WO2006135746A3 - Charge balance field effect transistor - Google Patents

Charge balance field effect transistor Download PDF

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Publication number
WO2006135746A3
WO2006135746A3 PCT/US2006/022474 US2006022474W WO2006135746A3 WO 2006135746 A3 WO2006135746 A3 WO 2006135746A3 US 2006022474 W US2006022474 W US 2006022474W WO 2006135746 A3 WO2006135746 A3 WO 2006135746A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductivity type
trench
field effect
effect transistor
semiconductor region
Prior art date
Application number
PCT/US2006/022474
Other languages
French (fr)
Other versions
WO2006135746A2 (en
Inventor
Hamza Yilmaz
Daniel Calafut
Steven P Sapp
Nathan Kraft
Ashok Challa
Original Assignee
Fairchild Semiconductor
Hamza Yilmaz
Daniel Calafut
Steven P Sapp
Nathan Kraft
Ashok Challa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor, Hamza Yilmaz, Daniel Calafut, Steven P Sapp, Nathan Kraft, Ashok Challa filed Critical Fairchild Semiconductor
Priority to AT0923806A priority Critical patent/AT504290A2/en
Priority to KR1020127027097A priority patent/KR101296984B1/en
Priority to DE112006001516T priority patent/DE112006001516T5/en
Priority to CN2006800206309A priority patent/CN101536163B/en
Priority to JP2008515966A priority patent/JP2008546216A/en
Priority to KR1020087000543A priority patent/KR101296922B1/en
Publication of WO2006135746A2 publication Critical patent/WO2006135746A2/en
Publication of WO2006135746A3 publication Critical patent/WO2006135746A3/en

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66409—Unipolar field-effect transistors
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Abstract

A field effect transistor is formed as follows. A semiconductor region of a first conductivity type with an epitaxial layer of a second conductivity extending over the semiconductor region is provided. A trench extending through the epitaxial layer and terminating in the semiconductor region is formed. A two-pass angled implant of dopants of the first conductivity type is carried out to thereby form a region of first conductivity type along the trench sidewalls. A threshold voltage adjust implant of dopants of the second conductivity type is carried out to thereby convert a conductivity type of a portion of the region of first conductivity type extending along upper sidewalls of the trench to the second conductivity type. Source regions of the first conductivity type flanking each side of the trench are formed.
PCT/US2006/022474 2005-06-10 2006-06-08 Charge balance field effect transistor WO2006135746A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AT0923806A AT504290A2 (en) 2005-06-10 2006-06-08 FIELD EFFECT TRANSISTOR WITH LOAD BALANCE
KR1020127027097A KR101296984B1 (en) 2005-06-10 2006-06-08 Charge balance field effect transistor
DE112006001516T DE112006001516T5 (en) 2005-06-10 2006-06-08 Field effect transistor with charge balance
CN2006800206309A CN101536163B (en) 2005-06-10 2006-06-08 Charge balance field effect transistor
JP2008515966A JP2008546216A (en) 2005-06-10 2006-06-08 Charge balanced field effect transistor
KR1020087000543A KR101296922B1 (en) 2005-06-10 2006-06-08 Charge balance field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68922905P 2005-06-10 2005-06-10
US60/689,229 2005-06-10

Publications (2)

Publication Number Publication Date
WO2006135746A2 WO2006135746A2 (en) 2006-12-21
WO2006135746A3 true WO2006135746A3 (en) 2009-04-30

Family

ID=37532833

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/022474 WO2006135746A2 (en) 2005-06-10 2006-06-08 Charge balance field effect transistor

Country Status (8)

Country Link
US (8) US7393749B2 (en)
JP (1) JP2008546216A (en)
KR (2) KR101296984B1 (en)
CN (2) CN103094348B (en)
AT (1) AT504290A2 (en)
DE (1) DE112006001516T5 (en)
TW (2) TWI416741B (en)
WO (1) WO2006135746A2 (en)

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