WO2006041659A3 - Low 1c screw dislocation density 3 inch silicon carbide wafer - Google Patents
Low 1c screw dislocation density 3 inch silicon carbide wafer Download PDFInfo
- Publication number
- WO2006041659A3 WO2006041659A3 PCT/US2005/034351 US2005034351W WO2006041659A3 WO 2006041659 A3 WO2006041659 A3 WO 2006041659A3 US 2005034351 W US2005034351 W US 2005034351W WO 2006041659 A3 WO2006041659 A3 WO 2006041659A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dislocation density
- low
- silicon carbide
- screw dislocation
- inch silicon
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200580033838XA CN101061262B (en) | 2004-10-04 | 2005-09-27 | Low 1c screw dislocation 3 inch silicon carbide wafer |
EP05798669.7A EP1797225B2 (en) | 2004-10-04 | 2005-09-27 | Low 1c screw dislocation density 3 inch silicon carbide wafer |
JP2007534681A JP2008515748A (en) | 2004-10-04 | 2005-09-27 | Low 1c screw dislocation 3 inch silicon carbide wafer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/957,806 US7314520B2 (en) | 2004-10-04 | 2004-10-04 | Low 1c screw dislocation 3 inch silicon carbide wafer |
US10/957,806 | 2004-10-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006041659A2 WO2006041659A2 (en) | 2006-04-20 |
WO2006041659A3 true WO2006041659A3 (en) | 2006-06-08 |
Family
ID=35925857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/034351 WO2006041659A2 (en) | 2004-10-04 | 2005-09-27 | Low 1c screw dislocation density 3 inch silicon carbide wafer |
Country Status (7)
Country | Link |
---|---|
US (3) | US7314520B2 (en) |
EP (2) | EP2584071B1 (en) |
JP (3) | JP2008515748A (en) |
KR (1) | KR20070054719A (en) |
CN (1) | CN101061262B (en) |
TW (1) | TWI313892B (en) |
WO (1) | WO2006041659A2 (en) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US10094041B2 (en) | 2011-07-04 | 2018-10-09 | Toyota Jidosha Kabushiki Kaisha | SiC single crystal and method of producing same |
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US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
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US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5958132A (en) * | 1991-04-18 | 1999-09-28 | Nippon Steel Corporation | SiC single crystal and method for growth thereof |
WO2001068954A2 (en) * | 2000-03-13 | 2001-09-20 | Ii-Vi Incorporated | Axial gradient transport apparatus and process |
EP1143033A2 (en) * | 2000-04-07 | 2001-10-10 | Hoya Corporation | Silicon carbide and method for producing the same |
US20020038627A1 (en) * | 2000-02-15 | 2002-04-04 | Vodakov Yury Alexandrovich | Apparatus for growing low defect density silicon carbide |
US20030070611A1 (en) * | 2001-10-12 | 2003-04-17 | Daisuke Nakamura | SiC single crystal, method for manufacturing SiC single crystal, SiC water having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4387503A (en) * | 1981-08-13 | 1983-06-14 | Mostek Corporation | Method for programming circuit elements in integrated circuits |
JPS58142629A (en) * | 1982-02-17 | 1983-08-24 | Toshiba Corp | Diagonal type matrix network |
US4543594A (en) * | 1982-09-07 | 1985-09-24 | Intel Corporation | Fusible link employing capacitor structure |
JPS59105354A (en) * | 1982-12-09 | 1984-06-18 | Toshiba Corp | Semiconductor device |
US4779126A (en) * | 1983-11-25 | 1988-10-18 | International Rectifier Corporation | Optically triggered lateral thyristor with auxiliary region |
US4894791A (en) * | 1986-02-10 | 1990-01-16 | Dallas Semiconductor Corporation | Delay circuit for a monolithic integrated circuit and method for adjusting delay of same |
US4799126A (en) * | 1987-04-16 | 1989-01-17 | Navistar International Transportation Corp. | Overload protection for D.C. circuits |
GB2206010A (en) * | 1987-06-08 | 1988-12-21 | Philips Electronic Associated | Differential amplifier and current sensing circuit including such an amplifier |
US4777471A (en) * | 1987-06-22 | 1988-10-11 | Precision Microdevices Inc. | Apparatus for multiple link trimming in precision integrated circuits |
US4860185A (en) * | 1987-08-21 | 1989-08-22 | Electronic Research Group, Inc. | Integrated uninterruptible power supply for personal computers |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US5021861A (en) * | 1990-05-23 | 1991-06-04 | North Carolina State University | Integrated circuit power device with automatic removal of defective devices and method of fabricating same |
JP2804860B2 (en) * | 1991-04-18 | 1998-09-30 | 新日本製鐵株式会社 | SiC single crystal and growth method thereof |
US5539217A (en) * | 1993-08-09 | 1996-07-23 | Cree Research, Inc. | Silicon carbide thyristor |
US6077619A (en) | 1994-10-31 | 2000-06-20 | Sullivan; Thomas M. | Polycrystalline silicon carbide ceramic wafer and substrate |
US5766343A (en) | 1995-01-17 | 1998-06-16 | The United States Of America As Represented By The Secretary Of The Navy | Lower bandgap, lower resistivity, silicon carbide heteroepitaxial material, and method of making same |
US5883403A (en) * | 1995-10-03 | 1999-03-16 | Hitachi, Ltd. | Power semiconductor device |
US5663580A (en) * | 1996-03-15 | 1997-09-02 | Abb Research Ltd. | Optically triggered semiconductor device |
US5944890A (en) | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
US6562130B2 (en) | 1997-01-22 | 2003-05-13 | The Fox Group, Inc. | Low defect axially grown single crystal silicon carbide |
US5873937A (en) | 1997-05-05 | 1999-02-23 | Northrop Grumman Corporation | Method of growing 4H silicon carbide crystal |
JP3003027B2 (en) | 1997-06-25 | 2000-01-24 | 日本ピラー工業株式会社 | Single crystal SiC and method for producing the same |
US5915194A (en) * | 1997-07-03 | 1999-06-22 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
US6165874A (en) * | 1997-07-03 | 2000-12-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
TW440989B (en) | 1997-09-05 | 2001-06-16 | Nippon Pillar Packing | Semiconductor wafer holder with CVD silicon carbide film coating |
JP3043675B2 (en) | 1997-09-10 | 2000-05-22 | 日本ピラー工業株式会社 | Single crystal SiC and method for producing the same |
JPH11135512A (en) * | 1997-10-31 | 1999-05-21 | Mitsubishi Electric Corp | Power semiconductor device and manufacture thereof |
US6214108B1 (en) * | 1998-05-19 | 2001-04-10 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same |
JP2917149B1 (en) | 1998-07-13 | 1999-07-12 | 日本ピラー工業株式会社 | Single crystal SiC and method for producing the same |
US6218680B1 (en) | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
EP1215730B9 (en) * | 1999-09-07 | 2007-08-01 | Sixon Inc. | SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
US6824611B1 (en) | 1999-10-08 | 2004-11-30 | Cree, Inc. | Method and apparatus for growing silicon carbide crystals |
US6754104B2 (en) * | 2000-06-22 | 2004-06-22 | Progressant Technologies, Inc. | Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET |
JP3761418B2 (en) * | 2001-05-10 | 2006-03-29 | Hoya株式会社 | Compound crystal and process for producing the same |
TW583354B (en) | 2001-05-25 | 2004-04-11 | Mitsui Shipbuilding Eng | Method for producing amorphous SiC wafer |
US20020189536A1 (en) | 2001-06-15 | 2002-12-19 | Bridgestone Corporation | Silicon carbide single crystal and production thereof |
US6488771B1 (en) * | 2001-09-25 | 2002-12-03 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for growing low-defect single crystal heteroepitaxial films |
JP3776374B2 (en) * | 2002-04-30 | 2006-05-17 | 株式会社豊田中央研究所 | Method for producing SiC single crystal and method for producing SiC wafer with epitaxial film |
US6657276B1 (en) * | 2001-12-10 | 2003-12-02 | Advanced Micro Devices, Inc. | Shallow trench isolation (STI) region with high-K liner and method of formation |
JP3895978B2 (en) * | 2001-12-12 | 2007-03-22 | 新日本製鐵株式会社 | Seed crystal for silicon carbide single crystal growth, silicon carbide single crystal ingot, and method for producing the same |
JP2003183097A (en) * | 2001-12-17 | 2003-07-03 | Nippon Steel Corp | Silicon carbide single crystal ingot and its production method |
JP3881562B2 (en) | 2002-02-22 | 2007-02-14 | 三井造船株式会社 | SiC monitor wafer manufacturing method |
ATE491055T1 (en) * | 2002-04-04 | 2010-12-15 | Nippon Steel Corp | SILICON CARBIDE SINGLE CRYSTAL SEED CRYSTAL AND METHOD FOR PRODUCING A ROD THEREFROM |
US6814801B2 (en) | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
US7147715B2 (en) * | 2003-07-28 | 2006-12-12 | Cree, Inc. | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
US7220313B2 (en) * | 2003-07-28 | 2007-05-22 | Cree, Inc. | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
JP2004031470A (en) | 2002-06-24 | 2004-01-29 | Matsushita Electric Ind Co Ltd | SEMICONDUCTOR DEVICE USING SINGLE CRYSTAL SiC, AND POWER CONVERSION APPARATUS USING THE SAME |
US7601441B2 (en) * | 2002-06-24 | 2009-10-13 | Cree, Inc. | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
US6783592B2 (en) * | 2002-10-10 | 2004-08-31 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations |
FR2852974A1 (en) * | 2003-03-31 | 2004-10-01 | Soitec Silicon On Insulator | PROCESS FOR THE PRODUCTION OF MONOCRYSTALLINE CRYSTALS |
JP3764462B2 (en) * | 2003-04-10 | 2006-04-05 | 株式会社豊田中央研究所 | Method for producing silicon carbide single crystal |
US7033912B2 (en) | 2004-01-22 | 2006-04-25 | Cree, Inc. | Silicon carbide on diamond substrates and related devices and methods |
US7192482B2 (en) | 2004-08-10 | 2007-03-20 | Cree, Inc. | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
US7300519B2 (en) * | 2004-11-17 | 2007-11-27 | Cree, Inc. | Reduction of subsurface damage in the production of bulk SiC crystals |
US8410488B2 (en) * | 2006-09-14 | 2013-04-02 | Cree, Inc. | Micropipe-free silicon carbide and related method of manufacture |
US7449065B1 (en) * | 2006-12-02 | 2008-11-11 | Ohio Aerospace Institute | Method for the growth of large low-defect single crystals |
EP2498293B1 (en) * | 2009-11-06 | 2018-08-01 | NGK Insulators, Ltd. | Epitaxial substrate for semiconductor element and method for producing epitaxial substrate for semiconductor element |
EP2851456A1 (en) * | 2012-04-20 | 2015-03-25 | II-VI Incorporated | Large Diameter, High Quality SiC Single Crystals, Method and Apparatus |
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2004
- 2004-10-04 US US10/957,806 patent/US7314520B2/en active Active
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2005
- 2005-09-27 EP EP13151964.7A patent/EP2584071B1/en active Active
- 2005-09-27 KR KR1020077007696A patent/KR20070054719A/en not_active Application Discontinuation
- 2005-09-27 CN CN200580033838XA patent/CN101061262B/en active Active
- 2005-09-27 WO PCT/US2005/034351 patent/WO2006041659A2/en active Application Filing
- 2005-09-27 EP EP05798669.7A patent/EP1797225B2/en active Active
- 2005-09-27 JP JP2007534681A patent/JP2008515748A/en active Pending
- 2005-10-03 TW TW094134555A patent/TWI313892B/en active
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2007
- 2007-11-15 US US11/940,454 patent/US8384090B2/en active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5958132A (en) * | 1991-04-18 | 1999-09-28 | Nippon Steel Corporation | SiC single crystal and method for growth thereof |
US20020038627A1 (en) * | 2000-02-15 | 2002-04-04 | Vodakov Yury Alexandrovich | Apparatus for growing low defect density silicon carbide |
WO2001068954A2 (en) * | 2000-03-13 | 2001-09-20 | Ii-Vi Incorporated | Axial gradient transport apparatus and process |
EP1143033A2 (en) * | 2000-04-07 | 2001-10-10 | Hoya Corporation | Silicon carbide and method for producing the same |
US20030070611A1 (en) * | 2001-10-12 | 2003-04-17 | Daisuke Nakamura | SiC single crystal, method for manufacturing SiC single crystal, SiC water having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device |
Non-Patent Citations (3)
Title |
---|
MULLER ST G ET AL: "Defects in SiC substrates and epitaxial layers affecting semiconductor device performance", EUROPEAN PHYSICAL JOURNAL, APPLIED PHYSICS EDP SCIENCES FRANCE, vol. 27, no. 1-3, July 2004 (2004-07-01), pages 29 - 35, XP002372583, ISSN: 1286-0042 * |
WANG S ET AL: "Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport", MATERIALS SCIENCE FORUM TRANS TECH PUBLICATIONS SWITZERLAND, vol. 389-393, 2002, pages 35 - 38, XP009063103, ISSN: 0255-5476 * |
YOGANATHAN M ET AL: "Growth of large diameter semi-insulating 6H-SiC crystals by physical vapor transport", SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOL.815) MATERIALS RESEARCH SOC WARRENDALE, PA, USA, 2004, pages 21 - 26, XP002372585 * |
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WO2006041659A2 (en) | 2006-04-20 |
US8785946B2 (en) | 2014-07-22 |
TWI313892B (en) | 2009-08-21 |
EP1797225B2 (en) | 2017-10-18 |
KR20070054719A (en) | 2007-05-29 |
US20060073707A1 (en) | 2006-04-06 |
JP5572295B2 (en) | 2014-08-13 |
CN101061262B (en) | 2013-06-12 |
EP2584071B1 (en) | 2014-10-22 |
US8384090B2 (en) | 2013-02-26 |
CN101061262A (en) | 2007-10-24 |
EP2584071A1 (en) | 2013-04-24 |
TW200629390A (en) | 2006-08-16 |
US20080169476A1 (en) | 2008-07-17 |
US7314520B2 (en) | 2008-01-01 |
JP2009035477A (en) | 2009-02-19 |
JP5410572B2 (en) | 2014-02-05 |
JP2008515748A (en) | 2008-05-15 |
JP2012214379A (en) | 2012-11-08 |
US20130161651A1 (en) | 2013-06-27 |
EP1797225A2 (en) | 2007-06-20 |
EP1797225B1 (en) | 2013-03-06 |
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