WO2006101598A3 - Group iii nitride field effect transistors - Google Patents

Group iii nitride field effect transistors Download PDF

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Publication number
WO2006101598A3
WO2006101598A3 PCT/US2006/003259 US2006003259W WO2006101598A3 WO 2006101598 A3 WO2006101598 A3 WO 2006101598A3 US 2006003259 W US2006003259 W US 2006003259W WO 2006101598 A3 WO2006101598 A3 WO 2006101598A3
Authority
WO
WIPO (PCT)
Prior art keywords
field effect
group iii
iii nitride
effect transistors
nitride field
Prior art date
Application number
PCT/US2006/003259
Other languages
French (fr)
Other versions
WO2006101598A2 (en
Inventor
Richard Peter Smith
Scott T Sheppard
Adam William Saxler
Yifeng Wu
Original Assignee
Cree Inc
Richard Peter Smith
Scott T Sheppard
Adam William Saxler
Yifeng Wu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc, Richard Peter Smith, Scott T Sheppard, Adam William Saxler, Yifeng Wu filed Critical Cree Inc
Priority to JP2008501880A priority Critical patent/JP5756249B2/en
Priority to EP20060734062 priority patent/EP1859484A2/en
Publication of WO2006101598A2 publication Critical patent/WO2006101598A2/en
Publication of WO2006101598A3 publication Critical patent/WO2006101598A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Abstract

Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about -8 to about -14 volts and a temperature of about 140 °C for at least about 10 hours.
PCT/US2006/003259 2005-03-15 2006-01-30 Group iii nitride field effect transistors WO2006101598A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008501880A JP5756249B2 (en) 2005-03-15 2006-01-30 III-nitride field effect transistor (FET) that can withstand high temperature reverse bias test conditions
EP20060734062 EP1859484A2 (en) 2005-03-15 2006-01-30 Group iii nitride field effect transistors (fets) capable of withstanding high temperature reverse bias test conditions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/080,905 US7465967B2 (en) 2005-03-15 2005-03-15 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US11/080,905 2005-03-15

Publications (2)

Publication Number Publication Date
WO2006101598A2 WO2006101598A2 (en) 2006-09-28
WO2006101598A3 true WO2006101598A3 (en) 2006-12-21

Family

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Family Applications (1)

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PCT/US2006/003259 WO2006101598A2 (en) 2005-03-15 2006-01-30 Group iii nitride field effect transistors

Country Status (4)

Country Link
US (3) US7465967B2 (en)
EP (1) EP1859484A2 (en)
JP (1) JP5756249B2 (en)
WO (1) WO2006101598A2 (en)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612390B2 (en) 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US7465967B2 (en) * 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US20070018199A1 (en) 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP5105160B2 (en) 2006-11-13 2012-12-19 クリー インコーポレイテッド Transistor
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US7608865B1 (en) * 2008-04-28 2009-10-27 Northrop Grumman Space & Mission Systems Corp. Club extension to a T-gate high electron mobility transistor
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
JP2010272689A (en) * 2009-05-21 2010-12-02 Renesas Electronics Corp Field effect transistor
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8304812B2 (en) * 2010-02-24 2012-11-06 Panasonic Corporation Terahertz wave radiating element
JP5286613B2 (en) * 2010-08-30 2013-09-11 次世代パワーデバイス技術研究組合 Nitride compound semiconductor device
JP2012109492A (en) * 2010-11-19 2012-06-07 Sanken Electric Co Ltd Compound semiconductor device
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
JP2013206976A (en) 2012-03-27 2013-10-07 Fujitsu Ltd Compound semiconductor device and manufacturing method of the same
JP5895651B2 (en) * 2012-03-28 2016-03-30 富士通株式会社 Compound semiconductor device and manufacturing method thereof
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
WO2013155396A1 (en) * 2012-04-12 2013-10-17 The Regents Of The University Of California Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
CN105164811B (en) 2013-02-15 2018-08-31 创世舫电子有限公司 Electrode of semiconductor devices and forming method thereof
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US11322599B2 (en) 2016-01-15 2022-05-03 Transphorm Technology, Inc. Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
US9806828B2 (en) 2016-02-24 2017-10-31 Frontier Engineering, Llc Radio frequency generator automated test system
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
US10002956B1 (en) * 2017-08-31 2018-06-19 Vanguard International Semiconductor Corporation High electron mobility transistor
US10325982B1 (en) * 2018-05-17 2019-06-18 Northrop Grumman Systems Corporation Drain ledge for self-aligned gate and independent channel region and drain-side ridges for SLCFET
US11206806B2 (en) 2018-12-05 2021-12-28 Creative Petworks Llc Modular pet litter box system
CN109817710A (en) * 2018-12-29 2019-05-28 英诺赛科（珠海）科技有限公司 High electron mobility transistor and its manufacturing method
US20230078017A1 (en) * 2021-09-16 2023-03-16 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040124435A1 (en) * 2002-12-27 2004-07-01 General Electric Company Homoepitaxial gallium-nitride-based electronic devices and method for producing same

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380108A (en) * 1977-08-05 1983-04-19 Incosym, Inc. Universal joint flexure hinge suspension system, and method for manufacturing this system
FR2465317A2 (en) 1979-03-28 1981-03-20 Thomson Csf FIELD EFFECT TRANSISTOR WITH HIGH BREAKAGE FREQUENCY
CA1145482A (en) 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
JPH088350B2 (en) 1985-04-08 1996-01-29 日本電気株式会社 Semiconductor device
US4755867A (en) 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
US4788156A (en) 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5411914A (en) 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
EP0334006A1 (en) 1988-02-22 1989-09-27 Siemens Aktiengesellschaft Stacked channel heterojunction fet
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5053348A (en) 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5172197A (en) 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (en) 1991-12-18 2002-12-03 浩 天野 Gallium nitride based semiconductor device and method of manufacturing the same
EP0549373B1 (en) 1991-12-25 1995-05-17 Nec Corporation Tunnel transistor and method of manufacturing same
JPH05275463A (en) 1992-03-30 1993-10-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPH05326561A (en) 1992-05-22 1993-12-10 Nec Corp Manufacture of field effect transistor
JPH0653253A (en) 1992-08-03 1994-02-25 Fujitsu Ltd Field effect transistor
JPH06267991A (en) 1993-03-12 1994-09-22 Hitachi Ltd Semiconductor device and its manufacture
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5686737A (en) 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
JP3157690B2 (en) 1995-01-19 2001-04-16 沖電気工業株式会社 Method for manufacturing pn junction element
US5534462A (en) 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
SE9501311D0 (en) 1995-04-10 1995-04-10 Abb Research Ltd Method of producing a semiconductor device having a semiconductor layer of SiC
US6002148A (en) 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
KR100195269B1 (en) 1995-12-22 1999-06-15 윤종용 Manufacture method of liquid crystal display device
US5915164A (en) 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
DE19600116C2 (en) 1996-01-03 2001-03-15 Siemens Ag Double heterostructure HEMT
JPH09330937A (en) 1996-06-07 1997-12-22 Fujitsu Ltd Semiconductor device and its manufacture
JPH1050982A (en) 1996-07-31 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US6936839B2 (en) 1996-10-16 2005-08-30 The University Of Connecticut Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
JPH10125901A (en) 1996-10-17 1998-05-15 Mitsubishi Electric Corp Field-effect transistor and manufacture thereof
US6677619B1 (en) 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6448648B1 (en) 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
JPH10335637A (en) 1997-05-30 1998-12-18 Sony Corp Hetero-junction field effect transistor
JP3119248B2 (en) 1997-09-29 2000-12-18 日本電気株式会社 Field effect transistor and method of manufacturing the same
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JPH11176830A (en) 1997-10-09 1999-07-02 Japan Energy Corp Semiconductor device
JP3372470B2 (en) * 1998-01-20 2003-02-04 シャープ株式会社 Nitride III-V compound semiconductor device
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6608327B1 (en) 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6150680A (en) 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
JPH11261053A (en) 1998-03-09 1999-09-24 Furukawa Electric Co Ltd:The High electron mobility transistor
US6086673A (en) 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
DE19836389C1 (en) * 1998-08-12 2000-04-13 Deilmamm Haniel Maschinen Und Drilling device with double impact system
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
JP3209270B2 (en) 1999-01-29 2001-09-17 日本電気株式会社 Heterojunction field effect transistor
JP2000277724A (en) 1999-03-26 2000-10-06 Nagoya Kogyo Univ Field-effect transistor and semiconductor device equipped with the same and manufacture of the same
US6582906B1 (en) 1999-04-05 2003-06-24 Affymetrix, Inc. Proportional amplification of nucleic acids
US6518637B1 (en) 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
JP2001102565A (en) 1999-09-28 2001-04-13 Toshiba Corp Method of manufacturing semiconductor device
US6812053B1 (en) 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6521514B1 (en) 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6639255B2 (en) 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
JP4592938B2 (en) 1999-12-08 2010-12-08 パナソニック株式会社 Semiconductor device
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
JP3393602B2 (en) 2000-01-13 2003-04-07 松下電器産業株式会社 Semiconductor device
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
JP4667556B2 (en) 2000-02-18 2011-04-13 古河電気工業株式会社 Vertical GaN-based field effect transistor, bipolar transistor and vertical GaN-based field effect transistor manufacturing method
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US6475889B1 (en) 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
JP4022708B2 (en) 2000-06-29 2007-12-19 日本電気株式会社 Semiconductor device
US6515316B1 (en) 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP3428962B2 (en) 2000-12-19 2003-07-22 古河電気工業株式会社 GaN based high mobility transistor
US6593193B2 (en) 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6706114B2 (en) 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
EP1410444B1 (en) 2001-07-24 2012-08-22 Cree, Inc. Insulating Gate AlGaN/GaN HEMT
JP2003142501A (en) 2001-10-31 2003-05-16 Furukawa Electric Co Ltd:The GaN-BASED FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD
US7030428B2 (en) 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP3733420B2 (en) 2002-03-01 2006-01-11 独立行政法人産業技術総合研究所 Heterojunction field effect transistor using nitride semiconductor material
JP3986887B2 (en) 2002-05-17 2007-10-03 松下電器産業株式会社 Semiconductor device
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US6841001B2 (en) 2002-07-19 2005-01-11 Cree, Inc. Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures
US20040021152A1 (en) 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US6884704B2 (en) 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
JP4620333B2 (en) * 2003-05-09 2011-01-26 三菱電機株式会社 Manufacturing method of semiconductor device
JP4746825B2 (en) 2003-05-15 2011-08-10 富士通株式会社 Compound semiconductor device
US7465967B2 (en) * 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040124435A1 (en) * 2002-12-27 2004-07-01 General Electric Company Homoepitaxial gallium-nitride-based electronic devices and method for producing same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HANSEN P ET AL: "AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B, MICROELECTRONICS AND NANOMETER STRUCTURES PROCESSING, MEASUREMENT AND PHENOMENA, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 22, no. 5, 13 October 2004 (2004-10-13), pages 2479 - 2485, XP012074652, ISSN: 1071-1023 *
KUNII T ET AL: "A high reliability GaN HEMT with SiN passivation by cat-CVD", COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM, 2004. IEEE MONTEREY, CA, USA OCT. 24-27, 2004, PISCATAWAY, NJ, USA,IEEE, 24 October 2004 (2004-10-24), pages 197 - 200, XP010767465, ISBN: 0-7803-8616-7 *

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WO2006101598A2 (en) 2006-09-28
US7465967B2 (en) 2008-12-16

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