WO2006094487A3 - Verfahren zum herstellen eines bauelements - Google Patents

Verfahren zum herstellen eines bauelements Download PDF

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Publication number
WO2006094487A3
WO2006094487A3 PCT/DE2006/000399 DE2006000399W WO2006094487A3 WO 2006094487 A3 WO2006094487 A3 WO 2006094487A3 DE 2006000399 W DE2006000399 W DE 2006000399W WO 2006094487 A3 WO2006094487 A3 WO 2006094487A3
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WO
WIPO (PCT)
Prior art keywords
component
semiconductor layer
trench
producing
cavity
Prior art date
Application number
PCT/DE2006/000399
Other languages
English (en)
French (fr)
Other versions
WO2006094487A2 (de
Inventor
Andre Strittmatter
Lars Reissmann
Dieter Bimberg
Original Assignee
Univ Berlin Tech
Andre Strittmatter
Lars Reissmann
Dieter Bimberg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Berlin Tech, Andre Strittmatter, Lars Reissmann, Dieter Bimberg filed Critical Univ Berlin Tech
Priority to EP06722565A priority Critical patent/EP1856720A2/de
Publication of WO2006094487A2 publication Critical patent/WO2006094487A2/de
Publication of WO2006094487A3 publication Critical patent/WO2006094487A3/de
Priority to US11/851,909 priority patent/US20080048196A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties

Abstract

Die Erfindung bezieht sich auf ein Verfahren zum Herstellen eines elektrischen und/oder optischen Bauelements. Um zu erreichen, dass eine besonders gute Qualität des Bauelements erreicht wird und insbesondere Kristallversetzungen in den Materialschichten des Bauelements zuverlässig vermieden werden, ist erfindungsgemäß ein Verfahren zum Herstellen eines Bauelements (70, 300, 405) vorgesehen, bei dem in ein Substrat (10) zumindest ein Graben (30) geätzt wird, der Graben mit mindestens einer Halbleiterschicht (50) lateral derart überwachsen wird, dass der Graben durch die Halbleiterschicht unter Bildung eines gasgefüllten, insbesondere luftgefüllten Hohlraums (60) vollständig abgedeckt wird und das Bauelement in der Halbleiterschicht oder in einer auf der Halbleiterschicht aufgebrachten weiteren Halbleiterschicht integriert wird, wobei der aktive Bereich des Bauelements oberhalb des Hohlraumes angeordnet wird.
PCT/DE2006/000399 2005-03-07 2006-03-01 Verfahren zum herstellen eines bauelements WO2006094487A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP06722565A EP1856720A2 (de) 2005-03-07 2006-03-01 Verfahren zum herstellen eines bauelements
US11/851,909 US20080048196A1 (en) 2005-03-07 2007-09-07 Component and Process for Manufacturing the Same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005010821.0 2005-03-07
DE102005010821A DE102005010821B4 (de) 2005-03-07 2005-03-07 Verfahren zum Herstellen eines Bauelements

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/851,909 Continuation US20080048196A1 (en) 2005-03-07 2007-09-07 Component and Process for Manufacturing the Same

Publications (2)

Publication Number Publication Date
WO2006094487A2 WO2006094487A2 (de) 2006-09-14
WO2006094487A3 true WO2006094487A3 (de) 2006-12-28

Family

ID=36914654

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2006/000399 WO2006094487A2 (de) 2005-03-07 2006-03-01 Verfahren zum herstellen eines bauelements

Country Status (4)

Country Link
US (1) US20080048196A1 (de)
EP (1) EP1856720A2 (de)
DE (1) DE102005010821B4 (de)
WO (1) WO2006094487A2 (de)

Families Citing this family (12)

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US7557002B2 (en) 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
US7989322B2 (en) 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
KR101640830B1 (ko) * 2009-08-17 2016-07-22 삼성전자주식회사 기판 구조체 및 그 제조 방법
FR2976120A1 (fr) 2011-06-01 2012-12-07 St Microelectronics Sa Procede de fabrication d'un circuit integre comprenant au moins un guide d'ondes coplanaire
GB201112327D0 (en) 2011-07-18 2011-08-31 Epigan Nv Method for growing III-V epitaxial layers
CN103117294B (zh) 2013-02-07 2015-11-25 苏州晶湛半导体有限公司 氮化物高压器件及其制造方法
US9048091B2 (en) * 2013-03-25 2015-06-02 Infineon Technologies Austria Ag Method and substrate for thick III-N epitaxy
US9018754B2 (en) 2013-09-30 2015-04-28 International Business Machines Corporation Heat dissipative electrical isolation/insulation structure for semiconductor devices and method of making
JP2016100471A (ja) * 2014-11-21 2016-05-30 住友電気工業株式会社 半導体装置及び半導体装置の製造方法
US9793389B1 (en) * 2016-06-15 2017-10-17 Taiwan Semiconductor Manufacturing Company Limited Apparatus and method of fabrication for GaN/Si transistors isolation
DE102017108435A1 (de) * 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode
US11749790B2 (en) * 2017-12-20 2023-09-05 Lumileds Llc Segmented LED with embedded transistors

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EP1104031A2 (de) * 1999-11-15 2001-05-30 Matsushita Electric Industrial Co., Ltd. Nitrid-Halbleiter, Nitrid-Halbleiterbauelement, lichtemittierendes Halbleiterbauelement und deren Herstellungsverfahren
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US20040007786A1 (en) * 2000-09-04 2004-01-15 Chang-Tae Kim Semiconductor led device and producing method
US20040021147A1 (en) * 2002-05-15 2004-02-05 Akihiko Ishibashi Semiconductor light emitting device and fabrication method thereof
US20040251519A1 (en) * 2003-01-14 2004-12-16 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate

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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
EP1104031A2 (de) * 1999-11-15 2001-05-30 Matsushita Electric Industrial Co., Ltd. Nitrid-Halbleiter, Nitrid-Halbleiterbauelement, lichtemittierendes Halbleiterbauelement und deren Herstellungsverfahren
US20030111008A1 (en) * 2000-08-22 2003-06-19 Andre Strittmatter Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates
US20040007786A1 (en) * 2000-09-04 2004-01-15 Chang-Tae Kim Semiconductor led device and producing method
US20040021147A1 (en) * 2002-05-15 2004-02-05 Akihiko Ishibashi Semiconductor light emitting device and fabrication method thereof
US20040251519A1 (en) * 2003-01-14 2004-12-16 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate

Also Published As

Publication number Publication date
WO2006094487A2 (de) 2006-09-14
DE102005010821A1 (de) 2006-09-14
DE102005010821B4 (de) 2007-01-25
EP1856720A2 (de) 2007-11-21
US20080048196A1 (en) 2008-02-28

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