WO2006138457A3 - Isolating chip-to-chip contact - Google Patents

Isolating chip-to-chip contact Download PDF

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Publication number
WO2006138457A3
WO2006138457A3 PCT/US2006/023297 US2006023297W WO2006138457A3 WO 2006138457 A3 WO2006138457 A3 WO 2006138457A3 US 2006023297 W US2006023297 W US 2006023297W WO 2006138457 A3 WO2006138457 A3 WO 2006138457A3
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WO
WIPO (PCT)
Prior art keywords
chip
isolating
contact
area
slabs
Prior art date
Application number
PCT/US2006/023297
Other languages
French (fr)
Other versions
WO2006138457A2 (en
Inventor
John Trezza
Original Assignee
Cubic Wafer Inc
John Trezza
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cubic Wafer Inc, John Trezza filed Critical Cubic Wafer Inc
Priority to CN2006800293133A priority Critical patent/CN101258593B/en
Priority to JP2008517101A priority patent/JP5401093B2/en
Publication of WO2006138457A2 publication Critical patent/WO2006138457A2/en
Publication of WO2006138457A3 publication Critical patent/WO2006138457A3/en

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Abstract

An apparatus has two slabs of substrate material joined to each other, the two slabs including a pair of contacts joined to each other having a shape separating a first area from a second area.
PCT/US2006/023297 2005-06-14 2006-06-14 Isolating chip-to-chip contact WO2006138457A2 (en)

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CN2006800293133A CN101258593B (en) 2005-06-14 2006-06-14 Isolated chip-to-chip contact
JP2008517101A JP5401093B2 (en) 2005-06-14 2006-06-14 Chip-to-chip contact isolation

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US69075905P 2005-06-14 2005-06-14
US60/690,759 2005-06-14
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US11/422,551 US7847412B2 (en) 2005-06-14 2006-06-06 Isolating chip-to-chip contact

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WO2006138457A3 true WO2006138457A3 (en) 2007-02-22

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JP (1) JP5401093B2 (en)
KR (1) KR101090616B1 (en)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8846445B2 (en) 2005-06-14 2014-09-30 Cufer Asset Ltd. L.L.C. Inverse chip connector

Families Citing this family (208)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7506020B2 (en) 1996-11-29 2009-03-17 Frampton E Ellis Global network computers
US7926097B2 (en) 1996-11-29 2011-04-12 Ellis Iii Frampton E Computer or microchip protected from the internet by internal hardware
US8225003B2 (en) 1996-11-29 2012-07-17 Ellis Iii Frampton E Computers and microchips with a portion protected by an internal hardware firewall
US7805756B2 (en) 1996-11-29 2010-09-28 Frampton E Ellis Microchips with inner firewalls, faraday cages, and/or photovoltaic cells
US20050180095A1 (en) 1996-11-29 2005-08-18 Ellis Frampton E. Global network computers
US6725250B1 (en) * 1996-11-29 2004-04-20 Ellis, Iii Frampton E. Global network computers
US6167428A (en) 1996-11-29 2000-12-26 Ellis; Frampton E. Personal computer microprocessor firewalls for internet distributed processing
US8084866B2 (en) 2003-12-10 2011-12-27 Micron Technology, Inc. Microelectronic devices and methods for filling vias in microelectronic devices
US7091124B2 (en) 2003-11-13 2006-08-15 Micron Technology, Inc. Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices
US20050247894A1 (en) 2004-05-05 2005-11-10 Watkins Charles M Systems and methods for forming apertures in microfeature workpieces
US7045827B2 (en) * 2004-06-24 2006-05-16 Gallup Kendra J Lids for wafer-scale optoelectronic packages
US7232754B2 (en) 2004-06-29 2007-06-19 Micron Technology, Inc. Microelectronic devices and methods for forming interconnects in microelectronic devices
SG120200A1 (en) 2004-08-27 2006-03-28 Micron Technology Inc Slanted vias for electrical circuits on circuit boards and other substrates
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7271482B2 (en) 2004-12-30 2007-09-18 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US7781886B2 (en) 2005-06-14 2010-08-24 John Trezza Electronic chip contact structure
US7767493B2 (en) 2005-06-14 2010-08-03 John Trezza Post & penetration interconnection
US7560813B2 (en) 2005-06-14 2009-07-14 John Trezza Chip-based thermo-stack
US7851348B2 (en) 2005-06-14 2010-12-14 Abhay Misra Routingless chip architecture
US7838997B2 (en) 2005-06-14 2010-11-23 John Trezza Remote chip attachment
US7786592B2 (en) 2005-06-14 2010-08-31 John Trezza Chip capacitive coupling
US7687400B2 (en) 2005-06-14 2010-03-30 John Trezza Side stacking apparatus and method
US8456015B2 (en) 2005-06-14 2013-06-04 Cufer Asset Ltd. L.L.C. Triaxial through-chip connection
US7795134B2 (en) 2005-06-28 2010-09-14 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
JP4828537B2 (en) * 2005-08-26 2011-11-30 株式会社日立製作所 Semiconductor device
US7863187B2 (en) * 2005-09-01 2011-01-04 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7622377B2 (en) * 2005-09-01 2009-11-24 Micron Technology, Inc. Microfeature workpiece substrates having through-substrate vias, and associated methods of formation
US7262134B2 (en) 2005-09-01 2007-08-28 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7453154B2 (en) * 2006-03-29 2008-11-18 Delphi Technologies, Inc. Carbon nanotube via interconnect
US7749899B2 (en) 2006-06-01 2010-07-06 Micron Technology, Inc. Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces
US7687397B2 (en) 2006-06-06 2010-03-30 John Trezza Front-end processed wafer having through-chip connections
US7629249B2 (en) 2006-08-28 2009-12-08 Micron Technology, Inc. Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods
US7902643B2 (en) 2006-08-31 2011-03-08 Micron Technology, Inc. Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods
EP2097924A4 (en) * 2006-12-29 2012-01-04 Cufer Asset Ltd Llc Front-end processed wafer having through-chip connections
US7863189B2 (en) * 2007-01-05 2011-01-04 International Business Machines Corporation Methods for fabricating silicon carriers with conductive through-vias with low stress and low defect density
US20080164606A1 (en) * 2007-01-08 2008-07-10 Christoffer Graae Greisen Spacers for wafer bonding
US7670874B2 (en) 2007-02-16 2010-03-02 John Trezza Plated pillar package formation
US7850060B2 (en) * 2007-04-05 2010-12-14 John Trezza Heat cycle-able connection
US7748116B2 (en) * 2007-04-05 2010-07-06 John Trezza Mobile binding in an electronic connection
KR100909902B1 (en) * 2007-04-27 2009-07-30 삼성전자주식회사 Flash memory device and Flash memory system
US20080284037A1 (en) * 2007-05-15 2008-11-20 Andry Paul S Apparatus and Methods for Constructing Semiconductor Chip Packages with Silicon Space Transformer Carriers
US8367471B2 (en) 2007-06-15 2013-02-05 Micron Technology, Inc. Semiconductor assemblies, stacked semiconductor devices, and methods of manufacturing semiconductor assemblies and stacked semiconductor devices
JP2009055004A (en) * 2007-08-24 2009-03-12 Honda Motor Co Ltd Through-wiring structure
SG150410A1 (en) 2007-08-31 2009-03-30 Micron Technology Inc Partitioned through-layer via and associated systems and methods
EP2201600B1 (en) * 2007-10-15 2019-01-02 IMEC vzw Method for producing through-substrate vias
SG152101A1 (en) * 2007-11-06 2009-05-29 Agency Science Tech & Res An interconnect structure and a method of fabricating the same
US8125796B2 (en) * 2007-11-21 2012-02-28 Frampton E. Ellis Devices with faraday cages and internal flexibility sipes
US8164170B2 (en) 2007-11-21 2012-04-24 Frampton E. Ellis Devices with faraday cages and internal flexibility sipes
WO2009070276A1 (en) * 2007-11-26 2009-06-04 Ellis Frampton E Devices with faraday cages and internal flexibility sipes
US7884015B2 (en) 2007-12-06 2011-02-08 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US8084854B2 (en) * 2007-12-28 2011-12-27 Micron Technology, Inc. Pass-through 3D interconnect for microelectronic dies and associated systems and methods
US7477811B1 (en) * 2008-03-25 2009-01-13 International Business Machines Corporation Method of forming a three-dimensional stacked optical device
US7480426B1 (en) 2008-03-25 2009-01-20 International Business Machines Corporation Method of forming a three-dimensional stacked optical device
US20090243051A1 (en) * 2008-03-28 2009-10-01 Micron Technology, Inc. Integrated conductive shield for microelectronic device assemblies and associated methods
US20090243012A1 (en) * 2008-03-28 2009-10-01 Micron Technology, Inc. Electromagnetic interference shield structures for semiconductor components
US9324611B2 (en) * 2008-04-03 2016-04-26 Micron Technology, Inc. Corrosion resistant via connections in semiconductor substrates and methods of making same
US7821107B2 (en) * 2008-04-22 2010-10-26 Micron Technology, Inc. Die stacking with an annular via having a recessed socket
US8253230B2 (en) 2008-05-15 2012-08-28 Micron Technology, Inc. Disabling electrical connections using pass-through 3D interconnects and associated systems and methods
US8053873B2 (en) * 2008-06-06 2011-11-08 Texas Instruments Incorporated IC having voltage regulated integrated Faraday shield
US8048708B2 (en) * 2008-06-25 2011-11-01 Micron Technology, Inc. Method and apparatus providing an imager module with a permanent carrier
US20090321775A1 (en) * 2008-06-26 2009-12-31 Ghulam Hasnain LED with Reduced Electrode Area
US7800238B2 (en) * 2008-06-27 2010-09-21 Micron Technology, Inc. Surface depressions for die-to-die interconnects and associated systems and methods
US8138036B2 (en) 2008-08-08 2012-03-20 International Business Machines Corporation Through silicon via and method of fabricating same
IT1391239B1 (en) * 2008-08-08 2011-12-01 Milano Politecnico METHOD FOR BUMP FORMATION IN SUBSTRATES WITH THROUGH VIA
US7678696B2 (en) * 2008-08-08 2010-03-16 International Business Machines Corporation Method of making through wafer vias
US8384224B2 (en) 2008-08-08 2013-02-26 International Business Machines Corporation Through wafer vias and method of making same
US8035198B2 (en) * 2008-08-08 2011-10-11 International Business Machines Corporation Through wafer via and method of making same
US8299566B2 (en) 2008-08-08 2012-10-30 International Business Machines Corporation Through wafer vias and method of making same
US7943411B2 (en) * 2008-09-10 2011-05-17 Analog Devices, Inc. Apparatus and method of wafer bonding using compatible alloy
US8956904B2 (en) 2008-09-10 2015-02-17 Analog Devices, Inc. Apparatus and method of wafer bonding using compatible alloy
KR20100033012A (en) * 2008-09-19 2010-03-29 주식회사 하이닉스반도체 Semiconductor package and stacked semiconductor package having the same
KR20100048610A (en) * 2008-10-31 2010-05-11 삼성전자주식회사 Semiconductor fackage and forming method of the same
JP5308145B2 (en) 2008-12-19 2013-10-09 ルネサスエレクトロニクス株式会社 Semiconductor device
JP5389464B2 (en) * 2009-02-10 2014-01-15 フリースケール セミコンダクター インコーポレイテッド Manufacturing method of semiconductor device
US8531565B2 (en) * 2009-02-24 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Front side implanted guard ring structure for backside illuminated image sensor
US8361875B2 (en) * 2009-03-12 2013-01-29 International Business Machines Corporation Deep trench capacitor on backside of a semiconductor substrate
US8263492B2 (en) 2009-04-29 2012-09-11 International Business Machines Corporation Through substrate vias
US8174131B2 (en) * 2009-05-27 2012-05-08 Globalfoundries Inc. Semiconductor device having a filled trench structure and methods for fabricating the same
US8609466B2 (en) * 2009-07-15 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Cap and substrate electrical connection at wafer level
US8451014B2 (en) * 2009-09-09 2013-05-28 Advanced Micro Devices, Inc. Die stacking, testing and packaging for yield
US20110237079A1 (en) * 2009-09-30 2011-09-29 Dupont Air Products Nanomaterials Llc Method for exposing through-base wafer vias for fabrication of stacked devices
US8446007B2 (en) 2009-10-20 2013-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Non-uniform alignment of wafer bumps with substrate solders
US8242604B2 (en) * 2009-10-28 2012-08-14 International Business Machines Corporation Coaxial through-silicon via
US8492901B2 (en) * 2009-11-06 2013-07-23 International Business Machines Corporation Metal oxide semiconductor (MOS)-compatible high-aspect ratio through-wafer vias and low-stress configuration thereof
US20110112606A1 (en) * 2009-11-12 2011-05-12 Texas Instruments Incorporated Semiconductor System Integrated With Through Silicon Vias for Nerve Regeneration
TWI392069B (en) * 2009-11-24 2013-04-01 Advanced Semiconductor Eng Package structure and packaging process thereof
US9082762B2 (en) * 2009-12-28 2015-07-14 International Business Machines Corporation Electromigration-resistant under-bump metallization of nickel-iron alloys for Sn-rich solder bumps in Pb-free flip-clip
US8429735B2 (en) 2010-01-26 2013-04-23 Frampton E. Ellis Method of using one or more secure private networks to actively configure the hardware of a computer or microchip
US20110186989A1 (en) * 2010-02-04 2011-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Device and Bump Formation Process
US9678055B2 (en) 2010-02-08 2017-06-13 Genia Technologies, Inc. Methods for forming a nanopore in a lipid bilayer
US8193040B2 (en) * 2010-02-08 2012-06-05 Infineon Technologies Ag Manufacturing of a device including a semiconductor chip
US9605307B2 (en) 2010-02-08 2017-03-28 Genia Technologies, Inc. Systems and methods for forming a nanopore in a lipid bilayer
US8324914B2 (en) 2010-02-08 2012-12-04 Genia Technologies, Inc. Systems and methods for characterizing a molecule
US20110192723A1 (en) * 2010-02-08 2011-08-11 Genia Technologies, Inc. Systems and methods for manipulating a molecule in a nanopore
US8304863B2 (en) * 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
JP5609144B2 (en) * 2010-02-19 2014-10-22 ソニー株式会社 Semiconductor device and through electrode test method
US8551814B2 (en) * 2010-03-11 2013-10-08 Freescale Semiconductor, Inc. Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing
WO2011123398A1 (en) * 2010-03-30 2011-10-06 Lockheed Martin Corporation Methods for rework of a solder
US8148824B2 (en) * 2010-04-16 2012-04-03 Nanya Technology Corp. Semiconductor device with through substrate via
US9142533B2 (en) 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
US20110291287A1 (en) * 2010-05-25 2011-12-01 Xilinx, Inc. Through-silicon vias with low parasitic capacitance
US10115654B2 (en) * 2010-06-18 2018-10-30 Palo Alto Research Center Incorporated Buried thermally conductive layers for heat extraction and shielding
DE102010039330B4 (en) * 2010-08-13 2018-04-12 Robert Bosch Gmbh Method for producing an electrical via in a substrate
TWI446420B (en) 2010-08-27 2014-07-21 Advanced Semiconductor Eng Releasing carrier method for semiconductor process
TWI445152B (en) 2010-08-30 2014-07-11 Advanced Semiconductor Eng Semiconductor structure and method for manufacturing the same
US9007273B2 (en) 2010-09-09 2015-04-14 Advances Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US8314498B2 (en) * 2010-09-10 2012-11-20 Aptina Imaging Corporation Isolated bond pad with conductive via interconnect
US20120061789A1 (en) * 2010-09-13 2012-03-15 Omnivision Technologies, Inc. Image sensor with improved noise shielding
US8283785B2 (en) * 2010-09-20 2012-10-09 Micron Technology, Inc. Interconnect regions
TWI434387B (en) 2010-10-11 2014-04-11 Advanced Semiconductor Eng Semiconductor element having a via and package having a semiconductor element with a via and method for making the same
TWI527174B (en) 2010-11-19 2016-03-21 日月光半導體製造股份有限公司 Package having semiconductor device
US8845880B2 (en) 2010-12-22 2014-09-30 Genia Technologies, Inc. Nanopore-based single DNA molecule characterization, identification and isolation using speed bumps
TWI445155B (en) 2011-01-06 2014-07-11 Advanced Semiconductor Eng Stacked semiconductor package and method for making the same
US8853819B2 (en) 2011-01-07 2014-10-07 Advanced Semiconductor Engineering, Inc. Semiconductor structure with passive element network and manufacturing method thereof
US8962242B2 (en) 2011-01-24 2015-02-24 Genia Technologies, Inc. System for detecting electrical properties of a molecular complex
US9110478B2 (en) 2011-01-27 2015-08-18 Genia Technologies, Inc. Temperature regulation of measurement arrays
US8268677B1 (en) 2011-03-08 2012-09-18 Stats Chippac, Ltd. Semiconductor device and method of forming shielding layer over semiconductor die mounted to TSV interposer
US8519515B2 (en) * 2011-04-13 2013-08-27 United Microlectronics Corp. TSV structure and method for forming the same
CN102751172B (en) * 2011-04-22 2014-12-24 中芯国际集成电路制造(上海)有限公司 Integrated passive device and manufacture method thereof
KR101959284B1 (en) * 2011-11-18 2019-03-19 삼성전자주식회사 Semiconductor device and method of forming the same
US8541883B2 (en) 2011-11-29 2013-09-24 Advanced Semiconductor Engineering, Inc. Semiconductor device having shielded conductive vias
US8642423B2 (en) 2011-11-30 2014-02-04 International Business Machines Corporation Polysilicon/metal contact resistance in deep trench
US8975157B2 (en) 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
US8541849B2 (en) 2012-02-14 2013-09-24 Genia Technologies, Inc. Noise shielding techniques for ultra low current measurements in biochemical applications
US8963316B2 (en) 2012-02-15 2015-02-24 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US8986629B2 (en) 2012-02-27 2015-03-24 Genia Technologies, Inc. Sensor circuit for controlling, detecting, and measuring a molecular complex
US9646923B2 (en) 2012-04-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
US10090349B2 (en) 2012-08-09 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
US8629524B2 (en) * 2012-04-27 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for vertically integrated backside illuminated image sensors
US8957358B2 (en) 2012-04-27 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US8786060B2 (en) 2012-05-04 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US20130320522A1 (en) * 2012-05-30 2013-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Re-distribution Layer Via Structure and Method of Making Same
US8824145B2 (en) 2012-06-08 2014-09-02 Infineon Technologies Ag Electric device package and method of making an electric device package
DE102012210033B4 (en) * 2012-06-14 2023-02-02 Robert Bosch Gmbh Component with via and method of manufacture
EP2861768A4 (en) 2012-06-15 2016-03-02 Genia Technologies Inc Chip set-up and high-accuracy nucleic acid sequencing
US9324756B2 (en) 2012-07-25 2016-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. CIS chips and methods for forming the same
US9153542B2 (en) 2012-08-01 2015-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor package having an antenna and manufacturing method thereof
US9112007B2 (en) * 2012-09-14 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Through via structure and method
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same
US8937387B2 (en) 2012-11-07 2015-01-20 Advanced Semiconductor Engineering, Inc. Semiconductor device with conductive vias
US9605309B2 (en) 2012-11-09 2017-03-28 Genia Technologies, Inc. Nucleic acid sequencing using tags
US8952542B2 (en) 2012-11-14 2015-02-10 Advanced Semiconductor Engineering, Inc. Method for dicing a semiconductor wafer having through silicon vias and resultant structures
KR102190382B1 (en) 2012-12-20 2020-12-11 삼성전자주식회사 Semiconductor package
US9406552B2 (en) 2012-12-20 2016-08-02 Advanced Semiconductor Engineering, Inc. Semiconductor device having conductive via and manufacturing process
US8841751B2 (en) 2013-01-23 2014-09-23 Advanced Semiconductor Engineering, Inc. Through silicon vias for semiconductor devices and manufacturing method thereof
TW201432826A (en) * 2013-02-01 2014-08-16 Chipbond Technology Corp Semiconductor packaging process and structure thereof
US9759711B2 (en) 2013-02-05 2017-09-12 Genia Technologies, Inc. Nanopore arrays
US9978688B2 (en) 2013-02-28 2018-05-22 Advanced Semiconductor Engineering, Inc. Semiconductor package having a waveguide antenna and manufacturing method thereof
US9089268B2 (en) 2013-03-13 2015-07-28 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
US9173583B2 (en) 2013-03-15 2015-11-03 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
US8987734B2 (en) 2013-03-15 2015-03-24 Advanced Semiconductor Engineering, Inc. Semiconductor wafer, semiconductor process and semiconductor package
AU2014253672B2 (en) 2013-04-19 2019-05-30 Commonwealth Scientific And Industrial Research Organisation Checking undoability of an API-controlled computing system
US11221706B2 (en) 2013-09-27 2022-01-11 Sensel, Inc. Tactile touch sensor system and method
KR102242768B1 (en) 2013-09-27 2021-04-22 센셀, 인크. Touch sensor detector system and method
US9551697B2 (en) 2013-10-17 2017-01-24 Genia Technologies, Inc. Non-faradaic, capacitively coupled measurement in a nanopore cell array
US9322062B2 (en) 2013-10-23 2016-04-26 Genia Technologies, Inc. Process for biosensor well formation
EP3640349A3 (en) 2013-10-23 2020-07-29 Roche Sequencing Solutions, Inc. High speed molecular sensing with nanopores
US9197277B2 (en) * 2014-01-13 2015-11-24 Tyco Fire & Security Gmbh Two-way wireless communication enabled intrusion detector assemblies
US9252047B2 (en) 2014-01-23 2016-02-02 Taiwan Semiconductor Manufacturing Co., Ltd Interconnect arrangement with stress-reducing structure and method of fabricating the same
KR102186203B1 (en) * 2014-01-23 2020-12-04 삼성전자주식회사 Package-on-package device including the same
JP5765546B2 (en) * 2014-03-07 2015-08-19 セイコーエプソン株式会社 Semiconductor device, circuit board, and electronic equipment
US20150262902A1 (en) 2014-03-12 2015-09-17 Invensas Corporation Integrated circuits protected by substrates with cavities, and methods of manufacture
US9355997B2 (en) 2014-03-12 2016-05-31 Invensas Corporation Integrated circuit assemblies with reinforcement frames, and methods of manufacture
US9165793B1 (en) 2014-05-02 2015-10-20 Invensas Corporation Making electrical components in handle wafers of integrated circuit packages
US9123738B1 (en) 2014-05-16 2015-09-01 Xilinx, Inc. Transmission line via structure
US9741649B2 (en) 2014-06-04 2017-08-22 Invensas Corporation Integrated interposer solutions for 2D and 3D IC packaging
KR102307640B1 (en) * 2014-06-25 2021-10-05 센셀, 인크. Tactile touch sensor system and method
US9252127B1 (en) 2014-07-10 2016-02-02 Invensas Corporation Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture
US9887123B2 (en) 2014-10-24 2018-02-06 Newport Fab, Llc Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
CN104409364B (en) * 2014-11-19 2017-12-01 清华大学 Pinboard and preparation method thereof, encapsulating structure and the bonding method for pinboard
US9478504B1 (en) 2015-06-19 2016-10-25 Invensas Corporation Microelectronic assemblies with cavities, and methods of fabrication
US10315915B2 (en) * 2015-07-02 2019-06-11 Kionix, Inc. Electronic systems with through-substrate interconnects and MEMS device
JP6517629B2 (en) * 2015-08-20 2019-05-22 株式会社東芝 Flat antenna device
US9691723B2 (en) * 2015-10-30 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Connector formation methods and packaged semiconductor devices
TWI697058B (en) 2016-03-30 2020-06-21 胡志良 Process for packaging circuit component having copper circuits with solid electrical and thermal conductivities and circuit component thereof
US10361140B2 (en) 2016-06-10 2019-07-23 International Business Machines Corporation Wafer stacking for integrated circuit manufacturing
CN106449544A (en) * 2016-08-31 2017-02-22 华天科技（西安）有限公司 Naked-core plastic package ultrathin fingerprint recognition system-level package element capable of grooving first and then punching
CN106252305A (en) * 2016-08-31 2016-12-21 华天科技（西安）有限公司 The naked core plastic packaging ultra-thin fingerprint recognition system level packaging part that a kind of first cutting is punched again
US10267988B2 (en) * 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photonic package and method forming same
US10192843B1 (en) 2017-07-26 2019-01-29 Micron Technology, Inc. Methods of making semiconductor device modules with increased yield
US11355421B2 (en) 2017-11-14 2022-06-07 Sony Semiconductor Solutions Corporation Semiconductor device, manufacturing method for semiconductor, and imaging unit
DE102017223517A1 (en) * 2017-12-21 2019-06-27 Robert Bosch Gmbh Semiconductor device with a breakthrough for optical control
US10790236B2 (en) * 2018-04-05 2020-09-29 Shinko Electric Industries Co., Ltd. Wiring substrate and electronic device
US10957537B2 (en) * 2018-11-12 2021-03-23 Hrl Laboratories, Llc Methods to design and uniformly co-fabricate small vias and large cavities through a substrate
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
KR102634784B1 (en) * 2019-04-26 2024-02-07 주식회사 아모센스 Semiconductor Package Assembly having Thermal Blocking member and Electronic Equipment having the Same
IT201900006740A1 (en) 2019-05-10 2020-11-10 Applied Materials Inc SUBSTRATE STRUCTURING PROCEDURES
IT201900006736A1 (en) 2019-05-10 2020-11-10 Applied Materials Inc PACKAGE MANUFACTURING PROCEDURES
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US10896848B1 (en) * 2019-10-15 2021-01-19 Nanya Technology Corporation Method of manufacturing a semiconductor device
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
JP7341927B2 (en) 2020-03-12 2023-09-11 キオクシア株式会社 semiconductor storage device
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
JP2021197519A (en) 2020-06-17 2021-12-27 東北マイクロテック株式会社 Laminated semiconductor device and mounting component, substrate, and bump connector used for laminated semiconductor device
CN111883541A (en) * 2020-06-30 2020-11-03 复旦大学 SOI active adapter plate for three-dimensional packaging and preparation method thereof
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
GB202019694D0 (en) * 2020-12-14 2021-01-27 Ams Sensors Singapore Pte Ltd Illumination system
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US20230067714A1 (en) * 2021-08-26 2023-03-02 Taiwan Semiconductor Manufacturing Company Limited Three-dimensional device structure including seal ring connection circuit
CN115050654B (en) * 2022-08-17 2022-11-08 甬矽电子(宁波)股份有限公司 Preparation method of fan-in type packaging structure and fan-in type packaging structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0757386A2 (en) * 1995-08-02 1997-02-05 International Business Machines Corporation Systems interconnected by bumps of joining material
US20020027441A1 (en) * 1996-04-01 2002-03-07 Salman Akram Semiconductor test interconnect with variable flexure contacts
US20030080408A1 (en) * 1997-12-18 2003-05-01 Farnworth Warren M. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
US20030206680A1 (en) * 2002-05-03 2003-11-06 Georgia Tech Research Corporation Devices having compliant wafer-level input/output interconnections and packages using pillars and methods of fabrication thereof
US20040124523A1 (en) * 2002-06-18 2004-07-01 Poo Chia Yong Semiconductor devices including peripherally located bond pads, intermediates thereof, assemblies, and packages including the semiconductor devices, and support elements for the semiconductor devices

Family Cites Families (335)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US670983A (en) * 1900-11-17 1901-04-02 Charles S Corson Locking and releasing means for vehicle-brakes.
US903443A (en) 1905-05-18 1908-11-10 Smith Premier Typewriter Company Type-writing machine.
US3312878A (en) 1965-06-01 1967-04-04 Ibm High speed packaging of miniaturized circuit modules
US3591839A (en) 1969-08-27 1971-07-06 Siliconix Inc Micro-electronic circuit with novel hermetic sealing structure and method of manufacture
US3720309A (en) * 1971-12-07 1973-03-13 Teledyne Inc Method and apparatus for sorting semiconductor dice
US4200272A (en) * 1978-06-12 1980-04-29 Bcira Holder for irregularly shaped articles
NL8006194A (en) * 1980-11-13 1982-06-01 Philips Nv DEVICE FOR SIMULTANEOUS PLACEMENT OF MULTIPLE ELECTRICAL AND / OR ELECTRONIC COMPONENTS ON A PRINTED WIRING PANEL.
US4893174A (en) * 1985-07-08 1990-01-09 Hitachi, Ltd. High density integration of semiconductor circuit
US4878611A (en) 1986-05-30 1989-11-07 American Telephone And Telegraph Company, At&T Bell Laboratories Process for controlling solder joint geometry when surface mounting a leadless integrated circuit package on a substrate
US5134460A (en) 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
JPH07112041B2 (en) * 1986-12-03 1995-11-29 シャープ株式会社 Method for manufacturing semiconductor device
JPS63258060A (en) 1987-04-15 1988-10-25 Nec Corp Semiconductor memory divice
US5014111A (en) * 1987-12-08 1991-05-07 Matsushita Electric Industrial Co., Ltd. Electrical contact bump and a package provided with the same
US4873205A (en) 1987-12-21 1989-10-10 International Business Machines Corporation Method for providing silicide bridge contact between silicon regions separated by a thin dielectric
US4915494A (en) * 1988-07-06 1990-04-10 Harris Corporation Carbon-carbon mirror for space applications
US4930001A (en) 1989-03-23 1990-05-29 Hughes Aircraft Company Alloy bonded indium bumps and methods of processing same
JP2786700B2 (en) * 1989-11-29 1998-08-13 株式会社日立製作所 Method and apparatus for manufacturing semiconductor integrated circuit device
US5090609A (en) * 1989-04-28 1992-02-25 Hitachi, Ltd. Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
US5089880A (en) 1989-06-07 1992-02-18 Amdahl Corporation Pressurized interconnection system for semiconductor chips
US5179043A (en) * 1989-07-14 1993-01-12 The Texas A&M University System Vapor deposited micro heat pipes
US5399898A (en) * 1992-07-17 1995-03-21 Lsi Logic Corporation Multi-chip semiconductor arrangements using flip chip dies
US4999077A (en) * 1989-08-31 1991-03-12 Xerox Corporation Method of fabricating full width scanning or imaging arrays from subunits
US5236854A (en) 1989-12-11 1993-08-17 Yukio Higaki Compound semiconductor device and method for fabrication thereof
US5089055A (en) * 1989-12-12 1992-02-18 Takashi Nakamura Survivable solar power-generating systems for use with spacecraft
US6471115B1 (en) * 1990-02-19 2002-10-29 Hitachi, Ltd. Process for manufacturing electronic circuit devices
JPH0831617B2 (en) * 1990-04-18 1996-03-27 三菱電機株式会社 Solar cell and manufacturing method thereof
JP2918307B2 (en) * 1990-08-07 1999-07-12 沖電気工業株式会社 Semiconductor storage element
US5166097A (en) * 1990-11-26 1992-11-24 The Boeing Company Silicon wafers containing conductive feedthroughs
JPH0817880B2 (en) * 1990-11-28 1996-02-28 帝人株式会社 Press cushion material
KR940006696B1 (en) 1991-01-16 1994-07-25 금성일렉트론 주식회사 Manufacturing method of isolation layer of semiconductor device
EP0516866A1 (en) 1991-05-03 1992-12-09 International Business Machines Corporation Modular multilayer interwiring structure
US5308784A (en) * 1991-10-02 1994-05-03 Samsung Electronics Co., Ltd. Semiconductor device and method for making the same
US5427834A (en) * 1991-10-31 1995-06-27 Idm Enterprises Waterproof textile
US5266912A (en) 1992-08-19 1993-11-30 Micron Technology, Inc. Inherently impedance matched multiple integrated circuit module
US5234149A (en) 1992-08-28 1993-08-10 At&T Bell Laboratories Debondable metallic bonding method
US5334804A (en) 1992-11-17 1994-08-02 Fujitsu Limited Wire interconnect structures for connecting an integrated circuit to a substrate
US5603847A (en) * 1993-04-07 1997-02-18 Zycon Corporation Annular circuit components coupled with printed circuit board through-hole
US5600103A (en) 1993-04-16 1997-02-04 Kabushiki Kaisha Toshiba Circuit devices and fabrication method of the same
JP2541102B2 (en) * 1993-06-23 1996-10-09 日本電気株式会社 Method of forming coaxial flip chip connection structure
GB9400384D0 (en) 1994-01-11 1994-03-09 Inmos Ltd Circuit connection in an electrical assembly
US5470787A (en) 1994-05-02 1995-11-28 Motorola, Inc. Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same
JPH0837395A (en) 1994-07-21 1996-02-06 Matsushita Electric Ind Co Ltd Device and method for supplying semiconductor chip
US5523628A (en) * 1994-08-05 1996-06-04 Hughes Aircraft Company Apparatus and method for protecting metal bumped integrated circuit chips during processing and for providing mechanical support to interconnected chips
US6093615A (en) * 1994-08-15 2000-07-25 Micron Technology, Inc. Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug
US5587119A (en) 1994-09-14 1996-12-24 E-Systems, Inc. Method for manufacturing a coaxial interconnect
DE4433845A1 (en) 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Method of manufacturing a three-dimensional integrated circuit
JP2581017B2 (en) 1994-09-30 1997-02-12 日本電気株式会社 Semiconductor device and manufacturing method thereof
US5468655A (en) 1994-10-31 1995-11-21 Motorola, Inc. Method for forming a temporary attachment between a semiconductor die and a substrate using a metal paste comprising spherical modules
US5598965A (en) 1994-11-03 1997-02-04 Scheu; William E. Integrated circuit, electronic component chip removal and replacement system
US5707902A (en) 1995-02-13 1998-01-13 Industrial Technology Research Institute Composite bump structure and methods of fabrication
DE19514545A1 (en) * 1995-04-20 1996-10-24 Daimler Benz Ag Micro-cooling device for multiple microelectronic components
US5608264A (en) * 1995-06-05 1997-03-04 Harris Corporation Surface mountable integrated circuit with conductive vias
US5814889A (en) 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US5796591A (en) 1995-06-07 1998-08-18 International Business Machines Corporation Direct chip attach circuit card
US5635014A (en) 1995-06-19 1997-06-03 Gr Systems Press apparatus and methods for fusing overlapped thermoplastic sheet materials
US5874780A (en) 1995-07-27 1999-02-23 Nec Corporation Method of mounting a semiconductor device to a substrate and a mounted structure
JP3498877B2 (en) * 1995-12-05 2004-02-23 株式会社東芝 Semiconductor manufacturing apparatus and semiconductor device manufacturing method
JP2739855B2 (en) * 1995-12-14 1998-04-15 日本電気株式会社 Semiconductor device and manufacturing method thereof
US5973396A (en) 1996-02-16 1999-10-26 Micron Technology, Inc. Surface mount IC using silicon vias in an area array format or same size as die array
US5760479A (en) 1996-02-29 1998-06-02 Texas Instruments Incorporated Flip-chip die attachment for a high temperature die to substrate bond
US5727834A (en) * 1996-03-22 1998-03-17 Weselowski; James Safety attachment for a lifting hook
US5872338A (en) * 1996-04-10 1999-02-16 Prolinx Labs Corporation Multilayer board having insulating isolation rings
US5912510A (en) 1996-05-29 1999-06-15 Motorola, Inc. Bonding structure for an electronic device
US5793116A (en) 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
JP2790122B2 (en) 1996-05-31 1998-08-27 日本電気株式会社 Laminated circuit board
JP3610999B2 (en) * 1996-06-07 2005-01-19 松下電器産業株式会社 Mounting method of semiconductor element
GB2316225A (en) 1996-08-06 1998-02-18 Northern Telecom Ltd Semiconductor photodetector packaging
US5916453A (en) * 1996-09-20 1999-06-29 Fujitsu Limited Methods of planarizing structures on wafers and substrates by polishing
US7052941B2 (en) 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
JP2877108B2 (en) 1996-12-04 1999-03-31 日本電気株式会社 Semiconductor device and manufacturing method thereof
JP3065549B2 (en) 1997-01-09 2000-07-17 富士通株式会社 Semiconductor chip component mounting method
US6333522B1 (en) 1997-01-31 2001-12-25 Matsushita Electric Industrial Co., Ltd. Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor
JP3176307B2 (en) * 1997-03-03 2001-06-18 日本電気株式会社 Mounting structure of integrated circuit device and method of manufacturing the same
US5846464A (en) 1997-03-28 1998-12-08 Mcdonnell Douglas Corporation Method for forming composite parts using reconfigurable modular tooling
JP3234188B2 (en) 1997-03-31 2001-12-04 キヤノン株式会社 Image forming apparatus and manufacturing method thereof
JP3920399B2 (en) 1997-04-25 2007-05-30 株式会社東芝 Multi-chip semiconductor device chip alignment method, and multi-chip semiconductor device manufacturing method and manufacturing apparatus
JPH10303252A (en) 1997-04-28 1998-11-13 Nec Kansai Ltd Semiconductor device
JPH10335383A (en) * 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd Producing method for semiconductor device
US6133631A (en) 1997-05-30 2000-10-17 Hewlett-Packard Company Semiconductor package lid with internal heat pipe
US6335571B1 (en) * 1997-07-21 2002-01-01 Miguel Albert Capote Semiconductor flip-chip package and method for the fabrication thereof
US6135054A (en) 1997-09-10 2000-10-24 Nippon Pillar Packing Co. Ltd. Semiconductor wafer holder with CVD silicon carbide film coating
JPH11166935A (en) * 1997-09-25 1999-06-22 Canon Inc Light probe for light detection or irradiation, near-field optical microscope provided with the probe, manufacture of the light probe and substrate used for its manufacture
CN100510975C (en) 1997-10-31 2009-07-08 三洋化成工业株式会社 Toner and toner binder
US6075710A (en) * 1998-02-11 2000-06-13 Express Packaging Systems, Inc. Low-cost surface-mount compatible land-grid array (LGA) chip scale package (CSP) for packaging solder-bumped flip chips
US6110760A (en) * 1998-02-12 2000-08-29 Micron Technology, Inc. Methods of forming electrically conductive interconnections and electrically interconnected substrates
JP3102405B2 (en) 1998-02-13 2000-10-23 日本電気株式会社 Method for manufacturing semiconductor device
US5962922A (en) 1998-03-18 1999-10-05 Wang; Bily Cavity grid array integrated circuit package
US6222276B1 (en) * 1998-04-07 2001-04-24 International Business Machines Corporation Through-chip conductors for low inductance chip-to-chip integration and off-chip connections
US6133615A (en) * 1998-04-13 2000-10-17 Wisconsin Alumni Research Foundation Photodiode arrays having minimized cross-talk between diodes
EP0951068A1 (en) * 1998-04-17 1999-10-20 Interuniversitair Micro-Elektronica Centrum Vzw Method of fabrication of a microstructure having an inside cavity
SG75958A1 (en) * 1998-06-01 2000-10-24 Hitachi Ulsi Sys Co Ltd Semiconductor device and a method of producing semiconductor device
US6882824B2 (en) * 1998-06-10 2005-04-19 Leapfrog Enterprises, Inc. Interactive teaching toy
US5943597A (en) * 1998-06-15 1999-08-24 Motorola, Inc. Bumped semiconductor device having a trench for stress relief
US6399426B1 (en) * 1998-07-21 2002-06-04 Miguel Albert Capote Semiconductor flip-chip package and method for the fabrication thereof
US7107666B2 (en) 1998-07-23 2006-09-19 Bh Electronics Method of manufacturing an ultra-miniature magnetic device
US6118181A (en) 1998-07-29 2000-09-12 Agilent Technologies, Inc. System and method for bonding wafers
US6316786B1 (en) 1998-08-29 2001-11-13 International Business Machines Corporation Organic opto-electronic devices
US6380023B2 (en) 1998-09-02 2002-04-30 Micron Technology, Inc. Methods of forming contacts, methods of contacting lines, methods of operating integrated circuitry, and integrated circuits
US6121576A (en) 1998-09-02 2000-09-19 Micron Technology, Inc. Method and process of contact to a heat softened solder ball array
DE69939128D1 (en) 1998-09-30 2008-08-28 Ibiden Co Ltd SEMICONDUCTOR CHIP WITH HEADLESS ELECTRODES
JP2000114206A (en) 1998-10-05 2000-04-21 Sony Corp Manufacture of semiconductor package
US6504241B1 (en) * 1998-10-15 2003-01-07 Sony Corporation Stackable semiconductor device and method for manufacturing the same
US6122187A (en) 1998-11-23 2000-09-19 Micron Technology, Inc. Stacked integrated circuits
JP4590052B2 (en) * 1998-12-04 2010-12-01 キヤノン株式会社 Solar cell roof structure, solar power generation device and building
JP3847494B2 (en) 1998-12-14 2006-11-22 シャープ株式会社 Manufacturing method of two-dimensional image detector
US7405149B1 (en) 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US6331450B1 (en) 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
JP2000223653A (en) 1999-02-02 2000-08-11 Rohm Co Ltd Semiconductor device having chip-on-chip structure and semiconductor chip using the same
US6410415B1 (en) * 1999-03-23 2002-06-25 Polymer Flip Chip Corporation Flip chip mounting technique
US6207475B1 (en) * 1999-03-30 2001-03-27 Industrial Technology Research Institute Method for dispensing underfill and devices formed
US6393638B1 (en) * 1999-04-20 2002-05-28 Maccoll Ian Coats Waterproof blanket with integrated storage bag
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6225206B1 (en) 1999-05-10 2001-05-01 International Business Machines Corporation Flip chip C4 extension structure and process
JP2000323510A (en) 1999-05-11 2000-11-24 Shinko Electric Ind Co Ltd Semiconductor wafer having columnar electrodes, manufacture of the same, and semiconductor device
JP2000323645A (en) 1999-05-11 2000-11-24 Shinko Electric Ind Co Ltd Semiconductor device and manufacture thereof
JP2000349101A (en) * 1999-06-07 2000-12-15 Lintec Corp Transfer tape and use method thereof
TW459275B (en) 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
US6228675B1 (en) * 1999-07-23 2001-05-08 Agilent Technologies, Inc. Microcap wafer-level package with vias
US6271599B1 (en) * 1999-08-03 2001-08-07 International Business Machines Corporation Wire interconnect structure for electrically and mechanically connecting an integrated circuit chip to a substrate
JP3518434B2 (en) * 1999-08-11 2004-04-12 株式会社日立製作所 Multi-chip module cooling system
US6316737B1 (en) 1999-09-09 2001-11-13 Vlt Corporation Making a connection between a component and a circuit board
JP3973340B2 (en) * 1999-10-05 2007-09-12 Ｎｅｃエレクトロニクス株式会社 Semiconductor device, wiring board, and manufacturing method thereof
US6135635A (en) 1999-10-07 2000-10-24 Miller; Jeffrey Convertible bag and barrier device
JP2001129800A (en) 1999-11-04 2001-05-15 Japan Science & Technology Corp Substrate with field-through and manufacturing method therefor
US6283693B1 (en) 1999-11-12 2001-09-04 General Semiconductor, Inc. Method and apparatus for semiconductor chip handling
JP3971568B2 (en) 1999-11-29 2007-09-05 松下電器産業株式会社 Semiconductor package and semiconductor package manufacturing method
US6348728B1 (en) 2000-01-28 2002-02-19 Fujitsu Limited Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer
US6756594B2 (en) * 2000-01-28 2004-06-29 California Institute Of Technology Micromachined tuned-band hot bolometer emitter
JP3386029B2 (en) * 2000-02-09 2003-03-10 日本電気株式会社 Flip chip type semiconductor device and manufacturing method thereof
US6513236B2 (en) * 2000-02-18 2003-02-04 Matsushita Electric Industrial Co., Ltd. Method of manufacturing bump-component mounted body and device for manufacturing the same
JP3394947B2 (en) 2000-02-24 2003-04-07 日東電工株式会社 Adhesive tape and adhesive tape substrate
JP3979791B2 (en) * 2000-03-08 2007-09-19 株式会社ルネサステクノロジ Semiconductor device and manufacturing method thereof
EP1278612B1 (en) * 2000-03-10 2010-02-24 Chippac, Inc. Flip chip Interconnection structure and method of obtaining the same
US6446317B1 (en) 2000-03-31 2002-09-10 Intel Corporation Hybrid capacitor and method of fabrication therefor
US6484776B1 (en) 2000-04-07 2002-11-26 Northrop Grumman Corporation System for constructing a laminate
JP3968554B2 (en) 2000-05-01 2007-08-29 セイコーエプソン株式会社 Bump forming method and semiconductor device manufacturing method
US6707140B1 (en) * 2000-05-09 2004-03-16 National Semiconductor Corporation Arrayable, scaleable, and stackable molded package configuration
US6909180B2 (en) 2000-05-12 2005-06-21 Matsushita Electric Industrial Co., Ltd. Semiconductor device, mounting circuit board, method of producing the same, and method of producing mounting structure using the same
JP3455948B2 (en) 2000-05-19 2003-10-14 カシオ計算機株式会社 Semiconductor device and manufacturing method thereof
JP2001338947A (en) 2000-05-26 2001-12-07 Nec Corp Flip chip type semiconductor device and its manufacturing method
KR100398716B1 (en) 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 Semiconductor module and circuit substrate
JP2002289768A (en) 2000-07-17 2002-10-04 Rohm Co Ltd Semiconductor device and its manufacturing method
JP3906653B2 (en) 2000-07-18 2007-04-18 ソニー株式会社 Image display device and manufacturing method thereof
JP2002043502A (en) * 2000-07-25 2002-02-08 Toshiba Corp Multichip semiconductor device, and chip for multichip semiconductor device and its manufacturing method
US6938783B2 (en) 2000-07-26 2005-09-06 Amerasia International Technology, Inc. Carrier tape
JP2002050721A (en) 2000-08-03 2002-02-15 Hitachi Cable Ltd Electronic device and manufacturing method thereof
JP3951091B2 (en) * 2000-08-04 2007-08-01 セイコーエプソン株式会社 Manufacturing method of semiconductor device
TW525417B (en) 2000-08-11 2003-03-21 Ind Tech Res Inst Composite through hole structure
US7271491B1 (en) 2000-08-31 2007-09-18 Micron Technology, Inc. Carrier for wafer-scale package and wafer-scale package including the carrier
US6577013B1 (en) * 2000-09-05 2003-06-10 Amkor Technology, Inc. Chip size semiconductor packages with stacked dies
US6627477B1 (en) 2000-09-07 2003-09-30 International Business Machines Corporation Method of assembling a plurality of semiconductor devices having different thickness
US6720245B2 (en) 2000-09-07 2004-04-13 Interuniversitair Microelektronica Centrum (Imec) Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme
JP3723453B2 (en) 2000-09-12 2005-12-07 ローム株式会社 Semiconductor device
US6740576B1 (en) * 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
US7262082B1 (en) 2000-10-13 2007-08-28 Bridge Semiconductor Corporation Method of making a three-dimensional stacked semiconductor package with a metal pillar and a conductive interconnect in an encapsulant aperture
JP2002134545A (en) * 2000-10-26 2002-05-10 Oki Electric Ind Co Ltd Semiconductor integrated circuit chip, board and their manufacturing method
JP4608763B2 (en) * 2000-11-09 2011-01-12 日本電気株式会社 Semiconductor device
US6858941B2 (en) * 2000-12-07 2005-02-22 International Business Machines Corporation Multi-chip stack and method of fabrication utilizing self-aligning electrical contact array
EP1217656A1 (en) 2000-12-20 2002-06-26 STMicroelectronics S.r.l. Process for manufacturing components in a semiconductor material with reduction in the starting wafer thickness
JP3683179B2 (en) * 2000-12-26 2005-08-17 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
JP3832334B2 (en) 2000-12-28 2006-10-11 松下電工株式会社 Semiconductor chip mounting substrate and manufacturing method thereof
EP1356318A4 (en) * 2000-12-29 2005-03-30 Night Vision Corp Image enhancement system and method for night vision goggles
US6557192B2 (en) * 2001-01-02 2003-05-06 Patent Category Corp. Sleeping bag with enhancements
US6277711B1 (en) 2001-01-08 2001-08-21 Jiahn-Chang Wu Semiconductor matrix formation
US6512300B2 (en) * 2001-01-10 2003-01-28 Raytheon Company Water level interconnection
JP4656275B2 (en) * 2001-01-15 2011-03-23 日本電気株式会社 Manufacturing method of semiconductor device
JP3565334B2 (en) * 2001-01-25 2004-09-15 シャープ株式会社 Semiconductor device, liquid crystal module using the same, and method of manufacturing semiconductor device
US6543674B2 (en) 2001-02-06 2003-04-08 Fujitsu Limited Multilayer interconnection and method
US6429045B1 (en) 2001-02-07 2002-08-06 International Business Machines Corporation Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage
KR100364635B1 (en) 2001-02-09 2002-12-16 삼성전자 주식회사 Chip-Level Three-Dimensional Multi-Chip Package Having Chip Selection Pad Formed On Chip-Level And Making Method Therefor
US7233028B2 (en) 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US7242099B2 (en) 2001-03-05 2007-07-10 Megica Corporation Chip package with multiple chips connected by bumps
JP4118029B2 (en) 2001-03-09 2008-07-16 富士通株式会社 Semiconductor integrated circuit device and manufacturing method thereof
JP3700598B2 (en) 2001-03-21 2005-09-28 セイコーエプソン株式会社 Semiconductor chip, semiconductor device, circuit board, and electronic equipment
JP2002289900A (en) * 2001-03-23 2002-10-04 Canon Inc Concentrating solar cell module and concentrating photovoltaic power generation system
JP2002289770A (en) 2001-03-27 2002-10-04 Nec Kansai Ltd Semiconductor device
US6537780B2 (en) * 2001-03-28 2003-03-25 Applera Corporation Isolated nucleic acid molecules encoding transferase enzymes
US6872635B2 (en) * 2001-04-11 2005-03-29 Sony Corporation Device transferring method, and device arraying method and image display unit fabricating method using the same
TW561805B (en) 2001-05-16 2003-11-11 Unimicron Technology Corp Fabrication method of micro-via
JP2002359386A (en) * 2001-05-31 2002-12-13 Canon Inc Solar battery string, solar battery array, and solar power generation system
US6413851B1 (en) 2001-06-12 2002-07-02 Advanced Interconnect Technology, Ltd. Method of fabrication of barrier cap for under bump metal
FR2826153B1 (en) 2001-06-14 2004-05-28 A S K METHOD FOR CONNECTING A CHIP TO AN ANTENNA OF A RADIO FREQUENCY IDENTIFICATION DEVICE OF THE CONTACTLESS CHIP CARD TYPE
US6765287B1 (en) 2001-07-27 2004-07-20 Charles W. C. Lin Three-dimensional stacked semiconductor package
US6451626B1 (en) 2001-07-27 2002-09-17 Charles W.C. Lin Three-dimensional stacked semiconductor package
US7218349B2 (en) 2001-08-09 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6635960B2 (en) 2001-08-30 2003-10-21 Micron Technology, Inc. Angled edge connections for multichip structures
US6747347B2 (en) 2001-08-30 2004-06-08 Micron Technology, Inc. Multi-chip electronic package and cooling system
US6686654B2 (en) 2001-08-31 2004-02-03 Micron Technology, Inc. Multiple chip stack structure and cooling system
US6881609B2 (en) * 2001-09-07 2005-04-19 Peter C. Salmon Component connections using bumps and wells
EP1434261B1 (en) 2001-09-12 2010-03-31 Nikkiso Co., Ltd. Circuit device mounting method and press
DE20115945U1 (en) 2001-09-27 2001-12-13 Heimbach Gmbh Thomas Josef Press pad
JP4917225B2 (en) * 2001-09-28 2012-04-18 ローム株式会社 Semiconductor device
US6750516B2 (en) 2001-10-18 2004-06-15 Hewlett-Packard Development Company, L.P. Systems and methods for electrically isolating portions of wafers
US6717045B2 (en) * 2001-10-23 2004-04-06 Leon L. C. Chen Photovoltaic array module design for solar electric power generation systems
JP3976541B2 (en) 2001-10-23 2007-09-19 富士通株式会社 Semiconductor chip peeling method and apparatus
ITTO20011038A1 (en) * 2001-10-30 2003-04-30 St Microelectronics Srl PROCEDURE FOR THE MANUFACTURE OF AN INTEGRATED SEMICONDUCTIVE SLICE FOR ELECTRONIC DEVICES AND A STRUCTURE FOR THE DECOUPLING AND
US6768210B2 (en) 2001-11-01 2004-07-27 Texas Instruments Incorporated Bumpless wafer scale device and board assembly
JP3495727B2 (en) 2001-11-07 2004-02-09 新光電気工業株式会社 Semiconductor package and manufacturing method thereof
JP3875077B2 (en) * 2001-11-16 2007-01-31 富士通株式会社 Electronic device and device connection method
US6617507B2 (en) 2001-11-16 2003-09-09 First Solar, Llc Photovoltaic array
US6599778B2 (en) 2001-12-19 2003-07-29 International Business Machines Corporation Chip and wafer integration process using vertical connections
US20030132528A1 (en) * 2001-12-28 2003-07-17 Jimmy Liang Method and apparatus for flip chip device assembly by radiant heating
US6667528B2 (en) * 2002-01-03 2003-12-23 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US6674647B2 (en) * 2002-01-07 2004-01-06 International Business Machines Corporation Low or no-force bump flattening structure and method
US6590278B1 (en) 2002-01-08 2003-07-08 International Business Machines Corporation Electronic package
KR100415282B1 (en) 2002-02-06 2004-01-16 삼성전자주식회사 Dual die bonder for semiconductor devices
US6635970B2 (en) 2002-02-06 2003-10-21 International Business Machines Corporation Power distribution design method for stacked flip-chip packages
JP3829325B2 (en) 2002-02-07 2006-10-04 日本電気株式会社 Semiconductor element, manufacturing method thereof, and manufacturing method of semiconductor device
US6606251B1 (en) 2002-02-07 2003-08-12 Cooligy Inc. Power conditioning module
US6889427B2 (en) * 2002-02-15 2005-05-10 Freescale Semiconductor, Inc. Process for disengaging semiconductor die from an adhesive film
US6770822B2 (en) 2002-02-22 2004-08-03 Bridgewave Communications, Inc. High frequency device packages and methods
US7098072B2 (en) * 2002-03-01 2006-08-29 Agng, Llc Fluxless assembly of chip size semiconductor packages
SG115459A1 (en) * 2002-03-04 2005-10-28 Micron Technology Inc Flip chip packaging using recessed interposer terminals
AU2003218085A1 (en) * 2002-03-12 2003-09-29 Fairchild Semiconductor Corporation Wafer-level coated copper stud bumps
US6660548B2 (en) * 2002-03-27 2003-12-09 Intel Corporation Packaging of multiple active optical devices
US6998293B2 (en) * 2002-03-29 2006-02-14 Visteon Global Technologies, Inc. Flip-chip bonding method
KR100446316B1 (en) * 2002-03-30 2004-09-01 주식회사 하이닉스반도체 Method for forming a contact plug in semiconductor device
JP3717899B2 (en) 2002-04-01 2005-11-16 Ｎｅｃエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
EP2560199B1 (en) * 2002-04-05 2016-08-03 STMicroelectronics S.r.l. Process for manufacturing a through insulated interconnection in a body of semiconductor material
US6583517B1 (en) 2002-04-09 2003-06-24 International Business Machines Corporation Method and structure for joining two substrates with a low melt solder joint
US6642081B1 (en) 2002-04-11 2003-11-04 Robert Patti Interlocking conductor method for bonding wafers to produce stacked integrated circuits
US6939789B2 (en) 2002-05-13 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of wafer level chip scale packaging
US6930032B2 (en) * 2002-05-14 2005-08-16 Freescale Semiconductor, Inc. Under bump metallurgy structural design for high reliability bumped packages
US6689949B2 (en) * 2002-05-17 2004-02-10 United Innovations, Inc. Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies
KR100449948B1 (en) 2002-05-18 2004-09-30 주식회사 하이닉스반도체 Method for fabricating contact plug with low contact resistance
JP3527229B2 (en) 2002-05-20 2004-05-17 沖電気工業株式会社 Semiconductor device, method of mounting semiconductor device, and method of repairing semiconductor device
EP1369929B1 (en) * 2002-05-27 2016-08-03 STMicroelectronics Srl A process for manufacturing encapsulated optical sensors, and an encapsulated optical sensor manufactured using this process
US6704953B2 (en) 2002-06-05 2004-03-16 Zelma Lee Fishman Combination sleeping bag and mat for infants and children
US6596640B1 (en) 2002-06-21 2003-07-22 Intel Corporation Method of forming a raised contact for a substrate
JP3679786B2 (en) * 2002-06-25 2005-08-03 松下電器産業株式会社 Manufacturing method of semiconductor device
US6919642B2 (en) 2002-07-05 2005-07-19 Industrial Technology Research Institute Method for bonding IC chips to substrates incorporating dummy bumps and non-conductive adhesive and structures formed
GB2392307B8 (en) * 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
US7023347B2 (en) * 2002-08-02 2006-04-04 Symbol Technologies, Inc. Method and system for forming a die frame and for transferring dies therewith
JP3918681B2 (en) 2002-08-09 2007-05-23 カシオ計算機株式会社 Semiconductor device
JP2004080221A (en) * 2002-08-13 2004-03-11 Fujitsu Media Device Kk Elastic wave device and its manufacturing method
US6818818B2 (en) 2002-08-13 2004-11-16 Esmond T. Goei Concentrating solar energy receiver
US6903442B2 (en) * 2002-08-29 2005-06-07 Micron Technology, Inc. Semiconductor component having backside pin contacts
JP2004102331A (en) 2002-09-04 2004-04-02 Renesas Technology Corp Semiconductor device
JP2004119773A (en) * 2002-09-27 2004-04-15 Toshiba Corp Semiconductor device and its manufacturing method
US6986377B2 (en) * 2002-09-30 2006-01-17 Illinois Tool Works Inc. Method and apparatus for guiding and sealing split-flange zipper tape to bag making film
SG111972A1 (en) * 2002-10-17 2005-06-29 Agency Science Tech & Res Wafer-level package for micro-electro-mechanical systems
US6929974B2 (en) 2002-10-18 2005-08-16 Motorola, Inc. Feedthrough design and method for a hermetically sealed microdevice
JP3908146B2 (en) * 2002-10-28 2007-04-25 シャープ株式会社 Semiconductor device and stacked semiconductor device
GB0227009D0 (en) 2002-11-19 2002-12-24 Worlds Apart Ltd Convertible blanket
US7354798B2 (en) * 2002-12-20 2008-04-08 International Business Machines Corporation Three-dimensional device fabrication method
JP4342174B2 (en) 2002-12-27 2009-10-14 新光電気工業株式会社 Electronic device and manufacturing method thereof
JP3818651B2 (en) 2002-12-30 2006-09-06 デジコ総合管理株式会社 Solar power system
US7015590B2 (en) * 2003-01-10 2006-03-21 Samsung Electronics Co., Ltd. Reinforced solder bump structure and method for forming a reinforced solder bump
JP4145301B2 (en) 2003-01-15 2008-09-03 富士通株式会社 Semiconductor device and three-dimensional mounting semiconductor device
JP4337358B2 (en) 2003-02-17 2009-09-30 日立化成工業株式会社 Intermediate wiring member for stacking, wiring board, and manufacturing method thereof
US6889727B2 (en) * 2003-02-21 2005-05-10 Abbott Laboratories Apparatus and method for the preparation of experiments using proteins contained within gels
US6821878B2 (en) 2003-02-27 2004-11-23 Freescale Semiconductor, Inc. Area-array device assembly with pre-applied underfill layers on printed wiring board
JP4082242B2 (en) 2003-03-06 2008-04-30 ソニー株式会社 Element transfer method
JP4139713B2 (en) 2003-03-12 2008-08-27 シャープ株式会社 Reinforcing plate pasting device and pasting method
JP2004281793A (en) 2003-03-17 2004-10-07 Seiko Epson Corp Semiconductor device and its manufacturing method, circuit board, and electronic equipment
SE526366C3 (en) * 2003-03-21 2005-10-26 Silex Microsystems Ab Electrical connections in substrate
US7013509B2 (en) * 2003-03-28 2006-03-21 Hickman Robert J Easy on/easy off pillow and blanket cover
US6841883B1 (en) * 2003-03-31 2005-01-11 Micron Technology, Inc. Multi-dice chip scale semiconductor components and wafer level methods of fabrication
ITTO20030269A1 (en) 2003-04-08 2004-10-09 St Microelectronics Srl PROCEDURE FOR THE MANUFACTURE OF A DEVICE
JP4419049B2 (en) * 2003-04-21 2010-02-24 エルピーダメモリ株式会社 Memory module and memory system
US7115528B2 (en) 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
JP4056424B2 (en) 2003-05-16 2008-03-05 シャープ株式会社 Manufacturing method of semiconductor device
JP4104490B2 (en) * 2003-05-21 2008-06-18 オリンパス株式会社 Manufacturing method of semiconductor device
TWI229930B (en) 2003-06-09 2005-03-21 Advanced Semiconductor Eng Chip structure
US20050048766A1 (en) * 2003-08-31 2005-03-03 Wen-Chieh Wu Method for fabricating a conductive plug in integrated circuit
US20050046034A1 (en) * 2003-09-03 2005-03-03 Micron Technology, Inc. Apparatus and method for high density multi-chip structures
US6897125B2 (en) * 2003-09-17 2005-05-24 Intel Corporation Methods of forming backside connections on a wafer stack
TWI251313B (en) * 2003-09-26 2006-03-11 Seiko Epson Corp Intermediate chip module, semiconductor device, circuit board, and electronic device
JP4155154B2 (en) 2003-10-15 2008-09-24 セイコーエプソン株式会社 Semiconductor device, circuit board, and electronic device
US20050104027A1 (en) * 2003-10-17 2005-05-19 Lazarev Pavel I. Three-dimensional integrated circuit with integrated heat sinks
TWI478254B (en) 2003-11-10 2015-03-21 Chippac Inc Bump-on-lead flip chip interconnection
US6861336B1 (en) * 2003-11-30 2005-03-01 Union Semiconductor Technology Corporation Die thinning methods
US7276787B2 (en) * 2003-12-05 2007-10-02 International Business Machines Corporation Silicon chip carrier with conductive through-vias and method for fabricating same
US7230318B2 (en) 2003-12-24 2007-06-12 Agency For Science, Technology And Research RF and MMIC stackable micro-modules
US6992824B1 (en) * 2003-12-27 2006-01-31 Motamedi Manouchehr E Efficient wave propagation for terahertz imaging and sensing
KR100538158B1 (en) 2004-01-09 2005-12-22 삼성전자주식회사 Method for attaching stack chip of wafer level
JP4204989B2 (en) 2004-01-30 2009-01-07 新光電気工業株式会社 Semiconductor device and manufacturing method thereof
TWI254995B (en) 2004-01-30 2006-05-11 Phoenix Prec Technology Corp Presolder structure formed on semiconductor package substrate and method for fabricating the same
FR2867308B1 (en) 2004-03-02 2006-05-19 Atmel Grenoble Sa INTEGRATED CIRCUIT WITH READING DIODE OF VERY SMALL DIMENSIONS
JP4074862B2 (en) 2004-03-24 2008-04-16 ローム株式会社 Semiconductor device manufacturing method, semiconductor device, and semiconductor chip
JP3875240B2 (en) * 2004-03-31 2007-01-31 株式会社東芝 Manufacturing method of electronic parts
US7144759B1 (en) 2004-04-02 2006-12-05 Celerity Research Pte. Ltd. Technology partitioning for advanced flip-chip packaging
US20050245059A1 (en) 2004-04-30 2005-11-03 Yuan Yuan Method for making an interconnect pad
TWI230989B (en) 2004-05-05 2005-04-11 Megic Corp Chip bonding method
JP4119866B2 (en) 2004-05-12 2008-07-16 富士通株式会社 Semiconductor device
JP4955935B2 (en) * 2004-05-25 2012-06-20 キヤノン株式会社 Through-hole forming method and semiconductor device manufacturing method
JP4441328B2 (en) 2004-05-25 2010-03-31 株式会社ルネサステクノロジ Semiconductor device and manufacturing method thereof
US20050262634A1 (en) 2004-05-28 2005-12-01 Gottlieb Patricia R Combination convertible blanket and pillow
KR100668825B1 (en) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 Phase-change memory device and method for manufacturing the same
JP2006019455A (en) * 2004-06-30 2006-01-19 Nec Electronics Corp Semiconductor device and manufacturing method thereof
US7249992B2 (en) 2004-07-02 2007-07-31 Strasbaugh Method, apparatus and system for use in processing wafers
DE602005011017D1 (en) 2004-07-07 2008-12-24 Promerus Llc LENS-SENSITIVE DIELECTRIC RESIN COMPOSITIONS AND ITS USES
JP4130668B2 (en) 2004-08-05 2008-08-06 富士通株式会社 Substrate processing method
US7109068B2 (en) * 2004-08-31 2006-09-19 Micron Technology, Inc. Through-substrate interconnect fabrication methods
US7129567B2 (en) 2004-08-31 2006-10-31 Micron Technology, Inc. Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements
US7157310B2 (en) * 2004-09-01 2007-01-02 Micron Technology, Inc. Methods for packaging microfeature devices and microfeature devices formed by such methods
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7326629B2 (en) * 2004-09-10 2008-02-05 Agency For Science, Technology And Research Method of stacking thin substrates by transfer bonding
JP4966487B2 (en) 2004-09-29 2012-07-04 オンセミコンダクター・トレーディング・リミテッド Semiconductor device and manufacturing method thereof
JP4813035B2 (en) * 2004-10-01 2011-11-09 新光電気工業株式会社 Manufacturing method of substrate with through electrode
US9466595B2 (en) * 2004-10-04 2016-10-11 Intel Corporation Fabrication of stacked die and structures formed thereby
JP2006135277A (en) 2004-10-06 2006-05-25 North:Kk Wiring board and its manufacturing method
US20060070704A1 (en) * 2004-10-06 2006-04-06 Tropicana Products, Inc. Vaccum support and transfer of flexible material
KR100498708B1 (en) 2004-11-08 2005-07-01 옵토팩 주식회사 Electronic package for semiconductor device and packaging method thereof
US20060125084A1 (en) * 2004-12-15 2006-06-15 Fazzio Ronald S Integration of micro-electro mechanical systems and active circuitry
US7396732B2 (en) 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US7264984B2 (en) 2004-12-21 2007-09-04 Touchdown Technologies, Inc. Process for forming MEMS
US7390735B2 (en) 2005-01-07 2008-06-24 Teledyne Licensing, Llc High temperature, stable SiC device interconnects and packages having low thermal resistance
JP4057017B2 (en) 2005-01-31 2008-03-05 富士通株式会社 Electronic device and manufacturing method thereof
US7442570B2 (en) 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US7371676B2 (en) 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US20060252262A1 (en) 2005-05-03 2006-11-09 Rockwell Scientific Licensing, Llc Semiconductor structures having via structures between planar frontside and backside surfaces and methods of fabricating the same
TW200644165A (en) 2005-05-04 2006-12-16 Icemos Technology Corp Silicon wafer having through-wafer vias
US7303976B2 (en) 2005-05-10 2007-12-04 Hewlett-Packard Development Company, L.P. Wafer bonding method
US7170183B1 (en) 2005-05-13 2007-01-30 Amkor Technology, Inc. Wafer level stacked package
CN101589543B (en) 2005-05-18 2012-10-31 科隆科技公司 Micro-electro-mechanical transducers
US20060264029A1 (en) 2005-05-23 2006-11-23 Intel Corporation Low inductance via structures
EP1732116B1 (en) 2005-06-08 2017-02-01 Imec Methods for bonding and micro-electronic devices produced according to such methods
US20060278979A1 (en) * 2005-06-09 2006-12-14 Intel Corporation Die stacking recessed pad wafer design
US20060281303A1 (en) 2005-06-14 2006-12-14 John Trezza Tack & fuse chip bonding
US7838997B2 (en) 2005-06-14 2010-11-23 John Trezza Remote chip attachment
US7786592B2 (en) 2005-06-14 2010-08-31 John Trezza Chip capacitive coupling
US7767493B2 (en) 2005-06-14 2010-08-03 John Trezza Post & penetration interconnection
US7687400B2 (en) 2005-06-14 2010-03-30 John Trezza Side stacking apparatus and method
US7534722B2 (en) * 2005-06-14 2009-05-19 John Trezza Back-to-front via process
US7157372B1 (en) 2005-06-14 2007-01-02 Cubic Wafer Inc. Coaxial through chip connection
US7488680B2 (en) * 2005-08-30 2009-02-10 International Business Machines Corporation Conductive through via process for electronic device carriers
US7528494B2 (en) 2005-11-03 2009-05-05 International Business Machines Corporation Accessible chip stack and process of manufacturing thereof
TWI310366B (en) 2005-11-25 2009-06-01 Panasonic Elec Works Co Ltd Wafer-level package structure, and sensor device obtained from the same
US20080017407A1 (en) * 2006-07-24 2008-01-24 Ibiden Co., Ltd. Interposer and electronic device using the same
JP5010222B2 (en) * 2006-09-21 2012-08-29 株式会社東芝 Nonvolatile semiconductor memory device
US7982307B2 (en) * 2006-11-22 2011-07-19 Agere Systems Inc. Integrated circuit chip assembly having array of thermally conductive features arranged in aperture of circuit substrate
JP2008234475A (en) * 2007-03-22 2008-10-02 Toshiba Corp Information processor
US20080284037A1 (en) 2007-05-15 2008-11-20 Andry Paul S Apparatus and Methods for Constructing Semiconductor Chip Packages with Silicon Space Transformer Carriers
US8242604B2 (en) * 2009-10-28 2012-08-14 International Business Machines Corporation Coaxial through-silicon via

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0757386A2 (en) * 1995-08-02 1997-02-05 International Business Machines Corporation Systems interconnected by bumps of joining material
US20020027441A1 (en) * 1996-04-01 2002-03-07 Salman Akram Semiconductor test interconnect with variable flexure contacts
US20030080408A1 (en) * 1997-12-18 2003-05-01 Farnworth Warren M. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
US20030206680A1 (en) * 2002-05-03 2003-11-06 Georgia Tech Research Corporation Devices having compliant wafer-level input/output interconnections and packages using pillars and methods of fabrication thereof
US20040124523A1 (en) * 2002-06-18 2004-07-01 Poo Chia Yong Semiconductor devices including peripherally located bond pads, intermediates thereof, assemblies, and packages including the semiconductor devices, and support elements for the semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8846445B2 (en) 2005-06-14 2014-09-30 Cufer Asset Ltd. L.L.C. Inverse chip connector
US9147635B2 (en) 2005-06-14 2015-09-29 Cufer Asset Ltd. L.L.C. Contact-based encapsulation
US9324629B2 (en) 2005-06-14 2016-04-26 Cufer Asset Ltd. L.L.C. Tooling for coupling multiple electronic chips

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