WO2006093653A3 - High efficiency light emitting diode (led) with optimized photonic crystal extractor - Google Patents

High efficiency light emitting diode (led) with optimized photonic crystal extractor Download PDF

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Publication number
WO2006093653A3
WO2006093653A3 PCT/US2006/004719 US2006004719W WO2006093653A3 WO 2006093653 A3 WO2006093653 A3 WO 2006093653A3 US 2006004719 W US2006004719 W US 2006004719W WO 2006093653 A3 WO2006093653 A3 WO 2006093653A3
Authority
WO
WIPO (PCT)
Prior art keywords
led
photonic crystal
light emitting
emitting diode
high efficiency
Prior art date
Application number
PCT/US2006/004719
Other languages
French (fr)
Other versions
WO2006093653A2 (en
Inventor
Aurelien J F David
Claude C A Weisbuch
Steven P Denbaars
Original Assignee
Univ California
Aurelien J F David
Claude C A Weisbuch
Steven P Denbaars
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Aurelien J F David, Claude C A Weisbuch, Steven P Denbaars filed Critical Univ California
Priority to JP2007558032A priority Critical patent/JP2008532314A/en
Priority to EP06734737A priority patent/EP1854144A2/en
Priority to CN2006800137489A priority patent/CN101194365B/en
Publication of WO2006093653A2 publication Critical patent/WO2006093653A2/en
Publication of WO2006093653A3 publication Critical patent/WO2006093653A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Abstract

A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor (64). The LED is comprised of a substrate (28), a buffer layer (30) grown on the substrate (if needed), an active layer (32) including emitting species, one or more optical confinement layers that tailor the structure of the guided modes (40) in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers (42) may function as a mirror, an electrical contact, and/or an efficient diffraction grating.
PCT/US2006/004719 2005-02-28 2006-02-10 High efficiency light emitting diode (led) with optimized photonic crystal extractor WO2006093653A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007558032A JP2008532314A (en) 2005-02-28 2006-02-10 High performance light emitting diode (LED) with optimized photonic crystal extractor
EP06734737A EP1854144A2 (en) 2005-02-28 2006-02-10 High efficiency light emitting diode (led) with optimized photonic crystal extractor
CN2006800137489A CN101194365B (en) 2005-02-28 2006-02-10 High efficiency light emitting diode (LED) with optimized photonic crystal extractor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/067,956 US7582910B2 (en) 2005-02-28 2005-02-28 High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US11/067,956 2005-02-28

Publications (2)

Publication Number Publication Date
WO2006093653A2 WO2006093653A2 (en) 2006-09-08
WO2006093653A3 true WO2006093653A3 (en) 2007-08-09

Family

ID=36931274

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/004719 WO2006093653A2 (en) 2005-02-28 2006-02-10 High efficiency light emitting diode (led) with optimized photonic crystal extractor

Country Status (6)

Country Link
US (3) US7582910B2 (en)
EP (1) EP1854144A2 (en)
JP (1) JP2008532314A (en)
KR (1) KR20070107798A (en)
CN (1) CN101194365B (en)
WO (1) WO2006093653A2 (en)

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Also Published As

Publication number Publication date
CN101194365A (en) 2008-06-04
US20090305446A1 (en) 2009-12-10
US7582910B2 (en) 2009-09-01
US20100301369A1 (en) 2010-12-02
US7776629B2 (en) 2010-08-17
US20060192217A1 (en) 2006-08-31
CN101194365B (en) 2011-07-06
WO2006093653A2 (en) 2006-09-08
EP1854144A2 (en) 2007-11-14
KR20070107798A (en) 2007-11-07
JP2008532314A (en) 2008-08-14

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