WO2006089021A2 - Ion beam measurement apparatus and method - Google Patents

Ion beam measurement apparatus and method Download PDF

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Publication number
WO2006089021A2
WO2006089021A2 PCT/US2006/005469 US2006005469W WO2006089021A2 WO 2006089021 A2 WO2006089021 A2 WO 2006089021A2 US 2006005469 W US2006005469 W US 2006005469W WO 2006089021 A2 WO2006089021 A2 WO 2006089021A2
Authority
WO
WIPO (PCT)
Prior art keywords
selectively
biased electrode
biased
ion beam
electrode
Prior art date
Application number
PCT/US2006/005469
Other languages
French (fr)
Other versions
WO2006089021A3 (en
Inventor
Anthony Renau
Eric Hermanson
Joseph C. Olson
Gordon Angel
Original Assignee
Varian Semiconductor Equipment Associates, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates, Inc. filed Critical Varian Semiconductor Equipment Associates, Inc.
Priority to JP2007555376A priority Critical patent/JP5044418B2/en
Priority to KR1020077020639A priority patent/KR101191941B1/en
Priority to CN2006800049399A priority patent/CN101120427B/en
Publication of WO2006089021A2 publication Critical patent/WO2006089021A2/en
Publication of WO2006089021A3 publication Critical patent/WO2006089021A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24405—Faraday cages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

Definitions

  • the present invention relates generally to an apparatus and method useful in measuring properties of an ion beam and more particularly to an apparatus and method for performing functions of both a Faraday and an energy contamination monitor.
  • a Faraday Cup measures an ion beam current by drawing an electron from ground for each positive ion that enters it.
  • the Faraday's magnetic field prevents external secondary electrons from entering and prevents produced secondary electrons from exiting, thus enabling a measure of the current of the ion beam itself, free from the influence of extraneous charged particles.
  • An energy contamination monitor detects ions in a decelerated ion beam that have become neutral. Adjustment of an ion implanter in response to the detection of such ion beam neutrals permits their reduction or elimination, before being implanted on a wafer. Energy contamination monitors are described more fully in co-pending U.S. Provisional Patent Application No. 60/544,029, which is hereby incorporated herein by reference.
  • Instrumentation in the end-station of an ion implanter is required to perform a variety of measurements, including the dose being applied to a wafer, the angular distribution of the ions within an ion beam, the density distribution of the ions within the ion beam as a whole, and the level of energy contamination in decelerated ion beams.
  • an end- station typically includes both a Faraday and an energy contamination monitor, increasing both the physical hardware and expense of the end-station. Accordingly, there is a need in the art for an apparatus and method for performing a function of each of a Faraday and an energy contamination monitor, thus reducing both the hardware and expense of an ion implanter end-station.
  • the present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use.
  • the apparatus of the present invention is capable of selectively measuring two properties of an ion beam, mcluding, for example, a current and a level of energy contamination in a decelerated ion beam.
  • a first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.
  • a second aspect of the invention provides a method of selectively measuring one of a current and a level of energy contamination within an ion beam comprising the steps of providing an apparatus having an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, wherein the selectively biased electrode may selectively be negatively biased and positively biased, and a collector, and selecting a negative bias for the selectively biased electrode to measure a current within the ion beam and a positive bias for the selectively biased electrode to measure a level of energy contamination within the ion beam.
  • a third aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a measuring device including a plurality of electrodes for selectively measuring one of a current and a level of energy contamination within the ion beam, and a collector.
  • FIG. 1 shows an apparatus of the present invention in Faraday mode.
  • FIG. 2 shows an apparatus of the present invention in energy contamination monitor mode.
  • apparatus 8 is configured in Faraday mode, wherein a positively biased electrode 30 is disposed between two negatively biased electrodes 20, 22. Together, electrodes 20, 22, 30 make a measuring device for measuring a current of the ion beam.
  • Low energy electrons 60 are excluded from apparatus 8 by a first negatively biased electrode 20 and low energy ions 52 are excluded from apparatus 8 by positively biased electrode 30 while high energy ions 50 pass through aperture 10 and past each electrode 20, 30, 22 and strike collector 40.
  • Low energy electrons 62 emitted from collector 40 are suppressed by a second negatively biased electrode 22 and retained in collector 40.
  • apparatus 8 is capable of measuring a current of ion beam 70.
  • decelerated positive ions 150 are prevented from reaching collector 140 by the field provided by the positive potential applied to positively biased electrodes 130, 132 and electrons 160 released from collector 140 by neutral particles are collected by first and second positively biased electrodes 130, 132.
  • apparatus 100 is capable of measuring the level of energy contamination within decelerated ion beam 170.
  • the apparatus of the present invention may be selectively operated in the Faraday mode of FIG. 1 and the energy contamination monitor mode of FIG. 2.
  • the electrodes of the present invention comprise a measuring device for selectively measuring one of a current and a level of energy contamination in an ion beam.
  • Such an apparatus and method of operation may be used in place of two or more apparatuses currently known in the art.
  • the apparatus and method of the present invention may be used as a replacement for the angle measurement cups in the rear of a process chamber, including a V ⁇ StaHC process chamber available from Varian Semiconductor Equipment Associates.
  • the apparatus and method of the present invention may be used as the dose monitor cups and energy contamination monitors in such a chamber. Accordingly, the apparatus and method of the present invention fulfills three roles currently filled by separate apparatuses in the dose and quality control functions of high current machines.

Abstract

The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.

Description

ION BEAM MEASUREMENT APPARATUS AND METHOD
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of co-pending U.S. Provisional Patent Application No. 60/653,394, filed February 16, 2005, which is hereby incorporated by reference herein.
BACKGROUND OF THE INVENTION
(1) Technical Field
The present invention relates generally to an apparatus and method useful in measuring properties of an ion beam and more particularly to an apparatus and method for performing functions of both a Faraday and an energy contamination monitor.
(2) Related Art
A Faraday Cup, or Faraday, measures an ion beam current by drawing an electron from ground for each positive ion that enters it. The Faraday's magnetic field prevents external secondary electrons from entering and prevents produced secondary electrons from exiting, thus enabling a measure of the current of the ion beam itself, free from the influence of extraneous charged particles.
An energy contamination monitor detects ions in a decelerated ion beam that have become neutral. Adjustment of an ion implanter in response to the detection of such ion beam neutrals permits their reduction or elimination, before being implanted on a wafer. Energy contamination monitors are described more fully in co-pending U.S. Provisional Patent Application No. 60/544,029, which is hereby incorporated herein by reference.
Instrumentation in the end-station of an ion implanter is required to perform a variety of measurements, including the dose being applied to a wafer, the angular distribution of the ions within an ion beam, the density distribution of the ions within the ion beam as a whole, and the level of energy contamination in decelerated ion beams. To perform these measurements, an end- station typically includes both a Faraday and an energy contamination monitor, increasing both the physical hardware and expense of the end-station. Accordingly, there is a need in the art for an apparatus and method for performing a function of each of a Faraday and an energy contamination monitor, thus reducing both the hardware and expense of an ion implanter end-station.
SUMMARY OF THE INVENTION
The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, mcluding, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.
A second aspect of the invention provides a method of selectively measuring one of a current and a level of energy contamination within an ion beam comprising the steps of providing an apparatus having an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, wherein the selectively biased electrode may selectively be negatively biased and positively biased, and a collector, and selecting a negative bias for the selectively biased electrode to measure a current within the ion beam and a positive bias for the selectively biased electrode to measure a level of energy contamination within the ion beam.
A third aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a measuring device including a plurality of electrodes for selectively measuring one of a current and a level of energy contamination within the ion beam, and a collector.
The foregoing and other features of the invention will be apparent from the following more particular description of embodiments of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
The embodiments of this invention will be described in detail, with reference to the following figures, wherein like designations denote like elements, and wherein: FIG. 1 shows an apparatus of the present invention in Faraday mode. FIG. 2 shows an apparatus of the present invention in energy contamination monitor mode.
DETAILED DESCRIPTION
Referring to FIG. 1, apparatus 8 is configured in Faraday mode, wherein a positively biased electrode 30 is disposed between two negatively biased electrodes 20, 22. Together, electrodes 20, 22, 30 make a measuring device for measuring a current of the ion beam. Low energy electrons 60 are excluded from apparatus 8 by a first negatively biased electrode 20 and low energy ions 52 are excluded from apparatus 8 by positively biased electrode 30 while high energy ions 50 pass through aperture 10 and past each electrode 20, 30, 22 and strike collector 40. Low energy electrons 62 emitted from collector 40 are suppressed by a second negatively biased electrode 22 and retained in collector 40. In Faraday mode, apparatus 8 is capable of measuring a current of ion beam 70.
Altering the bias of second negatively biased electrode 22 results in the apparatus 100 of FIG. 2, operating in energy contamination monitor mode. In this mode, decelerated positive ions 150 are prevented from reaching collector 140 by the field provided by the positive potential applied to positively biased electrodes 130, 132 and electrons 160 released from collector 140 by neutral particles are collected by first and second positively biased electrodes 130, 132. Accordingly, in energy contamination monitor mode, apparatus 100 is capable of measuring the level of energy contamination within decelerated ion beam 170.
Thus, by selectively reversing the bias of one electrode, the apparatus of the present invention may be selectively operated in the Faraday mode of FIG. 1 and the energy contamination monitor mode of FIG. 2. As such, the electrodes of the present invention comprise a measuring device for selectively measuring one of a current and a level of energy contamination in an ion beam. Such an apparatus and method of operation may be used in place of two or more apparatuses currently known in the art. For example, the apparatus and method of the present invention may be used as a replacement for the angle measurement cups in the rear of a process chamber, including a VϋStaHC process chamber available from Varian Semiconductor Equipment Associates. In addition, the apparatus and method of the present invention may be used as the dose monitor cups and energy contamination monitors in such a chamber. Accordingly, the apparatus and method of the present invention fulfills three roles currently filled by separate apparatuses in the dose and quality control functions of high current machines.
While this invention has been described in conjunction with the specific embodiments outlined above, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art. Accordingly, the embodiments of the invention as set forth above are intended to be illustrative, not limiting. Various changes may be made without departing from the spirit and scope of the invention as defined in the following claims.

Claims

CLAIMS What is claimed is:
1. An ion beam measurement apparatus comprising: an aperture for receiving the ion beam; a negatively biased electrode disposed adjacent to the aperture; a positively biased electrode disposed adjacent to the negatively biased electrode; a selectively biased electrode disposed adjacent to the positively biased electrode; and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.
2. The apparatus of claim 1, wherein the apparatus measures a current of an ion beam in the case that the selectively biased electrode is negatively biased.
3. The apparatus of claim 2, wherein a plurality of low energy electrons are substantially excluded from the apparatus by the negatively biased electrode.
4. The apparatus of claim 2, wherein a plurality of low energy ions are substantially excluded from the apparatus by the positively biased electrode.
5. The apparatus of claim 2, wherein aplurality of high energy ions strike the collector.
6. The apparatus of claim 2, wherein a plurality of low energy electrons emitted from the collector are substantially suppressed by the selectively biased electrode and retained in the collector.
7. The apparatus of claim 1, wherein the apparatus measures a level of energy contamination within the ion beam in the case that the selectively biased electrode is positively biased.
8. The apparatus of claim 7, wherein a plurality of decelerated positive ions are substantially prevented from reaching the collector by at least one of the positively biased electrode and the selectively biased electrode.
9. The apparatus of claim 7, wherein a plurality of high energy neutral particles strike the collector.
10. The apparatus of claim 7, wherein a plurality of electrons released from the collector are collected by at least one of the positively biased electrode and the selectively biased electrode.
11. The apparatus of claim 1, wherein the apparatus measures a current of the ion beam in the case that the selectively biased electrode is negatively biased and measures a level of energy contamination in the ion beam in the case that the selectively biased electrode is positively biased.
12. A method of selectively measuring one of a current and a level of energy contamination within an ion beam comprising the steps of: providing an apparatus having: an aperture for receiving the ion beam; a negatively biased electrode disposed adjacent to the aperture; a positively biased electrode disposed adjacent to the negatively biased electrode; a selectively biased electrode disposed adjacent to the positively biased electrode, wherein the selectively biased electrode may selectively be negatively biased and positively biased; and a collector; and selecting a negative bias for the selectively biased electrode to measure a current within the ion beam and a positive bias for the selectively biased electrode to measure a level of energy contamination within the ion beam,
13. The method of claim 12, wherein, in the case that the selectively biased electrode is negatively biased, a plurality of low energy electrons are substantially excluded from the apparatus by the negatively biased electrode.
14. The method of claim 12, wherein, in fhe case that the selectively biased electrode is negatively biased, a plurality of low energy ions are substantially excluded from the apparatus by the positively biased electrode.
15. The method of claim 12, wherein, in the case that the selectively biased electrode is negatively biased, a plurality of high energy ions strike the collector.
16. The method of claim 12, wherein, in the case that the selectively biased electrode is negatively biased, a plurality of low energy electrons emitted from the collector are substantially suppressed by the selectively biased electrode and retained in the collector.
17. The method of claim 12, wherein, in the case that the selectively biased electrode is positively biased, a plurality of decelerated positive ions are substantially prevented from reaching the collector by at least one of the positively biased electrode and the selectively biased electrode.
18. The method of claim 12, wherein, in the case that the selectively biased electrode is positively biased, a plurality of high-energy neutral particles strike the collector.
19. The apparatus of claim 12, wherein, in the case that the selectively biased electrode is positively biased, a plurality of electrons released from the collector are collected by at least one of the positively biased electrode and the selectively biased electrode.
20. An ion beam measurement apparatus comprising: an aperture for receiving the ion beam; a measuring device including a plurality of electrodes for selectively measuring one of a current and a level of energy contamination within the ion beam; and a collector.
PCT/US2006/005469 2005-02-16 2006-02-16 Ion beam measurement apparatus and method WO2006089021A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007555376A JP5044418B2 (en) 2005-02-16 2006-02-16 Ion beam measuring apparatus and method
KR1020077020639A KR101191941B1 (en) 2005-02-16 2006-02-16 Ion beam measurement apparatus and method
CN2006800049399A CN101120427B (en) 2005-02-16 2006-02-16 Ion beam measurement apparatus and method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US65339405P 2005-02-16 2005-02-16
US60/653,394 2005-02-16
US11/093,930 US7170067B2 (en) 2005-02-16 2005-03-30 Ion beam measurement apparatus and method
US11/093,930 2005-03-30

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Publication Number Publication Date
WO2006089021A2 true WO2006089021A2 (en) 2006-08-24
WO2006089021A3 WO2006089021A3 (en) 2007-02-15

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US (1) US7170067B2 (en)
JP (1) JP5044418B2 (en)
KR (1) KR101191941B1 (en)
CN (1) CN101120427B (en)
TW (1) TWI406317B (en)
WO (1) WO2006089021A2 (en)

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KR101151057B1 (en) 2010-12-30 2012-06-01 한국원자력연구원 Apparatus to analyzing group characteristic of ion beam
US10416199B2 (en) 2017-01-17 2019-09-17 International Business Machines Corporation Measuring flux, current, or integrated charge of low energy particles

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US7888636B2 (en) * 2007-11-01 2011-02-15 Varian Semiconductor Equipment Associates, Inc. Measuring energy contamination using time-of-flight techniques
US20100019141A1 (en) * 2008-07-25 2010-01-28 Varian Semiconductor Equipment Associates, Inc. Energy contamination monitor with neutral current detection
US8049168B2 (en) * 2008-12-18 2011-11-01 Varian Semiconductor Equipment Associates, Inc. Time-of-flight segmented Faraday
FR2961009A1 (en) * 2010-06-03 2011-12-09 Ion Beam Services SECONDARY ELECTRON ELECTRON DETECTOR
US8766207B2 (en) * 2011-09-23 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Beam monitoring device, method, and system
CN104202894B (en) * 2014-07-29 2016-08-24 北京航空航天大学 A kind of faraday probe measured for ion thruster
CN104965217B (en) * 2015-06-26 2018-05-25 中国工程物理研究院核物理与化学研究所 A kind of measuring device and method of pulsed ionizing beam cross-sectional image

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US10416199B2 (en) 2017-01-17 2019-09-17 International Business Machines Corporation Measuring flux, current, or integrated charge of low energy particles
US10901010B2 (en) 2017-01-17 2021-01-26 International Business Machines Corporation Measuring flux, current, or integrated charge of low energy particles

Also Published As

Publication number Publication date
CN101120427A (en) 2008-02-06
US20060192134A1 (en) 2006-08-31
TWI406317B (en) 2013-08-21
CN101120427B (en) 2010-05-19
US7170067B2 (en) 2007-01-30
TW200702644A (en) 2007-01-16
KR101191941B1 (en) 2012-10-17
KR20070111516A (en) 2007-11-21
JP5044418B2 (en) 2012-10-10
JP2008530759A (en) 2008-08-07
WO2006089021A3 (en) 2007-02-15

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