WO2006093653A3 - High efficiency light emitting diode (led) with optimized photonic crystal extractor - Google Patents
High efficiency light emitting diode (led) with optimized photonic crystal extractor Download PDFInfo
- Publication number
- WO2006093653A3 WO2006093653A3 PCT/US2006/004719 US2006004719W WO2006093653A3 WO 2006093653 A3 WO2006093653 A3 WO 2006093653A3 US 2006004719 W US2006004719 W US 2006004719W WO 2006093653 A3 WO2006093653 A3 WO 2006093653A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- led
- photonic crystal
- light emitting
- emitting diode
- high efficiency
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Abstract
A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor (64). The LED is comprised of a substrate (28), a buffer layer (30) grown on the substrate (if needed), an active layer (32) including emitting species, one or more optical confinement layers that tailor the structure of the guided modes (40) in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers (42) may function as a mirror, an electrical contact, and/or an efficient diffraction grating.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06734737A EP1854144A2 (en) | 2005-02-28 | 2006-02-10 | High efficiency light emitting diode (led) with optimized photonic crystal extractor |
JP2007558032A JP2008532314A (en) | 2005-02-28 | 2006-02-10 | High performance light emitting diode (LED) with optimized photonic crystal extractor |
CN2006800137489A CN101194365B (en) | 2005-02-28 | 2006-02-10 | High efficiency light emitting diode (LED) with optimized photonic crystal extractor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/067,956 US7582910B2 (en) | 2005-02-28 | 2005-02-28 | High efficiency light emitting diode (LED) with optimized photonic crystal extractor |
US11/067,956 | 2005-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006093653A2 WO2006093653A2 (en) | 2006-09-08 |
WO2006093653A3 true WO2006093653A3 (en) | 2007-08-09 |
Family
ID=36931274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/004719 WO2006093653A2 (en) | 2005-02-28 | 2006-02-10 | High efficiency light emitting diode (led) with optimized photonic crystal extractor |
Country Status (6)
Country | Link |
---|---|
US (3) | US7582910B2 (en) |
EP (1) | EP1854144A2 (en) |
JP (1) | JP2008532314A (en) |
KR (1) | KR20070107798A (en) |
CN (1) | CN101194365B (en) |
WO (1) | WO2006093653A2 (en) |
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US20110062472A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Wavelength-converted semiconductor light emitting device |
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US7078735B2 (en) * | 2003-03-27 | 2006-07-18 | Sanyo Electric Co., Ltd. | Light-emitting device and illuminator |
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-
2005
- 2005-02-28 US US11/067,956 patent/US7582910B2/en not_active Expired - Fee Related
-
2006
- 2006-02-10 CN CN2006800137489A patent/CN101194365B/en not_active Expired - Fee Related
- 2006-02-10 WO PCT/US2006/004719 patent/WO2006093653A2/en active Application Filing
- 2006-02-10 KR KR1020077022108A patent/KR20070107798A/en not_active Application Discontinuation
- 2006-02-10 JP JP2007558032A patent/JP2008532314A/en active Pending
- 2006-02-10 EP EP06734737A patent/EP1854144A2/en not_active Withdrawn
-
2009
- 2009-08-13 US US12/541,061 patent/US7776629B2/en not_active Expired - Fee Related
-
2010
- 2010-07-12 US US12/834,453 patent/US20100301369A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7078735B2 (en) * | 2003-03-27 | 2006-07-18 | Sanyo Electric Co., Ltd. | Light-emitting device and illuminator |
Also Published As
Publication number | Publication date |
---|---|
WO2006093653A2 (en) | 2006-09-08 |
US20060192217A1 (en) | 2006-08-31 |
US20100301369A1 (en) | 2010-12-02 |
KR20070107798A (en) | 2007-11-07 |
EP1854144A2 (en) | 2007-11-14 |
CN101194365B (en) | 2011-07-06 |
CN101194365A (en) | 2008-06-04 |
US7582910B2 (en) | 2009-09-01 |
JP2008532314A (en) | 2008-08-14 |
US20090305446A1 (en) | 2009-12-10 |
US7776629B2 (en) | 2010-08-17 |
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