WO2006130260A3 - Integrated circuit with improved signal noise isolation and method for improving signal noise isolation - Google Patents

Integrated circuit with improved signal noise isolation and method for improving signal noise isolation Download PDF

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Publication number
WO2006130260A3
WO2006130260A3 PCT/US2006/015113 US2006015113W WO2006130260A3 WO 2006130260 A3 WO2006130260 A3 WO 2006130260A3 US 2006015113 W US2006015113 W US 2006015113W WO 2006130260 A3 WO2006130260 A3 WO 2006130260A3
Authority
WO
WIPO (PCT)
Prior art keywords
noise
ground
signal noise
noise isolation
pad
Prior art date
Application number
PCT/US2006/015113
Other languages
French (fr)
Other versions
WO2006130260A2 (en
Inventor
Suman K Banerjee
Enrique Ferrer
Olin L Hartin
Radu M Secareanu
Original Assignee
Freescale Semiconductor Inc
Suman K Banerjee
Enrique Ferrer
Olin L Hartin
Radu M Secareanu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Suman K Banerjee, Enrique Ferrer, Olin L Hartin, Radu M Secareanu filed Critical Freescale Semiconductor Inc
Priority to JP2008514638A priority Critical patent/JP2008543079A/en
Publication of WO2006130260A2 publication Critical patent/WO2006130260A2/en
Publication of WO2006130260A3 publication Critical patent/WO2006130260A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A system-on chip (SOC) (100) and method of isolating noise in a SOC, including a plurality of noise sensitive circuit blocks (120, 220) and ESD protected pads (302, 304, 306, 308, 310, 312, and 314). A VDD isolation pad (302) is connected to an N well ring (124) of the first noise sensitive circuit (120) to collect noise from the substrate (110) and isolate the circuit from the P well region (112). A ground protected pad (304) is connected to an isolated P well (126) of a first noise sensitive circuit (120). The ground pad (304) collects noise from the isolated P well (126) and sends it to ground. A dedicated ground isolation pad (306) is connected to a P well ring (224) of a second noise sensitive circuit (220). The dedicated ground isolation pad (306) collects noise from the P well ring (224) and sends it to ground. The dedicated ground isolation pad (306) and the ground pad (304) collect noise that would normally propagate between the first and second noise sensitive circuits (120, 220) and additional circuits that share the same substrate (110).
PCT/US2006/015113 2005-05-31 2006-04-21 Integrated circuit with improved signal noise isolation and method for improving signal noise isolation WO2006130260A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008514638A JP2008543079A (en) 2005-05-31 2006-04-21 Integrated circuit with improved signal noise isolation and method for improving signal noise isolation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/142,433 US7138686B1 (en) 2005-05-31 2005-05-31 Integrated circuit with improved signal noise isolation and method for improving signal noise isolation
US11/142,433 2005-05-31

Publications (2)

Publication Number Publication Date
WO2006130260A2 WO2006130260A2 (en) 2006-12-07
WO2006130260A3 true WO2006130260A3 (en) 2009-04-30

Family

ID=37423216

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/015113 WO2006130260A2 (en) 2005-05-31 2006-04-21 Integrated circuit with improved signal noise isolation and method for improving signal noise isolation

Country Status (3)

Country Link
US (1) US7138686B1 (en)
JP (1) JP2008543079A (en)
WO (1) WO2006130260A2 (en)

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US8576193B2 (en) * 2008-04-25 2013-11-05 Apple Inc. Brick layout and stackup for a touch screen
US8487898B2 (en) * 2008-04-25 2013-07-16 Apple Inc. Ground guard for capacitive sensing
US20100059294A1 (en) * 2008-09-08 2010-03-11 Apple Inc. Bandwidth enhancement for a touch sensor panel
US8922521B2 (en) 2009-02-02 2014-12-30 Apple Inc. Switching circuitry for touch sensitive display
US9261997B2 (en) * 2009-02-02 2016-02-16 Apple Inc. Touch regions in diamond configuration
US8593410B2 (en) 2009-04-10 2013-11-26 Apple Inc. Touch sensor panel design
US8957874B2 (en) * 2009-06-29 2015-02-17 Apple Inc. Touch sensor panel design
US20110134050A1 (en) * 2009-12-07 2011-06-09 Harley Jonah A Fabrication of touch sensor panel using laser ablation
US9652088B2 (en) 2010-07-30 2017-05-16 Apple Inc. Fabrication of touch sensor panel using laser ablation
US8759871B2 (en) * 2011-07-06 2014-06-24 Taiwan Semiconductor Manufacturing Co., Ltd. Bidirectional dual-SCR circuit for ESD protection
US8551841B2 (en) * 2012-01-06 2013-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. IO ESD device and methods for forming the same
US9329723B2 (en) 2012-04-16 2016-05-03 Apple Inc. Reconstruction of original touch image from differential touch image
US8957496B2 (en) 2013-04-17 2015-02-17 Freescale Semiconductor, Inc. Integrated circuit chip with discontinuous guard ring
CN103887194A (en) * 2013-05-23 2014-06-25 上海华力微电子有限公司 Parallel test device
US9886141B2 (en) 2013-08-16 2018-02-06 Apple Inc. Mutual and self capacitance touch measurements in touch panel
US10936120B2 (en) 2014-05-22 2021-03-02 Apple Inc. Panel bootstraping architectures for in-cell self-capacitance
US10289251B2 (en) 2014-06-27 2019-05-14 Apple Inc. Reducing floating ground effects in pixelated self-capacitance touch screens
US9280251B2 (en) 2014-07-11 2016-03-08 Apple Inc. Funneled touch sensor routing
US9880655B2 (en) 2014-09-02 2018-01-30 Apple Inc. Method of disambiguating water from a finger touch on a touch sensor panel
CN107077260B (en) 2014-09-22 2020-05-12 苹果公司 Touch controller and method for touch sensor panel
CN112379792A (en) 2014-10-27 2021-02-19 苹果公司 Pixelization from capacitive water repellence
AU2016215616B2 (en) 2015-02-02 2018-12-06 Apple Inc. Flexible self-capacitance and mutual capacitance touch sensing system architecture
US10488992B2 (en) 2015-03-10 2019-11-26 Apple Inc. Multi-chip touch architecture for scalability
US10534481B2 (en) 2015-09-30 2020-01-14 Apple Inc. High aspect ratio capacitive sensor panel
US10365773B2 (en) 2015-09-30 2019-07-30 Apple Inc. Flexible scan plan using coarse mutual capacitance and fully-guarded measurements
AU2017208277B2 (en) 2016-09-06 2018-12-20 Apple Inc. Back of cover touch sensors
US10386965B2 (en) 2017-04-20 2019-08-20 Apple Inc. Finger tracking in wet environment
US20200066709A1 (en) * 2018-08-21 2020-02-27 Mediatek Inc. Semiconductor device having noise isolation between power regulator circuit and electrostatic discharge clamp circuit
US11662867B1 (en) 2020-05-30 2023-05-30 Apple Inc. Hover detection on a touch sensor panel

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US5773856A (en) * 1994-10-14 1998-06-30 International Business Machines Corporation Structure for connecting to integrated circuitry
US6891207B2 (en) * 2003-01-09 2005-05-10 International Business Machines Corporation Electrostatic discharge protection networks for triple well semiconductor devices
US20050224882A1 (en) * 2004-04-08 2005-10-13 International Business Machines Corporation Low trigger voltage esd nmosfet triple-well cmos devices

Also Published As

Publication number Publication date
US20060267133A1 (en) 2006-11-30
WO2006130260A2 (en) 2006-12-07
US7138686B1 (en) 2006-11-21
JP2008543079A (en) 2008-11-27

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