WO2006060543A3 - Use of cl2 and/or hcl during silicon epitaxial film formation - Google Patents

Use of cl2 and/or hcl during silicon epitaxial film formation Download PDF

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Publication number
WO2006060543A3
WO2006060543A3 PCT/US2005/043420 US2005043420W WO2006060543A3 WO 2006060543 A3 WO2006060543 A3 WO 2006060543A3 US 2005043420 W US2005043420 W US 2005043420W WO 2006060543 A3 WO2006060543 A3 WO 2006060543A3
Authority
WO
WIPO (PCT)
Prior art keywords
epitaxial film
film formation
silicon epitaxial
during silicon
substrate
Prior art date
Application number
PCT/US2005/043420
Other languages
French (fr)
Other versions
WO2006060543A2 (en
Inventor
Zhiyuan Ye
Yihwan Kim
Xiaowei Li
Ali Zojaji
Nicholas C Dalida
Jinsong Tang
Xiao Chen
Arkadii V Samoilov
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/001,774 external-priority patent/US7312128B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2007544499A priority Critical patent/JP4918043B2/en
Priority to KR1020077013924A priority patent/KR101181040B1/en
Priority to CN2005800435106A priority patent/CN101116173B/en
Priority to EP05852606A priority patent/EP1829089A2/en
Publication of WO2006060543A2 publication Critical patent/WO2006060543A2/en
Publication of WO2006060543A3 publication Critical patent/WO2006060543A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HC1 and C12 so as to etch the epitaxial film and other films formed during step (b). Numerous other aspects are provided.
PCT/US2005/043420 2004-12-01 2005-11-30 Use of cl2 and/or hcl during silicon epitaxial film formation WO2006060543A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007544499A JP4918043B2 (en) 2004-12-01 2005-11-30 Silicon epitaxial film forming method
KR1020077013924A KR101181040B1 (en) 2004-12-01 2005-11-30 Use of cl2 and/or hcl during silicon epitaxial film formation
CN2005800435106A CN101116173B (en) 2004-12-01 2005-11-30 Use of cl2 and/or hcl during silicon epitaxial film formation
EP05852606A EP1829089A2 (en) 2004-12-01 2005-11-30 Use of cl2 and/or hcl during silicon epitaxial film formation

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/001,774 US7312128B2 (en) 2004-12-01 2004-12-01 Selective epitaxy process with alternating gas supply
US11/001,774 2004-12-01
US11/227,974 2005-09-14
US11/227,974 US7682940B2 (en) 2004-12-01 2005-09-14 Use of Cl2 and/or HCl during silicon epitaxial film formation

Publications (2)

Publication Number Publication Date
WO2006060543A2 WO2006060543A2 (en) 2006-06-08
WO2006060543A3 true WO2006060543A3 (en) 2006-08-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/043420 WO2006060543A2 (en) 2004-12-01 2005-11-30 Use of cl2 and/or hcl during silicon epitaxial film formation

Country Status (7)

Country Link
US (4) US7682940B2 (en)
EP (1) EP1829089A2 (en)
JP (1) JP4918043B2 (en)
KR (1) KR101181040B1 (en)
CN (1) CN102176411B (en)
TW (1) TWI327749B (en)
WO (1) WO2006060543A2 (en)

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