WO2006036599A3 - Light emitting diodes exhibiting both high reflectivity and high light extraction - Google Patents

Light emitting diodes exhibiting both high reflectivity and high light extraction Download PDF

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Publication number
WO2006036599A3
WO2006036599A3 PCT/US2005/033210 US2005033210W WO2006036599A3 WO 2006036599 A3 WO2006036599 A3 WO 2006036599A3 US 2005033210 W US2005033210 W US 2005033210W WO 2006036599 A3 WO2006036599 A3 WO 2006036599A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
array
light emitting
internally generated
emitting diode
Prior art date
Application number
PCT/US2005/033210
Other languages
French (fr)
Other versions
WO2006036599A2 (en
Inventor
Karl Beeson
Scott Zimmerman
Original Assignee
Goldeneye Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldeneye Inc filed Critical Goldeneye Inc
Publication of WO2006036599A2 publication Critical patent/WO2006036599A2/en
Publication of WO2006036599A3 publication Critical patent/WO2006036599A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Abstract

The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident light and the internally generated light. A multi-layer semiconductor structure is deposited on the reflecting layer. The multi­layer semiconductor structure has an active layer that emits the internally generated light. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for internally generated light. The light extracting elements can be an array of trenches, an array of holes, an array of ridges or an array of etched strips. The light emitting diode improves the efficiency of light recycling illumination systems.
PCT/US2005/033210 2004-09-28 2005-09-16 Light emitting diodes exhibiting both high reflectivity and high light extraction WO2006036599A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/952,112 US7352006B2 (en) 2004-09-28 2004-09-28 Light emitting diodes exhibiting both high reflectivity and high light extraction
US10/952,112 2004-09-28

Publications (2)

Publication Number Publication Date
WO2006036599A2 WO2006036599A2 (en) 2006-04-06
WO2006036599A3 true WO2006036599A3 (en) 2006-08-10

Family

ID=36119385

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/033210 WO2006036599A2 (en) 2004-09-28 2005-09-16 Light emitting diodes exhibiting both high reflectivity and high light extraction

Country Status (2)

Country Link
US (1) US7352006B2 (en)
WO (1) WO2006036599A2 (en)

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US20060071225A1 (en) 2006-04-06
WO2006036599A2 (en) 2006-04-06
US7352006B2 (en) 2008-04-01

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