WO2006055960A3 - Device for emission of high frequency signals - Google Patents

Device for emission of high frequency signals Download PDF

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Publication number
WO2006055960A3
WO2006055960A3 PCT/US2005/042392 US2005042392W WO2006055960A3 WO 2006055960 A3 WO2006055960 A3 WO 2006055960A3 US 2005042392 W US2005042392 W US 2005042392W WO 2006055960 A3 WO2006055960 A3 WO 2006055960A3
Authority
WO
WIPO (PCT)
Prior art keywords
emission
high frequency
frequency signals
signals
thz
Prior art date
Application number
PCT/US2005/042392
Other languages
French (fr)
Other versions
WO2006055960A2 (en
Inventor
Kenneth E Salsman
Daniel W So
Original Assignee
Sct Ra Inc
Kenneth E Salsman
Daniel W So
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/157,272 external-priority patent/US7280078B2/en
Application filed by Sct Ra Inc, Kenneth E Salsman, Daniel W So filed Critical Sct Ra Inc
Priority to EP05826624A priority Critical patent/EP1825560A4/en
Priority to JP2007543417A priority patent/JP2008522492A/en
Publication of WO2006055960A2 publication Critical patent/WO2006055960A2/en
Publication of WO2006055960A3 publication Critical patent/WO2006055960A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2426—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators in combination with other electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/26—Supports; Mounting means by structural association with other equipment or articles with electric discharge tube
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H03H9/2452—Free-free beam resonators

Abstract

A device for emission of high frequency signals is provided. The emission device is capable of emission of signals in the Gigahertz (GHz) and Terahertz (THz) range. The device may utilize, for example, a cantilever comprising a material that is capable of altering its electrical properties when flexed.
PCT/US2005/042392 2004-11-20 2005-11-21 Device for emission of high frequency signals WO2006055960A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05826624A EP1825560A4 (en) 2004-11-20 2005-11-21 Device for emission of high frequency signals
JP2007543417A JP2008522492A (en) 2004-11-20 2005-11-21 High frequency signal emission device

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US52292104P 2004-11-20 2004-11-20
US52292404P 2004-11-20 2004-11-20
US52292004P 2004-11-20 2004-11-20
US52292204P 2004-11-20 2004-11-20
US52292504P 2004-11-20 2004-11-20
US52292304P 2004-11-20 2004-11-20
US60/522,922 2004-11-20
US60/522,923 2004-11-20
US60/522,925 2004-11-20
US60/522,924 2004-11-20
US60/522,920 2004-11-20
US60/522,921 2004-11-20
US11/157,272 US7280078B2 (en) 2004-11-20 2005-06-20 Sensor for detecting high frequency signals
US11/157,272 2005-06-20

Publications (2)

Publication Number Publication Date
WO2006055960A2 WO2006055960A2 (en) 2006-05-26
WO2006055960A3 true WO2006055960A3 (en) 2007-06-21

Family

ID=36407875

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/042392 WO2006055960A2 (en) 2004-11-20 2005-11-21 Device for emission of high frequency signals

Country Status (4)

Country Link
US (1) US7288873B2 (en)
EP (1) EP1825560A4 (en)
JP (1) JP2008522492A (en)
WO (1) WO2006055960A2 (en)

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WO2008147575A2 (en) * 2007-01-11 2008-12-04 Rensselaer Polytechnic Institute Systems, methods, and devices for handling terahertz radiation
JP5339755B2 (en) * 2008-03-25 2013-11-13 ラピスセミコンダクタ株式会社 MEMS vibrator, semiconductor package
WO2012001554A1 (en) * 2010-06-29 2012-01-05 International Business Machines Corporation Electromechanical switch device and method of operating the same
DE102010035248A1 (en) * 2010-08-24 2012-03-01 Siemens Aktiengesellschaft Capacitive MEMS RF demodulator for ultra-low-power use
JP2012255669A (en) * 2011-06-07 2012-12-27 Nippon Dempa Kogyo Co Ltd Acceleration measuring apparatus
US9182295B1 (en) * 2011-09-09 2015-11-10 Sitime Corporation Circuitry and techniques for resistor-based temperature sensing
US8427249B1 (en) * 2011-10-19 2013-04-23 The United States Of America As Represented By The Secretary Of The Navy Resonator with reduced acceleration sensitivity and phase noise using time domain switch
RU2484483C1 (en) * 2011-11-28 2013-06-10 Открытое акционерное общество "НПО "Геофизика-НВ" Manufacturing method of nano-electromechanical converter, and nano-electromechanical converter with autoelectronic emission
JP2013124928A (en) * 2011-12-14 2013-06-24 Nippon Dempa Kogyo Co Ltd External force detector
KR101405691B1 (en) * 2012-07-24 2014-06-10 주식회사 팬택 Terminal using piezo-electric module as antenna and method for the same
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US10854761B1 (en) * 2015-03-30 2020-12-01 Southern Methodist University Electronic switch and active artificial dielectric
CN104935336B (en) * 2015-07-01 2017-09-29 东南大学 Silicon substrate low-leakage current double cantilever beam can moving grid phase-locked loop circuit
CN104993824B (en) * 2015-07-01 2018-02-23 东南大学 Silicon substrate low-leakage current double cantilever beam can moving grid frequency divider
CN104935335B (en) * 2015-07-01 2017-09-29 东南大学 The double clamped beam switch double grid phase-locked loop circuits of GaAs base low-leakage current
CN104993825B (en) * 2015-07-01 2017-11-24 东南大学 GaAs base low-leakage current double cantilever beam switchs double grid frequency divider
CN105049038B (en) * 2015-07-01 2017-11-07 东南大学 The double clamped beam switch double grid frequency dividers of GaAs base low-leakage current
CN104935330B (en) * 2015-07-01 2017-10-20 东南大学 GaAs base low-leakage current double cantilever beam switchs double grid phase-locked loop circuit
CN104935334B (en) * 2015-07-01 2017-09-29 东南大学 The double clamped beams of silicon substrate low-leakage current can moving grid NMOS phase detectors
CN114503360B (en) * 2019-10-10 2023-11-03 罗姆股份有限公司 Terahertz device

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Also Published As

Publication number Publication date
EP1825560A4 (en) 2010-09-15
EP1825560A2 (en) 2007-08-29
WO2006055960A2 (en) 2006-05-26
US20060109181A1 (en) 2006-05-25
US7288873B2 (en) 2007-10-30
JP2008522492A (en) 2008-06-26

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