WO2006135377A3 - Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells - Google Patents
Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells Download PDFInfo
- Publication number
- WO2006135377A3 WO2006135377A3 PCT/US2005/026412 US2005026412W WO2006135377A3 WO 2006135377 A3 WO2006135377 A3 WO 2006135377A3 US 2005026412 W US2005026412 W US 2005026412W WO 2006135377 A3 WO2006135377 A3 WO 2006135377A3
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- WIPO (PCT)
- Prior art keywords
- nanoparticles
- coated
- quantum dots
- solution
- coated nanoparticles
- Prior art date
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- 239000002105 nanoparticle Substances 0.000 title abstract 9
- 239000002096 quantum dot Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002270 dispersing agent Substances 0.000 abstract 1
- 239000003973 paint Substances 0.000 abstract 1
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- B22F1/17—Metallic particles coated with metal
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
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Abstract
CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/943,657 | 2004-09-18 | ||
US10/943,657 US7306823B2 (en) | 2004-09-18 | 2004-09-18 | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
Publications (2)
Publication Number | Publication Date |
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WO2006135377A2 WO2006135377A2 (en) | 2006-12-21 |
WO2006135377A3 true WO2006135377A3 (en) | 2009-06-04 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/US2005/026412 WO2006135377A2 (en) | 2004-09-18 | 2005-07-26 | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
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US (3) | US7306823B2 (en) |
WO (1) | WO2006135377A2 (en) |
Families Citing this family (239)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8294025B2 (en) * | 2002-06-08 | 2012-10-23 | Solarity, Llc | Lateral collection photovoltaics |
US8642455B2 (en) * | 2004-02-19 | 2014-02-04 | Matthew R. Robinson | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US7700464B2 (en) | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US7306823B2 (en) | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US8846141B1 (en) | 2004-02-19 | 2014-09-30 | Aeris Capital Sustainable Ip Ltd. | High-throughput printing of semiconductor precursor layer from microflake particles |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8372734B2 (en) | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
CN1232608C (en) * | 2004-04-06 | 2005-12-21 | 中国科学院长春应用化学研究所 | Method for synthesizing nano semiconductor luminescence material on interface bewteen liquid-liquid |
US8541048B1 (en) | 2004-09-18 | 2013-09-24 | Nanosolar, Inc. | Formation of photovoltaic absorber layers on foil substrates |
US20090032108A1 (en) * | 2007-03-30 | 2009-02-05 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
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US8193442B2 (en) | 2012-06-05 |
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