WO2006105102A3 - Synthesis of nanostructured materials using liquid crystalline templates - Google Patents

Synthesis of nanostructured materials using liquid crystalline templates Download PDF

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Publication number
WO2006105102A3
WO2006105102A3 PCT/US2006/011306 US2006011306W WO2006105102A3 WO 2006105102 A3 WO2006105102 A3 WO 2006105102A3 US 2006011306 W US2006011306 W US 2006011306W WO 2006105102 A3 WO2006105102 A3 WO 2006105102A3
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WIPO (PCT)
Prior art keywords
liquid crystalline
synthesis
nanostructured materials
reactant
templates
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PCT/US2006/011306
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French (fr)
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WO2006105102A2 (en
Inventor
Paschalis Alexandridis
Georgios N Karanikolos
Triantafillos J Mountziaris
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Univ New York State Res Found
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Publication of WO2006105102A2 publication Critical patent/WO2006105102A2/en
Publication of WO2006105102A3 publication Critical patent/WO2006105102A3/en

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    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C01B13/00Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14Methods for preparing oxides or hydroxides in general
    • C01B13/32Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process
    • C01B13/328Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process by processes making use of emulsions, e.g. the kerosine process
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    • C01G1/00Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/02Oxides
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    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/12Sulfides
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    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00Compounds of cadmium
    • CCHEMISTRY; METALLURGY
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    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G11/00Compounds of cadmium
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    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00Compounds of lead
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    • C01G9/00Compounds of zinc
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    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881Chalcogenides
    • C09K11/883Chalcogenides with zinc or cadmium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122Single quantum well structures
    • H01L29/127Quantum box structures
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    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/04Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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    • C01P2004/30Particle morphology extending in three dimensions
    • C01P2004/32Spheres
    • C01P2004/34Spheres hollow
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    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
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    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/773Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/811Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx

Abstract

A process for synthesizing nanostructures is disclosed. The process involves forming a liquid crystalline template by combining a block copolymer, a first reactant in a polar phase, and a nonpolar phase, then contacting the template with a gas phase composed of a second reactant, under conditions effective to form nanostructures.
PCT/US2006/011306 2005-03-28 2006-03-28 Synthesis of nanostructured materials using liquid crystalline templates WO2006105102A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66577805P 2005-03-28 2005-03-28
US60/665,778 2005-03-28

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WO2006105102A2 WO2006105102A2 (en) 2006-10-05
WO2006105102A3 true WO2006105102A3 (en) 2007-09-20

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WO2005016824A2 (en) * 2003-05-05 2005-02-24 The Research Foundation Of State University Of Newyork Synthesis of nanoparticles by an emulsion-gas contacting process
US7972437B2 (en) * 2004-03-22 2011-07-05 The Regents Of The University Of California Hollow nanocrystals and method of making
US20060240590A1 (en) * 2004-11-09 2006-10-26 The Research Foundation Of State University Of New York Controlled synthesis of nanowires, nanodiscs, and nanostructured materials using liquid crystalline templates
US20100021985A1 (en) * 2007-03-20 2010-01-28 The Regents Of The University Of California Mechanical process for creating particles in fluid
CA2681374A1 (en) * 2007-03-20 2008-09-25 The Regents Of The University Of California Mechanical process for creating particles in a fluid
CN101070183B (en) * 2007-05-24 2010-06-02 上海大学 Electronic-beam radiation synthesizing method for nano lead-selenide
US8309489B2 (en) * 2009-06-18 2012-11-13 University Of Central Florida Research Foundation, Inc. Thermally stable nanoparticles on supports
EP2601042B1 (en) 2010-08-06 2022-03-23 Immunolight, Llc. Color enhancement utilizing up converters and down converters
CN102060278B (en) * 2010-12-21 2012-07-04 中国天辰工程有限公司 Preparation method of inorganic semiconductor cadmium selenide nanotube structure
JP5999390B2 (en) * 2012-05-11 2016-09-28 エルジー・ケム・リミテッド Method for producing hollow metal nanoparticles
CN103159189A (en) * 2013-04-03 2013-06-19 南京理工大学 Synthesis method of ZnSe hollow microspheres by alcohol thermal reduction
CZ2013836A3 (en) 2013-10-31 2015-09-09 Holoptica, Llc Security diffractive element of quick response provided with a conglomerate of DNA and nanoparticles of highly variable properties
CN106045517A (en) * 2016-06-02 2016-10-26 夏晨曦 Zinc selenide transparent nano-ceramic and preparation method thereof
CN108083239B (en) * 2017-12-25 2020-04-28 清远先导材料有限公司 Method for synthesizing high-purity cadmium selenide
CN110240125B (en) * 2018-03-08 2021-03-16 中国科学院苏州纳米技术与纳米仿生研究所 Hollow zinc selenide nanocrystal and preparation method and application thereof
CN114506824B (en) * 2021-12-02 2023-09-05 佛山市铁人环保科技有限公司 Zinc selenide sol and preparation method and application thereof
CN115627290A (en) * 2022-10-20 2023-01-20 苏州科技大学 Method for improving PCR detection sensitivity

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US7608237B2 (en) 2009-10-27
US20060275196A1 (en) 2006-12-07

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