claim 1 and with regard to the method by a method having the features of claim 22. Thereafter, the electrical arrangement comprises a substrate on which at least one electrical component, for example a power semiconductor such as an IGBT, and / or a conductor track is or is arranged. At least one cold gas sprayed metallization is applied to the substrate. Advantageous developments of the invention are the subject of the subclaims and are apparent from the following description and the exemplary embodiments.
Ein wesentlicher Aspekt der Erfindung besteht also darin, dass mittels an sich bekanntem Kaltgasspritzen eine Metalli¬ sierung zur Verschaltung und/oder Aufnahme bzw. Fixierung e- lektrischer oder mechanischer Bauteile dient.An essential aspect of the invention is therefore that by means of known cold gas spraying a Metalli¬ tion for interconnection and / or recording or fixing e- lektrischer or mechanical components is used.
Beim Kaltgasspritzen wird der Beschichtungswerkstoff - im Un¬ terschied zu bekannten gängigen Spritzverfahren - nicht ange¬ schmolzen oder aufgeschmolzen. Vielmehr wird der Beschich- tungswerkstoff in feiner oder feinster Pulverform - die Pul¬ verpartikel haben eine Größe von z.B. 1 μm bis 50 μm - in ei¬ nem auf .einige 100 0C aufgeheizten Gasstrom auf die zu be¬ schichtende Oberfläche beschleunigt . Die Pulverpartikel er¬ reichen dabei Geschwindigkeiten von etwa 300 m/s bis 1200 m/s. Der Gasstrom kann bevorzugt eine anti-oxidierende Wir¬ kung auf die Partikel haben.During cold gas spraying, the coating material is not molten or melted, in contrast to known common spraying processes. Rather, the coating material in fine or very fine powder form - the powder particles have a size of, for example, 1 .mu.m to 50 .mu.m - accelerated in ei¬ nem to. Some 100 0 C heated gas stream to be¬ coated surface. The powder particles reach speeds of about 300 m / s to 1200 m / s. The gas stream may preferably have an anti-oxidizing effect on the particles.
Durch ihre dadurch vergleichsweise hohe kinetische Energie verformen sich die Partikel beim Aufprall auf das Substrat und bilden darauf eine dichte und fest haftende Schicht.As a result of their comparatively high kinetic energy, the particles deform on impact on the substrate and form a dense and firmly adhering layer thereon.
Durch die hohe kinetische Energie werden vorteilhafterweise auch etwaige auf dem Substrat gebildete Oberflächenoxide auf¬ gebrochen und durch Mikroreibung zwischen den Partikeln eine solche Temperaturerhöhung bewirkt, dass an den Berührungsflä¬ chen Mikroverschweißungen entstehen.Due to the high kinetic energy, any surface oxides formed on the substrate are advantageously also broken up and a micro-friction between the particles results Such an increase in temperature causes microwelding to occur at the contact surfaces.
Dadurch erreicht man äußerst reine Metallisierungen, die in ihren elektrischen und thermischen Eigenschaften herkömmlich hergestellten - z.B. gewalzten - Materialien nicht nachste¬ hen.This achieves extremely pure metallizations which are conventionally produced in their electrical and thermal properties - e.g. Rolled - not nachste¬ materials.
Im Vergleich zu herkömmlichen Lotverbindungen zeigt sich die erfindungsgemäße Anordnung in ihren elektrischen, thermischen und mechanischen Eigenschaften überlegen: So zeigen Lotver¬ bindungen schon bei einer Erwärmung über ca. 115 0C eine sig¬ nifikante Änderung ihrer mechanischen Eigenschaften - die er¬ findungsgemäße Anordnung ist dagegen in diesen Temperaturbe- reichen mechanisch noch hoch stabil .Compared to traditional solder joints, the inventive arrangement is superior in its electrical, thermal and mechanical properties: To view Lotver¬ bonds already when heated above about 115 0 C, a sig¬ nifikante change their mechanical properties - which he find contemporary arrangement On the other hand, they are still mechanically stable in these temperature ranges.
Ein bei der erfindungsgemäßen Anordnung besonders vorteilhaf¬ ter Aspekt ist, dass mittels Kaltgasspritzen nicht nur dünne, sondern auch vergleichsweise größere Schichtdicken oder Strukturen realisierbar sind. Dickere Strukturen sind hin¬ sichtlich der Wärmeleitung und der Minimierung des elektri¬ schen Leitungswiderstandes vorteilhaft.A particularly advantageous aspect in the arrangement according to the invention is that not only thin, but also comparatively larger layer thicknesses or structures can be realized by means of cold gas spraying. Thicker structures are advantageous with regard to the heat conduction and the minimization of the electrical line resistance.
Damit lassen sich auch Anordnungen realisieren, die sich durch eine besonders homogene, belastbare und auch an Berei¬ chen mit komplexen Geometrien zuverlässige Metallisierung auszeichnen.This arrangement can also be realized, which are characterized by a particularly homogeneous, reliable and even on Berei¬ surfaces with complex geometries reliable metallization.
Ein weiterer wesentlicher Aspekt der Erfindung besteht darin, dass eine Vielzahl von Ausgangsmaterialien verwendbar ist, die z.B. einen vergleichsweise geringen Wärmewiderstand haben und damit einen effektiven Wärmefluss z.B. von Bauteilen zu dem Substrat (Wärmeabfuhr) oder aber von einer Heizeinrich- tung zu einem zu erwärmenden Bauteil (Wärmezufuhr) auf dem Substrat ermöglichen.Another essential aspect of the invention is that a large number of starting materials can be used which, for example, have a comparatively low heat resistance and thus an effective heat flow, for example of components to the substrate (heat dissipation) or of a heating device. tion to a component to be heated (heat) on the substrate allow.
Durch die Wahl des kaltzuspritzenden Ausgangsmaterials können also unmittelbar die Eigenschaften der Metallisierung beein- flusst werden. So ermöglicht z.B. die Wahl von Kupfer, Silber oder Gold als Ausgangsmaterial die Realisierung äußerst nie- derohmiger, gut Wärme leitender Metallisierungen. Solche nie- derohmigen Metallisierungen sind insbesondere im Hochstrombe- reich bei niedrigen Betriebsspannungen - wie z.B. in der Kraftfahrzeugtechnik - vorteilhaft.By choosing the starting material to be cold sprayed, the properties of the metallization can thus be directly influenced. Thus, e.g. the choice of copper, silver or gold as starting material the realization of extremely low-ohmic, good heat-conducting metallizations. Such low-resistance metallizations are especially in the high current range at low operating voltages - such. in automotive engineering - advantageous.
Die Metallisierung kann bevorzugt auch selbst eine Leiterbahn bilden. Nach einer weiteren bevorzugten Ausgestaltung der Er- findung der Erfindung bildet diese Leiterbahn eine Fläche, • die zur elektromagnetischen Abschirmung gegen EMV-Störungen dient.The metallization may also preferably itself form a conductor track. According to a further preferred embodiment of the invention, this conductor forms a surface which serves for electromagnetic shielding against EMC interference.
Die Metallisierung kann zur Ausbildung von elektrischen Wi- derständen bevorzugt aus einem Widerstandsmaterial wie z.B. Konstantan oder Manginan bestehen. Die so gebildeten Wider¬ standsbereiche sind kostengünstig und einfach realisierbar und zeichnen sich aufgrund ihrer Nähe zum Substrat durch eine gute thermische Anbindung an das Substrat aus. Die Wider- standswerte können durch entsprechende Gestaltung derThe metallization may be used to form electrical resistances, preferably of a resistive material, such as, e.g. Konstantan or Manginan exist. The resistor regions thus formed are inexpensive and easy to implement and, because of their proximity to the substrate, are characterized by a good thermal connection to the substrate. The resistance values can be determined by appropriate design of the
Schichtdicke und/oder Schichtgeometrie zusätzlich an die je¬ weiligen Erfordernisse angepasst werden.Layer thickness and / or layer geometry are additionally adapted to the respective requirements.
Das unter der Bezeichnung Konstantan bekannte Material ist üblicherweise eine Legierung aus 55% Kupfer und 45% Nickel, die sich durch einen in einem weiten Temperaturbereich kon¬ stanten elektrischen Widerstand auszeichnet. Eine Legierung (86% Kupfer/12% Mangan/2% Nickel) mit einem ähnlich geringen Temperaturkoeffizienten ist unter der Bezeichnung Manganin handelsüblich.The material known under the name Konstantan is usually an alloy of 55% copper and 45% nickel, which is characterized by a constant in a wide temperature range electrical resistance. An alloy (86% copper / 12% manganese / 2% nickel) with a similar low Temperature coefficient is commercially available under the name Manganin.
Die Metallisierung kann bevorzugt auch ein Ventilmetall oder eine Ventilmetalllegierung sein, das bzw. die bevorzugt zu¬ mindest teilweise anodisch oxidiert ist.The metallization can preferably also be a valve metal or a valve metal alloy which is or preferably at least partially anodically oxidized.
Dies ist hinsichtlich der Isolations-Eigenschaften von Vor¬ teil. Unter Ventilmetallen sind allgemein Metalle zu verste- hen, die sich bei anodischer Polung mit einer Oxidschicht ü- berziehen, die auch bei hohen Spannungen nicht leitend wird (durchschlägt) . Somit können - insbesondere für einen Mehr¬ schichtaufbau - gezielt Isolationsschichten auf einer zuvor kaltgespritzen Metallisierung erzeugt werden. Als Ventilme- tall werden bevorzugt Aluminium, Magnesium, Titan, Zirkonium oder Tantal und als Ventilmetalllegierung AlCu, AlCuMg, AlMg, AlZnMg, AlZnMgCu, AlSiCu, AlMgSi, AlSi, AlMn oder AlMgMn ver¬ wendet.This is advantageous in terms of the insulation properties. Valve metals are generally understood to mean metals which, in the case of anodic polarity, overlap with an oxide layer which does not become conductive (strikes through) even at high voltages. Thus, in particular for a multi-layer structure, insulation layers can be selectively produced on a previously cold-sprayed metallization. The valve metal used is preferably aluminum, magnesium, titanium, zirconium or tantalum and as the valve metal alloy AlCu, AlCuMg, AlMg, AlZnMg, AlZnMgCu, AlSiCu, AlMgSi, AlSi, AlMn or AlMgMn.
Die Metallisierung kann auf einen elektrischen Isolator, wie z.B. ein keramisches Substrat gespritzt sein. Bevorzugt wird ein Substrat verwendet, das aus einem vergleichsweise weichen Grundkörper bzw. Grundmaterial (z.B. Kunststoff) besteht, in das harte Füllstoffe oder Füllkörper (z.B. Keramikpulver) eingebracht sind. Das weiche Grundmaterial wird während des Kaltgasspritzens zumindest teilweise abgetragen, so dass die eigentliche Beschichtung in einem stärkeren Maße mit den har¬ ten Füllstoffen in Verbindung gelangt. Dadurch ist eine be¬ sonders feste und harte Beschichtung realisierbar.The metallization may be applied to an electrical insulator such as e.g. be sprayed a ceramic substrate. Preferably, a substrate is used which consists of a relatively soft base material (e.g., plastic) into which hard fillers or packing (e.g., ceramic powder) are incorporated. The soft base material is at least partially removed during the cold gas spraying, so that the actual coating comes into contact to a greater extent with the har¬ th fillers. As a result, a particularly solid and hard coating can be realized.
Um bei Verwendung eines leitenden Substrats bedarfsweise eine zuverlässige Isolation zum Substrat zu gewährleisten, ist nach einer vorteilhaften Ausgestaltung der Erfindung zwischen Substratoberfläche und Metallisierung eine isolierende Schicht vorgesehen.In order to ensure a reliable insulation to the substrate when required using a conductive substrate, according to an advantageous embodiment of the invention between Substrate surface and metallization provided an insulating layer.
Besonders bevorzugt kann in diesem Zusammenhang Aluminium auf einer Keramik (z.B. SiC oder A12O3) aufgebracht und zur Bil¬ dung einer Isolationsschicht - bevorzugt durch Plasma Elekt¬ rolytische Oxidation (PEO) - oxidiert werden. Auf dieser Iso¬ lationsschicht kann dann eine Metallisierung aufgespritzt werden, auf der wiederum z.B. ein elektrisches Bauteil mon- tiert und kontaktiert werden kann. Alternativ kann auch diese Metallisierung zur Bildung einer Isolationsschicht oxidiert werden. Auf diese Weise ist ein mehrschichtiger Aufbau - auch unter Verwendung verschiedener Materialien - möglich, um thermisch induzierte Spannungen besser auszugleichen und ein verbessertes mechanisches Verhalten zu erreichen.In this connection, particularly preferably, aluminum may be applied to a ceramic (for example SiC or A12O3) and oxidized to form an insulating layer, preferably by plasma electrochemical oxidation (PEO). A metallization can then be sprayed onto this insulating layer, on which in turn e.g. an electrical component can be mounted and contacted. Alternatively, this metallization can also be oxidized to form an insulation layer. In this way, a multi-layered construction - also using different materials - is possible to better compensate for thermally induced stresses and to achieve an improved mechanical behavior.
Hier spielt die Erfindung einen ihrer besonderen Vorteile aus, nämlich die vergleichsweise geringe thermische Belastung des Substrats. Da die Metallisierung mit nur sehr geringer Wärmeeinbringung verbunden ist, ergeben sich kaum thermisch induzierte mechanische Spannungen und damit keine Durchbie¬ gungen oder Verformungen des Substrats (wie z.B. bei der her¬ kömmlichen DCB (Direct Copper Bonding) -Technologie) . Deshalb können erfindungsgemäß auch Anordnungen mit vergleichsweise großen Oberflächen metallisiert werden, was in traditioneller Technik einen wesentlich größeren Aufwand erfordert. Eine weitere Reduzierung von thermischen Belastungen lässt sich erreichen, indem mechanische Puffer - z.B. Molybdän - im Kaltgasspritzverfahren als Zwischenschicht aufgebracht wer- den.Here, the invention plays one of its particular advantages, namely the comparatively low thermal load of the substrate. Since the metallization is associated with only a very small amount of heat input, hardly any thermally induced mechanical stresses arise and thus no deflections or deformations of the substrate (as for example in conventional DCB (Direct Copper Bonding) technology). Therefore, according to the invention, it is also possible to metallize arrangements with comparatively large surfaces, which requires considerably more effort in traditional technology. Further reduction of thermal stress can be achieved by using mechanical buffers - e.g. Molybdenum - be applied as an intermediate layer in the cold gas spraying process.
Bevorzugt kann die Metallisierung mindestens eine Ausnehmung oder geometrische Vertiefung - kurz als ein Senkloch bezeich- net - ausfüllen. Damit ist die mechanische Verbindung zwi¬ schen Substrat und Metallisierung verbessert, bedarfsweise auch eine Kontaktierung z.B. tieferer Substratbereiche oder eine Verbindung eines elektrisch isoliert auf dem Substrat angeordneten Bauteils mit dem Substrat möglich und die Wärme¬ leitung in das bzw. aus dem Volumen des Substrats verbessert.The metallization may preferably have at least one recess or geometric depression-referred to as a countersunk hole for short. net - fill out. In this way, the mechanical connection between the substrate and the metallization is improved and, if required, contacting of deeper substrate regions or connection of a component electrically insulated on the substrate with the substrate is possible and the heat conduction into or out of the volume of the substrate is improved ,
Von der Metallisierung kann bzw. können als integrale Be¬ standteile auch ein oder mehrere Anschlusskontakte gebildet sein. Dies kann fertigungstechnisch bevorzugt dadurch reali¬ siert sein, dass mittels einer während des Kaltgasspritzpro- zesses aufgebrachten Maske z.B. ein hoch stehender Stift oder Kontaktfortsatz ausgebildet wird.From the metallization, one or more connection contacts can also be formed as integral constituents. In terms of manufacturing technology, this can preferably be realized by virtue of the fact that by means of a mask applied during the cold gas spraying process, e.g. a high standing pin or contact extension is formed.
Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung ist der Metallisierung ein Zusatzmaterial, beispielsweise Si¬ lizium, Keramik und/oder Kohlenstoff, beigefügt. Damit können vorteilhafterweise Parameter - wie z.B. die Härte, die Leit¬ fähigkeit oder der thermische Ausdehnungskoeffizient - der Metallisierung je nach Anwendungsfall und Bedarf eingestellt werden.According to a further advantageous embodiment of the invention, the metallization is an additional material, for example silicon, ceramic and / or carbon, attached. Thus, advantageously parameters - such as e.g. the hardness, the Leit¬ ability or the thermal expansion coefficient - the metallization depending on the application and needs can be adjusted.
Ein weiterer wesentlicher Vorteil der Erfindung besteht - wie eingangs schon erwähnt - darin, dass mit geringem Aufwand und geringer thermischer Belastung des Substrats bzw. der darauf ausgebildeten Strukturen auch vergleichsweise dicke oder mas¬ sive Metallisierungen erzeugt werden können.Another essential advantage of the invention consists - as already mentioned - in that comparatively thick or massive metallizations can be produced with little effort and low thermal stress on the substrate or the structures formed thereon.
Vor diesem Hintergrund ist eine Ausgestaltung der Erfindung bevorzugt, bei der die Metallisierung eine elektrische Ver¬ bindung zwischen zwei Leitern bildet, von denen zumindest ein Leiter auf dem Substrat angeordnet ist. Die Metallisierung stellt dabei eine material- und ggf. formschlüssige Verbin- düng her. Diese Verbindung hat auch den Vorteil, dass sie ei¬ nen sehr großen Anwendungsbereich hat, äußerst niederohmig, gut Wärme leitend und dennoch thermisch sowie mechanisch sehr stabil ist . Sie ist deshalb auch für Anwendungsfälle mit sehr hohen elektrischen Strömen bestens geeignet.Against this background, an embodiment of the invention is preferred in which the metallization forms an electrical connection between two conductors, of which at least one conductor is arranged on the substrate. The metallization represents a material and possibly a positive connection. fertilize. This compound also has the advantage that it has a very wide range of applications, is extremely low-resistance, good heat-conducting and yet thermally and mechanically very stable. It is therefore also ideally suited for applications with very high electric currents.
Bevorzugt kann einer der Leiter als Anschlusskontakt, z.B. als Anschlussstift oder Öse, ausgestaltet sein. Um äußere me¬ chanische Belastungen sich nicht auf die Metallisierung bzw. die Verbindung auswirken zu lassen, ist bevorzugt vorgesehen, dass der Anschlusskontakt mechanisch von einem Gehäuse ge¬ stützt ist.Preferably, one of the conductors may be used as a terminal, e.g. be designed as a pin or eyelet. In order to prevent external mechanical stresses from having an effect on the metallization or the connection, it is preferably provided that the connection contact is mechanically supported by a housing.
Eine fertigungstechnisch vorteilhafte erfindungsgemäße Anord- nung, die für eine besonders kompakte und geschützte Anord¬ nung eines Bauteils auf einem Substrat bevorzugt ist, sieht vor, dass auf dem Substrat eine Basis-Metallisierung aufge¬ bracht ist. Auf dieser ist mindestens ein elektrisches Bau¬ teil angeordnet und das Bauteil ist zumindest teilweise von einer Verschaltungsplatine umgeben. Die Metallisierung reali¬ siert dabei eine elektrische Verbindung zwischen Bauteil und Verschaltungsplatine. Besonders bevorzugt kann das Bauteil in einer Ausnehmung der Verschaltungsplatine platziert und das Bauteil von einer Isolierung umgeben sein.A production-wise advantageous arrangement according to the invention, which is preferred for a particularly compact and protected arrangement of a component on a substrate, provides that a base metallization is applied to the substrate. On this at least one electrical Bau¬ part is arranged and the component is at least partially surrounded by a circuit board. The metallization realizes an electrical connection between the component and the circuit board. Particularly preferably, the component can be placed in a recess of the circuit board and the component to be surrounded by insulation.
Die Isolierung kann von einem abdichtenden und isolierenden Material, z.B. einem Kunststoff oder Harz, gebildet sein. Be¬ vorzugt kann die Isolierung das Bauteil ringartig umgeben, so dass eine obere Öffnung oder Ausnehmung besteht, durch die die Metallisierung appliziert werden kann, um das Bauteil in gewünschter Weise zu kontaktieren. Die erfindungsgemäße Anordnung kann auch dadurch ausgestaltet werden, dass die kaltgespritzte Metallisierung mehrere Lei¬ terbahnen auf verschiedenen räumlichen Ebenen verbindet. Nach einer diesbezüglich bevorzugten Weiterbildung der Erfindung ist vorgesehen, dass die Metallisierung einen auf dem Sub¬ strat angeordneten elektrischen Leiter in einer ersten Ebene mit einem elektrischen Leiter verbindet, der in einer zweiten Ebene auf dem Substrat angeordnet ist .The insulation may be formed by a sealing and insulating material, eg a plastic or resin. Preferably, the insulation can surround the component like a ring, so that there is an upper opening or recess through which the metallization can be applied in order to contact the component in the desired manner. The arrangement according to the invention can also be configured in that the cold-sprayed metallization connects a plurality of conductor tracks on different spatial levels. According to a preferred embodiment of the invention, it is provided that the metallization connects an electrical conductor arranged on the substrate in a first plane to an electrical conductor which is arranged in a second plane on the substrate.
Die Erfindung betrifft außerdem ein Verfahren zum Herstellen einer elektrischen Anordnung mit dem Ziel, eine elektrisch leitende Schicht oder einen leitenden Verbindungsbereich mit hervorragenden elektrischen und thermischen Leitungseigen¬ schaften bei hoher thermischer und mechanischer Stabilität weitgehend belastungsfrei auf einem Substrat zu applizieren.The invention also relates to a method for producing an electrical arrangement with the aim of applying an electrically conductive layer or a conductive connection region with excellent electrical and thermal conductivity properties with high thermal and mechanical stability to a substrate substantially free of stress.
Diese Aufgabe wird erfindungsgemäß gelöst, indem auf einem Substrat ein Bauteil und/oder eine Leiterbahn angeordnet wird/werden und durch Kaltgasspritzen eine Metallisierung aufgebracht wird, die das Bauteil und/oder die Leiterbahn e- lektrisch kontaktiert.This object is achieved according to the invention by arranging a component and / or a printed conductor on a substrate and applying a metallization by cold gas spraying, which contacts the component and / or the printed conductor electrically.
Bevorzugt wird dabei das Substrat während des Kaltgassprit- zens maskiert; so lassen sich besonders gut dosiert gezielt Metallisierungen an gewünschten Substratbereichen aufbringen.In this case, the substrate is preferably masked during cold gas spraying; In this way, it is possible to apply targeted targeted metallization to desired substrate areas.
Zur fertigungstechnisch einfachen Herstellung von integral ausgeformten, kompakt angeordneten Anschlusskontakten sieht eine vorteilhafte Fortbildung des erfindungsgemäßen Verfah- rens vor, dass das Substrat mit seiner Oberseite in Bezug auf eine Stützebene eines Trägers fluchtend ausgerichtet wird, mindestens ein elektrischer Anschlusskontakt durch Kaltgas- spritzen einer Metallisierung ausgebildet wird, wobei der An- Schlusskontakt sich mindestens teilweise auf der Stützebene erstreckt, und der Träger nach Fertigstellung des Anschluss- kontakts entfernt wird.For production-technically simple production of integrally molded, compactly arranged connection contacts, an advantageous further development of the method according to the invention provides that the substrate is aligned with its upper surface in relation to a support plane of a support, at least one electrical connection contact is formed by cold gas spraying of a metallization which is the Closing contact extends at least partially on the support plane, and the carrier is removed after completion of the terminal contact.
Ausführungsbeispiele der Erfindung werden nachfolgend anhand einer Zeichnung näher erläutert. Dabei sind gleiche oder ent¬ sprechende Elemente mit gleichen Bezugszeichen bezeichnet. Es zeigen (überwiegend im Längsschnitt) :Embodiments of the invention will be explained in more detail with reference to a drawing. Identical or corresponding elements are designated by the same reference numerals. It show (mainly in longitudinal section):
Figur 1 den prinzipiellen Aufbau einer Einrichtung zur Her¬ stellung einer erfindungsgemäßen Anordnung und zur Durchführung des erfindungsgemäßen Verfahrens,FIG. 1 shows the basic structure of a device for producing an arrangement according to the invention and for carrying out the method according to the invention,
Figur 2 eine gegenüber Figur 1 modifizierte Einrichtung zur Herstellung einer Anordnung mit einer Verbindung,FIG. 2 shows a device modified relative to FIG. 1 for producing a device with a connection;
Figur 3 eine Anordnung mit einem aus einer Verbindungsebene herausragenden Anschlusskontakt,FIG. 3 shows an arrangement with a connection contact protruding from a connection plane,
Figur 4 eine gegenüber Figur 3 abgewandelte Anordnung,FIG. 4 shows a modified arrangement compared to FIG. 3,
Figur 5 eine Anordnung mit einem Bauteil,FIG. 5 shows an arrangement with a component,
Figur 6 eine weitere Anordnung mit einem Bauteil,FIG. 6 shows a further arrangement with a component,
Figur 7 eine weitere Anordnung mit einem isoliert und ge¬ schützt angeordneten Bauteil,FIG. 7 shows a further arrangement with a component that is insulated and protected,
Figur 8 eine Anordnung mit einer elektrischen Abschirmung,FIG. 8 shows an arrangement with an electrical shield,
Figur 9 eine Anordnung mit einer Verbindung von zwei Lei¬ tern in unterschiedlichen Ebenen, Figur 10 eine Anordnung mit Kontaktanschlüssen undFIG. 9 shows an arrangement with a connection of two conductors in different planes, Figure 10 shows an arrangement with contact terminals and
Figur 11 die Verhältnisse bei Verwendung eines Substrats aus einem weichen Basismaterial, das mit harten Körnern verfüllt ist.Figure 11 shows the conditions when using a substrate made of a soft base material, which is filled with hard grains.
Nach Figur 1 strömt beim Kaltgasspritzen ein anti-oxidierend wirkendes Fördergas 1 mit einem Druck von 15 bis 35 bar in eine Einrichtung 2 und wird über Heizelemente 3 auf einige 1000C erwärmt. Über eine Pulverzufuhr 4 wird als Ausgangsma¬ terial (Beschichtungswerkstoff) 5 Kupfer in Form feinster Kupferpartikel 6 zugeführt . Diese werden im Unterschied zu bekannten gängigen Spritzverfahren nicht angeschmolzen oder aufgeschmolzen, sondern durch den Hochdruck-Gasstrom in fei- ner Pulverform aus einer Düse 7 als Strahl auf eine Oberseite 8 eines Keramik-Substrats 9 beschleunigt. Die Pulverpartikel erreichen dabei Geschwindigkeiten von etwa 300 bis 1200 m/s.According to FIG. 1, during cold gas spraying an anti-oxidizing conveying gas 1 flows at a pressure of 15 to 35 bar into a device 2 and is heated to a few 100 ° C. by means of heating elements 3. Via a powder feed 4, copper is supplied in the form of the finest copper particles 6 as the starting material (coating material). These are not melted or melted in contrast to known common spraying method, but accelerated by the high-pressure gas flow in a fine powder form from a nozzle 7 as a jet on an upper surface 8 of a ceramic substrate 9. The powder particles reach speeds of about 300 to 1200 m / s.
Die vergleichsweise hohe kinetische Energie verformt die Par- tikel bei ihrem Aufprall auf die Oberseite 8, auf der sich dadurch eine feste "verkrallte" Kupferschicht in Form einer Metallisierung 10 bildet. Die Metallisierung bildet in dieser einfachen Ausführungsform eine Leiterbahn 11, die zur elekt¬ rischen Kontaktierung und/oder Wärmeableitung von einem nicht gezeigten Bauteil dienen kann.The comparatively high kinetic energy deforms the particles when they impact the upper side 8, thereby forming a solid "entangled" copper layer in the form of a metallization 10. The metallization forms in this simple embodiment, a conductor 11, which can serve for elekt¬ cal contacting and / or heat dissipation from a component, not shown.
Die Metallisierung 10 kann dabei ein andeutungsweise gezeig¬ tes Senkloch 9a in dem Substrat 9 ausfüllen, um beispielswei¬ se eine verbesserte Wärmeleitung aus dem Substrat zu reali- sieren.In this case, the metallization 10 can fill a suggestively lowered recess 9a in the substrate 9 in order, for example, to realize an improved heat conduction from the substrate.
Bei Wahl eines Widerstandsmaterials IIa wie z.B. Konstantan oder Manginan als Ausgangsmaterial 5 können auch unmittelbar elektrische Widerstände auf dem Substrat ausgebildet werden, die sich dadurch durch eine gute thermische Anbindung an das Substrat und so durch eine gute Abfuhr der im Widerstand ent¬ stehenden Wärme auszeichnen.When choosing a resistance material IIa such as Konstantan or manginane as starting material 5 can also directly electrical resistances are formed on the substrate, which are characterized by a good thermal connection to the substrate and thus by a good dissipation ent¬ standing in the heat resistance.
Figur 2 zeigt eine gegenüber Figur 1 modifizierte Einrich¬ tung, bei der die Bestrahlung der Oberfläche 8 des Substrats 9 mit Partikeln 6 aus der Düse 7 in vertikaler Richtung 12 erfolgt. Hier sind auf der Oberseite 8 zwei Leiterbahnen 14, 15 angeordnet. Diese werden durch die kaltgespritzte, gut leitende und mechanische beständige Verbindung 16 elektrisch miteinander verbunden. Das Substrat ist hier als Isolator (Keramik) ausgeführt. Es ist aber auch denkbar, das Substrat aus einem leitenden Material (z.B. Aluminium) herzustellen und eine Isolation zum Substrat dadurch zu realisieren, dass auf dem Substrat eine isolierende Schicht vorgesehen wird.FIG. 2 shows a device modified with respect to FIG. 1, in which the irradiation of the surface 8 of the substrate 9 with particles 6 takes place from the nozzle 7 in the vertical direction 12. Here, two conductor tracks 14, 15 are arranged on the upper side 8. These are electrically connected to one another by the cold-sprayed, highly conductive and mechanical resistant connection 16. The substrate is designed here as an insulator (ceramic). However, it is also conceivable to manufacture the substrate from a conductive material (for example aluminum) and to realize an insulation to the substrate by providing an insulating layer on the substrate.
Besonders bevorzugt kann in diesem Zusammenhang Aluminium auf einer Keramik (z.B. SiC oder A12O3) aufgebracht und zur BiI- düng einer Isolationsschicht - bevorzugt durch Plasma Elekt¬ rolytische Oxidation (PEO) - oxidiert werden. Auf dieser Iso¬ lationsschicht kann dann eine Metallisierung aufgespritzt werden, auf der wiederum z.B. ein elektrisches Bauteil mon¬ tiert und kontaktiert werden kann. Alternativ kann auch diese Metallisierung zur Bildung einer Isolationsschicht oxidiert werden. Auf diese Weise ist ein mehrschichtiger Aufbau mög¬ lich.In this connection, particularly preferably aluminum can be applied to a ceramic (for example SiC or A12O3) and oxidized to form an insulating layer, preferably by plasma electrochemical oxidation (PEO). A metallization can then be sprayed onto this insulating layer, on which in turn e.g. An electrical component can be mounted and contacted. Alternatively, this metallization can also be oxidized to form an insulation layer. In this way, a multilayer construction is possible.
Figur 3 zeigt eine Anordnung mit einem aus einer Verbindungs- ebene herausragenden Anschlusskontakt; hier ist ein elektri¬ scher Leiter 18 als Anschlusselement oder Anschlusskontakt 19 auf dem Substrat 9 angeordnet und mit einem weiteren Leiter 20 durch eine kaltgespritzte Metallisierung 21 verbunden. Der Leiter 18 erstreckt sich dabei rechtwinklig aus der Verbin¬ dungsebene heraus und ist von einem nur schematisch angedeu¬ teten Gehäuse 22 gestützt. Das Gehäuse nimmt damit die auf den Anschlusskontakt wirkenden äußeren mechanischen Kräfte auf und schützt somit die Verbindung. Man erkennt, dass die Metallisierung in Doppelfunktion nicht nur die elektrische Verbindung, sondern auch die mechanische Fixierung des Lei¬ ters 18 auf der Oberseite des Leiters 20 bewirkt.FIG. 3 shows an arrangement with a connection contact projecting from a connection plane; Here, an electrical conductor 18 is arranged as a connection element or connection contact 19 on the substrate 9 and connected to a further conductor 20 by a cold-sprayed metallization 21. Of the Conductor 18 extends at right angles out of the connecting plane and is supported by a housing 22, which is indicated only schematically. The housing thus absorbs the external mechanical forces acting on the terminal contact and thus protects the connection. It can be seen that the metallization in a double function not only effects the electrical connection, but also the mechanical fixation of the conductor 18 on the upper side of the conductor 20.
Figur 4 zeigt eine gegenüber Figur 3 abgewandelte Anordnung, bei der der Leiter 18 mit seinem verbindungsseitigen Ende in derselben Ebene wie der Leiter 20 liegt und über eine kaltge¬ spritzte Metallisierung 23 verbunden und mechanisch auf dem Substrat 9 fixiert ist. Auch hier kann der den Anschlusskon- takt 19 bildende Teil des Leiters 18 durch eine Entlastung oder ein Gehäuse wie in Figur 3 gezeigt gestützt sein.FIG. 4 shows a modified arrangement with respect to FIG. 3, in which the conductor 18 lies with its connection-side end in the same plane as the conductor 20 and is connected via a cold-sprayed metallization 23 and fixed mechanically on the substrate 9. Again, the portion of the conductor 18 forming the terminal contact 19 may be supported by a relief or a housing as shown in FIG.
Figur 5 zeigt eine Anordnung mit einem Substrat 9, auf dem ein elektrischer Leiter 25 aufgebracht ist. Auf dem Leiter 25 befindet sich ein elektrisches Bauteil 26. Um das Bauteil 26 ist ein elektrischer Isolator 27 aus Kunststoff gelegt, der eine abdichtende und isolierende umlaufende Lippe hat . Diese isoliert den Rand des Bauteils und ist im Wesentlichen ring¬ förmig. Im oberen Bereich ist eine Öffnung 28 vorgesehen, durch die die kaltgespritzte Metallisierung 29 dringt und ei¬ ne Verbindung bildet, durch die die Bauteiloberseite mittels integral angeformter Leiterbahn kontaktiert ist.Figure 5 shows an arrangement with a substrate 9, on which an electrical conductor 25 is applied. On the conductor 25 is an electrical component 26. To the component 26 is placed an electrical insulator 27 made of plastic, which has a sealing and insulating circumferential lip. This insulates the edge of the component and is essentially ring-shaped. In the upper area, an opening 28 is provided, through which the cold-sprayed metallization 29 penetrates and forms a connection through which the upper side of the component is contacted by means of an integrally formed conductor track.
Figur 6 zeigt eine weitere, der Ausführung nach Figur 5 ähn- liehe Anordnung mit einem Bauteil. Hier ist auf einem Sub¬ strat oder Trägermaterial 9 eine Metallisierung 30 appli¬ ziert, auf der ein Leistungshalbleiter (Bauteil) 31, z.B. ein IGBT, angeordnet und mit seiner unteren Anschlusselektrode elektrisch leitend verbunden ist. Auch hier ist der Randbe¬ reich des Bauteils 31 zum Schutz und zur Isolierung von einem Isolator 32 abgedeckt. Um das Bauteil und den Isolator ist eine Schaltungsplatine 33 angeordnet, die einen Durchbruch oder eine Ausnehmung 34 für das Bauteil aufweist. Die Ober¬ seite 35 der Platine 33 ist mit an sich bekannter Kupferka- schierung oder Leiterbahnen 36 versehen, mit der das Bauteil 31 durch eine kaltgespritzte Metallisierung 37 elektrisch verbunden ist. Die Metallisierung sorgt auch für eine mecha- nisch feste Fixierung des Bauteils in dieser Anordnung. Auf der Metallisierung 37 kann bevorzugt zur Wärmeableitung ein Kühlelement 38 oder eine Wärmesenke montiert sein.FIG. 6 shows a further arrangement with a component similar to the embodiment according to FIG. Here, a metallization 30 is applied to a substrate or carrier material 9, on which a power semiconductor (component) 31, for example an IGBT, is arranged and with its lower connection electrode is electrically connected. Here, too, the edge region of the component 31 is covered by an insulator 32 for protection and insulation. Around the component and the insulator, a circuit board 33 is arranged, which has an opening or a recess 34 for the component. The upper side 35 of the circuit board 33 is provided with copper chasing or conductor tracks 36 known per se, with which the component 31 is electrically connected by means of a cold-sprayed metallization 37. The metallization also ensures a mechanically fixed fixation of the component in this arrangement. On the metallization 37 may preferably be mounted for heat dissipation, a cooling element 38 or a heat sink.
Figur 7 zeigt eine weitere Anordnung mit einem Substrat oder Trägerelement 9 und mit einem darauf isoliert und geschützt angeordneten Bauteil 40. Das Substrat weist auf seiner Ober¬ seite 8 mindestens zwei voneinander isolierte Leiterbahnen 41, 42 auf. Das Bauteil 40 ist über kleine elektrische Ver¬ bindungselemente 43 mit seiner Unterseite mit der Leiterbahn 42 - z.B. durch Lötung - elektrisch leitend verbunden. DasFIG. 7 shows a further arrangement with a substrate or carrier element 9 and with a component 40 insulated and protected thereon. On its upper side 8, the substrate has at least two interconnects 41, 42 insulated from one another. The component 40 is connected via small electrical Ver¬ connecting elements 43 with its underside with the conductor 42 -. by soldering - electrically connected. The
Bauteil 40, die Verbindungseiemente 43 und die Leiterbahn 42 unterhalb des Bauteils sind durch eine Isolierung 45 abge¬ deckt. Mittels kaltgespritzter Metallisierung 46 ist eine e- lektrische Verbindung der Bauteiloberseite 47 mit der Leiter- bahn 41 realisiert.Component 40, the Verbindungsseiemente 43 and the conductor 42 below the component are abge by an insulation 45 covers. By means of cold-sprayed metallization 46, an electrical connection of the component top side 47 to the conductor track 41 is realized.
Figur 8 zeigt in perspektivischer Ansicht eine Ausgestaltung der Erfindung, bei der eine Metallisierung 50 zur elektri¬ schen Abschirmung bzw. gegen EMV-Störungen ausgebildet ist. Dazu kann die Metallisierung 50 - wie im Zusammenhang mit Fi¬ gur 1 ausführlich erläutert - auf die (innere) Oberfläche 51 eines nicht leitenden, als Gehäuseschale ausgebildeten Sub¬ strats 53 kaltgespritzt sein. Hier wird bevorzugt für die Herstellung der kaltgespritzten Metallisierung 50 ein sehr gut leitendes Ausgangsmaterial, wie z.B. Kupfer oder Gold, verwendet. Dadurch können elektromagnetische Störungen an dem Austreten aus dem bzw. Eindringen in das Gehäuse 53 gehindert werden. Zusätzlich oder alternativ könnte die Metallisierung auch auf der äußeren Oberfläche 54 der Gehäuseschale 53 auf¬ gebracht sein. Die Gehäuseschale kann ein weiteres Substrat 55 abdecken, das z.B. wie vorstehend beschrieben metallisiert sein kann.FIG. 8 shows a perspective view of an embodiment of the invention in which a metallization 50 is designed for electrical shielding or against EMC interference. For this purpose, the metallization 50 - as explained in detail in connection with FIG. 1 - can be cold-sprayed onto the (inner) surface 51 of a nonconductive substrate 53 designed as a housing shell. Here is preferred for the Preparation of cold sprayed metallization 50 uses a highly conductive starting material such as copper or gold. This can prevent electromagnetic interference from leaking out of or entering the housing 53. In addition or as an alternative, the metallization could also be applied to the outer surface 54 of the housing shell 53. The housing shell may cover another substrate 55, which may be metallized as described above, for example.
Figur 9 zeigt eine Anordnung mit einer Verbindung von zwei Leitern in unterschiedlichen Ebenen. Ein Substrat 9 weist ei¬ ne erste Ebene 60 mit einer metallischen Beschichtung oder Leiterbahn 61 und eine zweite Ebene 62 mit einer Beschichtung oder Leiterbahn 63 auf. Um die Leiterbahnen 61, 63 elektrisch zu verbinden, ist eine Metallisierung 65 vorgesehen, die aus einem kaltgespritzten, gut leitenden Material wie z.B. Kupfer besteht. Diese erstreckt sich unter leitender Verbindung der Leiterbahnen 61, 63 durch eine Ausnehmung 66 in dem Substrat. Bevorzugt ist die Ausnehmung konisch, also mit zueinander weisenden Abschrägungen ausgestaltet. Dies ermöglicht eine bevorzugte senkrechte Bestrahlung des Substrats durch eine Maske 67 mit Öffnungen 68, 69 hindurch.FIG. 9 shows an arrangement with a connection of two conductors in different planes. A substrate 9 has a first plane 60 with a metallic coating or conductor track 61 and a second plane 62 with a coating or conductor track 63. To electrically connect the conductive lines 61, 63, a metallization 65 is provided, which is made of a cold-sprayed, highly conductive material, such as e.g. Copper exists. This extends under conductive connection of the conductor tracks 61, 63 through a recess 66 in the substrate. Preferably, the recess is conical, that is designed with mutually facing bevels. This allows for a preferred perpendicular irradiation of the substrate through a mask 67 having openings 68, 69 therethrough.
Die Metallisierung 65 ist durch die Öffnung 68 hindurch er¬ zeugt, wie auch Materialreste 70 in diesem Maskenbereich an¬ deuten. Nur zur Verdeutlichung ist ferner eine Metallisierung bzw. ein Partikelstrahl 6 durch die Öffnung 69 gezeigt. Selbstverständlich können auch mehrere Maskenöffnungen gleichzeitig bestrahlt werden.The metallization 65 is generated through the opening 68, as are material residues 70 in this mask region. For clarification only, a metallization or a particle beam 6 is also shown through the opening 69. Of course, several mask openings can be irradiated simultaneously.
Auf diese Art kann beispielsweise ein Substrat für die Über¬ Kopf-Montage (Flip-Chip) eines Bauteils realisiert werden. Die Leiterbahnen können dabei auch zur externen Kontaktierung des Bauteils dienen.In this way, for example, a substrate for Über¬ head mounting (flip-chip) of a component can be realized. The interconnects can also serve for external contacting of the component.
Figur 10 zeigt eine Ausgestaltung des erfindungsgemäßen Ver- fahrens zur Herstellung einer Anordnung mit teilweise freien kragträgerartigen Kontaktanschlüssen. Ein Substrat 9 wird hier mit seiner Oberseite 8 in Bezug auf eine Stützebene 71 eines nur gestrichelt angedeuteten Trägers 72 plan und fluch¬ tend ausgerichtet. Anschließend wird wie schon ausführlich erläutert z.B. durch Maskierung mindestens ein elektrischer Anschlusskontakt 74, 75, 76, 77 durch Kaltgasspritzen von Me¬ tallisierungen 78 ausgebildet. Die Metallisierungen sind je¬ weils in elektrischem Kontakt mit einer Anschlussfläche 81, 82, 83, 84. Während der Herstellung befindet sich die Sub- stratoberfläche also in einer Ebene mit einem umgebenden (ge¬ strichelt angedeuteten) Trägersubstrat, das nach Fertigstel¬ lung der Metallisierungen entfernt wird. Damit entstehen die in Figur 10 erkennbaren überstehenden kragträgerartigen An¬ schlusskontakte. Auch hier kann eine Abstützung der An- Schlusskontakte durch z.B. gehäuseseitige Elemente erfolgen.FIG. 10 shows an embodiment of the method according to the invention for producing an arrangement with partially free cantilever-type contact connections. A substrate 9 is here aligned with its upper side 8 in relation to a support plane 71 of a carrier 72 indicated only by dashed lines, flat and flush. Subsequently, as explained in detail, e.g. By masking at least one electrical connection contact 74, 75, 76, 77 by cold gas spraying of Me¬ tallierungen 78 formed. The metallizations are in each case in electrical contact with a connection surface 81, 82, 83, 84. During production, the substrate surface is therefore in one plane with a surrounding carrier substrate (indicated by dashed lines) which, after completion of the process Metallizations is removed. This results in the protruding crest-carrier-like connection contacts recognizable in FIG. Here, too, a support of the terminal contacts by e.g. housing-side elements take place.
Figur 11 zeigt schließlich die Verhältnisse bei Verwendung eines Substrats 90 aus einem weichen Basismaterial, das mit harten Körnern verfüllt ist. Der Ausgangszustand des Sub- strats ist in Figur 11 links schematisch dargestellt; man er¬ kennt weicheres Basismaterial (z.B. Kunststoff) 91 und darin eingelagerte Füllpartikel oder Körner 92 aus einem harten Ma¬ terial, z.B. Keramikkörner. Nach dem zunächst bei Beginn der Bestrahlung der Substratoberfläche 93 der aus der Düse 7 aus- tretende Partikelstrahl 6 vermehrt das weiche BasismaterialFinally, FIG. 11 shows the conditions when using a substrate 90 made of a soft base material which is filled with hard grains. The initial state of the substrate is shown schematically on the left in FIG. 11; softer base material (e.g., plastic) 91 and filler particles or grains 92 of a hard material, e.g. Ceramic grains. After the particle beam 6 which emerges from the nozzle 7 at the beginning of the irradiation of the substrate surface 93, the soft base material increases
91 abträgt und so ein harter Restfüllkörper verbleibt (mitt¬ lerer Teil der Figur 11) , erfolgt die eigentliche Metallisie¬ rung (Schichtabscheidung) erst anschließend (rechter Teil der Figur 11) , wodurch die Metallisierung 95 eine besonders feste Verbindung mit den zurückgebliebenen harten Körnern 92 ein¬ geht. 91 and so a hard residual filler remains (mitt¬ Lerer part of Figure 11), the actual Metallisie¬ tion (layer deposition) takes place only afterwards (right part of FIG. 11), whereby the metallization 95 enters into a particularly firm connection with the remaining hard grains 92.
Bezugszeichenliste:LIST OF REFERENCE NUMBERS
1 Fördergas1 conveying gas
2 Einrichtung 3 Heizelement2 device 3 heating element
4 Pulverzufuhr4 powder feed
5 Ausgangsmaterial (Beschichtungswerkstof f )5 starting material (coating material)
6 Kupferpartikel6 copper particles
7 Düse 8 Oberseite7 nozzle 8 top
9 Substrat 9a Senkloch9 Substrate 9a countersunk hole
10 Metallisierung10 metallization
11 Leiterbahn IIa Widerstandsmaterial11 trace IIa resistance material
12 Richtung12 direction
14 Leiterbahn14 trace
15 Leiterbahn15 trace
16 Verbindung 18 Leiter16 connection 18 conductors
19 Anschlusskontakt19 connection contact
20 Leiter20 conductors
21 Metallisierung21 metallization
22 Gehäuse 23 Metallisierung22 housing 23 metallization
25 elektrischer Leiter25 electrical conductors
26 Bauteil26 component
27 Isolator27 insulator
28 Öffnung 29 Leiterbahn28 opening 29 trace
30 Metallisierung30 metallization
31 Leistungshalbleiter (Bauteil)31 power semiconductors (component)
32 Isolator 33 Schaltungsplatine32 insulator 33 circuit board
34 Ausnehmung34 recess
35 Oberseite35 top
36 Leiterbahnen36 tracks
37 Metallisierung37 metallization
38 Kühlelernent38 Cooler
40 Bauteil40 component
41 Leiterbahn41 trace
42 Leiterbahn42 trace
43 Verbindungselemente43 fasteners
45 Isolierung45 insulation
46 Metallisierung46 metallization
47 Bauteiloberseite47 component top side
50 Metallisierung50 metallization
51 Oberfläche51 surface
53 Substrat53 substrate
54 Oberfläche54 surface
55 weiteres Substrat55 additional substrate
60 erste Ebene60 first level
61 Leiterbahn61 trace
62 zweite Ebene62 second level
63 Leiterbahn63 trace
65 Metallisierung65 metallization
66 Ausnehmung66 recess
67 Maske67 mask
68 Öffnung68 opening
69 Öffnung69 opening
70 Materialreste70 material residues
71 Stützebene71 support level
72 Träger72 carriers
74 Anschlusskontakt74 connection contact
75 Anschlusskontakt75 connection contact
76 Anschlusskontakt 77 Anschlusskontakt76 connection contact 77 connection contact
78 Metallisierungen78 metallizations
81 Anschlussfläche81 connection surface
82 Anschlussfläche 83 Anschlussfläche82 pad 83 pad
84 Anschlussfläche84 connection surface
90 Substrat90 substrate
91 Basismaterial 92 Füllpartikel91 Base material 92 filler particles
93 Substratoberfläche93 substrate surface
95 Metallisierung 95 metallization

Claims

Patentansprüche claims
1. Elektrische Anordnung mit einem Substrat (9) mit mindes¬ tens einem elektrischen Bauteil (40) und/oder einer Leiter- bahn (11) , auf dem mindestens eine Metallisierung (10) aufge¬ bracht ist, dadurch gekennzeichnet, dass die Metallisierung (10) eine kaltgasgespritzte Metallisierung ist.1. Electrical arrangement with a substrate (9) with at least one electrical component (40) and / or a conductor track (11) on which at least one metallization (10) is applied, characterized in that the metallization (10) is a cold gas injection metallization.
2. Anordnung nach Anspruch 1, dadurch gekennzeichnet, dass die Metallisierung eine Leiterbahn (11) bildet.2. Arrangement according to claim 1, characterized in that the metallization forms a conductor track (11).
3. Anordnung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Metallisierung (50) eine elektromagnetische Abschir¬ mung bildet.3. Arrangement according to claim 1 or 2, characterized in that the metallization (50) forms an electromagnetic Abschir¬ determination.
4. Anordnung nach Anspruch 1, 2 oder 3, dadurch gekennzeich¬ net, dass die Metallisierung ein elektrisches Widerstandsma¬ terial (IIa) ist.4. Arrangement according to claim 1, 2 or 3, characterized gekennzeich¬ net, that the metallization is an electrical Widerstandsma¬ material (IIa).
5. Anordnung nach Anspruch 4, dadurch gekennzeichnet, dass das Widerstandsmaterial (IIa) Konstantan ist.5. Arrangement according to claim 4, characterized in that the resistance material (IIa) is constantan.
6. Anordnung nach Anspruch 4, dadurch gekennzeichnet, dass das Widerstandsmaterial (IIa) Manginan ist.6. Arrangement according to claim 4, characterized in that the resistance material (IIa) is manganese.
7. Anordnung nach Anspruch 1, 2 oder 3, dadurch gekennzeich¬ net, dass die Metallisierung (10) ein Ventilmetall oder eine Ventilmetalllegierung ist.7. Arrangement according to claim 1, 2 or 3, characterized gekennzeich¬ net, that the metallization (10) is a valve metal or a valve metal alloy.
8. Anordnung nach Anspruch 7, dadurch gekennzeichnet, dass das Ventilmetall zumindest teilweise anodisch oxidiert ist. 8. Arrangement according to claim 7, characterized in that the valve metal is at least partially anodized.
9. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass das Substrat (90) ein Grundmaterial (91) umfasst, das n'it harten Füllkörnern (92) verfüllt ist.9. Arrangement according to one of the preceding claims, characterized in that the substrate (90) comprises a base material (91) which is filled n'it hard Füllkörnern (92).
10. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass zwischen dem Substrat (9) und der Metal¬ lisierung eine elektrisch isolierende Schicht vorgesehen ist.10. Arrangement according to one of the preceding claims, characterized in that an electrically insulating layer is provided between the substrate (9) and the metallization.
11. Anordnung nach Anspruch 10, dadurch gekennzeichnet, dass die isolierende Schicht durch Plasma-Elektrolytische-11. Arrangement according to claim 10, characterized in that the insulating layer by plasma electrolytic
Oxidation gebildet ist.Oxidation is formed.
12. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Metallisierung (10) mindestens ein Senkloch (9a) in dem Substrat (9) ausfüllt.12. Arrangement according to one of the preceding claims, characterized in that the metallization (10) fills at least one countersunk hole (9a) in the substrate (9).
13. 'Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Metallisierung (78) mindestens einen Anschlusskontakt (74) ausbildet.13. 'Arrangement according to one of the preceding claims, characterized in that the metallization (78) at least one terminal contact (74) is formed.
14. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass der Metallisierung Zusatzmaterial, bei¬ spielsweise Silizium, Keramik und/oder Kohlenstoff, beigefügt ist .14. Arrangement according to one of the preceding claims, characterized in that the metallization additional material, spielsweise silicon, ceramic and / or carbon, is attached.
15. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Metallisierung (21) eine elektrische Verbindung zwischen zwei Leitern (18, 20) bildet, wobei zu¬ mindest einer der Leiter (20) auf dem Substrat (9) angeordnet ist. 15. Arrangement according to one of the preceding claims, characterized in that the metallization (21) forms an electrical connection between two conductors (18, 20), zu¬ least one of the conductors (20) on the substrate (9) is arranged.
16. Anordnung nach Anspruch 15, dadurch gekennzeichnet, dass der eine Leiter (18) als elektrischer Anschlusskontakt (19) ausgebildet ist.16. The arrangement according to claim 15, characterized in that the one conductor (18) is designed as an electrical connection contact (19).
17. Anordnung nach Anspruch 16, dadurch gekennzeichnet, dass der Anschlusskontakt (19) mechanisch von einem Gehäuse (22) gestützt ist.17. Arrangement according to claim 16, characterized in that the connection contact (19) is mechanically supported by a housing (22).
18. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass auf dem Substrat (9) eine Basis- Metallisierung (30) aufgebracht ist, auf der mindestens ein elektrisches Bauteil (31) angeordnet ist, das Bauteil (31) zumindest teilweise von einer Verschaltungsplatine (33) umge¬ ben ist und die kaltgespritzte Metallisierung (37) eine e- lektrische Verbindung zwischen Bauteil (31) und Verschal- tungsplatine (33) bildet.18. Arrangement according to one of the preceding claims, characterized in that on the substrate (9) a base metallization (30) is applied, on which at least one electrical component (31) is arranged, the component (31) at least partially of a Circuit board (33) umge¬ Ben ben and the cold-sprayed metallization (37) forms an electrical connection between the component (31) and interconnection board (33).
19. Anordnung nach Anspruch 18, dadurch gekennzeichnet, dass das Bauteil (31) in einer Ausnehmung (34) der Verschaltungs- platine (33) platziert ist und das Bauteil (31) von einer I- solierung (32) umgeben ist.19. Arrangement according to claim 18, characterized in that the component (31) is placed in a recess (34) of the interconnection board (33) and the component (31) is surrounded by an insulation (32).
20. Anordnung nach Anspruch 19, dadurch gekennzeichnet, dass die Isolierung (32) eine Ausnehmung aufweist, die von der Me- tallisierung (37) durchdrungen ist.20. Arrangement according to claim 19, characterized in that the insulation (32) has a recess which is penetrated by the metallization (37).
21. Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass die Metallisierung (65) einen auf dem Substrat (9) angeordneten elektrischen Leiter (61) in einer ersten Ebene (60) mit einem elektrischen Leiter (63) verbin¬ det, der in einer zweiten Ebene (62) auf dem Substrat ange¬ ordnet ist. 21. Arrangement according to one of the preceding claims, characterized in that the metallization (65) on the substrate (9) arranged electrical conductor (61) in a first plane (60) with an electrical conductor (63) verbin¬ det, the in a second plane (62) is arranged ange¬ on the substrate.
22. Verfahren zum Herstellen einer Anordnung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, dass auf ei¬ nem Substrat (9) ein Bauteil (40) und/oder eine Leiterbahn22. A method for producing an arrangement according to one of the preceding claims, characterized in that on ei¬ NEM substrate (9) has a component (40) and / or a conductor track
(41, 42) angeordnet wird und durch Kaltgasspritzen eine Me- tallisierung (46) aufgebracht wird, die das Bauteil (40) und/oder die Leiterbahn (41) elektrisch kontaktiert.(41, 42) is arranged and by cold gas spraying a metallization (46) is applied, which electrically contacts the component (40) and / or the conductor track (41).
23. Verfahren zum Herstellen einer Anordnung nach Anspruch 22, dadurch gekennzeichnet, dass das Substrat (9) während des Kaltgasspritzens maskiert wird.23. Method for producing an arrangement according to claim 22, characterized in that the substrate (9) is masked during the cold gas spraying.
24. Verfahren zum Herstellen einer Anordnung nach Anspruch 22 oder 23, dadurch gekennzeichnet, dass das Substrat (9) mit seiner Oberseite (8) in Bezug auf eine Stützebene (71) eines Trägers (72) ausgerichtet wird, mindestens ein elektrischer Anschlusskontakt (74) durch Kaltgasspritzen einer Metallisie¬ rung (78) ausgebildet wird, wobei der Anschlusskontakt (74) sich mindestens teilweise auf der Stützebene (71) erstreckt, und der Träger (72) nach Fertigstellung des Anschlusskontakts (74) entfernt wird. 24. A method for producing an arrangement according to claim 22 or 23, characterized in that the substrate (9) is aligned with its upper side (8) with respect to a support plane (71) of a carrier (72), at least one electrical connection contact (74 ) is formed by cold gas spraying a Metallisie¬ tion (78), wherein the terminal contact (74) extends at least partially on the support plane (71), and the carrier (72) after completion of the terminal contact (74) is removed.
PCT/EP2005/009406 2004-09-29 2005-09-01 Electrical assembly and method for the production of an electrical assembly WO2006034767A1 (en)

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