WO2006120604A1 - Write once optical storage medium and method of writing data - Google Patents

Write once optical storage medium and method of writing data Download PDF

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Publication number
WO2006120604A1
WO2006120604A1 PCT/IB2006/051354 IB2006051354W WO2006120604A1 WO 2006120604 A1 WO2006120604 A1 WO 2006120604A1 IB 2006051354 W IB2006051354 W IB 2006051354W WO 2006120604 A1 WO2006120604 A1 WO 2006120604A1
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WO
WIPO (PCT)
Prior art keywords
recording
storage medium
optical storage
layer
recording layer
Prior art date
Application number
PCT/IB2006/051354
Other languages
French (fr)
Inventor
Johannes C. N. Rijpers
Original Assignee
Koninklijke Philips Electronics N.V.
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Publication date
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Publication of WO2006120604A1 publication Critical patent/WO2006120604A1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]

Definitions

  • the present invention relates to a write once optical storage medium. Particularly, the present invention relates to the layer design of a recording stack, and further to a method of writing data into such a recording stack.
  • New strategies are also required for write once recording, particularly since practical material combinations for the recording stacks are desired. Further, the number of materials for the production of record carriers has to be increased in order to be able to manufacture record carriers more environment-friendly. Another goal is to obtain a recording medium that is well suited for multi- layer recording. Additionally the manufacturing of the record carrier should be as easy as possible.
  • a write once optical storage medium having a recording stack comprising at least one recording layer sandwiched between two adjacent layers, wherein the recording layer is suitable to be molten by laser pulses and to irreversibly chemically react with material of at least one adjacent layer, and wherein the chemical reactions lead to local changes of the reflection properties of the recording stack.
  • the optical contrast on the recording medium is achieved by melting an active and absorptive layer. The melting of the layer and the reaction with the surrounding adjacent layers leads to a reflection change. Normally, the materials are chosen such that the reactive mark has a lower reflection than the unreacted material.
  • the as deposited state of the reflective layer can be amorphous or crystalline depending on the material and the deposition conditions.
  • the change of state in case of a crystalline as deposited state can be crystalline to molten and then molten to reacted; in case of an amorphous as deposited state the change will be amorphous to molten and then molten to reacted.
  • the materials adjacent to the recording material are selected such that the reaction of the molten material and the adjacent material leads to a change of the reflection properties. Further criteria are related to the melting point and the relative binding energies of the substances involved.
  • the reactive layer should have a high binding energy to elements of the surrounding dielectric, and the surrounding dielectric should have a lower binding energy to these elements.
  • the reactive layer should have a relative low melting point so as to reduce the required laser power, hence the sensitivity of the writing process.
  • the irreversible chemical reactions lead to a higher overall transparency of the recording stack. The increase of the transparency of the recording stack is important as regards multi- layer recording.
  • the recording layer comprises at least one element from the group Se, Sn, Ge, Te, Al, Mg, Si.
  • the recording layer essentially consists of one of the elements Se,
  • These elements and alloys have melting temperatures that are possible to achieve with applicable laser powers. Further, the elements have a high reactivity with materials that are well suited as components of the adjacent layers.
  • Ag, Sb and/or In can be added to the above mentioned recording layers.
  • At least one of the adjacent layers comprises an oxide from at least one element from the group Zn, In, Ga, Mg, Te, Cr, Se, Al, Sn, Ge, Si, Ce or a sulfide from at least one element from the group Zn, In, Mg, Te, Cr, Se, Al, Sn, Ge, Ce or a nitride from at least one element from the group Cr, Se, Al, Si, Ce or combinations thereof.
  • the binding energies of these nitrides, sulfides and oxides are such that materials for the recording layer can be found that have higher binding energies to oxygen, sulphur or nitrogen than the metals mentioned as components of the adjacent layers. Therefore, a change of oxygen, sulphur or nitrogen from the oxide, sulfide or nitride of the adjacent layer to the metal of the recording layer is possible.
  • At least one of the adjacent layers comprises a polycarbonate. Therefore, for example for a single layer disc, a very simple recording stack is possible that consists of a recording layer sandwiched by two polycarbonate layers.
  • no heat sink layer is provided.
  • a heat sink layer is essential to write amorphous marks, but at the same time the heat sink introduces extra absorption of the recording stack. To by-pass this problem, transparent heat sinks were introduced.
  • heat sink layers are dispensable. Thus, a less complicated recording stack with high average transparency is provided.
  • a method of writing data into a write once optical storage medium having a recording stack comprising at least one recording layer sandwiched between two adjacent layers, said method comprising the following step: melting regions of the recording layer by applying laser pulses to cause irreversible chemical reactions between molten recording layer material and material of at least one adjacent layer, wherein the irreversible chemical reactions lead to local changes of the reflection properties of the recording stack. Particularly, the irreversible chemical reactions lead to a higher overall transparency of the recording stack.
  • Figure 1 shows a write once optical storage medium having a single recording layer according to the present invention.
  • Figure 2 shows a write once optical storage medium having two recording layers according to the present invention.
  • Figure 3 shows a diagram with suitable metals and alloys and their respective melting temperatures that can be employed in recording layers of an optical storage medium according to the present invention.
  • Figure 4 shows oxides, sulfides and nitrides and their respective binding energies that can be employed in layers adjacent to the recording layers of an optical storage medium according to the present invention.
  • FIG 1 shows a write once optical storage medium 10 having a single recording layer according to the present invention.
  • the illustrated optical storage medium 10 comprises a first outer polycarbonate layer 32 and a second outer polycarbonate layer 34. Sandwiched between these polycarbonate layers 32, 34 is a stack made from a recording layer 14 that is sandwiched between two layers 20, 22 made from dielectric materials.
  • the materials of the recording stack 14 and the adjacent layers 20, 22 are chosen such that heating and melting the recording layer 14 leads to a reaction with the adjacent layers 20, 22. Possible combinations of materials are set forth below with reference to Figures 3 and 4.
  • the set up shown in Figure 1 is very simple, particularly due to the absence of a heat sink that is generally required for phase change recording.
  • the set up can be even less complicated than shown in Figure 1, for example in the absence of one or both of the adjacent layers 20, 22. This is possible, when the molten state of the recording layer is able to react with the adjacent polycarbonate or, in case of the absence of one of the adjacent layers 20, 22, if a reaction between the recording layer 14 and one of the adjacent layers 20, 22 leads to sufficient contrast and transparency.
  • FIG. 2 shows a write once optical storage medium 12 having two recording layers according to the present invention.
  • This optical storage medium 12 for double layer recording consists of the following sequence of layers: an outer polycarbonate layer 44, a dielectric layer 30, a recording layer 18, a dielectric layer 28, a polycarbonate layer 36, a dielectric layer 26, a recording layer 14, a dielectric layer 24, and an outer polycarbonate layer 32.
  • One or more of the dielectric layers 30, 28, 26, 24 and/or the inner polycarbonate layer 36 are dispensable in dependence on the appropriate choice of materials, as already explained with reference to Figure 1.
  • Figure 3 shows a diagram with suitable metals and alloys and their respective melting temperatures that can be employed in recording layers of an optical storage medium according to the present invention.
  • Figure 4 shows oxides, sulfides and nitrides and their respective binding energies that can be employed in layers adjacent to the recording layers of an optical storage medium according to the present invention. All of the materials shown are employable for realizing the present invention.
  • Preferred materials for the reactive layer are Sn, GeTe alloys, AlGe alloys, and AlMg alloys.
  • preferred materials are ZnO, ZnS, In 2 O 3 , MgO, AlN, CrN, CrO 2 , SiO 2 . Also combinations of the reactive layer materials and the dielectric layer materials are employable.
  • a preferred stack design is a dielectric layer of 80 at% ZnS / 20 at% SiO 2 (so called ZS82) having a thickness of 140 nm. On top of this layer a layer of 72 at% Al / 28 at% Ge having a thickness of 7 nm is provided. On top of this AlGe layer, a further layer of ZS 82 having a thickness of 135 nm is provided. This stack of recording layer and two adjacent layers is sandwiched between two outer polycarbonate layers.

Abstract

The present invention relates to a write once optical storage medium (10, 12) having a recording stack comprising at least one recording layer (14, 16, 18) sandwiched between to adjacent layers (20, 22, 24, 26, 28, 30), wherein the recording layer is suitable to be molten by laser pulses and to irreversibly chemically react with material of at least one adjacent layer, and wherein the chemical reactions lead to local changes of the reflection properties of the recording stack. The present invention further relates to a method of writing data into a write once optical storage medium.

Description

Write once optical storage medium and method of writing data
FIELD OF THE INVENTION
The present invention relates to a write once optical storage medium. Particularly, the present invention relates to the layer design of a recording stack, and further to a method of writing data into such a recording stack.
BACKGROUND OF THE INVENTION
Up to now dye layers have been used for write once recording technologies. For repetitive read/write data carriers it is known to use materials that undergo a reversible phase change, namely between the crystalline and amorphous phases; in this repetitive read/write case, the information from the record carrier can be retrieved due to the different reflection properties of the amorphous and crystalline regions on the disc.
New strategies are also required for write once recording, particularly since practical material combinations for the recording stacks are desired. Further, the number of materials for the production of record carriers has to be increased in order to be able to manufacture record carriers more environment-friendly. Another goal is to obtain a recording medium that is well suited for multi- layer recording. Additionally the manufacturing of the record carrier should be as easy as possible.
It is an object of the invention to provide a write once optical storage medium and a method of writing data on a write once optical storage medium that fulfill the above mentioned requirements as to the manufacturing process, the choice of materials and the environment-friendliness.
SUMMARY OF THE INVENTION
The above objects are solved by the features of the independent claims. Further developments and preferred embodiments of the invention are outlined in the dependent claims.
In accordance with the invention, there is provided a write once optical storage medium having a recording stack comprising at least one recording layer sandwiched between two adjacent layers, wherein the recording layer is suitable to be molten by laser pulses and to irreversibly chemically react with material of at least one adjacent layer, and wherein the chemical reactions lead to local changes of the reflection properties of the recording stack. On this basis a new write once optical recording technique is obtained. The optical contrast on the recording medium is achieved by melting an active and absorptive layer. The melting of the layer and the reaction with the surrounding adjacent layers leads to a reflection change. Normally, the materials are chosen such that the reactive mark has a lower reflection than the unreacted material. The as deposited state of the reflective layer can be amorphous or crystalline depending on the material and the deposition conditions. Thus, during writing, the change of state in case of a crystalline as deposited state can be crystalline to molten and then molten to reacted; in case of an amorphous as deposited state the change will be amorphous to molten and then molten to reacted. The materials adjacent to the recording material are selected such that the reaction of the molten material and the adjacent material leads to a change of the reflection properties. Further criteria are related to the melting point and the relative binding energies of the substances involved. The reactive layer should have a high binding energy to elements of the surrounding dielectric, and the surrounding dielectric should have a lower binding energy to these elements. This makes it possible that a change of the elements from the adjacent layers to the recording layer occurs. Further, the reactive layer should have a relative low melting point so as to reduce the required laser power, hence the sensitivity of the writing process. According to a preferred embodiment, the irreversible chemical reactions lead to a higher overall transparency of the recording stack. The increase of the transparency of the recording stack is important as regards multi- layer recording.
Preferably, the recording layer comprises at least one element from the group Se, Sn, Ge, Te, Al, Mg, Si. Particularly, the recording layer essentially consists of one of the elements Se,
Sn, Al, Mg or of one of the alloys Ge85Tel5, A169Ge31, A163Mg37, A139SU 1 or combinations thereof.
These elements and alloys have melting temperatures that are possible to achieve with applicable laser powers. Further, the elements have a high reactivity with materials that are well suited as components of the adjacent layers.
For stability reasons Ag, Sb and/or In can be added to the above mentioned recording layers.
In this sense, at least one of the adjacent layers comprises an oxide from at least one element from the group Zn, In, Ga, Mg, Te, Cr, Se, Al, Sn, Ge, Si, Ce or a sulfide from at least one element from the group Zn, In, Mg, Te, Cr, Se, Al, Sn, Ge, Ce or a nitride from at least one element from the group Cr, Se, Al, Si, Ce or combinations thereof. The binding energies of these nitrides, sulfides and oxides are such that materials for the recording layer can be found that have higher binding energies to oxygen, sulphur or nitrogen than the metals mentioned as components of the adjacent layers. Therefore, a change of oxygen, sulphur or nitrogen from the oxide, sulfide or nitride of the adjacent layer to the metal of the recording layer is possible.
According to a further embodiment of the present invention, at least one of the adjacent layers comprises a polycarbonate. Therefore, for example for a single layer disc, a very simple recording stack is possible that consists of a recording layer sandwiched by two polycarbonate layers.
According to a preferred embodiment of the present invention no heat sink layer is provided. In phase change recording a heat sink layer is essential to write amorphous marks, but at the same time the heat sink introduces extra absorption of the recording stack. To by-pass this problem, transparent heat sinks were introduced. On the basis of the present invention, heat sink layers are dispensable. Thus, a less complicated recording stack with high average transparency is provided.
According to a iurther aspect of the present invention, a method of writing data into a write once optical storage medium is provided having a recording stack comprising at least one recording layer sandwiched between two adjacent layers, said method comprising the following step: melting regions of the recording layer by applying laser pulses to cause irreversible chemical reactions between molten recording layer material and material of at least one adjacent layer, wherein the irreversible chemical reactions lead to local changes of the reflection properties of the recording stack. Particularly, the irreversible chemical reactions lead to a higher overall transparency of the recording stack. These and other aspects of the invention will be apparent from and elucidated with reference to the embodiments described hereinafter.
BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows a write once optical storage medium having a single recording layer according to the present invention.
Figure 2 shows a write once optical storage medium having two recording layers according to the present invention. Figure 3 shows a diagram with suitable metals and alloys and their respective melting temperatures that can be employed in recording layers of an optical storage medium according to the present invention.
Figure 4 shows oxides, sulfides and nitrides and their respective binding energies that can be employed in layers adjacent to the recording layers of an optical storage medium according to the present invention.
DESCRIPTION OF PREFERRED EMBODIMENTS
Figure 1 shows a write once optical storage medium 10 having a single recording layer according to the present invention. The illustrated optical storage medium 10 comprises a first outer polycarbonate layer 32 and a second outer polycarbonate layer 34. Sandwiched between these polycarbonate layers 32, 34 is a stack made from a recording layer 14 that is sandwiched between two layers 20, 22 made from dielectric materials. The materials of the recording stack 14 and the adjacent layers 20, 22 are chosen such that heating and melting the recording layer 14 leads to a reaction with the adjacent layers 20, 22. Possible combinations of materials are set forth below with reference to Figures 3 and 4.
The set up shown in Figure 1 is very simple, particularly due to the absence of a heat sink that is generally required for phase change recording. The set up can be even less complicated than shown in Figure 1, for example in the absence of one or both of the adjacent layers 20, 22. This is possible, when the molten state of the recording layer is able to react with the adjacent polycarbonate or, in case of the absence of one of the adjacent layers 20, 22, if a reaction between the recording layer 14 and one of the adjacent layers 20, 22 leads to sufficient contrast and transparency.
Figure 2 shows a write once optical storage medium 12 having two recording layers according to the present invention. This optical storage medium 12 for double layer recording consists of the following sequence of layers: an outer polycarbonate layer 44, a dielectric layer 30, a recording layer 18, a dielectric layer 28, a polycarbonate layer 36, a dielectric layer 26, a recording layer 14, a dielectric layer 24, and an outer polycarbonate layer 32. One or more of the dielectric layers 30, 28, 26, 24 and/or the inner polycarbonate layer 36 are dispensable in dependence on the appropriate choice of materials, as already explained with reference to Figure 1.
Figure 3 shows a diagram with suitable metals and alloys and their respective melting temperatures that can be employed in recording layers of an optical storage medium according to the present invention. Figure 4 shows oxides, sulfides and nitrides and their respective binding energies that can be employed in layers adjacent to the recording layers of an optical storage medium according to the present invention. All of the materials shown are employable for realizing the present invention. Preferred materials for the reactive layer are Sn, GeTe alloys, AlGe alloys, and AlMg alloys. For the dielectric layer, preferred materials are ZnO, ZnS, In2O3, MgO, AlN, CrN, CrO2, SiO2. Also combinations of the reactive layer materials and the dielectric layer materials are employable. On the basis of these materials, a preferred stack design is a dielectric layer of 80 at% ZnS / 20 at% SiO2 (so called ZS82) having a thickness of 140 nm. On top of this layer a layer of 72 at% Al / 28 at% Ge having a thickness of 7 nm is provided. On top of this AlGe layer, a further layer of ZS 82 having a thickness of 135 nm is provided. This stack of recording layer and two adjacent layers is sandwiched between two outer polycarbonate layers.
By this or similar recording stacks a reflection of the as deposited stack of 15,8 %, a reflection of the written mark of 3.1 % and a contrast of 80.6 % can be obtained. The average transparency of the stack is 67 %. On the basis of the present invention, a reactive recording is possible that has advantages as to the transparency of the stack, the choice of materials, particularly as to their environment-friendliness, and due to the fact that a recording stack having a simple set up is applicable. Further, a high speed recording is possible, since the reactions occur with high speed in contrast to the solid state reactions which are velocity limited by diffusion processes. Equivalents and modifications not described above may also be employed without departing from the scope of the invention, which is defined in the accompanying claims.

Claims

CLAIMS:
1. A write once optical storage medium (10, 12) having a recording stack comprising at least one recording layer (14, 16, 18) sandwiched between two adjacent layers (20, 22, 24, 26, 28, 30), wherein the recording layer is suitable to be molten by laser pulses and to irreversibly chemically react with material of at least one adjacent layer, and wherein the chemical reactions lead to local changes of the reflection properties of the recording stack.
2. The optical storage medium according to claim 1, wherein the irreversible chemical reactions lead to a higher overall transparency of the recording stack.
3. The optical storage medium according to claim 1, wherein the recording layer (14, 16, 18) comprises at least one element from the group Se, Sn, Ge, Te, Al, Mg, Si.
4. The optical storage medium according to claim 1, wherein the recording layer (14, 16, 18) essentially consists of one of the elements Se, Sn, Al, Mg or of one of the alloys
Ge85Tel5, A169Ge31, A163Mg37, A139Sil l or combinations thereof.
5. The optical storage medium according to claim 1, wherein the recording layer (14, 16, 18) is doped with at least one element from the group In, Ag or Sb.
6. The optical storage medium according to claim 1, wherein at least one of the adjacent layers (20, 22, 24, 26, 28, 30) comprises an oxide from at least one element from the group Zn, In, Ga, Mg, Te, Cr, Se, Al, Sn, Ge, Si, Ce or a sulfide from at least one element from the group Zn, In, Mg, Te, Cr, Se, Al, Sn, Ge, Ce or a nitride from at least one element from the group Cr, Se, Al, Si, Ce or combinations thereof.
7. The optical storage medium according to claim 1, wherein at least one of the adjacent layers (20, 22, 24, 26, 28, 30) comprises a polycarbonate.
8. The optical storage medium according to claim 1, wherein no heat sink layer is provided.
9. A method of writing data into a write once optical storage medium having a recording stack comprising at least one recording layer (14, 16, 18) sandwiched between two adjacent layers (20, 22, 24, 26, 28, 30), said method comprising the following step: melting regions of the recording layer by applying laser pulses to cause irreversible chemical reactions between molten recording layer material and material of at least one adjacent layer, wherein the irreversible chemical reactions lead to local changes of the reflection properties of the recording stack.
10. The method according to claim 9, wherein the irreversible chemical reactions lead to a higher overall transparency of the recording stack.
PCT/IB2006/051354 2005-05-13 2006-05-01 Write once optical storage medium and method of writing data WO2006120604A1 (en)

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