WO2006133249A3 - Integrated chemical mechanical polishing composition and process for single platen processing - Google Patents

Integrated chemical mechanical polishing composition and process for single platen processing Download PDF

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Publication number
WO2006133249A3
WO2006133249A3 PCT/US2006/022037 US2006022037W WO2006133249A3 WO 2006133249 A3 WO2006133249 A3 WO 2006133249A3 US 2006022037 W US2006022037 W US 2006022037W WO 2006133249 A3 WO2006133249 A3 WO 2006133249A3
Authority
WO
WIPO (PCT)
Prior art keywords
mechanical polishing
chemical mechanical
polishing composition
integrated chemical
single platen
Prior art date
Application number
PCT/US2006/022037
Other languages
French (fr)
Other versions
WO2006133249A2 (en
Inventor
Michael Darsillo
Peter Wrschka
James Welch
Jeffrey Giles
Michele Stawasz
Karl Boggs
Original Assignee
Advanced Tech Materials
Michael Darsillo
Peter Wrschka
James Welch
Jeffrey Giles
Michele Stawasz
Karl Boggs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials, Michael Darsillo, Peter Wrschka, James Welch, Jeffrey Giles, Michele Stawasz, Karl Boggs filed Critical Advanced Tech Materials
Priority to US11/916,727 priority Critical patent/US20090215269A1/en
Priority to JP2008515851A priority patent/JP2008546214A/en
Priority to EP06772376A priority patent/EP1899111A2/en
Priority to KR1020087000153A priority patent/KR101332302B1/en
Publication of WO2006133249A2 publication Critical patent/WO2006133249A2/en
Priority to IL187914A priority patent/IL187914A0/en
Publication of WO2006133249A3 publication Critical patent/WO2006133249A3/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472Non-aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Abstract

Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad.
PCT/US2006/022037 2005-06-06 2006-06-06 Integrated chemical mechanical polishing composition and process for single platen processing WO2006133249A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US11/916,727 US20090215269A1 (en) 2005-06-06 2006-06-06 Integrated chemical mechanical polishing composition and process for single platen processing
JP2008515851A JP2008546214A (en) 2005-06-06 2006-06-06 Integrated chemical mechanical polishing composition and process for single platen processing
EP06772376A EP1899111A2 (en) 2005-06-06 2006-06-06 Integrated chemical mechanical polishing composition and process for single platen processing
KR1020087000153A KR101332302B1 (en) 2005-06-06 2006-06-06 Integrated chemical mechanical polishing composition and process for single platen processing
IL187914A IL187914A0 (en) 2005-06-06 2007-12-05 Integrated chemical mechanical polishing composition and process for single platen processing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68772105P 2005-06-06 2005-06-06
US60/687,721 2005-06-06

Publications (2)

Publication Number Publication Date
WO2006133249A2 WO2006133249A2 (en) 2006-12-14
WO2006133249A3 true WO2006133249A3 (en) 2009-04-16

Family

ID=37499073

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/022037 WO2006133249A2 (en) 2005-06-06 2006-06-06 Integrated chemical mechanical polishing composition and process for single platen processing

Country Status (8)

Country Link
US (1) US20090215269A1 (en)
EP (1) EP1899111A2 (en)
JP (1) JP2008546214A (en)
KR (1) KR101332302B1 (en)
CN (1) CN101511607A (en)
IL (1) IL187914A0 (en)
TW (1) TWI434957B (en)
WO (1) WO2006133249A2 (en)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007019342A2 (en) 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
JP5026710B2 (en) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド Polishing composition
KR20070088245A (en) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 Polishing liquid for metals
US8551202B2 (en) 2006-03-23 2013-10-08 Cabot Microelectronics Corporation Iodate-containing chemical-mechanical polishing compositions and methods
EP2052048B1 (en) * 2006-07-12 2018-01-24 Cabot Microelectronics Corporation Cmp method for metal-containing substrates
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
JP5349326B2 (en) 2006-12-21 2013-11-20 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド Compositions and methods for selective removal of silicon nitride
CN101220255B (en) * 2007-01-11 2010-06-30 长兴开发科技股份有限公司 Chemical mechanical grinding fluid and chemical mechanical planarization method
JP2008192930A (en) * 2007-02-06 2008-08-21 Fujifilm Corp Metal polishing composition and chemical mechanical polishing method using the same
US7976723B2 (en) * 2007-05-17 2011-07-12 International Business Machines Corporation Method for kinetically controlled etching of copper
KR20100037107A (en) * 2007-06-15 2010-04-08 바스프 에스이 Controlling passivating film properties using colloidal particles, polyelectrolytes, and ionic additives for copper chemical mechanical planarization
TW200916571A (en) * 2007-08-02 2009-04-16 Advanced Tech Materials Non-fluoride containing composition for the removal of residue from a microelectronic device
US8815396B2 (en) * 2007-10-05 2014-08-26 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles comprising nano-sized silicon carbide particles surface-coated with silica, and methods using same
CN101821353A (en) * 2007-10-05 2010-09-01 圣戈本陶瓷及塑料股份有限公司 Polishing of sapphire with composite slurries
JP2011506110A (en) 2007-12-06 2011-03-03 フォアサイト プロセッシング,エルエルシー System and method for conveying a work material mixture containing fluid
CN101457123B (en) * 2007-12-14 2013-01-16 安集微电子(上海)有限公司 Chemical-mechanical polishing liquid for copper process
JP5306644B2 (en) * 2007-12-29 2013-10-02 Hoya株式会社 Manufacturing method of mask blank substrate, manufacturing method of substrate with multilayer reflective film, manufacturing method of reflecting mask blank, and manufacturing method of reflecting mask
US20090241988A1 (en) * 2008-03-31 2009-10-01 Intel Corporation Photoresist and antireflective layer removal solution and method thereof
JP5371416B2 (en) * 2008-12-25 2013-12-18 富士フイルム株式会社 Polishing liquid and polishing method
TWI454561B (en) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
JP5769284B2 (en) * 2009-01-20 2015-08-26 花王株式会社 Polishing liquid composition for magnetic disk substrate
US8088690B2 (en) * 2009-03-31 2012-01-03 International Business Machines Corporation CMP method
US20110132868A1 (en) * 2009-12-03 2011-06-09 Tdk Corporation Polishing composition for polishing silver and alumina, and polishing method using the same
CN102093817A (en) * 2009-12-11 2011-06-15 安集微电子(上海)有限公司 Chemical mechanical polishing liquid for polishing tantalum barrier
JP5657247B2 (en) * 2009-12-25 2015-01-21 花王株式会社 Polishing liquid composition
JP5795843B2 (en) 2010-07-26 2015-10-14 東洋鋼鈑株式会社 Manufacturing method of hard disk substrate
JP5601922B2 (en) * 2010-07-29 2014-10-08 富士フイルム株式会社 Polishing liquid and polishing method
JP6101421B2 (en) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド Etching solution for copper or copper alloy
KR20130099948A (en) 2010-08-20 2013-09-06 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Sustainable process for reclaiming precious metals and base metals from e-waste
TWI502065B (en) 2010-10-13 2015-10-01 Entegris Inc Composition for and method of suppressing titanium nitride corrosion
KR102064487B1 (en) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. Formulations for the removal of particles generated by cerium-containing solutions
US8911558B2 (en) * 2011-03-23 2014-12-16 Nanya Technology Corp. Post-tungsten CMP cleaning solution and method of using the same
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド Etching solution for copper or copper alloy
CN103205205B (en) * 2012-01-16 2016-06-22 安集微电子(上海)有限公司 A kind of alkaline chemical mechanical polishing liquid
US8956974B2 (en) * 2012-06-29 2015-02-17 Micron Technology, Inc. Devices, systems, and methods related to planarizing semiconductor devices after forming openings
JP2014072336A (en) * 2012-09-28 2014-04-21 Fujimi Inc Polishing composition
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
CN103894918A (en) * 2012-12-28 2014-07-02 安集微电子(上海)有限公司 Chemical mechanical polishing method
KR101526006B1 (en) * 2012-12-31 2015-06-04 제일모직주식회사 Cmp slurry composition for copper and polishing method using the same
CN105102584B (en) 2013-03-04 2018-09-21 恩特格里斯公司 Composition and method for selective etch titanium nitride
KR20210151234A (en) * 2013-05-14 2021-12-13 피알시-데소토 인터내쇼날, 인코포레이티드 Permanganate based conversion coating compositions
TWI651396B (en) 2013-06-06 2019-02-21 美商恩特葛瑞斯股份有限公司 Compositions and methods for selectively etching titanium nitride
WO2015017659A1 (en) 2013-07-31 2015-02-05 Advanced Technology Materials, Inc. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
SG10201801575YA (en) 2013-08-30 2018-03-28 Entegris Inc Compositions and methods for selectively etching titanium nitride
US10340150B2 (en) 2013-12-16 2019-07-02 Entegris, Inc. Ni:NiGe:Ge selective etch formulations and method of using same
JP6776125B2 (en) 2013-12-20 2020-10-28 インテグリス・インコーポレーテッド Use of non-oxidizing strong acids for removal of ion-implanted resists
KR101409889B1 (en) * 2013-12-27 2014-06-19 유비머트리얼즈주식회사 Polishing slurry and substrate polishing method using the same
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9583359B2 (en) * 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
SG11201702051VA (en) * 2014-10-14 2017-04-27 Cabot Microelectronics Corp Nickel phosphorous cmp compositions and methods
TWI775722B (en) * 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and/or cobalt alloy comprising substrates
JP6849595B2 (en) * 2014-12-22 2021-03-24 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se Use of Chemical Mechanical Polishing (CMP) Composition for Polishing Substrates Containing Cobalt and / or Cobalt Alloys
CN105401210A (en) * 2015-11-30 2016-03-16 惠州市博美化工制品有限公司 Environment-friendly stainless steel substrate plating stripping agent
KR102543680B1 (en) * 2015-12-17 2023-06-16 솔브레인 주식회사 Slurry composition for chemical mechanical polishing
KR102298238B1 (en) * 2016-06-03 2021-09-06 후지필름 가부시키가이샤 Polishing liquid, and chemical mechanical polishing method
TWI660017B (en) 2016-07-14 2019-05-21 卡博特微電子公司 Alternative oxidizing agents for cobalt cmp
CN106479373A (en) * 2016-10-28 2017-03-08 扬州翠佛堂珠宝有限公司 A kind of emerald polishing fluid
KR102524807B1 (en) * 2016-11-04 2023-04-25 삼성전자주식회사 Method of manufacturing a semiconductor device
US10907073B2 (en) 2017-01-11 2021-02-02 Fujimi Incorporated Polishing composition
WO2018217628A1 (en) * 2017-05-25 2018-11-29 Fujifilm Planar Solutions, LLC Chemical mechanical polishing slurry for cobalt applications
US20210189298A1 (en) * 2018-04-04 2021-06-24 Basf Se IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN
CN108842150A (en) * 2018-07-23 2018-11-20 铜陵金力铜材有限公司 A kind of copper product surface treatment method
US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
US10988635B2 (en) * 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
CN109759942B (en) * 2019-03-08 2020-07-21 烟台大学 Chemical abrasive particle flow polishing method for 3D printing titanium alloy
US20200347493A1 (en) 2019-05-05 2020-11-05 Applied Materials, Inc. Reverse Selective Deposition
WO2021211708A1 (en) * 2020-04-14 2021-10-21 Entegris, Inc. Method and composition for etching molybdenum
KR20220120864A (en) * 2021-02-24 2022-08-31 에스케이하이닉스 주식회사 Slurry composition for polishing silicone oxide film
TW202323463A (en) * 2021-08-24 2023-06-16 日商Jsr股份有限公司 Chemical mechanical polishing composition, and polishing method
TW202323464A (en) * 2021-08-24 2023-06-16 日商Jsr股份有限公司 Composition for chemical mechanical polishing and polishing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261158B1 (en) * 1998-12-16 2001-07-17 Speedfam-Ipec Multi-step chemical mechanical polishing
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US20040082275A1 (en) * 2002-10-28 2004-04-29 Arch Specialty Chemicals, Inc. Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers
US20050076578A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US5876490A (en) * 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
WO1998048453A1 (en) * 1997-04-23 1998-10-29 Advanced Chemical Systems International, Inc. Planarization compositions for cmp of interlayer dielectrics
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6096652A (en) * 1997-11-03 2000-08-01 Motorola, Inc. Method of chemical mechanical planarization using copper coordinating ligands
US6346741B1 (en) * 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US5985748A (en) * 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
KR100581649B1 (en) * 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 Composition and Method for Polishing in Metal CMP
JP4053165B2 (en) * 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same
US6395194B1 (en) * 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
KR100447551B1 (en) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 Composite Particles and Production Process Thereof, Aqueous Dispersion, Aqueous Dispersion Composition for Chemical Mechanical Polishing, and Process for Manufacture of Semiconductor Apparatus
TW486514B (en) * 1999-06-16 2002-05-11 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6274478B1 (en) * 1999-07-13 2001-08-14 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6436302B1 (en) * 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
TW499471B (en) * 1999-09-01 2002-08-21 Eternal Chemical Co Ltd Chemical mechanical/abrasive composition for semiconductor processing
JP4505891B2 (en) * 1999-09-06 2010-07-21 Jsr株式会社 Chemical mechanical polishing aqueous dispersion used in the manufacture of semiconductor devices
JP4264781B2 (en) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド Polishing composition and polishing method
US6368955B1 (en) * 1999-11-22 2002-04-09 Lucent Technologies, Inc. Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities
AU4309601A (en) * 1999-12-07 2001-06-18 Cabot Microelectronics Corporation Chemical-mechanical polishing method
US6599837B1 (en) * 2000-02-29 2003-07-29 Agere Systems Guardian Corp. Chemical mechanical polishing composition and method of polishing metal layers using same
US6409781B1 (en) * 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
JP2002075927A (en) * 2000-08-24 2002-03-15 Fujimi Inc Composition for polishing and polishing method using it
JP3768402B2 (en) * 2000-11-24 2006-04-19 Necエレクトロニクス株式会社 Chemical mechanical polishing slurry
JP3816743B2 (en) * 2000-11-24 2006-08-30 Necエレクトロニクス株式会社 Chemical mechanical polishing slurry
JP2002164307A (en) * 2000-11-24 2002-06-07 Fujimi Inc Composition for polishing, and polishing method using the composition
JP3825246B2 (en) * 2000-11-24 2006-09-27 Necエレクトロニクス株式会社 Chemical mechanical polishing slurry
JP2002231666A (en) * 2001-01-31 2002-08-16 Fujimi Inc Composition for polishing, and polishing method using the composition
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US7029373B2 (en) * 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6802983B2 (en) * 2001-09-17 2004-10-12 Advanced Technology Materials, Inc. Preparation of high performance silica slurry using a centrifuge
JP3899456B2 (en) * 2001-10-19 2007-03-28 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6641630B1 (en) * 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
JP4304154B2 (en) * 2002-06-07 2009-07-29 マリンクロッド・ベイカー・インコーポレイテッド Microelectronic cleaning composition containing an oxidizing agent and an organic solvent
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
US20050263407A1 (en) * 2004-05-28 2005-12-01 Cabot Microelectronics Corporation Electrochemical-mechanical polishing composition and method for using the same
US8038752B2 (en) * 2004-10-27 2011-10-18 Cabot Microelectronics Corporation Metal ion-containing CMP composition and method for using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
US6261158B1 (en) * 1998-12-16 2001-07-17 Speedfam-Ipec Multi-step chemical mechanical polishing
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US20040082275A1 (en) * 2002-10-28 2004-04-29 Arch Specialty Chemicals, Inc. Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers
US20050076578A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole

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TWI434957B (en) 2014-04-21
KR101332302B1 (en) 2013-11-25
JP2008546214A (en) 2008-12-18
US20090215269A1 (en) 2009-08-27
EP1899111A2 (en) 2008-03-19
IL187914A0 (en) 2008-03-20

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