WO2006127093A3 - Methods of fabricating silicon carbide devices having a smooth surface of the channel regions - Google Patents
Methods of fabricating silicon carbide devices having a smooth surface of the channel regions Download PDFInfo
- Publication number
- WO2006127093A3 WO2006127093A3 PCT/US2006/009493 US2006009493W WO2006127093A3 WO 2006127093 A3 WO2006127093 A3 WO 2006127093A3 US 2006009493 W US2006009493 W US 2006009493W WO 2006127093 A3 WO2006127093 A3 WO 2006127093A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon carbide
- region
- methods
- smooth surface
- channel regions
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 11
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 11
- 239000000758 substrate Substances 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0886—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Abstract
Methods of forming silicon carbide power devices are provided. An n' silicon carbide layer is provided on a silicon carbide substrate. A p-type silico carbide well region is provided on the n silicon carbide layer. A buried region of p+ silicon carbide is provided in the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n' region is provided o the channel region and a portion of the & region is removed so that a portion of the n' region remains on the channel region to provide a reduction in a surface roughness of the channel region.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008513462A JP5199072B2 (en) | 2005-05-24 | 2006-03-16 | Method for fabricating a silicon carbide device having a smooth surface in a channel region |
EP06738542.7A EP1883951B1 (en) | 2005-05-24 | 2006-03-16 | Methods of fabricating silicon carbide devices having smooth channels |
EP10196317.1A EP2325869B1 (en) | 2005-05-24 | 2006-03-16 | Methods of fabricating silicon carbide devices having channel regions with a smooth surface |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/136,057 US7528040B2 (en) | 2005-05-24 | 2005-05-24 | Methods of fabricating silicon carbide devices having smooth channels |
US11/136,057 | 2005-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006127093A2 WO2006127093A2 (en) | 2006-11-30 |
WO2006127093A3 true WO2006127093A3 (en) | 2007-05-10 |
Family
ID=36753949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/009493 WO2006127093A2 (en) | 2005-05-24 | 2006-03-16 | Methods of fabricating silicon carbide devices having a smooth surface of the channel regions |
Country Status (5)
Country | Link |
---|---|
US (4) | US7528040B2 (en) |
EP (2) | EP1883951B1 (en) |
JP (2) | JP5199072B2 (en) |
TW (2) | TWI545640B (en) |
WO (1) | WO2006127093A2 (en) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569900B2 (en) * | 2004-11-16 | 2009-08-04 | Kabushiki Kaisha Toshiba | Silicon carbide high breakdown voltage semiconductor device |
JP5011493B2 (en) * | 2005-09-14 | 2012-08-29 | 関西電力株式会社 | Method for manufacturing silicon carbide semiconductor element |
US7883949B2 (en) * | 2006-06-29 | 2011-02-08 | Cree, Inc | Methods of forming silicon carbide switching devices including P-type channels |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
US8272781B2 (en) * | 2006-08-01 | 2012-09-25 | Intel Corporation | Dynamic power control of a memory device thermal sensor |
US7728402B2 (en) * | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
EP2631951B1 (en) * | 2006-08-17 | 2017-10-11 | Cree, Inc. | High power insulated gate bipolar transistors |
JP5071763B2 (en) * | 2006-10-16 | 2012-11-14 | 独立行政法人産業技術総合研究所 | Silicon carbide semiconductor device and manufacturing method thereof |
US7781312B2 (en) * | 2006-12-13 | 2010-08-24 | General Electric Company | Silicon carbide devices and method of making |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
JP4700045B2 (en) * | 2007-11-13 | 2011-06-15 | Okiセミコンダクタ株式会社 | Manufacturing method of semiconductor device |
US7795691B2 (en) * | 2008-01-25 | 2010-09-14 | Cree, Inc. | Semiconductor transistor with P type re-grown channel layer |
TWI364798B (en) * | 2008-03-21 | 2012-05-21 | Vanguard Int Semiconduct Corp | Semiconductor device and fabrication method thereof |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8629509B2 (en) * | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8541787B2 (en) * | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
WO2011010608A1 (en) * | 2009-07-24 | 2011-01-27 | 三菱電機株式会社 | Method for manufacturing silicon carbide semiconductor device |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
JP2014531752A (en) | 2011-09-11 | 2014-11-27 | クリー インコーポレイテッドCree Inc. | High current density power module with transistors having improved layout |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
DE102013010187A1 (en) | 2012-06-27 | 2014-01-02 | Fairchild Semiconductor Corp. | Schottky barrier device with locally planarized surface and associated semiconductor product |
JP5961563B2 (en) * | 2013-01-25 | 2016-08-02 | 株式会社豊田中央研究所 | Manufacturing method of semiconductor device |
JP2015041644A (en) * | 2013-08-20 | 2015-03-02 | 富士電機株式会社 | Method of manufacturing mos type semiconductor device |
JP6347188B2 (en) * | 2014-09-08 | 2018-06-27 | 富士電機株式会社 | Silicon carbide semiconductor device manufacturing method and silicon carbide semiconductor device |
US9685550B2 (en) * | 2014-12-26 | 2017-06-20 | Fairchild Semiconductor Corporation | Silicon carbide (SiC) device with improved gate dielectric shielding |
DE112016004194B4 (en) | 2015-12-02 | 2023-02-16 | Mitsubishi Electric Corporation | Silicon carbide epitaxial substrate and silicon carbide semiconductor device |
JP6237845B1 (en) * | 2016-08-24 | 2017-11-29 | 富士電機株式会社 | Vertical MOSFET and manufacturing method of vertical MOSFET |
EP3358626B1 (en) * | 2017-02-02 | 2022-07-20 | Nxp B.V. | Method of making a semiconductor switch device |
CN107331621A (en) * | 2017-07-14 | 2017-11-07 | 欧阳慧琳 | A kind of vertical bilateral diffusion field-effect tranisistor and preparation method thereof |
CN110718452A (en) | 2018-07-12 | 2020-01-21 | 创能动力科技有限公司 | Silicon carbide device and method for manufacturing same |
CN113381599B (en) * | 2021-06-29 | 2022-11-29 | 哈尔滨工业大学 | Parallel SiC MOSFET safety working domain calculation method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6429041B1 (en) * | 2000-07-13 | 2002-08-06 | Cree, Inc. | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
US6573534B1 (en) * | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
EP1494268A2 (en) * | 2003-07-02 | 2005-01-05 | Matsushita Electric Industrial Co., Ltd. | SiC Semiconductor device and method for fabricating the same |
Family Cites Families (105)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3629011A (en) | 1967-09-11 | 1971-12-21 | Matsushita Electric Ind Co Ltd | Method for diffusing an impurity substance into silicon carbide |
US4466172A (en) | 1979-01-08 | 1984-08-21 | American Microsystems, Inc. | Method for fabricating MOS device with self-aligned contacts |
JPS58175872A (en) * | 1982-04-08 | 1983-10-15 | Toshiba Corp | Insulated gate field effect transistor |
US4779126A (en) | 1983-11-25 | 1988-10-18 | International Rectifier Corporation | Optically triggered lateral thyristor with auxiliary region |
JPS63132481A (en) * | 1986-11-22 | 1988-06-04 | Toshiba Corp | Manufacture of field effect transistor |
US4811065A (en) | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
JPH01117363A (en) | 1987-10-30 | 1989-05-10 | Nec Corp | Vertical insulated gate field effect transistor |
US5111253A (en) | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
JPH0766971B2 (en) | 1989-06-07 | 1995-07-19 | シャープ株式会社 | Silicon carbide semiconductor device |
JPH0334466A (en) | 1989-06-30 | 1991-02-14 | Nippon Telegr & Teleph Corp <Ntt> | Vertical-type double diffused mosfet |
JPH03157974A (en) | 1989-11-15 | 1991-07-05 | Nec Corp | Vertical type field effect transistor |
JP2542448B2 (en) | 1990-05-24 | 1996-10-09 | シャープ株式会社 | Field effect transistor and method of manufacturing the same |
US5270554A (en) | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
US5242841A (en) | 1992-03-25 | 1993-09-07 | Texas Instruments Incorporated | Method of making LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
US5459107A (en) | 1992-06-05 | 1995-10-17 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
US5612260A (en) | 1992-06-05 | 1997-03-18 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
US6344663B1 (en) | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
US5726463A (en) | 1992-08-07 | 1998-03-10 | General Electric Company | Silicon carbide MOSFET having self-aligned gate structure |
JP3146694B2 (en) | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | Silicon carbide MOSFET and method of manufacturing silicon carbide MOSFET |
US5506421A (en) | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
JPH0799312A (en) | 1993-02-22 | 1995-04-11 | Texas Instr Inc <Ti> | Semiconductor device and its manufacturing process |
US5539217A (en) | 1993-08-09 | 1996-07-23 | Cree Research, Inc. | Silicon carbide thyristor |
US6162665A (en) | 1993-10-15 | 2000-12-19 | Ixys Corporation | High voltage transistors and thyristors |
US5510630A (en) | 1993-10-18 | 1996-04-23 | Westinghouse Electric Corporation | Non-volatile random access memory cell constructed of silicon carbide |
JP3210510B2 (en) | 1993-12-17 | 2001-09-17 | 株式会社東芝 | Method for manufacturing semiconductor device |
US5396085A (en) | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
US5385855A (en) | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
JPH08213607A (en) | 1995-02-08 | 1996-08-20 | Ngk Insulators Ltd | Semiconductor device and its manufacturing method |
US5510281A (en) | 1995-03-20 | 1996-04-23 | General Electric Company | Method of fabricating a self-aligned DMOS transistor device using SiC and spacers |
JP3521246B2 (en) | 1995-03-27 | 2004-04-19 | 沖電気工業株式会社 | Field effect transistor and method of manufacturing the same |
SE9501310D0 (en) | 1995-04-10 | 1995-04-10 | Abb Research Ltd | A method for introducing an impurity dopant into SiC, a semiconductor device formed by the method and using a highly doped amorphous layer as a source for dopant diffusion into SiC |
US5734180A (en) | 1995-06-02 | 1998-03-31 | Texas Instruments Incorporated | High-performance high-voltage device structures |
US5967795A (en) | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
JP3385938B2 (en) * | 1997-03-05 | 2003-03-10 | 株式会社デンソー | Silicon carbide semiconductor device and method of manufacturing the same |
FR2738394B1 (en) | 1995-09-06 | 1998-06-26 | Nippon Denso Co | SILICON CARBIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
JPH11261061A (en) | 1998-03-11 | 1999-09-24 | Denso Corp | Silicon carbide semiconductor device and its manufacture |
US5972801A (en) | 1995-11-08 | 1999-10-26 | Cree Research, Inc. | Process for reducing defects in oxide layers on silicon carbide |
US6133587A (en) | 1996-01-23 | 2000-10-17 | Denso Corporation | Silicon carbide semiconductor device and process for manufacturing same |
JPH09205202A (en) | 1996-01-26 | 1997-08-05 | Matsushita Electric Works Ltd | Semiconductor device |
US5663580A (en) | 1996-03-15 | 1997-09-02 | Abb Research Ltd. | Optically triggered semiconductor device |
SE9601174D0 (en) | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having a semiconductor layer of SiC and such a device |
TW350621U (en) | 1996-04-15 | 1999-01-11 | Rohm Co Ltd | Image sensor chip, method for manufacturing the same, and image sensor |
US5763905A (en) | 1996-07-09 | 1998-06-09 | Abb Research Ltd. | Semiconductor device having a passivation layer |
SE9602745D0 (en) | 1996-07-11 | 1996-07-11 | Abb Research Ltd | A method for producing a channel region layer in a SiC layer for a voltage controlled semiconductor device |
US6002159A (en) | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
US5917203A (en) | 1996-07-29 | 1999-06-29 | Motorola, Inc. | Lateral gate vertical drift region transistor |
US5837572A (en) | 1997-01-10 | 1998-11-17 | Advanced Micro Devices, Inc. | CMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted therein |
US6180958B1 (en) | 1997-02-07 | 2001-01-30 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
JP3206727B2 (en) | 1997-02-20 | 2001-09-10 | 富士電機株式会社 | Silicon carbide vertical MOSFET and method of manufacturing the same |
DE19809554B4 (en) | 1997-03-05 | 2008-04-03 | Denso Corp., Kariya | silicon carbide semiconductor device |
US5877041A (en) | 1997-06-30 | 1999-03-02 | Harris Corporation | Self-aligned power field effect transistor in silicon carbide |
DE19832329A1 (en) | 1997-07-31 | 1999-02-04 | Siemens Ag | Silicon carbide semiconductor structure manufacturing method |
US5976801A (en) * | 1997-08-08 | 1999-11-02 | Incyte Pharamceuticals, Inc. | Human reticulocalbin isoforms |
JP3180895B2 (en) | 1997-08-18 | 2001-06-25 | 富士電機株式会社 | Method for manufacturing silicon carbide semiconductor device |
WO1999009598A1 (en) | 1997-08-20 | 1999-02-25 | Siemens Aktiengesellschaft | Semiconductor structure comprising an alpha silicon carbide zone, and use of said semiconductor structure |
US6239463B1 (en) | 1997-08-28 | 2001-05-29 | Siliconix Incorporated | Low resistance power MOSFET or other device containing silicon-germanium layer |
SE9704150D0 (en) | 1997-11-13 | 1997-11-13 | Abb Research Ltd | Semiconductor device of SiC with insulating layer a refractory metal nitride layer |
JPH11191559A (en) | 1997-12-26 | 1999-07-13 | Matsushita Electric Works Ltd | Manufacture of mosfet |
JPH11251592A (en) | 1998-01-05 | 1999-09-07 | Denso Corp | Carbon silicon semiconductor device |
JP3216804B2 (en) | 1998-01-06 | 2001-10-09 | 富士電機株式会社 | Manufacturing method of silicon carbide vertical FET and silicon carbide vertical FET |
JPH11266017A (en) | 1998-01-14 | 1999-09-28 | Denso Corp | Silicon carbide semiconductor device and manufacture thereof |
JPH11238742A (en) | 1998-02-23 | 1999-08-31 | Denso Corp | Manufacture of silicon carbide semiconductor device |
JP3893725B2 (en) | 1998-03-25 | 2007-03-14 | 株式会社デンソー | Method for manufacturing silicon carbide semiconductor device |
US6100169A (en) | 1998-06-08 | 2000-08-08 | Cree, Inc. | Methods of fabricating silicon carbide power devices by controlled annealing |
US6107142A (en) | 1998-06-08 | 2000-08-22 | Cree Research, Inc. | Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion |
JP4123636B2 (en) | 1998-06-22 | 2008-07-23 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
US6221700B1 (en) | 1998-07-31 | 2001-04-24 | Denso Corporation | Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities |
JP3959856B2 (en) | 1998-07-31 | 2007-08-15 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
JP2000106371A (en) | 1998-07-31 | 2000-04-11 | Denso Corp | Fabrication of silicon carbide semiconductor device |
US6246076B1 (en) | 1998-08-28 | 2001-06-12 | Cree, Inc. | Layered dielectric on silicon carbide semiconductor structures |
JP4186337B2 (en) | 1998-09-30 | 2008-11-26 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
US6228720B1 (en) | 1999-02-23 | 2001-05-08 | Matsushita Electric Industrial Co., Ltd. | Method for making insulated-gate semiconductor element |
US6448160B1 (en) | 1999-04-01 | 2002-09-10 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device to vary operating parameters and resulting device |
US6420225B1 (en) | 1999-04-01 | 2002-07-16 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device |
US6399996B1 (en) | 1999-04-01 | 2002-06-04 | Apd Semiconductor, Inc. | Schottky diode having increased active surface area and method of fabrication |
US6238967B1 (en) | 1999-04-12 | 2001-05-29 | Motorola, Inc. | Method of forming embedded DRAM structure |
US6137139A (en) | 1999-06-03 | 2000-10-24 | Intersil Corporation | Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery |
JP4192353B2 (en) | 1999-09-21 | 2008-12-10 | 株式会社デンソー | Silicon carbide semiconductor device and manufacturing method thereof |
US6303508B1 (en) | 1999-12-16 | 2001-10-16 | Philips Electronics North America Corporation | Superior silicon carbide integrated circuits and method of fabricating |
DE10036208B4 (en) | 2000-07-25 | 2007-04-19 | Siced Electronics Development Gmbh & Co. Kg | Semiconductor structure with buried island area and contact area |
JP2003158075A (en) * | 2001-08-23 | 2003-05-30 | Sumitomo Mitsubishi Silicon Corp | Method for manufacturing semiconductor substrate, method for manufacturing field effect transistor, semiconductor substrate and field effect transistor |
US7067176B2 (en) | 2000-10-03 | 2006-06-27 | Cree, Inc. | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment |
US6767843B2 (en) | 2000-10-03 | 2004-07-27 | Cree, Inc. | Method of N2O growth of an oxide layer on a silicon carbide layer |
US6956238B2 (en) | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
US6610366B2 (en) | 2000-10-03 | 2003-08-26 | Cree, Inc. | Method of N2O annealing an oxide layer on a silicon carbide layer |
US6593620B1 (en) | 2000-10-06 | 2003-07-15 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
US6958508B2 (en) | 2000-10-17 | 2005-10-25 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric memory having ferroelectric capacitor insulative film |
US7126169B2 (en) | 2000-10-23 | 2006-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor element |
JP3881840B2 (en) | 2000-11-14 | 2007-02-14 | 独立行政法人産業技術総合研究所 | Semiconductor device |
JP4792645B2 (en) * | 2001-03-12 | 2011-10-12 | 株式会社デンソー | Method for manufacturing silicon carbide semiconductor device |
US6551865B2 (en) | 2001-03-30 | 2003-04-22 | Denso Corporation | Silicon carbide semiconductor device and method of fabricating the same |
WO2002084745A2 (en) | 2001-04-11 | 2002-10-24 | Silicon Wireless Corporation | Power semiconductor devices and methods of forming same |
JP3908128B2 (en) | 2001-09-07 | 2007-04-25 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
JP2003234301A (en) * | 2001-10-25 | 2003-08-22 | Matsushita Electric Ind Co Ltd | Semiconductor substrate, semiconductor element and method for manufacturing the same |
SE520968C2 (en) | 2001-10-29 | 2003-09-16 | Okmetic Oyj | High-resistance monocrystalline silicon carbide and its method of preparation |
US7221010B2 (en) | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
EP1471168B2 (en) | 2003-04-24 | 2011-08-10 | Norstel AB | Device and method for producing single crystals by vapour deposition |
US7074643B2 (en) | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US7247513B2 (en) | 2003-05-08 | 2007-07-24 | Caracal, Inc. | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
JP3784393B2 (en) * | 2003-07-02 | 2006-06-07 | 松下電器産業株式会社 | Semiconductor device and manufacturing method thereof |
FR2857895B1 (en) * | 2003-07-23 | 2007-01-26 | Soitec Silicon On Insulator | PROCESS FOR PREPARING EPIREADY SURFACE ON SIN THIN FILMS |
JP2005116896A (en) * | 2003-10-09 | 2005-04-28 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing method |
US7118970B2 (en) | 2004-06-22 | 2006-10-10 | Cree, Inc. | Methods of fabricating silicon carbide devices with hybrid well regions |
JP4500928B2 (en) | 2004-10-25 | 2010-07-14 | アルプス電気株式会社 | Mold manufacturing method |
-
2005
- 2005-05-24 US US11/136,057 patent/US7528040B2/en active Active
-
2006
- 2006-03-16 WO PCT/US2006/009493 patent/WO2006127093A2/en active Application Filing
- 2006-03-16 EP EP06738542.7A patent/EP1883951B1/en active Active
- 2006-03-16 TW TW101149631A patent/TWI545640B/en active
- 2006-03-16 EP EP10196317.1A patent/EP2325869B1/en active Active
- 2006-03-16 JP JP2008513462A patent/JP5199072B2/en active Active
- 2006-03-16 TW TW095109031A patent/TWI404131B/en active
-
2009
- 2009-04-16 US US12/424,960 patent/US8188483B2/en active Active
-
2012
- 2012-05-14 US US13/470,600 patent/US8859366B2/en active Active
- 2012-05-15 JP JP2012111459A patent/JP6008571B2/en active Active
-
2014
- 2014-09-10 US US14/482,137 patent/US9142663B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6573534B1 (en) * | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
US6429041B1 (en) * | 2000-07-13 | 2002-08-06 | Cree, Inc. | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
EP1494268A2 (en) * | 2003-07-02 | 2005-01-05 | Matsushita Electric Industrial Co., Ltd. | SiC Semiconductor device and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
EP1883951A2 (en) | 2008-02-06 |
US20060270103A1 (en) | 2006-11-30 |
US7528040B2 (en) | 2009-05-05 |
WO2006127093A2 (en) | 2006-11-30 |
EP2325869A3 (en) | 2012-01-25 |
US9142663B2 (en) | 2015-09-22 |
JP2008543048A (en) | 2008-11-27 |
JP5199072B2 (en) | 2013-05-15 |
US20150028354A1 (en) | 2015-01-29 |
US8859366B2 (en) | 2014-10-14 |
EP1883951B1 (en) | 2019-10-16 |
EP2325869B1 (en) | 2020-01-01 |
JP2012178602A (en) | 2012-09-13 |
TW200701358A (en) | 2007-01-01 |
US20090261351A1 (en) | 2009-10-22 |
TWI404131B (en) | 2013-08-01 |
US20120228638A1 (en) | 2012-09-13 |
TW201314760A (en) | 2013-04-01 |
JP6008571B2 (en) | 2016-10-19 |
US8188483B2 (en) | 2012-05-29 |
EP2325869A2 (en) | 2011-05-25 |
TWI545640B (en) | 2016-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2006127093A3 (en) | Methods of fabricating silicon carbide devices having a smooth surface of the channel regions | |
IN2015DN00261A (en) | ||
TW200503176A (en) | High-performance CMOS SOI devices on hybrid crystal-oriented substrates | |
WO2006086636A3 (en) | Power mos device | |
TW200501412A (en) | PMOS transistor strain optimization with raised junction regions | |
WO2004105090A3 (en) | Structure and method for forming a trench mosfet having self-aligned features | |
WO2009059128A3 (en) | Crystalline-thin-film photovoltaic structures and methods for forming the same | |
WO2006137860A3 (en) | Reduction of a feature dimension in a nano-scale device | |
EP1726043A4 (en) | Self-aligned silicon carbide semiconductor devices and methods of making the same | |
WO2007095061A3 (en) | Device including semiconductor nanocrystals and a layer including a doped organic material and methods | |
WO2008003041A3 (en) | Circuit and method of reducing body diode reverse recovery time of lateral power semiconduction devices | |
TW200620657A (en) | Recessed semiconductor device | |
WO2008051503A3 (en) | Light-emitter-based devices with lattice-mismatched semiconductor structures | |
TW200741978A (en) | Stressor integration and method thereof | |
TW200607094A (en) | Semiconductor device and method of manufacturing thereof | |
TW200802798A (en) | Improved SOI substrates and SOI devices, and methods for forming the same | |
GB2457411A (en) | Stress enhanced transistor and methods for its fabrication | |
SG125927A1 (en) | Silicon-on-insulator ulsi devices with multiple s ilicon film thicknesses | |
TW200642042A (en) | A method for forming a semiconductor device | |
WO2008042492A3 (en) | Termination structures for super junction devices | |
DE602007004839D1 (en) | Deep trench isolation structures in integrated semiconductor devices | |
TW200516666A (en) | Formulation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer | |
WO2004073043A3 (en) | Semiconductor-on-insulator article and method of making same | |
TW200735271A (en) | Semiconductor device fabrication method | |
TW200703644A (en) | Semiconductor device, method for fabricating the semiconductor device and method for designing the semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2006738542 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2008513462 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
NENP | Non-entry into the national phase |
Ref country code: RU |