WO2006133249A3 - Integrated chemical mechanical polishing composition and process for single platen processing - Google Patents
Integrated chemical mechanical polishing composition and process for single platen processing Download PDFInfo
- Publication number
- WO2006133249A3 WO2006133249A3 PCT/US2006/022037 US2006022037W WO2006133249A3 WO 2006133249 A3 WO2006133249 A3 WO 2006133249A3 US 2006022037 W US2006022037 W US 2006022037W WO 2006133249 A3 WO2006133249 A3 WO 2006133249A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mechanical polishing
- chemical mechanical
- polishing composition
- integrated chemical
- single platen
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/916,727 US20090215269A1 (en) | 2005-06-06 | 2006-06-06 | Integrated chemical mechanical polishing composition and process for single platen processing |
JP2008515851A JP2008546214A (en) | 2005-06-06 | 2006-06-06 | Integrated chemical mechanical polishing composition and process for single platen processing |
EP06772376A EP1899111A2 (en) | 2005-06-06 | 2006-06-06 | Integrated chemical mechanical polishing composition and process for single platen processing |
KR1020087000153A KR101332302B1 (en) | 2005-06-06 | 2006-06-06 | Integrated chemical mechanical polishing composition and process for single platen processing |
IL187914A IL187914A0 (en) | 2005-06-06 | 2007-12-05 | Integrated chemical mechanical polishing composition and process for single platen processing |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68772105P | 2005-06-06 | 2005-06-06 | |
US60/687,721 | 2005-06-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006133249A2 WO2006133249A2 (en) | 2006-12-14 |
WO2006133249A3 true WO2006133249A3 (en) | 2009-04-16 |
Family
ID=37499073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/022037 WO2006133249A2 (en) | 2005-06-06 | 2006-06-06 | Integrated chemical mechanical polishing composition and process for single platen processing |
Country Status (8)
Country | Link |
---|---|
US (1) | US20090215269A1 (en) |
EP (1) | EP1899111A2 (en) |
JP (1) | JP2008546214A (en) |
KR (1) | KR101332302B1 (en) |
CN (1) | CN101511607A (en) |
IL (1) | IL187914A0 (en) |
TW (1) | TWI434957B (en) |
WO (1) | WO2006133249A2 (en) |
Families Citing this family (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007019342A2 (en) | 2005-08-05 | 2007-02-15 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
JP5026710B2 (en) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | Polishing composition |
KR20070088245A (en) * | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | Polishing liquid for metals |
US8551202B2 (en) | 2006-03-23 | 2013-10-08 | Cabot Microelectronics Corporation | Iodate-containing chemical-mechanical polishing compositions and methods |
EP2052048B1 (en) * | 2006-07-12 | 2018-01-24 | Cabot Microelectronics Corporation | Cmp method for metal-containing substrates |
US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
JP5349326B2 (en) | 2006-12-21 | 2013-11-20 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Compositions and methods for selective removal of silicon nitride |
CN101220255B (en) * | 2007-01-11 | 2010-06-30 | 长兴开发科技股份有限公司 | Chemical mechanical grinding fluid and chemical mechanical planarization method |
JP2008192930A (en) * | 2007-02-06 | 2008-08-21 | Fujifilm Corp | Metal polishing composition and chemical mechanical polishing method using the same |
US7976723B2 (en) * | 2007-05-17 | 2011-07-12 | International Business Machines Corporation | Method for kinetically controlled etching of copper |
KR20100037107A (en) * | 2007-06-15 | 2010-04-08 | 바스프 에스이 | Controlling passivating film properties using colloidal particles, polyelectrolytes, and ionic additives for copper chemical mechanical planarization |
TW200916571A (en) * | 2007-08-02 | 2009-04-16 | Advanced Tech Materials | Non-fluoride containing composition for the removal of residue from a microelectronic device |
US8815396B2 (en) * | 2007-10-05 | 2014-08-26 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive particles comprising nano-sized silicon carbide particles surface-coated with silica, and methods using same |
CN101821353A (en) * | 2007-10-05 | 2010-09-01 | 圣戈本陶瓷及塑料股份有限公司 | Polishing of sapphire with composite slurries |
JP2011506110A (en) | 2007-12-06 | 2011-03-03 | フォアサイト プロセッシング,エルエルシー | System and method for conveying a work material mixture containing fluid |
CN101457123B (en) * | 2007-12-14 | 2013-01-16 | 安集微电子(上海)有限公司 | Chemical-mechanical polishing liquid for copper process |
JP5306644B2 (en) * | 2007-12-29 | 2013-10-02 | Hoya株式会社 | Manufacturing method of mask blank substrate, manufacturing method of substrate with multilayer reflective film, manufacturing method of reflecting mask blank, and manufacturing method of reflecting mask |
US20090241988A1 (en) * | 2008-03-31 | 2009-10-01 | Intel Corporation | Photoresist and antireflective layer removal solution and method thereof |
JP5371416B2 (en) * | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | Polishing liquid and polishing method |
TWI454561B (en) * | 2008-12-30 | 2014-10-01 | Uwiz Technology Co Ltd | A polishing composition for planarizing the metal layer |
JP5769284B2 (en) * | 2009-01-20 | 2015-08-26 | 花王株式会社 | Polishing liquid composition for magnetic disk substrate |
US8088690B2 (en) * | 2009-03-31 | 2012-01-03 | International Business Machines Corporation | CMP method |
US20110132868A1 (en) * | 2009-12-03 | 2011-06-09 | Tdk Corporation | Polishing composition for polishing silver and alumina, and polishing method using the same |
CN102093817A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子(上海)有限公司 | Chemical mechanical polishing liquid for polishing tantalum barrier |
JP5657247B2 (en) * | 2009-12-25 | 2015-01-21 | 花王株式会社 | Polishing liquid composition |
JP5795843B2 (en) | 2010-07-26 | 2015-10-14 | 東洋鋼鈑株式会社 | Manufacturing method of hard disk substrate |
JP5601922B2 (en) * | 2010-07-29 | 2014-10-08 | 富士フイルム株式会社 | Polishing liquid and polishing method |
JP6101421B2 (en) | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | Etching solution for copper or copper alloy |
KR20130099948A (en) | 2010-08-20 | 2013-09-06 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Sustainable process for reclaiming precious metals and base metals from e-waste |
TWI502065B (en) | 2010-10-13 | 2015-10-01 | Entegris Inc | Composition for and method of suppressing titanium nitride corrosion |
KR102064487B1 (en) | 2011-01-13 | 2020-01-10 | 엔테그리스, 아이엔씨. | Formulations for the removal of particles generated by cerium-containing solutions |
US8911558B2 (en) * | 2011-03-23 | 2014-12-16 | Nanya Technology Corp. | Post-tungsten CMP cleaning solution and method of using the same |
US8309468B1 (en) * | 2011-04-28 | 2012-11-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys |
US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
US8865013B2 (en) * | 2011-08-15 | 2014-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing tungsten |
JP5933950B2 (en) | 2011-09-30 | 2016-06-15 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Etching solution for copper or copper alloy |
CN103205205B (en) * | 2012-01-16 | 2016-06-22 | 安集微电子(上海)有限公司 | A kind of alkaline chemical mechanical polishing liquid |
US8956974B2 (en) * | 2012-06-29 | 2015-02-17 | Micron Technology, Inc. | Devices, systems, and methods related to planarizing semiconductor devices after forming openings |
JP2014072336A (en) * | 2012-09-28 | 2014-04-21 | Fujimi Inc | Polishing composition |
US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
CN103894918A (en) * | 2012-12-28 | 2014-07-02 | 安集微电子(上海)有限公司 | Chemical mechanical polishing method |
KR101526006B1 (en) * | 2012-12-31 | 2015-06-04 | 제일모직주식회사 | Cmp slurry composition for copper and polishing method using the same |
CN105102584B (en) | 2013-03-04 | 2018-09-21 | 恩特格里斯公司 | Composition and method for selective etch titanium nitride |
KR20210151234A (en) * | 2013-05-14 | 2021-12-13 | 피알시-데소토 인터내쇼날, 인코포레이티드 | Permanganate based conversion coating compositions |
TWI651396B (en) | 2013-06-06 | 2019-02-21 | 美商恩特葛瑞斯股份有限公司 | Compositions and methods for selectively etching titanium nitride |
WO2015017659A1 (en) | 2013-07-31 | 2015-02-05 | Advanced Technology Materials, Inc. | AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY |
SG10201801575YA (en) | 2013-08-30 | 2018-03-28 | Entegris Inc | Compositions and methods for selectively etching titanium nitride |
US10340150B2 (en) | 2013-12-16 | 2019-07-02 | Entegris, Inc. | Ni:NiGe:Ge selective etch formulations and method of using same |
JP6776125B2 (en) | 2013-12-20 | 2020-10-28 | インテグリス・インコーポレーテッド | Use of non-oxidizing strong acids for removal of ion-implanted resists |
KR101409889B1 (en) * | 2013-12-27 | 2014-06-19 | 유비머트리얼즈주식회사 | Polishing slurry and substrate polishing method using the same |
WO2015103146A1 (en) | 2013-12-31 | 2015-07-09 | Advanced Technology Materials, Inc. | Formulations to selectively etch silicon and germanium |
WO2015116818A1 (en) | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
US11127587B2 (en) | 2014-02-05 | 2021-09-21 | Entegris, Inc. | Non-amine post-CMP compositions and method of use |
US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
SG11201702051VA (en) * | 2014-10-14 | 2017-04-27 | Cabot Microelectronics Corp | Nickel phosphorous cmp compositions and methods |
TWI775722B (en) * | 2014-12-22 | 2022-09-01 | 德商巴斯夫歐洲公司 | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and/or cobalt alloy comprising substrates |
JP6849595B2 (en) * | 2014-12-22 | 2021-03-24 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | Use of Chemical Mechanical Polishing (CMP) Composition for Polishing Substrates Containing Cobalt and / or Cobalt Alloys |
CN105401210A (en) * | 2015-11-30 | 2016-03-16 | 惠州市博美化工制品有限公司 | Environment-friendly stainless steel substrate plating stripping agent |
KR102543680B1 (en) * | 2015-12-17 | 2023-06-16 | 솔브레인 주식회사 | Slurry composition for chemical mechanical polishing |
KR102298238B1 (en) * | 2016-06-03 | 2021-09-06 | 후지필름 가부시키가이샤 | Polishing liquid, and chemical mechanical polishing method |
TWI660017B (en) | 2016-07-14 | 2019-05-21 | 卡博特微電子公司 | Alternative oxidizing agents for cobalt cmp |
CN106479373A (en) * | 2016-10-28 | 2017-03-08 | 扬州翠佛堂珠宝有限公司 | A kind of emerald polishing fluid |
KR102524807B1 (en) * | 2016-11-04 | 2023-04-25 | 삼성전자주식회사 | Method of manufacturing a semiconductor device |
US10907073B2 (en) | 2017-01-11 | 2021-02-02 | Fujimi Incorporated | Polishing composition |
WO2018217628A1 (en) * | 2017-05-25 | 2018-11-29 | Fujifilm Planar Solutions, LLC | Chemical mechanical polishing slurry for cobalt applications |
US20210189298A1 (en) * | 2018-04-04 | 2021-06-24 | Basf Se | IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN |
CN108842150A (en) * | 2018-07-23 | 2018-11-20 | 铜陵金力铜材有限公司 | A kind of copper product surface treatment method |
US20200102476A1 (en) * | 2018-09-28 | 2020-04-02 | Versum Materials Us, Llc | Barrier Slurry Removal Rate Improvement |
US10988635B2 (en) * | 2018-12-04 | 2021-04-27 | Cmc Materials, Inc. | Composition and method for copper barrier CMP |
CN109759942B (en) * | 2019-03-08 | 2020-07-21 | 烟台大学 | Chemical abrasive particle flow polishing method for 3D printing titanium alloy |
US20200347493A1 (en) | 2019-05-05 | 2020-11-05 | Applied Materials, Inc. | Reverse Selective Deposition |
WO2021211708A1 (en) * | 2020-04-14 | 2021-10-21 | Entegris, Inc. | Method and composition for etching molybdenum |
KR20220120864A (en) * | 2021-02-24 | 2022-08-31 | 에스케이하이닉스 주식회사 | Slurry composition for polishing silicone oxide film |
TW202323463A (en) * | 2021-08-24 | 2023-06-16 | 日商Jsr股份有限公司 | Chemical mechanical polishing composition, and polishing method |
TW202323464A (en) * | 2021-08-24 | 2023-06-16 | 日商Jsr股份有限公司 | Composition for chemical mechanical polishing and polishing method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6261158B1 (en) * | 1998-12-16 | 2001-07-17 | Speedfam-Ipec | Multi-step chemical mechanical polishing |
US20020019202A1 (en) * | 1998-06-10 | 2002-02-14 | Thomas Terence M. | Control of removal rates in CMP |
US6709316B1 (en) * | 2000-10-27 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for two-step barrier layer polishing |
US20040082275A1 (en) * | 2002-10-28 | 2004-04-29 | Arch Specialty Chemicals, Inc. | Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers |
US20050076578A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5876490A (en) * | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
WO1998048453A1 (en) * | 1997-04-23 | 1998-10-29 | Advanced Chemical Systems International, Inc. | Planarization compositions for cmp of interlayer dielectrics |
US6001730A (en) * | 1997-10-20 | 1999-12-14 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers |
US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
US6096652A (en) * | 1997-11-03 | 2000-08-01 | Motorola, Inc. | Method of chemical mechanical planarization using copper coordinating ligands |
US6346741B1 (en) * | 1997-11-20 | 2002-02-12 | Advanced Technology Materials, Inc. | Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same |
US5976928A (en) * | 1997-11-20 | 1999-11-02 | Advanced Technology Materials, Inc. | Chemical mechanical polishing of FeRAM capacitors |
US5985748A (en) * | 1997-12-01 | 1999-11-16 | Motorola, Inc. | Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process |
KR100581649B1 (en) * | 1998-06-10 | 2006-05-23 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | Composition and Method for Polishing in Metal CMP |
JP4053165B2 (en) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method using the same |
US6395194B1 (en) * | 1998-12-18 | 2002-05-28 | Intersurface Dynamics Inc. | Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same |
KR100447551B1 (en) * | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | Composite Particles and Production Process Thereof, Aqueous Dispersion, Aqueous Dispersion Composition for Chemical Mechanical Polishing, and Process for Manufacture of Semiconductor Apparatus |
TW486514B (en) * | 1999-06-16 | 2002-05-11 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
US6274478B1 (en) * | 1999-07-13 | 2001-08-14 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
US6630433B2 (en) * | 1999-07-19 | 2003-10-07 | Honeywell International Inc. | Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
US6436302B1 (en) * | 1999-08-23 | 2002-08-20 | Applied Materials, Inc. | Post CU CMP polishing for reduced defects |
TW499471B (en) * | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
JP4505891B2 (en) * | 1999-09-06 | 2010-07-21 | Jsr株式会社 | Chemical mechanical polishing aqueous dispersion used in the manufacture of semiconductor devices |
JP4264781B2 (en) * | 1999-09-20 | 2009-05-20 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method |
US6368955B1 (en) * | 1999-11-22 | 2002-04-09 | Lucent Technologies, Inc. | Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities |
AU4309601A (en) * | 1999-12-07 | 2001-06-18 | Cabot Microelectronics Corporation | Chemical-mechanical polishing method |
US6599837B1 (en) * | 2000-02-29 | 2003-07-29 | Agere Systems Guardian Corp. | Chemical mechanical polishing composition and method of polishing metal layers using same |
US6409781B1 (en) * | 2000-05-01 | 2002-06-25 | Advanced Technology Materials, Inc. | Polishing slurries for copper and associated materials |
JP2002075927A (en) * | 2000-08-24 | 2002-03-15 | Fujimi Inc | Composition for polishing and polishing method using it |
JP3768402B2 (en) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | Chemical mechanical polishing slurry |
JP3816743B2 (en) * | 2000-11-24 | 2006-08-30 | Necエレクトロニクス株式会社 | Chemical mechanical polishing slurry |
JP2002164307A (en) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | Composition for polishing, and polishing method using the composition |
JP3825246B2 (en) * | 2000-11-24 | 2006-09-27 | Necエレクトロニクス株式会社 | Chemical mechanical polishing slurry |
JP2002231666A (en) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | Composition for polishing, and polishing method using the composition |
SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
US7029373B2 (en) * | 2001-08-14 | 2006-04-18 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
US6692546B2 (en) * | 2001-08-14 | 2004-02-17 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
US6800218B2 (en) * | 2001-08-23 | 2004-10-05 | Advanced Technology Materials, Inc. | Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same |
US6802983B2 (en) * | 2001-09-17 | 2004-10-12 | Advanced Technology Materials, Inc. | Preparation of high performance silica slurry using a centrifuge |
JP3899456B2 (en) * | 2001-10-19 | 2007-03-28 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method using the same |
US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
US6641630B1 (en) * | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
JP4304154B2 (en) * | 2002-06-07 | 2009-07-29 | マリンクロッド・ベイカー・インコーポレイテッド | Microelectronic cleaning composition containing an oxidizing agent and an organic solvent |
US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
US7419911B2 (en) * | 2003-11-10 | 2008-09-02 | Ekc Technology, Inc. | Compositions and methods for rapidly removing overfilled substrates |
US20050263407A1 (en) * | 2004-05-28 | 2005-12-01 | Cabot Microelectronics Corporation | Electrochemical-mechanical polishing composition and method for using the same |
US8038752B2 (en) * | 2004-10-27 | 2011-10-18 | Cabot Microelectronics Corporation | Metal ion-containing CMP composition and method for using the same |
-
2006
- 2006-06-06 WO PCT/US2006/022037 patent/WO2006133249A2/en active Application Filing
- 2006-06-06 KR KR1020087000153A patent/KR101332302B1/en not_active IP Right Cessation
- 2006-06-06 TW TW095119999A patent/TWI434957B/en not_active IP Right Cessation
- 2006-06-06 JP JP2008515851A patent/JP2008546214A/en not_active Withdrawn
- 2006-06-06 CN CNA2006800281916A patent/CN101511607A/en active Pending
- 2006-06-06 US US11/916,727 patent/US20090215269A1/en not_active Abandoned
- 2006-06-06 EP EP06772376A patent/EP1899111A2/en not_active Withdrawn
-
2007
- 2007-12-05 IL IL187914A patent/IL187914A0/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020019202A1 (en) * | 1998-06-10 | 2002-02-14 | Thomas Terence M. | Control of removal rates in CMP |
US6261158B1 (en) * | 1998-12-16 | 2001-07-17 | Speedfam-Ipec | Multi-step chemical mechanical polishing |
US6709316B1 (en) * | 2000-10-27 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for two-step barrier layer polishing |
US20040082275A1 (en) * | 2002-10-28 | 2004-04-29 | Arch Specialty Chemicals, Inc. | Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers |
US20050076578A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
Also Published As
Publication number | Publication date |
---|---|
CN101511607A (en) | 2009-08-19 |
WO2006133249A2 (en) | 2006-12-14 |
KR20080016934A (en) | 2008-02-22 |
TW200706703A (en) | 2007-02-16 |
TWI434957B (en) | 2014-04-21 |
KR101332302B1 (en) | 2013-11-25 |
JP2008546214A (en) | 2008-12-18 |
US20090215269A1 (en) | 2009-08-27 |
EP1899111A2 (en) | 2008-03-19 |
IL187914A0 (en) | 2008-03-20 |
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